JPH05190751A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH05190751A
JPH05190751A JP2178892A JP2178892A JPH05190751A JP H05190751 A JPH05190751 A JP H05190751A JP 2178892 A JP2178892 A JP 2178892A JP 2178892 A JP2178892 A JP 2178892A JP H05190751 A JPH05190751 A JP H05190751A
Authority
JP
Japan
Prior art keywords
pellet
semiconductor device
mounting portion
pellet mounting
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2178892A
Other languages
Japanese (ja)
Inventor
Naoki Miyamoto
直樹 宮本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2178892A priority Critical patent/JPH05190751A/en
Publication of JPH05190751A publication Critical patent/JPH05190751A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent that a crack is caused in a package when the title semiconductor device is soldered to a mounting board. CONSTITUTION:A pellet mounting part 1 on a lead frame is shaped to be nearly circular. A semiconductor pellet 4 is die-bonded here; after that, pads on the semiconductor pellet 4 are connected to the lead frame by metal wires; and a resin sealing operation is performed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、樹脂封止型半導体装置
に関し、特にリードフレームのペレット搭載部の構造に
改善を加えた半導体装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device, and more particularly to a semiconductor device having an improved structure of a pellet mounting portion of a lead frame.

【0002】[0002]

【従来の技術】図3は、この種従来の半導体装置の断面
図であり、図2は、その樹脂封止前の状態を示す平面図
である。
2. Description of the Related Art FIG. 3 is a sectional view of a conventional semiconductor device of this type, and FIG. 2 is a plan view showing a state before resin sealing.

【0003】図2に示されるように、従来例に用いられ
るリードフレームは、ペレット搭載部支持リード2によ
って支持された正方形のペレット搭載部1aと、そこか
ら放射状に延びる複数のリード3とを有している。
As shown in FIG. 2, the lead frame used in the conventional example has a square pellet mounting portion 1a supported by a pellet mounting portion supporting lead 2 and a plurality of leads 3 extending radially from the pellet mounting portion 1a. is doing.

【0004】従来の半導体装置は、図3に示されるよう
に、このリードフレームのペレット搭載部1a上に半導
体ペレット4を導電性樹脂5を用いて接着し、半導体ペ
レット上のパッドとリード3との間を金属細線6により
接続した後、例えばエポキシ系樹脂からなる封止樹脂7
により封止して製造されたものである。
In a conventional semiconductor device, as shown in FIG. 3, a semiconductor pellet 4 is adhered onto a pellet mounting portion 1a of the lead frame by using a conductive resin 5, and a pad on the semiconductor pellet and a lead 3 are attached. After connecting the two with a thin metal wire 6, a sealing resin 7 made of, for example, an epoxy resin is used.
It is manufactured by sealing with.

【0005】[0005]

【発明が解決しようとする課題】上述した従来の樹脂封
止型半導体装置では、特にQFP、SOP等の表面実装
型パッケージのものにおいては、実装時にパッケージに
クラック8が発生する可能性がかなり高い。このパッケ
ージクラックの発生機構は、未だ十分に解明されたとは
云い難いが、現時点においては、半導体装置を構成して
いる半導体ペレット搭載部下面と封止樹脂界面に蓄積し
た水分が、実装時の熱により気化、膨張し、その際に発
生する圧力が、樹脂の曲げ強度(破断応力)を超えたと
きに、発生すると考えられている。
In the above-mentioned conventional resin-encapsulated semiconductor device, particularly in the case of surface mounting type packages such as QFP and SOP, there is a high possibility that cracks 8 will occur in the package during mounting. .. It is hard to say that the mechanism of this package crack generation has been fully clarified, but at the present time, the moisture accumulated on the lower surface of the semiconductor pellet mounting part and the sealing resin interface that compose the semiconductor device is It is considered that the gas is vaporized and expanded by the above, and when the pressure generated at that time exceeds the bending strength (breaking stress) of the resin, the pressure is generated.

