JP4479168B2 - Optical module - Google Patents

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Publication number
JP4479168B2
JP4479168B2 JP2003153390A JP2003153390A JP4479168B2 JP 4479168 B2 JP4479168 B2 JP 4479168B2 JP 2003153390 A JP2003153390 A JP 2003153390A JP 2003153390 A JP2003153390 A JP 2003153390A JP 4479168 B2 JP4479168 B2 JP 4479168B2
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JP
Japan
Prior art keywords
ferrite bead
terminal
bead inductor
pad
light emitting
Prior art date
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Expired - Fee Related
Application number
JP2003153390A
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Japanese (ja)
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JP2004228552A (en
Inventor
昭宏 本
智和 勝山
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP2003153390A priority Critical patent/JP4479168B2/en
Publication of JP2004228552A publication Critical patent/JP2004228552A/en
Application granted granted Critical
Publication of JP4479168B2 publication Critical patent/JP4479168B2/en
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Description

【０００１】
【発明の属する技術分野】
本発明は、光伝送システムなどに使用する高速広帯域で動作する光モジュールに関する。
【０００２】
【従来の技術】
近年、光ファイバを伝送媒体とする光伝送システムは、伝送容量が増大し、システムに用いられる光送受信器などの回路の高速広帯域化が進められている。例えば、４０Ｇｂ／ｓ光伝送システムに用いられる回路は、数十ｋＨｚから５０ＧＨｚ程度の広帯域で動作することが求められている。このような回路として、能動素子、受動素子、伝送線路を半導体基板上に一体化して、複数の機能を有する回路を集積したＭＭＩＣ（Microwave Monolithic Integrated Circuit）が知られている。また、発光素子または受光素子などの光素子と、駆動回路または増幅回路を集積したＭＭＩＣとを、１つの筐体に収めた光モジュールが知られている（例えば、特許文献１参照）。
【０００３】
図１に、従来のＭＭＩＣの構成を示す。図１（ａ）は、ＭＭＩＣの概略の回路図である。機能ＩＣ１１には電源Ｖｄｄが接続されている。電源Ｖｄｄには、電源雑音を除去するためのバイパスコンデンサＣ１が接続されている。機能ＩＣ１１は、例えば、光受信器における前置増幅器であり、高周波領域で動作する。ＭＭＩＣにおいては、機能ＩＣ１１における高周波信号が、電源ラインに雑音として侵入するのを防ぐために、電源ラインにＬＣフィルタを形成する。
【０００４】
図１（ｂ）は、ＭＭＩＣの概略の実装図である。ＬＣフィルタを形成するインダクタンス素子は、一般的に高価であり、ＭＭＩＣに比較して専有面積が大きい。そこで、電源Ｖｄｄ用の実装基板１２のパッド１３から機能ＩＣ１１までのボンディングワイヤ１４を長くして、インダクタンス成分Ｌ１を有意な値とすることが行われている。
【０００５】
図２に、従来の光送信器の構成を示す。図２（ａ）は、光送信器の概略の回路図である。駆動回路５２は、インダクタンス成分Ｌ１を介して、発光素子５１にバイアス電流を供給し、インダクタンス成分Ｌ２を介して、発光素子５１に入力された電気信号に応じた変調電流を供給する。駆動回路５２から発光素子５１に供給される変調電流の交流成分が、駆動回路５２のバイアス電流供給回路に影響を与えないように、インダクタンス成分Ｌ１を大きくしなければならない。
【０００６】
図２（ｂ）は、光送信器の概略の実装図である。インダクタンス素子は、一般的に高価であり、発光素子に比較して専有面積が大きい。そこで、発光素子５１を搭載するヒートシンク５３のパッド５４から駆動回路５２までのバイアス電流供給用のボンディングワイヤ５５を長くして、インダクタンス成分Ｌ１を大きくすることが行われている。
【０００７】
【特許文献１】
特開２００２−２７０９４２号公報（図１）
【０００８】
【発明が解決しようとする課題】
しかしながら、インダクタンス成分Ｌ１を得るために、ボンディングワイヤ１４，５５の長さが数ｃｍ必要であり実装スペースが必要であること、およびワイヤの強度不足による断線など信頼性に劣るという問題があった。また、光送信器においては、変調電流供給用のボンディングワイヤ５６も長くなるため、高周波領域における変調特性が劣化するという問題もあった。
