JPH05232417A - Optical modulator - Google Patents
Optical modulatorInfo
- Publication number
- JPH05232417A JPH05232417A JP3679092A JP3679092A JPH05232417A JP H05232417 A JPH05232417 A JP H05232417A JP 3679092 A JP3679092 A JP 3679092A JP 3679092 A JP3679092 A JP 3679092A JP H05232417 A JPH05232417 A JP H05232417A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- parallel optical
- optical waveguides
- optical waveguide
- parallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
- G02F1/0356—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure controlled by a high-frequency electromagnetic wave component in an electric waveguide structure
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光変調器に係わり、特
にマッハツェンダ型変調器に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical modulator, and more particularly to a Mach-Zehnder type modulator.
【０００２】[0002]
【従来の技術】図３は従来のマッハツェンダ型変調器の
図であって、(A) は平面図,(B)は断面図である。2. Description of the Related Art FIGS. 3A and 3B are views of a conventional Mach-Zehnder type modulator, wherein FIG. 3A is a plan view and FIG. 3B is a sectional view.
【０００３】図３において１は、電気光学結晶よりなる
基板である。基板１の表面にTiを所望に拡散して、一方
の基板端面側に直線状に入力側光導波路２を設け、入力
側光導波路２を近接して（間隔Ｂは約10μm ) 平行配置
した一対の平行光導波路3-1,3-2 に分岐し、この一対の
平行光導波路3-1 ,3-2の他方の端末を集合して直線状の
出力側光導波路４としている。In FIG. 3, reference numeral 1 is a substrate made of an electro-optic crystal. Ti is diffused as desired on the surface of the substrate 1, the input side optical waveguide 2 is linearly provided on one end face of the substrate, and the input side optical waveguides 2 are closely arranged (spacing B is about 10 μm) in parallel. Of the parallel optical waveguides 3-1 and 3-2, and the other ends of the pair of parallel optical waveguides 3-1 and 3-2 are gathered to form a linear output-side optical waveguide 4.
【０００４】そして、基板１の表面にSiO2膜等のバッフ
ァ層６を形成し、バッファ層６の表面の一方の平行光導
波路3-1 の直上に、金等を蒸着して帯状の信号電極5-1
を、他方の平行光導波路3-2 の直上に金等を蒸着して、
帯状のアース電極5-2 をそれぞれ形成している。Then, a buffer layer 6 such as a SiO 2 film is formed on the surface of the substrate 1, and gold or the like is vapor-deposited on the surface of the buffer layer 6 directly on one of the parallel optical waveguides 3-1 to form a strip-shaped signal electrode. 5-1
Is deposited on the other parallel optical waveguide 3-2 directly above,
Band-shaped ground electrodes 5-2 are formed respectively.
【０００５】この信号電極及びアース電極の長さＬは、
等しくて20mm〜40mmである。なお、基板１の材料は電気
光学効果の大きいニオブ酸リチウム(LiNbO3)等を使用す
るものであるが、電気光学効果に方向性がある。したが
って、平行光導波路は、電気光学効果が大きい方向を選
択して形成している。The length L of the signal electrode and the ground electrode is
Equally 20mm-40mm. The material of the substrate 1 is lithium niobate (LiNbO 3 ) or the like, which has a large electro-optical effect, but the electro-optical effect is directional. Therefore, the parallel optical waveguide is formed by selecting the direction in which the electro-optical effect is large.
【０００６】光変調器は上述のように構成されているの
で、入力側光導波路２から光信号を伝送させている。そ
して、信号電極5-1 とアース電極5-2 間に電圧を印加し
ない状態で、出力側光導波路４の出力がオンとなる。Since the optical modulator is constructed as described above, the optical signal is transmitted from the input side optical waveguide 2. Then, the output of the output side optical waveguide 4 is turned on with no voltage applied between the signal electrode 5-1 and the ground electrode 5-2.
【０００７】また、信号電極5-1 とアース電極5-2 間に
所定の電圧が印加されると、平行光導波路の電気光学効
果で屈折率が変化し、平行光導波路3-1,3-2 を伝搬する
光信号の位相が波長／２だけずれるので、出力側光導波
路４の出力がオフとなる。即ち光変調器として機能す
る。Further, when a predetermined voltage is applied between the signal electrode 5-1 and the ground electrode 5-2, the refractive index changes due to the electro-optic effect of the parallel optical waveguides, and the parallel optical waveguides 3-1 and 3- Since the phase of the optical signal propagating through 2 is shifted by the wavelength / 2, the output of the output side optical waveguide 4 is turned off. That is, it functions as an optical modulator.
【０００８】[0008]
【発明が解決しようとする課題】マッハツェンダ型変調
器の光出力のオン・オフを行う位相差δは、次式の関係
がある。The phase difference δ for turning on / off the optical output of the Mach-Zehnder modulator has the following relationship.
