JPH05232417A - Light modulator - Google Patents

Light modulator

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Publication number
JPH05232417A
JPH05232417A JP3679092A JP3679092A JPH05232417A JP H05232417 A JPH05232417 A JP H05232417A JP 3679092 A JP3679092 A JP 3679092A JP 3679092 A JP3679092 A JP 3679092A JP H05232417 A JPH05232417 A JP H05232417A
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Japan
Prior art keywords
substrate
1a
1b
formed
parallel
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Granted
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JP3679092A
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Japanese (ja)
Inventor
久志 ▲高▼松
Hirotoshi Furukawa
Hisashi Takamatsu
Junko Watanabe
裕稔 古川
順子 渡邉
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Fujitsu Ltd
富士通株式会社
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Priority to JP3679092A priority Critical patent/JPH05232417A/en
Publication of JPH05232417A publication Critical patent/JPH05232417A/en
Application status is Granted legal-status Critical

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
    • G02F1/0356Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure controlled by a high-frequency electromagnetic wave component in an electric waveguide structure

Abstract

PURPOSE:To shorten a substrate length and reduce a size, and to obtain the easiness of handling by providing plural couples of parallel optical waveguides of a Mach-Zehnder modulator by folding them back on a substrate end surface. CONSTITUTION:A short linear input-side waveguide 11 is provided at the top surface part of the substrate 1 from one substrate end surface 1A to the other substrate end surface 1B. Its end part is branched in a V shape and turned over on the substrate end surface to form a couple of parallel optical waveguides 12-1A and 12-2A to desired overall length while a direction wherein electrooptic effect is larger is selected, so the substrate length is shortened to about 1/3. A couple of V-shaped projection parts 13-1 and 13-2 are coupled with the ends of the parallel waveguides 12-1A and 12-2A and provided having an angle alpha of incidence larger than the total reflection angle so that the vertex is aligned with the other substrate end surface. Mean waveguides 12-1B and 12-2B having desired length are coupled with the return-path end parts of the projection parts 13-1 and 13-2. An earth electrode 16-2 is formed along other parallel optical waveguides 12-1B and 12-2B coupled through the other projection part 13-2, and a microwave power source 20 is connected to the end part of one of a signal electrode 16-1 and an earth electrode 16-2.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は、光変調器に係わり、特にマッハツェンダ型変調器に関する。 The present invention relates to relates to a light modulator, more particularly, the MZ modulator.

【0002】 [0002]

【従来の技術】図3は従来のマッハツェンダ型変調器の図であって、(A) は平面図,(B)は断面図である。 BACKGROUND ART FIG. 3 is a diagram of a conventional MZ modulator, (A) is a plan view, (B) is a cross-sectional view.

【0003】図3において1は、電気光学結晶よりなる基板である。 [0003] In FIG 3 1 is a substrate made of electro-optical crystal. 基板1の表面にTiを所望に拡散して、一方の基板端面側に直線状に入力側光導波路2を設け、入力側光導波路2を近接して(間隔Bは約10μm ) 平行配置した一対の平行光導波路3-1,3-2 に分岐し、この一対の平行光導波路3-1 ,3-2の他方の端末を集合して直線状の出力側光導波路4としている。 The Ti on the surface of the substrate 1 by diffusing the desired, linearly in one substrate end face is provided on the input side optical waveguide 2, in close proximity to the input side optical waveguide 2 (spacing B is approximately 10 [mu] m) were arranged in parallel pairs branches into parallel optical waveguides 3-1 and 3-2, and a linear output optical waveguide 4 this pair of parallel optical waveguides 3-1 to set the other terminal 3-2.

【0004】そして、基板1の表面にSiO 2膜等のバッファ層6を形成し、バッファ層6の表面の一方の平行光導波路3-1 の直上に、金等を蒸着して帯状の信号電極5-1 [0004] Then, the buffer layer 6 such as a SiO 2 film is formed on the surface of the substrate 1, directly above the one of the parallel optical waveguides 3-1 of the surface of the buffer layer 6, a strip-shaped signal electrode by depositing gold or the like 5-1
を、他方の平行光導波路3-2 の直上に金等を蒸着して、 And by depositing gold or the like directly on the other parallel optical waveguides 3-2,
帯状のアース電極5-2 をそれぞれ形成している。 Strip-shaped ground electrode 5-2 is formed respectively.

【0005】この信号電極及びアース電極の長さLは、 [0005] The length L of the signal electrode and the ground electrode,
等しくて20mm〜40mmである。 Equally is 20mm~40mm. なお、基板1の材料は電気光学効果の大きいニオブ酸リチウム(LiNbO 3 )等を使用するものであるが、電気光学効果に方向性がある。 Although the material substrate 1 is to use such a large lithium niobate electrooptic effect (LiNbO 3), there is directionality in the electro-optical effect. したがって、平行光導波路は、電気光学効果が大きい方向を選択して形成している。 Thus, the parallel optical waveguides are formed by selecting a direction electrooptic effect is large.

