JPH05160283A - Semiconductor device containing package - Google Patents

Abstract

PURPOSE:To provide a semiconductor device containing package by which a semicopnductor integrated circuit device which is contained inside normally and stably can operate for a long period by firmly attaching a metallic cover body to a metal frame body which is brazed to an insulating substrate and by realizing high reliability of hermetic sealing of a container. CONSTITUTION:In a semiconductor device containing package which consists of an insulating body 1 wherein a metal frame body 9 is brazed to an upper surface thereof and a metallic cover body 2, and a semiconductor device 4 is contained inside by attaching the metallic cover body 2 to the metal frame body 9 of the insulating substrate 1, the metal frame body 9 has a recessed part in both inner and outer sides.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a semiconductor element housing package for housing a semiconductor element.

[0002]

2. Description of the Related Art Conventionally, a semiconductor element housing package for housing a semiconductor element, particularly a semiconductor integrated circuit element such as an LSI, is generally made of an electrically insulating material such as alumina ceramics, and a semiconductor integrated circuit element is provided at a substantially central portion of its upper surface. An insulating substrate having a metallization wiring layer made of a refractory metal powder such as tungsten, molybdenum, and manganese, which is led out from the periphery of the recess to the outer peripheral edge, and the semiconductor integrated circuit element is electrically connected to an external electric circuit. It is composed of an external lead terminal brazed to the metallized wiring layer via a brazing material such as silver brazing for connecting to the The electrodes of the semiconductor integrated circuit element are bonded and fixed to the metallized wiring layer through bonding wires. After that, a metal lid is welded to the upper surface of the insulating base, and the semiconductor integrated circuit element is hermetically sealed inside the container made of the insulating base and the metal lid, thereby forming a semiconductor device as a final product. ..

A metal frame made of Kovar metal or 42 alloy is previously brazed to the upper surface of the insulating base, and a metal lid is welded to the metal frame by a seam weld method or the like. The metal lid is attached to the upper surface of the insulating base to hermetically seal the container.

The metal frame is formed by depositing a metallized metal layer made of refractory metal powder such as tungsten, molybdenum, manganese, etc. on the upper surface of the insulating substrate in advance, and then forming a metal layer made of silver solder on the metallized metal layer. The reform and the metal frame are placed one after another, and then heated to a temperature of about 800 ° C. to heat and melt the preform made of silver wax or the like to be brazed on the upper surface of the insulating substrate.

[0005]

However, in this conventional package for accommodating semiconductor elements, insulation is provided because the wettability between the Kovar metal or 42 alloy forming the metal frame and the brazing material such as silver brazing is good. When the metal frame is brazed to the upper surface of the base body via a brazing material such as silver brazing, a part of the brazing material travels along the side surface of the metal frame and crawls to the upper surface, resulting in the metal frame body The metal lid cannot be firmly welded, the reliability of hermetic sealing of the container is deteriorated, and the semiconductor integrated circuit element housed inside cannot be operated normally and stably for a long period of time. Had.

[0006]

SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and an object of the present invention is to firmly attach a metal lid to a metal frame brazed to an insulating base, thereby ensuring reliability of hermetic sealing of a container. It is an object of the present invention to provide a package for accommodating a semiconductor element, which is capable of operating a semiconductor integrated circuit element accommodated therein with high performance normally and stably for a long period of time.

[0007]

The present invention comprises an insulating base body having a metal frame body brazed on its upper surface and a metal cover body, and by attaching the metal cover body to the metal frame body of the insulating base body. In a package for accommodating a semiconductor element, which accommodates a semiconductor element inside, the metal frame body has a notch or a recess on the inner and outer surfaces.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the accompanying drawings. 1 and 2 show an embodiment of a package for housing a semiconductor device of the present invention, in which 1 is an insulating base and 2 is a metallic lid. The insulating base 1 and the metallic lid 2 constitute a container 3 for housing a semiconductor integrated circuit device.

The insulating substrate 1 has a concave portion 1a which forms a space for accommodating the semiconductor integrated circuit element 4 in the central portion of the upper surface thereof.
The semiconductor integrated circuit element 4 is attached to the bottom surface of the recess 1a through an adhesive such as resin, glass, or brazing material.

The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, and a silicon carbide sintered body. Alumina (Al ₂ O
₃ ), silica (SiO ₂ ), calcia (CaO), magnesia (M
(gO) and other raw material powders are mixed with an appropriate organic solvent and solvent to form a slurry, and a ceramic green sheet (ceramic green sheet) is obtained by applying the well-known doctor blade method and kander roll method. After that, appropriate punching process is applied to the ceramic green sheet and multiple sheets are laminated at high temperature (about 1600 ℃)
It is manufactured by firing at the temperature.