【０００９】
そこで、フェライトビーズインダクタを用いる方法が知られている。図３に、従来のフェライトビーズインダクタを使用したＭＭＩＣの構成を示す。図３（ａ）は、ＭＭＩＣの概略の実装図である。電源Ｖｄｄ用の実装基板２１に、バイパスコンデンサＣ１とフェライトビーズインダクタＬ２とによりＬＣフィルタを構成する。図３（ｂ）は、電源ラインの等価回路である。実装基板２１において部品を搭載するためのパッド２１，２３は、裏面アースのセラミック基板では容量成分Ｃ２２，Ｃ２３を有する。例えば、比誘電率９、基板厚さ２００μｍ、パッド面積５００×２０００μｍのセラミック基板では、容量成分Ｃ２２，Ｃ２３はそれぞれ０．４ｐＦ程度である。
【００１０】
このような容量成分Ｃ２２，Ｃ２３により、フェライトビーズインダクタＬ２との間で共振が起こり、電源ラインを介して機能ＩＣ１１の出力に反映される。機能ＩＣ１１が増幅器であれば、ゲインディップとして表れ、出力波形のジッタが増加するという問題があった。
【００１１】
図４に、従来のフェライトビーズインダクタを使用した光送信器の構成を示す。図４（ａ）は、光送信器の概略の実装図である。図２（ｂ）に示したバイアス電流供給用のボンディングワイヤ５５の代わりに、フェライトビーズインダクタＬ１１を介して、発光素子５１と駆動回路５２とを接続する。図４（ｂ）は、バイアスラインの等価回路である。フェライトビーズインダクタＬ１１を搭載するためのパッド６１，６２は、裏面アースのセラミック基板では容量成分Ｃ６１，Ｃ６２を有する。
【００１２】
このような容量成分Ｃ６１，Ｃ６２と、ボンディングワイヤ６３，６４のインダクタンス成分Ｌ６３，Ｌ６４及びフェライトビーズインダクタＬ１１との間で共振が起こり、高周波領域における変調特性が劣化するという問題もあった。
【００１３】
本発明は、このような問題に鑑みてなされたもので、その目的とするところは、パッドによる容量成分を低減して、高周波特性を改善するための光モジュールを提供することにある。
【００１４】
【課題を解決するための手段】
本発明は、このような目的を達成するために、請求項１に記載の発明は、バイアス電流が供給される電極を有する発光素子と、前記バイアス電流を供給するための配線パターンが形成された配線基板と、前記配線パターンには接続されず、結線部材により前記電極と接続された端子と、前記配線パターンに接続された端子とを有し、前記配線基板に立てて実装されているインダクタ部品とを備え、前記インダクタ部品は、金メッキされた一方の面と該一方の面に対向する他方の面とを有する金属ブロックと、半田メッキされた一方の端子と他方の端子とを有するインダクタンス素子とを含み、前記金属ブロックの前記他方の面と前記インダクタンス素子の一方の端子とを接続し、前記金属ブロックの前記一方の面に前記結線部材が接続され、前記インダクタンス素子の前記他方の端子が前記配線パターンに接続されていることを特徴とする。
【００１５】
この構成によれば、インダクタ部品を接続するパッドの面積を小さくすることができ、パッドによる容量成分が小さくなり、一方の端子には、パッドを設ける必要がなく、パッドによる容量成分は生じないので、高周波特性を改善することができる。
【００２３】
【発明の実施の形態】
以下、図面を参照しながら本発明の実施形態について詳細に説明する。
図５に、本発明の一実施形態にかかるＭＭＩＣの実装構成を示す。図５（ａ）は、ＭＭＩＣの概略の実装平面図である。電源Ｖｄｄ用の実装基板３１に、バイパスコンデンサＣ１とフェライトビーズインダクタＬ３とによりＬＣフィルタを構成する。フェライトビーズインダクタＬ３は、パッド３２上に立てて実装されている。図５（ｂ）に、ＭＭＩＣの側面図を示す。フェライトビーズインダクタＬ３の一方の端子は、ボンディングワイヤ３３により、機能ＩＣ１１に接続されており、他方の端子は、パッド３２に半田付けされている。フェライトビーズインダクタＬ３の詳細は、図１２を参照して後述する。
【００２４】
このような構成により、フェライトビーズインダクタＬ３の一方の端子には、パッドを設ける必要がないので、パッドによる容量成分は生じない。
【００２５】
図６に、機能ＩＣとして構成された増幅器の入出力特性を示す。機能ＩＣ１１が４０Ｇｂ／ｓ光伝送システムに用いられる増幅器であり、ＳパラメータＳ２１を測定した結果である。図６（ａ）は、図２に示したＭＭＩＣの増幅器の入出力特性であり、周波数２ＧＨｚ付近に大きなゲインディップが認められる。図６（ｂ）は、図５に示したＭＭＩＣの増幅器の入出力特性であり、周波数２ＧＨｚ付近のゲインディップが改善されているのがわかる。フェライトビーズインダクタＬ３の一方の端子には、パッドによる容量成分がないので、共振が抑えられて、ゲインディップが減少している。４０Ｇｂ／ｓ光伝送システムにおいては、ゲインディップが２ｄＢ以下であることが要求されており、本実施形態により、その要求を満たすことができる。
【００２６】
図７に、本発明の一実施形態にかかるＭＭＩＣの応用例を示す。機能ＩＣの電源ラインに挿入されるＬＣフィルタとして説明したが、以下のような応用例にも適用することができる。図７（ａ）は、機能ＩＣ１１の出力端子に設けられたバイアスＴ回路に適用した実装平面図である。バイアスＴ回路は、機能ＩＣ１１の出力端子の直流電位を所定の電位に設定するための回路であり、電源ＶｄｄからフェライトビーズインダクタＬ３を介して電位が与えられる。容量素子Ｃ４２は、直流成分を阻止し、機能ＩＣ１１の出力端子からの交流成分のみを出力する。
【００２７】
