JPH05190327A - Magnetic thin film and manufacture thereof - Google Patents

Magnetic thin film and manufacture thereof

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Publication number
JPH05190327A
JPH05190327A JP419292A JP419292A JPH05190327A JP H05190327 A JPH05190327 A JP H05190327A JP 419292 A JP419292 A JP 419292A JP 419292 A JP419292 A JP 419292A JP H05190327 A JPH05190327 A JP H05190327A
Authority
JP
Japan
Prior art keywords
thin film
film
magnetic
plating
magnetic thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP419292A
Other languages
Japanese (ja)
Other versions
JP3233963B2 (en
Inventor
Osamu Shinoura
治 篠浦
Fujimi Kimura
富士巳 木村
Yoshikazu Narumiya
義和 成宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
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Filing date
Publication date
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Priority to JP00419292A priority Critical patent/JP3233963B2/en
Publication of JPH05190327A publication Critical patent/JPH05190327A/en
Application granted granted Critical
Publication of JP3233963B2 publication Critical patent/JP3233963B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To provide a highly corrosion-resisting magnetic thin film of low coercive force and high saturation magnetic flux density by a wet plating method excellent in mass productivity. CONSTITUTION:A Co-Fe-Rh alloy film is formed by plating to obtain a magnetically soft thin film with the Rh content being 1-8wt% and having the S content of 500-2000ppm. The magnetic thin film is excellent in corrosion resistance and has an excellent soft magnetism characteristic.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、湿式めっき法により成
膜される磁性薄膜に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic thin film formed by a wet plating method.

【0002】[0002]

【従来の技術】薄膜磁気ヘッドや薄膜トランスの磁性薄
膜には、低保磁力、高飽和磁束密度、低磁歪等の優れた
軟磁気特性が要求されると同時に信頼性向上の為に高耐
食性が必要である。
2. Description of the Prior Art Magnetic thin films for thin film magnetic heads and thin film transformers are required to have excellent soft magnetic properties such as low coercive force, high saturation magnetic flux density and low magnetostriction, and at the same time have high corrosion resistance for improving reliability. is necessary.

【0003】これらの磁性薄膜は、スパッタ法等の気相
成膜法や電気めっき法等の液相成膜法により形成される
のが一般的であるが、液相めっき法には、大面積の成膜
が容易で、しかも均一性の高い膜がえられ、また工数が
少ないという利点がある。
These magnetic thin films are generally formed by a vapor phase film forming method such as a sputtering method or a liquid phase film forming method such as an electroplating method. However, the liquid phase plating method has a large area. Is advantageous in that it can be easily formed, a highly uniform film can be obtained, and the number of steps is small.

【0004】特に近年の記録密度の上昇は記録媒体の保
磁力の上昇による部分が大きい。保磁力の大きな記録媒
体に十分に書き込む為には記録ヘッドからより強い磁界
を発生する必要がある。このために従来から広く使用さ
れていたNi−Fe合金(パーマロイ)以上の高飽和磁
束密度材料が求められている。この磁気特性的な要求を
満たす磁性めっき膜としてはCo−Fe合金が挙げられ
る。
Particularly, the recent increase in recording density is largely due to the increase in coercive force of the recording medium. In order to sufficiently write on a recording medium having a large coercive force, it is necessary to generate a stronger magnetic field from the recording head. For this reason, there has been a demand for a material having a high saturation magnetic flux density which is higher than that of the Ni-Fe alloy (permalloy) which has been widely used in the past. A Co—Fe alloy is an example of a magnetic plating film that satisfies the magnetic property requirements.

【0005】しかし、耐食性では従来から広く使用され
ている比較的低飽和磁束密度材料であるNi−Fe合金
と比較すると劣っていた。
However, the corrosion resistance was inferior to that of Ni-Fe alloy which is a relatively low saturation magnetic flux density material which has been widely used in the past.

【0006】Co−Fe合金の耐食性向上のためには第
3元素の添加が有効であるが、優れた軟磁気特性を損な
わないで耐食性を向上させることは困難であった。
The addition of the third element is effective for improving the corrosion resistance of the Co-Fe alloy, but it has been difficult to improve the corrosion resistance without impairing the excellent soft magnetic characteristics.

【0007】たとえばPd、Pt、Au、Cu等の添加
では耐食性向上は可能だが軟磁気特性への影響があり十
分な量の貴金属を膜に含有させることは出来なかった。
[0007] For example, the addition of Pd, Pt, Au, Cu or the like can improve the corrosion resistance, but it has an influence on the soft magnetic properties, so that it was not possible to contain a sufficient amount of noble metal in the film.

