JPH05218008A - Manufacture of polyimide resin film pattern - Google Patents
Manufacture of polyimide resin film patternInfo
- Publication number
- JPH05218008A JPH05218008A JP4018932A JP1893292A JPH05218008A JP H05218008 A JPH05218008 A JP H05218008A JP 4018932 A JP4018932 A JP 4018932A JP 1893292 A JP1893292 A JP 1893292A JP H05218008 A JPH05218008 A JP H05218008A
- Authority
- JP
- Japan
- Prior art keywords
- resin film
- polyimide resin
- positive resist
- film
- polyimide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Paints Or Removers (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はポリイミド系樹脂膜パタ
ーンの製造法、さらに詳しくは半導体素子などの表面を
保護するためのポリイミド系樹脂膜パターンの製造法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a polyimide resin film pattern, and more particularly to a method for producing a polyimide resin film pattern for protecting the surface of a semiconductor device or the like.
【０００２】[0002]
【従来の技術】従来、半導体などの各種電子部品の表面
保護膜や層間絶縁膜としてポリイミド樹脂が用いられて
いる。このポリイミド樹脂は、ＰＳＧ、ＳｉＯ2、Ｓｉ
Ｎなどの無機絶縁膜に比較して凹凸の大きい基板上に平
坦な膜を形成できるとともに、１μｍ以上の厚い膜を容
易に形成でき、さらに他の有機材料に比較して耐熱性が
高いなどの利点を有するため、バイポーラＩＣの層間絶
縁膜に採用され、最近ではメモリー素子のα線遮蔽膜や
バッファーコート膜として幅広く用いられている。これ
らの用途にポリイミド樹脂膜を適用するに当たっては、
スピニング法などにより半導体基板であるウエハ上に形
成されたポリイミド樹脂膜にスルーホールなどのパター
ンを形成する必要があり、該パターンは、フォトレジス
トを介したウェットエッチング工程などにより形成され
ている。パターンの形成法としては、（１）２２０〜３
５０℃で熱処理したポリイミド樹脂膜上に、マスク材と
してネガレジストパターンを形成した後、ヒドラジン系
溶液を用いてパターン化する方法、（２）１１０〜１６
０℃で熱処理したポリイミド樹脂膜上に、マスク材とし
てポジレジスト膜を形成し、アルカリ性水溶液を用いて
レジストと同時にパターン化する方法などが知られてい
る。2. Description of the Related Art Conventionally, a polyimide resin has been used as a surface protective film or an interlayer insulating film for various electronic parts such as semiconductors. This polyimide resin is made of PSG, SiO 2 , Si
For example, it is possible to form a flat film on a substrate having larger irregularities than an inorganic insulating film such as N, easily form a thick film of 1 μm or more, and have higher heat resistance than other organic materials. Because of its advantages, it has been adopted as an interlayer insulating film for bipolar ICs, and has recently been widely used as an α-ray shielding film and a buffer coat film for memory devices. In applying the polyimide resin film to these applications,
It is necessary to form a pattern such as a through hole in a polyimide resin film formed on a wafer which is a semiconductor substrate by a spinning method or the like, and the pattern is formed by a wet etching process using a photoresist. The pattern forming method includes (1) 220 to 3
A method of forming a negative resist pattern as a mask material on a polyimide resin film heat-treated at 50 ° C. and then patterning with a hydrazine-based solution, (2) 110 to 16
A method is known in which a positive resist film is formed as a mask material on a polyimide resin film that has been heat-treated at 0 ° C., and an alkaline aqueous solution is used to pattern the resist and the resist at the same time.
