JPH05211262A - Resin sealed semiconductor device - Google Patents

Resin sealed semiconductor device

Info

Publication number
JPH05211262A
JPH05211262A JP4001175A JP117592A JPH05211262A JP H05211262 A JPH05211262 A JP H05211262A JP 4001175 A JP4001175 A JP 4001175A JP 117592 A JP117592 A JP 117592A JP H05211262 A JPH05211262 A JP H05211262A
Authority
JP
Japan
Prior art keywords
resin
pellet
heat spreader
semiconductor device
resin thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP4001175A
Other languages
Japanese (ja)
Inventor
Tomotsune Sugiyama
智恒 杉山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP4001175A priority Critical patent/JPH05211262A/en
Publication of JPH05211262A publication Critical patent/JPH05211262A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To enable supply of high power consumption products in plastic packages and to reduce cracks and warps of packages by mounting a heat spreader under a pellet mount base. CONSTITUTION:Electrode pads of a pellet 3 fixed on a pellet mount base 7 are coupled with inner leads 6 by fine metal wires 2, and a heat spreader 5 is fixed on the bottom of the pellet mount base 7. A polyimide tape 4 (one sided adhesive) is stuck on the bottom of an inner lead 6 so that the heat spreader 5 may not come into contact with inner leads 6 by deformation. This step reduces thermal resistance. Uniforming (X=Y) resin thickness below and uniforming (a=b) resin thickness over the pellet 3 and resin thickness below the heat spreader 5 make a package advantageous against cracks and warps.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は樹脂封止型半導体装置に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device.

【０００２】[0002]

【従来の技術】従来の樹脂封止型半導体装置は、図３に
示すように、リードフレームのペレット搭載台７にペー
スト（接着剤）を塗布し、半導体ペレット（以下ペレッ
トと略記する）３をペレット搭載台７に固着させた後、
複数のインナーリード６とペレット３の電極パッドを金
属細線２で結線する。その後、エポキシ系樹脂１で一定
領域を封止し、アウターリードを連結するタイバーを切
り落とし、アウターリード全体の表面処理を実施する。
その後アウターリードをある一定の形状に成形し、電気
的選別後、製品として出荷される。2. Description of the Related Art In a conventional resin-sealed semiconductor device, as shown in FIG. 3, a paste (adhesive) is applied to a pellet mounting base 7 of a lead frame and a semiconductor pellet (hereinafter abbreviated as pellet) 3 is applied. After fixing to the pellet mount 7,
The plurality of inner leads 6 and the electrode pads of the pellet 3 are connected by the fine metal wires 2. Then, the epoxy resin 1 is used to seal a certain area, the tie bar connecting the outer leads is cut off, and the surface treatment of the entire outer leads is performed.
After that, the outer leads are molded into a certain shape, electrically sorted, and then shipped as a product.

【０００３】図４の例では、ペレット搭載台と同じ役割
をするヒートスプレッダー５が複数インナーリード６の
下に両面接着材を有するポリイミドテープ４を介して固
着され、前述した同じ工程を経て製品出荷に至る。In the example of FIG. 4, a heat spreader 5 having the same function as a pellet mounting table is fixed under a plurality of inner leads 6 via a polyimide tape 4 having a double-sided adhesive, and the product is shipped through the same steps as described above. Leading to.

【０００４】[0004]

【発明が解決しようとする課題】この従来の図３に示す
樹脂封止型半導体装置では、ある一定のペレットサイズ
に対するペレット搭載台部のサイズは一律に決定される
のでおのずと熱抵抗に限界が生じ、消費電力の低い製品
のみの提供となる。又、図４に示す樹脂封止型半導体装
置では、両面接着材付ポリイミドテープのコストが高く
リードフレーム全体のコストが高く製品として原価率が
悪くなるというような問題点があった。In the conventional resin-encapsulated semiconductor device shown in FIG. 3, the size of the pellet mounting base for a certain fixed pellet size is uniformly determined, so that the thermal resistance naturally has a limit. , Only products with low power consumption will be provided. Further, the resin-encapsulated semiconductor device shown in FIG. 4 has a problem in that the cost of the double-sided adhesive-attached polyimide tape is high, the cost of the entire lead frame is high, and the cost ratio of the product is poor.