【0008】[0008]

【発明が解決しようとする課題】本発明はこのような事
情からなされたものであり、低保磁力、高飽和磁束密度
および高耐食性を有する磁性薄膜を、めっき浴の煩雑な
管理なしにめっき法により成膜することを目的とする。
The present invention has been made under such circumstances, and a method of plating a magnetic thin film having a low coercive force, a high saturation magnetic flux density and a high corrosion resistance without complicated management of a plating bath is provided. The purpose is to form a film.

【0009】[0009]

【課題を解決するための手段】本発明者は、上記課題を
解決するために鋭意検討、研究した結果、Co−Fe合
金めっきにRhを添加することで耐食性に優れ、かつ磁
気特性を損なわない磁性材料を完成するに至った。かつ
膜の組成管理には浴中の金属イオン濃度、あるいは金属
イオン濃度比のみに依存せず成膜時の電流密度により管
理すること、あるいは浴中のRhイオンを電解の進行に
つれ補給することで安定した膜組成、すなわち安定に高
耐食性かつ高軟磁気特性を得る事を可能とした。
Means for Solving the Problems As a result of intensive studies and research for solving the above-mentioned problems, the present inventor has found that adding Rh to Co—Fe alloy plating has excellent corrosion resistance and does not impair magnetic properties. We have completed the magnetic material. Moreover, the composition control of the film does not depend only on the metal ion concentration in the bath or the metal ion concentration ratio, but is controlled by the current density at the time of film formation, or Rh ions in the bath are replenished as the electrolysis progresses. A stable film composition, that is, stable corrosion resistance and high soft magnetic properties can be obtained.

【0010】このような目的は、下記(1)〜(2)の
本発明により達成される。
Such an object is achieved by the present invention described in (1) and (2) below.

【0011】(1)Co、FeおよびRhを主成分と
し、Rhの含有量が1〜8重量%でありSの含有量が5
00〜2000ppmであることを特徴とする磁性めっき
薄膜。
(1) Co, Fe and Rh as main components, the content of Rh is 1 to 8% by weight, and the content of S is 5
A magnetic plating thin film, which is characterized in that it is 0.00 to 2000 ppm.

【0012】(2)湿式めっき法により成膜されコバル
トイオンの濃度が0.05〜5モル/l、鉄イオン濃度
が0.001〜5モル/l、pHが1.0から4.0で
あり、イオウを有する低分子有機化合物を浴中に溶解し
ていることを特徴とする磁性薄膜の製造方法。
(2) A film formed by a wet plating method has a cobalt ion concentration of 0.05 to 5 mol / l, an iron ion concentration of 0.001 to 5 mol / l, and a pH of 1.0 to 4.0. A method for producing a magnetic thin film, characterized in that a low molecular organic compound having sulfur is dissolved in a bath.

【0013】[0013]

【作用】本発明の磁性薄膜は湿式めっき法、すなわち電
気めっき法、無電解めっき法及び置換めっき法により形
成され、Co、Feを主成分としRh及びSを含有する
ものである。
The magnetic thin film of the present invention is formed by a wet plating method, that is, an electroplating method, an electroless plating method and a displacement plating method, and contains Co and Fe as main components and contains Rh and S.

【0014】このような組成により、本発明の磁性薄膜
は、3 Oe以下、特に1 Oe以下の保磁力Hcと高耐食性
が容易に得られ、例えば薄膜磁気ヘッドや薄膜トランス
用の磁性薄膜として極めて有用である。
With such a composition, the magnetic thin film of the present invention can easily obtain a coercive force Hc of 3 Oe or less, particularly 1 Oe or less and high corrosion resistance, and is extremely useful as a magnetic thin film for a thin film magnetic head or a thin film transformer, for example. It is useful.

【0015】しかも、本発明の磁性薄膜形成に際して用
いているめっき浴にはCo、Fe、Rhの3種の金属イ
オンが存在しているが、膜組成の管理には浴中の金属イ
オン濃度や金属イオン組成比のみでなく成膜時の電流密
度を管理することでおこなうことにより容易に安定した
組成の膜が形成される。
Moreover, although three kinds of metal ions of Co, Fe and Rh are present in the plating bath used for forming the magnetic thin film of the present invention, the metal ion concentration in the bath and the metal ion concentration in the bath are used to control the film composition. By controlling not only the metal ion composition ratio but also the current density during film formation, a film having a stable composition can be easily formed.

