JPH051971B2 - - Google Patents
Info
- Publication number
- JPH051971B2 JPH051971B2 JP62066147A JP6614787A JPH051971B2 JP H051971 B2 JPH051971 B2 JP H051971B2 JP 62066147 A JP62066147 A JP 62066147A JP 6614787 A JP6614787 A JP 6614787A JP H051971 B2 JPH051971 B2 JP H051971B2
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- wafer
- film thickness
- temperature
- wafer chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 235000012431 wafers Nutrition 0.000 claims description 39
- 229920002120 photoresistant polymer Polymers 0.000 claims description 30
- 238000000576 coating method Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はホトレジスト塗布機に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a photoresist coating machine.
従来、半導体ウエーハ(以下単にウエーハとい
う)にホトレジストを回転塗布する際、ホトレジ
ストの温度、カツプ内外の雰囲気温度及びウエー
ハを保持するウエーハチヤツクの温度は、周囲の
環境に影響されて不安定なものであつた。この
為、ウエーハ上に回転塗布されるホトレジストの
膜厚は不安定となり、所望する膜厚値と異なる場
合が多かつた。また膜厚測定は別の膜厚測定器に
より測定されていた。
Conventionally, when spin-coating a photoresist onto a semiconductor wafer (hereinafter simply referred to as a wafer), the temperature of the photoresist, the temperature of the atmosphere inside and outside the cup, and the temperature of the wafer chuck that holds the wafer are unstable due to the influence of the surrounding environment. Ta. For this reason, the film thickness of the photoresist spin-coated onto the wafer becomes unstable and often differs from the desired film thickness value. Furthermore, the film thickness was measured using a separate film thickness measuring device.
上述したように従来の塗布機によるホトレジス
トの塗布方法では、ホトレジスト及びカツプ内外
の雰囲気及びウエーハチヤツクに温度差があるた
め実際のホトレジストの塗布膜厚は、所望する膜
厚値と異なる場合が多い。従つて、回転塗布後の
ホトレジストの膜厚はウエーハ間及びロツト間に
おいて、ばらつきが大きくなり、半導体装置の製
造歩留り及び信頼性を低下させるという問題点が
あつた。
As described above, in the conventional photoresist coating method using a coating machine, the actual photoresist coating thickness often differs from the desired coating thickness because there are temperature differences between the photoresist, the atmosphere inside and outside the cup, and the wafer chuck. Therefore, there is a problem in that the film thickness of the photoresist after spin coating varies greatly from wafer to wafer and from lot to lot, reducing the manufacturing yield and reliability of semiconductor devices.
またホトレジストの膜厚は別の膜厚測定器によ
り測定されていたため、作業が煩雑となり多くの
作業時間を要するという問題点もあつた。 Furthermore, since the film thickness of the photoresist was measured using a separate film thickness measuring device, there was also the problem that the work was complicated and required a lot of work time.
本発明の目的は、作業時間を低減し、半導体装
置の製造歩留り及び信頼性を向上させることので
きるホトレジスト塗布機を提供することにある。 SUMMARY OF THE INVENTION An object of the present invention is to provide a photoresist coating machine that can reduce working time and improve manufacturing yield and reliability of semiconductor devices.
本発明のホトレジスト塗布機は、ホトレジスト
タンク収納部及び半導体ウエーハを保持するウエ
ーハチヤツク収納部の温度を一定に保つための温
度調節装置と、半導体ウエーハ表面に塗布された
ホトレジスト膜の膜厚を測定するための反射率測
定器とを含んで構成される。
The photoresist coating machine of the present invention includes a temperature control device for keeping the temperature of a photoresist tank housing part and a wafer chuck housing part holding a semiconductor wafer constant, and a temperature control device for measuring the film thickness of a photoresist film coated on the surface of a semiconductor wafer. It consists of a reflectance measuring device.
次に、本発明の実施例について図面を参照して
説明する。
Next, embodiments of the present invention will be described with reference to the drawings.