【０００９】δ＝ａＬＶ ａ・・・基板の材料等により決定される定数 Ｌ・・・平行光導波路（電極長）の長さ Ｖ・・・印加する電圧 ところで、光変調器に印加する電圧は、例えば３Ｖ〜５
Ｖの低電圧のことが望ましい。Δ = aLV a: a constant determined by the material of the substrate, etc. L: length of the parallel optical waveguide (electrode length) V: applied voltage By the way, the voltage applied to the optical modulator is , For example, 3V-5
A low voltage of V is desirable.
【００１０】したがって光変調器を低電圧で作動させる
ためには、平行光導波路の長さを所定に長くすることが
要求され、これに伴い基板長が大きく（約50mm) とな
る。即ち、光変調器が長く大形となるばかりでなく、基
板が細長いために取扱に留意しないと、損傷するという
問題点があった。Therefore, in order to operate the optical modulator at a low voltage, it is required that the length of the parallel optical waveguide be lengthened to a predetermined length, and accordingly, the substrate length becomes large (about 50 mm). That is, there is a problem that not only the optical modulator becomes long and large, but also the substrate is long and slender, so that the optical modulator may be damaged unless handling is performed.
【００１１】本発明はこのような点に鑑みて創作された
もので、小形で、取扱いが容易な光変調器を提供するこ
とを目的としている。The present invention was created in view of the above points, and an object thereof is to provide a small-sized optical modulator which is easy to handle.
【００１２】[0012]
【課題を解決するための手段】上記の目的を達成するた
めに本発明は、図１に図示したように、一方の基板端面
1Aから他の基板端面1Bに向かって、基板１の表面部分に
形成した入力側光導波路11と、入力側光導波路11が分岐
してなる一対の平行光導波路12-1A,12-2A と、頂点が他
方の基板端面1Bに一致するよう、それぞれの平行光導波
路12-1A,12-2Aの端部に形成した一対のＶの字形の出射
部13-1,13-2 と、平行光導波路12-1A,12-2A に平行する
よう、それぞれの出射部13-1,13-2 の復路の端部に接続
形成した、他の一対の平行光導波路12-1B,12-2B と、後
段の一対の平行光導波路12-1B,12-2B が集合してなる出
力側光導波路15とを備えている。In order to achieve the above object, the present invention is directed to one substrate end surface as shown in FIG.
An input side optical waveguide 11 formed on the surface portion of the substrate 1 and a pair of parallel optical waveguides 12-1A, 12-2A formed by branching the input side optical waveguide 11 from 1A toward the other substrate end surface 1B, A pair of V-shaped emitting portions 13-1 and 13-2 formed at the ends of the parallel optical waveguides 12-1A and 12-2A so that the vertices coincide with the other substrate end surface 1B, and the parallel optical waveguides. The other pair of parallel optical waveguides 12-1B and 12-2B, which are connected and formed at the ends of the return paths of the output sections 13-1 and 13-2 so as to be parallel to 12-1A and 12-2A, And an output side optical waveguide 15 formed by assembling a pair of parallel optical waveguides 12-1B and 12-2B.
【００１３】そして、一方の出射部13-1を介して連結し
た一方の平行光導波路12-1A,12-1Bに添って、基板１の
表面に信号電極16-1を形成し、他方の出射部13-2を介し
て連結した他方の平行光導波路12-1B,12-2B に添って、
基板１の表面にアース電極16-2を形成した構成とする。Then, a signal electrode 16-1 is formed on the surface of the substrate 1 along one of the parallel optical waveguides 12-1A and 12-1B connected through one of the emitting portions 13-1, and the other is emitted. Along the other parallel optical waveguide 12-1B, 12-2B connected via the portion 13-2,
The ground electrode 16-2 is formed on the surface of the substrate 1.
【００１４】或いは図２に例示したように、入力側光導
波路11が分岐してなる一対の平行光導波路の端部に形成
するＶの字形の出射部を、入力側光導波路11とは反対側
の基板端面1B側と、入力側光導波路側の基板端面1A側と
に交互に形成することで、基板１に３対以上の平行光導
波路12-1A,12-2A,12-1B,12-2B,12-1C,12-2C を形成し、
最終段の一対の平行光導波路を集合して出力側光導波路
15を設ける。Alternatively, as illustrated in FIG. 2, a V-shaped emitting portion formed at the end of a pair of parallel optical waveguides formed by branching the input optical waveguide 11 is provided on the side opposite to the input optical waveguide 11. By alternately forming the substrate end face 1B side and the input side optical waveguide side substrate end face 1A side, three or more pairs of parallel optical waveguides 12-1A, 12-2A, 12-1B, 12- are formed on the substrate 1. 2B, 12-1C, 12-2C are formed,
Output side optical waveguide by gathering a pair of parallel optical waveguides at the final stage
Provide 15.