A metallized wiring layer 5 extending from the periphery of the recess 1a to the outside of the container 3 is adhered to the insulating substrate 1, and the semiconductor integrated circuit element 4 is formed around the recess 1a of the metallized wiring layer 5. Each electrode is electrically connected via a bonding wire 6, and an external lead terminal 7 connected to an external electric circuit is attached to a portion led out of the container 3 through a brazing material such as silver solder. To be done.

The metallized wiring layer 5 is made of tungsten.
(W), molybdenum (Mo), manganese (Mn), and other refractory metal powders. A metal paste obtained by adding and mixing a suitable organic solvent and a solvent to the refractory metal powder such as tungsten is well known in the art. Adopting thick film method such as screen printing method,
The ceramic green sheet serving as the insulating base 1 is adhered in advance so that the insulating base 1 is adhered and formed from the periphery of the recess 1a to the outside of the container 3.

The exposed surface of the metallized wiring layer 5 is made of nickel (Ni), gold (Au) or the like having a good conductivity and a corrosion-resistant metal by plating such as 1.0 to 20.0 μm.
The metallized wiring layer 5 can be effectively prevented from being oxidized and corroded by connecting the metallized wiring layer 5 to the bonding wire 6 and the metallized wiring layer 5 and the external lead terminals 7 are brazed to each other. The attachment becomes extremely strong. Therefore, the oxidization corrosion of the metallized wiring layer 5 is prevented, the connection between the metallized wiring layer 5 and the bonding wire 6 and the metallized wiring layer 5 and the external lead terminal are prevented.
In order to make the brazing with 7 strong, it is preferable to deposit nickel, gold or the like on the exposed surface of the metallized wiring layer 5 to a thickness of 1.0 to 20.0 μm.

The external lead terminals 7 which are brazed and attached to the metallized wiring layer 5 serve to connect the semiconductor integrated circuit element 4 housed therein to an external electric circuit, and the external lead terminals 7 are connected to the external electric circuit. The semiconductor integrated circuit element 4 housed inside is electrically connected to the external electric circuit via the metallized wiring layer 5 and the external lead terminal 7 by connecting to the.

The external lead terminal 7 is made of Kovar metal (Fe-
Ni-Co alloy), 42 alloy (Fe-Ni alloy), and other ingots (lumps) made of Kovar metal, etc., by adopting well-known metal processing methods such as rolling and punching. It is formed in a predetermined plate shape.

The insulating substrate 1 also has a metallized metal layer 8 deposited on the upper surface thereof.
A metal frame body 9 is brazed to this via a brazing material 10 such as silver brazing.

A metallized metal layer 8 on the upper surface of the insulating substrate 1
Is made of a refractory metal powder such as tungsten, molybdenum, or manganese, and is obtained by the same method as that for the metallized wiring layer 5 described above, specifically by adding and mixing an appropriate organic solvent or solvent to the refractory metal powder such as tungsten. The above metal paste is applied to the upper surface of the insulating substrate 1 by printing by applying a conventionally known screen printing method, and is baked at a high temperature to be deposited on the upper surface of the insulating substrate 1.

The metallized metal layer 8 is coated with a metal such as nickel (Ni) or gold (Au), which has good wettability with the brazing material 10 and is excellent in corrosion resistance, in a thickness of 1.0 to 20.0 by a plating method or the like.
When the metallized metal layer 8 is deposited to a thickness of μm, the oxidative corrosion of the metallized metal layer 8 can be effectively prevented, and the brazed attachment of the metallized metal layer 8 and the metal frame 9 can be made extremely strong. it can. Therefore, the metallized metal layer
It is preferable to deposit a metal having good wettability with the brazing material and excellent corrosion resistance on the surface of 8 in a thickness of 1.0 to 20.0 μm.

The metal frame 9 which is brazed to the metallized metal layer 8 via the brazing material 10 is used when the metal lid 2 made of a metal material such as Kovar metal or 42 alloy is attached to the insulating substrate 1. The metal lid 2 is attached to the insulating base 1 by acting as a base metal member of the above and by welding the metal lid 2 to the metal frame 9 by the seam weld method or the like.

The metal frame body 9 is made of a metal material such as Kovar metal or 42 alloy, and has a frame shape having recesses A near the upper and inner surfaces as shown in FIG.

