JPH05147957A - Production of quartz glass molded body for ultraviolet laser - Google Patents

Production of quartz glass molded body for ultraviolet laser

Info

Publication number
JPH05147957A
JPH05147957A JP28089791A JP28089791A JPH05147957A JP H05147957 A JPH05147957 A JP H05147957A JP 28089791 A JP28089791 A JP 28089791A JP 28089791 A JP28089791 A JP 28089791A JP H05147957 A JPH05147957 A JP H05147957A
Authority
JP
Japan
Prior art keywords
quartz glass
molded body
glass molded
synthetic quartz
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28089791A
Other languages
Japanese (ja)
Other versions
JP2824877B2 (en
Inventor
Masahiko Endo
政彦 遠藤
Akira Fujinoki
朗 藤ノ木
Hiroyuki Nishimura
裕幸 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Quartz Products Co Ltd
Original Assignee
Shin Etsu Quartz Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Application filed by Shin Etsu Quartz Products Co Ltd filed Critical Shin Etsu Quartz Products Co Ltd
Priority to JP3280897A priority Critical patent/JP2824877B2/en
Publication of JPH05147957A publication Critical patent/JPH05147957A/en
Application granted granted Critical
Publication of JP2824877B2 publication Critical patent/JP2824877B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B32/00Thermal after-treatment of glass products not provided for in groups C03B19/00, C03B25/00 - C03B31/00 or C03B37/00, e.g. crystallisation, eliminating gas inclusions or other impurities; Hot-pressing vitrified, non-porous, shaped glass products

Abstract

PURPOSE:To provide a synthetic quartz glass molded body having high transmittance to light having <=200nm wavelength without deteriorating homogeneity for excimer laser. CONSTITUTION:A synthetic quartz glass molded body free from striae in at least the direction of transmission of light is kept at a temp. within the range of 800-1500 deg.C and at least 100 DCV/cm DC voltage is impressed between opposite two faces of the molded body to produce a quartz glass molded body for excimer laser.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、紫外線、特にエキシマ
レーザーの照射に対して優れた安定性を有する光学用石
英ガラス成形体に関し、特に、エキシマレーザーを光源
とするステッパーの光学系、特にArFエキシマレーザ
ーのステッパー光学系を形成する石英ガラス成形体に好
適な、透過率に優れたエキシマレーザー用石英ガラス成
形体の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical quartz glass molding having excellent stability against irradiation of ultraviolet rays, especially excimer laser, and more particularly to an optical system of a stepper using an excimer laser as a light source, especially ArF. The present invention relates to a method for producing a quartz glass molded body for excimer laser, which is suitable for a quartz glass molded body forming a stepper optical system of an excimer laser and has excellent transmittance.

【0002】[0002]

【従来技術及び本発明が解決しようとする問題点】近
年、LSIの高集積化に伴い、ウエハー上に集積回路パ
ターンを描画する光リソグラフィー技術においても、サ
ブミクロン単位の描画技術が要求されており、より微細
な線幅描画を行うために、露光系の光源の短波長化が進
められてきている。特に最近では、露光用の光源として
KrFエキシマレーザー光(波長248nm)及びAr
Fエキシマレーザー光(波長193nm)が考えられ、
光学部材として用いられるガラス材料においても、25
0nm以下の波長の光の透過性がきわめて重要な特性と
して注目されている。
2. Description of the Related Art In recent years, with the high integration of LSIs, a submicron unit drawing technique is required for an optical lithography technique for drawing an integrated circuit pattern on a wafer. In order to perform finer line width drawing, the wavelength of the light source of the exposure system has been shortened. Particularly recently, KrF excimer laser light (wavelength 248 nm) and Ar are used as light sources for exposure.
F excimer laser light (wavelength 193 nm) is considered,
Even in glass materials used as optical members, 25
The transparency of light having a wavelength of 0 nm or less is drawing attention as an extremely important characteristic.