【００１５】そして、一方の出射部13-1A,13-1B を介し
て連結した、一方の平行光導波路12-1A,12-1B,12-1C に
添って信号電極16-1を形成し、他方の出射部13-2A,13-2
B を介して連結した、他方の平行光導波路12-2A,12-2B,
12-2C に添ってアース電極16-2を形成した構成とする。Then, a signal electrode 16-1 is formed along one of the parallel optical waveguides 12-1A, 12-1B, 12-1C, which are connected via one of the emitting portions 13-1A, 13-1B, The other emitting section 13-2A, 13-2
The other parallel optical waveguides 12-2A, 12-2B, connected via B,
The ground electrode 16-2 is formed along the 12-2C.
【００１６】或いはまた、図１に例示したように、平行
光導波路の端部に形成したＶの字形の出射部13-1,13-2
の基板端面に対する入射角αを、全反射角以上としたも
のとする。Alternatively, as illustrated in FIG. 1, a V-shaped emitting portion 13-1, 13-2 formed at the end portion of the parallel optical waveguide.
The incident angle α with respect to the substrate end surface is set to be equal to or larger than the total reflection angle.
【００１７】さらにまた、図２に例示したように、平行
光導波路の端部に形成したＶの字形の出射部13-1A 及び
出射部13-2A のそれぞれの頂点に対応する基板端面1B
に、全反射膜31を形成し、他の平行光導波路の端部に形
成したＶの字形の出射部13-1B及び出射部13-2B のそれ
ぞれの頂点に対応する基板端面1Aに、全反射膜32を形成
した構成とする。Furthermore, as illustrated in FIG. 2, the substrate end surface 1B corresponding to the respective apexes of the V-shaped emitting portions 13-1A and 13-2A formed at the ends of the parallel optical waveguide.
, And a total reflection film 31 is formed on the substrate end facet 1A corresponding to the apexes of the V-shaped emitting portions 13-1B and 13-2B formed at the ends of the other parallel optical waveguides. The film 32 is formed.
【００１８】[0018]
【作用】本発明は、入力側光導波路から分岐した平行光
導波路を、基板の端面で反転させて複数対の平行光導波
路を設け、それらの平行光導波路長の和を所定の長さに
することで、マッハツェンダ型変調器を構成させてい
る。According to the present invention, the parallel optical waveguide branched from the input side optical waveguide is inverted at the end face of the substrate to provide a plurality of pairs of parallel optical waveguides, and the sum of the parallel optical waveguide lengths is set to a predetermined length. Thus, a Mach-Zehnder type modulator is configured.
【００１９】したがって、従来の単に一対の平行光導波
路からなる光変調器に較べて、基板長さを短くすること
が可能となる。例えば平行光導波路を２対とすると、従
来のものの約半分の長さとなる。Therefore, it is possible to shorten the substrate length, as compared with the conventional optical modulator consisting of only a pair of parallel optical waveguides. For example, if there are two pairs of parallel optical waveguides, the length is about half that of the conventional one.
【００２０】一方、一対の平行光導波路の間隔は約１０
μm であるので、複数対の平行光導波路を設けてても、
光変調器の幅はさほど大きくはならない。即ち、幅は殆
ど変わらず長さだけが短くなり幅方向が小さい矩形とな
るので、光変調器の取扱いが容易となる。On the other hand, the distance between the pair of parallel optical waveguides is about 10.
Since it is μm, even if multiple pairs of parallel optical waveguides are provided,
The width of the light modulator is not so large. That is, since the width is almost unchanged and only the length is shortened and the width direction becomes a small rectangle, the optical modulator can be easily handled.
【００２１】また、出射部の入射角を全反射角以上とす
る、或いは出射部の頂点部分の基板端面に全反射膜を設
けることで、光損失が減少する。Further, the light loss is reduced by setting the incident angle of the emitting portion to be equal to or larger than the total reflection angle, or by providing the total reflection film on the end face of the substrate at the apex portion of the emitting portion.
【００２２】[0022]
【実施例】以下図を参照しながら、本発明を具体的に説
明する。なお、全図を通じて同一符号は同一対象物を示
す。The present invention will be described in detail with reference to the drawings. The same reference numerals denote the same objects throughout the drawings.
【００２３】図１は本発明の実施例の図、図２は本発明
の他の実施例の図である。図１において、電気光学結晶
（例えばニオブ酸リチウム）よりなる基板１の、一方の
基板端面1Aから他の基板端面1Bに向かって、基板１の表
面部分に短い直線状の入力側光導波路11を設け、入力側
光導波路11の端部をＶの字形に分岐し、所望の長さ（約
１０mm) の一対の平行光導波路12-1A,12-2A （間隔は約
10μm ) を設けている。この平行光導波路12-1A,12-2A
は、電気光学効果が大きい方向を選択して形成してい
る。FIG. 1 is a diagram of an embodiment of the present invention, and FIG. 2 is a diagram of another embodiment of the present invention. In FIG. 1, a short linear input-side optical waveguide 11 is provided on the surface portion of the substrate 1 from one substrate end surface 1A to the other substrate end surface 1B of a substrate 1 made of an electro-optic crystal (for example, lithium niobate). A pair of parallel optical waveguides 12-1A, 12-2A (distance: about 10 mm) with a desired length (about 10 mm) is provided by branching the end of the input-side optical waveguide 11 into a V shape.
