JPH05291473A - Plastic sealed semiconductor device and leadframe for use with it - Google Patents

Plastic sealed semiconductor device and leadframe for use with it

Info

Publication number
JPH05291473A
JPH05291473A JP4094183A JP9418392A JPH05291473A JP H05291473 A JPH05291473 A JP H05291473A JP 4094183 A JP4094183 A JP 4094183A JP 9418392 A JP9418392 A JP 9418392A JP H05291473 A JPH05291473 A JP H05291473A
Authority
JP
Japan
Prior art keywords
semiconductor device
resin
die pad
lead
pad plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4094183A
Other languages
Japanese (ja)
Inventor
Nobuhito Oouchi
伸仁 大内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP4094183A priority Critical patent/JPH05291473A/en
Publication of JPH05291473A publication Critical patent/JPH05291473A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To improve a geometrical strength of a plastic sealed semiconductor device, and to prevent cracks in resin when a semiconductor device is mounted as well as the occurrence of shifts of a die pad when it is encapsulated with resin. CONSTITUTION:Triangular projections 12 are formed at the center of a die pad plate 11 on which a semiconductor chip 1 is fixed by an adhesive 3. In addition, a plurality of leads 5 are fixed to each side of the plate via an insulating tape 14. The plate is then encapsulated with resin 7 such that a part of the projection 12 is completely exposed outside a semiconductor device.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は樹脂封止型半導体装置の
構造およびそれに用いるリードフレームの構造に関する
ものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a resin-sealed semiconductor device and a structure of a lead frame used for the same.

【0002】[0002]

【従来の技術】図10は従来の樹脂封止型半導体装置を
示す断面側面図であり、図11はその一部のみ詳細に示
す平面透視図である。図において、1はシリコン表面に
回路が形成された半導体素子、2はこの半導体素子1を
接着剤3を用いて固着したダイパッドであり、ダイパッ
ドサポート4によって支持されている(図11参照)。
5はリード、6は半導体素子1上に形成されたワイヤボ
ンディングパッドとリード5とを電気的に接続するAU
線、7はリード5の一端が露出するように封止した封止
樹脂である。
2. Description of the Related Art FIG. 10 is a sectional side view showing a conventional resin-encapsulated semiconductor device, and FIG. 11 is a plan perspective view showing only a part thereof in detail. In the figure, 1 is a semiconductor element having a circuit formed on a silicon surface, and 2 is a die pad to which the semiconductor element 1 is fixed with an adhesive 3, and is supported by a die pad support 4 (see FIG. 11).
Reference numeral 5 is a lead, and 6 is an AU for electrically connecting the wire bonding pad formed on the semiconductor element 1 to the lead 5.
The wire 7 is a sealing resin that is sealed so that one end of the lead 5 is exposed.

【0003】なお、上記ダイパッドサポート4は図11
に示すように、4本で支持するものや、2本あるいは3
本で支持するものなど、半導体装置の品種により、各種
の方法で支持されている。
The die pad support 4 is shown in FIG.
As shown in, one that is supported by four, two or three
Depending on the type of semiconductor device, such as the one supported by a book, it is supported by various methods.

