JPH05152273A - Sheet cleaning overflow bath - Google Patents
Sheet cleaning overflow bathInfo
- Publication number
- JPH05152273A JPH05152273A JP35738191A JP35738191A JPH05152273A JP H05152273 A JPH05152273 A JP H05152273A JP 35738191 A JP35738191 A JP 35738191A JP 35738191 A JP35738191 A JP 35738191A JP H05152273 A JPH05152273 A JP H05152273A
- Authority
- JP
- Japan
- Prior art keywords
- overflow
- cleaning
- wafer
- substrate
- overflow tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体基板や液晶ガラ
ス基板等の薄板状の基板を、洗浄液を用いて一枚づつ洗
浄する枚葉式洗浄装置に用いるオーバーフロー槽に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an overflow tank used in a single-wafer cleaning apparatus for cleaning thin substrates such as semiconductor substrates and liquid crystal glass substrates one by one with a cleaning liquid.
【０００２】[0002]
【従来の技術】半導体装置もサブミクロン時代を迎える
と共に半導体基板（以下、ウエハと称する）の直径が現
在では、１５０ｍｍ〜２００ｍｍのものが主流となり、
大口径化が進んでいる。従って、一枚のウエハに対する
清浄度の向上が要求されてきている。このため従来の方
法において、複数枚のウエハを収載したキャリアを洗浄
液に投入して、複数枚のウエハを同時に洗浄する方法か
ら、図１９〜図２０に示す様なウエハを一枚づつ洗浄す
る、いわゆる枚葉式洗浄方法に移行してきた。図１９は
従来の枚葉式洗浄装置の構成図、図２０はその右側面図
で、石英ガラス、ＰＦＡ、ＰＴＦＥ、ＳｉＣ等から成る
枚葉洗浄用オーバーフロー槽Ｉと洗浄液の供給系ＩＩと
から構成され、洗浄液を収容した洗浄室１内に、図示し
ないチャッキングアームでウエハ３を浸漬し、洗浄室１
内に形成され各々ウエハ３の厚みよりやや幅広の溝を有
するウエハ保持部４に載置して保持し、循環ポンプ５に
よって洗浄液を循環させると、洗浄液はろ過フィルタ
６、三方弁８ａを通り、洗浄液の給液口７の多数の流出
口７ａから洗浄室１内に流入する。洗浄液が充満した洗
浄室１内にさらに洗浄液が流入することにより余った洗
浄液が洗浄室１の上部開口に設けられた４つの堰１ａ，
１ｂ，１ｃ，１ｄを乗り越えオーバーフローし、オーバ
ーフロー部２に流れ込む。この時、洗浄室１内に洗浄液
の上昇流を生じ、ウエハ表面３ａとウエハ裏面３ｂに付
着した汚染物質を剥離して、オーバーフローする洗浄液
と共に持ち去り、三方弁８ｂ、ポンプ５を通り、ろ過フ
ィルタ６を通して洗浄液中の汚染物質を除去し、洗浄液
のみが再び洗浄室１に戻る。上記のように処理時間洗浄
液を循環させることにより、ウエハ３が清浄化される。
なお、三方弁８ａ，８ｂは枚葉洗浄用オーバーフロー
槽Ｉへの洗浄液の供給や、排液を制御するもので、図示
しないコントローラで駆動制御される。2. Description of the Related Art With the advent of the submicron era of semiconductor devices, semiconductor substrates (hereinafter referred to as "wafers") having diameters of 150 mm to 200 mm have become mainstream.
Larger diameter is in progress. Therefore, improvement of cleanliness for one wafer has been demanded. Therefore, in the conventional method, a carrier containing a plurality of wafers is put into a cleaning liquid to simultaneously clean a plurality of wafers, and then the wafers shown in FIGS. 19 to 20 are cleaned one by one. A so-called single-wafer cleaning method has been used. FIG. 19 is a block diagram of a conventional single-wafer cleaning apparatus, and FIG. 20 is a right side view thereof, which is composed of a single-wafer cleaning overflow tank I made of quartz glass, PFA, PTFE, SiC, etc., and a cleaning liquid supply system II. The wafer 3 is immersed in the cleaning chamber 1 containing the cleaning liquid by a chucking arm (not shown).
When the cleaning liquid is circulated by the circulation pump 5 while being mounted and held on the wafer holding portion 4 formed therein and having a groove slightly wider than the thickness of the wafer 3, the cleaning liquid passes through the filter 6, the three-way valve 8a, The cleaning liquid flows into the cleaning chamber 1 from a large number of outlets 7 a of the liquid supply port 7. When the cleaning liquid further flows into the cleaning chamber 1 filled with the cleaning liquid, the remaining cleaning liquid is four weirs 1a provided at the upper opening of the cleaning chamber 1,
Overflows 1b, 1c, 1d, overflows, and flows into the overflow section 2. At this time, an ascending flow of the cleaning liquid is generated in the cleaning chamber 1, the contaminants adhering to the wafer front surface 3a and the wafer back surface 3b are separated and taken away together with the overflowing cleaning liquid, and passed through the three-way valve 8b and the pump 5 and the filter The contaminants in the cleaning liquid are removed through 6 and only the cleaning liquid returns to the cleaning chamber 1 again. The wafer 3 is cleaned by circulating the cleaning liquid for the processing time as described above.
The three-way valves 8a and 8b control the supply and drainage of the cleaning liquid to the single-wafer cleaning overflow tank I, and are drive-controlled by a controller (not shown).
【０００３】上記においてオーバーフロー槽は１基のみ
用いて説明したが、実際にはスループット（生産高）を
上げる為、数基を連設して使用される。例えば４基のオ
ーバーフロー槽を用いて拡散前洗浄をする場合、第１の
オーバーフロー槽には希フッ酸を収容し、第２と第４の
オーバーフロー槽には純水を収容し、第３のオーバーフ
ロー槽には過酸化水素水を収容して、ウエハをチャッキ
ングアームで第１のオバーフロー槽から第４のオーバー
フロー槽まで順番に投入し洗浄する。あるいは、４基各
々のオーバーフロー槽で、希フッ酸→純水→過酸化水素
水→純水の順に洗浄する。In the above description, only one overflow tank is used, but in actuality, a plurality of overflow tanks are used in series to increase the throughput (production amount). For example, when pre-diffusion cleaning is performed using four overflow tanks, dilute hydrofluoric acid is stored in the first overflow tank, pure water is stored in the second and fourth overflow tanks, and the third overflow tank is stored. Hydrogen peroxide water is stored in the bath, and wafers are sequentially charged by a chucking arm from the first overflow bath to the fourth overflow bath for cleaning. Alternatively, cleaning is performed in the order of dilute hydrofluoric acid → pure water → hydrogen peroxide solution → pure water in each of four overflow tanks.
