JPH0513169A - Multi-color luminescence thin film el element - Google Patents
Multi-color luminescence thin film el elementInfo
- Publication number
- JPH0513169A JPH0513169A JP3047245A JP4724591A JPH0513169A JP H0513169 A JPH0513169 A JP H0513169A JP 3047245 A JP3047245 A JP 3047245A JP 4724591 A JP4724591 A JP 4724591A JP H0513169 A JPH0513169 A JP H0513169A
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- light emitting
- film
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 50
- 238000004020 luminiscence type Methods 0.000 title abstract 5
- 239000010408 film Substances 0.000 claims abstract description 59
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 2
- 230000001747 exhibiting effect Effects 0.000 claims 2
- 239000011521 glass Substances 0.000 abstract description 9
- 238000009413 insulation Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 3
- 230000007062 hydrolysis Effects 0.000 abstract description 2
- 238000006460 hydrolysis reaction Methods 0.000 abstract description 2
- 238000005401 electroluminescence Methods 0.000 description 35
- 229910052984 zinc sulfide Inorganic materials 0.000 description 14
- 239000000758 substrate Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 6
- 239000005083 Zinc sulfide Substances 0.000 description 5
- 239000011572 manganese Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- LKNRQYTYDPPUOX-UHFFFAOYSA-K trifluoroterbium Chemical compound F[Tb](F)F LKNRQYTYDPPUOX-UHFFFAOYSA-K 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- OJIKOZJGHCVMDC-UHFFFAOYSA-K samarium(iii) fluoride Chemical compound F[Sm](F)F OJIKOZJGHCVMDC-UHFFFAOYSA-K 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は交番電界印加によりＥ
Ｌ発光を呈する薄膜ＥＬ素子に係わり、特に、多色発光
薄膜ＥＬ素子の構造に関する。BACKGROUND OF THE INVENTION The present invention relates to E by applying an alternating electric field.
The present invention relates to a thin film EL element that emits L light, and more particularly to the structure of a multicolor light emitting thin film EL element.
【０００２】[0002]
【従来の技術】電界を印加すると物質が発光を発する現
象すなわちエレクトロルミネッセンス（ＥＬ）を利用し
たディスプレイに用いられる薄膜ＥＬ素子が知られてい
る。このような薄膜ＥＬ素子の２色発光のものの構造の
例を図１０を参照して説明する。図に示すように、ガラ
ス基板１の上に透明電極２を積層し、その上に第１絶縁
層３を積層し、その上に第１の発光体層４と第２の発光
体５とを所望のパターンに形成し、その上に第２絶縁層
６を積層し、第２絶縁層６の上に背面電極７を第１の発
光体層４および第２の発光体５を発光させるパターンに
形成した構造となっている。2. Description of the Related Art A thin film EL element used in a display utilizing a phenomenon in which a substance emits light when an electric field is applied, that is, electroluminescence (EL) is known. An example of the structure of such a thin film EL element that emits two colors will be described with reference to FIG. As shown in the figure, the transparent electrode 2 is laminated on the glass substrate 1, the first insulating layer 3 is laminated thereon, and the first luminous body layer 4 and the second luminous body 5 are laminated thereon. It is formed into a desired pattern, the second insulating layer 6 is laminated thereon, and the back electrode 7 is formed on the second insulating layer 6 so that the first light emitting layer 4 and the second light emitting body 5 emit light. It has a formed structure.
【０００３】上記第１の発光体層４と第２の発光体層５
とを所望のパターンに形成するには、例えば、絶縁層３
の上に第１の発光体層を蒸着あるいはスパッタ等により
成膜し、その上にフォトレジストをコートし、フォトリ
ソグラフィによりレジストの所望のパターンを有するマ
スクを形成する。その状態で第１の発光体層をエッチン
グした後、第２の発光体層を形成し、不要部分をレジス
トともに除去する。The above-mentioned first luminous body layer 4 and second luminous body layer 5
In order to form and in a desired pattern, for example, the insulating layer 3
A first light emitting layer is formed thereon by vapor deposition, sputtering or the like, a photoresist is coated thereon, and a mask having a desired resist pattern is formed by photolithography. In that state, the first light emitting layer is etched, then the second light emitting layer is formed, and unnecessary portions are removed together with the resist.