10 μm). This parallel optical waveguide 12-1A, 12-2A
Are formed by selecting the direction in which the electro-optical effect is large.
【００２４】そして、それぞれの平行光導波路12-1A,12
-2A の端部に連結して、頂点が他方の基板端面1Bに一致
するように、一対のＶの字形の出射部13-1,13-2 を設け
ている。なお出射部13-1,13-2 の基板端面1B対する入射
角αを、全反射角（約45度)以上としている。Then, the respective parallel optical waveguides 12-1A, 12
A pair of V-shaped emission portions 13-1 and 13-2 are provided so as to be connected to the end portion of -2A so that the apex coincides with the other substrate end surface 1B. The incident angle α of the emitting portions 13-1 and 13-2 with respect to the substrate end surface 1B is set to a total reflection angle (about 45 degrees) or more.
【００２５】また、平行光導波路12-1A,12-2A に平行す
るように、それぞれの出射部13-1,13-2 の復路の端部に
始点が連結した、所望の長さ（約１０mm) の一対の平行
光導波路12-1B,12-2B を設けている。A desired length (about 10 mm) in which the starting points are connected to the ends of the return paths of the respective output parts 13-1, 13-2 so as to be parallel to the parallel optical waveguides 12-1A, 12-2A. ), A pair of parallel optical waveguides 12-1B and 12-2B are provided.
【００２６】そして、後段の一対の平行光導波路12-1B,
12-2B を、Ｖの字形に集合して１条の直線状の出力側光
導波路15とし、基板端面1Aまで延伸させている。なお、
上述の総ての光導波路は、基板１の表面にTiを所望に拡
散して設けたものである。Then, a pair of parallel optical waveguides 12-1B,
12-2B are assembled in a V shape to form a single linear output-side optical waveguide 15, which is extended to the substrate end surface 1A. In addition,
All of the above-mentioned optical waveguides are provided by spreading Ti on the surface of the substrate 1 as desired.
【００２７】この基板１の表面にSiO2膜等のバッファ層
を形成している。一方の出射部13-1を介して連結した一
方の平行光導波路12-1A,12-1B に添って、バッファ層の
表面に金等を蒸着して信号電極16-1を形成している。A buffer layer such as a SiO 2 film is formed on the surface of the substrate 1. A signal electrode 16-1 is formed by depositing gold or the like on the surface of the buffer layer along with the parallel optical waveguides 12-1A and 12-1B connected to each other via the output section 13-1.
【００２８】また、他方の出射部13-2を介して連結した
他方の平行光導波路12-1B,12-2B に添って、バッファ層
の表面に金等を蒸着してアース電極16-2を形成してい
る。そして、信号電極16-1とアース電極16-2の一方の端
部に、マイクロ波電源20を接続している。Further, along with the other parallel optical waveguides 12-1B and 12-2B connected through the other emitting portion 13-2, gold or the like is vapor-deposited on the surface of the buffer layer to form the ground electrode 16-2. Is forming. The microwave power source 20 is connected to one end of the signal electrode 16-1 and the ground electrode 16-2.
【００２９】なお、信号電極16-1とアース電極16-2との
他方の端部を所望の抵抗値の抵抗21を介して接続するこ
とで、印加するマイクロ波のインピーダンスをマッチン
グさせている。By connecting the other ends of the signal electrode 16-1 and the ground electrode 16-2 via the resistor 21 having a desired resistance value, the impedance of the microwave to be applied is matched.
【００３０】本発明の光変調器は上述のように構成され
ているので、入力側光導波路11から光信号を伝送すると
ともに、信号電極16-1とアース電極16-2との間に、マイ
クロ波電源20から電界を印加して、信号電極16-1にマイ
クロ波を通している。Since the optical modulator of the present invention is configured as described above, the optical signal is transmitted from the input side optical waveguide 11, and the micro modulator is provided between the signal electrode 16-1 and the ground electrode 16-2. An electric field is applied from the wave power source 20 to pass the microwave through the signal electrode 16-1.
【００３１】本発明の実施例は、このように電極にマイ
クロ波を通して、光信号と変調電気信号の速度を等しく
し、所謂進行波形変調器とすることで、光変調器の変調
帯域を拡開（２GHZ 〜10GHZ ) している。In the embodiment of the present invention, the microwaves are passed through the electrodes in this way to make the speeds of the optical signal and the modulated electric signal equal to each other to form a so-called traveling waveform modulator, thereby expanding the modulation band of the optical modulator. are (2GH Z ~10GH Z).