図７（ｂ）は、機能ＩＣ１１の入力端子に設けられたバイアスＴ回路に適用した実装平面図である。バイアスＴ回路は、図７（ａ）の場合と同様の機能を有する。フェライトビーズインダクタＬ３は、パッド４１上に立てて実装されおり、一方の端子のパッドによる容量成分がなくなるので、ゲインディップを改善することができる。
【００２８】
図８に、本発明の第１の実施形態にかかる光送信器の構成を示す。図８（ａ）は、光送信器の概略の実装平面図である。フェライトビーズインダクタＬ１２を介して、発光素子５１と駆動回路５２とを接続する。フェライトビーズインダクタＬ１２は、パッド７１上に立てて実装されている。図８（ｂ）に、光送信器の側面図を示す。フェライトビーズインダクタＬ１２一方の端子は、ボンディングワイヤ７２により、発光素子５１に接続されており、他方の端子は、パッド７１に半田付けされている。このような構成により、駆動回路５２は、発光素子５１に対して、ボンディングワイヤ７３、フェライトビーズインダクタＬ１２およびボンディングワイヤ７２を介してバイアス電流を供給する。フェライトビーズインダクタＬ１２の一方の端子には、パッドを設ける必要がないので、パッドによる容量成分は生じないため、高周波領域における変調特性を改善することができる。また、フェライトビーズインダクタのインダクタンス成分は、ボンディングワイヤのインダクタンス成分よりはるかに大きいので、ボンディングワイヤ５６を介して発光素子５１に供給される変調電流の交流成分が、駆動回路５２のバイアス電流供給回路に影響を与えることはない。
【００２９】
図９に、本発明の一実施形態にかかる発光素子モジュールの構成を示す。図９（ａ）は、発光素子モジュールの概略の実装図である。発光素子５１と駆動回路とは、配線パターン７４，７５を介して接続されている。フェライトビーズインダクタＬ１２は、パッド７１上に立てて実装されている。フェライトビーズインダクタＬ１２の一方の端子は、ボンディングワイヤ７２により、パッド５４を介して発光素子５１に接続され、他方の端子は、パッド７１に半田付けされ、ボンディングワイヤ７３を介して配線パターン７５に接続されている。配線パターン７４は、パッド５４を介して発光素子５１に接続されている。駆動回路は、発光素子５１に対して、配線パターン７４を介して変調電流を供給し、配線パターン７５を介してバイアス電流を供給する。
【００３０】
図９（ｂ）は、バイアスラインの等価回路である。フェライトビーズインダクタＬ１２を搭載するためのパッド７１は、裏面アースのセラミック基板では容量成分Ｃ７１を有する。フェライトビーズインダクタＬ１２の一方の端子には、パッドを設ける必要がないので、パッドによる容量成分は生じない。
【００３１】
ここで、バイアス用のボンディングワイヤ７２によるインダクタンス成分Ｌ７２と、フェライトビーズインダクタＬ１２により、高周波ノイズを阻止することができ、発光素子５１とフェライトビーズインダクタＬ１２との間に容量成分が存在しないので、共振も生じないため、高周波領域における変調特性を改善することができる。
【００３２】
図１０に、光送信器の出力特性を示す。図１０（ａ）は、比較のために図２（ｂ）に示した光送信器の出力特性であり、図１０（ｂ）は、図８（ａ）に示した光送信器の出力特性である。図１０（ｂ）は、図１０（ａ）と比較してアイパターンの開口部が大きく、高周波領域における変調特性が改善されていることがわかる。
【００３３】
図１１に、本発明の第２の実施形態にかかる光送信器の構成を示す。図１１（ａ）は、光送信器の概略の実装平面図である。光送信器は、発光素子５１を搭載するヒートシンク５３と、駆動回路ＩＣ８２を搭載する配線基板８１とから構成されている。発光素子５１と駆動回路ＩＣ８２のバイアス電流供給回路とは、ボンディングワイヤ８３と、フェライトビーズインダクタＬ１２とを介して接続される。フェライトビーズインダクタＬ１２は、パッド８４上に立てて実装されている。一方、発光素子５１と駆動回路ＩＣ８２の変調電流供給回路とは、ボンディングワイヤ８６とパッド８５とを介して接続される。
【００３４】
図１１（ｂ）に、光送信器の側面図を示す。フェライトビーズインダクタＬ１２の一方の端子は、ボンディングワイヤ８３により、パッド５４を介して発光素子５１の電極に接続されており、他方の端子は、配線基板８１に形成された配線パターンであるパッド８４に半田付けされている。このような構成により、駆動回路ＩＣ８２は、発光素子５１に対して、バイアス電流を供給する。フェライトビーズインダクタＬ１２の一方の端子には、パッドを設ける必要がないので、パッドによる容量成分は生じないため、高周波領域における変調特性を改善することができる。
【００３５】
一方、発光素子５１に対する変調電流は、ボンディングワイヤ８６とパッド８５とを介して供給されるので、ボンディングワイヤ８６の長さを短くすることができる。また、パッド８５の面積を小さくすることにより、配線基板８１の裏面アースとの間で形成される容量を小さくすることができるので、高周波特性を損なうことがない。
【００３６】
図１２は、本発明の第１の実施形態にかかるフェライトビーズインダクタの製造方法を説明するための図である。フェライトビーズインダクタ１０１の端子は、半田接続を行うために半田メッキが付されている。このままでは、ボンディングワイヤを接続することができないので、一方の面１２１を金メッキし、他方の面１２２を半田メッキした金属ブロック１０２を、フェライトビーズインダクタ１０１の一方の端子に接続する。このようにして、フェライトビーズインダクタの一方の端子は、金属ブロック１０２を介してボンディングワイヤを接続することができ、他方の端子は、パッドに半田付けすることができる。
【００３７】