第1図は本発明の第1の実施例の構成図、第2
図a,bは第1の実施例のカツプの上面図及び側
面図、第3図は第1の実施例のウエーハチヤツク
とモータとの接続部の断面図である。 Fig. 1 is a configuration diagram of the first embodiment of the present invention;
Figures a and b are a top view and a side view of the cup of the first embodiment, and Figure 3 is a sectional view of the connection between the wafer chuck and the motor of the first embodiment.
第1図〜第3図において、ホトレジストタンク
15とホトレジストをレジスト供給管8を介して
ノズル13に供給するポンプ14とを収納するタ
ンク収納ボツクス11と、ウエーハ21を保持す
るウエーハチヤツク16をかこんで収容するカツ
プ2とモーター4とを収納するチヤツク収納ボツ
クス1内は、ヒーター及び冷却機からなる温度調
節装置9からの一定温度のクリーンエアにより温
度が一定に保たれている。 In FIGS. 1 to 3, a tank storage box 11 that stores a photoresist tank 15 and a pump 14 that supplies photoresist to a nozzle 13 via a resist supply pipe 8, and a wafer chuck 16 that holds a wafer 21 are housed therein. The inside of the chuck storage box 1, which houses the cup 2 and the motor 4, is kept at a constant temperature by clean air at a constant temperature from a temperature control device 9 consisting of a heater and a cooler.
すなわち、タング収納ボツクス11内は矢印A
に示されるクリーンエアの流れにより、またチヤ
ツク収納ボツクス1中には矢印A,Bに示される
ようにクリーンエアがペーパーフイルタ22を通
して送りこまれ、オーブン5内のダクト穴12よ
り排出されるようになつている。 In other words, the inside of the tongue storage box 11 is indicated by arrow A.
Due to the flow of clean air shown in , clean air is sent into the chuck storage box 1 through the paper filter 22 as shown by arrows A and B, and is discharged from the duct hole 12 in the oven 5. ing.
カツプ2の上部は開放されているため、ウエー
ハチヤツク16及びこれに真空保持されるウエー
ハ21周囲も一定の温度に保たれる。 Since the upper part of the cup 2 is open, the temperature around the wafer chuck 16 and the wafers 21 held in vacuum therein is also maintained at a constant temperature.
ウエーハチヤツク16とモーター4との接続部
にはカツプリング3が設けられており、これによ
りモーター4からの熱がウエーハチヤツク16に
伝わらないようになつている。 A coupling 3 is provided at the connection between the wafer chuck 16 and the motor 4, so that heat from the motor 4 is not transmitted to the wafer chuck 16.
またオーブン5と搬出用のキヤリアボツクス1
3Bの間には、ウエーハ表面に塗布されたホトレ
ジストの膜厚を測定するための反射率測定器6が
設けられており、この反射率測定器6からの信号
により自動膜厚測定器7で膜厚かリアルタイムで
表示されるようになつている。 Also, oven 5 and carrier box 1 for transport.
A reflectance measuring device 6 for measuring the film thickness of the photoresist coated on the wafer surface is provided between 3B, and an automatic film thickness measuring device 7 uses a signal from the reflectance measuring device 6 to measure the thickness of the photoresist coated on the wafer surface. It is now being displayed in real time.
このように構成された第1の実施例において
は、供給用のキヤリアボツクス13Aから搬送さ
れたウエーハ21は、ウエーハチヤツク16に保
持され、カツプ2内においてホトレジストが塗布
される。この時、ホトレジストの膜厚は周囲の環
境に影響されることがないため、従来のようにウ
エーハ間及びロツト間で膜厚がばらつくことはな
い。次にウエーハ21はオーブン5に送られプリ
ベークされたのち、反射率測定器6内でホトレジ
ストの膜厚が測定されたのち、搬出用のキヤリア
ボツクス13Bに収納される。 In the first embodiment constructed in this way, the wafer 21 transported from the supply carrier box 13A is held in the wafer chuck 16 and coated with photoresist in the cup 2. At this time, the film thickness of the photoresist is not affected by the surrounding environment, so there is no variation in film thickness between wafers or between lots as in the prior art. Next, the wafer 21 is sent to the oven 5 and prebaked, and then the film thickness of the photoresist is measured in the reflectance measuring device 6, and then stored in the carrier box 13B for carrying out.