【００３２】したがって、従来の単に一対の平行光導波
路からなる光変調器に較べて、基板長さが約半分とな
る。図２は、平行光導波路を３対設けた実施例である。Therefore, the substrate length is about half that of the conventional optical modulator consisting of a pair of parallel optical waveguides. FIG. 2 shows an example in which three pairs of parallel optical waveguides are provided.
【００３３】図２において、基板１の一方の基板端面1A
から他の基板端面1Bに向かって、基板１の表面部分に短
い直線状の入力側光導波路11を設け、入力側光導波路11
の端部をＶの字形に分岐して、所望の長さの一対の平行
光導波路12-1A,12-2A （間隔は約10μm ) を設けてい
る。この平行光導波路12-1A,12-2A は、電気光学効果が
大きい方向を選択して形成している。In FIG. 2, one substrate end surface 1A of the substrate 1
From the other end face 1B of the substrate, a short linear input-side optical waveguide 11 is provided on the surface of the substrate 1, and the input-side optical waveguide 11 is provided.
Is branched into a V-shape, and a pair of parallel optical waveguides 12-1A and 12-2A (with a spacing of about 10 μm) having a desired length are provided. The parallel optical waveguides 12-1A and 12-2A are formed by selecting the direction in which the electro-optical effect is large.
【００３４】そして、それぞれの平行光導波路12-1A,12
-2A の端部に連結して、頂点が他方の基板端面1Bに一致
するように、一対のＶの字形の出射部13-1A,13-2A を設
けている。そして、平行光導波路12-1A,12-2A に平行す
るように、それぞれの出射部13-1A,13-2A の復路の端部
に始点が連結した、所望の長さの一対の平行光導波路12
-1B,12-2B を設け、それぞれの平行光導波路12-1B,12-2
B の端部に連結して、頂点が入力側光導波路11側の基板
端面1Aに一致するように、一対のＶの字形の出射部13-1
B,13-2B を設けている。Then, the respective parallel optical waveguides 12-1A and 12-1
A pair of V-shaped emitting portions 13-1A and 13-2A are provided so as to be connected to the end portion of -2A so that the apex coincides with the other substrate end surface 1B. Then, a pair of parallel optical waveguides having a desired length, in which the starting points are connected to the ends of the return paths of the respective output parts 13-1A and 13-2A so as to be parallel to the parallel optical waveguides 12-1A and 12-2A. 12
-1B and 12-2B are provided, and the parallel optical waveguides 12-1B and 12-2 are provided.
A pair of V-shaped emitting portions 13-1 are connected to the end portions of B so that the vertices coincide with the substrate end surface 1A on the input side optical waveguide 11 side.
B, 13-2B are provided.
【００３５】さらに、それぞれの出射部13-1B,13-2B の
復路の端部に始点が連結した、所望の長さの一対の平行
光導波路12-1C,12-2C を設けている。そして、その一対
の平行光導波路12-1C,12-2C を、Ｖの字形に集合して１
条の直線状の出力側光導波路15とし、基板端面1Bまで延
伸させている。Further, a pair of parallel optical waveguides 12-1C and 12-2C having desired lengths are provided, the starting points of which are connected to the ends of the return paths of the respective emitting portions 13-1B and 13-2B. Then, the pair of parallel optical waveguides 12-1C and 12-2C are assembled into a V-shape to form 1
A linear output-side optical waveguide 15 is formed, and is extended to the substrate end surface 1B.
【００３６】この基板１の表面にSiO2膜等のバッファ層
を形成し、一方の平行光導波路12-1A ー出射部13-1A ー
平行光導波路12-1B ー出射部13-1B ー平行光導波路12-1
C よりなる一連の光導波路の、平行光導波路12-1A,12-1
B,12-1C に添って、バッファ層の表面に金等を蒸着して
信号電極16-1を形成している。A buffer layer such as a SiO 2 film is formed on the surface of the substrate 1, and one of the parallel optical waveguides 12-1A-emission section 13-1A-parallel optical waveguide 12-1B-emission section 13-1B-parallel optical waveguide is formed. Waveguide 12-1
Parallel optical waveguides 12-1A, 12-1 of a series of optical waveguides made of C
A signal electrode 16-1 is formed by depositing gold or the like on the surface of the buffer layer along with B and 12-1C.
【００３７】また、他方の平行光導波路12-2A ー出射部
13-2A ー平行光導波路12-2B ー出射部13-2B ー平行光導
波路12-2C よりなる一連の光導波路の、平行光導波路12
-2A,12-2B,12-2C に添って、バッファ層の表面に金等を
蒸着してアース電極16-2を形成している。Further, the other parallel optical waveguide 12-2A-emission part
13-2A-parallel optical waveguide 12-2B-emission part 13-2B-parallel optical waveguide 12-2C
Along with -2A, 12-2B, 12-2C, gold or the like is vapor-deposited on the surface of the buffer layer to form the ground electrode 16-2.
