WO2001054181A3 - Process and apparatus for cleaning silicon wafers - Google Patents

Process and apparatus for cleaning silicon wafers Download PDF

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Publication number
WO2001054181A3
WO2001054181A3 PCT/US2001/002119 US0102119W WO0154181A3 WO 2001054181 A3 WO2001054181 A3 WO 2001054181A3 US 0102119 W US0102119 W US 0102119W WO 0154181 A3 WO0154181 A3 WO 0154181A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafers
electropurge
micron
operations
wet processing
Prior art date
Application number
PCT/US2001/002119
Other languages
French (fr)
Other versions
WO2001054181A2 (en
Inventor
Ted Albert Loxley
Original Assignee
Ted Albert Loxley
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ted Albert Loxley filed Critical Ted Albert Loxley
Priority to EP01904990A priority Critical patent/EP1250712A2/en
Priority to JP2001553573A priority patent/JP2003522406A/en
Priority to AU2001232914A priority patent/AU2001232914A1/en
Publication of WO2001054181A2 publication Critical patent/WO2001054181A2/en
Publication of WO2001054181A3 publication Critical patent/WO2001054181A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F1/00—Electrolytic cleaning, degreasing, pickling or descaling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

An effective electropurge process and apparatus for wet processing of semiconductor wafers applies electrical charges to the wafer surface with an ample voltage sufficient to provide an effective field intensity which can substantially eliminate intolerable sub-0.05 micron 'killer' defects when making highly advanced microchips with a feature size or line width less than 0.15 micron. The process can be used with frequent voltage reversal for automated wet-batch cleaning operations using cassettes that hold 10 to 50 wafers at a time and in various other operations involving megasonic transducers, mechanical brush scrubbers, laser cleaners and CMP equipment. The electropurge process is primarily intended for Fab plants where large wafers with a diameter of 200 to 400 mm require 250 to 350 steps including many dry layering, patterning and doping operations and at least 30 wet processing steps.
PCT/US2001/002119 2000-01-22 2001-01-19 Process and apparatus for cleaning silicon wafers WO2001054181A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP01904990A EP1250712A2 (en) 2000-01-22 2001-01-19 Process and apparatus for cleaning silicon wafers
JP2001553573A JP2003522406A (en) 2000-01-22 2001-01-19 Method and apparatus for cleaning silicon wafer
AU2001232914A AU2001232914A1 (en) 2000-01-22 2001-01-19 Process and apparatus for cleaning silicon wafers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49016200A 2000-01-22 2000-01-22
US09/490,162 2000-01-22

Publications (2)

Publication Number Publication Date
WO2001054181A2 WO2001054181A2 (en) 2001-07-26
WO2001054181A3 true WO2001054181A3 (en) 2002-01-03

Family

ID=23946860

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/002119 WO2001054181A2 (en) 2000-01-22 2001-01-19 Process and apparatus for cleaning silicon wafers

Country Status (4)

Country Link
EP (1) EP1250712A2 (en)
JP (1) JP2003522406A (en)
AU (1) AU2001232914A1 (en)
WO (1) WO2001054181A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100672754B1 (en) * 2004-05-10 2007-01-22 주식회사 하이닉스반도체 Method for making semiconductor device having trench isolation
JP2006319282A (en) * 2005-05-16 2006-11-24 Fuji Electric Device Technology Co Ltd Manufacturing method of semiconductor device
CN109158373B (en) * 2018-11-09 2023-10-10 江苏德润光电科技有限公司 Intelligent belt cleaning device of polycrystalline silicon piece
CN111063609A (en) * 2019-12-18 2020-04-24 武汉百臻半导体科技有限公司 Semiconductor chip cleaning method
CN114670352B (en) * 2022-05-26 2022-08-12 广东高景太阳能科技有限公司 Real-time automatic control silicon wafer production method, system, medium and equipment

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01255226A (en) * 1988-04-04 1989-10-12 Matsushita Electric Ind Co Ltd Substrate cleaning apparatus
JPH0382029A (en) * 1989-08-24 1991-04-08 Nec Corp Wet type treatment equipment
JPH05152273A (en) * 1991-11-29 1993-06-18 Sugai:Kk Sheet cleaning overflow bath
EP0567939A2 (en) * 1992-04-29 1993-11-03 Texas Instruments Incorporated Method of removing small particles from a surface
JPH0684874A (en) * 1992-08-28 1994-03-25 Hiroshima Nippon Denki Kk Semiconductor substrate cleaning device
JPH09120952A (en) * 1995-10-25 1997-05-06 Sony Corp Surface treatment method for wafer
JPH1078649A (en) * 1996-09-03 1998-03-24 Nec Yamaguchi Ltd Cleaning device for reticle
US5887607A (en) * 1997-07-07 1999-03-30 Micron Technology, Inc. Wafer processing apparatus
JPH11288908A (en) * 1998-04-02 1999-10-19 Komatsu Ltd Method and device for cleaning semiconductor wafer and wafer cassette

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01255226A (en) * 1988-04-04 1989-10-12 Matsushita Electric Ind Co Ltd Substrate cleaning apparatus
JPH0382029A (en) * 1989-08-24 1991-04-08 Nec Corp Wet type treatment equipment
JPH05152273A (en) * 1991-11-29 1993-06-18 Sugai:Kk Sheet cleaning overflow bath
EP0567939A2 (en) * 1992-04-29 1993-11-03 Texas Instruments Incorporated Method of removing small particles from a surface
JPH0684874A (en) * 1992-08-28 1994-03-25 Hiroshima Nippon Denki Kk Semiconductor substrate cleaning device
JPH09120952A (en) * 1995-10-25 1997-05-06 Sony Corp Surface treatment method for wafer
JPH1078649A (en) * 1996-09-03 1998-03-24 Nec Yamaguchi Ltd Cleaning device for reticle
US5887607A (en) * 1997-07-07 1999-03-30 Micron Technology, Inc. Wafer processing apparatus
JPH11288908A (en) * 1998-04-02 1999-10-19 Komatsu Ltd Method and device for cleaning semiconductor wafer and wafer cassette

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 014, no. 009 (E - 870) 10 January 1990 (1990-01-10) *
PATENT ABSTRACTS OF JAPAN vol. 015, no. 254 (E - 1083) 27 June 1991 (1991-06-27) *
PATENT ABSTRACTS OF JAPAN vol. 017, no. 538 (E - 1440) 28 September 1993 (1993-09-28) *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 336 (E - 1568) 24 June 1994 (1994-06-24) *
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 09 30 September 1997 (1997-09-30) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 08 30 June 1998 (1998-06-30) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 01 31 January 2000 (2000-01-31) *

Also Published As

Publication number Publication date
WO2001054181A2 (en) 2001-07-26
EP1250712A2 (en) 2002-10-23
JP2003522406A (en) 2003-07-22
AU2001232914A1 (en) 2001-07-31

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