【０００３】しかし、近年、半導体業界では有機溶剤使
用の規制および半導体の生産工程時間の短縮化が図られ
ているため、（１）の方法ではヒドラジン系溶液、フェ
ノール系レジスト剥離液を多量に用いるという欠点があ
り、またネガレジスト膜をパターン化した後、ポリイミ
ド樹脂膜のパターン化が行われるため（２）の方法に比
べ生産工程が長いという欠点がある。このため、最近で
は有機溶剤をほとんど使用せず、また（１）に比べてポ
リイミド樹脂膜のエッチング時間が短い（２）の方法が
ポリイミド系樹脂膜パターン形成の主流になっている。However, in recent years, in the semiconductor industry, since the use of organic solvents is regulated and the semiconductor production process time is shortened, a large amount of hydrazine type solution and phenol type resist stripping solution are used in the method (1). In addition, since the negative resin film is patterned and then the polyimide resin film is patterned, the production process is longer than that of the method (2). For this reason, recently, the method (2), which uses almost no organic solvent and has a shorter etching time of the polyimide resin film as compared with (1), has become the mainstream for forming the polyimide resin film pattern.
【０００４】しかしながら、（２）の方法でポリイミド
樹脂膜にパターン形成する場合、（ａ）ポジレジスト剥
離後の１６０〜３５０℃の熱処理でポリイミド樹脂膜の
パターンエッヂ部に極度な盛り上がりが生じる、（ｂ）
レジスト剥離液である酢酸−ｎ−ブチル、エチルセロソ
ルブアセテート、メチルエチルケトンなどの有機系溶剤
を用いてレジスト膜を剥離除去するとポリイミド樹脂膜
のパターンエッヂ部などにひだ状の皮張り（スカム）が
生じるなどの問題がある。特にパターン化するポリイミ
ド樹脂膜の膜厚が厚くなるほど上記（ａ）、（ｂ）の問
題は大きくなる。However, when the pattern is formed on the polyimide resin film by the method (2), (a) heat treatment at 160 to 350 ° C. after peeling the positive resist causes extreme swelling in the pattern edge portion of the polyimide resin film. b)
When the resist film is stripped and removed using an organic solvent such as resist stripping liquid-n-butyl acetate, ethyl cellosolve acetate, methyl ethyl ketone, etc., pleated skin (scum) occurs on the pattern edge part of the polyimide resin film, etc. There is a problem. In particular, the thicker the polyimide resin film to be patterned, the greater the problems (a) and (b).
【０００５】[0005]
【発明が解決しようとする課題】本発明は、前記の従来
技術の問題を解決し、ポリイミド系樹脂膜のパターンエ
ッヂ部の膜盛り上がり、スカムが発生しないポジレジス
トを用いたポリイミド系樹脂膜パターンの製造法を提供
するものである。DISCLOSURE OF THE INVENTION The present invention solves the above-mentioned problems of the prior art by forming a polyimide-based resin film pattern using a positive resist that does not cause film swelling or scumming in the pattern edge portion of the polyimide-based resin film. It provides a manufacturing method.
【０００６】[0006]
【課題を解決するための手段】本発明は、有機四塩基酸
二無水物成分とジアミン成分とを有機溶剤中で反応させ
て得られるポリアミド酸溶液を基板上に塗布し、熱処理
してポリイミド系樹脂膜を形成し、ポジレジストをマス
ク材にしてポリイミド系樹脂膜をエッチング加工した
後、ポジレジストを有機系溶剤ついでアルカリ水溶液を
用いて剥離するポリイミド系樹脂膜パターンの製造法に
関する。According to the present invention, a polyamic acid solution obtained by reacting an organic tetrabasic acid dianhydride component and a diamine component in an organic solvent is coated on a substrate and heat-treated to form a polyimide system. The present invention relates to a method for producing a polyimide resin film pattern in which a resin film is formed, a polyimide resin film is etched using a positive resist as a mask material, and then the positive resist is peeled off using an organic solvent and then an alkaline aqueous solution.
