JPH05218461A - Optical receiving module - Google Patents
Optical receiving moduleInfo
- Publication number
- JPH05218461A JPH05218461A JP4017446A JP1744692A JPH05218461A JP H05218461 A JPH05218461 A JP H05218461A JP 4017446 A JP4017446 A JP 4017446A JP 1744692 A JP1744692 A JP 1744692A JP H05218461 A JPH05218461 A JP H05218461A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- receiving element
- wire bond
- substrate
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Optical Couplings Of Light Guides (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は光受信モジュールに関
し、特に信号伝送帯域が1GHzを越える光通信用の光
受信モジュールに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical receiver module, and more particularly to an optical receiver module for optical communication whose signal transmission band exceeds 1 GHz.
【0002】[0002]
【従来の技術】従来の光受信モジュールは、例えば、特
願平1−199620号公報等に記載されているように
増幅集積回路はHIC基板上に搭載してあり、電気信号
の接続あるいは直流バイアス供給に使用するワイヤボン
ドは少なくとも増幅集積回路の基板厚の段差を接続する
ための長さを必要としていた。2. Description of the Related Art In a conventional optical receiving module, an amplifier integrated circuit is mounted on a HIC substrate as described in Japanese Patent Application No. 1-199620, for example, and an electric signal is connected or a DC bias is applied. The wire bond used for supply needs at least a length for connecting a step difference in substrate thickness of the amplifier integrated circuit.
【0003】また、受光素子を搭載するサブキャリアと
増幅集積回路の入力パッド迄の間においてワイヤボンド
が1度前記HIC基板上に接続されるので、サブキャリ
ア−HIC基板間,HIC基板−増幅集積回路間に2本
ワイヤボンド必要としていた。Further, since a wire bond is once connected to the HIC substrate between the sub-carrier on which the light receiving element is mounted and the input pad of the amplification integrated circuit, between the sub-carrier and the HIC substrate and between the HIC substrate and the amplification integrated circuit. Two wire bonds were needed between the circuits.
【0004】図2に前記の従来モジュールを示す。従来
までの光受信モジュールにおいて、受光素子51はサブ
キャリア52に搭載され、増幅素子53はHIC54に
搭載されている。光ファイバ55から導かれた微弱な光
信号はレンズ56により受光素子51に到達し、光−電
気変換されて増幅素子53に入力する。増幅素子53の
出力信号はモジュールのパッケージ60の出力部に導か
れる。57はパイプ、58は金属板、59は金属ベー
ス、60はパッケージである。FIG. 2 shows the conventional module described above. In the conventional optical receiving module, the light receiving element 51 is mounted on the subcarrier 52, and the amplifying element 53 is mounted on the HIC 54. The weak optical signal guided from the optical fiber 55 reaches the light receiving element 51 by the lens 56, is photo-electrically converted, and is input to the amplifying element 53. The output signal of the amplification element 53 is guided to the output of the package 60 of the module. Reference numeral 57 is a pipe, 58 is a metal plate, 59 is a metal base, and 60 is a package.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、従来の
技術によれば前記増幅集積回路の出力パッドから前記H
ICの信号用の伝送路迄ワイヤボンドに起因するインダ
クタンスが大きくなり、伝送帯域の特に高周波領域での
光受信モジュールの出力電圧定在波比が大きくなる欠点
があった。However, according to the prior art, the output pad of the amplifier integrated circuit is replaced with the H
There is a drawback that the inductance due to the wire bond becomes large up to the transmission line for the signal of the IC, and the standing voltage ratio of the output voltage of the optical receiving module becomes large especially in the high frequency region of the transmission band.
【0006】また、増幅集積回路の直流バイアス供給に
使用するワイヤボンドのインダクタンスと、増幅集積回
路内のあるいは寄生の容量とのカップリングに起因する
LC共振の不要なピーキングあるいは周波数特性のディ
ップが伝送帯域内に発生する欠点があった。Further, unnecessary peaking of LC resonance or dip of frequency characteristic is transmitted due to coupling between the inductance of the wire bond used for supplying the DC bias of the amplifier integrated circuit and the parasitic capacitance in the amplifier integrated circuit. There was a drawback that occurred within the band.