【0003】一般的には、この波長領域において十分な
透過性を示す材料は、ガラスとしては、石英ガラス以外
になく、石英ガラスにおいても四塩化珪素等を火炎加水
分解して製造される、いわゆる合成石英ガラスでなけれ
ば、実質的に十分な透過率を与えない。一方で、エキシ
マレーザーステッパーにおける光学系に使用されるレン
ズ等の光学部品を構成するガラス材料には、均一な像を
得るためにきわめて厳密な均質性が要求され、かかる均
質性を合成石英ガラス材料に付与するためには、均質化
工程及びアニール工程等の非常に長時間を要する工程が
必要とされる。更に一般的には、合成石英ガラス材料を
望ましい形状に成形する成形工程も工業上は必要とな
る。
Generally, a material exhibiting sufficient transmissivity in this wavelength range is not only glass as quartz glass but also quartz glass is produced by flame hydrolysis of silicon tetrachloride or the like. Unless it is a synthetic quartz glass, it does not give a substantially sufficient transmittance. On the other hand, glass materials that make up optical components such as lenses used in optical systems in excimer laser steppers require extremely strict homogeneity in order to obtain a uniform image. In order to apply to the above, a process requiring a very long time such as a homogenizing process and an annealing process is required. Further, in general, a molding step for molding a synthetic quartz glass material into a desired shape is industrially necessary.

【0004】この合成石英ガラスに均質性を与えるため
に行われる処理工程並びに成形工程は、高温で長時間に
亘って行われるために、均質化された合成石英ガラス成
形体は、処理工程及び成形工程における雰囲気、治具、
炉材等から汚染され、合成石英ガラスの紫外線透過性を
劣化させる結果となっている。このような工程による合
成石英ガラスの汚染は、合成石英ガラスの、特に真空紫
外領域(波長200nm以下)の透過率を著しく低下さ
せ、エキシマレーザー光の中でも、特に波長の短いAr
Fエキシマレーザーを光源とするステッパーの光学系で
は深刻な問題である。
Since the processing step and molding step performed to impart homogeneity to this synthetic quartz glass are carried out at a high temperature for a long time, the homogenized synthetic quartz glass molded article is processed and shaped. Atmosphere in process, jig,
Contamination from the furnace material and the like results in deterioration of the ultraviolet light transmittance of the synthetic quartz glass. Contamination of the synthetic quartz glass due to such a step significantly reduces the transmittance of the synthetic quartz glass, particularly in the vacuum ultraviolet region (wavelength of 200 nm or less), and even in the excimer laser light, the wavelength of Ar having a particularly short wavelength is reduced.
This is a serious problem in the optical system of a stepper using an F excimer laser as a light source.

【0005】この様な工程における合成石英ガラス成形
体の汚染を減じさせる努力は継続して行われているが、
高温での熱処理に用いられる炉材や治具は、合成石英ガ
ラスを汚染するアルミナ、ジルコニア、グラファイト等
の材料で形成されており、また200nm以下の波長の
光の透過率は、合成石英ガラス成形体の僅かな汚染によ
っても著しく低下するために、均質性を付与した石英ガ
ラスのこの領域での透過率はステッパー光学系において
望まれる基準を満足してはいない。
Although efforts have been made to reduce the pollution of the synthetic quartz glass molded body in such a process,
The furnace materials and jigs used for heat treatment at high temperature are made of materials such as alumina, zirconia and graphite that contaminate synthetic quartz glass, and the transmittance of light with a wavelength of 200 nm or less is synthetic quartz glass molding. The transmittance in this region of the homogenized quartz glass does not meet the criteria desired in stepper optics, since even slight contamination of the body leads to a significant reduction.

【0006】[0006]

【課題を解決するための手段】本発明は、エキシマレー
ザー光学系用として必要な均質性を与えるための均質化
処理及び成形処理が施され、エキシマレーザー用の均質
性を有する合成石英ガラス成形体について、均質性を損
なうことなしに200nm以下の波長の光の透過率を回
復させる方法を提供することを目的としている。即ち、
本発明は、少なくとも光透過方向に脈理が存在しない合
成石英ガラス成形体を800℃乃至1500℃の範囲内
の温度に保持しながら、該ガラス成形体の相対する2つ
の面に、少なくとも100DCV/cmの直流電圧を印
加することを特徴とするエキシマレーザー用石英ガラス
成形体の製造方法にある。
DISCLOSURE OF THE INVENTION The present invention is a synthetic quartz glass molding having homogeneity for excimer laser, which has been subjected to homogenization treatment and molding treatment for imparting homogeneity necessary for an excimer laser optical system. With respect to the above, it is an object of the present invention to provide a method for recovering the transmittance of light having a wavelength of 200 nm or less without impairing the homogeneity. That is,
The present invention provides a synthetic quartz glass molded body having no striae at least in the light transmission direction at a temperature in the range of 800 ° C. to 1500 ° C. while at least 100 DCV / A method for producing a quartz glass molded body for an excimer laser, which is characterized by applying a DC voltage of cm.