【0004】この構成による樹脂封止型半導体装置を製
造工程順に説明すると、半導体素子1をダイパッド2に
接着剤3を用いて固着する。そして、この半導体素子1
上に形成されているワイヤボンディングパッドとリード
5をAU線6により電気的に接続する。その後、リード
5の一端が露出するように、全体を封止樹脂7により封
止する。そして、この封止樹脂7より突出したリード5
およびダイパッドサポート4を切り曲げ加工して、樹脂
封止型半導体装置を得ることができる。
The resin-encapsulated semiconductor device having this structure will be described in the order of manufacturing steps. The semiconductor element 1 is fixed to the die pad 2 with the adhesive 3. And this semiconductor device 1
The wire bonding pad formed above and the lead 5 are electrically connected by the AU wire 6. After that, the whole is sealed with a sealing resin 7 so that one end of the lead 5 is exposed. Then, the leads 5 protruding from the sealing resin 7
And the die pad support 4 can be cut and bent to obtain a resin-sealed semiconductor device.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、上記構
成の樹脂封止型半導体装置では、倉庫保管等の流通経路
において、空気中の水分を吸湿し、封止樹脂7とダイパ
ッド2との界面および接着剤3に水分としてたまる。特
に封止樹脂厚が薄くなると、後者の影響が大となる。そ
の後、半導体装置を基板に実装する際の熱8により、接
着剤3中にたまった水分が急激に気化膨張し、その蒸気
圧によって膨張した接着剤9が、ダイパッド2を押し下
げ、封止樹脂7にクラック10を発生させる(図3参
照)。この樹脂クラック10はダイパッド2が長方形の
場合は長辺側の中央部から、正方形の場合は各辺の中央
部から発生する。これは幾可学的なストレスが、その部
分に集中するからである。この樹脂クラック10は半導
体素子1上に形成された回路のアルミ配線部を腐食させ
る要因となり、半導体装置が機能しなくなる場合がある
など、信頼性を劣化させるという問題点があった。
However, in the resin-encapsulated semiconductor device having the above-mentioned structure, moisture in the air is absorbed in the distribution route such as warehouse storage, and the interface between the encapsulating resin 7 and the die pad 2 and the adhesion thereof. Accumulates as water in Agent 3. Especially, when the sealing resin becomes thinner, the latter effect becomes more significant. Then, the heat 8 when the semiconductor device is mounted on the substrate causes the moisture accumulated in the adhesive 3 to be rapidly vaporized and expanded, and the adhesive 9 expanded by the vapor pressure pushes down the die pad 2 and the sealing resin 7 A crack 10 is generated on the surface (see FIG. 3). The resin crack 10 is generated from the center of the long side when the die pad 2 is rectangular, and from the center of each side when the die pad 2 is square. This is because idiosyncratic stress concentrates on that part. The resin crack 10 causes corrosion of the aluminum wiring portion of the circuit formed on the semiconductor element 1 and may cause the semiconductor device to fail, thus degrading reliability.

【0006】本発明は、以上述べた半導体装置の信頼性
を劣化させる樹脂クラックの発生という問題点を除去す
るため、各辺の中央部に三角形状突起を設けたダイパッ
ドプレートに半導体素子を搭載するようにしたので、幾
可学的な強度向上および蒸気圧の放出を行い、樹脂クラ
ックの発生を防止し、信頼性の優れた樹脂封止型半導体
装置を提供することを目的とする。
According to the present invention, in order to eliminate the above-mentioned problem of resin cracks that deteriorate the reliability of a semiconductor device, a semiconductor element is mounted on a die pad plate having a triangular protrusion at the center of each side. Thus, it is an object of the present invention to provide a highly reliable resin-encapsulated semiconductor device which can improve the mechanical strength and release vapor pressure, prevent the occurrence of resin cracks.

【0007】[0007]

【課題を解決するための手段】本発明に係る樹脂封止型
半導体装置は、各辺の中央部に三角形状突起を設けた平
板状のダイパッドプレートと、このダイパッドプレート
に接着剤により固定した半導体素子と、このダイパッド
プレートに絶縁テープを介して固定した複数のリードと
を備え、前記三角形状突起の一部が半導体装置外形に完
全に露出するように樹脂封止するものである。
SUMMARY OF THE INVENTION A resin-sealed semiconductor device according to the present invention is a flat die pad plate having a triangular protrusion at the center of each side, and a semiconductor fixed to the die pad plate with an adhesive. An element and a plurality of leads fixed to this die pad plate via an insulating tape are provided, and resin sealing is performed so that a part of the triangular protrusion is completely exposed to the outer shape of the semiconductor device.

【0008】また、本発明に係るリードフレームは、リ
ードを支持するダムバーに、サポートのハーフエッジに
対向してハーフエッジを設けることにより、サポートと
ダムバーとが重ならないようにしたものである。
In the lead frame according to the present invention, the dam bar supporting the leads is provided with a half edge facing the half edge of the support so that the support and the dam bar do not overlap each other.

【0009】[0009]

【作用】本発明は幾可学的強度が向上し、かつ基板実装
時の樹脂クラックの発生を防止することができ、さら
に、ダイパッドプレートと数10本のリードが絶縁テー
プを介して固定されているので樹脂封止時のダイパッド
シフトの発生を防止することができる。
According to the present invention, the mechanical strength is improved, and the generation of resin cracks at the time of mounting on a substrate can be prevented. Further, the die pad plate and several tens of leads are fixed via an insulating tape. Therefore, it is possible to prevent the die pad shift from occurring during resin sealing.