【0006】光変調器は上述のように構成されているので、入力側光導波路2から光信号を伝送させている。 [0006] Since the optical modulator is constructed as described above, thereby transmitting an optical signal from the input optical wave guide 2. そして、信号電極5-1 とアース電極5-2 間に電圧を印加しない状態で、出力側光導波路4の出力がオンとなる。 In a state where no voltage is applied between the signal electrodes 5-1 and the ground electrode 5-2, the output of the output-side optical waveguide 4 is turned on.

【0007】また、信号電極5-1 とアース電極5-2 間に所定の電圧が印加されると、平行光導波路の電気光学効果で屈折率が変化し、平行光導波路3-1,3-2 を伝搬する光信号の位相が波長/2だけずれるので、出力側光導波路4の出力がオフとなる。 Further, when a predetermined voltage between the signal electrode 5-1 and the ground electrode 5-2 is applied, the refractive index changes in the electro-optic effect of the parallel light waveguides, parallel light waveguides 3-1,3- since the phase of the optical signal propagating 2 is shifted by wavelength / 2, the output of the output-side optical waveguide 4 is turned off. 即ち光変調器として機能する。 That serves as a light modulator.

【0008】 [0008]

【発明が解決しようとする課題】マッハツェンダ型変調器の光出力のオン・オフを行う位相差δは、次式の関係がある。 [0007] retardation for optical output of the on-off of the MZ modulator δ are related by the following equation.

【0009】δ=aLV a・・・基板の材料等により決定される定数 L・・・平行光導波路(電極長)の長さ V・・・印加する電圧 ところで、光変調器に印加する電圧は、例えば3V〜5 [0009] [delta] = ALV a voltage applied length V ... of ... constant determined by the material of the substrate L ... parallel optical waveguides (electrode length) Incidentally, the voltage applied to the optical modulator , for example 3V~5
Vの低電圧のことが望ましい。 It is desirable for low voltage V.

【0010】したがって光変調器を低電圧で作動させるためには、平行光導波路の長さを所定に長くすることが要求され、これに伴い基板長が大きく(約50mm) となる。 Accordingly the optical modulator to operate at a low voltage is required to increase the predetermined length of the parallel optical waveguides, the substrate length Along with this is the large (approximately 50 mm). 即ち、光変調器が長く大形となるばかりでなく、基板が細長いために取扱に留意しないと、損傷するという問題点があった。 That is, not only the optical modulator becomes large long and substrate is not noted handling for elongated, disadvantageously damaged.

【0011】本発明はこのような点に鑑みて創作されたもので、小形で、取扱いが容易な光変調器を提供することを目的としている。 [0011] The present invention has been made in view of the above problems, in small, aims at handling provide easy optical modulator.

【0012】 [0012]

【課題を解決するための手段】上記の目的を達成するために本発明は、図1に図示したように、一方の基板端面 Means for Solving the Problems The present invention to achieve the above object, as shown in FIG. 1, one end face of the substrate
1Aから他の基板端面1Bに向かって、基板1の表面部分に形成した入力側光導波路11と、入力側光導波路11が分岐してなる一対の平行光導波路12-1A,12-2A と、頂点が他方の基板端面1Bに一致するよう、それぞれの平行光導波路12-1A,12-2Aの端部に形成した一対のVの字形の出射部13-1,13-2 と、平行光導波路12-1A,12-2A に平行するよう、それぞれの出射部13-1,13-2 の復路の端部に接続形成した、他の一対の平行光導波路12-1B,12-2B と、後段の一対の平行光導波路12-1B,12-2B が集合してなる出力側光導波路15とを備えている。 Toward the 1A to another substrate end face 1B, and the input side optical waveguide 11 formed on the surface portion of the substrate 1, the input side optical waveguide 11 is branched pair of parallel optical waveguides 12-1A comprising a 12-2A, as the vertex coincides with the other substrate edge 1B, each of the parallel optical waveguides 12-1A, and the exit portion 13-1 and 13-2 of the pair of V-shaped formed at an end portion of the 12-2A, parallel light waveguides 12-1A, as parallel to 12-2A, and connected form the homeward end of each emitting part 13-1 and 13-2, the other pair of parallel optical waveguides 12-1B, and 12-2B, subsequent pair of parallel optical waveguides 12-1B of, 12-2B is an output-side optical waveguide 15 formed by the set.

【0013】そして、一方の出射部13-1を介して連結した一方の平行光導波路12-1A,12-1Bに添って、基板1の表面に信号電極16-1を形成し、他方の出射部13-2を介して連結した他方の平行光導波路12-1B,12-2B に添って、 [0013] Then, one of the exit section of 13-1 while connected through the parallel optical waveguides 12-1A, along the 12-1B, to form the signal electrode 16-1 on the surface of the substrate 1, the other exit the other parallel optical waveguides 12-1B linked via the parts 13-2, along the 12-2B,
基板1の表面にアース電極16-2を形成した構成とする。 On the surface of the substrate 1 a structure forming the ground electrode 16-2.