【0007】本発明において、素材としては、エキシマ
ステッパー光学系を構成するに必要な光学特性、即ち、
少なくとも光が透過する方向に脈理を有さず、高度に均
質な屈折率分布を有し、かつ残留歪が存在しない、レン
ズ、プリズム等の光学部材を形成するに好適な形状、即
ち円筒状、角柱状又はこれらに類する形状の合成石英ガ
ラス成形体が使用される。これらの合成石英ガラス成形
体は、上記特性、形状に形成させるに際し、均質化工
程、成形工程、アニール工程の内、少なくとも1つの熱
処理工程を経ており、このために、波長200nm以
下、特に波長200nm〜180nmの領域に、程度の
差こそあれ、熱処理工程中の汚染による光の吸収を有し
ている。
In the present invention, as a material, the optical characteristics necessary for constructing an excimer stepper optical system, that is,
A shape that is suitable for forming optical members such as lenses and prisms that has no striae in the direction of light transmission, has a highly uniform refractive index distribution, and has no residual distortion, that is, a cylindrical shape. A synthetic quartz glass molded body having a prismatic shape or a shape similar to these is used. These synthetic quartz glass molded bodies have undergone at least one heat treatment step among the homogenization step, the molding step, and the annealing step in forming the above-mentioned characteristics and shape. In the region of up to 180 nm, it has more or less absorption of light due to contamination during the heat treatment process.

【0008】本発明の効果を最大にするためには、原材
料の純度を向上させ、また各工程における汚染を極力減
少させて、出発材の合成石英ガラス成形体において、2
00nm以下の波長の領域における光の吸収を極小とす
ることが望ましいが、本発明は、波長200nm以下の
領域における出発体の光の吸収の程度に左右されない。
In order to maximize the effect of the present invention, the purity of the raw material is improved, and the pollution in each step is reduced as much as possible, so that the synthetic quartz glass molding of the starting material is
Although it is desirable to minimize the light absorption in the wavelength region of 00 nm or less, the present invention does not depend on the degree of light absorption of the starting material in the wavelength region of 200 nm or less.

【0009】本発明者らは、このような熱処理における
汚染によって生じる200nm以下の波長の光の吸収
が、当該合成石英ガラス成形体に、所定温度において直
流の高電圧を印加することにより消失することを発見し
た。しかも、この場合、光透過率以外の、ステッパー光
学系を形成するうえで要求される光学特性は、残留歪を
除いては損なわれないことが分かった。残留歪は熱歪で
あるので、本発明の処理温度を例えば1000℃以上に
設定したような場合、冷却速度を早くすると増大して、
実用上問題となるが、本発明においては、電圧印加処理
後の冷却速度を適切に設定することにより、残留歪みを
十分に低減することができる。
The inventors of the present invention have found that absorption of light having a wavelength of 200 nm or less caused by such contamination by heat treatment disappears by applying a high DC voltage at a predetermined temperature to the synthetic quartz glass molded body. I have found Moreover, in this case, it has been found that the optical characteristics other than the light transmittance required for forming the stepper optical system are not deteriorated except for the residual distortion. Since the residual strain is a thermal strain, when the treatment temperature of the present invention is set to, for example, 1000 ° C. or higher, the cooling rate is increased to increase,
In the present invention, the residual strain can be sufficiently reduced by appropriately setting the cooling rate after the voltage application process, which is a problem in practical use.

【0010】本発明において、直流電圧の印加は、80
0℃乃至1500℃の温度範囲内の温度で行なわれるの
が望ましい。直流電圧の印加を、800℃以下の温度で
行うと、光透過率の向上が確認されず、1500℃以上
の温度で行うと、高電圧に適した絶縁体は厚さが極めて
厚くなり、構造上好ましくない。また、、印加する直流
電圧は、合成石英ガラス成形体1cmあたりの電圧勾配
が100DCV以上であることが望ましい。
In the present invention, the application of the DC voltage is 80
It is desirable to operate at a temperature within the temperature range of 0 ° C to 1500 ° C. When the DC voltage is applied at a temperature of 800 ° C. or lower, no improvement in light transmittance is confirmed, and when applied at a temperature of 1500 ° C. or higher, the insulator suitable for high voltage becomes extremely thick, and the structure It is not good. Further, the DC voltage applied preferably has a voltage gradient of 100 DCV or more per 1 cm of the synthetic quartz glass molded body.