【０００４】[0004]
【発明が解決しようとする課題】ウエハの裏面は各プロ
セス装置内で、搬送ベルトや真空チャック等との接触が
多いため汚染が著しく、従来の方法では以下に示す問題
点があった。すなわち、図１８（図２０のオーバーフロ
ー槽の一部を拡大示した図）を参照して、ウエハ３を洗
浄中、ウエハ裏面３ｂより剥離した汚染物質９が４方向
オーバーフローだと、洗浄室上部からオーバーフローし
きれずに、一部がウエハ表面３ａ側に回り込み、洗浄室
内壁面を逆流し、ウエハ表面３ａに再付着し汚染してし
まうという問題点があった。Since the back surface of the wafer is frequently contacted with a conveyor belt, a vacuum chuck or the like in each process apparatus, the contamination is remarkable, and the conventional method has the following problems. That is, referring to FIG. 18 (a diagram showing an enlarged view of a part of the overflow tank of FIG. 20), during cleaning of the wafer 3, if the contaminant 9 separated from the back surface 3b of the wafer is a four-direction overflow, it is detected from the upper part of the cleaning chamber. There is a problem in that a part of the surface of the wafer 3a does not fully overflow and flows around to the surface 3a of the wafer, flows back through the inner wall of the cleaning chamber, and reattaches to the surface 3a of the wafer to contaminate it.
【０００５】それゆえに、本発明は洗浄液により洗浄さ
れたウエハ等の基板表面が、洗浄中に再び汚染されるこ
とのない改良された枚葉洗浄用オーバーフロー槽を提供
することにある。Therefore, it is an object of the present invention to provide an improved single-wafer cleaning overflow tank in which the surface of a substrate such as a wafer cleaned by a cleaning liquid is not contaminated again during cleaning.
【０００６】[0006]
【課題を解決するための手段】本発明は上記の目的を達
成するため、洗浄液を収容した洗浄室内に、被洗浄物で
ある一枚の基板を垂直に保持し、洗浄室内底部に洗浄液
を供給すると共に、洗浄室上部よりオーバーフローさせ
て上昇流を形成し、基板を洗浄する枚葉洗浄装置に用い
るオーバーフロー槽において、基板の一面側のみからオ
ーバーフローさせる構造にしたものである。In order to achieve the above object, the present invention vertically holds a single substrate to be cleaned in a cleaning chamber containing a cleaning liquid and supplies the cleaning liquid to the bottom of the cleaning chamber. In addition, in the overflow tank used in the single-wafer cleaning apparatus for cleaning the substrate, the structure is made to overflow from the upper part of the cleaning chamber to form an upward flow, and to overflow from only one surface side of the substrate.
【０００７】また、前記上昇する洗浄液の流量（流速）
を、基板を隔てて基板の表面と裏面とで相違させ、汚染
度の高い裏面側の洗浄液の流量を表面側の流量よりも多
くなる構造にしたものである。The flow rate (flow velocity) of the rising cleaning liquid
Is made different between the front surface and the back surface of the substrate across the substrate, and the flow rate of the cleaning liquid on the back surface side, which has a high degree of contamination, is higher than the flow rate on the front surface side.
【０００８】[0008]
【作 用】本発明によれば、上記したように、オーバー
フローを基板の裏面側のみからさせるようにしたことに
より、あるいは、洗浄液の流量を基板表面側より基板裏
面側を多くしたことにより、洗浄中に汚染度の高い基板
裏面から剥離した汚染物質が、基板表面に再付着するこ
とがなく基板を清浄にすることができる。[Operation] According to the present invention, as described above, the overflow is caused only from the back surface side of the substrate, or the flow rate of the cleaning liquid is increased from the front surface side of the substrate to the back surface side of the substrate. The contaminants peeled off from the back surface of the substrate, which has a high degree of contamination, can clean the substrate without redepositing on the substrate surface.
【０００９】[0009]
【実施例】本発明を、従来例と同様ウエハの洗浄に適用
した実施例を図面により説明する。図１は本発明の第一
実施例を示す正面図、図２は図１の平面図、図３は図１
のＡ−Ａ断面図、図４は図３の一部拡大図であり、従来
例を示す図１９〜図２０と同じ部分には同一番号を付し
て説明を省略する。従来例との違いは、洗浄液のオーバ
ーフローのやり方を４方向から１方向に変えた点にあ
る。すなわち、洗浄室１の上部開口の１辺のみに堰１ａ
と溝１１から成るオーバーフロー部を設け、洗浄室１と
オーバーフローした洗浄液を一時貯留するオーバーフロ
ー液貯留室１２とが洗浄室１の壁１３を隔ててウエハの
直径方向にて隣接し、前記溝１１により連通するよう構
成した。１４はオーバーフロー液貯留室の排液口、１５
は給排液兼用口、１６は給排液兼用口１５から洗浄室１
内に流入した洗浄液を整流するための整流用多孔板で、
ウエハ３を隔てて、ウエハ表面３ａ側及びウエハ裏面３
ｂ側に各々一列縦隊に多数の孔１６ａが形成されてい
る。１７は装置に組込むための取付孔である。なお堰１
ａには多数の三角堰１ｅが設けてあるが、これは三角堰
１ｅを設けた方が、堰１ａからのオーバーフローが堰１
ａの全域にわたって均一になる為である。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is applied to cleaning a wafer as in the conventional example will be described with reference to the drawings. 1 is a front view showing a first embodiment of the present invention, FIG. 2 is a plan view of FIG. 1, and FIG.