【００３８】そして、信号電極16-1とアース電極16-2の
一方の端部に、マイクロ波電源20を接続している。一
方、平行光導波路の端部に形成したＶの字形の出射部13
-1A 及び出射部13-2A のそれぞれの頂点に対応する基板
端面1Bに、全反射膜31を形成し、他の平行光導波路の端
部に形成したＶの字形の出射部13-1B 及び出射部13-2B
のそれぞれの頂点に対応する基板端面1Aに、全反射膜32
を形成している。The microwave power source 20 is connected to one end of the signal electrode 16-1 and the ground electrode 16-2. On the other hand, a V-shaped emitting portion 13 formed at the end of the parallel optical waveguide
-1A and the emission part 13-2A, the V-shaped emission part 13-1B and the emission part 13-1B formed on the end face of the other parallel optical waveguide by forming the total reflection film 31 on the substrate end face 1B corresponding to each vertex. Part 13-2B
Of the total reflection film 32 on the substrate end surface 1A corresponding to each vertex of
Is formed.
【００３９】したがって、図２に例示した光変調器は、
従来の単に一対の平行光導波路からなる光変調器に較べ
て、基板長さが約１／３となる。一方、一対の平行光導
波路の間隔は約１０μm であるので、３対の平行光導波
路を設けても、光変調器の幅はさほど大きくはならなく
て、基板の形状は幅方向が小さい矩形となる。Therefore, the optical modulator illustrated in FIG.
The substrate length is about 1/3 of that of the conventional optical modulator which is simply composed of a pair of parallel optical waveguides. On the other hand, since the distance between the pair of parallel optical waveguides is about 10 μm, the width of the optical modulator does not become so large even if three pairs of parallel optical waveguides are provided, and the shape of the substrate is a rectangle with a small width direction. Become.
【００４０】[0040]
【発明の効果】以上説明したように本発明は、マッハツ
ェンダ型変調器の平行光導波路を、基板端面で折り返し
て複数対設けたことにより、基板の長さが小さくなっ
て、光変調器の小形化が推進される。As described above, according to the present invention, the parallel optical waveguide of the Mach-Zehnder modulator is folded back at the end face of the substrate and a plurality of pairs are provided, so that the length of the substrate is reduced and the optical modulator is miniaturized. Is promoted.
【００４１】また、基板が小形の矩形になるので、取扱
いが容易で、且つ基板が損傷し難くなる。一方、Ｖの字
形の出射部の入射角を全反射角以上にする、或いはＶの
字形の出射部の頂点に対応する基板端面に全反射膜を設
けることで、光損失が減少するという効果を有する。Further, since the substrate has a small rectangular shape, it is easy to handle and the substrate is less likely to be damaged. On the other hand, by setting the incident angle of the V-shaped emission portion to be equal to or larger than the total reflection angle or by providing the total reflection film on the end face of the substrate corresponding to the apex of the V-shaped emission portion, the effect of reducing the optical loss is obtained. Have.
【図１】 本発明の実施例の図FIG. 1 is a diagram of an embodiment of the present invention.
【図２】 本発明の他の実施例の図FIG. 2 is a diagram of another embodiment of the present invention.
【図３】 従来例の図で (A) は平面図 (B) は断面図FIG. 3 is a diagram of a conventional example, (A) is a plan view, and (B) is a sectional view.