【0011】合成石英ガラス成形体に印加する直流電圧
が100DCV/cm以下の電圧であると、十分な光透
過率の向上を、達成することが難しい。一方で、電圧は
高い程効果的であるが、3000DCV/cm以上の直
流電圧では、適切な絶縁材料の厚さが極めて厚くなり、
構造上好ましくない。本発明において、残留歪は熱処理
の冷却中に決定されるが、これは冷却速度を5℃/時間
以下として徐冷することにより、実用上問題のない程度
にまで(5nm/cm以下)低減することができる。こ
の際、電圧は印加していても、していなくても特性に影
響を与えない。
If the DC voltage applied to the synthetic quartz glass molded body is 100 DCV / cm or less, it is difficult to achieve a sufficient improvement in light transmittance. On the other hand, the higher the voltage is, the more effective it is. However, at a DC voltage of 3000 DCV / cm or more, the appropriate insulating material becomes extremely thick,
Structurally unfavorable. In the present invention, the residual strain is determined during the cooling of the heat treatment, and this is reduced to a level where there is no practical problem (5 nm / cm or less) by gradually cooling at a cooling rate of 5 ° C./hour or less. be able to. At this time, the characteristics are not affected whether or not the voltage is applied.

【0012】本発明では、電極として、高純度グラファ
イトが使用されるが、グラファイト自体が、合成石英ガ
ラス成形体に対する汚染源となるので、できる限り高純
度のものを選択し、使用に際しては、予め使用温度によ
り50〜100℃高い温度で少なくとも100時間程度
空焼きを施すことが好ましい。この電極の空焼き処理に
より、グラファイト中の不純物が除去され、本発明を効
果的に行うことができる。
In the present invention, high-purity graphite is used as the electrode. Since graphite itself is a source of contamination for the synthetic quartz glass molded body, a high-purity graphite should be selected as much as possible before use. Depending on the temperature, it is preferable to perform baking at a temperature 50 to 100 ° C. higher for at least 100 hours. Impurities in graphite are removed by the air-baking treatment of the electrode, and the present invention can be effectively carried out.

【0013】素材の残留歪については、先に述べた通り
に本処理工程の冷却中に設定しうるので出発素材の限定
から解除してもよく、この場合、屈折率分布の均質性に
ついても残留歪に限定を加えない場合には確認の方法が
無いので事実上限定出来ない。
The residual strain of the material can be set during the cooling of the present treatment step as described above, and therefore the restriction of the starting material may be removed. In this case, the homogeneity of the refractive index distribution also remains. If the distortion is not limited, there is no confirmation method, so it cannot be practically limited.

【0014】[0014]

【作用】本発明は、少なくとも光透過方向に脈理が存在
しない合成石英ガラス成形体を800℃乃至1500℃
の範囲内の温度に保持しながら、該ガラス成形体の相対
する2つの面に、少なくとも100DCV/cmの直流
電圧を印加するので、合成石英ガラス成形体の熱処理等
による汚染が電気的に除去されることになり、200n
m以下の波長の光の吸収を生じない。
According to the present invention, a synthetic quartz glass molded body having no striae at least in the light transmitting direction is provided at 800 ° C to 1500 ° C.
Since a DC voltage of at least 100 DCV / cm is applied to the two opposing surfaces of the glass molded body while maintaining the temperature within the range, contamination of the synthetic quartz glass molded body due to heat treatment or the like is electrically removed. It will be 200n
Absorption of light having a wavelength of m or less does not occur.