4 is a partially enlarged view of FIG. 3, and the same parts as those of FIGS. 19 to 20 showing the conventional example are denoted by the same reference numerals and the description thereof will be omitted. The difference from the conventional example is that the method of overflow of the cleaning liquid is changed from four directions to one direction. That is, the weir 1a is provided only on one side of the upper opening of the cleaning chamber 1.
And a groove 11 are provided, and the cleaning chamber 1 and the overflow liquid storage chamber 12 for temporarily storing the overflowed cleaning liquid are adjacent to each other in the diametrical direction of the wafer with the wall 13 of the cleaning chamber 1 interposed therebetween. Configured to communicate. 14 is a drainage port of the overflow liquid storage chamber, 15
Is a supply / drainage combined port, 16 is a supply / drainage combined port 15 from the cleaning chamber 1
A rectifying perforated plate for rectifying the cleaning liquid that has flowed inside,
The wafer 3 is separated, and the wafer front surface 3a side and the wafer back surface 3 are separated.
A large number of holes 16a are formed in a single column on the side b. Reference numeral 17 is a mounting hole for being incorporated in the apparatus. Weir 1
Although a large number of triangular weirs 1e are provided in a, it is better that the triangular weirs 1e are provided so that the overflow from the weir 1a can be prevented.
This is because it becomes uniform over the entire area of a.
【００１０】次に、上記実施例の装置を用いた洗浄方法
について説明すると、洗浄液の収容された洗浄室１内
に、図示しないチャッキングアームによりウエハ３を浸
漬し、ウエハ裏面３ｂを堰１ａ側に向けてウエハ保持部
４に載置し、循環ポンプ５を作動させて洗浄液を循環さ
せると、洗浄液はろ過フィルタ６、三方弁８ａを通り洗
浄液の給排液兼用口１５から洗浄室１内に流入する。流
入した洗浄液は、整流用多孔板１６の多数の孔１６ａに
より整流されて上昇する。洗浄液が充満した洗浄室１内
にさらに洗浄液が流入することにより、余った洗浄液が
洗浄室１の堰１ａを乗り越えオーバーフローし、溝１１
を伝わってオーバーフロー液貯留室１２に流れ込む。オ
ーバーフロー液貯留室１２に一時貯留された洗浄液は排
液口１４、三方弁８ｂを通ってポンプ５に戻される。こ
の時洗浄室１内に洗浄液の上昇流を生じ、ウエハ表面３
ａとウエハ裏面３ｂに付着した汚染物質を剥離してオー
バーフローする洗浄液と共に持ち去り、ろ過フィルタ６
を通して洗浄液中の汚染物質を除去し、洗浄液のみが再
び洗浄室１に戻る。上記のように処理時間洗浄液を循環
させることによりウエハ３が清浄化される。Next, a cleaning method using the apparatus of the above embodiment will be described. The wafer 3 is immersed in a cleaning chamber 1 containing a cleaning liquid by a chucking arm (not shown), and the back surface 3b of the wafer is located on the dam 1a side. When the wafer is placed on the wafer holder 4 and the cleaning liquid is circulated by operating the circulation pump 5, the cleaning liquid passes through the filtration filter 6 and the three-way valve 8a and enters the cleaning chamber 1 from the cleaning liquid supply / discharge port 15 Inflow. The inflowing cleaning liquid is rectified and rises by the large number of holes 16 a of the rectifying porous plate 16. When the cleaning liquid further flows into the cleaning chamber 1 filled with the cleaning liquid, the excess cleaning liquid overflows the weir 1a of the cleaning chamber 1 and overflows, and the groove 11
And flows into the overflow liquid storage chamber 12. The cleaning liquid temporarily stored in the overflow liquid storage chamber 12 is returned to the pump 5 through the drain port 14 and the three-way valve 8b. At this time, an upward flow of the cleaning liquid is generated in the cleaning chamber 1, and the wafer surface 3
a and the contaminants adhering to the wafer back surface 3b are peeled off and taken away together with the overflowing cleaning liquid, and the filtration filter 6
Through, the contaminants in the cleaning liquid are removed, and only the cleaning liquid returns to the cleaning chamber 1 again. The wafer 3 is cleaned by circulating the cleaning liquid for the processing time as described above.
【００１１】次に、本発明の第２実施例について図５を
用いて説明する。本実施例は、前記第１実施例に加え、
ウエハ表面３ａ側を流れる洗浄液の流量よりも、ウエハ
裏面３ｂ側を流れる洗浄液の流量を多くしたものであ
る。すなわち、ウエハ３を洗浄室１の真ん中でウエハ保
持部４により保持すると、洗浄室１はウエハ３により、
ウエハ表面３ａと洗浄室１の内壁面とで囲まれる容積
と、ウエハ裏面３ｂと洗浄室１の内壁面とで囲まれる容
積とがほぼ等しくなるように二分される。そこで、給排
液兼用口１５に洗浄液が導入されると、整流用多孔板１
６にはウエハの直径方向と平行に、ウエハ表面３ａ側に
一列縦隊に多数の流出口１６ａと、ウエハ裏面３ｂ側に
一列縦隊に多数の流出口１６ｂとが設けられ、流出口１
６ｂの直径は流出口１６ａの直径よりも大きく形成され
ているので、洗浄液は圧力損失の小さい方へ流れようと
し流出口１６ｂ側からの方が流出口１６ａ側からよりも
多く流出し、従ってウエハ裏面３ｂ側の方がウエハ表面
３ａ側よりも多く流れるため、ウエハ裏面３ｂの方がウ
エハ表面３ａよりも早く、しかも多く洗浄される。Next, a second embodiment of the present invention will be described with reference to FIG. In this embodiment, in addition to the first embodiment,
The flow rate of the cleaning liquid flowing on the wafer back surface 3b side is higher than the flow rate of the cleaning liquid flowing on the wafer front surface 3a side. That is, when the wafer 3 is held by the wafer holder 4 in the middle of the cleaning chamber 1, the cleaning chamber 1 is
The volume surrounded by the front surface 3a of the wafer and the inner wall surface of the cleaning chamber 1 and the volume surrounded by the back surface 3b of the wafer and the inner wall surface of the cleaning chamber 1 are divided into two substantially equal parts. Therefore, when the cleaning liquid is introduced into the supply / drainage / combined port 15, the rectifying porous plate 1
In parallel with the diameter direction of the wafer, a large number of outlets 16a are provided in a single column on the wafer front surface 3a side, and a plurality of outlets 16b are arranged in a single column on the wafer back surface 3b side.