【０００７】本発明に用いられるポリアミド酸溶液は、
例えばＮ−メチル−２−ピロリドン、Ｎ，Ｎ−ジメチル
アセトアミド、Ｎ，Ｎ−ジメチルホルムアミド等の有機
溶剤中に、４，４′−ジアミノジフェニルエーテルなど
のジアミン成分を溶解させ、次に３，３′，４，４′−
ベンゾフェノンテトラカルボン酸二無水物などの有機四
塩基酸二無水物成分を加えて５０℃以下、より好ましく
は室温付近またはそれ以下の温度で撹拌、反応させて得
られる。ポリイミド系樹脂膜は上記ポリアミド酸溶液を
５０〜８０℃の温度で撹拌して使用上適切な粘度に調整
した後、例えば半導体基板上にスピニング塗布し、ホッ
トプレート、温風式乾燥器等で１００〜３５０℃の範囲
の温度で３時間以内で熱処理し、脱水閉環して得られ
る。ポリアミド酸溶液の市販品としては、例えばＰＩ
Ｑ、ＰＩＸ（日立化成工業社製商品名）等が挙げられ
る。The polyamic acid solution used in the present invention is
For example, a diamine component such as 4,4′-diaminodiphenyl ether is dissolved in an organic solvent such as N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, and then 3,3 ′. , 4, 4'-
It can be obtained by adding an organic tetrabasic acid dianhydride component such as benzophenone tetracarboxylic acid dianhydride and stirring and reacting at a temperature of 50 ° C. or lower, more preferably around room temperature or lower. The polyimide-based resin film is prepared by stirring the above polyamic acid solution at a temperature of 50 to 80 ° C. to adjust the viscosity to an appropriate value for use, and then spin-coating it on, for example, a semiconductor substrate, and applying a hot plate, a hot air drier, etc. It is obtained by heat-treating at a temperature in the range of ˜350 ° C. for 3 hours or less and dehydration ring closure. Examples of commercially available polyamic acid solutions include PI
Q, PIX (trade name of Hitachi Chemical Co., Ltd.) and the like.
【０００８】本発明に用いられるポジレジストとしては
特に制限はなく、例えばノボラック樹脂とナフトキノン
ジアジド混合物が用いられ、例えばＯＦＰＲ−８００
（東京応化工業社製商品名）、ＲＧ−８０１８Ｐ（日立
化成工業社製商品名）等が挙げられる。The positive resist used in the present invention is not particularly limited and, for example, a mixture of novolac resin and naphthoquinonediazide is used, and for example, OFPR-800.
(Trade name of Tokyo Ohka Kogyo Co., Ltd.), RG-8018P (trade name of Hitachi Chemical Co., Ltd.) and the like.
【０００９】ポジレジスト膜は、ポリイミド系樹脂膜上
にポジレジストを例えばスピニング塗布し、ホットプレ
ート上で１１０℃で１２０秒以内で熱処理して得られ
る。本発明におけるエッチング加工は、例えばポジレジ
スト膜を露光処理後に、アルカリ現像液を用いてパドル
法でポジレジスト膜の現像と連続して行われる。The positive resist film is obtained by, for example, spin-coating a positive resist on a polyimide resin film and heat-treating it on a hot plate at 110 ° C. for 120 seconds or less. The etching process in the present invention is carried out, for example, after the positive resist film is exposed to light, continuously with the development of the positive resist film by the paddle method using an alkali developing solution.
【００１０】本発明に用いられるアルカリ水溶液として
は、水酸化テトラメチルアンモニウム水溶液（ＮＭＤ−
３：東京応化工業社製）などが挙げられ、有機系溶剤と
しては、酢酸ｎ−ブチル、エチルセロソルブアセテー
ト、メチルエチルケトンなどが挙げられる。アルカリ水
溶液の濃度は特に制限されないが、ポリイミド系樹脂膜
の表面溶解などから０．３〜６．０重量％の範囲が好ま
しい。The alkaline aqueous solution used in the present invention is a tetramethylammonium hydroxide aqueous solution (NMD-
3: manufactured by Tokyo Ohka Kogyo Co., Ltd.), and examples of the organic solvent include n-butyl acetate, ethyl cellosolve acetate, and methyl ethyl ketone. The concentration of the alkaline aqueous solution is not particularly limited, but is preferably in the range of 0.3 to 6.0% by weight due to surface dissolution of the polyimide resin film.
