JPH0521556A - Semiconductor device and measuring method therefor - Google Patents

Abstract

PURPOSE:To measure in a noncontact manner the electric continuity between an electrode and a protruding electrode, by a method wherein a current is made to flow from a first sprit electrode to a second split electrode via the protruding electrode, by controlling a power supply potential side switch, an earth potential side switch and a control switch. CONSTITUTION:A power supply potential side switch 3 and a control switch are controlled to be in an electrically continuous state. An earth potential side switch 4 is controlled to be in an electrically discontinuous state. At this time, a current flowing from the outside of an IC through a power supply potential 1 is measured. The current flowing into the IC through the power supply potential line 1 reaches a first split electrode 11a after passing the power supply potential side switch 3. The current surely passes a protruding electrode 7, reaches a second split electrode 11b, and then flows into a control switch 5. This current is compared with an expectation predicted from the function of an IC. Thereby the electric continuity between the first split electrode 11a and the protruding electrode 7 and the electric continuity between the second split electrode 11b and the protruding electrode 7 can be confirmed to be excellent.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a semiconductor integrated circuit, and more particularly to a structure of a protruding electrode formed on the semiconductor integrated circuit and a measuring method thereof.

[0002]

2. Description of the Related Art The structure of a bump electrode formed on a conventional semiconductor integrated circuit (hereinafter also referred to as an IC) and its inspection method will be described with reference to FIG.

In general, IC inspection is performed using a prober device. When inspecting an IC using this prober device, a signal input from the outside of the IC
A predetermined process is performed inside, and the potential output to the electrode 6 is
Electrode 6 or protruding electrode 7 formed on this electrode 6
In addition, the measurement is performed by stylus. As a result,
By comparing the expected value and the output predicted in advance by the IC function, the good product and the defective product of the IC are selected.

In the above-described measuring method, all the electrodes 6 or all the protruding electrodes 7 are used as the inspection needles of the prober device.
You have to feel it. Therefore, when the semiconductor integrated circuit is highly integrated and the number of the electrodes 6 increases, the semiconductor integrated circuit becomes huge and the inspection becomes complicated.

If the inspection can be performed in a non-contact manner without directly contacting the electrode 6 or the protruding electrode 7, the area occupied by the electrode 6 or the protruding electrode 7 can be significantly reduced. The chip area of the semiconductor integrated circuit can be reduced, and the inspection can be simplified.

The structure of the semiconductor integrated circuit shown in FIG.
The structure is such that the quality of can be inspected without contacting the electrode 6 or the protruding electrode 7. Ie electrode 6
Includes a power supply potential side switch 3 and a ground potential side switch 4
And a control switch 5 for outputting an intermediate potential between the power supply potential and the ground potential.

The power supply potential line 1, the ground potential line 2, and the intermediate potential line 8 are respectively connected to power supply electrodes (not shown) for supplying power to the IC.

By controlling the power supply potential side switch 3, the ground potential side switch 4, and the control switch 5 in an appropriate combination, the IC can be inspected in a non-contact manner. The inspection method performed without contacting the electrode 6 or the protruding electrode 7 without directly contacting the needle will be described below.

That is, the power source potential side switch 3 and the control switch 5 are brought into conduction, and the ground potential side switch 4
Control to a non-conducting state. At this time, the current flowing from the outside of the IC through the power supply potential line 1 is measured. By comparing this current with an expected value predicted in advance from the function of the IC, it can be confirmed that the power supply potential side switch 3 and the control switch 5 can be correctly controlled to be in the conductive state and that the conductive resistance is normal.

Similarly, the normal operation of the ground potential side switch 4 can be confirmed by making the ground potential side switch 4 and the control switch 5 conductive and the power source potential side switch 3 non-conductive.

On the other hand, the power supply potential side switch 3 and the ground potential side switch 4 are controlled to be non-conductive, and the control switch 5 is controlled to be conductive. At this time, the current flowing out of the IC through the intermediate potential line 8 is measured, and this current is measured by the IC.
It is possible to confirm that the power supply potential side switch 3 and the ground potential side switch 4 can be correctly controlled to be in the non-conducting state by comparing with the expected value predicted in advance from the function of (1) and there is no short circuit failure.