【0007】また同様に、前記受光素子と前記増幅集積
回路間のワイヤボンドのインダクタンスと、受光素子と
サブキャリア間のワイヤボンドのインダクタンスと、受
光素子の接合容量とサブキャリアの容量と寄生の容量と
のカップリングに起因するLC共振の不要なピーキング
あるいは周波数特性のディップが伝送帯域内に発生する
欠点があった。Similarly, the wire bond inductance between the light receiving element and the amplification integrated circuit, the wire bond inductance between the light receiving element and the subcarrier, the junction capacitance of the light receiving element, the capacitance of the subcarrier, and the parasitic capacitance. There is a drawback that unnecessary peaking of LC resonance or dip of frequency characteristic occurs in the transmission band due to the coupling with.
【0008】本発明は上記の点を鑑みてなされたもので
ある。本発明の目的は、不要なピーキングあるいは周波
数特性のディップが伝送帯域内に発生しないようにワイ
ヤボンドに起因するインダクタンスを抑圧するため、ワ
イヤボンドの本数を減らし、ワイヤボンドの長さを短く
するためファーストボンドの高さとセカンドボンドの高
さを一致させることにより受信感度を向上できる構造の
光受信モジュールを提供することである。The present invention has been made in view of the above points. An object of the present invention is to suppress the inductance caused by wire bonds so that unnecessary peaking or dip in frequency characteristics does not occur in the transmission band, and thus to reduce the number of wire bonds and shorten the length of wire bonds. An object of the present invention is to provide an optical receiver module having a structure capable of improving the receiving sensitivity by matching the height of the first bond and the height of the second bond.
【0009】[0009]
【課題を解決するための手段】上記目的は、前記増幅集
積回路の直流バイアスを供給するためのあるいは出力信
号を伝送するためのHIC基板に該増幅集積回路のチッ
プ厚と同一の基板を採用し、該HIC基板と該増幅集積
回路を同一の金属ベース上に隣接して搭載し、かつ、前
記受光素子のサブキャリアの信号出力用電極パターンの
高さと該増幅集積回路の入力パッドの高さを同一になる
ように配置して、該サブキャリア−該増幅集積回路の入
力パッド間を直接ワイヤボンドし、かつ、同一の高さの
該増幅集積回路の出力パッド−該HIC基板上の伝送線
路間を可能な限り短くワイヤボンドすることにより達成
される。The above object is to adopt a substrate having the same chip thickness as the HIC substrate for supplying a DC bias or transmitting an output signal of the amplifier integrated circuit. The HIC substrate and the amplification integrated circuit are mounted adjacent to each other on the same metal base, and the height of the signal output electrode pattern of the subcarrier of the light receiving element and the height of the input pad of the amplification integrated circuit are set. Directly wire-bonded between the sub-carrier and the input pad of the amplifier integrated circuit by arranging them to be the same, and between the output pad of the amplifier integrated circuit of the same height and the transmission line on the HIC substrate. Is achieved by wire bonding as short as possible.
【0010】[0010]
【作用】一般に集積回路において、入出力パッドは集積
回路チップの裏面GNDとの間に生じる容量を小さくす
るため面積を小さく作成される。また、集積回路チップ
の厚さを薄くするとワイヤボンドの長さが短くなるので
インダクタンスは小さくなるが、上記容量はその厚さに
反比例するため逆に増加する。Generally, in an integrated circuit, the input / output pad is formed to have a small area in order to reduce the capacitance generated between the input / output pad and the back surface GND of the integrated circuit chip. Further, if the thickness of the integrated circuit chip is reduced, the wire bond length is shortened, and thus the inductance is reduced, but the capacitance is inversely proportional to the thickness, and conversely increases.
【0011】一方、ワイヤボンドの直径を太くするとイ
ンダクタンスは小さくなるが、集積回路チップのパッド
面積を大きくする必要が生じて裏面GNDとの間の容量
が大きくなってしまう。On the other hand, when the diameter of the wire bond is increased, the inductance is reduced, but it is necessary to increase the pad area of the integrated circuit chip, and the capacitance between the back surface GND is increased.
【0012】上記において、集積回路をHIC上に搭載
し、かつワイヤボンドの本数を増加する方法も考えられ
なくもない。しかし、2本ワイヤボンドを平行に同じ長
さで接続したとしても全体のインダクタンスは1本の場
合の高々7割程度にしか低減しないので、2本分の面積
増加による2倍の容量値増加が生じるため総合的に考え
るとマイナス効果になってしまう。In the above, a method of mounting the integrated circuit on the HIC and increasing the number of wire bonds can be considered. However, even if two wire bonds are connected in parallel with each other in the same length, the total inductance is reduced to about 70% of the case of one wire. Since it occurs, it has a negative effect when considered comprehensively.