Since the diameter of 6b is formed to be larger than the diameter of the outlet 16a, the cleaning liquid tends to flow toward the side with smaller pressure loss and flows out more from the outlet 16b side than from the outlet 16a side. Since the back surface 3b side flows more than the wafer front surface 3a side, the wafer back surface 3b is cleaned earlier and more than the wafer front surface 3a.
【００１２】次に、本発明の第３実施例について図６〜
図１０を用いて説明する。図６は正面図、図７は図６の
平面図、図８は図６のＢ−Ｂ断面図、図９は図６のＣ−
Ｃ断面一部拡大図、図１０は図８の一部拡大図で、前記
第１及び第２実施例では、洗浄室１の内底部に給排液兼
用口１５と、整流用多孔板１６とを設けたが、本実施例
では、洗浄室１の内底部に２本の排液口１８と、先端が
閉じられ胴部に上方に向けて多数の流出口１９ａを有す
る１本のパイプから成り、その軸線がウエハの幅方向と
平行に取付けられた給液口１９を設けている。前記多数
の流出口１９ａは図９から明らかなように、ウエハ３を
隔ててウエハの直径方向と平行に各々一列縦隊に設けて
あり、洗浄液が給液口１９に導入されると、洗浄液が流
出口１９ａから流出し、ウエハ表面３ａ及びウエハ裏面
３ｂを伝ってほぼ平行に上昇流を形成しウエハを洗浄す
る。なお２０は排液口１８に接続された二方弁で、図示
しないコントローラで三方弁８ｂと共に駆動制御され
る。Next, a third embodiment of the present invention will be described with reference to FIGS.
This will be described with reference to FIG. 6 is a front view, FIG. 7 is a plan view of FIG. 6, FIG. 8 is a sectional view taken along line BB of FIG. 6, and FIG. 9 is C- of FIG.
FIG. 10 is a partially enlarged view of a C cross section, and FIG. 10 is a partially enlarged view of FIG. However, in this embodiment, the cleaning chamber 1 is composed of two drainage ports 18 at the inner bottom and one pipe having a plurality of outlets 19a which are closed at the tip and which are upwardly directed to the body. A liquid supply port 19 whose axis is mounted parallel to the width direction of the wafer is provided. As is apparent from FIG. 9, the plurality of outlets 19a are provided in a row in parallel with each other across the wafer 3 in parallel to the diameter direction of the wafer. When the cleaning liquid is introduced into the liquid supply port 19, the cleaning liquid flows out. The wafer is washed by flowing out from the outlet 19a and forming an ascending flow substantially parallel to the wafer front surface 3a and the wafer back surface 3b. Reference numeral 20 is a two-way valve connected to the drainage port 18, and is driven and controlled together with the three-way valve 8b by a controller (not shown).
【００１３】次に、本発明の第４実施例について図１１
〜図１２（各々第３実施例の図９及び図１０に相当する
図）を用いて説明する。本実施例は前記第３実施例に加
え、ウエハ表面３ａ側を流れる洗浄液の流量よりも、ウ
エハ裏面３ｂ側を流れる洗浄液の流量を多くしたもので
ある。すなわち、ウエハ３を洗浄室１の真ん中でウエハ
保持部４により保持すると、洗浄室１はウエハ３により
ウエハ３ａと洗浄室１の内壁面とで囲まれる容積と、ウ
エハ裏面３ｂと洗浄室１の内壁面とで囲まれる容積とが
ほぼ等しくなるように二分される。そこで、給液口１９
に洗浄液が導入されると、給液口１９にはウエハの直径
方向と平行に、ウエハ表面３ａ側に一列縦隊に多数の流
出口１９ａとウエハ裏面３ｂ側に一列縦隊に多数の流出
口１９ｂとが設けられてあり、流出口１９ｂの直径は流
出口１９ａの直径よりも大きく形成されているので、洗
浄液は圧力損失の小さい方へ流れようとし、流出口１９
ｂ側からの方が流出口１９ａ側からよりも多く流出し、
従ってウエハ裏面３ｂ側の方がウエハ表面３ａ側よりも
多く流れるため、ウエハ裏面３ｂの方がウエハ表面３ａ
よりも早く、しかも多く洗浄される。Next, a fourth embodiment of the present invention will be described with reference to FIG.
12 to FIG. 12 (each corresponding to FIGS. 9 and 10 of the third embodiment). In this embodiment, in addition to the third embodiment, the flow rate of the cleaning liquid flowing on the wafer back surface 3b side is larger than the flow rate of the cleaning liquid flowing on the wafer front surface 3a side. That is, when the wafer 3 is held by the wafer holder 4 in the center of the cleaning chamber 1, the cleaning chamber 1 is surrounded by the wafer 3 by the wafer 3 a and the inner wall surface of the cleaning chamber 1, and the wafer back surface 3 b and the cleaning chamber 1 are separated. It is divided into two so that the volume surrounded by the inner wall surface and the volume surrounded by the inner wall surface are almost equal. Therefore, the liquid supply port 19
When the cleaning liquid is introduced into the liquid supply port 19, in parallel with the diameter direction of the wafer, a large number of outlets 19a are formed in a single row on the wafer front surface 3a side and a large number of outlets 19b are formed in a single row on the wafer back surface 3b side. Is provided and the diameter of the outflow port 19b is formed larger than the diameter of the outflow port 19a.
More outflow from the b side than from the outflow port 19a side,
Therefore, since the back surface 3b of the wafer flows more than the front surface 3a of the wafer, the back surface 3b of the wafer flows toward the front surface 3a of the wafer.
Faster and more washed.