【0014】或いは図2に例示したように、入力側光導波路11が分岐してなる一対の平行光導波路の端部に形成するVの字形の出射部を、入力側光導波路11とは反対側の基板端面1B側と、入力側光導波路側の基板端面1A側とに交互に形成することで、基板1に3対以上の平行光導波路12-1A,12-2A,12-1B,12-2B,12-1C,12-2C を形成し、 [0014] Alternatively, as illustrated in FIG. 2, the exit portion of the V-shaped where the input optical wave guide 11 formed on the end portion of the pair of parallel optical waveguides formed by branches, opposite to the input optical wave guide 11 a substrate end face 1B side, by forming alternately the substrate end face 1A side of the input optical wave guide side, the substrate 1 in 3 or more pairs of parallel optical waveguides 12-1A, 12-2A, 12-1B, 12- forming 2B, 12-1c, and 12-2c,
最終段の一対の平行光導波路を集合して出力側光導波路 Output optical waveguide collectively a pair of parallel optical waveguides in the final stage
15を設ける。 Providing a 15.

【0015】そして、一方の出射部13-1A,13-1B を介して連結した、一方の平行光導波路12-1A,12-1B,12-1C に添って信号電極16-1を形成し、他方の出射部13-2A,13-2 [0015] Then, one of the exit section 13-1A, linked via a 13-1B, one parallel optical waveguides 12-1A, form 12-1B, the signal electrodes 16-1 along the 12-1c, the other exit portion 13-2A, 13-2
B を介して連結した、他方の平行光導波路12-2A,12-2B, Are linked through an B, the other parallel optical waveguides 12-2A, 12-2B,
12-2C に添ってアース電極16-2を形成した構成とする。 A structure forming the ground electrode 16-2 along the 12-2c.

【0016】或いはまた、図1に例示したように、平行光導波路の端部に形成したVの字形の出射部13-1,13-2 [0016] Alternatively, as illustrated in FIG. 1, the exit portion of the V-shaped formed at an end portion of the parallel optical waveguides 13-1 and 13-2
の基板端面に対する入射角αを、全反射角以上としたものとする。 The angle of incidence α with respect to the substrate end faces of, and that the total reflection angle or more.

【0017】さらにまた、図2に例示したように、平行光導波路の端部に形成したVの字形の出射部13-1A 及び出射部13-2A のそれぞれの頂点に対応する基板端面1B [0017] Furthermore, as illustrated in FIG. 2, the substrate end face 1B which correspond to each vertex of the exit portion 13-1A and the exit section 13-2A ​​of V-shaped formed at an end portion of the parallel optical waveguides
に、全反射膜31を形成し、他の平行光導波路の端部に形成したVの字形の出射部13-1B及び出射部13-2B のそれぞれの頂点に対応する基板端面1Aに、全反射膜32を形成した構成とする。 To form a total reflection film 31, the substrate end face 1A corresponding to each vertex of the exit portion 13-1B and the exit portion 13-2B of shaped V formed at the end of the other of the parallel light waveguides, the total reflection a structure forming a film 32.

【0018】 [0018]

【作用】本発明は、入力側光導波路から分岐した平行光導波路を、基板の端面で反転させて複数対の平行光導波路を設け、それらの平行光導波路長の和を所定の長さにすることで、マッハツェンダ型変調器を構成させている。 DETAILED DESCRIPTION OF THE INVENTION The present invention, parallel light waveguides branched from the input side optical waveguide is reversed in the end face of the substrate provided with the parallel light waveguides pairs, the sum of the parallel light waveguide length to a predetermined length it is, thereby constituting a Mach-Zehnder modulator.

【0019】したがって、従来の単に一対の平行光導波路からなる光変調器に較べて、基板長さを短くすることが可能となる。 [0019] Therefore, compared with the conventional mere optical modulator comprising a pair of parallel optical waveguides, it is possible to shorten the substrate length. 例えば平行光導波路を2対とすると、従来のものの約半分の長さとなる。 For example, the two pairs of parallel optical waveguides, a length of about half of the conventional ones.

【0020】一方、一対の平行光導波路の間隔は約10 Meanwhile, the distance between the pair of parallel optical waveguides about 10
μm であるので、複数対の平行光導波路を設けてても、 Since in [mu] m, even if provided with parallel optical waveguide pairs,
光変調器の幅はさほど大きくはならない。 Width of the optical modulator is not so large. 即ち、幅は殆ど変わらず長さだけが短くなり幅方向が小さい矩形となるので、光変調器の取扱いが容易となる。 That is, the width is only little unchanged length is rectangular makes the width direction is small short, which facilitates handling of the optical modulator.