【０００４】[0004]
【発明が解決しようとする問題点】上記した従来のもの
においては、発光体層上でフォトリソグラフィ工程を行
いまた発光体のエッチングを行う。薄膜ＥＬ素子の発光
体としてＺｎＳ系、ＣａＳ系等の加水分解され易い材料
が使用されており、製造工程中に膜剥離を生じたり、ま
た、発光体内に微量の水分が含まれていても発光時の高
電界により発光体層が電気分解され、ガスの発生で膜が
剥離して発光停止となる恐れがあった。In the conventional device described above, a photolithography process is performed on the phosphor layer and the phosphor is etched. ZnS-based, CaS-based and other easily hydrolyzable materials are used as the light-emitting body of the thin-film EL element, and film peeling occurs during the manufacturing process, and even if the light-emitting body contains a small amount of water, it emits light. The high electric field at that time electrolyzed the light emitting layer, and the film might be peeled off due to the generation of gas to stop light emission.
【０００５】この発明は上記した点に鑑みてなされたも
のであって、その目的とするところは、発光体層の形成
にフォトリソグラフィやエッチングを用いることのない
多色発光薄膜ＥＬ素子の構造を提供することにある。The present invention has been made in view of the above points, and an object thereof is to provide a structure of a multicolor light emitting thin film EL element which does not use photolithography or etching for forming a light emitting layer. To provide.
【０００６】[0006]
【課題を解決するための手段】この発明の多色発光薄膜
ＥＬ素子は、透明電極と発光体層を発光させるパターン
に応じた背面電極の間に異なる発光電界強度および異な
る波長のＥＬ発光を呈する発光体層を発光電界強度の高
い順に積層し、上記発光体層の間に各発光体層を発光さ
せるパターンに応じた黒色膜を介在させたものである。The multicolor light emitting thin film EL element of the present invention exhibits different emission field strengths and different wavelengths of EL emission between the transparent electrode and the back electrode according to the pattern for emitting light from the light emitting layer. The light emitting layers are stacked in the order of high emission electric field strength, and a black film corresponding to the pattern for emitting light from each light emitting layer is interposed between the light emitting layers.
【０００７】また、前記多色発光薄膜ＥＬ素子におい
て、前記黒色膜と発光体層の間に絶縁層を設けたもので
ある。In the multicolor light emitting thin film EL element, an insulating layer is provided between the black film and the light emitting layer.
【０００８】また、前記多色発光薄膜ＥＬ素子におい
て、絶縁層の各部分の絶縁層の厚みを変えることにより
同一電圧で各発光体層を発光させるようにしたものであ
る。Further, in the above-mentioned multicolor light emitting thin film EL element, each light emitting layer is made to emit light at the same voltage by changing the thickness of the insulating layer at each portion of the insulating layer.
【０００９】[0009]
【作用】この発明の多色発光薄膜ＥＬ素子によれば、各
色の発光体層はパネル全面に積層されており、パターン
形成のためにフォトリソグラフィやエッチングを用いる
必要がない。透明電極と背面電極の間には各色の発光体
層が発光電界強度の高い順に絶縁層を介して順次積層さ
れており、透明電極と背面電極の間に印加する電圧が上
昇するにつれ背面電極側の発光体層から順次発光を開始
する。透明電極を通して発光を放射させる発光体層のパ
ターンの背面電極にその発光体層が発光しその発光体層
より透明電極側の発光体層が発光しない電圧を印加す
る。このとき背面電極側の発光体層も発光するがその光
は黒色膜に遮断されて透明電極側に放射されず目的の色
の放射が得られる。According to the multicolor light emitting thin film EL element of the present invention, the light emitting layers of the respective colors are laminated on the entire surface of the panel, and it is not necessary to use photolithography or etching for pattern formation. Between the transparent electrode and the back electrode, light emitting layers of each color are sequentially laminated via an insulating layer in the order of high emission electric field strength, and as the voltage applied between the transparent electrode and the back electrode increases, the back electrode side The light emission is sequentially started from the light emitting layer. A voltage is applied to the back electrode of the pattern of the light emitting layer that emits light through the transparent electrode so that the light emitting layer emits light and the light emitting layer on the transparent electrode side of the light emitting layer does not emit light. At this time, the light emitting layer on the back electrode side also emits light, but the light is blocked by the black film and is not emitted to the transparent electrode side, and emission of a desired color is obtained.