【００１１】図１ａ〜ｃは、本発明の一実施例を示すポ
リイミド系樹脂膜パターンの製造法の説明図である。図
において、半導体基板１上に所定形状に形成されたアル
ミニウム（Ａｌ）からなる配線層２の一部が、シリコン
酸化膜からなる無機絶縁層３（いわゆるパッシベーショ
ン膜）に露出して電極（ボンディングパッド）を形成
し、この半導体ウエハにポリイミド系樹脂膜４が積層さ
れる。このポリイミド系樹脂膜４は、半導体ウエハ上に
ポリアミド酸溶液をスピニング塗布し、熱処理により溶
媒を除去し、脱水閉環して形成される。このポリイミド
系樹脂膜上４にフェノールノボラック系のポジレジスト
層５がスピニング塗布により形成される（ａ）。次にフ
ォトマスク６を介して露光した後、公知の写真食刻技術
によりアルカリ水溶液でポジレジスト層５の現像とポリ
イミド系樹脂膜上４のエッチングを行い、所定部分にパ
ターン７が形成され、Ａｌボンディングパッド部８が露
出される（ｂ）。さらに、ポジレジスト層５が有機系溶
剤ついでアルカリ水溶液で剥離される（ｃ）。剥離に際
しては、パドル法、スプレー法等が行われる。このポリ
イミド系樹脂膜上４からなる表面保護膜は、図１ａ〜ｃ
の工程で水分吸収があった場合、またはイミド化が充分
でない場合には、１００〜３５０℃の温度で３時間以下
の熱処理が行われる。1A to 1C are explanatory views of a method for manufacturing a polyimide resin film pattern showing an embodiment of the present invention. In the figure, a part of a wiring layer 2 made of aluminum (Al) formed in a predetermined shape on a semiconductor substrate 1 is exposed at an inorganic insulating layer 3 (so-called passivation film) made of a silicon oxide film to form an electrode (bonding pad). ) Is formed, and the polyimide resin film 4 is laminated on this semiconductor wafer. This polyimide resin film 4 is formed by spin-coating a polyamic acid solution on a semiconductor wafer, removing the solvent by heat treatment, and dehydrating and ring-closing. A phenol novolac-based positive resist layer 5 is formed on the polyimide-based resin film 4 by spinning coating (a). Next, after exposure through the photomask 6, the positive resist layer 5 is developed with an alkaline aqueous solution and the polyimide resin film 4 is etched by a known photo-etching technique to form a pattern 7 on a predetermined portion. The bonding pad portion 8 is exposed (b). Further, the positive resist layer 5 is stripped with an organic solvent and then an alkaline aqueous solution (c). For peeling, a paddle method, a spray method, or the like is performed. The surface protective film composed of this polyimide-based resin film 4 is shown in FIGS.
If there is water absorption in the step (1) or if imidization is insufficient, heat treatment is performed at a temperature of 100 to 350 ° C. for 3 hours or less.