【0006】而して、クラックの発生個所について分析
してみたところ、ペレット搭載部の辺の中央付近に集中
していることが分った。その原因は次の理由によるもの
と考えられる。ペレット搭載部と封止樹脂との界面での
圧力発生によって該界面において樹脂の受ける応力は、
正方形板または長方形板に等分布荷重が作用した場合に
相当するものと仮定しうるが、正方形板または長方形板
に均等な分布の荷重が加えられた場合、最大たわみδ
MAX は板の中心において発生する。そして、クラックの
最も発生しやすい個所はペレット搭載部の周辺部である
ので、周辺部の中で最大たわみが生じるペレット搭載部
の中心に最も近い位置にある辺の中央部で破断応力を超
え、ここでクラックが発生する。
As a result of analysis of cracks, it was found that the cracks were concentrated near the center of the side of the pellet mounting portion. The cause is considered to be as follows. The stress received by the resin at the interface due to the pressure generation at the interface between the pellet mounting portion and the sealing resin is
It can be assumed that this is equivalent to the case where a uniform load is applied to a square plate or a rectangular plate, but when the load of an even distribution is applied to a square plate or a rectangular plate, the maximum deflection δ
MAX occurs at the center of the plate. And since the most likely place of cracking is the peripheral part of the pellet mounting part, exceeding the breaking stress in the central part of the side closest to the center of the pellet mounting part where the maximum deflection occurs in the peripheral part, A crack occurs here.

【0007】よって、本発明の目的とするところは、リ
ードフレームのペレット搭載部の周辺部を中心からなる
べく離すようにして応力が樹脂の特定部分に集中するの
を回避し、もってクラックの発生を防止することであ
る。
Therefore, an object of the present invention is to prevent the stress from concentrating on a specific portion of the resin by arranging the peripheral portion of the pellet mounting portion of the lead frame as far as possible from the center, thereby preventing the occurrence of cracks. It is to prevent.

【0008】[0008]

【課題を解決するための手段】本発明の半導体装置は、
リードフレームのペレット搭載部に半導体ペレットが搭
載され樹脂にてモールドされたものであって、前記ペレ
ット搭載部の外形形状は、ほとんどの部分で外側に凸の
滑らかな曲線を形成していることを特徴としている。
The semiconductor device of the present invention comprises:
A semiconductor pellet is mounted on the pellet mounting portion of the lead frame and molded with resin, and the outer shape of the pellet mounting portion is such that almost all of the outer surface has a convex smooth curve. It has a feature.

【0009】[0009]

【実施例】次に、本発明の実施例について図面を参照し
て説明する。図1は、本発明の一実施例の樹脂封止前の
状態を示す平面図である。同図に示されるように、本実
施例に用いられるリードフレームは、ペレット搭載部1
と、これを四方から支持するペレット搭載部支持リード
2と、ペレット搭載部1から放射状に延びるリード3と
から構成されている。
Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a plan view showing a state before resin sealing according to an embodiment of the present invention. As shown in the figure, the lead frame used in this embodiment is the pellet mounting unit 1.
And a pellet mounting portion supporting lead 2 for supporting the same from four sides, and leads 3 extending radially from the pellet mounting portion 1.

【0010】このリードフレームのペレット搭載部1
は、支持リード2によって支持された部分付近を除くと
外形が円形をなしている。そして、この円形部は支持リ
ード2と滑らかな曲線により接続されている。
The pellet mounting portion 1 of this lead frame
Has a circular outer shape except for a portion supported by the support lead 2. The circular portion is connected to the support lead 2 by a smooth curve.

【0011】このリードフレーム上に半導体ペレット4
が搭載され、常法により、半導体ペレット上のパッドと
リード3との間が金属細線により接続された後、樹脂封
止が行われ、本実施例の半導体装置が製造される。
A semiconductor pellet 4 is formed on the lead frame.
Is mounted, and the pad on the semiconductor pellet and the lead 3 are connected by a fine metal wire by a conventional method, and then resin sealing is performed to manufacture the semiconductor device of this embodiment.