フェライトビーズインダクタ１０１と金属ブロック１０２との接続は、フェライトビーズインダクタ１０１の一方の端子に半田クリーム１１１を塗布して、Ｖ字溝を有する接続治具１３１に載せる。フェライトビーズインダクタ１０１の一方の端子と金属ブロック１０２の他方の面１２２とを対向させて載せる（図１２（ａ）参照）。さらに、接続治具１３１の上から抑え板１３２により、フェライトビーズインダクタ１０１と金属ブロック１０２とを固定し（図１２（ｂ）参照）、接続治具１３１を加熱して両者を接続する。
【００３８】
また、表面を金メッキした金属ブロック１０２を、フェライトビーズインダクタ１０１の一方の端子に接続してもよい。
【００３９】
図１３は、本発明の第２の実施形態にかかるフェライトビーズインダクタの製造方法を説明するための図である。ダイボンダーを使用して、フェライトビーズインダクタ１０１の端子に、表面を金メッキした金属ブロック１４１ａを取り付ける（図１３（ａ））。フェライトビーズインダクタ１０１をダイボンダーのコレット１５２に、真空吸着させて固定し、金属ブロック１４１ａをダイボンダーのステージ１５１に固定する。予め３２０℃程度に昇温したステージ１５１上に、半田ペレット１４２を搭載した金属ブロック１４１ａを載置する。ステージ１５１を昇温してあるので、半田ペレット１４２は直ぐに溶融するが、雰囲気を窒素雰囲気に保つことで、半田の酸化を防ぐことができる。
【００４０】
コレット１５２に吸着されたフェライトビーズインダクタ１０１を、金属ブロック１４１ａに押しつけた状態で、ステージ１５１を降温することで、フェライトビーズインダクタ１０１と金属ブロック１４１ａとを接着する。同様にして、フェライトビーズインダクタ１０１の他方の端子にも、金属ブロック１４１ｂを接着する（図１３（ｂ））。
【００４１】
このようにして、フェライトビーズインダクタの端子に、金属ブロック１４１を接着することにより、端子が金以外の金属であっても、ボンディングワイヤを接続することができる。また、フェライトビーズインダクタの他方の端子にも金属ブロックを接着することにより、フェライトビーズインダクタと基板上のパッドとの接続に、半田ペーストまたは導電性樹脂を用いることができる。なお、金属ブロックは、表面を金メッキしたコバールまたは銅などの一般的な金属を用いることができる。
【００４２】
なお、本実施形態では、フェライトビーズインダクタを用いたが、他のチップ部品を用いてもよい。一般的なチップ部品の端子は、半田接続を行うために半田メッキ、いわゆるＳｎ／Ｐｂメッキが付されている。また、Ｐｂフリー化のためにＳｎメッキが付されていることもある。従って、上述した方法により、金属ブロックを取り付けてもよいし、金メッキ端子または銀パラジウム端子を有するチップ部品を使用してもよい。また、結線部材であるボンディングワイヤは、金ワイヤに限らず、アルミワイヤ、銅線でも構わないし、ボンディングリボンであっても構わない。
【００４３】
さらに、機能ＩＣは、光伝送システムの光受信器に用いられる前置増幅器、主増幅器などのほか、進行波型増幅器などにも適用できる。その他、上述したバイアスＴ回路と同様に、インダクタを介して直流を供給する回路であれば、いずれにも適用できる。
【００４４】
【発明の効果】
以上説明したように、本発明によれば、インダクタンス素子の２つの端子のうち、一方の端子には、パッドを設ける必要がなく、パッドによる容量成分が生じないので、高周波特性を改善することが可能となる。
【００４５】
また、本発明によれば、上述したインダクタンス素子を用いて、ＬＣフィルタ、ＩＣの電源供給回路、またはバイアスＴ回路を構成することにより、これら回路の高周波特性を改善することが可能となる。
【００４６】
さらに、本発明によれば、上述したインダクタンス素子を用いて、光モジュールを構成することにより、高周波領域における変調特性を改善することが可能となる。
【図面の簡単な説明】
【図１】従来のＭＭＩＣの構成を示す図である。
【図２】従来の光送信器の構成を示す図である。
【図３】従来のフェライトビーズインダクタを使用したＭＭＩＣの構成を示す図である。
【図４】従来のフェライトビーズインダクタを使用した光送信器の構成を示す図である。
【図５】本発明の一実施形態にかかるＭＭＩＣの構成を示す実装図である。
【図６】機能ＩＣとして構成された増幅器の入出力特性を示す図である。
【図７】本発明の一実施形態にかかるＭＭＩＣの応用例を示す実装図である。
【図８】本発明の第１の実施形態にかかる光送信器の構成を示す実装図である。
【図９】本発明の一実施形態にかかる発光素子モジュールの構成を示す図である。
【図１０】光送信器の出力特性を示す図である。
【図１１】本発明の第２の実施形態にかかる光送信器の構成を示す実装図である。
【図１２】本発明の第１の実施形態にかかるフェライトビーズインダクタの製造方法を説明するための図である。
【図１３】本発明の第２の実施形態にかかるフェライトビーズインダクタの製造方法を説明するための図である。
【符号の説明】
１１ 機能ＩＣ
１２，２１，３１ 実装基板
１３，２２，２３，３２，４１，５４，６１，６２ パッド
１４，３３，５５，５６，６３，６４ ボンディングワイヤ
５１ 発光素子
５２ 駆動回路
５３ ヒートシンク
１０１ フェライトビーズインダクタ
１０２，１４１ 金属ブロック
１１１ 半田クリーム
１３１ 接続治具
１３２ 抑え板
１４２ 半田
１５１ ステージ
１５２ コレット[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an optical module that operates in a high-speed and wide band used in an optical transmission system or the like.