【0015】[0015]

【実施例】以下、本願発明の実施の態様について、例を
挙げて説明するが、本発明はこれらの例示及び説明によ
り何ら限定されるものではない。 実施例1.本例で使用する合成石英ガラス成形体は、合
成石英ガラスに均質化処理を施し、直径100mm、厚
さ30mmの円柱状に成形した後、1150℃でアニー
ルして得られたものである。この合成石英ガラス成形体
は、3方向に脈理を有さず、均質な屈折率分布を有して
おり、1cm厚さにおける屈折率の最大値と最小値の差
(Δn)は、Δn=2×10−6であった。
EXAMPLES The embodiments of the present invention will be described below with reference to examples, but the present invention is not limited to these examples and explanations. Example 1. The synthetic quartz glass compact used in this example is obtained by subjecting synthetic quartz glass to homogenization treatment, shaping it into a cylindrical shape having a diameter of 100 mm and a thickness of 30 mm, and then annealing it at 1150 ° C. This synthetic quartz glass molded body has no striae in three directions and has a uniform refractive index distribution, and the difference (Δn) between the maximum and minimum values of the refractive index at a thickness of 1 cm is Δn = It was 2 × 10 −6 .

【0016】この合成石英ガラス成形体は、研磨後、真
空紫外分光光度計により、波長240nm以下の領域に
おける光の透過率を測定して、該合成石英ガラス成形体
の両端面に高純度グラファイト電極をセットし、石英ガ
ラス管を炉芯管とする縦型管状炉内に配置した。合成石
英ガラス成形体に対する直流電圧の印加は、窒素を50
0ml/分で流しながら加熱して、温度1150℃に至
ったところで、両端に3000Vの直流電圧を印加し、
直流電圧を印加しながら5時間放置した。5時間経過し
たところで通電を停止し、5℃/時間の冷却速度でゆっ
くりと室温まで冷却した。縦型管状炉から直流電圧を印
加された合成石英ガラス成形体を取り出し、再研磨し、
光透過率ついて同様に測定した。
After polishing the synthetic quartz glass molded body, the transmittance of light in the wavelength region of 240 nm or less was measured by a vacuum ultraviolet spectrophotometer after polishing, and high purity graphite electrodes were formed on both end faces of the synthetic quartz glass molded body. Was set and placed in a vertical tubular furnace having a quartz glass tube as a furnace core tube. Applying a DC voltage to the synthetic quartz glass molded body was carried out with nitrogen at 50
While heating while flowing at 0 ml / min, when the temperature reached 1150 ° C, a DC voltage of 3000 V was applied to both ends,
It was left for 5 hours while applying a DC voltage. When 5 hours had passed, the energization was stopped and the mixture was slowly cooled to room temperature at a cooling rate of 5 ° C / hour. Remove the synthetic quartz glass molded body to which a DC voltage was applied from the vertical tubular furnace, re-polish it,
The light transmittance was measured in the same manner.

【0017】直流電圧印加後の合成石英ガラス成形体、
即ち本発明の実施例(I)と直流電圧印加前の合成石英
ガラス成形体(II)について、光透過率のチャートを
図1に示す。図1に示されるように直流電圧印加前の合
成石英ガラス成形体(II)において観察された190
nmをピークとする吸収が、直流電圧印加後の合成石英
ガラス成形体(I)では全く観察されず、特にArFエ
キシマレーザーの発振波長である193nmでの透過率
が大幅に改良されている。一方で、電圧印加処理を施し
た合成石英ガラス成形体の歪みを歪計で測定したとこ
ろ、2nm/cm以下と好適な値を示した。該石英ガラ
ス素体の屈折率分布を示す干渉縞を図2に示す。処理後
も光学部材として必要な優れた均質性を有していること
がわかる。
A synthetic quartz glass molded body after application of a DC voltage,
That is, FIG. 1 shows a chart of the light transmittance of Example (I) of the present invention and the synthetic quartz glass molded body (II) before applying a DC voltage. As shown in FIG. 1, 190 observed in the synthetic quartz glass molded body (II) before applying the DC voltage.
Absorption having a peak at nm is not observed at all in the synthetic quartz glass molded product (I) after the application of the DC voltage, and particularly the transmittance at 193 nm which is the oscillation wavelength of the ArF excimer laser is significantly improved. On the other hand, when the strain of the synthetic quartz glass compact subjected to the voltage application treatment was measured with a strain gauge, it showed a suitable value of 2 nm / cm or less. The interference fringes showing the refractive index distribution of the quartz glass body are shown in FIG. It can be seen that even after the treatment, it has excellent homogeneity required for the optical member.