【0021】また、出射部の入射角を全反射角以上とする、或いは出射部の頂点部分の基板端面に全反射膜を設けることで、光損失が減少する。 Further, the incident angle of the exit portion is greater than or equal to a total reflection angle, or the substrate end face of the top portion of the emitting portion by providing the total reflection film, light loss is reduced.

【0022】 [0022]

【実施例】以下図を参照しながら、本発明を具体的に説明する。 EXAMPLES With reference to the following drawings, detailed explanation of the present invention. なお、全図を通じて同一符号は同一対象物を示す。 Note that the same reference numerals throughout the figures denote the same object.

【0023】図1は本発明の実施例の図、図2は本発明の他の実施例の図である。 FIG. 1 is a diagram, Figure 2 embodiment of the present invention is a diagram of another embodiment of the present invention. 図1において、電気光学結晶(例えばニオブ酸リチウム)よりなる基板1の、一方の基板端面1Aから他の基板端面1Bに向かって、基板1の表面部分に短い直線状の入力側光導波路11を設け、入力側光導波路11の端部をVの字形に分岐し、所望の長さ(約10mm) の一対の平行光導波路12-1A,12-2A (間隔は約 In Figure 1, an electro-optic crystal (such as lithium niobate) substrate 1 made of, toward from one substrate end face 1A on another substrate end face 1B, the input optical wave guide 11 for a short straight line in the surface portion of the substrate 1 provided, branching the end of the input optical wave guide 11 to the shape and V, a pair of parallel optical waveguides 12-1A desired length (about 10 mm), 12-2A (spacing about
10μm ) を設けている。 Is provided with a 10μm). この平行光導波路12-1A,12-2A The parallel optical waveguides 12-1A, 12-2A
は、電気光学効果が大きい方向を選択して形成している。 Is formed by selecting a direction electrooptic effect is large.

【0024】そして、それぞれの平行光導波路12-1A,12 [0024] Then, each of the parallel optical waveguides 12-1A, 12
-2A の端部に連結して、頂点が他方の基板端面1Bに一致するように、一対のVの字形の出射部13-1,13-2 を設けている。 And connected to the end of -2A, so the vertex coincides with the other substrate edge 1B, it is provided with exit section 13-1 and 13-2 of the shape of a pair of V. なお出射部13-1,13-2 の基板端面1B対する入射角αを、全反射角(約45度)以上としている。 Note the incident angle α against the substrate end face 1B of the emission part 13-1 and 13-2, and a total reflection angle (about 45 degrees) or more.

【0025】また、平行光導波路12-1A,12-2A に平行するように、それぞれの出射部13-1,13-2 の復路の端部に始点が連結した、所望の長さ(約10mm) の一対の平行光導波路12-1B,12-2B を設けている。 Further, the parallel optical waveguides 12-1A, to be parallel to the 12-2A, starting point was ligated to return the end of each emitting part 13-1 and 13-2, the desired length (about 10mm pair of parallel optical waveguides 12-1B of), are provided 12-2B.

【0026】そして、後段の一対の平行光導波路12-1B, [0026] Then, the subsequent pair of parallel optical waveguides 12-1B,
12-2B を、Vの字形に集合して1条の直線状の出力側光導波路15とし、基板端面1Aまで延伸させている。 The 12-2B, collectively the V-shaped as one strip linear output side optical waveguide 15, and is extended to the substrate end face 1A. なお、 It should be noted that,
上述の総ての光導波路は、基板1の表面にTiを所望に拡散して設けたものである。 All optical waveguide described above are those which are provided by diffusing Ti into the desired on the surface of the substrate 1.

【0027】この基板1の表面にSiO 2膜等のバッファ層を形成している。 [0027] forming a buffer layer such as SiO 2 film on the surface of the substrate 1. 一方の出射部13-1を介して連結した一方の平行光導波路12-1A,12-1B に添って、バッファ層の表面に金等を蒸着して信号電極16-1を形成している。 One of the exit section while linked 13-1 through parallel optical waveguides 12-1A, along the 12-1B, to form the signal electrodes 16-1 and depositing gold or the like on the surface of the buffer layer.

【0028】また、他方の出射部13-2を介して連結した他方の平行光導波路12-1B,12-2B に添って、バッファ層の表面に金等を蒸着してアース電極16-2を形成している。 Further, other parallel optical waveguide 12-1B linked via the other exit portion 13-2, along the 12-2B, the ground electrode 16-2 by depositing gold or the like on the surface of the buffer layer It is formed. そして、信号電極16-1とアース電極16-2の一方の端部に、マイクロ波電源20を接続している。 Then, the one end of the signal electrode 16-1 and ground electrodes 16-2 connects the microwave source 20.

