JPH05206255A - Jig for semiconductor - Google Patents

Abstract

PURPOSE:To prevent electric charging and to prevent adherence of a foreign matter and an electrostatic damage by combining a material to be positively charged with a material to be negatively charged, and forming a jig for semiconductor. CONSTITUTION:A semiconductor jig 1 is formed by holding a semiconductor wafer 2 between a part 1a formed of polytetrafluoroethylene to be charged positively and a part 1b formed of rayon to be charged negatively to combine both side faces of the jig 1, and connected at the center of a bottom 4 with conductive adhesive. Thus, the material to be positively charged and the material to be negatively charged are combined to cancel the positive and negative charges and hence not to charged the materials. Accordingly, adherence of foreign matters can be prevented. Further, electrostatic damage of a completed semiconductor device is prevented.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a jig for manufacturing a semiconductor device, and more particularly to a technique which is effective when applied to a jig which is used in a pre-process and requires prevention of foreign matter adhesion.

[0002]

2. Description of the Related Art In the manufacture of semiconductor devices, it is necessary to prevent foreign substances from adhering as much as possible in view of fine processing. In particular, it is an important issue in the semiconductor wafer processing step called the pre-step. Since such a foreign substance is generally charged by the jig and adsorbs the foreign substance, as a method of preventing the foreign substance adsorption, it is general to coat the jig with an antistatic agent to prevent the electrostatic charge.

There is no description of such an antistatic agent, but as an example of a jig for manufacturing a semiconductor, JP-A-63-
There is 213358.

[0004]

However, since the above-mentioned means is only thinly coated with the antistatic agent, if the semiconductor wafer is housed and the cleaning process is performed a plurality of times, the semiconductor wafer is worn and the coating material is not formed. There was a problem that the peeling-off antistatic effect was lost. It is an object of the present invention to provide a semiconductor jig that solves the above problems and does not lose the antistatic effect.

[0005]

The typical ones of the inventions disclosed in the present application will be described as follows.

That is, in the semiconductor jig, the jig is formed by combining a material that is positively charged and a material that is negatively charged by bonding or the like.

[0007]

According to the above-mentioned means, the positively charged material and the negatively charged material cancel each other's electric charges by the respective electric charges to be charged, so that the semiconductor jig is not charged with either electric charge. Is possible.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a partial sectional side view showing the structure of a semiconductor device jig of the present invention, and FIG. 2 is a sectional view thereof.

An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.

In the present embodiment, the target process is the process of cleaning the semiconductor wafer after etching in the pre-process.

As shown in FIG. 1, the semiconductor jig 1 of this embodiment accommodates a plurality of semiconductor wafers 2. The semiconductor jig 1 is formed so that the upper side is wide and the lower side is narrow to accommodate the semiconductor wafer 2. Further, grooves 3 for accommodating the semiconductor wafer 2 are formed respectively.

Among them, the semiconductor wafers 2 are arranged side by side so that their plane portions face each other. As shown in FIG. 2, the semiconductor jig has a portion 1a formed of polytetrafluoroethylene, which is a material that is positively charged to prevent electrostatic charge, and a portion 1b formed of rayon, which is negatively charged. A semiconductor jig 1 with a semiconductor wafer 2 in between
Are formed by combining both side surface portions of the above, and are connected by a conductive adhesive at the central portion of the bottom surface 4. With the semiconductor wafer 2 stored in this manner, the semiconductor wafer 2 is subjected to processing steps such as cleaning with pure water.

According to the present embodiment, both side surfaces can be connected and formed on the bottom surface of the jig with a material that charges a positive electric charge and a material that charges a negative electric charge, so that a semiconductor jig can be easily manufactured. It becomes possible to do it.

Although the present invention has been described above based on the technology which is the background of the present application, the embodiments of the present application are not limited to the above embodiments, and various modifications can be made without departing from the technology. Needless to say. That is, polytetrafluoroethylene was used as a material for charging a positive charge and rayon was used as a material for charging a negative charge, but any material may be used as long as it is charged to each charge. Absent.

For example, a material such as polyamide may be used.
Further, regarding the combination of the materials, the conductive adhesive is used for the bottom surface in this embodiment, but the combination may be made by another method. Further, in the present embodiment, the semiconductor jig is intended for the wafer, but it can also be used as a jig for holding the completed semiconductor device, a workbench, etc. as an antistatic jig.

[0016]

The effects obtained by the representative ones of the inventions disclosed in the present application will be described below.

That is, by combining a material that is charged with a positive charge and a material that is charged with a negative charge, the charges that are charged with each other will be canceled out. Can be provided. Further, in the completed semiconductor device, a semiconductor jig capable of preventing electrostatic breakdown can be provided.

[Brief description of drawings]

FIG. 1 is a partial cross-sectional side view showing a configuration of a semiconductor device jig of the present invention.

FIG. 2 is a cross-sectional view of the semiconductor jig shown in FIG.

[Explanation of symbols]

1. ． Semiconductor jig, 1a. ． Polytetrafluoroethylene part, 1b. ． Rayon part, 2. ． Semiconductor wafer,
3. ． Groove, 4. ． Bottom

Claims (1)

[Claims] 1. A jig for semiconductors, wherein the jig is a combination of a material that is positively charged and a material that is negatively charged.