【0018】比較例1 実施例で使用した合成石英ガラス成形体と同一の条件で
均質化処理を施し、成形した合成石英ガラス成形体を、
その儘、縦型管状炉に配置し、750℃で両端に300
0Vの直流電圧を印加し5時間保持後、5℃/時間の冷
却速度で室温まで冷却した。処理後の石英ガラス素体を
真空紫外分光光度計で透過率測定した結果を図3に示
す。190nmをピークとする吸収は消失していない。
Comparative Example 1 A synthetic quartz glass molded body which was subjected to homogenization treatment under the same conditions as the synthetic quartz glass molded body used in the example, and was molded,
Place it in a vertical tube furnace and keep 300 at both ends at 750 ° C.
After applying a DC voltage of 0 V for 5 hours, it was cooled to room temperature at a cooling rate of 5 ° C./hour. FIG. 3 shows the results of measuring the transmittance of the treated quartz glass body with a vacuum ultraviolet spectrophotometer. Absorption with a peak at 190 nm has not disappeared.

【0019】比較例2 実施例で使用した合成石英ガラス成形体と同一の条件で
均質化処理を施し、成形した合成石英ガラス成形体を、
その儘、縦型管状炉に配置し、1150℃で両端に25
0Vの直流電圧を印加し5時間保持後、5℃/時間の冷
却速度で室温まで冷却した。冷却後、直流電圧印加した
合成石英ガラス成形体を真空紫外分光光度計で光透過率
測定した結果を図4に示す。190nmをピークとする
吸収は消失していない。
Comparative Example 2 A synthetic quartz glass molded body obtained by subjecting to a homogenization treatment under the same conditions as the synthetic quartz glass molded body used in the example, and molding
Place it in a vertical tube furnace and put it at 1150 ° C for 25
After applying a DC voltage of 0 V for 5 hours, it was cooled to room temperature at a cooling rate of 5 ° C./hour. After cooling, the synthetic quartz glass molded body to which a DC voltage was applied was measured for light transmittance with a vacuum ultraviolet spectrophotometer. The results are shown in FIG. Absorption with a peak at 190 nm has not disappeared.

【0020】[0020]

【発明の効果】本発明は、少なくとも光透過方向に脈理
を有さない合成石英ガラス成形体を800℃乃至150
0℃の範囲内の温度に保持しながら、該ガラス成形体の
相対する2つの面に、少なくとも100DCV/cmの
直流電圧を印加するので、熱処理の過程での汚染が電気
的に除去されることになり、本発明の合成石英ガラス成
形体は従来の合成石英ガラス成形体に比して、均質な屈
折率分布を有しており、光透過性に優れている。したが
って、光学部材として、本発明のものは、従来のものに
比して、鮮明な像を得ることができる。
According to the present invention, a synthetic quartz glass molded body having no striae at least in the light transmitting direction is formed at 800 ° C. to 150 ° C.
While maintaining the temperature within the range of 0 ° C., a DC voltage of at least 100 DCV / cm is applied to the two opposite surfaces of the glass molded body, so that contamination during the heat treatment is electrically removed. The synthetic quartz glass molded body of the present invention has a uniform refractive index distribution and is excellent in light transmittance as compared with the conventional synthetic quartz glass molded body. Therefore, the optical member of the present invention can obtain a clearer image than the conventional optical member.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の直流電圧を印加した合成石
英ガラス成形体の光透過率曲線(I)と、直流電圧印加
しない合成石英ガラス成形体の光透過率曲線(II)を
示す光透過率曲線図である。
FIG. 1 shows a light transmittance curve (I) of a synthetic quartz glass molded body to which a DC voltage is applied and a light transmittance curve (II) of a synthetic quartz glass molded body to which a DC voltage is not applied according to one embodiment of the present invention. It is a light transmittance curve figure.

【図2】本発明の他の一実施例の直流電圧を印加した後
の合成石英ガラス成形体の屈折率分布が、厚さ1cmあ
たりの屈折率の最大値と最小値の差(Δn)で、Δn=
2×10−6と良好な均質性の干渉縞を示す説明図であ
る。
FIG. 2 shows a refractive index distribution of a synthetic quartz glass molded body after applying a DC voltage according to another embodiment of the present invention, showing a difference (Δn) between the maximum value and the minimum value of the refractive index per 1 cm of thickness. , Δn =
It is explanatory drawing which shows the interference fringe of 2x10 <-6> and favorable homogeneity.