【0029】なお、信号電極16-1とアース電極16-2との他方の端部を所望の抵抗値の抵抗21を介して接続することで、印加するマイクロ波のインピーダンスをマッチングさせている。 [0029] Incidentally, by connecting the other end of the signal electrode 16-1 and ground electrodes 16-2 through a resistor 21 having a desired resistance value, thereby matching the impedance of the microwave applied.

【0030】本発明の光変調器は上述のように構成されているので、入力側光導波路11から光信号を伝送するとともに、信号電極16-1とアース電極16-2との間に、マイクロ波電源20から電界を印加して、信号電極16-1にマイクロ波を通している。 [0030] Since the optical modulator of the present invention is constructed as described above, together with transmitting the optical signal from the input side optical waveguide 11, between the signal electrodes 16-1 and the ground electrodes 16-2, micro by applying an electric field from the wave source 20, it is passed through a microwave signal electrode 16-1.

【0031】本発明の実施例は、このように電極にマイクロ波を通して、光信号と変調電気信号の速度を等しくし、所謂進行波形変調器とすることで、光変調器の変調帯域を拡開(2GH Z 〜10GH Z ) している。 Example of The invention, through microwave Thus the electrodes, the speed of the optical signal and the modulated electrical signal equal, by a so-called traveling wave modulator, spreading the modulation bandwidth of the optical modulator are (2GH Z ~10GH Z).

【0032】したがって、従来の単に一対の平行光導波路からなる光変調器に較べて、基板長さが約半分となる。 [0032] Therefore, compared with the conventional mere optical modulator comprising a pair of parallel optical waveguides, the substrate length is about half. 図2は、平行光導波路を3対設けた実施例である。 Figure 2 is an embodiment example in which three pairs of parallel light waveguides.

【0033】図2において、基板1の一方の基板端面1A [0033] In FIG. 2, one of the substrate end face 1A of the substrate 1
から他の基板端面1Bに向かって、基板1の表面部分に短い直線状の入力側光導波路11を設け、入力側光導波路11 Towards the other end surface of the substrate 1B from the linear input-side optical waveguide 11 short surface portion of the substrate 1 is provided, the input side optical waveguide 11
の端部をVの字形に分岐して、所望の長さの一対の平行光導波路12-1A,12-2A (間隔は約10μm ) を設けている。 The end branches into shape and V, the desired length of the pair of parallel optical waveguides 12-1A, 12-2A (spacing approximately 10 [mu] m) are provided. この平行光導波路12-1A,12-2A は、電気光学効果が大きい方向を選択して形成している。 The parallel optical waveguides 12-1A, 12-2A are formed by selecting a direction electrooptic effect is large.

【0034】そして、それぞれの平行光導波路12-1A,12 [0034] Then, each of the parallel optical waveguides 12-1A, 12
-2A の端部に連結して、頂点が他方の基板端面1Bに一致するように、一対のVの字形の出射部13-1A,13-2A を設けている。 And connected to the end of -2A, so the vertex coincides with the other substrate edge 1B, and exit section 13-1A-shaped pair of V, and 13-2A ​​provided. そして、平行光導波路12-1A,12-2A に平行するように、それぞれの出射部13-1A,13-2A の復路の端部に始点が連結した、所望の長さの一対の平行光導波路12 Then, the parallel light waveguides 12-1A, to be parallel to the 12-2A, each emission unit 13-1A, start point is linked to the return of the end portion of the 13-2A, the desired pair of parallel optical waveguides of length 12
-1B,12-2B を設け、それぞれの平行光導波路12-1B,12-2 -1B, the provided 12-2B, respectively parallel optical waveguides 12-1B, 12-2
B の端部に連結して、頂点が入力側光導波路11側の基板端面1Aに一致するように、一対のVの字形の出射部13-1 And connected to the end of the B, so the vertex coincides with the substrate end face 1A of the input optical wave guide 11 side, the exit portion 13-1 shape of a pair of V
B,13-2B を設けている。 B, is provided with a 13-2B.

【0035】さらに、それぞれの出射部13-1B,13-2B の復路の端部に始点が連結した、所望の長さの一対の平行光導波路12-1C,12-2C を設けている。 Furthermore, each of the emitting portion 13-1B, starting point backward end of 13-2B are linked, and the desired length of the pair of parallel optical waveguides 12-1c, the 12-2C provided. そして、その一対の平行光導波路12-1C,12-2C を、Vの字形に集合して1 Then, the pair of parallel optical waveguides 12-1c, the 12-2c, collectively the V-shaped 1
条の直線状の出力側光導波路15とし、基板端面1Bまで延伸させている。 A linear output side optical waveguide 15 of the strip, which is extended to the end face of the substrate 1B.