【００１２】[0012]
【実施例】以下、本発明を実施例により具体的に説明す
る。 実施例１ ４，４′−ジアミノジフェニルエーテル５４．０５ｇ
（０．２７モル）および１，３−ビス（アミノプロピ
ル）テトラメチルジシロキサン７．４５ｇ（０．０３モ
ル）をＮ−メチル−２−ピロリドン８００ｇ中でよく撹
拌溶解させ、３，３′，４，４′−ベンゾフェノンテト
ラカルボン酸二無水物４８．３３ｇ（０．１５モル）お
よびピロメリット酸二無水物３２．７１ｇ（０．１５モ
ル）を徐々に加え、室温で６時間反応後、８０℃で１０
時間撹拌して粘度７５ポアズ（２５℃）、樹脂分濃度１
８．６重量％のポリアミド酸溶液を得た。この溶液を、
図１ａの工程において、Ａｌ配線層２および無機絶縁膜
（Ｐ−Ｓｉ3Ｎ4）層３が形成された半導体基板１上に、
２０００ｒｐｍで３０秒間スピニング塗布した後、ホッ
トプレートで１００℃で６０秒間、さらに１３０℃で６
０秒間熱処理（プリベーク）し、１６μｍ厚のポリイミ
ド系樹脂膜層４からなる表面保護膜を形成した。次に該
層４上にフェノールノボラック樹脂系の感光性樹脂（ポ
ジ型フォトレジスト、ＯＦＰＲ−５０００：東京応化工
業社製商品名）を回転数１２００ｒｐｍで３０秒間スピ
ニング塗布し、ポジレジスト層５を形成した。次に図１
ｂの工程において、保護膜層４の所定部分であるボンデ
ィングパツド部およびスクライブラインのみを選択的に
除去するため、スルホール寸法１００μｍ四角およびス
クライブライン幅寸法７０μｍのフォトマスク６を介し
て公知の写真食刻技術により露光した後、水酸化テトラ
メチルアンモニウム水溶液系の現像液ＮＭＤ−３、（濃
度２．３８重量％、東京応化工業社製商品名）を食刻液
に用いて２３℃で１００秒間パドル法により、ポジレジ
スト層５の現像とポリイミド系樹脂膜層４のエッチング
を同時に行い、ポリイミド系樹脂膜４にパターン部７を
形成し、Ａｌ配線層２であるボンディングパツド部８
（１３０×１３０μｍ）の一部を露出させた。このポリ
イミド系樹脂膜層４のパターン部７の無機絶縁膜（Ｐ−
Ｓｉ3Ｎ4）層３上の底部寸法は１００×１００μｍのサ
イズであった。次にポジレジスト層５のみを食刻する酢
酸−ｎ−ブチルでパドル法により室温下で９０秒間処理
し、剥離、ついで、さらに濃度１．２重量％の水酸化テ
トラメチルアンモニウム水溶液でパドル法により２３℃
で２５秒間処理してポジレジスト層を剥離した。次に温
風式乾燥器に投入し、２００℃で３０分間、次いで３５
０℃で６０分間熱処理し、膜厚１０μｍのポリイミド系
樹脂膜からなる表面保護膜をウエハ上に形成した
（ｃ）。この表面保護膜は、膜減りも殆んどなく、パタ
ーンエッヂ部の膜盛り上がりが緩和され、皮張り状のス
カムも見られず良好なスルーホールパターン形状であっ
た。EXAMPLES The present invention will be specifically described below with reference to examples. Example 1 54.05 g of 4,4'-diaminodiphenyl ether
(0.27 mol) and 1,3-bis (aminopropyl) tetramethyldisiloxane 7.45 g (0.03 mol) were dissolved in 800 g of N-methyl-2-pyrrolidone with stirring to give 3,3 ', After 48.33 g (0.15 mol) of 4,4'-benzophenone tetracarboxylic acid dianhydride and 32.71 g (0.15 mol) of pyromellitic dianhydride were gradually added, and after reacting at room temperature for 6 hours, 80 10 at ℃
Viscosity 75 poise (25 ° C) with stirring for 1 hour, resin content concentration 1
A 8.6 wt% polyamic acid solution was obtained. This solution
In the step of FIG. 1a, on the semiconductor substrate 1 on which the Al wiring layer 2 and the inorganic insulating film (P—Si 3 N 4 ) layer 3 are formed,
Spin coating at 2000 rpm for 30 seconds, then hot plate at 100 ° C for 60 seconds, then 130 ° C for 6 seconds.
A heat treatment (pre-baking) was performed for 0 seconds to form a surface protective film made of a polyimide resin film layer 4 having a thickness of 16 μm. Next, a phenol novolac resin-based photosensitive resin (positive photoresist, OFPR-5000: trade name manufactured by Tokyo Ohka Kogyo Co., Ltd.) was spin-coated on the layer 4 at a rotation speed of 1200 rpm for 30 seconds to form a positive resist layer 5. did. Next in FIG.