[0002]
[Prior art]
In recent years, an optical transmission system using an optical fiber as a transmission medium has an increased transmission capacity, and high-speed broadband circuits such as an optical transceiver used in the system have been promoted. For example, a circuit used in a 40 Gb / s optical transmission system is required to operate in a wide band of about several tens of kHz to 50 GHz. As such a circuit, an MMIC (Microwave Monolithic Integrated Circuit) in which an active element, a passive element, and a transmission line are integrated on a semiconductor substrate and a circuit having a plurality of functions is integrated is known. An optical module in which an optical element such as a light-emitting element or a light-receiving element and an MMIC in which a drive circuit or an amplifier circuit is integrated is housed in one housing is known (for example, see Patent Document 1).
[0003]
FIG. 1 shows a configuration of a conventional MMIC. FIG. 1A is a schematic circuit diagram of the MMIC. A power supply Vdd is connected to the function IC 11. A bypass capacitor C1 for removing power supply noise is connected to the power supply Vdd. The function IC 11 is a preamplifier in an optical receiver, for example, and operates in a high frequency region. In the MMIC, an LC filter is formed in the power supply line in order to prevent the high frequency signal in the functional IC 11 from entering the power supply line as noise.
[0004]
FIG. 1B is a schematic mounting diagram of the MMIC. The inductance element forming the LC filter is generally expensive and has a large area as compared with the MMIC. Therefore, the bonding wire 14 from the pad 13 of the mounting substrate 12 for the power supply Vdd to the functional IC 11 is lengthened to make the inductance component L1 a significant value.
[0005]
FIG. 2 shows a configuration of a conventional optical transmitter. FIG. 2A is a schematic circuit diagram of the optical transmitter. The drive circuit 52 supplies a bias current to the light emitting element 51 via the inductance component L1, and supplies a modulation current corresponding to the electric signal input to the light emitting element 51 via the inductance component L2. The inductance component L1 must be increased so that the alternating current component of the modulation current supplied from the drive circuit 52 to the light emitting element 51 does not affect the bias current supply circuit of the drive circuit 52.
[0006]
FIG. 2B is a schematic mounting diagram of the optical transmitter. Inductance elements are generally expensive and have a large occupied area compared to light emitting elements. Therefore, the inductance component L1 is increased by lengthening the bonding current 55 for supplying bias current from the pad 54 of the heat sink 53 on which the light emitting element 51 is mounted to the drive circuit 52.
[0007]
[Patent Document 1]
Japanese Patent Laid-Open No. 2002-270942 (FIG. 1)
[0008]
[Problems to be solved by the invention]
However, in order to obtain the inductance component L1, there are problems that the length of the bonding wires 14 and 55 is several centimeters and a mounting space is required, and the reliability is inferior such as disconnection due to insufficient strength of the wires. Further, in the optical transmitter, since the bonding wire 56 for supplying the modulation current becomes long, there is a problem that the modulation characteristic in the high frequency region is deteriorated.
[0009]
Therefore, a method using a ferrite bead inductor is known. FIG. 3 shows the configuration of an MMIC using a conventional ferrite bead inductor. FIG. 3A is a schematic mounting diagram of the MMIC. An LC filter is configured on the mounting substrate 21 for the power supply Vdd by the bypass capacitor C1 and the ferrite bead inductor L2. FIG. 3B is an equivalent circuit of the power supply line. The pads 21 and 23 for mounting components on the mounting substrate 21 have capacitance components C22 and C23 on the back-grounded ceramic substrate. For example, in a ceramic substrate having a relative dielectric constant of 9, a substrate thickness of 200 μm, and a pad area of 500 × 2000 μm, the capacitance components C22 and C23 are about 0.4 pF, respectively.
[0010]
Due to such capacitance components C22 and C23, resonance occurs with the ferrite bead inductor L2, which is reflected in the output of the functional IC 11 through the power supply line. If the function IC 11 is an amplifier, it appears as a gain dip, and there is a problem that jitter of the output waveform increases.
[0011]
FIG. 4 shows a configuration of an optical transmitter using a conventional ferrite bead inductor. FIG. 4A is a schematic mounting diagram of an optical transmitter. Instead of the bias current supply bonding wire 55 shown in FIG. 2B, the light emitting element 51 and the drive circuit 52 are connected via a ferrite bead inductor L11. FIG. 4B is an equivalent circuit of the bias line. The pads 61 and 62 for mounting the ferrite bead inductor L11 have capacitance components C61 and C62 in the ceramic substrate with the back ground.
[0012]
There is also a problem that resonance occurs between the capacitance components C61 and C62, the inductance components L63 and L64 of the bonding wires 63 and 64, and the ferrite bead inductor L11, and the modulation characteristics in the high frequency region deteriorate.