【００１０】また、黒色膜と発光体層の間に絶縁層を設
ければ、黒色膜をパターニングするとき発光体層を損傷
することを防止できる。Further, if an insulating layer is provided between the black film and the light emitting layer, it is possible to prevent the light emitting layer from being damaged when the black film is patterned.
【００１１】また、上記絶縁層の厚みを変化させて同一
電圧で各発光体層を発光させるようにすれば、薄膜ＥＬ
素子駆動回路の出力電圧が一定となり回路構成が簡単と
なるIf the thickness of the insulating layer is changed so that each light emitting layer emits light at the same voltage, the thin film EL
The output voltage of the element drive circuit becomes constant and the circuit configuration becomes simple.
【００１２】。[0012]
【実施例】この発明の実施例である多色発光薄膜ＥＬ素
子を図面に基づいて説明する。図１はこの発明の第１の
実施例を示す。この実施例は請求項１の多色発光薄膜Ｅ
Ｌ素子の例である。図に示すように、ガラス基板１の上
に酸化インジウム・錫膜等の透明電極２が積層されてい
る。その上に第１絶縁層３、第１の発光体層４、発光パ
ターンに応じて形成された黒色膜８、第２の発光体層
５、第２絶縁層６および背面電極７が順次積層されてい
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A multicolor light emitting thin film EL element which is an embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows a first embodiment of the present invention. This embodiment is a multicolor light emitting thin film E according to claim 1.
It is an example of an L element. As shown in the figure, a transparent electrode 2 such as an indium oxide / tin film is laminated on a glass substrate 1. A first insulating layer 3, a first light emitting layer 4, a black film 8 formed according to a light emitting pattern, a second light emitting layer 5, a second insulating layer 6 and a back electrode 7 are sequentially stacked on top of this. ing.
【００１３】第１の発光体層４は硫化亜鉛中にフッ化テ
リビウムが分散された緑色発光体（ＺｎＳ：ＴｂＦ）に
より形成されている。第２の発光体層５は硫化亜鉛中に
マンガンが分散された黄色発光体（ＺｎＳ：Ｍｎ）によ
り形成されている。ＺｎＳ：ＴｂＦの発光電界強度の方
がＺｎＳ：Ｍｎの発光電界強度より大きい。黒色膜８は
タンタルの黒色不完全酸化物により第１の発光体層４の
発光をガラス基板側に放射させる部分に形成されてい
る。The first luminous body layer 4 is formed of a green luminous body (ZnS: TbF) in which terbium fluoride is dispersed in zinc sulfide. The second luminous body layer 5 is formed of a yellow luminous body (ZnS: Mn) in which manganese is dispersed in zinc sulfide. The emission electric field strength of ZnS: TbF is larger than that of ZnS: Mn. The black film 8 is formed on a portion of the first light emitting layer 4 which emits light emitted from the black light incomplete oxide of tantalum to the glass substrate side.