In step b), in order to selectively remove only the bonding pad portion and the scribe line, which are predetermined portions of the protective film layer 4, a known photo is taken through a photomask 6 having a through hole size of 100 μm square and a scribe line width size of 70 μm. After exposure by an etching technique, tetramethylammonium hydroxide aqueous solution type developer NMD-3 (concentration 2.38% by weight, manufactured by Tokyo Ohka Kogyo Co., Ltd.) is used as an etching solution at 23 ° C. for 100 seconds. By the paddle method, the positive resist layer 5 is developed and the polyimide resin film layer 4 is simultaneously etched to form a pattern portion 7 on the polyimide resin film 4, and a bonding pad portion 8 that is an Al wiring layer 2 is formed.
A part of (130 × 130 μm) was exposed. The inorganic insulating film (P-
The bottom dimension on the Si 3 N 4 ) layer 3 was 100 × 100 μm in size. Then, only the positive resist layer 5 is etched with -n-butyl acetate for 90 seconds at room temperature by a paddle method, stripped, and then with a 1.2% by weight aqueous solution of tetramethylammonium hydroxide by a paddle method. 23 ° C
For 25 seconds to remove the positive resist layer. Then, put in a hot air dryer, and at 200 ℃ for 30 minutes, then 35
A heat treatment was carried out at 0 ° C. for 60 minutes to form a surface protective film made of a polyimide resin film having a film thickness of 10 μm on the wafer (c). The surface protective film had almost no film loss, the film swelling in the pattern edge portion was alleviated, and no skin-like scum was observed.
【００１３】実施例２ 実施例１で酢酸−ｎ−ブチルでレジスト剥離除去したポ
リイミド系樹脂膜層４をホットプレートで１５０℃で９
０秒間熱処理し、ＮＭＤ−３でパドル法により２３℃で
２０秒間処理してポジレジスト層を剥離してポリイミド
系樹脂膜からなる表面保護膜を得た。この表面保護膜
は、実施例１と同様良好なスルーホールパターン形状で
あった。Example 2 The polyimide resin film layer 4 from which the resist was removed by stripping with n-butyl acetate in Example 1 was heated at 150 ° C. for 9 minutes on a hot plate.
It was heat-treated for 0 seconds and treated with NMD-3 at 23 ° C. for 20 seconds by a paddle method to peel off the positive resist layer to obtain a surface protective film made of a polyimide resin film. This surface protective film had a good through-hole pattern shape as in Example 1.
【００１４】実施例３ 実施例１において、濃度５重量％のトリエチルアミン水
溶液でパドル法により２３℃で３０秒間剥離した以外は
実施例１と同様にし、ポリイミド系樹脂膜４からなる表
面保護膜を得た。この表面保護膜は、実施例１と同様良
好なスルーホールパターン形状であった。Example 3 A surface protective film comprising a polyimide resin film 4 was obtained in the same manner as in Example 1 except that a 5% by weight aqueous solution of triethylamine was used for peeling at 23 ° C. for 30 seconds. It was This surface protective film had a good through-hole pattern shape as in Example 1.
【００１５】比較例１ 実施例１において、ポジレジスト層をＮＭＤ−３でパド
ル法により２３℃で１５秒間剥離した以外は実施例１と
同様にし、ポリイミド系樹脂膜４を得たが、ＮＭＤ−３
での剥離時にポリイミド系樹脂膜４の膜溶解が生じ、良
好なスルーホールパターンを形成することができなかっ
た。Comparative Example 1 A polyimide resin film 4 was obtained in the same manner as in Example 1 except that the positive resist layer was stripped by NMD-3 by the paddle method at 23 ° C. for 15 seconds. Three
At the time of peeling, the polyimide-based resin film 4 was dissolved, and a good through-hole pattern could not be formed.