【0013】また、容量値は抵抗値との積で決まる時定
数により、光受信モジュールの帯域を狭める要因になる
ため可能な限り低減する必要がある。そのため、ワイヤ
ボンドに起因するインダクタンスが若干大きくなるマイ
ナス面を犠牲にしても、容量値が低減するように受光素
子と集積回路を設計することが通例である。Further, the capacitance value is a factor that narrows the band of the optical receiving module due to the time constant determined by the product of the resistance value, and therefore it must be reduced as much as possible. Therefore, it is customary to design the light-receiving element and the integrated circuit so that the capacitance value is reduced even at the expense of the negative surface where the inductance due to wire bonding is slightly increased.
【0014】以上のことから、伝送帯域内に不要なピー
キングあるいは周波数特性のディップを発生させないよ
うにするにはワイヤボンドを可能な限り短くして、LC
共振の周波数を伝送帯域よりも少なくとも2倍程度の高
周波領域に設定すれば周波数特性の劣化による光受信モ
ジュールの受信感度の劣化を防止することができる。From the above, in order to prevent unnecessary peaking or frequency characteristic dips in the transmission band, the wire bond should be as short as possible and LC
If the resonance frequency is set to a high frequency region which is at least about twice as high as the transmission band, it is possible to prevent deterioration of the reception sensitivity of the optical receiving module due to deterioration of the frequency characteristic.
【0015】[0015]
【実施例】以下、本発明の実施例を図面を用いて説明す
る。Embodiments of the present invention will be described below with reference to the drawings.
【0016】図1は本発明の一実施例を示す断面図であ
る。FIG. 1 is a sectional view showing an embodiment of the present invention.
【0017】図1において、光ファイバ15を伝送して
きた微弱な光信号はレンズ16で集光されて受光素子1
1に到達する。受光素子11により光−電気変換された
後受光素子が搭載されているサブキャリア13の金属電
極にワイヤボンド18で接続される。サブキャリア上に
メタライズされた配線金属を介して、更にワイヤボンド
19で増幅集積回路12に接続される。増幅集積回路1
2はHIC基板14と隣接して同一の金属ベース21の
上に搭載される。通常増幅集積回路のチップ厚はパッド
容量、あるいは製造工程を考慮して0.6mmの厚さと
なる。このチップ厚と同一のHIC基板を選択すると、
高周波信号が伝送されること、ワイヤボンドとの整合性
から材質がアルミナのセラミック基板の0.635mm
厚のものが適切である。増幅集積回路12で増幅された
出力信号はワイヤボンド20でHIC基板12上の伝送
線路へ接続される。伝送線路を通った出力信号はパッケ
ージ22の出力端子へ接続され、後段の回路に導かれ
る。17はパイプで、光ファイバ15とレンズ16を保
持している。In FIG. 1, the weak optical signal transmitted through the optical fiber 15 is condensed by the lens 16 to be received by the light receiving element 1.
Reach 1. After being photo-electrically converted by the light receiving element 11, the wire electrode 18 is connected to the metal electrode of the subcarrier 13 on which the light receiving element is mounted. It is further connected to the amplifier integrated circuit 12 by a wire bond 19 through a wiring metal metalized on the subcarrier. Amplification integrated circuit 1
2 is mounted on the same metal base 21 adjacent to the HIC board 14. Usually, the chip thickness of the amplifier integrated circuit is 0.6 mm in consideration of the pad capacitance or the manufacturing process. If you select the same HIC substrate as this chip thickness,
High-frequency signal is transmitted and the compatibility with wire bonds makes it possible to use a ceramic substrate made of alumina with a thickness of 0.635 mm.
Thick ones are suitable. The output signal amplified by the amplifier integrated circuit 12 is connected to the transmission line on the HIC substrate 12 by the wire bond 20. The output signal that has passed through the transmission line is connected to the output terminal of the package 22 and guided to the circuit at the subsequent stage. A pipe 17 holds the optical fiber 15 and the lens 16.
【0018】[0018]
【発明の効果】以上説明したように本発明によれば、受
信感度の向上を図るため受光素子のサブキャリアと増幅
集積回路のワイヤボンドする高さを同一にし、かつ、増
幅集積回路とHIC基板のワイヤボンドする高さを同一
にすることにより、ワイヤボンドの本数を少なくするこ
とができ、かつ、長さを短くすることが可能となりイン
ダクタンスが低減できる構造の光受信モジュール受信回
路を提供することができる。As described above, according to the present invention, in order to improve the receiving sensitivity, the heights of wire-bonding the sub-carrier of the light receiving element and the amplification integrated circuit are made the same, and the amplification integrated circuit and the HIC substrate are made. To provide an optical receiver module receiving circuit having a structure in which the number of wire bonds can be reduced and the length can be shortened by making the same wire-bonding heights, and the inductance can be reduced. You can
【図1】本発明の一実施例を示す断面図である。FIG. 1 is a sectional view showing an embodiment of the present invention.