【0010】[0010]

【実施例】図1は本発明に係る樹脂封止型半導体装置の
一実施例を示す断面側面図であり、図2は図1の一部の
み詳細に示す平面透視図である。図において、11は図
2に示すように、三角形状突起12を各辺の中央部に設
けたダイパッドプレートであり、半導体素子1が接着剤
3により接着され、さらに、その詳細を図3に示すよう
に、両面に接着剤13が塗布された絶縁テープ14(例
えば厚さ25〜50μm程度)を介してリード5が接着
される。
1 is a sectional side view showing an embodiment of a resin-sealed semiconductor device according to the present invention, and FIG. 2 is a plan perspective view showing only a part of FIG. 1 in detail. As shown in FIG. 2, reference numeral 11 denotes a die pad plate in which triangular protrusions 12 are provided in the central portions of the respective sides as shown in FIG. 2. The semiconductor element 1 is adhered by an adhesive 3, and the details thereof are shown in FIG. As described above, the lead 5 is adhered via the insulating tape 14 (for example, a thickness of about 25 to 50 μm) having the adhesive 13 applied on both sides.

【0011】なお、このダイパッドプレート11の三角
形状突起12の一部は、半導体装置の外形まで達してお
り、この部分から水分を放出することによって、半導体
装置の基板実装の際の加熱による接着剤3中の水分の膨
張を避けることができる。また、このダイパッドプレー
ト11の三角形状突起12を各辺の中央部に設けること
により、幾可学的なストレスの緩和を図ることができ
る。
Incidentally, a part of the triangular projection 12 of the die pad plate 11 reaches the outer shape of the semiconductor device, and moisture is released from this part so that an adhesive agent is applied by heating when mounting the semiconductor device on a substrate. It is possible to avoid the swelling of the water content in No. Further, by providing the triangular protrusions 12 of the die pad plate 11 at the center of each side, it is possible to relieve some kind of stress.

【0012】図4は図1のC部の詳細な側面図であり、
ダイパッドプレート11の各辺の中央部に設けた三角状
突起12の先端が、樹脂封止型半導体装置の外部に露出
するためには、その先端をリード5と同じ高さに設置さ
れるように、ダイパッドプレート11の一部をダウンセ
ット15させるものである。このため、リード5および
三角形状突起12を金型で挟み、樹脂封止することがで
きる。この結果、ダイパッドプレート11の三角形状突
起12は、樹脂封止型半導体装置の外部に露出するた
め、内部の水分をスムーズに矢印16の方向に放出する
ことができる。
FIG. 4 is a detailed side view of section C of FIG.
In order to expose the tips of the triangular protrusions 12 provided at the central portions of the sides of the die pad plate 11 to the outside of the resin-sealed semiconductor device, the tips should be installed at the same height as the leads 5. , A part of the die pad plate 11 is downset 15. Therefore, the lead 5 and the triangular protrusion 12 can be sandwiched by a mold and resin-sealed. As a result, the triangular protrusions 12 of the die pad plate 11 are exposed to the outside of the resin-sealed semiconductor device, so that the moisture inside can be smoothly discharged in the direction of the arrow 16.

【0013】なお、図5はリード5の一部をアップセッ
ト17させた場合であり、図4に示す場合と同様に動作
することはもちろんである。
FIG. 5 shows a case where a part of the lead 5 is upset 17, and it goes without saying that the same operation as that shown in FIG. 4 is performed.

【0014】ところで、ダイパッドプレート11の三角
形状突起12の位置は、樹脂封止型半導体装置の一辺に
設けたリード5の数が、奇数の場合には図6に示すよう
に1個のサポート12Aを設け、偶数の場合には図7に
示すように、2個のサポート12A、12Bを設ける。
このため、リード5と三角形状突起12とは重なること
はない。
When the number of leads 5 provided on one side of the resin-sealed semiconductor device is an odd number, the position of the triangular protrusion 12 of the die pad plate 11 is one support 12A as shown in FIG. And in the case of an even number, two supports 12A and 12B are provided as shown in FIG.
Therefore, the lead 5 and the triangular protrusion 12 do not overlap each other.

【0015】なお、上記サポート12Aおよび12B、
ダムバー19は、工程途中では外形より0.5mm程度以
上突出しており、リード加工時に、ダムバーカット20
と一緒に、サポートカット18を行なう。
The supports 12A and 12B,
The dam bar 19 protrudes from the outer shape by about 0.5 mm or more in the middle of the process.
A support cut 18 is performed together with.