１ 基板 1A,1B 基板端面 ２，11 入力側光導波路 ４，15 出力側光導波路 3-1,3-2,12-1A,12-2A,12-1B,12-2B,12-1C,12-2C 平行
光導波路 5-1,16-1 信号電極 5-2,16-2 アース電極 13-1,13-2,13-1A,13-2A,13-1B,13-2B 出射部 20 マイクロ波電源 31,32 全反射膜1 Substrate 1A, 1B Substrate end face 2,11 Input side optical waveguide 4,15 Output side optical waveguide 3-1,3-2,12-1A, 12-2A, 12-1B, 12-2B, 12-1C, 12 -2C Parallel optical waveguide 5-1,16-1 Signal electrode 5-2,16-2 Ground electrode 13-1,13-2,13-1A, 13-2A, 13-1B, 13-2B Emitting part 20 micro Wave power supply 31,32 Total reflection film
Claims (4)
B)に向かって、基板(1) の表面部分に形成した入力側光
導波路(11)と、 該入力側光導波路(11)が分岐してなる一対の平行光導波
路(12-1A,12-2A) と、 頂点が他方の基板端面(1B)に一致するよう、それぞれの
該平行光導波路(12-1A,12-2A) の端部に形成した一対の
Ｖの字形の出射部(13-1,13-2) と、 該平行光導波路(12-1A,12-2A) に平行するよう、それぞ
れの該出射部(13-1,13-2) の復路の端部に接続形成し
た、他の一対の平行光導波路(12-1B,12-2B) と、 後段の該一対の平行光導波路(12-1B,12-2B) が集合して
なる出力側光導波路(15)と、 一方の該出射部(13-1)を介して連結した一方の該平行光
導波路(12-1A,12-1B)に添って、該基板(1) の表面に形
成した信号電極(16-1)と、 他方の該出射部(13-2)を介して連結した他方の該平行光
導波路(12-1B,12-2B)に添って、該基板(1) の表面に形
成したアース電極(16-2)とを、備えたこと特徴とする光
変調器。1. An end surface (1A) of one substrate to an end surface (1A) of another substrate
Toward B), the input side optical waveguide (11) formed on the surface part of the substrate (1) and a pair of parallel optical waveguides (12-1A, 12- 2A) and a pair of V-shaped emitting portions (13-) formed at the ends of the parallel optical waveguides (12-1A, 12-2A) so that their vertices coincide with the other substrate end surface (1B). 1, 13-2) and the parallel optical waveguides (12-1A, 12-2A) are formed so as to be connected to the ends of the return paths of the respective output parts (13-1, 13-2) so as to be parallel to each other. Another pair of parallel optical waveguides (12-1B, 12-2B) and an output side optical waveguide (15) formed by collecting the pair of parallel optical waveguides (12-1B, 12-2B) in the subsequent stage, A signal electrode (16-1) formed on the surface of the substrate (1) along with one of the parallel optical waveguides (12-1A, 12-1B) connected through the emitting portion (13-1) of And the ground formed on the surface of the substrate (1) along with the other parallel optical waveguide (12-1B, 12-2B) connected through the other emission part (13-2). Pole (16-2) and the light modulator, characterized by comprising.
の平行光導波路の端部に形成する一対のＶの字形の出射
部を、入力側光導波路(11)とは反対側の基板端面(1B)側
と、該入力側光導波路(11)側の基板端面(1A)側とに交互
に形成することで、基板(1) に３対以上の平行光導波路
（12-1A,12-2A,12-1B,12-2B,12-1C,12-2C ・・・・・)が形成
され、 最終段の一対の平行光導波路が集合して出力側光導波路
(15)が形成され、 一方の該出射部（13-1A,13-1B ・・・・）を介して連結し
た、一方の該平行光導波路（12-1A,12-1B,12-1C ・・・・）
に添って、該基板(1) の表面に信号電極(16-1)が形成さ
れ、 他方の該出射部（13-2A,13-2B ・・・・）を介して連結し
た、他方の該平行光導波路（12-2A,12-2B,12-2C ・・・・）
に添って、該基板(1) の表面にアース電極(16-2)が形成
されたことを特徴とする光変調器。2. A pair of V-shaped emitting portions formed at ends of a pair of parallel optical waveguides formed by branching the input optical waveguide (11) are provided on the side opposite to the input optical waveguide (11). By alternately forming the substrate end surface (1B) side and the input side optical waveguide (11) side substrate end surface (1A) side, three or more pairs of parallel optical waveguides (12-1A, 12-2A, 12-1B, 12-2B, 12-1C, 12-2C ...) are formed, and a pair of parallel optical waveguides at the final stage are gathered to form an output-side optical waveguide.
(15) is formed, one of the parallel optical waveguides (12-1A, 12-1B, 12-1C ...)
A signal electrode (16-1) is formed on the surface of the substrate (1) according to the above, and the signal electrode (16-1) is connected via the other emitting portion (13-2A, 13-2B ... Parallel optical waveguide (12-2A, 12-2B, 12-2C ...)
An optical modulator characterized in that a ground electrode (16-2) is formed on the surface of the substrate (1) according to the above.
の出射部の、基板端面に対する入射角αが、全反射角以
上であることを特徴とする請求項１又は請求項２記載の
光変調器。3. The incident angle α of the V-shaped emitting portion formed at the end of the parallel optical waveguide with respect to the end face of the substrate is equal to or more than the total reflection angle. Light modulator.