【図2】従来技術の構造を示す断面図である。FIG. 2 is a cross-sectional view showing the structure of the prior art.
11…受光素子、12…増幅集積回路、13…サブキャ
リア、14…HIC基板、15…光ファイバ、16…レ
ンズ、17…パイプ、18,19,20…ワイヤボン
ド、21…金属ベース、22…パッケージ、51…従来
技術例の受光素子、52…従来技術例のサブキャリア、
53…従来技術例の増幅素子、54…従来技術例のHI
C、55…従来技術例の光ファイバ、56…従来技術例
のレンズ、57…従来技術例のパイプ、58…従来技術
例の金属板、59…従来技術例の金属ベース、60…従
来技術例のパッケージ。11 ... Light receiving element, 12 ... Amplification integrated circuit, 13 ... Subcarrier, 14 ... HIC substrate, 15 ... Optical fiber, 16 ... Lens, 17 ... Pipe, 18, 19, 20 ... Wire bond, 21 ... Metal base, 22 ... Package, 51 ... Light receiving element of prior art example, 52 ... Sub carrier of prior art example,
53 ... Amplifying element of prior art example, 54 ... HI of prior art example
C, 55 ... Optical fiber of prior art example, 56 ... Lens of prior art example, 57 ... Pipe of prior art example, 58 ... Metal plate of prior art example, 59 ... Metal base of prior art example, 60 ... Conventional art example Package.
Claims (1)
換された微弱な信号をS/N劣化なく増幅する少なくと
も1個の集積回路と、該増幅集積回路の直流バイアスを
供給するためのあるいは出力信号を伝送するためのHI
C基板と、受光素子へ光信号を導くための光ファイバ及
び受光素子へ導くための光学部品から成る光受信モジュ
ールにおいて、前記受光素子を搭載するサブキャリアと
前記増幅集積回路を同一の高さになるように配置し、更
に前記増幅集積回路と前記HIC基板を同一の高さにな
るように配置することにより電気信号の接続あるいは直
流バイアス供給に使用するワイヤボンドに起因するイン
ダクタンスを抑圧できるような構造を特徴とする光受信
モジュール。1. A light-receiving element, at least one integrated circuit for amplifying a weak signal converted into an electric signal by the light-receiving element without S / N deterioration, and for supplying a DC bias of the amplification integrated circuit. HI for transmitting output signals
In a light receiving module including a C substrate, an optical fiber for guiding an optical signal to a light receiving element, and an optical component for guiding the light signal to the light receiving element, the subcarrier on which the light receiving element is mounted and the amplification integrated circuit are at the same height. By arranging so that the amplification integrated circuit and the HIC substrate are arranged at the same height, it is possible to suppress the inductance due to the wire bond used for the connection of electric signals or the DC bias supply. Optical receiver module characterized by structure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4017446A JPH05218461A (en) | 1992-02-03 | 1992-02-03 | Optical receiving module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4017446A JPH05218461A (en) | 1992-02-03 | 1992-02-03 | Optical receiving module |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05218461A true JPH05218461A (en) | 1993-08-27 |
Family
ID=11944254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4017446A Pending JPH05218461A (en) | 1992-02-03 | 1992-02-03 | Optical receiving module |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05218461A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002064212A (en) * | 2000-08-18 | 2002-02-28 | Sumitomo Electric Ind Ltd | Light receiving module |
JP2005108935A (en) * | 2003-09-29 | 2005-04-21 | Opnext Japan Inc | Optical receiving module and its manufacturing method |
JP2021044437A (en) * | 2019-09-12 | 2021-03-18 | 住友電気工業株式会社 | Light receiving device |
-
1992
- 1992-02-03 JP JP4017446A patent/JPH05218461A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002064212A (en) * | 2000-08-18 | 2002-02-28 | Sumitomo Electric Ind Ltd | Light receiving module |
JP2005108935A (en) * | 2003-09-29 | 2005-04-21 | Opnext Japan Inc | Optical receiving module and its manufacturing method |
JP2021044437A (en) * | 2019-09-12 | 2021-03-18 | 住友電気工業株式会社 | Light receiving device |
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