【0016】また、最近、半導体装置の薄型化が進み、
ダムバー19の位置も半導体装置の外形までの距離が
0.2mm以下と短かくなり、ダイパッドプレート11の
三角形状突起12を突出するときに、ダムバー19と重
なる恐れがある。そこで、図9に示すように、ダムバー
19にハーフエッジ19Aを設けると共に、サポート1
2Aにもハーフエッジ12A−1を設けることにより、
重なりを回避することができる。
Recently, as semiconductor devices have become thinner,
The position of the dam bar 19 is also short such that the distance to the outer shape of the semiconductor device is 0.2 mm or less, and when the triangular protrusion 12 of the die pad plate 11 is projected, it may overlap with the dam bar 19. Therefore, as shown in FIG. 9, a half edge 19A is provided on the dam bar 19 and the support 1
By providing the half edge 12A-1 also in 2A,
Overlap can be avoided.

【0017】[0017]

【発明の効果】以上詳細に説明したように、本発明に係
る樹脂封止型半導体装置およびそれに用いるリードフレ
ームによれば、半導体素子を固着するダイパッドプレー
トの各辺の中央に三角形状突起を設け、半導体装置の外
形部まで、リードが重ならないように形成することにし
たので、幾可学的強度が向上すると共に、ダイパッドプ
レートを、蒸気圧が放出し易い形状にしたので、基板実
装時に発生する樹脂クラックを防止することができ、信
頼性を向上することができる。さらに、通常の工程どう
りで、製造できるだけではなく、ダイパッドプレートが
数10本のリードで支えられ、かつダイパッドプレート
そのものも、サポートで支えられているので、樹脂封止
時のダイパッドシフトが生じることはない、などの効果
がある。
As described in detail above, according to the resin-sealed semiconductor device and the lead frame used therefor according to the present invention, a triangular protrusion is provided at the center of each side of the die pad plate for fixing the semiconductor element. Since the leads are formed so as not to overlap with the outer shape of the semiconductor device, the mechanical strength is improved, and the die pad plate is shaped to easily release the vapor pressure. It is possible to prevent resin cracks that occur and to improve reliability. Further, not only can the manufacturing process be carried out in the usual process, but the die pad plate is supported by dozens of leads, and the die pad plate itself is also supported by the support, so that the die pad shift occurs during resin sealing. There is no effect.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る封脂封止型半導体装置の一実施例
を示す断面側面図である。
FIG. 1 is a cross-sectional side view showing an embodiment of a resin-sealing type semiconductor device according to the present invention.

【図2】図1の一部のみ詳細に示す平面透視図である。FIG. 2 is a plan perspective view showing only a part of FIG. 1 in detail.

【図3】図1のA部の詳細な側面図である。FIG. 3 is a detailed side view of a portion A of FIG.

【図4】図1のB部の詳細な側面図である。FIG. 4 is a detailed side view of part B of FIG.

【図5】図4の他の実施例を示す側面図である。5 is a side view showing another embodiment of FIG. 4. FIG.

【図6】リードの数が奇数の場合の、三角形状突起に設
けたサポートの位置を示す平面図である。
FIG. 6 is a plan view showing the positions of supports provided on the triangular protrusions when the number of leads is odd.

【図7】リードの数が偶数の場合の、三角形状突起に設
けたサポートの位置を示す平面図である。
FIG. 7 is a plan view showing the positions of supports provided on the triangular protrusions when the number of leads is even.

【図8】ダムバーとサポートとの重なりを回避する場合
を示す平面図である。
FIG. 8 is a plan view showing a case where an overlap between a dam bar and a support is avoided.

【図9】図8の一部詳細な斜視図である。9 is a partially detailed perspective view of FIG. 8. FIG.

【図10】従来の装置の断面側面図である。FIG. 10 is a cross-sectional side view of a conventional device.

【図11】図10の透視平面図である。11 is a perspective plan view of FIG.

【図12】図10を説明するための側面図である。12 is a side view for explaining FIG. 10. FIG.

【符号の説明】[Explanation of symbols]

11 ダイパッドプレート 12 三角形状突起 14 絶縁テープ 19 ダムバー 11 Die pad plate 12 Triangular protrusion 14 Insulating tape 19 Dam bar