【００１４】次に、本発明の第５実施例について図１３
（第３実施例の図１０に相当する図）を用いて説明す
る。本実施例は、第３実施例の給液口１９の胴部に下方
に向けて、上方に向けた多数の流出口より少数の流出口
１９ｃを付け加えたもので、給液口１９に洗浄液が導入
されると、洗浄液が流出口１９ａから流出し上昇流を形
成すると共に、流出口１９ｃより下方にわずかに流出す
る。流出口１９ｃから洗浄液がわずかに流出することに
より、洗浄室内底部での洗浄液のよどみを無くすことが
できる。なお流出口１９ｃの直径は流出口１９ａの直径
と同等もしくは小なることが望ましい。Next, a fifth embodiment of the present invention will be described with reference to FIG.
(A diagram corresponding to FIG. 10 of the third embodiment) will be described. In the present embodiment, a small number of outlets 19c are added to the body portion of the liquid supply port 19 of the third embodiment in a downward direction, and a small number of outlets 19c are added to the upper part. When introduced, the cleaning liquid flows out of the outflow port 19a to form an ascending flow, and also slightly flows out below the outflow port 19c. Since the cleaning liquid slightly flows out from the outlet 19c, the stagnation of the cleaning liquid at the bottom of the cleaning chamber can be eliminated. The diameter of the outlet 19c is preferably equal to or smaller than the diameter of the outlet 19a.
【００１５】次に、本発明の第６実施例について図１４
（第４実施例の図１２に相当する図）を用いて説明す
る。本実施例は、第４実施例の給液口１９の胴部に下方
に向けて、上方に向けた多数の流出口１９ａ及び１９ｂ
より少数の流出口１９ｃを付け加えたもので、給液口１
９に洗浄液が導入されると、洗浄液が流出口１９ａ及び
１９ｂから流出し上昇流を形成すると共に流出口１９ｃ
よりわずかに流出する。流出口１９ｃから洗浄液がわず
かに流出することにより、第５実施例と同様、洗浄室内
底部での洗浄液のよどみを無くすことができる。なお上
記全実施例においては、ウエハ３を図示しないチャッキ
ングアームからウエハ保持部４に移載しているが、洗浄
室１にウエハ保持部４を設けず、前記チャッキングアー
ムで保持したままの状態で洗浄するようにしても良い。Next, a sixth embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIG. 12 of the fourth embodiment. In the present embodiment, a large number of outlets 19a and 19b directed downward are provided at the body portion of the liquid supply port 19 of the fourth embodiment.
With the addition of a smaller number of outlets 19c, the liquid supply port 1
When the cleaning liquid is introduced into the cleaning liquid 9, the cleaning liquid flows out from the outlets 19a and 19b to form an upward flow and the outlet 19c.
Spill slightly more. As the cleaning liquid slightly flows out from the outlet 19c, the stagnation of the cleaning liquid at the bottom of the cleaning chamber can be eliminated as in the fifth embodiment. In all of the above-mentioned embodiments, the wafer 3 is transferred from the chucking arm (not shown) to the wafer holder 4, but the wafer holder 4 is not provided in the cleaning chamber 1 and the wafer is held by the chucking arm. You may make it wash | clean in a state.
【００１６】次に、上記本発明の実施例によるとウエハ
の清浄度を高められる理由について図１５（図３のオー
バーフロー槽の一部を拡大示した図）を用いて説明す
る。洗浄室１には堰１ａと溝１１から成るオーバーフロ
ー部が上部開口の一方向のみ（この場合ウエハの裏面側
のみ）にしか設けてなく、循環ポンプ５で洗浄液を循環
させると、オーバーフローはウエハの裏面３ｂ側のみし
か生じないので、洗浄室１の上層部での流れにおいてウ
エハ表面３ａ側えの流れはほとんど生じえない。従っ
て、ウエハ裏面３ｂに付着していた汚染物質９はウエハ
表面３ａ側には逆流せず、ウエハ表面３ａ側に付着して
いた汚染物質１０と共にウエハ裏面３ｂ側からオーバー
フローされ、洗浄中にウエハ表面３ａ側に再付着するこ
とがない。しかも第２、第４、第６実施例においては洗
浄液がウエハ裏面３ｂ側の方がウエハ表面３ａ側よりも
多く流れるため、汚染度の高いウエハ裏面３ｂがウエハ
表面３ａより早くしかも多く洗浄され、ウエハ３を高い
清浄度に保つことができる。Next, the reason why the cleanliness of the wafer can be increased according to the embodiment of the present invention will be described with reference to FIG. 15 (a diagram showing an enlarged view of a part of the overflow tank of FIG. 3). The cleaning chamber 1 is provided with an overflow portion composed of the weir 1a and the groove 11 only in one direction of the upper opening (in this case, only on the back surface side of the wafer), and when the cleaning liquid is circulated by the circulation pump 5, the overflow of the wafer is caused. Since only the back surface 3b side occurs, the flow on the wafer front surface 3a side hardly occurs in the flow in the upper layer portion of the cleaning chamber 1. Therefore, the contaminant 9 adhering to the wafer back surface 3b does not flow back to the wafer front surface 3a side, but overflows from the wafer back surface 3b side together with the contaminant 10 adhering to the wafer front surface 3a side, and the wafer surface during cleaning is washed. It does not reattach to the 3a side. Moreover, in the second, fourth, and sixth embodiments, the cleaning liquid flows more on the wafer back surface 3b side than on the wafer front surface 3a side, so that the wafer back surface 3b having a high degree of contamination is cleaned faster and more than the wafer front surface 3a. The wafer 3 can be kept highly clean.