A recess A provided on the inner and outer surfaces of the metal frame body 9
When brazing the metal frame body 9 to the metallized metal layer 8 of the insulating substrate 1 via the brazing material 10, it is effective that part of the brazing material 10 travels along the side surface of the metal frame body 9 and climbs to the upper surface. This prevents the brazing material 10 from adhering to the upper surface of the metal frame 9 by the recess A, and the metal lid 2 can be firmly welded to the metal frame 9. Become.

When the depth T of the recess A provided on the inner and outer surfaces of the metal frame 9 is less than 0.2 mm, it is difficult to effectively prevent the brazing material 10 from creeping up, and the metal frame 9 is prevented. When brazing to the metallized metal layer 8 of the insulating substrate 1 via the brazing material 10, there is a risk that a part of the brazing material 10 will crawl up to the upper surface of the metal frame body 9 and the depth T of the recess A. But
If it exceeds 1.0 mm, the mechanical strength of the metal frame 9 is significantly deteriorated, and if an external force is applied to the metal frame 9, the metal frame 9 is easily damaged by the external force, and the reliability of hermetic sealing of the container 3 is low. There is a risk of Therefore, it is preferable that the depth A of the concave portion A provided on the inner and outer side surfaces of the metal frame body 9 is in the range of 0.2 to 1.0 mm.

If the height H of the recess A provided on the inner and outer surfaces of the metal frame 9 is less than 0.2 mm, it will be difficult to effectively prevent the brazing material 10 from creeping up.
It is preferable that the height H be 0.2 mm or more.

Further, the metal frame 9 is a brazing material 10 such as silver braze on the metallized metal layer 8 deposited on the upper surface of the insulating substrate 1.
The preform formed into a frame shape and the metal frame body 9 are placed one after another, and then heated to a temperature of about 900 ° C., and the preform made of the brazing material 10 is heated and melted to insulate the insulating substrate 1. Is brazed to the upper surface of.

Thus, according to the package for accommodating semiconductor elements of the present invention, the semiconductor integrated circuit element 4 is attached to the bottom surface of the concave portion 1a of the insulating substrate 1 with an adhesive and each electrode of the semiconductor integrated circuit element 4 is metalized wiring layer. 5 electrically through the bonding wire 6 and then the insulating substrate
The metal lid body 2 is welded to the metal frame body 9 brazed to the upper surface of 1 by the seam weld method or the like, and the semiconductor integrated circuit element 4 is hermetically sealed inside the container 3 composed of the insulating base body 1 and the metal lid body 2. By encapsulating, a semiconductor device as a final product is obtained.

The present invention is not limited to the above-mentioned embodiment, and various modifications can be made without departing from the gist of the present invention. For example, the recess A on the inner and outer surfaces of the metal frame 9 can be formed. Instead of forming the
You may provide the notch B of 0.2 to 1.0 mm and the height h of 0.2 mm or more. In this case, the brazing material 10 is effectively prevented from creeping up at the corners of the notch B, and the brazing material 10 is not partially adhered to the upper surface of the metal frame 9.

[0027]

According to the package for accommodating semiconductor elements of the present invention, since the metal frame body to be brazed on the upper surface of the insulating base body is provided with the recessed portions or the cutout portions on the inner and outer side surfaces thereof, the metal frame body is used as the metallized metal of the insulating base body. When brazing to the layer through the brazing material, part of the brazing material does not travel along the side surface of the metal frame and crawls to the upper surface, and as a result, the metal lid is strongly welded to the metal frame. As a result, the reliability of hermetically sealing the container can be enhanced, and the semiconductor integrated circuit element housed inside can be operated normally and stably for a long period of time.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an example of a semiconductor element housing package of the present invention.

FIG. 2 is an enlarged cross-sectional view of a main part of the package shown in FIG.

FIG. 3 is an enlarged cross-sectional view of an essential part showing another embodiment of the present invention.

[Explanation of symbols]

 1 ... Insulating substrate 2 ... Metal lid 3 ... Container 5 ... Metallized wiring layer 7 ... External lead terminal 8 ... Metallized Metal layer 9 ... Metal frame 10 ... Brazing material A ... Recess B ... Notch

Claims (1)

[Claims] 1. An insulating base body having a metal frame body brazed to an upper surface thereof and a metal cover body, and a metal cover body is attached to the metal frame body of the insulating base body to accommodate a semiconductor element therein. In the package for storing the semiconductor element,
A package for accommodating a semiconductor element, wherein the metal frame body has a notch or a recess on the inner and outer surfaces.