【0016】また、本発明の磁性合金にはC、Cr、C
u、Sn、Ru、Au、Pd、Ag、Mn、P、B、I
n、Mo、Pb、Re、W、Zn、Zr及びPt等から
選択される1種以上の元素を3重量%以下含有すること
で高周波特性の向上等も期待される。またこれらの元素
を不純物として微量含有することも特に支障は認められ
ないので安価な試薬の使用によるコスト低減も可能であ
る。
The magnetic alloy of the present invention contains C, Cr, C.
u, Sn, Ru, Au, Pd, Ag, Mn, P, B, I
It is expected that the high frequency characteristics will be improved by containing 3 wt% or less of one or more elements selected from n, Mo, Pb, Re, W, Zn, Zr, Pt and the like. Further, even if a trace amount of these elements is contained as an impurity, no particular trouble is observed, so that the cost can be reduced by using an inexpensive reagent.

【0017】但し、3重量%以上の含有の場合には磁気
特性に悪影響を及ぼしたりBsの低下を招く場合が多い
ので注意が必要である。
However, it should be noted that the content of 3% by weight or more often adversely affects the magnetic properties and lowers Bs.

【0018】[0018]

【具体的構成】以下、本発明の具体的構成について詳細
に説明する。
[Specific Structure] The specific structure of the present invention will be described in detail below.

【0019】本発明の磁性薄膜は湿式めっき法により形
成され、Co、FeおよびRhを主成分としてSを含有
する。
The magnetic thin film of the present invention is formed by a wet plating method and contains S with Co, Fe and Rh as the main components.

【0020】Rhの含有量は、1〜8重量%、好ましく
は3〜7重量%とする。Rhの含有量が前記範囲未満で
あると、十分な耐食性が得られず、前記範囲を越える
と、軟磁気特性が低下する。
The content of Rh is 1 to 8% by weight, preferably 3 to 7% by weight. If the content of Rh is less than the above range, sufficient corrosion resistance cannot be obtained, and if it exceeds the above range, the soft magnetic properties deteriorate.

【0021】Sの含有量は、500〜2000ppm、
好ましくは800〜1500ppmとする。Sの含有量
が前記範囲未満であると、低い保磁力Hcが得られなく
なり、前記範囲を越えると、耐食性が低下する。
The content of S is 500 to 2000 ppm,
It is preferably 800 to 1500 ppm. If the content of S is less than the above range, a low coercive force Hc cannot be obtained, and if it exceeds the above range, the corrosion resistance decreases.

【0022】本発明の磁性薄膜は、低いHcと優れた耐
食性を有する。具体的には、Hcとして3 Oe以下、特
に1 Oe以下、さらには0.5 Oe以下が得られる。耐食
性としては0.01N−KCl溶液中で銀/塩化銀電極
を基準電極に用いた自然電位では−70mV以上の値が
得られる。これはパーマロイと同等以上である。
The magnetic thin film of the present invention has low Hc and excellent corrosion resistance. Specifically, Hc of 3 Oe or less, particularly 1 Oe or less, and further 0.5 Oe or less can be obtained. As for the corrosion resistance, a value of -70 mV or more is obtained at a natural potential using a silver / silver chloride electrode as a reference electrode in a 0.01N-KCl solution. This is equivalent to or better than Permalloy.

【0023】本発明で好ましく用いるめっき浴には、コ
バルトイオンと鉄イオン、Rhイオンとを含有し、さら
にSを含む低分子有機化合物を含有するものである。
The plating bath preferably used in the present invention contains cobalt ions, iron ions, and Rh ions, and further contains a low molecular organic compound containing S.

【0024】本発明で用いるコバルトイオン、鉄イオ
ン、Rhイオン供給源としては硫酸塩、塩化塩、スルフ
ァミン酸塩、酢酸塩、硝酸塩等の水溶性の塩を用いるの
が好ましい。コバルトイオン、鉄イオンは金属をめっき
浴中に浸積させ自然溶解したイオンや陽極として電解に
より溶解したイオンも有効に利用可能である。
As the cobalt ion, iron ion and Rh ion source used in the present invention, it is preferable to use a water-soluble salt such as sulfate, chloride, sulfamate, acetate or nitrate. Cobalt ions and iron ions can be effectively used as ions that are naturally dissolved by immersing a metal in a plating bath and ions that are dissolved by electrolysis as an anode.

