JPH05189725A - Thin-film magnetic head - Google Patents

Thin-film magnetic head

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Publication number
JPH05189725A
JPH05189725A JP287892A JP287892A JPH05189725A JP H05189725 A JPH05189725 A JP H05189725A JP 287892 A JP287892 A JP 287892A JP 287892 A JP287892 A JP 287892A JP H05189725 A JPH05189725 A JP H05189725A
Authority
JP
Japan
Prior art keywords
effect element
thin film
magnetoresistive effect
magnetization
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP287892A
Other languages
Japanese (ja)
Inventor
Takeshi Igarashi
猛 五十嵐
Atsuo Mukai
厚雄 向井
Akiyoshi Fujii
暁義 藤井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP287892A priority Critical patent/JPH05189725A/en
Publication of JPH05189725A publication Critical patent/JPH05189725A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To prevent the generation of Barkhausen noises by forming a axis of easy magnetization of a magneto-resistance effect element, which is constitut ed of three layers consisting of a ferromagnetic thin film, nonmagnetic thin film and ferromagnetic thin film, by inclining the axis of easy magnetization at a prescribed angle with its longitudinal direction, then providing high-coercive force films at both ends of the element. CONSTITUTION:The magneto-resistance effect element 2 is constituted of two layers of the ferromagnetic thin films 2a, 2b and the nonmagnetic thin film 5 which is an intermediate layer. The axis of easy magnetization of this effect element 2 is inclined by 5 to 40 deg. with its longitudinal direction and the high- coercive force films 8 are provided at both ends of the effect element 2. As a result, the axis of easy magnetization of the effect element 2 is stabilized to a desired angle by the weak magnetic field of the high-coercive force films 8, by which the anisotropic dispersion angle of the axis of easy magnetization of the effect element 2 is made smaller even if the length in the longitudinal direction (stripe direction) increases. The discontinuous points of a magnetization curve are thereby moved to the outside of an operating range and the generation of the Barkhausen noises is averted.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は強磁性体の磁気抵抗効
果を利用し、信号磁界の変化を電気抵抗の変化として検
出する磁気抵抗効果型の薄膜磁気ヘッドに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive thin film magnetic head which utilizes the magnetoresistive effect of a ferromagnetic material and detects a change in a signal magnetic field as a change in electrical resistance.

【0002】[0002]

【従来の技術】磁気抵抗効果型の薄膜磁気ヘッドは信号
磁界による強磁性薄膜の抵抗変化を両端電圧の変化とし
て検出することによって磁気記録媒体の記録内容を読み
取るものである。強磁性薄膜が信号磁界によって磁化さ
れるとき、磁化スイッチングに伴うバルタハウゼンノイ
ズを防止するため、従来より様々な提案がなされてい
る。従来の磁気抵抗効果型薄膜磁気ヘッド(以下、MR
ヘッドという。)の構成例を図4および図5に基づいて
説明する。
2. Description of the Related Art A magnetoresistive thin film magnetic head reads the recorded contents of a magnetic recording medium by detecting a resistance change of a ferromagnetic thin film due to a signal magnetic field as a change in voltage across the magnetic thin film. Various proposals have heretofore been made in order to prevent Barthausen noise accompanying magnetization switching when a ferromagnetic thin film is magnetized by a signal magnetic field. Conventional magnetoresistive thin film magnetic head (hereinafter referred to as MR
The head. ) Will be described with reference to FIGS. 4 and 5.

【0003】図4のMRヘッドは、磁気抵抗効果を有す
る金属強磁性材料と非磁性材料とを複数の層状に配置
し、信号磁界を検出するためのセンス電流による相互作
用によってバルクハウゼンノイズを除去したものであ
る。このMRヘッドの磁気抵抗効果素子22は、ガラス
等の非磁性基材21上に磁界中における蒸着法,スパッ
タ法などによって長手方向(トラック方向)に磁化容易
軸を誘導するように強磁性層であるNi−Fe薄膜22
aを成膜し、この上にSiO,SiO2 などの非磁性膜
25を10Å〜1000Åの膜厚で形成する。さらに、
Ni−Fe薄膜22bを積層したのち、エッチングによ
ってパターン化したものである。この磁気抵抗効果素子
22の両端部には電極23として導体薄膜が形成されて
いる。MRヘッドを使用する場合には磁気抵抗効果素子
22の抵抗値(信号磁界の強さ)を検出するためのセン
ス電流を流すが、磁気抵抗効果素子22を上記のような
構造にすることにより、Ni−Fe膜22a,22bの
センス電流による磁界が相互に作用し両膜とも単磁区化
される。その結果磁化スイッチングに起因するバルクハ
ウゼンノイズを抑制することができる。
In the MR head of FIG. 4, Barkhausen noise is removed by the interaction of a sense current for detecting a signal magnetic field, in which a metal ferromagnetic material having a magnetoresistive effect and a non-magnetic material are arranged in a plurality of layers. It was done. The magnetoresistive effect element 22 of this MR head is a ferromagnetic layer on a non-magnetic substrate 21 such as glass so as to induce an easy axis of magnetization in the longitudinal direction (track direction) by vapor deposition or sputtering in a magnetic field. A Ni-Fe thin film 22
a is formed, and a non-magnetic film 25 such as SiO or SiO 2 is formed thereon with a film thickness of 10Å to 1000Å. further,
The Ni-Fe thin film 22b is laminated and then patterned by etching. Conductor thin films are formed as electrodes 23 on both ends of the magnetoresistive effect element 22. When an MR head is used, a sense current for detecting the resistance value (strength of the signal magnetic field) of the magnetoresistive effect element 22 is passed, but by making the magnetoresistive effect element 22 have the above structure, The magnetic fields generated by the sense currents of the Ni-Fe films 22a and 22b interact with each other, and both films are made into a single magnetic domain. As a result, Barkhausen noise due to magnetization switching can be suppressed.

【0004】一方、図5のMRヘッドでは、バイアス磁
界と高保磁力膜によって磁気抵抗効果素子を単磁区化す
ることによりバルクハウゼンノイズを防止している。こ
のMRヘッドでは、非磁性基材31上に層間絶縁層を介
して磁気抵抗効果素子のストライプ幅方向に所望のバイ
アス磁界を印加するための導体薄膜36を形成したの
ち、単層の磁気抵抗効果素子32を積層し、その両端部
に高保磁力膜38を形成している。この高保磁力膜38
の弱磁界によって、磁気抵抗効果素子32を単磁区化し
ている。その磁化容易軸は磁気抵抗効果素子32の長手
方向に対して5°〜40°傾けた方向に設定される。こ
のように構造することにより、磁気抵抗効果素子32が
単磁区化され、さらに、磁気抵抗効果素子32の磁化容
易軸を異方性の分散角以上に傾けることになり、バルク
ハウゼンノイズを抑制することが可能となる。
On the other hand, in the MR head of FIG. 5, Barkhausen noise is prevented by making the magnetoresistive effect element into a single magnetic domain by a bias magnetic field and a high coercive force film. In this MR head, a conductor thin film 36 for applying a desired bias magnetic field in the stripe width direction of a magnetoresistive effect element is formed on a non-magnetic base material 31 via an interlayer insulating layer, and then a single-layer magnetoresistive effect is formed. The element 32 is laminated, and the high coercive force film 38 is formed on both ends thereof. This high coercive force film 38
The weak magnetic field causes the magnetoresistive effect element 32 to have a single magnetic domain. The axis of easy magnetization is set in a direction inclined by 5 ° to 40 ° with respect to the longitudinal direction of the magnetoresistive effect element 32. With this structure, the magnetoresistive effect element 32 is made into a single magnetic domain, and the easy axis of magnetization of the magnetoresistive effect element 32 is tilted at an anisotropic dispersion angle or more, thereby suppressing Barkhausen noise. It becomes possible.

【0005】以上示した従来例は基本的な構成のMRヘ
ッドであるが、金属強磁性材料で構成されたヨークによ
って磁気記録媒体の信号磁界を磁気抵抗効果素子へ導く
ヨーク型薄膜磁気ヘッドについても、その磁気抵抗効果
素子を上記のような構造にすることにより上記と同等の
効果を得ている。
Although the conventional example shown above is an MR head having a basic structure, a yoke type thin film magnetic head for guiding a signal magnetic field of a magnetic recording medium to a magnetoresistive effect element by a yoke composed of a metal ferromagnetic material is also used. With the magnetoresistive effect element having the above structure, the same effect as the above is obtained.

【0006】[0006]

【発明が解決しようとする課題】しかし、上記2例のM
Rヘッドには以下のような欠点がある。
However, the above two examples of M
The R head has the following drawbacks.

【0007】図4に示すMRヘッドの場合、一般に磁気
抵抗効果素子22の磁化容易軸の向きは、成膜以後の工
程により角度分散を生じる場合が多く、MRヘッド製造
後も磁気抵抗効果素子22の全領域で全て同じ方向に向
いているというわけではない。この磁化容易軸の分布を
磁気抵抗効果膜22a,22bの相互作用によってなく
すことは困難である。このため、信号磁界に対して磁化
スイッチングに起因するバルクハウゼンノイズを設定さ
せることになり、磁気抵抗効果素子の歩留りを大きく低
下させるという欠点があった。
In the case of the MR head shown in FIG. 4, generally, the direction of the easy axis of magnetization of the magnetoresistive effect element 22 often causes angular dispersion in the steps after the film formation, and the magnetoresistive effect element 22 is manufactured even after the MR head is manufactured. Not all areas face the same direction. It is difficult to eliminate the distribution of the easy axis of magnetization by the interaction between the magnetoresistive films 22a and 22b. Therefore, the Barkhausen noise caused by the magnetization switching is set for the signal magnetic field, and there is a drawback that the yield of the magnetoresistive effect element is significantly reduced.

【0008】一方、図5に示す磁気ヘッドの場合、磁気
抵抗効果素子32の磁化スイッチングによる磁化曲線の
不連続点を動作範囲外に移動させることができ、バルク
ハウゼンノイズの発生を回避することができる。ところ
が、DCC(ディジタルコンパクトカセット)のアナロ
グ信号のようにトラック幅の広い信号を再生するための
再生用ヘッドでは、磁気抵抗効果素子32のトラック
(ストライプ)方向の長さを長くする必要がある。磁気
抵抗効果素子32の膜厚が大きくなるとその両端部に設
けられた高保磁力膜38により印加される弱磁界が磁気
抵抗効果素子32の中央部で弱くなり、そのため磁気抵
抗効果素子の磁化容易軸の異方性の分散角が大きくなっ
てしまう。この磁化容易軸の分散により磁気抵抗効果素
子32の動作範囲内で磁化スイッチングが生じバルクハ
ウゼンノイズが発生するという欠点が生じてしまう。
On the other hand, in the case of the magnetic head shown in FIG. 5, it is possible to move the discontinuity point of the magnetization curve due to the magnetization switching of the magnetoresistive effect element 32 to the outside of the operation range, and to avoid the occurrence of Barkhausen noise. it can. However, in a reproducing head for reproducing a signal having a wide track width such as an analog signal of a DCC (Digital Compact Cassette), it is necessary to increase the length of the magnetoresistive effect element 32 in the track (stripe) direction. When the film thickness of the magnetoresistive effect element 32 becomes large, the weak magnetic field applied by the high coercive force films 38 provided at both ends of the magnetoresistive effect element 32 becomes weak at the central part of the magnetoresistive effect element 32. The anisotropic dispersion angle of becomes large. Due to the dispersion of the easy axis of magnetization, magnetization switching occurs within the operating range of the magnetoresistive effect element 32, and Barkhausen noise occurs, which is a disadvantage.

【0009】この発明は、上記の問題点を解決するため
磁気抵抗効果素子のストライプ方向の長さが長くなる場
合にもバルクハウゼンノイズの発生を防止することので
きる薄膜磁気ヘッドを提供することを目的とする。
In order to solve the above problems, the present invention provides a thin film magnetic head capable of preventing generation of Barkhausen noise even when the length of the magnetoresistive effect element in the stripe direction becomes long. To aim.

【0010】[0010]

【課題を解決するための手段】この発明は、磁気記録媒
体の信号磁界の変化を抵抗値の変化として検出する磁気
抵抗効果素子を、強磁性薄膜,非磁性薄膜,強磁性薄膜
の3層で構成するとともに、この磁気抵抗効果素子の磁
化容易軸をその長手方向に対して5°〜40°傾けて形
成し、さらにこの磁気抵抗効果素子の両端部に高保磁力
膜を設けたことを特徴とする。
According to the present invention, a magnetoresistive effect element for detecting a change in a signal magnetic field of a magnetic recording medium as a change in resistance value is composed of a ferromagnetic thin film, a non-magnetic thin film and a ferromagnetic thin film. In addition to the above structure, the easy axis of magnetization of the magnetoresistive effect element is formed to be inclined at 5 ° to 40 ° with respect to the longitudinal direction thereof, and further high coercive force films are provided at both ends of the magnetoresistive effect element. To do.

【0011】さらにこの発明は、上記発明において、前
記非磁性薄膜の組成を、前記強磁性薄膜と同等またはそ
れ以下の導電率を有する物質としたことを特徴とする。
Furthermore, the present invention is characterized in that, in the above-mentioned invention, the composition of the non-magnetic thin film is a substance having a conductivity equal to or less than that of the ferromagnetic thin film.

【0012】[0012]

【作用】この発明では、磁気抵抗効果素子を2層の強磁
性薄膜と中間層の非磁性薄膜で構成し、この磁気抵抗効
果素子の磁化容易軸をその長手方向に対して5°〜40
°傾けさらに、この磁気抵抗効果素子の両端部に高保磁
力膜を備えた。これにより、高保磁力膜の弱磁界によっ
て磁気抵抗効果素子の磁化容易軸を所望の角度に安定さ
せ、長手方向(ストライプ方向)の長さが長くなっても
磁気抵抗効果素子の磁化容易軸の異方性の分散角を小さ
くすることができ、磁化曲線の不連続点を動作範囲外に
移動させてバルクハウゼンノイズの発生を回避すること
ができる。
According to the present invention, the magnetoresistive effect element is composed of two layers of ferromagnetic thin film and the intermediate nonmagnetic thin film, and the easy axis of magnetization of this magnetoresistive effect element is 5 ° to 40 ° with respect to the longitudinal direction.
Furthermore, a high coercive force film was provided at both ends of this magnetoresistive effect element. As a result, the easy axis of magnetization of the magnetoresistive effect element is stabilized at a desired angle by the weak magnetic field of the high coercive force film, and the easy axis of magnetization of the magnetoresistive effect element varies even if the length in the longitudinal direction (stripe direction) becomes long. It is possible to reduce the dispersion angle of the directionality and move the discontinuity point of the magnetization curve to the outside of the operating range to avoid the occurrence of Barkhausen noise.

【0013】また、前記磁気抵抗効果素子における非磁
性薄膜の導電率が磁気抵抗効果素子を構成する強磁性薄
膜より低くすると、信号検出電流はそのストライプ方向
には流れないが膜厚方向には絶縁性はほとんどなく、信
号検出電流は磁気抵抗効果素子を構成する強磁性薄膜の
各々に流れ検出効率を向上することができる。
If the conductivity of the non-magnetic thin film in the magnetoresistive effect element is lower than that of the ferromagnetic thin film forming the magnetoresistive effect element, the signal detection current does not flow in the stripe direction but is insulated in the film thickness direction. The signal detection current flows through each of the ferromagnetic thin films forming the magnetoresistive element, and the detection efficiency can be improved.

【0014】[0014]

【実施例】この発明の実施例を図面を参照しながら説明
する。
Embodiments of the present invention will be described with reference to the drawings.

【0015】図1はこの発明の実施例である薄膜磁気ヘ
ッドの外観斜視図である。この薄膜磁気ヘッドは、金属
強磁性層2a,非磁性層5および金属強磁性層2bが積
層された磁気抵抗効果素子2を備えている。さらに、こ
の磁気抵抗効果素子2の両端には高保磁力膜8が形成さ
れている。この高保磁力膜8を介して磁気抵抗効果素子
2にはリード導体3が接続されている。このような薄膜
磁気ヘッドの製造は以下の工程で行う。
FIG. 1 is an external perspective view of a thin film magnetic head according to an embodiment of the present invention. This thin-film magnetic head comprises a magnetoresistive effect element 2 in which a metal ferromagnetic layer 2a, a nonmagnetic layer 5 and a metal ferromagnetic layer 2b are laminated. Further, a high coercive force film 8 is formed on both ends of the magnetoresistive effect element 2. The lead conductor 3 is connected to the magnetoresistive effect element 2 through the high coercive force film 8. The manufacturing of such a thin film magnetic head is performed in the following steps.

【0016】ガラス等の非磁性基板1上に、Ni−Fe
等の磁気抵抗効果を有する金属強磁性層2a、SiO,
SiO2 等の非磁性層5、さらに、2aと同様の金属強
磁性層2bを順次積層したのちパターニングして磁気抵
抗効果素子2を構成する。このとき、Ni−Fe等の磁
気抵抗効果を有する金属強磁性薄膜は、磁場中蒸着法な
どで所望の角度に磁化容易軸を誘導する。また、前記非
磁性層5として導電率が磁気抵抗効果薄膜の金属強磁性
材料と同等もしくはそれ以下であるNb,Ti等の高融
点金属を使用し、磁気抵抗効果素子2をイオンリミング
法などでパターニングすることも可能である。つぎに磁
気抵抗効果素子2の長手方向の両端部にメッキ法等によ
りCo−P等の高保磁力膜8を形成し、さらに磁気抵抗
効果素子に信号検出電流を流すためのリード導体部3
を、絶縁層7上に形成する。磁気抵抗効果素子2の磁化
容易軸はそのストライプ方向に対して時計回りに10°
傾けられている。
On a non-magnetic substrate 1 such as glass, Ni-Fe
Such as a metal ferromagnetic layer 2a having a magnetoresistive effect, SiO,
A non-magnetic layer 5 such as SiO 2 and a metal ferromagnetic layer 2b similar to 2a are sequentially laminated and then patterned to form a magnetoresistive effect element 2. At this time, the metallic ferromagnetic thin film having a magnetoresistive effect such as Ni-Fe induces the easy axis of magnetization at a desired angle by a magnetic field vapor deposition method or the like. Further, as the non-magnetic layer 5, a refractory metal such as Nb or Ti whose conductivity is equal to or less than that of the metal ferromagnetic material of the magnetoresistive thin film is used, and the magnetoresistive effect element 2 is formed by an ion-rimming method or the like. Patterning is also possible. Next, a high coercive force film 8 of Co-P or the like is formed on both ends in the longitudinal direction of the magnetoresistive effect element 2 by a plating method or the like, and a lead conductor portion 3 for flowing a signal detection current through the magnetoresistive effect element.
Are formed on the insulating layer 7. The easy axis of magnetization of the magnetoresistive element 2 is 10 ° clockwise with respect to the stripe direction.
Is tilted.

【0017】このような構成にすることにより、磁気抵
抗効果素子2のストライプ方向の長さが長くなる場合に
も磁気抵抗効果素子2の磁化容易軸の異方性の分散角を
小さくすることができるとともに、磁化曲線の不連続点
を磁気抵抗効果素子2の動作範囲外に移動させることが
できる。これによって、媒体読取中のバルクハウゼンノ
イズの発生を回避することができる。
With such a structure, even if the length of the magnetoresistive effect element 2 in the stripe direction becomes long, the anisotropic dispersion angle of the easy axis of magnetization of the magnetoresistive effect element 2 can be made small. In addition, the discontinuity point of the magnetization curve can be moved outside the operating range of the magnetoresistive effect element 2. This makes it possible to avoid the occurrence of Barkhausen noise during medium reading.

【0018】図2および図3はこの発明に係る他の実施
例であるヨーク型MRヘッド(YMRヘッド)を示す図
である。図2は同YMRヘッドの斜視図、図3は同YM
Rヘッドの断面図である。この図において図1のMRヘ
ッドと同一の機能を果たす部分は同一番号を付して説明
を省略する。このYMRヘッドは、下側ヨークの機能を
果たすMn−Znフェライトなどの強磁性基板11上に
磁気記録の信号磁界を磁気抵抗効果素子2へ導くための
上側ヨーク9(9a,9b)を備えている。この上側ヨ
ーク9は金属強磁性材料で構成されている。また、磁気
抵抗効果素子2と下側ヨーク(強磁性基板)11との間
にバイアス導体6が設けられている。このバイアス導体
には磁気抵抗効果素子2にバイアス磁界を印加するため
のバイアス電流が流される。このYMRヘッドにおいて
も図1のMRヘッドと同様に磁気抵抗効果素子2の磁化
容易軸はその長手方向に対して所定の角度に傾けられて
いる。
2 and 3 are views showing a yoke type MR head (YMR head) which is another embodiment according to the present invention. 2 is a perspective view of the same YMR head, and FIG. 3 is the same YM head.
It is sectional drawing of R head. In this figure, parts having the same functions as those of the MR head shown in FIG. This YMR head is provided with an upper yoke 9 (9a, 9b) for guiding a signal magnetic field of magnetic recording to the magnetoresistive effect element 2 on a ferromagnetic substrate 11 such as Mn-Zn ferrite which functions as a lower yoke. There is. The upper yoke 9 is made of a metal ferromagnetic material. A bias conductor 6 is provided between the magnetoresistive effect element 2 and the lower yoke (ferromagnetic substrate) 11. A bias current for applying a bias magnetic field to the magnetoresistive effect element 2 is passed through the bias conductor. In this YMR head as well, similar to the MR head of FIG. 1, the easy axis of magnetization of the magnetoresistive effect element 2 is inclined at a predetermined angle with respect to its longitudinal direction.

【0019】[0019]

【発明の効果】以上のようにこの発明によれば、磁気抵
抗効果素子のストライプ方向の長さが長くなる場合にも
その磁化容易軸の異方性の分散角を小さくすることがで
き、バルクハウゼンノイズの発生をなくすことができ
る。これにより、生産歩留りが向上するとともに、再生
出力信号を高品質化することが可能となる。
As described above, according to the present invention, even if the length of the magnetoresistive effect element in the stripe direction becomes long, the anisotropy dispersion angle of the easy axis of magnetization can be made small, and the bulk It is possible to eliminate the occurrence of Hausen noise. As a result, it is possible to improve the production yield and improve the quality of the reproduction output signal.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の実施例であるMRヘッドの外観斜視
FIG. 1 is an external perspective view of an MR head according to an embodiment of the present invention.

【図2】この発明の他の実施例であるヨーク型MRヘッ
ドの外観斜視図
FIG. 2 is an external perspective view of a yoke type MR head according to another embodiment of the present invention.

【図3】同ヨーク型MRヘッドの断面図FIG. 3 is a sectional view of the same yoke type MR head.

【図4】従来の薄膜磁気ヘッドを示す図FIG. 4 is a diagram showing a conventional thin film magnetic head.

【図5】従来の薄膜磁気ヘッドを示す図FIG. 5 is a diagram showing a conventional thin film magnetic head.

【符号の説明】[Explanation of symbols]

1−非磁性基板 2−磁気抵抗効果素子 2a,2b−金属強磁性薄膜 3−リード導体 5−非磁性膜 6−バイアス導体 9(9a,9b)−上側ヨーク 11−強磁性体基板(下側ヨーク) 1-non-magnetic substrate 2-magnetoresistive element 2a, 2b-metal ferromagnetic thin film 3-lead conductor 5-non-magnetic film 6-bias conductor 9 (9a, 9b) -upper yoke 11-ferromagnetic substrate (lower side yoke)

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 磁気記録媒体の信号磁界の変化を抵抗値
の変化として検出する磁気抵抗効果素子を、強磁性薄
膜,非磁性薄膜,強磁性薄膜の3層で構成するととも
に、この磁気抵抗効果素子の磁化容易軸をその長手方向
に対して5°〜40°傾けて形成し、さらにこの磁気抵
抗効果素子の両端部に高保磁力膜を設けたことを特徴と
する薄膜磁気ヘッド。
1. A magnetoresistive effect element for detecting a change in a signal magnetic field of a magnetic recording medium as a change in resistance value is constituted by three layers of a ferromagnetic thin film, a nonmagnetic thin film and a ferromagnetic thin film, and the magnetoresistive effect is obtained. A thin film magnetic head characterized in that an easy axis of magnetization of the element is formed to be inclined at an angle of 5 ° to 40 ° with respect to its longitudinal direction, and further high coercive force films are provided at both ends of the magnetoresistive effect element.
【請求項2】 前記非磁性薄膜の組成を、前記強磁性薄
膜と同等またはそれ以下の導電率を有する物質としたこ
とを特徴とする請求項1記載の薄膜磁気ヘッド。
2. The thin-film magnetic head according to claim 1, wherein the composition of the non-magnetic thin film is a substance having a conductivity equal to or lower than that of the ferromagnetic thin film.
JP287892A 1992-01-10 1992-01-10 Thin-film magnetic head Pending JPH05189725A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP287892A JPH05189725A (en) 1992-01-10 1992-01-10 Thin-film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP287892A JPH05189725A (en) 1992-01-10 1992-01-10 Thin-film magnetic head

Publications (1)

Publication Number Publication Date
JPH05189725A true JPH05189725A (en) 1993-07-30

Family

ID=11541617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP287892A Pending JPH05189725A (en) 1992-01-10 1992-01-10 Thin-film magnetic head

Country Status (1)

Country Link
JP (1) JPH05189725A (en)

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