[0013]
The present invention has been made in view of such problems, and an object of the present invention is to provide an optical module for reducing high-frequency characteristics by reducing capacitance components due to pads.
[0014]
[Means for Solving the Problems]
In order to achieve the above object, according to the present invention, a light emitting element having an electrode to which a bias current is supplied and a wiring pattern for supplying the bias current are formed. a wiring board, not connected to the wiring pattern, and connected pin and the electrode by connecting members, have a connection to a pin on the wiring pattern, that is implemented upright on the circuit board An inductor component, wherein the inductor component has a metal block having one surface plated with gold and the other surface opposite to the one surface, one terminal plated with solder and the other terminal Including the element, connecting the other surface of the metal block and one terminal of the inductance element, the connection member is connected to the one surface of the metal block, The other terminal of the serial inductance element is characterized in that it is connected to the wiring pattern.
[0015]
According to this configuration, the area of the pad connecting the inductor component can be reduced, the capacitance component due to the pad is reduced, and it is not necessary to provide a pad at one terminal, and the capacitance component due to the pad does not occur. High frequency characteristics can be improved.
[0023]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 5 shows a mounting configuration of the MMIC according to an embodiment of the present invention. FIG. 5A is a schematic mounting plan view of the MMIC. An LC filter is configured by the bypass capacitor C1 and the ferrite bead inductor L3 on the mounting substrate 31 for the power supply Vdd. The ferrite bead inductor L3 is mounted upright on the pad 32. FIG. 5B shows a side view of the MMIC. One terminal of the ferrite bead inductor L3 is connected to the functional IC 11 by a bonding wire 33, and the other terminal is soldered to the pad 32. Details of the ferrite bead inductor L3 will be described later with reference to FIG.
[0024]
With such a configuration, it is not necessary to provide a pad at one terminal of the ferrite bead inductor L3, so that no capacitive component is generated by the pad.
[0025]
FIG. 6 shows input / output characteristics of an amplifier configured as a functional IC. The functional IC 11 is an amplifier used in the 40 Gb / s optical transmission system, and is a result of measuring the S parameter S21. FIG. 6A shows input / output characteristics of the amplifier of the MMIC shown in FIG. 2, and a large gain dip is recognized near the frequency of 2 GHz. FIG. 6B shows input / output characteristics of the amplifier of the MMIC shown in FIG. 5, and it can be seen that the gain dip in the vicinity of the frequency of 2 GHz is improved. Since one terminal of the ferrite bead inductor L3 has no capacitance component due to the pad, resonance is suppressed and the gain dip is reduced. In the 40 Gb / s optical transmission system, the gain dip is required to be 2 dB or less, and this requirement can be satisfied by this embodiment.
[0026]
FIG. 7 shows an application example of the MMIC according to an embodiment of the present invention. Although described as an LC filter inserted into a power supply line of a functional IC, the present invention can also be applied to the following application examples. FIG. 7A is a mounting plan view applied to a bias T circuit provided at the output terminal of the functional IC 11. The bias T circuit is a circuit for setting the DC potential of the output terminal of the function IC 11 to a predetermined potential, and is given a potential from the power supply Vdd via the ferrite bead inductor L3. The capacitive element C42 blocks the direct current component and outputs only the alternating current component from the output terminal of the function IC 11.
[0027]
FIG. 7B is a mounting plan view applied to a bias T circuit provided at the input terminal of the functional IC 11. The bias T circuit has a function similar to that in the case of FIG. The ferrite bead inductor L3 is mounted upright on the pad 41, and since there is no capacitance component due to the pad of one terminal, the gain dip can be improved.
[0028]
FIG. 8 shows the configuration of the optical transmitter according to the first embodiment of the present invention. FIG. 8A is a schematic mounting plan view of the optical transmitter. The light emitting element 51 and the drive circuit 52 are connected via the ferrite bead inductor L12. The ferrite bead inductor L12 is mounted upright on the pad 71. FIG. 8B shows a side view of the optical transmitter. One terminal of the ferrite bead inductor L12 is connected to the light emitting element 51 by a bonding wire 72, and the other terminal is soldered to the pad 71. With such a configuration, the drive circuit 52 supplies a bias current to the light emitting element 51 via the bonding wire 73, the ferrite bead inductor L 12, and the bonding wire 72. Since it is not necessary to provide a pad at one terminal of the ferrite bead inductor L12, a capacitance component due to the pad does not occur, so that modulation characteristics in a high frequency region can be improved. Further, since the inductance component of the ferrite bead inductor is much larger than the inductance component of the bonding wire, the AC component of the modulation current supplied to the light emitting element 51 via the bonding wire 56 is supplied to the bias current supply circuit of the drive circuit 52. There is no impact.
[0029]
FIG. 9 shows a configuration of a light emitting element module according to an embodiment of the present invention. FIG. 9A is a schematic mounting diagram of the light emitting element module. The light emitting element 51 and the drive circuit are connected via wiring patterns 74 and 75. The ferrite bead inductor L12 is mounted upright on the pad 71. One terminal of the ferrite bead inductor L12 is connected to the light emitting element 51 via the pad 54 by the bonding wire 72, and the other terminal is soldered to the pad 71 and connected to the wiring pattern 75 via the bonding wire 73. Has been. The wiring pattern 74 is connected to the light emitting element 51 through the pad 54. The drive circuit supplies a modulation current to the light emitting element 51 via the wiring pattern 74 and supplies a bias current via the wiring pattern 75.