【0025】コバルトイオンの濃度は0.05〜5モル
/l、特に0.1〜1モル/lであることが好ましい。
コバルトイオンの濃度が前記範囲未満であると析出速度
の低下が著しく、前記範囲を越えるとめっき浴の粘度が
上昇し一般には作業性や微細なレジストパターン内への
成膜が困難となる。
The concentration of cobalt ion is preferably 0.05 to 5 mol / l, particularly 0.1 to 1 mol / l.
If the concentration of cobalt ions is less than the above range, the deposition rate is remarkably reduced, and if it exceeds the above range, the viscosity of the plating bath increases, and workability and film formation in a fine resist pattern are generally difficult.

【0026】また、めっき浴中における鉄イオン濃度
は、0.001〜5モル/lの範囲でより好ましくは
0.01〜1モル/lである。コバルトイオンとの濃度
比が成膜される膜の組成を決定する大きな要因であるの
で、所望の膜組成が得られるように決定すれば良い。
The iron ion concentration in the plating bath is in the range of 0.001 to 5 mol / l, more preferably 0.01 to 1 mol / l. Since the concentration ratio with cobalt ions is a major factor in determining the composition of the film to be formed, it may be determined so that a desired film composition can be obtained.

【0027】但し、鉄イオンがゼロの場合にはCoRh
膜となりHCP構造をとり軟磁気特性は十分ではない。
一般には飽和磁歪がゼロとなる組成が好ましい。
However, when the iron ion is zero, CoRh
It becomes a film and has an HCP structure, and the soft magnetic properties are not sufficient.
Generally, a composition in which the saturation magnetostriction is zero is preferable.

【0028】また、Rhイオンのめっき浴中の濃度は、
通常0.005〜5g/lで、より好ましくは0.01
〜0.5g/lである。RhはCo、Feと析出電位が
はるかに異なるためにCo、Feと共析させるには浴中
のRhイオン濃度をCo、Feイオン濃度に比べて小量
にして拡散律速での析出反応を利用する。すなわちRh
イオンのみに注目した場合には電流密度によらず析出さ
れるRh金属の量は一定となる。膜の組成比はそれに加
えて析出されるCo、Feの量により決定される。
The concentration of Rh ions in the plating bath is
Usually 0.005 to 5 g / l, more preferably 0.01
~ 0.5 g / l. Since Rh has a far different deposition potential from Co and Fe, in order to co-deposit it with Co and Fe, the Rh ion concentration in the bath should be made smaller than the Co and Fe ion concentrations to use a diffusion-controlled precipitation reaction. To do. That is, Rh
When focusing only on ions, the amount of Rh metal deposited is constant regardless of the current density. The composition ratio of the film is determined by the amounts of Co and Fe that are additionally deposited.

【0029】浴のpHは1.0〜4.0で特に2.0〜
3.0が好ましい。上記範囲以下では成膜速度が遅く、
前記範囲以上では3価鉄の沈澱が生じ易い。
The pH of the bath is 1.0 to 4.0, especially 2.0 to 4.0.
3.0 is preferable. Below the above range, the film formation rate is slow,
If the content is more than the above range, precipitation of ferric iron is likely to occur.

【0030】低電流密度でCo、Feの析出電位以下の
場合には純Rh膜が成膜され、高電流密度になりCo、
Feの析出電位以上となればCoFeRh合金が得られ
る。
When the current density is low and the deposition potential of Co and Fe is lower than that, a pure Rh film is formed and the current density becomes high, and Co,
A CoFeRh alloy is obtained when the precipitation potential of Fe is higher than the precipitation potential.

【0031】そして電流密度の上昇につれてCoFeの
析出速度が早くなり、相対的に膜中のRhの含有量は低
下していく。
Then, as the current density increases, the CoFe precipitation rate increases, and the Rh content in the film relatively decreases.

【0032】一定のRh含有量の金属薄膜を得るにはR
hイオン濃度を一定に保つためには、成膜に応じて析出
し減少したイオンを補充することで可能である。消費量
が安定しておれば補給は容易である。
To obtain a metal thin film having a constant Rh content, R
In order to keep the h ion concentration constant, it is possible to replenish the ions that are deposited and reduced according to the film formation. Replenishment is easy if the consumption is stable.