【００１６】比較例２ 実施例１において、水酸化テトラメチルアンモニウム水
溶液で剥離処理せずにポリイミド系樹脂膜４のパターン
形成した以外は実施例１と同様にして表面保護膜を形成
したが、Ａｌボンディングパッド部表面の一部にスカム
が見られ、またパターンエッヂ部に２μｍ厚の膜盛り上
がりが見られた。Comparative Example 2 A surface protective film was formed in the same manner as in Example 1 except that the polyimide-based resin film 4 was patterned without peeling treatment with an aqueous tetramethylammonium hydroxide solution. Scum was observed on a part of the surface of the bonding pad, and a 2 μm thick film was observed on the pattern edge.
【００１７】[0017]
【発明の効果】本発明のパターン製造法によれば、ポジ
レジスト剥離後にスカムが生じることがなく、ポジレジ
ストを使用したパターン製造に際してパターン形状が良
好なポリイミド系樹脂膜を形成することができる。According to the pattern manufacturing method of the present invention, scum does not occur after the positive resist is peeled off, and a polyimide-based resin film having a good pattern shape can be formed in the pattern manufacturing using the positive resist.
【図１】本発明の一実施例になるポリイミド系樹脂膜パ
ターンの製造工程説明図である。FIG. 1 is an explanatory diagram of a manufacturing process of a polyimide resin film pattern according to an embodiment of the present invention.
１ 半導体基板 ２ Ａｌ配線層 ３ 無機絶縁膜層 ４ ポリイミド系樹脂膜（保護膜） ５ ポジレジスト層 ６ フォトマスク ７ パターン部 ８ ボンディングパッド部 1 semiconductor substrate 2 Al wiring layer 3 inorganic insulating film layer 4 polyimide resin film (protective film) 5 positive resist layer 6 photomask 7 pattern part 8 bonding pad part
Claims (1)
分とを有機溶剤中で反応させて得られるポリアミド酸溶
液を基板上に塗布し、熱処理してポリイミド系樹脂膜を
形成し、ポジレジストをマスク材にしてポリイミド系樹
脂膜をエツチング加工した後、ポジレジストを有機系溶
剤ついでアルカリ水溶液を用いて剥離することを特徴と
するポリイミド系樹脂膜パターンの製造法。1. A polyimide resin film is formed by applying a polyamic acid solution obtained by reacting an organic tetrabasic acid dianhydride component and a diamine component in an organic solvent on a substrate and heat-treating to form a polyimide resin film. Is used as a mask material to etch the polyimide resin film, and then the positive resist is peeled off using an organic solvent and then an alkaline aqueous solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4018932A JPH05218008A (en) | 1992-02-04 | 1992-02-04 | Manufacture of polyimide resin film pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4018932A JPH05218008A (en) | 1992-02-04 | 1992-02-04 | Manufacture of polyimide resin film pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05218008A true JPH05218008A (en) | 1993-08-27 |
Family
ID=11985415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4018932A Pending JPH05218008A (en) | 1992-02-04 | 1992-02-04 | Manufacture of polyimide resin film pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05218008A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5955779A (en) * | 1994-05-24 | 1999-09-21 | Hitachi Chemical Company, Ltd. | Method of forming resin film of desired pattern on semiconductor substrate, semiconductor chip, semiconductor package, and resist image remover |
| JP2008244447A (en) * | 2007-02-26 | 2008-10-09 | Semiconductor Energy Lab Co Ltd | Methods for manufacturing insulating film and semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63155582U (en) * | 1987-03-27 | 1988-10-12 |
-
1992
- 1992-02-04 JP JP4018932A patent/JPH05218008A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63155582U (en) * | 1987-03-27 | 1988-10-12 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5955779A (en) * | 1994-05-24 | 1999-09-21 | Hitachi Chemical Company, Ltd. | Method of forming resin film of desired pattern on semiconductor substrate, semiconductor chip, semiconductor package, and resist image remover |
| US5958653A (en) * | 1994-05-24 | 1999-09-28 | Hitachi Chemical Company, Ltd. | Method of forming resin film of desired pattern on semiconductor substrate, semiconductor chip, semiconductor package |
| JP2008244447A (en) * | 2007-02-26 | 2008-10-09 | Semiconductor Energy Lab Co Ltd | Methods for manufacturing insulating film and semiconductor device |
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