【０００５】又、ヒートスプレッダー付構造にするとペ
レット上の樹脂厚とヒートスプレッダー下の樹脂厚が均
等でなくなり樹脂クラックが発生し易いというような問
題点があった。Further, when the structure with the heat spreader is used, there is a problem that the resin thickness on the pellet and the resin thickness under the heat spreader are not uniform and resin cracks are likely to occur.

【０００６】[0006]

【課題を解決するための手段】本発明の樹脂封止型半導
体装置は、図３に示す様な通常形態のリードフレームの
ペレット搭載台部の下面にヒートスプレッダーを接着剤
にて固着し、ヒートスプレッダーが変形してインナーリ
ードに接触しない様にインナーリード下に電気的に絶縁
されているポリイミドテープを貼り付けた構造を備えて
いる。In the resin-sealed semiconductor device of the present invention, as shown in FIG. 3, a heat spreader is fixed to the lower surface of the pellet mounting base of a lead frame of a normal form by an adhesive to heat the same. It has a structure in which an electrically insulated polyimide tape is attached under the inner lead so that the spreader does not deform and come into contact with the inner lead.

【０００７】又、通常形態のリードフレームのペレット
搭載台部の下面に電気的絶縁膜に覆われたヒートスプレ
ッダーを接着剤にて固着した構造を備えている。さら
に、パッケージの構造として樹脂の上下厚均一化ペレッ
ト上の樹脂厚とヒートスプレッダー下面の樹脂厚を均一
にした事を備えている。Further, a heat spreader covered with an electrically insulating film is fixed to the lower surface of the pellet mounting base of the lead frame of a normal form with an adhesive. Further, as a package structure, the resin thickness on the pellets is made uniform and the resin thickness on the lower surface of the heat spreader is made uniform.

【０００８】[0008]

【実施例】次に本発明について図面を参照して説明す
る。図１は本発明の実施例１の樹脂封止型半導体装置の
断面図である。構成はペレット搭載台部７に固着された
ペレット３の電極パッドとインナーリード６が金属細線
２で連結され、ペレット搭載台部７の下面にはヒートス
プレッダー５が固着されている。ヒートスプレッダー５
が変形してインナーリード６に接触しない様に、インナ
ーリード６の下面にポリイミドテープ４を貼付する。The present invention will be described below with reference to the drawings. First Embodiment FIG. 1 is a sectional view of a resin-sealed semiconductor device according to a first embodiment of the present invention. The structure is such that the electrode pad of the pellet 3 fixed to the pellet mounting base 7 and the inner lead 6 are connected by the thin metal wire 2, and the heat spreader 5 is fixed to the lower surface of the pellet mounting base 7. Heat spreader 5
The polyimide tape 4 is attached to the lower surface of the inner lead 6 so that the inner lead 6 is not deformed and comes into contact with the inner lead 6.

【０００９】この実施例によって得られる効果は熱抵抗
が非常に低く高消費電力の製品を搭載する事が可能にな
る。The effect obtained by this embodiment is that the product having a very low thermal resistance and a high power consumption can be mounted.

【００１０】図２は本発明の実施例２の樹脂封止型半導
体装置の断面図である。構成はペレット搭載台部７に固
着されたペレット３の電極パッドとインナーリード６が
金属細線２で連結されペレット搭載台部７の下面には電
気的に絶縁されたヒートスプレッダー５が固着されてい
る。FIG. 2 is a sectional view of a resin-sealed semiconductor device according to a second embodiment of the present invention. The structure is such that the electrode pads of the pellets 3 fixed to the pellet mounting base 7 and the inner leads 6 are connected by the thin metal wires 2, and the heat spreader 5 electrically insulated is fixed to the lower surface of the pellet mounting base 7. ..