【0033】また成膜時の電流密度すなわち電位を管理
することでもRh含有量を一定に保てる。この場合には
膜全体の成膜速度が変化するが、浴管理の手間をはぶく
ことが可能である。
The Rh content can also be kept constant by controlling the current density during film formation, that is, the potential. In this case, the film forming rate of the entire film changes, but it is possible to avoid the trouble of bath management.

【0034】鉄イオンとしては2価鉄イオンが好まし
い。しかし2価鉄イオンは、酸化して3価鉄イオンにな
りやすい。3価鉄イオンは小量ならば問題ではなく、レ
ベリング性等に効果がある場合もある。また容易に2価
鉄イオンに還元することが可能であるし生成を防ぐこと
も容易である。
As the iron ion, divalent iron ion is preferable. However, divalent iron ions are easily oxidized to trivalent iron ions. If the amount of trivalent iron ion is small, it does not matter, and it may be effective in leveling property. Further, it can be easily reduced to divalent iron ions, and it is easy to prevent the generation.

【0035】還元方法としてはアスコルビン酸、次亜り
ん酸あるいはその塩のような還元剤の添加やCo、Fe
の金属をめっき浴に浸積し自然溶解する際の副反応を利
用することが一般的に知られている。
As a reducing method, a reducing agent such as ascorbic acid, hypophosphorous acid or a salt thereof is added, or Co or Fe is added.
It is generally known to utilize a side reaction when the above metal is immersed in a plating bath and spontaneously dissolved.

【0036】イオウを含有する低分子有機化合物として
は各種の構造のものが有効であるが、芳香族スルホン酸
塩、特にナフタレントリスルホン酸ナトリウムが好まし
い。
As the low molecular weight organic compound containing sulfur, those having various structures are effective, but aromatic sulfonates, particularly sodium naphthalene trisulfonate are preferable.

【0037】めっき膜中のイオウは結晶の粒界に偏析し
て粒子成長を妨げたり、内部応力低減に効果があると考
えられる。イオウの供給源は浴中に含まれるイオウを含
有する低分子有機化合物である。
It is considered that sulfur in the plating film is segregated at the grain boundaries of the crystals to hinder grain growth, and is effective in reducing internal stress. The source of sulfur is a low molecular weight organic compound containing sulfur contained in the bath.

【0038】また、めっき浴中に不飽和アルコールを含
有することも好ましい。とくにアセチレン結合を有する
低分子アルコールが好ましく、最も低分子な化合物はプ
ロパギルアルコールである。
It is also preferable that the plating bath contains unsaturated alcohol. Particularly, a low molecular weight alcohol having an acetylene bond is preferable, and the lowest molecular weight compound is propargyl alcohol.

【0039】この不飽和アルコールもめっき膜の各種の
特性向上に効果があるが、そのメカニズムは未知な部分
が多い。膜中にCが100〜2000ppm含まれるこ
とがあるが、その供給源の1つは不飽和アルコールであ
ると考えられている。
This unsaturated alcohol is also effective in improving various characteristics of the plating film, but its mechanism is unknown in many cases. There may be 100-2000 ppm C in the membrane, one source of which is believed to be unsaturated alcohols.

【0040】めっき浴中には、これらの他、ほう酸等の
pH緩衝剤、硫酸アンモニウムや塩化アンモニウム等の
導電塩、ラウリル硫酸ナトリウム等の界面活性剤等、通
常の電気めっき浴に添加される成分が含有されることが
好ましい。
In the plating bath, in addition to these, components such as pH buffering agents such as boric acid, conductive salts such as ammonium sulfate and ammonium chloride, and surfactants such as sodium lauryl sulfate are added to ordinary electroplating baths. It is preferably contained.

【0041】また特に軟磁気特性を得るためにはめっき
浴中にアンモニウムイオン特に塩化アンモニウムを含有
していることが好ましい。しかしながらその原因は不明
である。
Further, in order to obtain particularly soft magnetic characteristics, it is preferable that the plating bath contains ammonium ions, especially ammonium chloride. However, the cause is unknown.

【0042】本発明の磁性薄膜は目的とする方向に一軸
異方性を付与することが好ましい。
The magnetic thin film of the present invention preferably imparts uniaxial anisotropy in a desired direction.

【0043】この方法としては磁場中成膜や成膜後の磁
場中アニールを用いることが出来る。
As this method, film formation in a magnetic field or annealing in a magnetic field after the film formation can be used.

