JPH05218130A - Tab type semiconductor device and manufacturing device therefor - Google Patents

Abstract

PURPOSE:To prevent a short-circuit and a decrease in a withstand voltage due to contact with a semiconductor pellet with longer inner lead in a TAB type semiconductor device having bump electrodes arranged in a zigzag manner. CONSTITUTION:A TAB type semiconductor device 20 has a semiconductor pellet 1 disposed in a through hole 2 of an insulation film 3 and long and short inner leads 15A, 15B extended from the film 3 connected at the ends to bump electrodes 14A, 14B formed in a zigzag manner on the surface. The height of the outer electrode 14A is formed higher than that of the inner electrode 14B, and a recess step 17 to be engaged with the longer lead 15B is formed correspondingly along the peripheral edge of a lead pressing surface of a bonding tool 16.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a TAB type semiconductor device and a manufacturing apparatus therefor, and more particularly, it connects a bump electrode of a semiconductor pellet arranged in a through hole of an insulating film and a tip of an inner lead extending from the insulating film. The present invention relates to a TAB type semiconductor device and a TAB type semiconductor device manufacturing apparatus equipped with a bonding tool for collectively thermocompression bonding the bump electrode of the semiconductor pellet and the tip of the inner lead.

[0002]

2. Description of the Related Art TAB [Tape Automated Bonding]
The semiconductor device (10) is used, for example, in a camera IC or the like mounted on a flexible film-shaped printed circuit board or the like. An example thereof will be described with reference to FIGS. 3 to 5.

In FIGS. 3A and 3B, (1) is a semiconductor pellet, (3) is a frame-shaped film made of an insulating film, (2) is a through hole formed in the frame-shaped film (3),
(4A) and (4B) are bump electrodes formed in a staggered arrangement on the wiring pattern of the semiconductor pellet (1) by pile-up plating of Au, and (5A) and (5B) are metal formed on the frame-shaped film (3). It is an inner lead made of foil. The inner leads (5A) (5B) have different lengths corresponding to the zigzag-shaped bump electrodes (4A) (4B), and the intermediate portion is bonded to the frame-shaped film (3). At the tip of each inner lead (5A) (5B) with bump electrode (4A)
The semiconductor pellet (1) is fixedly supported inside the frame film (3) by thermocompression bonding to (4B).

In the TAB type semiconductor device (10), the number of bump electrodes (4A) and (4B) tends to increase due to the improvement in the degree of integration in the semiconductor pellet (1).
As described above, the bump electrodes (4A) and (4B) are arranged in a staggered pattern. In manufacturing the TAB semiconductor device (10), as shown in FIG. 4, the bump electrode (4A) is used.
(4B) are collectively thermocompression bonded to the tips of the corresponding inner leads (5A) (5B) by using a block-shaped bonding tool (6).

[0005]

By the way, the above-mentioned TAB
In manufacturing the semiconductor device (10), a bonding tool (6) having a flat heating and pressing surface is used as shown in FIG. On the other hand, bump electrodes (4A) arranged in a staggered pattern
When the tips of inner leads (5A) (5B) are attached to (4B) by thermocompression bonding to the corresponding bump electrodes (4A) (4B), the tips of the inner leads (5A) (5B) have different lengths. Therefore, the pressure receiving area by the bonding tool (6) at the tip of the longer inner lead (5B) extending on the inner bump electrode (4B) and the resulting thermal expansion are short on the outer bump electrode (4A). It is larger than the inner lead (5A). As a result, the tips of the longer inner leads (5B) are deformed and easily come into contact with the wiring pattern formed on the surface of the semiconductor pellet (1), which causes problems such as short circuit and reduction in withstand voltage.

[0006]

As a means for solving the above problems, in a TAB type semiconductor device according to the present invention, semiconductor pellets are arranged in the through holes of an insulating film, and are formed in a zigzag pattern on the periphery of the surface. In the one in which the tip end portion of the inner lead extending from above the insulating film is connected to the plurality of bump electrodes, the outer bump electrode is made higher than the inner bump electrode among the plurality of bump electrodes.

In the TAB type semiconductor device manufacturing apparatus according to the present invention, the tips of the inner leads having different lengths corresponding to the bump electrodes are collectively heated to the bump electrodes on the outer side of the semiconductor pellet. It is characterized in that a bonding tool for crimping is provided, and a concave step portion is formed along the periphery of the lead pressing surface.