【００１１】実施例２の効果はポリイミドテープが存在
しない為、安価であると同時に熱抵抗が非常に弱く高消
費電力の製品を搭載する事が可能になる。Since the polyimide tape does not exist in the second embodiment, it is possible to mount a product which is inexpensive and has a very low thermal resistance and high power consumption.

【００１２】又、実施例１．２共に上下の樹脂厚の均一
化（Ｘ＝Ｙ）及びペレット上の樹脂厚とヒートスプレッ
ダー下の樹脂厚の均一化（ａ＝ｂ）をする事によりパッ
ケージをクラック及び反りに対して有利になり信頼性の
高い製品を供給する事が可能になる。In Example 1.2, the package is made uniform by making the upper and lower resin thicknesses uniform (X = Y) and the resin thickness on the pellets and the resin thickness under the heat spreader (a = b). It becomes advantageous for cracks and warpage, and it becomes possible to supply highly reliable products.

【００１３】[0013]

【発明の効果】以上説明したように本発明は樹脂封止型
半導体装置においてペレット搭載台下にヒートスプレッ
ダーを取付ける事により熱抵抗の低減がはかられ高消費
電力の製品をプラスチックパッケージで供給できるとい
う効果を有する。又、上下の樹脂厚の均一化、ペレット
上の樹脂厚とヒートスプレッダー下の樹脂厚の均一化を
する事によりパッケージのクラック及び反りが低減され
信頼性の高い製品を供給する事が可能になるという効果
を有する。As described above, according to the present invention, by mounting a heat spreader under the pellet mounting base in a resin-sealed semiconductor device, thermal resistance can be reduced and a high power consumption product can be supplied in a plastic package. Has the effect. Also, by making the upper and lower resin thickness uniform and the resin thickness on the pellet and the resin thickness under the heat spreader uniform, it is possible to reduce cracks and warpage of the package and to supply highly reliable products. Has the effect.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の実施例１の断面図。FIG. 1 is a sectional view of a first embodiment of the present invention.

【図２】本発明の実施例２の断面図。FIG. 2 is a sectional view of a second embodiment of the present invention.

【図３】通常リードフレームを使用した従来例の断面
図。FIG. 3 is a sectional view of a conventional example using a normal lead frame.

【図４】ヒートスプレッダー付リードフレームを使用し
た従来例の断面図である。FIG. 4 is a sectional view of a conventional example using a lead frame with a heat spreader.

【符号の説明】[Explanation of symbols]

１ 樹脂 ２ 金属再選 ３ ペレット ４ ポリイミドテープ ５ ヒートスプレッダー ６ インナーリード ７ ペレット搭載台 1 Resin 2 Metal Reselection 3 Pellet 4 Polyimide Tape 5 Heat Spreader 6 Inner Lead 7 Pellet Mounting Platform

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】 リードフレームのペレット搭載台に半導
体ペレットを搭載し、樹脂で封止した樹脂封止型半導体
装置において、前記リードフレームのインナーリードの
裏面にポリイミドテープが貼付され、ペレット搭載台の
下面に固着されたヒートスプレッダーを備えた事を特徴
とする樹脂封止型半導体装置。1. In a resin-sealed semiconductor device in which a semiconductor pellet is mounted on a pellet mounting base of a lead frame and sealed with resin, a polyimide tape is attached to the back surface of the inner lead of the lead frame, A resin-encapsulated semiconductor device having a heat spreader fixed to the lower surface. 【請求項２】 リードフレームのペレット搭載台に半導
体ペレットを搭載し、樹脂で封止した樹脂封止型半導体
装置において、ペレット搭載台の下面に固着された電気
絶縁膜付ヒートスプレッダーを備えることを特徴とする
樹脂封止型半導体装置。2. A resin-sealed semiconductor device in which semiconductor pellets are mounted on a pellet mounting base of a lead frame and sealed with a resin, comprising a heat spreader with an electrically insulating film fixed to the lower surface of the pellet mounting base. A characteristic resin-encapsulated semiconductor device. 【請求項３】 請求項１および２記載の樹脂封止型半導
体装置において、樹脂上下厚が等しく、かつ、半導体ペ
レット上の樹脂厚とヒートスプレッダー下の樹脂厚が等
しいことを特徴とする樹脂封止型半導体装置。3. The resin-encapsulated semiconductor device according to claim 1 or 2, wherein the resin top and bottom thicknesses are equal, and the resin thickness on the semiconductor pellet and the resin thickness under the heat spreader are equal. Static semiconductor device.
JP4001175A 1992-01-08 1992-01-08 Resin sealed semiconductor device Withdrawn JPH05211262A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4001175A JPH05211262A (en) 1992-01-08 1992-01-08 Resin sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4001175A JPH05211262A (en) 1992-01-08 1992-01-08 Resin sealed semiconductor device