[0030]
FIG. 9B is an equivalent circuit of the bias line. The pad 71 on which the ferrite bead inductor L12 is mounted has a capacitance component C71 in the back-grounded ceramic substrate. Since it is not necessary to provide a pad at one terminal of the ferrite bead inductor L12, no capacitance component is generated by the pad.
[0031]
Here, high frequency noise can be blocked by the inductance component L72 by the bonding wire 72 for bias and the ferrite bead inductor L12, and there is no capacitance component between the light emitting element 51 and the ferrite bead inductor L12. Therefore, the modulation characteristic in the high frequency region can be improved.
[0032]
FIG. 10 shows the output characteristics of the optical transmitter. 10 (a) shows the output characteristics of the optical transmitter shown in FIG. 2 (b) for comparison, and FIG. 10 (b) shows the output characteristics of the optical transmitter shown in FIG. 8 (a). is there. FIG. 10B shows that the eye pattern opening is larger than that in FIG. 10A, and the modulation characteristics in the high frequency region are improved.
[0033]
FIG. 11 shows a configuration of an optical transmitter according to the second embodiment of the present invention. FIG. 11A is a schematic mounting plan view of the optical transmitter. The optical transmitter includes a heat sink 53 on which the light emitting element 51 is mounted, and a wiring board 81 on which a drive circuit IC 82 is mounted. The light emitting element 51 and the bias current supply circuit of the drive circuit IC 82 are connected via a bonding wire 83 and a ferrite bead inductor L12. The ferrite bead inductor L12 is mounted upright on the pad 84. On the other hand, the light emitting element 51 and the modulation current supply circuit of the drive circuit IC 82 are connected via a bonding wire 86 and a pad 85.
[0034]
FIG. 11B shows a side view of the optical transmitter. One terminal of the ferrite bead inductor L12 is connected to the electrode of the light emitting element 51 via a pad 54 by a bonding wire 83, and the other terminal is connected to a pad 84 which is a wiring pattern formed on the wiring board 81. Soldered. With such a configuration, the drive circuit IC 82 supplies a bias current to the light emitting element 51. Since it is not necessary to provide a pad at one terminal of the ferrite bead inductor L12, a capacitance component due to the pad does not occur, so that modulation characteristics in a high frequency region can be improved.
[0035]
On the other hand, since the modulation current for the light emitting element 51 is supplied via the bonding wire 86 and the pad 85, the length of the bonding wire 86 can be shortened. Further, by reducing the area of the pad 85, the capacitance formed between the wiring substrate 81 and the back surface ground can be reduced, so that the high frequency characteristics are not impaired.
[0036]
FIG. 12 is a view for explaining the method of manufacturing the ferrite bead inductor according to the first embodiment of the present invention. The terminals of the ferrite bead inductor 101 are solder-plated for solder connection. Since the bonding wire cannot be connected as it is, the metal block 102 having one surface 121 plated with gold and the other surface 122 solder-plated is connected to one terminal of the ferrite bead inductor 101. In this way, one terminal of the ferrite bead inductor can be connected to the bonding wire via the metal block 102, and the other terminal can be soldered to the pad.
[0037]
The ferrite bead inductor 101 and the metal block 102 are connected by applying the solder cream 111 to one terminal of the ferrite bead inductor 101 and placing it on the connection jig 131 having a V-shaped groove. One terminal of the ferrite bead inductor 101 and the other surface 122 of the metal block 102 are placed facing each other (see FIG. 12A). Further, the ferrite bead inductor 101 and the metal block 102 are fixed by the holding plate 132 from above the connection jig 131 (see FIG. 12B), and the connection jig 131 is heated to connect them.
[0038]
Further, the metal block 102 whose surface is gold-plated may be connected to one terminal of the ferrite bead inductor 101.
[0039]
FIG. 13 is a diagram for explaining a method of manufacturing a ferrite bead inductor according to the second embodiment of the present invention. A metal block 141a whose surface is gold-plated is attached to the terminal of the ferrite bead inductor 101 using a die bonder (FIG. 13A). The ferrite bead inductor 101 is fixed to the collet 152 of the die bonder by vacuum suction, and the metal block 141a is fixed to the stage 151 of the die bonder. A metal block 141 a on which solder pellets 142 are mounted is placed on a stage 151 that has been heated to about 320 ° C. in advance. Since the temperature of the stage 151 has been raised, the solder pellet 142 is immediately melted, but by maintaining the atmosphere in a nitrogen atmosphere, the solder can be prevented from being oxidized.
[0040]
With the ferrite bead inductor 101 adsorbed by the collet 152 pressed against the metal block 141a, the temperature of the stage 151 is lowered to bond the ferrite bead inductor 101 and the metal block 141a. Similarly, the metal block 141b is bonded to the other terminal of the ferrite bead inductor 101 (FIG. 13B).
[0041]
Thus, by bonding the metal block 141 to the terminal of the ferrite bead inductor, the bonding wire can be connected even if the terminal is a metal other than gold. Further, by bonding a metal block to the other terminal of the ferrite bead inductor, a solder paste or a conductive resin can be used to connect the ferrite bead inductor and the pad on the substrate. For the metal block, a general metal such as Kovar or copper whose surface is gold-plated can be used.