【００１７】上記実施例において、オーバーフロー槽は
１基のみ用いて説明したが、実際には３基、４基と連設
して使用される。その場合、図１６〜図１７に示すよう
にオーバーフロー液貯留室２の排液口１４が、互いに隣
接するオーバーフロー槽において重ならないよう千鳥状
に設けることが望ましい。何故なら、洗浄室１の排液口
１８が二方弁２０にチューブ２１とジョイント２２とで
接続されているのと同様、オーバーフロー液貯留室２の
排液口１４は三方弁８ｂにチューブ２３とジョイント２
４とで接続されているが、液量の関係で排液口１４は排
液口１８よりも直径が大きく、従ってジョイント２４も
ジョイント２２よりも大きくなり、オーバフロー槽を隣
接した場合ジョイント部が相互に干渉してしまい、槽間
を明けなければならないが、排液口１４を千鳥状に配置
することにより、槽間を明けることなく密接に連設でき
るからである。In the above embodiment, only one overflow tank is used for explanation, but in actuality, three overflow tanks and four overflow tanks are used in series. In that case, as shown in FIGS. 16 to 17, it is preferable that the drainage ports 14 of the overflow liquid storage chambers 2 be provided in a staggered manner so as not to overlap in the overflow tanks adjacent to each other. Because, similarly to the drain port 18 of the cleaning chamber 1 being connected to the two-way valve 20 by the tube 21 and the joint 22, the drain port 14 of the overflow liquid storage chamber 2 is connected to the three-way valve 8b and the tube 23. Joint 2
4, the drainage port 14 has a larger diameter than the drainage port 18 due to the amount of liquid, so that the joint 24 also becomes larger than the joint 22. It is necessary to open the spaces between the tanks due to the interference with the above. However, by arranging the drainage ports 14 in a staggered manner, the tanks can be closely connected without opening the spaces between the tanks.
【００１８】[0018]
【発明の効果】以上詳細に説明したように、本発明の枚
葉洗浄用オーバーフロー槽を用いればオーバーフローの
過程において、基板裏面側のみからオーバーフローさせ
たことにより、あるいは、汚染度の高い基板裏面側を流
れる洗浄液の流量を基板表面側を流れる洗浄液の流量よ
りも多くすると共に、基板裏面側のみからオーバーフロ
ーさせたことにより、基板を洗浄中に基板裏面から剥璃
した汚染物質が基板表面に再付着することがなく洗い流
され、清浄な状態で次工程に搬送することができ歩留ま
りを向上させることができる。As described above in detail, when the overflow bath for single-wafer cleaning of the present invention is used, in the process of overflow, the overflow occurs only from the back surface side of the substrate or the back surface side of the substrate having a high degree of contamination. The flow rate of the cleaning liquid flowing through the substrate is higher than the flow rate of the cleaning liquid flowing on the front surface side of the substrate, and by overflowing only from the back surface side of the substrate, contaminants peeled from the back surface of the substrate during cleaning of the substrate are reattached to the front surface of the substrate. It can be washed away without being carried out, and can be conveyed to the next step in a clean state, so that the yield can be improved.
【００１９】また、本発明の枚葉洗浄用オーバーフロー
槽を用いれば、上記効果に加え、従来の４方向オーバー
フローから一方向オーバーフローに改良したことによ
り、槽を薄く小型に製造でき、３基、４基と連設して使
用する場合にはプロセス装置全体を小さくまとめること
ができ、半導体工場の省スぺース化が計れる。If the overflow bath for single-wafer cleaning according to the present invention is used, in addition to the above-mentioned effect, the conventional 4-direction overflow is improved to a unidirectional overflow, so that the tank can be manufactured thin and small, and 3 units and 4 units can be used. When used in combination with the base, the whole process equipment can be made small, and the space of the semiconductor factory can be saved.
【図１】本発明の第１実施例を示す枚葉洗浄用オーバー
フロー槽の正面図。FIG. 1 is a front view of an overflow tank for single-wafer cleaning showing a first embodiment of the present invention.
【図２】図１の平面図。FIG. 2 is a plan view of FIG.
【図３】図１のＡ−Ａ断面図。3 is a sectional view taken along line AA of FIG.
【図４】図３の一部拡大図。FIG. 4 is a partially enlarged view of FIG.
【図５】本発明の第２実施例を示す図で、図４に相当す
る図。5 is a diagram showing a second embodiment of the present invention and is a diagram corresponding to FIG. 4. FIG.
【図６】本発明の第３実施例を示す正面図。FIG. 6 is a front view showing a third embodiment of the present invention.
【図７】図６の平面図。FIG. 7 is a plan view of FIG.
【図８】図６のＢ−Ｂ断面図。8 is a sectional view taken along line BB of FIG.
【図９】図６のＣ−Ｃ断面一部拡大図。9 is a partially enlarged view taken along the line CC of FIG.
【図１０】図８の一部拡大図。FIG. 10 is a partially enlarged view of FIG.
【図１１】本発明の第４実施例を示す図で、図９に相当
する図。FIG. 11 is a view showing a fourth embodiment of the present invention and corresponds to FIG. 9.
【図１２】本発明の第４実施例を示す図で、図１０に相
当する図。FIG. 12 is a view showing a fourth embodiment of the present invention and corresponds to FIG.
【図１３】本発明の第５実施例を示す図で、図１０に相
当する図。FIG. 13 is a view showing a fifth embodiment of the present invention and corresponds to FIG.
【図１４】本発明の第６実施例を示す図で、図１２に相
当する図。FIG. 14 is a view showing a sixth embodiment of the present invention and corresponds to FIG.
【図１５】本発明によるとウエハの清浄度を高められる
理由を説明するために、図３に示す枚葉洗浄用オーバー
フロー槽の一部を拡大示した図。FIG. 15 is an enlarged view of a part of the single-wafer cleaning overflow tank shown in FIG. 3 for explaining the reason why the cleanliness of the wafer can be improved according to the present invention.
【図１６】本発明の枚葉洗浄用オーバーフロー槽を連設
して用いる場合の説明図で、図６に相当する一部拡大
図。FIG. 16 is an explanatory view of a case where the single-wafer cleaning overflow tank of the present invention is used in series, and a partial enlarged view corresponding to FIG. 6.
【図１７】図１６の底面図。FIG. 17 is a bottom view of FIG.
【図１８】従来の枚葉洗浄用オーバーフロー槽における
問題点を説明するために、図２０を一部拡大示した図。FIG. 18 is a partially enlarged view of FIG. 20 for explaining the problems in the conventional single-wafer cleaning overflow tank.
【図１９】従来の枚葉洗浄用オーバーフロー槽を用いた
枚葉式洗浄装置の構成図。FIG. 19 is a configuration diagram of a conventional single-wafer cleaning apparatus using an overflow tank for single-wafer cleaning.
【図２０】図１９の右側面図。20 is a right side view of FIG.