【0044】磁場中成膜としては一定の直流磁界中で成
膜するのが一般的である。しかし本磁性薄膜では異方性
磁界Hkが大きくなりすぎることが多く、高透磁率を得
るためにはHkの適正化が要求される場合も多い。
The film formation in a magnetic field is generally performed in a constant DC magnetic field. However, in the present magnetic thin film, the anisotropic magnetic field Hk often becomes too large, and in order to obtain high magnetic permeability, it is often necessary to optimize Hk.

【0045】Hkの適正化方法としては直交磁界中成膜
や回転磁界中アニール、あるいは直流磁場中成膜時と直
流磁場中アニール時の磁界方向を面内直交させる等の方
法が有効である。
As a method for optimizing Hk, it is effective to use film formation in a perpendicular magnetic field, annealing in a rotating magnetic field, or in-plane orthogonalization of the magnetic field directions during film formation in a DC magnetic field and annealing in a DC magnetic field.

【0046】直交磁界中成膜の場合には、磁場をコイル
で発生させ交互に電流を印加することで可能である。ま
た永久磁石を用いる場合には陰極を90°回転させるこ
とで可能となる。
In the case of film formation in an orthogonal magnetic field, it is possible to generate a magnetic field with a coil and alternately apply a current. When a permanent magnet is used, it is possible to rotate the cathode by 90 °.

【0047】また優れた磁気特性を得るのにめっき浴は
連続フィルタリングにより浴中の微粒子や水酸化物を取
り除くことが必要である。ろ過の程度としてはめっき浴
の容量をVとすると、ろ過流量としてV×0.1l/分
以上が望ましい。フィルターメッシュは用途によるが特
に微細なレジストパターン内へ成膜の場合には0.2μ
m以下が好ましい。
Further, in order to obtain excellent magnetic characteristics, it is necessary to remove fine particles and hydroxides in the plating bath by continuous filtering. As for the degree of filtration, when the capacity of the plating bath is V, the filtration flow rate is preferably V × 0.1 l / min or more. The filter mesh depends on the application, but is 0.2μ especially when forming a film in a fine resist pattern.
m or less is preferable.

【0048】陽極は微粒子除去の観点からは不溶解性の
TiPt、フェライト電極が好ましい。しかし、陽極に
おいて酸化反応が起こるのでたとえばイオン交換膜によ
り陰極部と分離することが望ましい。
The anode is preferably insoluble TiPt or ferrite electrode from the viewpoint of removing fine particles. However, since an oxidation reaction occurs at the anode, it is desirable to separate it from the cathode part by an ion exchange membrane, for example.

【0049】成膜時の電流密度は0.01A/dm2
ら5A/dm2の範囲で目的に合わせて選択すればよ
い。直流以外にもパルス電解や陰極溶解まで行う交流併
用型も可能である。特にパルス電解で電圧ゼロと電圧V
1、V2等の3種類以上の複数の電圧を印加することで
Rhの共析量に大きな差を生じさせ多層膜構造とするこ
とも可能である。ゼロ電位の際にはRhの置換反応が起
こりRh膜が成膜されていることが重要である。
The current density during film formation may be selected in the range of 0.01 A / dm 2 to 5 A / dm 2 according to the purpose. In addition to direct current, it is also possible to use an alternating current type that performs pulse electrolysis and cathode dissolution. Zero voltage and voltage V especially in pulse electrolysis
By applying a plurality of three or more kinds of voltages such as 1, V2 and the like, it is possible to make a large difference in the eutectoid amount of Rh to form a multilayer film structure. It is important that the Rh substitution reaction occurs at the zero potential and the Rh film is formed.

【0050】また外部から印加する電圧を変化させるの
ではなく、陰極の近傍にスリットや穴のある遮蔽板を置
き、これを移動することでスリット部等により局部的に
電流密度が集中した部分が、他の低電流密度部とは異な
る組成となることでも多層化は実現可能である。
Further, instead of changing the voltage applied from the outside, a shielding plate having slits or holes is placed near the cathode, and by moving this, the portion where the current density is locally concentrated due to the slit portion is removed. The multi-layering can be realized by using a composition different from that of the other low current density portions.

【0051】多層化構造の膜はそのまま使用しても良い
が、熱処理等による拡散作用を利用して均一組成膜とし
て使用することも可能である。
The multi-layered film may be used as it is, but it is also possible to use it as a uniform composition film by utilizing the diffusion effect by heat treatment or the like.