【図3】比較例1の直流電圧を印加した合成石英ガラス
成形体の光透過率曲線(I)と、直流電圧印加しない合
成石英ガラス成形体の光透過率曲線(II)を示す光透
過率曲線図である。
FIG. 3 is a light transmittance showing a light transmittance curve (I) of a synthetic quartz glass molded body to which a DC voltage is applied and a light transmittance curve (II) of a synthetic quartz glass molded body to which a DC voltage is not applied in Comparative Example 1. It is a curve figure.

【図4】比較例2の直流電圧を印加した合成石英ガラス
成形体の光透過率曲線(I)と、直流電圧印加しない合
成石英ガラス成形体の光透過率曲線(II)を示す光透
過率曲線図である。
FIG. 4 is a light transmittance showing a light transmittance curve (I) of a synthetic quartz glass molded body to which a DC voltage is applied and a light transmittance curve (II) of a synthetic quartz glass molded body to which a DC voltage is not applied in Comparative Example 2. It is a curve figure.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 少なくとも光透過方向に脈理が存在しな
い合成石英ガラス成形体を800℃乃至1500℃の範
囲内の温度に保持しながら、該ガラス成形体の相対する
2つの面に、少なくとも100DCV/cmの直流電圧
を印加することを特徴とするエキシマレーザー用石英ガ
ラス成形体の製造方法。
1. A synthetic quartz glass molded body having no striae in at least the light transmission direction is maintained at a temperature within a range of 800 ° C. to 1500 ° C., and at least 100 DCV is applied to two opposite surfaces of the glass molded body. A method of manufacturing a quartz glass molded body for an excimer laser, which comprises applying a DC voltage of / cm.
【請求項2】 少なくとも光透過方向に脈理が存在しな
い合成石英ガラス成形体を800℃乃至1500℃の範
囲内の温度に保持し、該ガラス成形体の相対する2つの
面に、少なくとも100DCV/cmの直流電圧を印加
しながら、該ガラス成形体を5℃/時間以下の冷却速度
で、徐冷することを特徴とするエキシマレーザー用石英
ガラス成形体の製造方法。
2. A synthetic quartz glass molded body having no striae in at least the light transmission direction is maintained at a temperature in the range of 800 ° C. to 1500 ° C., and at least 100 DCV / A method for producing a quartz glass molded body for an excimer laser, which comprises gradually cooling the glass molded body at a cooling rate of 5 ° C./hour or less while applying a DC voltage of cm.
【請求項3】 少なくとも光透過方向に脈理が存在しな
い合成石英ガラス成形体を800℃乃至1500℃の範
囲内の温度に保持し、該ガラス成形体の相対する2つの
面に、少なくとも100DCV/cmの直流電圧を印加
した後に、該ガラス部材を5℃/時間以下の冷却速度
で、徐冷することを特徴とするエキシマレーザー用石英
ガラス成形体の製造方法。
3. A synthetic quartz glass molded body having no striae in at least the light transmission direction is kept at a temperature in the range of 800 ° C. to 1500 ° C., and at least 100 DCV / A method for producing a quartz glass molded body for an excimer laser, which comprises gradually applying a DC voltage of 10 cm and then gradually cooling the glass member at a cooling rate of 5 ° C./hour or less.
JP3280897A 1991-07-31 1991-07-31 Method for producing quartz glass compact for ultraviolet laser Expired - Fee Related JP2824877B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3280897A JP2824877B2 (en) 1991-07-31 1991-07-31 Method for producing quartz glass compact for ultraviolet laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3280897A JP2824877B2 (en) 1991-07-31 1991-07-31 Method for producing quartz glass compact for ultraviolet laser

Publications (2)

Publication Number Publication Date
JPH05147957A true JPH05147957A (en) 1993-06-15
JP2824877B2 JP2824877B2 (en) 1998-11-18

Family

ID=17631471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3280897A Expired - Fee Related JP2824877B2 (en) 1991-07-31 1991-07-31 Method for producing quartz glass compact for ultraviolet laser

Country Status (1)

Country Link
JP (1) JP2824877B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5970746A (en) * 1994-03-26 1999-10-26 Shin-Etsu Quartz Products Co., Ltd. Method for preparing silica glass article

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5970746A (en) * 1994-03-26 1999-10-26 Shin-Etsu Quartz Products Co., Ltd. Method for preparing silica glass article

Also Published As

Publication number Publication date
JP2824877B2 (en) 1998-11-18

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