【0036】この基板1の表面にSiO 2膜等のバッファ層を形成し、一方の平行光導波路12-1A ー出射部13-1A ー平行光導波路12-1B ー出射部13-1B ー平行光導波路12-1 [0036] surface of the substrate 1 to form a buffer layer such as SiO 2 film, one of the parallel optical waveguides 12-1A over exit portions 13-1A over the parallel optical waveguides 12-1B over exit section 13-1B over collimated light guide waveguide 12-1
C よりなる一連の光導波路の、平行光導波路12-1A,12-1 A series of optical waveguides consisting of C, the parallel optical waveguides 12-1A, 12-1
B,12-1C に添って、バッファ層の表面に金等を蒸着して信号電極16-1を形成している。 B, and along the 12-1c, to form the signal electrodes 16-1 and depositing gold or the like on the surface of the buffer layer.

【0037】また、他方の平行光導波路12-2A ー出射部 Further, other parallel optical waveguides 12-2A over exit section
13-2A ー平行光導波路12-2B ー出射部13-2B ー平行光導波路12-2C よりなる一連の光導波路の、平行光導波路12 Of 13-2A ​​over the parallel optical waveguides 12-2B over exit section 13-2B over the parallel optical waveguides 12-2C series of optical waveguide made of parallel optical waveguides 12
-2A,12-2B,12-2C に添って、バッファ層の表面に金等を蒸着してアース電極16-2を形成している。 -2A, 12-2B, along the 12-2c, to form a ground electrode 16-2 by depositing gold or the like on the surface of the buffer layer.

【0038】そして、信号電極16-1とアース電極16-2の一方の端部に、マイクロ波電源20を接続している。 [0038] Then, at one end of the signal electrode 16-1 and ground electrodes 16-2 connects the microwave source 20. 一方、平行光導波路の端部に形成したVの字形の出射部13 On the other hand, the emission portion of the shape of the V formed at the end of the parallel optical waveguides 13
-1A 及び出射部13-2A のそれぞれの頂点に対応する基板端面1Bに、全反射膜31を形成し、他の平行光導波路の端部に形成したVの字形の出射部13-1B 及び出射部13-2B The substrate end face 1B which correspond to each vertex of -1A and emitting unit 13-2A, to form a total reflection film 31, the shape of the V formed at the end of the other of the parallel light waveguides emitting unit 13-1B and the exit part 13-2B
のそれぞれの頂点に対応する基板端面1Aに、全反射膜32 Of the substrate end face 1A corresponding to each vertex, the total reflection film 32
を形成している。 To form a.

【0039】したがって、図2に例示した光変調器は、 [0039] Thus, the optical modulator illustrated in Figure 2,
従来の単に一対の平行光導波路からなる光変調器に較べて、基板長さが約1/3となる。 Compared to conventional simple optical modulator comprising a pair of parallel optical waveguides, the substrate length is about 1/3. 一方、一対の平行光導波路の間隔は約10μm であるので、3対の平行光導波路を設けても、光変調器の幅はさほど大きくはならなくて、基板の形状は幅方向が小さい矩形となる。 On the other hand, since the distance between the pair of parallel optical waveguides is about 10 [mu] m, be provided with a parallel light waveguides three pairs, the width of the optical modulator is not become very large, the shape of the substrate and the rectangular width direction is small Become.

【0040】 [0040]

【発明の効果】以上説明したように本発明は、マッハツェンダ型変調器の平行光導波路を、基板端面で折り返して複数対設けたことにより、基板の長さが小さくなって、光変調器の小形化が推進される。 The present invention described above, according to the present invention, the parallel optical waveguides of the Mach-Zehnder modulator, by providing a plurality of pairs are turned back at the substrate end face, it is reduced the length of the substrate, the optical modulator Small reduction is promoted.

【0041】また、基板が小形の矩形になるので、取扱いが容易で、且つ基板が損傷し難くなる。 Further, since the substrate is rectangular small, handling is easy, and the substrate is hardly damaged. 一方、Vの字形の出射部の入射角を全反射角以上にする、或いはVの字形の出射部の頂点に対応する基板端面に全反射膜を設けることで、光損失が減少するという効果を有する。 On the other hand, the incident angle of the exit portion of the V-shaped to more total reflection angle, or by providing the total reflection film on the substrate end face of the vertex of the exit portion of the V-shaped, the effect of light loss is reduced a.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】 本発明の実施例の図 FIG embodiment of the invention, FIG

【図2】 本発明の他の実施例の図 Figure of another embodiment of the present invention; FIG

【図3】 従来例の図で (A) は平面図 (B) は断面図 [3] In view of the prior art (A) is a plan view (B) is a sectional view

【符号の説明】 DESCRIPTION OF SYMBOLS

1 基板 1A,1B 基板端面 2,11 入力側光導波路 4,15 出力側光導波路 3-1,3-2,12-1A,12-2A,12-1B,12-2B,12-1C,12-2C 平行光導波路 5-1,16-1 信号電極 5-2,16-2 アース電極 13-1,13-2,13-1A,13-2A,13-1B,13-2B 出射部 20 マイクロ波電源 31,32 全反射膜 1 substrate 1A, 1B substrate end face 2,11 input optical wave guide 4, 15 the output side optical waveguide 3-1,3-2,12-1A, 12-2A, 12-1B, 12-2B, 12-1C, 12 -2C parallel light waveguides 5-1,16-1 signal electrodes 5-2,16-2 ground electrode 13-1,13-2,13-1A, 13-2A, 13-1B, 13-2B emitting unit 20 micro wave power 31,32 total reflection film