【００１４】透明電極２と背面電極７との間に交番電圧
を印加し電圧を高くしていくと、まず、第２の発光体層
５が発光する。第２の発光体層５の発光を得るには第２
の発光体層５が発光し第１の発光体層４が発光しない電
圧を透明電極２と背面電極７との間に印加する。第１の
発光体層４の発光を得るには第１の発光体層４が発光す
る電圧を透明電極２と背面電極７との間に印加する。こ
のとき第２の発光体層５も発光するが黒色膜８に遮られ
ガラス基板１から放射されない。このような構成により
２色発光の薄膜ＥＬ素子が得られる。When an alternating voltage is applied between the transparent electrode 2 and the back electrode 7 to increase the voltage, first, the second light emitting layer 5 emits light. To obtain the light emission of the second luminous body layer 5, the second
A voltage is applied between the transparent electrode 2 and the back electrode 7 by the light emitting layer 5 which emits light and the first light emitting layer 4 does not emit light. In order to obtain the light emission of the first light emitting layer 4, a voltage for emitting light from the first light emitting layer 4 is applied between the transparent electrode 2 and the back electrode 7. At this time, the second light emitting layer 5 also emits light, but is blocked by the black film 8 and is not emitted from the glass substrate 1. With such a structure, a two-color light emitting thin film EL element can be obtained.
【００１５】図２はこの発明の第２の実施例を示す。こ
の実施例は請求項２の多色発光薄膜ＥＬ素子の例であ
る。この実施例では第１の発光体層４の上に黒色膜８を
形成する前に中間絶縁層９を積層し中間絶縁層９の上に
黒色膜８が形成されている。中間絶縁層９はＳｉＯ2 ，
Ｓｉ3 Ｎ4 ，Ａｌ3 Ｏ3 ，Ｔａ2 Ｏ5 等の絶縁物で形成
される。他の構成は第１の実施例と同様である。このよ
うな構成とすることにより黒色膜８をパターニングする
とき発光体層を損傷することを防止できる。FIG. 2 shows a second embodiment of the present invention. This embodiment is an example of the multicolor light emitting thin film EL element of claim 2. In this embodiment, the intermediate insulating layer 9 is laminated before the black film 8 is formed on the first light emitting layer 4, and the black film 8 is formed on the intermediate insulating layer 9. The intermediate insulating layer 9 is SiO 2 ,
It is made of an insulating material such as Si 3 N 4 , Al 3 O 3 , and Ta 2 O 5 . The other structure is similar to that of the first embodiment. With such a configuration, it is possible to prevent the light emitting layer from being damaged when the black film 8 is patterned.
【００１６】図３はこの発明の第３の実施例を示す。こ
の実施例は請求項３または請求項４の多色発光薄膜ＥＬ
素子の例である。この実施例では黒色膜８の上にＡｌの
金属膜１０が積層され、その上部の背面電極７に接続さ
れている。他の構成は第１の実施例と同様である。この
ような構成とすることにより黒色膜８の上の第２の発光
体層５の光を完全に遮断することができ、また、第１の
発光体層４を発光させるために必要な背面電極７の印加
電圧を低くすることが可能となる。FIG. 3 shows a third embodiment of the present invention. In this embodiment, the multicolor light emitting thin film EL according to claim 3 or 4 is used.
It is an example of an element. In this embodiment, an Al metal film 10 is laminated on the black film 8 and is connected to the back electrode 7 above the metal film 10. The other structure is similar to that of the first embodiment. With such a configuration, the light of the second light emitting layer 5 on the black film 8 can be completely blocked, and the back electrode necessary for causing the first light emitting layer 4 to emit light. It is possible to lower the applied voltage of 7.
【００１７】図４はこの発明の第４の実施例を示す。こ
の実施例は請求項３または請求項４の多色発光薄膜ＥＬ
素子の例である。この実施例では第１の発光体層４の上
に黒色膜８を形成する前に中間絶縁層９を積層し中間絶
縁層９の上に黒色膜８が形成されている。中間絶縁層９
はＳｉＯ2 ，Ｓｉ3 Ｎ4 ，Ａｌ3 Ｏ3 ，Ｔａ2 Ｏ5等の
絶縁物で形成される。他の構成は第３の実施例と同様で
ある。このような構成とすることにより黒色膜８をパタ
ーニングするとき発光体層を損傷することを防止でき
る。FIG. 4 shows a fourth embodiment of the present invention. In this embodiment, the multicolor light emitting thin film EL according to claim 3 or 4 is used.