【0052】本発明のめっき浴の溶媒としては通常の水
のほかに非水系溶媒、たとえばメチルアルコール、エチ
ルアルコール、プロピレンカーバイドや溶融塩等も使用
可能である。
As the solvent for the plating bath of the present invention, non-aqueous solvents such as methyl alcohol, ethyl alcohol, propylene carbide and molten salt can be used in addition to ordinary water.

【0053】[0053]

【実施例】以下、本発明の具体的実施例を示し、本発明
をさらに詳細に説明する。
EXAMPLES The present invention will be described in more detail below by showing specific examples of the present invention.

【0054】実施例1 コーニング7059ガラス上にスパッタ法によりチタン
を50A、さらにパーマロイを500A成膜した基板を
使用した。めっき前処理として1N−塩酸(常温)に3
0秒浸積し水洗した後、以下のめっき条件にて磁性膜を
成膜した。
Example 1 A substrate in which 50 A of titanium and 500 A of permalloy were formed on a Corning 7059 glass by a sputtering method was used. 3 in 1N-hydrochloric acid (normal temperature) as a pretreatment for plating
After immersion for 0 second and washing with water, a magnetic film was formed under the following plating conditions.

【0055】めっき浴組成(1リットル中) 硫酸コバルト 0.1mol 塩化コバルト 0.1mol 硫酸鉄(2価) 0.01mol 塩化アンモニウム 10g ほう酸 40g 1、3、6−ナフタレントリスルホン酸トリナトリウム
表1参照 プロパギルアルコール 0.05ml 塩化ロジウム3水塩 表1参照
Plating bath composition (in 1 liter) Cobalt sulphate 0.1 mol Cobalt chloride 0.1 mol Iron sulphate (divalent) 0.01 mol Ammonium chloride 10 g Boric acid 40 g 1,3,6-Naphthalene trisulfonate trisodium salt See Table 1 Propagyl alcohol 0.05 ml Rhodium chloride trihydrate See Table 1

【0056】[0056]

【表1】 [Table 1]

【0057】めっき浴温度は40℃、めっき浴のpHは
2.8、電流密度は1A/dm2、めっき時間は5分間
とし、600 Oeの直流磁界を印加しながら電気めっき
を行った。
The plating bath temperature was 40 ° C., the plating bath pH was 2.8, the current density was 1 A / dm 2 , the plating time was 5 minutes, and electroplating was performed while applying a DC magnetic field of 600 Oe.

【0058】サンプルの厚さは、1μmとした。これら
のサンプルの組成を表1に示す。分析は蛍光X線分析装
置、ICP、CS計を用いた。なお、表1にはFe、R
h、およびSの含有量を示したが、残部はCoである。
The thickness of the sample was 1 μm. The compositions of these samples are shown in Table 1. For the analysis, a fluorescent X-ray analyzer, ICP and CS meter were used. In Table 1, Fe, R
Although the contents of h and S are shown, the balance is Co.

【0059】各サンプルに対し、下記の測定を行った。
結果を表に2示す。
The following measurements were performed on each sample.
The results are shown in Table 2.

【0060】[0060]

【表2】 [Table 2]

【0061】(保磁力Hc)交流B−Hトレーサーによ
り60Hzにて測定した。
(Coercive force Hc) Measured at 60 Hz with an AC BH tracer.

【0062】(飽和磁束密度Bs)VSMにより測定し
た。
(Saturation magnetic flux density Bs) Measured by VSM.

【0063】(自然電極電位)基準電極に銀/塩化銀電
極を用い、常温の0.01N−KCl溶液中で測定し
た。
(Natural Electrode Potential) Using a silver / silver chloride electrode as a reference electrode, measurement was carried out in a 0.01N-KCl solution at room temperature.

【0064】実施例2 下記めっき浴を用いて、下記表3に示すサンプルを作製
した。
Example 2 The following plating bath was used to prepare the samples shown in Table 3 below.