Claims (4)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 一方の基板端面(1A)から他の基板端面(1 1. A one other substrate end face from the substrate end face (1A) of (1
    B)に向かって、基板(1) の表面部分に形成した入力側光導波路(11)と、 該入力側光導波路(11)が分岐してなる一対の平行光導波路(12-1A,12-2A) と、 頂点が他方の基板端面(1B)に一致するよう、それぞれの該平行光導波路(12-1A,12-2A) の端部に形成した一対のVの字形の出射部(13-1,13-2) と、 該平行光導波路(12-1A,12-2A) に平行するよう、それぞれの該出射部(13-1,13-2) の復路の端部に接続形成した、他の一対の平行光導波路(12-1B,12-2B) と、 後段の該一対の平行光導波路(12-1B,12-2B) が集合してなる出力側光導波路(15)と、 一方の該出射部(13-1)を介して連結した一方の該平行光導波路(12-1A,12-1B)に添って、該基板(1) の表面に形成した信号電極(16-1)と、 他方の該出射部(13-2)を介して連結した他方の該平行光導波路(12-1B,12-2B)に添って、該基板(1) の表面に形成したアース Towards B), the substrate (1) between the input side optical waveguide formed on the surface portion (11), a pair of parallel optical waveguides in which the input optical wave guide (11) is branched (12-1A, 12- and 2A), so that the vertex coincides with the other substrate edge (1B), each of the flat Yukimitsu waveguide (12-1A, exit section of the shape of a pair of V formed at the end of the 12-2A) (13- and 1,13-2), flat Yukimitsu waveguide (12-1A, 12-2A) so as to parallel to, and connected form the homeward end of each of the emitting portions (13-1, 13-2), other pair of parallel optical waveguides (12-1B, 12-2B) and a subsequent stage of said pair of parallel optical waveguides (12-1B, 12-2B) is formed by a set output side optical waveguide (15), whereas of the exit portion of one linked via a (13-1) flat Yukimitsu waveguide (12-1A, 12-1B) along the signal electrode (16-1) formed on the surface of the substrate (1) When the other flat Yukimitsu waveguide (12-1B, 12-2B) linked via the other of said emitting portion (13-2) along the, it was formed on the surface of the substrate (1) ground 極(16-2)とを、備えたこと特徴とする光変調器。 Pole (16-2) and the light modulator, characterized by comprising.
  2. 【請求項2】 入力側光導波路(11)が分岐してなる一対の平行光導波路の端部に形成する一対のVの字形の出射部を、入力側光導波路(11)とは反対側の基板端面(1B)側と、該入力側光導波路(11)側の基板端面(1A)側とに交互に形成することで、基板(1) に3対以上の平行光導波路(12-1A,12-2A,12-1B,12-2B,12-1C,12-2C ・・・・・)が形成され、 最終段の一対の平行光導波路が集合して出力側光導波路 Wherein the exit portion of the shape of a pair of V to the input side optical waveguide (11) is formed at the end portion of the pair of parallel optical waveguides formed by branches, opposite to the input optical wave guide (11) a substrate end face (1B) side, by forming alternately with said input optical waveguide (11) side of the substrate end face (1A) side, 3 or more pairs of parallel optical waveguides in the substrate (1) (12-1A, 12-2A, 12-1B, 12-2B, 12-1C, 12-2C ·····) is formed, a pair of parallel optical waveguides is set to the output-side optical waveguide of the last stage
    (15)が形成され、 一方の該出射部(13-1A,13-1B ・・・・)を介して連結した、一方の該平行光導波路(12-1A,12-1B,12-1C ・・・・) (15) is formed, one of the emitting section (13-1A, 13-1B · · · ·) are linked through an, one of the flat Yukimitsu waveguide (12-1A, 12-1B, 12-1c · ...)
    に添って、該基板(1) の表面に信号電極(16-1)が形成され、 他方の該出射部(13-2A,13-2B ・・・・)を介して連結した、他方の該平行光導波路(12-2A,12-2B,12-2C ・・・・) Along the surface to the signal electrode of the substrate (1) (16-1) is formed, and connected via the other of said emission portion (13-2A, 13-2B ····), the other of the parallel light waveguides (12-2A, 12-2B, 12-2C ····)
    に添って、該基板(1) の表面にアース電極(16-2)が形成されたことを特徴とする光変調器。 Along with the optical modulator, characterized in that the surface of the substrate (1) ground electrode (16-2) is formed.
  3. 【請求項3】 平行光導波路の端部に形成したVの字形の出射部の、基板端面に対する入射角αが、全反射角以上であることを特徴とする請求項1又は請求項2記載の光変調器。 Of wherein emitting portion of the shape of the V formed at the end of the parallel optical waveguides, incident angle α with respect to the substrate end face, according to claim 1 or claim 2, wherein the at least the total reflection angle optical modulator.
  4. 【請求項4】 平行光導波路の端部に形成したVの字形の出射部の頂点に対応する基板端面部分に、全反射膜が形成されたことを特徴とする請求項1又は請求項2記載の光変調器。 4. A substrate end face portion corresponding to the vertex of the exit portion of the shape of the V formed at the end of the parallel optical waveguides, according to claim 1 or claim 2, wherein the total reflection film is formed of the optical modulator.
JP3679092A 1992-02-25 1992-02-25 Light modulator Granted JPH05232417A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3679092A JPH05232417A (en) 1992-02-25 1992-02-25 Light modulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3679092A JPH05232417A (en) 1992-02-25 1992-02-25 Light modulator