[0042]
In this embodiment, the ferrite bead inductor is used, but other chip components may be used. Terminals of general chip parts are subjected to solder plating, so-called Sn / Pb plating, for solder connection. In addition, Sn plating may be applied to make Pb free. Therefore, a metal block may be attached by the method described above, or a chip component having a gold plated terminal or a silver palladium terminal may be used. Further, the bonding wire as the connecting member is not limited to the gold wire, and may be an aluminum wire, a copper wire, or a bonding ribbon.
[0043]
Furthermore, the functional IC can be applied to a traveling wave amplifier as well as a preamplifier and a main amplifier used in an optical receiver of an optical transmission system. In addition, as with the above-described bias T circuit, any circuit that supplies direct current via an inductor can be applied.
[0044]
【The invention's effect】
As described above, according to the present invention, one of the two terminals of the inductance element does not need to be provided with a pad, and no capacitive component is generated by the pad, so that high frequency characteristics can be improved. It becomes possible.
[0045]
Further, according to the present invention, the high frequency characteristics of these circuits can be improved by configuring an LC filter, an IC power supply circuit, or a bias T circuit using the inductance elements described above.
[0046]
Furthermore, according to the present invention, it is possible to improve modulation characteristics in a high frequency region by configuring an optical module using the above-described inductance element.
[Brief description of the drawings]
FIG. 1 is a diagram showing a configuration of a conventional MMIC.
FIG. 2 is a diagram illustrating a configuration of a conventional optical transmitter.
FIG. 3 is a diagram showing a configuration of an MMIC using a conventional ferrite bead inductor.
FIG. 4 is a diagram showing a configuration of an optical transmitter using a conventional ferrite bead inductor.
FIG. 5 is a mounting diagram showing a configuration of an MMIC according to an embodiment of the present invention.
FIG. 6 is a diagram showing input / output characteristics of an amplifier configured as a functional IC.
FIG. 7 is a mounting diagram showing an application example of the MMIC according to the embodiment of the present invention.
FIG. 8 is a mounting diagram showing the configuration of the optical transmitter according to the first embodiment of the present invention;
FIG. 9 is a diagram showing a configuration of a light emitting element module according to an embodiment of the present invention.
FIG. 10 is a diagram illustrating output characteristics of an optical transmitter.
FIG. 11 is a mounting diagram showing a configuration of an optical transmitter according to a second embodiment of the present invention.
FIG. 12 is a drawing for explaining the manufacturing method of the ferrite bead inductor according to the first embodiment of the present invention.
FIG. 13 is a drawing for explaining the manufacturing method of the ferrite bead inductor according to the second embodiment of the present invention.
[Explanation of symbols]
11 Function IC
12, 21, 31 Mounting substrate 13, 22, 23, 32, 41, 54, 61, 62 Pad 14, 33, 55, 56, 63, 64 Bonding wire 51 Light emitting element 52 Drive circuit 53 Heat sink 101 Ferrite bead inductor 102, 141 Metal Block 111 Solder Cream 131 Connection Jig 132 Holding Plate 142 Solder 151 Stage 152 Collet

Claims (1)

バイアス電流が供給される電極を有する発光素子と、
前記バイアス電流を供給するための配線パターンが形成された配線基板と、
前記配線パターンには接続されず、結線部材により前記電極と接続された端子と、前記配線パターンに接続された端子とを有し、前記配線基板に立てて実装されているインダクタ部品とを備え、
前記インダクタ部品は、金メッキされた一方の面と該一方の面に対向する他方の面とを有する金属ブロックと、半田メッキされた一方の端子と他方の端子とを有するインダクタンス素子とを含み、前記金属ブロックの前記他方の面と前記インダクタンス素子の一方の端子とを接続し、前記金属ブロックの前記一方の面に前記結線部材が接続され、前記インダクタンス素子の前記他方の端子が前記配線パターンに接続されていることを特徴とする光モジュール。A light emitting element having an electrode to which a bias current is supplied;
A wiring board on which a wiring pattern for supplying the bias current is formed;
Wherein not connected to the wiring pattern, and has been pin connected to the electrode by connecting members, have a connection to a pin on the wiring pattern, and the inductor component that is mounted standing on the wiring substrate Prepared,
The inductor component includes a metal block having one surface plated with gold and the other surface facing the one surface, and an inductance element having one terminal plated with solder and the other terminal, The other surface of the metal block is connected to one terminal of the inductance element, the connection member is connected to the one surface of the metal block, and the other terminal of the inductance element is connected to the wiring pattern An optical module characterized by being made .
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WO2006077639A1 (en) * 2005-01-20 2006-07-27 Fujitsu Limited Optical module
JP2007096272A (en) 2005-09-02 2007-04-12 Sanyo Electric Co Ltd Electric device and electric circuit
US8027146B2 (en) 2005-12-26 2011-09-27 Sanyo Electric Co., Ltd. Electric circuit device enabling impedance reduction
US9543940B2 (en) * 2014-07-03 2017-01-10 Transphorm Inc. Switching circuits having ferrite beads
WO2024101141A1 (en) * 2022-11-11 2024-05-16 ローム株式会社 Electronic component and semiconductor device

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