の出射部の頂点に対応する基板端面部分に、全反射膜が
形成されたことを特徴とする請求項１又は請求項２記載
の光変調器。4. A total reflection film is formed on a substrate end face portion corresponding to the apex of a V-shaped emitting portion formed on the end portion of the parallel optical waveguide. Light modulator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3679092A JPH05232417A (en) | 1992-02-25 | 1992-02-25 | Optical modulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3679092A JPH05232417A (en) | 1992-02-25 | 1992-02-25 | Optical modulator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05232417A true JPH05232417A (en) | 1993-09-10 |
Family
ID=12479587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3679092A Withdrawn JPH05232417A (en) | 1992-02-25 | 1992-02-25 | Optical modulator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05232417A (en) |
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| EP0938000A2 (en) * | 1998-02-23 | 1999-08-25 | Fujitsu Limited | Optical waveguide branch with reflector |
| EP0940698A2 (en) * | 1998-03-05 | 1999-09-08 | Lucent Technologies Inc. | Compact mach-zehnder interferometer and wavelength reference employing same |
| US6038354A (en) * | 1997-03-19 | 2000-03-14 | Tokin Corporation | Optical modulator having a reflection plate mounted on a reflection end with an inclined angle against the reflection end |
| JP2004361952A (en) * | 2003-05-30 | 2004-12-24 | Jds Uniphase Corp | Optical digital external modulator |
| JP2005099554A (en) * | 2003-09-26 | 2005-04-14 | Sumitomo Osaka Cement Co Ltd | Reflection type optical modulator |
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| JP2007094440A (en) * | 2007-01-11 | 2007-04-12 | Fujitsu Ltd | Optical waveguide, optical device, and method for manufacturing the optical waveguide |
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1992
- 1992-02-25 JP JP3679092A patent/JPH05232417A/en not_active Withdrawn
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|---|---|---|---|---|
| US6038354A (en) * | 1997-03-19 | 2000-03-14 | Tokin Corporation | Optical modulator having a reflection plate mounted on a reflection end with an inclined angle against the reflection end |
| EP0938000A3 (en) * | 1998-02-23 | 2000-07-19 | Fujitsu Limited | Optical waveguide branch with reflector |
| US6243516B1 (en) | 1998-02-23 | 2001-06-05 | Fujitsu Limited | Merging optical waveguides having branch angle within a specific range |
| EP0938000A2 (en) * | 1998-02-23 | 1999-08-25 | Fujitsu Limited | Optical waveguide branch with reflector |
| EP0940698A2 (en) * | 1998-03-05 | 1999-09-08 | Lucent Technologies Inc. | Compact mach-zehnder interferometer and wavelength reference employing same |
| EP0940698A3 (en) * | 1998-03-05 | 2003-11-05 | Lucent Technologies Inc. | Compact mach-zehnder interferometer and wavelength reference employing same |
| US7155072B2 (en) | 2003-01-30 | 2006-12-26 | Fujitsu Limited | Optical modulator |
| JP2004361952A (en) * | 2003-05-30 | 2004-12-24 | Jds Uniphase Corp | Optical digital external modulator |
| JP2005099554A (en) * | 2003-09-26 | 2005-04-14 | Sumitomo Osaka Cement Co Ltd | Reflection type optical modulator |
| JP4519436B2 (en) * | 2003-09-26 | 2010-08-04 | 住友大阪セメント株式会社 | Reflective light modulator |
| JP4703158B2 (en) * | 2004-10-05 | 2011-06-15 | 住友大阪セメント株式会社 | Light control element |
| JP2006106365A (en) * | 2004-10-05 | 2006-04-20 | Sumitomo Osaka Cement Co Ltd | Optical controlling element |
| US7603002B2 (en) | 2005-03-18 | 2009-10-13 | Fujitsu Limited | Optical device |
| JP4555715B2 (en) * | 2005-03-18 | 2010-10-06 | 富士通株式会社 | Optical device |
| JP2006259543A (en) * | 2005-03-18 | 2006-09-28 | Fujitsu Ltd | Optical device |
| JPWO2007058366A1 (en) * | 2005-11-16 | 2009-05-07 | 日本碍子株式会社 | Optical waveguide device |
| US7529447B2 (en) | 2005-11-16 | 2009-05-05 | Ngk Insulators, Ltd. | Optical waveguide devices |
| WO2007058366A1 (en) * | 2005-11-16 | 2007-05-24 | Ngk Insulators, Ltd. | Optical waveguide device |
| JP2007094440A (en) * | 2007-01-11 | 2007-04-12 | Fujitsu Ltd | Optical waveguide, optical device, and method for manufacturing the optical waveguide |
| JP2012112886A (en) * | 2010-11-26 | 2012-06-14 | Ntt Electornics Corp | Electric field sensor and method for measuring rf signal |
| CN106125351A (en) * | 2016-08-12 | 2016-11-16 | 全球能源互联网研究院 | A kind of reflective electrooptic phase-modulator |
| US10948800B2 (en) | 2017-12-20 | 2021-03-16 | Fujitsu Optical Components Limited | Optical modulator with an optical waveguide partially folded back and optical module with the optical modulator |
| WO2022091980A1 (en) * | 2020-10-30 | 2022-05-05 | 住友大阪セメント株式会社 | Optical waveguide element, optical waveguide device, and optical transmission apparatus |
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| CN113867014B (en) * | 2021-09-10 | 2022-08-12 | 清华大学 | Bending type electro-optical modulator and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990518 |