[0008]

According to the present invention, the outer bump electrode is made higher than the inner bump electrode, and the concave step portion is formed along the periphery of the lead pressing surface of the bonding tool. When the tips of the inner leads are collectively thermocompressed to each other, the longer inner leads extending toward the inner bump electrodes are positioned in the concave stepped portion, so that the longer inner leads are formed on the surface of the semiconductor pellet. Prevents contact with the peripheral edge.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. 1 and 2A and 2B. In the following description, the same components as those of FIGS. 3 to 5 showing the conventional technique are denoted by the same reference numerals, and the description of the overlapping matters will be omitted.

The TAB type semiconductor device (20) comprises a semiconductor pellet (1) having bump electrodes (14A) and (14B) arranged in a staggered pattern on the surface and a frame-shaped film (3), and inner leads of different lengths. (15A) (15B) and the bump electrodes (14A) (14
Although it was joined and integrated by thermocompression bonding with B),
As shown in the enlarged view of FIG. 1, the tip of the shorter inner lead (15A) is thermo-compressed to the outer bump electrode (14A).
The height of Au plating is adjusted so that the height of A) is higher than that of the inner bump electrode (14B) to which the tip of the longer inner lead (15B) is thermocompression bonded.

On the other hand, a concave step portion (17) is formed along the peripheral edge of the lead pressing surface on the side of the bonding tool (16) corresponding to the height difference between the bump electrodes (14A) and (14B). To do. As shown in the enlarged view of FIG. 1, when the bonding tool (16) presses the inner leads (15A) (15B) to transfer the heat energy for thermocompression bonding, the inner side of the frame film (3) The inner lead (15B), which is longer than the bump electrode (14B), is located inside the concave step (17) and is separated from the heating and pressing surface of the bonding tool (16). A state in which the pressing force and thermal energy from the bonding tool (16) are not transmitted to the leads (15B) is created. That is, the pressing force and the thermal energy from the bonding tool (16) are transferred only to the tips of the long and short inner leads (15A) (15B) which are thermocompression bonded to the bump electrodes (14A) (14B) having different heights. A state is created, and thereby, at the time of bonding, a substantially equal thermocompression bonding condition is created at the tip of the longer inner lead (15B) and the tip of the shorter inner lead (15A). As a result, the deformation of the longer inner lead (15B) is suppressed, and both inner leads (15A) (15A)
The tip end of B) is thermocompression bonded together on the corresponding bump electrodes (14A) (14B).

[0012]

According to the present invention, the deformation of the longer inner lead which is thermocompression-bonded to the inner bump electrode is suppressed, so that the TAB having a large number of bump electrodes arranged in a staggered pattern is formed.
In the semiconductor device, it is possible to avoid a short circuit, a decrease in withstand voltage, etc. due to the contact of the inner lead with the semiconductor pellet, to significantly improve the product yield, and to provide a high-quality TAB semiconductor device.

[Brief description of drawings]

FIG. 1 is a partially enlarged cross-sectional view showing a bonding tool of a TAB type semiconductor device and a manufacturing apparatus therefor according to the present invention.

2A is a front view showing the bonding tool shown in FIG. 1, and FIG. 2B is a bottom view showing the bonding tool shown in FIG.

3A is a plan view showing a conventional TAB type semiconductor device, and FIG. 3B is a sectional view showing the TAB type semiconductor device of FIG. 3A.

FIG. 4 is a partially enlarged sectional view showing a conventional TAB semiconductor device.

5A is a front view showing the bonding tool shown in FIG. 4, and FIG. 5B is a bottom view showing the bonding tool shown in FIG.

[Explanation of symbols]

 1 Semiconductor pellet 2 Through hole 3 Frame film 14A Bump electrode 14B Bump electrode 15A Inner lead 15B Inner lead 16 Bonding tool 17 Recessed step 20 TAB type semiconductor device

Claims (2)

[Claims] 1. A structure in which a semiconductor pellet is arranged in a through hole of an insulating film, and a plurality of bump electrodes formed in a zigzag pattern on the peripheral edge of the surface are connected to the tips of inner leads extending from the insulating film. Among the plurality of bump electrodes, an outer bump electrode is made higher than an inner bump electrode, and a TAB type semiconductor device is provided. 2. The semiconductor pellet according to claim 1, wherein an outer bump electrode is provided with a bonding tool for collectively thermocompressing the tips of inner leads having different lengths corresponding to the bump electrodes. An apparatus for manufacturing a TAB type semiconductor device, characterized in that a concave step portion is formed along the periphery of the lead pressing surface.