Similarly, the power supply potential side switch 3 and the ground potential side switch 4 are brought into conduction, and the control switch 5
The normal operation of the control switch 5 can be confirmed by turning off the switch.

[0013]

In the structure of the semiconductor device described with reference to FIG. 2, the quality of the IC is inspected without directly contacting the electrode 6 or the protruding electrode 7 formed on the electrode 6 with the needle. It is possible to do.

The protruding electrode 7 is used for electrical connection between the IC and a circuit board on which the IC is mounted. That is, the electric signal generated from the inside of the IC is transmitted from the electrode 6 to the circuit board via the protruding electrode 7.

Although the electrodes 6 can be formed consistently during the IC manufacturing process, the protruding electrodes 7 are formed on the electrodes 6 of the completed IC.
It is formed by a plating method or a vacuum evaporation method. Therefore, it is necessary to inspect the electrical continuity between the electrode 6 and the protruding electrode 7. In the conventional structure shown in FIG. 2, the electrode 6 and the protruding electrode 7 are provided.
Can only be the same potential as
The current flowing into the electrode 6 via the ground potential side switch 4 and the control switch 5 does not flow into the protruding electrode 7.

In order to measure the electric current flowing into the protruding electrode 7, there is no method other than touching the protruding electrode 7 with an inspection needle of the prober device. Therefore, in the structure of the conventional semiconductor device, the electrical continuity between the electrode 6 and the protruding electrode 7 cannot be inspected in a non-contact manner.

An object of the present invention is to solve the above problems and provide a structure of a semiconductor integrated circuit capable of measuring the electrical conductivity between an electrode and a protruding electrode in a non-contact manner, and a measuring method.

[0018]

In order to achieve the above object, the present invention adopts the constitution and measuring method described below.

The semiconductor device according to the present invention includes a first divided electrode, a second divided electrode, the first divided electrode and the second divided electrode.
A divided electrode, a protruding electrode provided on the upper surface of the divided electrode, a power supply potential side switch and a ground potential side switch connected to the first divided electrode, and a control switch connected to the second divided electrode.

The measuring method of the semiconductor device according to the present invention is as follows.
By controlling the switch on the power supply potential side, the switch on the ground potential side, and the control switch, a current is caused to flow from the first split electrode to the second split electrode via the projecting electrode, so that the projecting electrode and the first split electrode. The electrical continuity between the electrode, the protruding electrode and the second divided electrode is measured.

[0021]

Embodiment An embodiment of the present invention will be described below with reference to FIG. FIG. 1 is a sectional view showing the structure of a semiconductor device of the present invention.

The electrode is divided into a first divided electrode 11a and a second divided electrode 11b. First split electrode 11a
Is connected to the power supply potential side switch 3 and the ground potential side switch 4, and the control switch 5 is connected to the second divided electrode 11b.

First split electrode 11a and second split electrode 1
The protective film 12 provided on the layer 1b removes only the region where the bump electrode 7 is formed. Further, the protruding electrode 7 is formed so as to straddle the first divided electrode 11a and the second divided electrode 11b.

First divided electrode 11a and second divided electrode 1
The distance to 1b is made sufficiently small.
Therefore, the first divided electrode 11a and the second divided electrode 1
1b is formed on the bump electrode 7 when the first electrode
The divided electrode 11a and the second divided electrode 11b can be formed by the same method as in the case of not being divided, and can be easily formed.

First divided electrode 11a and second divided electrode 1
1b is consistently formed in the manufacturing process of the semiconductor integrated circuit. First divided electrode 11a and second divided electrode 11b
At the stage of forming and, they are spatially separated and electrically separated from each other, and the first divided electrode 11a and the second divided electrode 11b are not electrically connected.