１ 洗浄室 １ａ 堰 ３ ウエハ ３ａ ウエハ表面 ３ｂ ウエハ裏面 ４ ウエハ保持部 １１ 溝 １２ オーバーフロー液貯留室 １３ 壁 １４ 排液口 １５ 給排液兼用口 １６ 整流用多孔板 １６ａ 流出口 １６ｂ 流出口 １８ 排液口 １９ 給液口 １９ａ 流出口 １９ｂ 流出口 １９ｃ 流出口 DESCRIPTION OF SYMBOLS 1 Cleaning chamber 1a Weir 3 Wafer 3a Wafer surface 3b Wafer back surface 4 Wafer holding part 11 Groove 12 Overflow liquid storage chamber 13 Wall 14 Drain port 15 Feed / drain port 16 Rectifying perforated plate 16a Outlet 16b Outlet 18 Drain Port 19 Liquid supply port 19a Outlet port 19b Outlet port 19c Outlet port
───────────────────────────────────────────────────── フロントページの続き (72)発明者 上田 勉 大阪府東大阪市永和２丁目２番32号 株式 会社スガイ内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tsutomu Ueda 2-32 Nagawa, Higashiosaka City, Osaka Prefecture Sugai Co., Ltd.
Claims (13)
板を垂直に保持し、 洗浄室内底部に洗浄液を供給すると共に、洗浄室上部よ
りオーバーフローさせて上昇流を形成し、基板を洗浄す
る枚葉洗浄用オーバーフロー槽において、 （ａ）洗浄室とオーバーフローした洗浄液を貯留するオ
ーバーフロー液貯留室とが、壁を隔てて基板の直径又は
幅方向にて隣接していること、 （ｂ）堰と溝から成るオーバーフロー部が、基板の厚み
方向にて洗浄室上部開口の一方向のみに設けられている
こと、 （ｃ）前記洗浄室とオーバーフロー液貯留室とが、前記
溝で連通していること、 （ｄ）前記洗浄室内底部に、各々少なくとも一つの洗浄
液の給液口と排液口あるいは、少なくとも一つの給排液
兼用口を有すること、 （ｅ）前記オーバーフロー液貯留室の内底部に、少なく
とも一つの排液口を有すること、 を特徴とする枚葉洗浄用オーバーフロー槽。1. A substrate is cleaned by holding one substrate vertically in a cleaning chamber containing a cleaning liquid, supplying the cleaning liquid to the bottom of the cleaning chamber, and overflowing the cleaning chamber from the upper part to form an upward flow. In the overflow tank for single-wafer cleaning, (a) the cleaning chamber and the overflow liquid storage chamber that stores the overflowed cleaning liquid are adjacent to each other across the wall in the diameter or width direction of the substrate, and (b) a weir. An overflow portion including a groove is provided only in one direction of the upper opening of the cleaning chamber in the thickness direction of the substrate, and (c) the cleaning chamber and the overflow liquid storage chamber communicate with each other through the groove. (D) The bottom of the cleaning chamber has at least one liquid supply port and at least one cleaning liquid supply port, or at least one combined supply / drainage liquid port, (e) the overflow liquid storage chamber An overflow tank for single-wafer cleaning, characterized in that it has at least one drainage port at the inner bottom of the.
成したことを特徴とする請求項１の枚葉洗浄用オーバー
フロー槽。2. The overflow tank for single-wafer cleaning according to claim 1, wherein a rectifying perforated plate is formed at the bottom of the cleaning chamber.
径又は幅方向と平行に基板を隔てて各々一列縦隊に設け
られたことを特徴とする請求項２の枚葉洗浄用オーバー
フロー槽。3. The overflow tank for single-wafer cleaning according to claim 2, wherein the flow-out holes of the perforated straightening plates are provided in a single column in parallel with the substrate in a direction parallel to the diameter or width of the substrate. ..
出口の大きさを、基板を隔てて相違させたことを特徴と
する請求項３の枚葉洗浄用オーバーフロー槽4. The overflow tank for single-wafer cleaning according to claim 3, wherein the size of the plurality of outlets provided in each one-row column is different for each substrate.
方に向けた一列縦隊の流出口の大きさを、前記オーバー
フロー部に遠い方の前記上方に向けた一列縦隊の流出口
の大きさよりも大なるように形成して成ることを特徴と
する請求項４の枚葉洗浄用オーバーフロー槽。5. The size of the outlet of the one-row column facing the upper portion closer to the overflow portion is larger than the size of the outlet of the one-row column facing the upper portion farther from the overflow portion. The overflow tank for single-wafer cleaning according to claim 4, wherein the overflow tank is formed as described above.
胴部に上方に向けて多数の流出口を有する１本のパイプ
から成り、その軸線が基板の直径又は幅方向に平行に取
付けられたことを特徴とする請求項１の枚葉洗浄用オー
バーフロー槽。6. The cleaning liquid supply port is composed of a single pipe having a plurality of outlets which are closed at the tip and which are upwardly directed to the body, and the axis of which is mounted parallel to the diameter or width direction of the substrate. The overflow tank for single-wafer cleaning according to claim 1, wherein
の直径又は幅方向と平行に、基板を隔てて各々一列縦隊
に設けられたことを特徴とする請求項６の枚葉洗浄用オ
ーバーフロー槽。7. The single-wafer cleaning according to claim 6, wherein the plurality of upward outlets are provided in parallel with each other in parallel with a diameter or a width direction of the substrate, with the substrates separated from each other. Overflow tank.
出口の大きさを、基板を隔てて相違させたことを特徴と
する請求項７の枚葉洗浄用オーバーフロー槽。8. The overflow tank for single-wafer cleaning according to claim 7, wherein the size of the plurality of outlets provided in each one-row column is different for each of the substrates.
方に向けた一列縦隊の流出口の大きさを、前記オーバー
フロー部に遠い方の前記上方に向けた一列縦隊の流出口
の大きさよりも大なるように形成して成ることを特徴と
する請求項８の枚葉洗浄用オーバーフロー槽。9. The size of the outlet of the one-row column facing the upper portion closer to the overflow portion is larger than the size of the outlet of the one-row column facing the upper portion farther to the overflow portion. The overflow tank for single-wafer cleaning according to claim 8, wherein the overflow tank is formed as described above.