このように第1の実施例においては、ホトレジ
ストの膜厚が均一に形成でき、しかもその膜厚は
連続的に短時間で測定できるため作業性は向上し
たものとなる。 As described above, in the first embodiment, the photoresist film can be formed to have a uniform thickness, and the film thickness can be measured continuously in a short time, so that workability is improved.
尚第1図にいおて10はカツプ2からのホトレ
ジストを収容する廃液タンクである。 In FIG. 1, reference numeral 10 is a waste liquid tank for storing the photoresist from the cup 2.
第4図は、本発明の第2の実施例を示す構成
図、第5図は第2の実施例のウエーハチヤツク1
6とモーター4の接続部分を示す断面図である。 FIG. 4 is a configuration diagram showing a second embodiment of the present invention, and FIG. 5 is a wafer chuck 1 of the second embodiment.
6 is a sectional view showing a connecting portion between the motor 6 and the motor 4. FIG.
この第2の実施例では、レジストタンク15、
ポンプ14及びウエーハチヤツクを収容するカツ
プ2を同一のボツクス内に収納し、ダウンフロー
タイプの温度調節装置9Aで温度調節を行なうよ
うに構成したものである。又、第5図に示したよ
うに、ウエーハチヤツク16とモーター4の接続
部を断熱材カバー20で囲み温度調節装置9Aか
直接クリーンエアーを給気口19Aより送り込む
ことにより、ウエーハチヤツク16の温度を制御
維持している。尚17はバキユームノズル、19
Bは排気口である。 In this second embodiment, a resist tank 15,
The pump 14 and the cup 2 containing the wafer chuck are housed in the same box, and the temperature is controlled by a downflow type temperature control device 9A. Further, as shown in FIG. 5, the temperature of the wafer chuck 16 can be controlled by surrounding the connection part between the wafer hutch 16 and the motor 4 with a heat insulating cover 20 and feeding clean air directly through the temperature control device 9A or the air supply port 19A. Maintained. In addition, 17 is a vacuum nozzle, 19
B is an exhaust port.
このように第2の実施例においては、レジスト
タンク15、ポンプ14及びカツプ2内外の雰囲
気及びウエーハチヤツク16を同一ボツクス内で
温度調節制御が行なえるため、ウエーハ21上の
ホトレジストの膜厚はより一定となる利点があ
る。従つてウエーハを露光した場合再現性のある
パターンが得られる。 In this way, in the second embodiment, the resist tank 15, the pump 14, the atmosphere inside and outside the cup 2, and the wafer chuck 16 can be temperature-controlled within the same box, so that the film thickness of the photoresist on the wafer 21 is more constant. There is an advantage that Therefore, a reproducible pattern can be obtained when the wafer is exposed.
以上説明したように本発明は、ホトレジストタ
ンク収納部及びウエーハチヤツク収納部の温度を
一定に保つための温度調節装置と、ホトレジスト
の膜厚を測定するための反射率測定器とを設ける
ことにより、ホトレジストの膜厚を均一に形成で
き、しかも作業時間を低減させることのできるホ
トレジスト塗布機が得られる。従つて半導体装置
の製造歩留り及び信頼性を向上させることができ
る。
As explained above, the present invention provides a temperature control device for keeping the temperature of the photoresist tank storage section and the wafer chuck storage section constant, and a reflectance measuring device for measuring the film thickness of the photoresist. A photoresist coating machine capable of forming a film with a uniform thickness and reducing working time can be obtained. Therefore, the manufacturing yield and reliability of semiconductor devices can be improved.