The projecting electrodes 7 are connected to the first divided electrodes 11a and the second divided electrodes 11a.
It is formed so as to straddle the divided electrode 11b of
The first divided electrode 11a and the second divided electrode 11b can be electrically connected to each other via the protruding electrode 7.

By controlling the power supply potential side switch 3, the ground potential side switch 4, and the control switch 5 in an appropriate combination, the IC inspection can be performed in a non-contact manner. Further, it is possible to inspect the IC without contacting the electrodes and the protruding electrodes, and at the same time, between the first divided electrode 11a and the protruding electrode 7 and the second divided electrode 11
The electrical conduction state between b and the protruding electrode 7 can also be inspected without contact. This inspection method is described below.

That is, the power source potential side switch 3 and the control switch 5 are brought into conduction, and the ground potential side switch 4
Is controlled to a non-conducting state, and at that time, a current flowing from the outside of the IC through the power supply potential line 1 is measured. The current flowing into the IC through the power supply potential line 1 reaches the first divided electrode 11a through the power supply potential side switch 3, always flows through the protruding electrode 7 to the second divided electrode 11b, and then to the control switch 5. Inflow.

By comparing this current with an expected value predicted in advance from the function of the IC, the power supply potential side switch 3 and the control switch 5 can be correctly controlled to be in the conductive state, and the conductive resistance is normal. It can be confirmed that the electrical continuity between the first divided electrode 11a and the protruding electrode 7 and the second divided electrode 11b and the protruding electrode 7 is good.

In the description of FIG. 1, the electrode is divided into two, but the number of divisions of this electrode may be three or more. That is, when the electrode is divided into three, the power supply potential side switch 3 is the first divisional electrode, the ground potential side switch 4 is the second divisional electrode, and the control switch 5 is the third divisional electrode. Are connected to each other, and the protruding electrode 7
May be formed so as to straddle all of the first to third divided electrodes.

The combination of the switches connected to the divided electrodes is arbitrary, and as described with reference to FIG.
It suffices if there is a current path in which the current flowing into one of the divided electrodes always flows into the other divided electrode via the protruding electrode.

These switches can be provided exclusively for inspection, but the originally existing switches can be substituted for the functions of the semiconductor integrated circuit.

[0033]

According to the present invention, it is possible to inspect the electrical continuity between the electrode, which is the inspection terminal, and the protruding electrode, which has a role of connecting to the circuit board, in a non-contact manner. As a result, the inspection of the semiconductor integrated circuit can be greatly simplified. Further, it becomes possible to inspect the semiconductor integrated circuit without directly contacting the electrodes or the protruding electrodes. Therefore, the area occupied by the electrodes or the protruding electrodes can be significantly reduced, and the chip area of the semiconductor integrated circuit device can be reduced.

Furthermore, by applying a current to the split electrodes and the protruding electrodes by the method of the present invention, the insulating oxide film formed at the interface between the divided electrodes and the protruding electrodes is destroyed,
The conductivity between the split electrodes and the protruding electrodes is restored, and it is possible to remedy a defective conductive product.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a structure of a semiconductor device and a measuring method according to the present invention.

FIG. 2 is an explanatory diagram showing a structure and a measuring method of a conventional semiconductor device.

[Explanation of symbols]

1 Power supply potential line 2 Ground potential line 3 Power supply potential side switch 4 Ground potential side switch 5 control switch 6 electrodes 7 protruding electrode 8 Intermediate potential line 11a First split electrode 11b Second split electrode

Claims (2)

[Claims] 1. A first split electrode, a second split electrode,
A protruding electrode provided on the upper surfaces of the first divided electrode and the second divided electrode, a power supply potential side switch and a ground potential side switch connected to the first divided electrode, and a second divided electrode. A semiconductor device having a control switch. 2. The projecting electrode by controlling a switch on the power supply potential side, a switch on the ground potential side, and a control switch to cause a current to flow from the first split electrode to the second split electrode via the projecting electrode. A method for measuring a semiconductor device, comprising: measuring electrical continuity between the first divided electrode, and the protruding electrode and the second divided electrode.