れ胴部に上方に向けて多数の流出口と、下方に向けて前
記上方に向けた多数の流出口よりは少数の流出口とを有
する１本のパイプから成り、その軸線が基板の直径又は
幅方向に平行に取付けられたことを特徴とする請求項１
の枚葉洗浄用オーバーフロー槽。10. The supply port for the cleaning liquid has a large number of outlets which are closed at the front end and are upward in the body, and a smaller number of outlets than the plurality of outlets which are downward. 2. A pipe having an axis, the axis of which is mounted parallel to the diameter or width direction of the substrate.
Overflow tank for single-wafer cleaning.
の直径又は幅方向と平行に、基板を隔てて各々一列縦隊
に設けられると共に、前記下方に向けた少数の流出口が
前記パイプの軸線上に一列縦隊に設けられたことを特徴
とする請求項１０の枚葉洗浄用オーバーフロー槽。11. The plurality of upwardly directed outlets are provided in parallel with each other in parallel with the diameter or width direction of the substrate, with the substrates separated, and the downwardly directed small number of outlets are provided in the pipe. The overflow tank for single-wafer cleaning according to claim 10, wherein the overflow tank is provided in a single column on the axis.
られた多数の流出口の大きさを、基板を隔てて相違させ
たことを特徴とする請求項１１の枚葉洗浄用オーバーフ
ロー槽。12. The overflow tank for single-wafer cleaning according to claim 11, wherein the size of the plurality of outlets provided in the one-row column facing upward is different for each of the substrates.
に向けた一列縦隊の流出口の大きさを、前記オーバーフ
ロー部に遠い方の前記上方に向けた一列縦隊の流出口の
大きさよりも大なるように形成して成ることを特徴とす
る請求項１２の枚葉洗浄用オーバーフロー槽。13. The size of the outlet of the one-row column facing upwards closer to the overflow portion is larger than the size of the outlet of the one-row column facing upwards farther from the overflow portion. The overflow tank for single-wafer cleaning according to claim 12, characterized in that
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35738191A JP2920165B2 (en) | 1991-11-29 | 1991-11-29 | Overflow tank for single wafer cleaning |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35738191A JP2920165B2 (en) | 1991-11-29 | 1991-11-29 | Overflow tank for single wafer cleaning |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05152273A true JPH05152273A (en) | 1993-06-18 |
| JP2920165B2 JP2920165B2 (en) | 1999-07-19 |
Family
ID=18453839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35738191A Expired - Fee Related JP2920165B2 (en) | 1991-11-29 | 1991-11-29 | Overflow tank for single wafer cleaning |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2920165B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5884644A (en) * | 1997-12-10 | 1999-03-23 | Micron Technology, Inc. | Quartz tank for wet semiconductor wafer processing |
| US5921257A (en) * | 1996-04-24 | 1999-07-13 | Steag Microtech Gmbh | Device for treating substrates in a fluid container |
| US6058947A (en) * | 1997-12-22 | 2000-05-09 | Seh America, Inc. | Contamination monitoring system |
| WO2001054181A3 (en) * | 2000-01-22 | 2002-01-03 | Ted Albert Loxley | Process and apparatus for cleaning silicon wafers |
| US6516816B1 (en) * | 1999-04-08 | 2003-02-11 | Applied Materials, Inc. | Spin-rinse-dryer |
| US6530388B1 (en) * | 2000-02-15 | 2003-03-11 | Quantum Global Technologies, Llc | Volume efficient cleaning systems |
| US6732749B2 (en) * | 2000-12-22 | 2004-05-11 | Akrion, Llc | Particle barrier drain |
| US6910487B2 (en) * | 2000-06-27 | 2005-06-28 | Imec Vzw | Method and apparatus for liquid-treating and drying a substrate |
| US6926016B1 (en) | 2001-02-15 | 2005-08-09 | Quantum Global Technologies, Llc | System for removing contaminants from semiconductor process equipment |
| US7328712B1 (en) | 2000-02-15 | 2008-02-12 | Quantum Global Technologies | Cleaning bench for removing contaminants from semiconductor process equipment |
-
1991
- 1991-11-29 JP JP35738191A patent/JP2920165B2/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5921257A (en) * | 1996-04-24 | 1999-07-13 | Steag Microtech Gmbh | Device for treating substrates in a fluid container |
| US5884644A (en) * | 1997-12-10 | 1999-03-23 | Micron Technology, Inc. | Quartz tank for wet semiconductor wafer processing |
| US6058947A (en) * | 1997-12-22 | 2000-05-09 | Seh America, Inc. | Contamination monitoring system |
| US6516816B1 (en) * | 1999-04-08 | 2003-02-11 | Applied Materials, Inc. | Spin-rinse-dryer |
| US7226514B2 (en) | 1999-04-08 | 2007-06-05 | Applied Materials, Inc. | Spin-rinse-dryer |
| WO2001054181A3 (en) * | 2000-01-22 | 2002-01-03 | Ted Albert Loxley | Process and apparatus for cleaning silicon wafers |
| US6637444B1 (en) | 2000-02-15 | 2003-10-28 | Quantum Global Technologies, Llc | Volume efficient cleaning methods |
| US6530388B1 (en) * | 2000-02-15 | 2003-03-11 | Quantum Global Technologies, Llc | Volume efficient cleaning systems |
| US7328712B1 (en) | 2000-02-15 | 2008-02-12 | Quantum Global Technologies | Cleaning bench for removing contaminants from semiconductor process equipment |
| US7427330B1 (en) | 2000-02-15 | 2008-09-23 | Quantum Global Technologies, Llc | Cleaning bench for removing contaminants from semiconductor process equipment |
| US6910487B2 (en) * | 2000-06-27 | 2005-06-28 | Imec Vzw | Method and apparatus for liquid-treating and drying a substrate |
| US6732749B2 (en) * | 2000-12-22 | 2004-05-11 | Akrion, Llc | Particle barrier drain |
| US6926016B1 (en) | 2001-02-15 | 2005-08-09 | Quantum Global Technologies, Llc | System for removing contaminants from semiconductor process equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2920165B2 (en) | 1999-07-19 |
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