Publications (1)

Publication Number Publication Date
JPH05232417A true JPH05232417A (en) 1993-09-10

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JP3679092A Granted JPH05232417A (en) 1992-02-25 1992-02-25 Light modulator

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EP0938000A2 (en) * 1998-02-23 1999-08-25 Fujitsu Limited Optical waveguide branch with reflector
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US6038354A (en) * 1997-03-19 2000-03-14 Tokin Corporation Optical modulator having a reflection plate mounted on a reflection end with an inclined angle against the reflection end
JP2004361952A (en) * 2003-05-30 2004-12-24 Jds Uniphase Corp Optical digital external modulator
JP2005099554A (en) * 2003-09-26 2005-04-14 Sumitomo Osaka Cement Co Ltd Reflection type optical modulator
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US7155072B2 (en) 2003-01-30 2006-12-26 Fujitsu Limited Optical modulator
JP2007094440A (en) * 2007-01-11 2007-04-12 Fujitsu Ltd Optical waveguide, optical device, and method for manufacturing the optical waveguide
WO2007058366A1 (en) * 2005-11-16 2007-05-24 Ngk Insulators, Ltd. Optical waveguide device
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Cited By (20)

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Publication number Priority date Publication date Assignee Title
US6038354A (en) * 1997-03-19 2000-03-14 Tokin Corporation Optical modulator having a reflection plate mounted on a reflection end with an inclined angle against the reflection end
EP0938000A2 (en) * 1998-02-23 1999-08-25 Fujitsu Limited Optical waveguide branch with reflector
EP0938000A3 (en) * 1998-02-23 2000-07-19 Fujitsu Limited Optical waveguide branch with reflector
US6243516B1 (en) 1998-02-23 2001-06-05 Fujitsu Limited Merging optical waveguides having branch angle within a specific range
EP0940698A2 (en) * 1998-03-05 1999-09-08 Lucent Technologies Inc. Compact mach-zehnder interferometer and wavelength reference employing same
EP0940698A3 (en) * 1998-03-05 2003-11-05 Lucent Technologies Inc. Compact mach-zehnder interferometer and wavelength reference employing same
US7155072B2 (en) 2003-01-30 2006-12-26 Fujitsu Limited Optical modulator
JP2004361952A (en) * 2003-05-30 2004-12-24 Jds Uniphase Corp Optical digital external modulator
JP2005099554A (en) * 2003-09-26 2005-04-14 Sumitomo Osaka Cement Co Ltd Reflection type optical modulator
JP4519436B2 (en) * 2003-09-26 2010-08-04 住友大阪セメント株式会社 Reflective optical modulator
JP4703158B2 (en) * 2004-10-05 2011-06-15 住友大阪セメント株式会社 Light control element
JP2006106365A (en) * 2004-10-05 2006-04-20 National Institute For Materials Science Optical controlling element
JP2006259543A (en) * 2005-03-18 2006-09-28 Fujitsu Ltd Optical device
JP4555715B2 (en) * 2005-03-18 2010-10-06 富士通株式会社 Optical devices
US7603002B2 (en) 2005-03-18 2009-10-13 Fujitsu Limited Optical device
US7529447B2 (en) 2005-11-16 2009-05-05 Ngk Insulators, Ltd. Optical waveguide devices
JPWO2007058366A1 (en) * 2005-11-16 2009-05-07 日本碍子株式会社 Optical waveguide device
WO2007058366A1 (en) * 2005-11-16 2007-05-24 Ngk Insulators, Ltd. Optical waveguide device
JP2007094440A (en) * 2007-01-11 2007-04-12 Fujitsu Ltd Optical waveguide, optical device, and method for manufacturing the optical waveguide
JP2012112886A (en) * 2010-11-26 2012-06-14 Ntt Electornics Corp Electric field sensor and method for measuring rf signal

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