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 各辺の中央部に三角形状突起を設けた平
板状のダイパッドプレートと、このダイパッドプレート
に接着剤により固定した半導体素子と、このダイパッド
プレートに絶縁テープを介して固定した複数のリードと
を備え、前記三角形状突起の一部が半導体装置外形に完
全に露出するように樹脂封止することを特徴とする樹脂
封止型半導体装置。
1. A flat plate-shaped die pad plate having a triangular protrusion at the center of each side, a semiconductor element fixed to the die pad plate with an adhesive, and a plurality of semiconductor elements fixed to the die pad plate via an insulating tape. A resin-sealed semiconductor device comprising a lead and resin-molded so that a part of the triangular protrusion is completely exposed to the outer shape of the semiconductor device.
【請求項2】 前記ダイパッドプレートの一部をダウン
セットあるいはリードの一部をアップセットし、三角形
状突起の先端とリードの外形端の高さを同じにしたこと
を特徴とする請求項1記載の樹脂封止型半導体装置。
2. The part of the die pad plate is down-set or the part of the lead is up-set, and the heights of the tip of the triangular protrusion and the outer end of the lead are the same. Resin-sealed semiconductor device.
【請求項3】 前記ダイパッドプレートの三角形状突起
の先端が、露出部で、リードと重ならないように、半導
体装置の一辺に設けたリードの数が奇数あるいは偶数に
より、三角形状突起の先端に設けたサポートの位置を変
えることを特徴とする請求項2記載の樹脂封止型半導体
装置。
3. The tip of the triangular protrusion of the die pad plate is provided on the tip of the triangular protrusion by the number of leads provided on one side of the semiconductor device being an odd number or an even number so that the tip does not overlap the lead at the exposed portion. The resin-sealed semiconductor device according to claim 2, wherein the position of the support is changed.
【請求項4】 リードを支持するダムバーの、サポート
に設けたハーフエッジに対向して、ハーフエッジを設
け、サポートとダムバーとが重ならないようにしたこと
を特徴とするリードフレーム。
4. A lead frame, wherein a half edge is provided so as to oppose a half edge provided on a support of a dam bar that supports a lead so that the support and the dam bar do not overlap each other.
JP4094183A 1992-04-14 1992-04-14 Plastic sealed semiconductor device and leadframe for use with it Pending JPH05291473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4094183A JPH05291473A (en) 1992-04-14 1992-04-14 Plastic sealed semiconductor device and leadframe for use with it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4094183A JPH05291473A (en) 1992-04-14 1992-04-14 Plastic sealed semiconductor device and leadframe for use with it

Publications (1)

Publication Number Publication Date
JPH05291473A true JPH05291473A (en) 1993-11-05

Family

ID=14103210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4094183A Pending JPH05291473A (en) 1992-04-14 1992-04-14 Plastic sealed semiconductor device and leadframe for use with it

Country Status (1)

Country Link
JP (1) JPH05291473A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0680086A3 (en) * 1994-04-15 1997-05-02 Matsushita Electric Ind Co Ltd Semiconductor device and method of producing said semiconductor device.
JPH09129808A (en) * 1995-10-31 1997-05-16 Nec Corp Plastic molded semiconductor device and its manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0680086A3 (en) * 1994-04-15 1997-05-02 Matsushita Electric Ind Co Ltd Semiconductor device and method of producing said semiconductor device.
JPH09129808A (en) * 1995-10-31 1997-05-16 Nec Corp Plastic molded semiconductor device and its manufacture

Similar Documents

Publication Publication Date Title
JP2978861B2 (en) Molded BGA type semiconductor device and manufacturing method thereof
JP2939614B2 (en) Stacked semiconductor package
JPH1131776A (en) Semiconductor chip package
US6495908B2 (en) Multi-chip semiconductor package
JPH08111491A (en) Semiconductor device
JPH05291473A (en) Plastic sealed semiconductor device and leadframe for use with it
JP3565114B2 (en) Resin-sealed semiconductor device
JPH07161910A (en) Resin-sealed type semiconductor device
JP3229816B2 (en) Method for manufacturing resin-encapsulated semiconductor device
JP3305981B2 (en) Semiconductor device
KR100373891B1 (en) Semiconductor device and method of its fabrication
JP3013810B2 (en) Method for manufacturing semiconductor device
JP2001267484A (en) Semiconductor device and manufacturing method thereof
JPH10214933A (en) Semiconductor device and its manufacturing
JP3185455B2 (en) Resin-sealed semiconductor device
KR0152902B1 (en) Structure of bottom lead package and method for manufacturing the same
JPH09153589A (en) Semiconductor device
JP3251436B2 (en) Lead frame, semiconductor device, and method of manufacturing semiconductor device
JP2771475B2 (en) Semiconductor device
JPH08162596A (en) Lead frame and semiconductor device
KR0141945B1 (en) Semiconductor package and leadframe with heat sink
JP2001127234A (en) Lead frame and resin-sealed semiconductor device using the same, and method of manufacturing the same
JPS60110145A (en) Resin-sealed type semiconductor device
JPH0575009A (en) Lead frame, semiconductor device using same and manufacture thereof
JPH1167980A (en) Resin-sealed semiconductor device and its manufacture