第1図は本発明の第1の実施例の構成図、第2
図a,bは第1の実施例に用いられるカツプの上
面図及び側面図、第3図は第1の実施例のウエー
ハチヤツクとモーターの接続部の断面図、第4図
は本発明の第2の実施例の構成図、第5図は第2
の実施例のウエーハチヤツクとモーターの接続部
の断面図である。
1……チヤツク収納ボツクス、2……カツプ、
3……カツプリング、4……モーター、5……オ
ーブン、6……反射率測定器、7……自動膜厚測
定部、8……レジスト供給管、9,9A……温度
調節装置、10……廃液タンク、11……タンク
収納ボツクス、12……ダクト穴、13……ノズ
ル、14……ポンプ、15……ホトレジストタン
ク、16……ウエーハチヤツク、17……バキユ
ームノズル、19A……給気口、19B……排気
口、20……断熱材カバー、21……ウエーハ、
22……ペーパーフイルタ。
Fig. 1 is a configuration diagram of the first embodiment of the present invention;
Figures a and b are top and side views of the cup used in the first embodiment, Figure 3 is a sectional view of the connection between the wafer chuck and motor of the first embodiment, and Figure 4 is the cup used in the second embodiment of the present invention. The configuration diagram of the embodiment, FIG. 5 is the second embodiment.
FIG. 3 is a cross-sectional view of the connection portion between the wafer backpack and the motor in the embodiment. 1...Chick storage box, 2...Cup,
3... Coupling, 4... Motor, 5... Oven, 6... Reflectance measuring device, 7... Automatic film thickness measuring section, 8... Resist supply pipe, 9, 9A... Temperature adjustment device, 10... ... Waste liquid tank, 11 ... Tank storage box, 12 ... Duct hole, 13 ... Nozzle, 14 ... Pump, 15 ... Photoresist tank, 16 ... Wafer chuck, 17 ... Vacuum nozzle, 19A ... Air supply port, 19B...exhaust port, 20...insulation material cover, 21...wafer,
22...Paper filter.
Claims (1)
ハを保持するウエーハチヤツク収納部の温度を一
定に保つための温度調節装置と、半導体ウエーハ
表面に塗布されたホトレジスト膜の膜厚を測定す
るための反射率測定器とを含むことを特徴とする
ホトレジスト塗布機。1. A temperature control device for keeping the temperature of the photoresist tank storage section and the wafer chuck storage section that holds semiconductor wafers constant, and a reflectance measuring device for measuring the film thickness of the photoresist film applied to the surface of the semiconductor wafer. A photoresist coating machine comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6614787A JPS63232429A (en) | 1987-03-20 | 1987-03-20 | Photoresist coating machine |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6614787A JPS63232429A (en) | 1987-03-20 | 1987-03-20 | Photoresist coating machine |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63232429A JPS63232429A (en) | 1988-09-28 |
JPH051971B2 true JPH051971B2 (en) | 1993-01-11 |
Family
ID=13307461
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6614787A Granted JPS63232429A (en) | 1987-03-20 | 1987-03-20 | Photoresist coating machine |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63232429A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000082661A (en) * | 1998-07-02 | 2000-03-21 | Toshiba Corp | Heating apparatus, estimating method of heating apparatus and pattern forming method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59112873A (en) * | 1982-12-18 | 1984-06-29 | Toshiba Corp | Application of resist and apparatus therefor |
JPS61214520A (en) * | 1985-03-20 | 1986-09-24 | Hitachi Ltd | Coating device |
-
1987
- 1987-03-20 JP JP6614787A patent/JPS63232429A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59112873A (en) * | 1982-12-18 | 1984-06-29 | Toshiba Corp | Application of resist and apparatus therefor |
JPS61214520A (en) * | 1985-03-20 | 1986-09-24 | Hitachi Ltd | Coating device |
Also Published As
Publication number | Publication date |
---|---|
JPS63232429A (en) | 1988-09-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |