JPH0516225Y2 - - Google Patents
Info
- Publication number
- JPH0516225Y2 JPH0516225Y2 JP1988046321U JP4632188U JPH0516225Y2 JP H0516225 Y2 JPH0516225 Y2 JP H0516225Y2 JP 1988046321 U JP1988046321 U JP 1988046321U JP 4632188 U JP4632188 U JP 4632188U JP H0516225 Y2 JPH0516225 Y2 JP H0516225Y2
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- bellows
- flange
- vapor phase
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988046321U JPH0516225Y2 (enExample) | 1988-04-06 | 1988-04-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988046321U JPH0516225Y2 (enExample) | 1988-04-06 | 1988-04-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01149474U JPH01149474U (enExample) | 1989-10-17 |
| JPH0516225Y2 true JPH0516225Y2 (enExample) | 1993-04-28 |
Family
ID=31272591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988046321U Expired - Lifetime JPH0516225Y2 (enExample) | 1988-04-06 | 1988-04-06 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0516225Y2 (enExample) |
-
1988
- 1988-04-06 JP JP1988046321U patent/JPH0516225Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01149474U (enExample) | 1989-10-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5534073A (en) | Semiconductor producing apparatus comprising wafer vacuum chucking device | |
| JP2001503840A (ja) | ガスパネル | |
| US7166170B2 (en) | Cylinder-based plasma processing system | |
| US6936102B1 (en) | SiC material, semiconductor processing equipment and method of preparing SiC material therefor | |
| JPS61291494A (ja) | 炭化珪素単結晶基板の製造方法 | |
| US6113704A (en) | Substrate-supporting device for semiconductor processing | |
| JPH0333566A (ja) | デジタルバルブ | |
| US4530818A (en) | Transparent fused silica bell for purposes relating to semiconductor technology | |
| JPH01149474U (enExample) | ||
| KR20010067190A (ko) | 웨이퍼 보우트 및 웨이퍼 보우트를 이용한 열 처리 장치 | |
| JPH032725Y2 (enExample) | ||
| CN220166271U (zh) | Hvpe石英管内壁防沉积装置 | |
| CN217997311U (zh) | 一种真空蒸镀机的快拆式晶振探头结构 | |
| JP2828708B2 (ja) | 気相成長装置 | |
| JPH0982762A (ja) | ボンディングツール | |
| JPS58195135A (ja) | フイルタホルダ | |
| JPH069753Y2 (ja) | プラズマトーチ | |
| JPS6230696A (ja) | 広禁制帯幅半導体結晶の製造方法 | |
| CN221640163U (zh) | 一种多工位工作盘结构 | |
| JPH03194920A (ja) | 気相成長装置 | |
| CN221275886U (zh) | 化学气相沉积装置 | |
| JPS6343356B2 (enExample) | ||
| JPS6027690A (ja) | 気相エピタキシヤル成長用化学反応装置 | |
| JPS6027692A (ja) | インプロセスモニタ可能な気相エピタキシヤル成長用化学反応装置 | |
| JP2830629B2 (ja) | 気相成長装置 |