【0012】本実施例では、図1に示されるように、最
もクラックの発生しやすいペレット搭載部の周辺部が、
半導体装置の実装時に最大たわみが発生するペレット搭
載部中央から一定以上の距離を置いているため、過大な
応力が作用する部分を解消することができ、クラックの
発生を防止することができる。
In the present embodiment, as shown in FIG. 1, the peripheral portion of the pellet mounting portion where cracks are most likely to occur,
Since a certain distance or more is placed from the center of the pellet mounting portion where the maximum deflection occurs when the semiconductor device is mounted, it is possible to eliminate the portion where excessive stress acts, and prevent the occurrence of cracks.

【0013】[0013]

【発明の効果】以上説明したように、本発明の半導体装
置は、ペレット搭載部の外形形状を外に凸の滑らかな曲
線としたものであるので、実装時にクラックの発生しや
すいペレット搭載部の周辺部を、最大たわみの発生する
ペレット搭載部の中心から一定以上の距離を置くことが
でき、実装時に周辺部の特定の個所に応力が集中するの
を防止することができる。よって、本発明によれば、実
装時におけるクラックの発生を抑止して、半導体装置の
信頼性を向上させることができる。
As described above, in the semiconductor device of the present invention, since the external shape of the pellet mounting portion is a smooth curve with an outward convex shape, the pellet mounting portion of The peripheral portion can be placed at a certain distance or more from the center of the pellet mounting portion where the maximum deflection occurs, and it is possible to prevent stress from concentrating on a specific portion of the peripheral portion during mounting. Therefore, according to the present invention, it is possible to suppress the occurrence of cracks during mounting and improve the reliability of the semiconductor device.

【0014】また、従来例ではクラックを発生させない
ようにするために実装条件に制限が受けていたが、本発
明によりこの制限が緩和される。
Further, in the conventional example, the mounting conditions are limited in order to prevent the generation of cracks, but the present invention alleviates this limitation.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の一実施例を示す平面図。FIG. 1 is a plan view showing an embodiment of the present invention.

【図2】 従来例の平面図。FIG. 2 is a plan view of a conventional example.

【図3】 従来例の断面図。FIG. 3 is a sectional view of a conventional example.

【符号の説明】[Explanation of symbols]

1、1a ペレット搭載部 2 ペレット搭載部支持リード 3 リード 4 半導体ペレット 5 導電性樹脂 6 金属細線 7 封止樹脂 8 クラック 1, 1a Pellet mounting part 2 Pellet mounting part Support lead 3 Lead 4 Semiconductor pellet 5 Conductive resin 6 Metal thin wire 7 Sealing resin 8 Crack

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 リードフレームのペレット搭載部に半導
体ペレットが搭載され樹脂にてモールドされた半導体装
置において、前記ペレット搭載部の外形形状は、ほとん
どの部分で外側に凸の滑らかな曲線を形成していること
を特徴とする半導体装置。
1. In a semiconductor device in which a semiconductor pellet is mounted on a pellet mounting portion of a lead frame and molded with a resin, the outer shape of the pellet mounting portion is a smooth curve that is convex to the outside in most parts. A semiconductor device characterized in that
【請求項2】 前記ペレット搭載部の外形形状は、ほと
んどの部分における曲率円の中心が該ペレット搭載部の
中心と一致している請求項1記載の半導体装置。
2. The semiconductor device according to claim 1, wherein in the outer shape of the pellet mounting portion, the center of a circle of curvature in almost all parts coincides with the center of the pellet mounting portion.
JP2178892A 1992-01-10 1992-01-10 Semiconductor device Pending JPH05190751A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2178892A JPH05190751A (en) 1992-01-10 1992-01-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2178892A JPH05190751A (en) 1992-01-10 1992-01-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH05190751A true JPH05190751A (en) 1993-07-30

Family

ID=12064809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2178892A Pending JPH05190751A (en) 1992-01-10 1992-01-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH05190751A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1207554A1 (en) * 1999-07-02 2002-05-22 Rohm Co., Ltd. Electronic part

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1207554A1 (en) * 1999-07-02 2002-05-22 Rohm Co., Ltd. Electronic part
EP1207554A4 (en) * 1999-07-02 2008-07-02 Rohm Co Ltd Electronic part

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