Publications (1)

Publication Number Publication Date
JPH05211262A true JPH05211262A (en) 1993-08-20

Family

ID=11494103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4001175A Withdrawn JPH05211262A (en) 1992-01-08 1992-01-08 Resin sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPH05211262A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5583371A (en) * 1994-10-12 1996-12-10 Kabushiki Kaisha Toshiba Resin-sealed semiconductor device capable of improving in heat radiation characteristics of resin-sealed semiconductor elements
US5594282A (en) * 1993-12-16 1997-01-14 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
JPH0945838A (en) * 1995-07-31 1997-02-14 Rohm Co Ltd Resin-packaged semiconductor device and manufacture thereof
US5633529A (en) * 1994-07-13 1997-05-27 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5652461A (en) * 1992-06-03 1997-07-29 Seiko Epson Corporation Semiconductor device with a convex heat sink
US5693984A (en) * 1992-06-03 1997-12-02 Seiko Epson Corporation Semiconductor device having a heat radiator
US5698899A (en) * 1995-11-30 1997-12-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with first and second sealing resins
US5719442A (en) * 1994-11-11 1998-02-17 Seiko Epson Corporation Resin sealing type semiconductor device
US5777380A (en) * 1995-03-17 1998-07-07 Seiko Epson Corporation Resin sealing type semiconductor device having thin portions formed on the leads
US5801435A (en) * 1995-02-27 1998-09-01 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US6472730B1 (en) 1999-04-23 2002-10-29 Sharp Kabushiki Kaisha Semiconductor device and method of manufacturing the same

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5653891A (en) * 1992-06-03 1997-08-05 Seiko Epson Corporation Method of producing a semiconductor device with a heat sink
US5693984A (en) * 1992-06-03 1997-12-02 Seiko Epson Corporation Semiconductor device having a heat radiator
US5652461A (en) * 1992-06-03 1997-07-29 Seiko Epson Corporation Semiconductor device with a convex heat sink
US5594282A (en) * 1993-12-16 1997-01-14 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5891759A (en) * 1993-12-16 1999-04-06 Seiko Epson Corporation Method of making a multiple heat sink resin sealing type semiconductor device
US5633529A (en) * 1994-07-13 1997-05-27 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5583371A (en) * 1994-10-12 1996-12-10 Kabushiki Kaisha Toshiba Resin-sealed semiconductor device capable of improving in heat radiation characteristics of resin-sealed semiconductor elements
US5719442A (en) * 1994-11-11 1998-02-17 Seiko Epson Corporation Resin sealing type semiconductor device
US5801435A (en) * 1995-02-27 1998-09-01 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5777380A (en) * 1995-03-17 1998-07-07 Seiko Epson Corporation Resin sealing type semiconductor device having thin portions formed on the leads
JPH0945838A (en) * 1995-07-31 1997-02-14 Rohm Co Ltd Resin-packaged semiconductor device and manufacture thereof
US5698899A (en) * 1995-11-30 1997-12-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with first and second sealing resins
US6472730B1 (en) 1999-04-23 2002-10-29 Sharp Kabushiki Kaisha Semiconductor device and method of manufacturing the same

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