【0065】めっき浴組成(1リットル中) スルファミン酸コバルト 0.5mol スルファミン酸鉄 表3参照 塩化アンモニウム 10g ほう酸 40g 1、3、6−ナフタレントリスルホン酸トリナトリウム
60g プロパギルアルコール 0.05ml 塩化ロジウム3水塩 0.1g めっき浴温度は40℃、めっき浴のpHは2.8、電流
密度は、表5に示す条件でめっき時間は5分間とし、6
00 Oeの直流磁界を5秒間と15秒間それぞれ面内直
交する方向に印加した。
Plating bath composition (in 1 liter) Cobalt sulfamate 0.5 mol Iron sulfamate See Table 3 Ammonium chloride 10 g Boric acid 40 g 1,3,6-Naphthalenetrisulfonate trisodium 60 g Propagyl alcohol 0.05 ml Rhodium chloride 3 Water salt 0.1 g Plating bath temperature is 40 ° C., pH of plating bath is 2.8, current density is 5 minutes under the conditions shown in Table 5, and 6
A DC magnetic field of 00 Oe was applied for 5 seconds and 15 seconds in the directions orthogonal to each other in the plane.

【0066】得られたサンプルについて実施例1と同様
な評価を行った。結果を表3、表4に示す。
The sample thus obtained was evaluated in the same manner as in Example 1. The results are shown in Tables 3 and 4.

【0067】[0067]

【表3】 [Table 3]

【0068】[0068]

【表4】 [Table 4]

【0069】以上の実施例の結果から、本発明の効果が
明らかである。すなわち、本発明によれば、低Hcで高
耐食性な磁性薄膜が容易に得られる。
From the results of the above examples, the effect of the present invention is clear. That is, according to the present invention, a magnetic thin film having low Hc and high corrosion resistance can be easily obtained.

【0070】[0070]

【発明の効果】本発明によれば、低Hcで高耐食性な磁
性薄膜が容易に得られる。しかもめっき法のために高い
生産性が得られる。
According to the present invention, a magnetic thin film having low Hc and high corrosion resistance can be easily obtained. Moreover, high productivity can be obtained due to the plating method.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 Co、FeおよびRhを主成分とし、R
hの含有量が1〜8重量%でありSの含有量が500〜
2000ppmであることを特徴とする磁性めっき薄
膜。
1. R, which contains Co, Fe and Rh as main components,
The content of h is 1 to 8% by weight and the content of S is 500 to
A magnetic plating thin film, which is 2000 ppm.
【請求項2】 湿式めっき法により成膜されコバルトイ
オンの濃度が0.05〜5モル/l、鉄イオン濃度が
0.001〜5モル/l、pHが1.0から4.0であ
り、イオウを有する低分子有機化合物を浴中に溶解して
いることを特徴とする磁性薄膜の製造方法。
2. A film formed by a wet plating method, which has a cobalt ion concentration of 0.05 to 5 mol / l, an iron ion concentration of 0.001 to 5 mol / l, and a pH of 1.0 to 4.0. A method for producing a magnetic thin film, characterized in that a low molecular weight organic compound containing sulfur is dissolved in a bath.
JP00419292A 1992-01-13 1992-01-13 Magnetic thin film and method of manufacturing the same Expired - Lifetime JP3233963B2 (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003034891A (en) * 2001-05-18 2003-02-07 Headway Technologies Inc Method for manufacturing cobalt iron alloy and plated magnetic thin-film of cobalt iron alloy, and method for manufacturing quaternary alloy and plated magnetic thin-film of cobalt iron molybdenum alloy
US7095586B2 (en) * 2002-01-15 2006-08-22 Alps Electric Co., Ltd. Soft magnetic film having saturation magnetic flux density Bs of at least 2.0 T and magnetic head including the same
US7101633B2 (en) 2002-03-06 2006-09-05 Tdk Corporation Electroplated magnetic thin film, method of manufacturing the same, electroplating bath and thin film magnetic head
JP2017048435A (en) * 2015-09-03 2017-03-09 ローム株式会社 Composite plated film and manufacturing method thereof, magnetic device, powder module

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003034891A (en) * 2001-05-18 2003-02-07 Headway Technologies Inc Method for manufacturing cobalt iron alloy and plated magnetic thin-film of cobalt iron alloy, and method for manufacturing quaternary alloy and plated magnetic thin-film of cobalt iron molybdenum alloy
US7095586B2 (en) * 2002-01-15 2006-08-22 Alps Electric Co., Ltd. Soft magnetic film having saturation magnetic flux density Bs of at least 2.0 T and magnetic head including the same
US7101633B2 (en) 2002-03-06 2006-09-05 Tdk Corporation Electroplated magnetic thin film, method of manufacturing the same, electroplating bath and thin film magnetic head
JP2017048435A (en) * 2015-09-03 2017-03-09 ローム株式会社 Composite plated film and manufacturing method thereof, magnetic device, powder module

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