It is an example of an element. In this embodiment, the intermediate insulating layer 9 is laminated before the black film 8 is formed on the first light emitting layer 4, and the black film 8 is formed on the intermediate insulating layer 9. Intermediate insulating layer 9
Is formed of an insulator such as SiO 2 , Si 3 N 4 , Al 3 O 3 or Ta 2 O 5 . The other structure is similar to that of the third embodiment. With such a configuration, it is possible to prevent the light emitting layer from being damaged when the black film 8 is patterned.
【００１８】図５はこの発明の第５の実施例を示す。こ
の実施例は請求項６の多色発光薄膜ＥＬ素子の例であ
る。この実施例では黒色膜８が形成される部分の中間絶
縁層９の厚みを減じている。他の構成は第２の実施例と
同様である。このような構成とすることにより、第１の
発光体層４を発光させるため駆動電圧と第２の発光体層
５を発光させるため駆動電圧を等しくすることができ、
薄膜ＥＬ素子駆動回路の回路構成が簡単となる。FIG. 5 shows a fifth embodiment of the present invention. This embodiment is an example of the multicolor light emitting thin film EL element of claim 6. In this embodiment, the thickness of the intermediate insulating layer 9 at the portion where the black film 8 is formed is reduced. The other structure is similar to that of the second embodiment. With such a configuration, the driving voltage for causing the first light emitting layer 4 to emit light and the driving voltage for causing the second light emitting layer 5 to emit light can be equalized,
The circuit configuration of the thin film EL element drive circuit becomes simple.
【００１９】図６はこの発明の第６の実施例を示す。こ
の実施例は請求項５の多色発光薄膜ＥＬ素子の例であ
る。この実施例では黒色膜８が形成されていない部分の
中間絶縁層９の厚みを減じている。他の構成は第４の実
施例と同様である。このような構成とすることにより、
第１の発光体層４を発光させるため駆動電圧と第２の発
光体層５を発光させるため駆動電圧を等しくすることが
でき、薄膜ＥＬ素子駆動回路の回路構成が簡単となる。FIG. 6 shows a sixth embodiment of the present invention. This embodiment is an example of the multicolor light emitting thin film EL element of claim 5. In this embodiment, the thickness of the intermediate insulating layer 9 in the portion where the black film 8 is not formed is reduced. The other structure is similar to that of the fourth embodiment. With this configuration,
The drive voltage for causing the first light emitting layer 4 to emit light and the drive voltage for causing the second light emitting layer 5 to emit light can be equalized, and the circuit configuration of the thin film EL element drive circuit is simplified.
【００２０】図７はこの発明の第７の実施例を示す。こ
の実施例は請求項７の多色発光薄膜ＥＬ素子の例であ
る。この実施例では背面電極７ａを黒色膜と金属膜との
積層体で形成し、背面電極７ａの上に絶縁層１１を形成
し、その上に黒色膜１２を形成している。絶縁層１１は
誘電率が低くかつ耐圧の高いＳｉＯ2 等の絶縁体で構成
されている。他の構成は第２の実施例と同様である。第
１および第２の実施例のＥＬ素子では黒色膜のある部分
は黒く、背面電極の部分は金属光沢がある。この実施例
ではＥＬ素子全体が黒くなりコントラスト比が向上す
る。なお、第１および第２の発光体層の間に介在させた
黒色膜８と背面電極７ａを構成する黒色膜と絶縁層１１
の上の黒色膜１２とは同一の材料で構成するとＥＬ素子
の画面が見やすくなる。FIG. 7 shows a seventh embodiment of the present invention. This embodiment is an example of the multicolor light emitting thin film EL element of claim 7. In this embodiment, the back electrode 7a is formed of a laminated body of a black film and a metal film, the insulating layer 11 is formed on the back electrode 7a, and the black film 12 is formed thereon. The insulating layer 11 is made of an insulator such as SiO 2 having a low dielectric constant and a high breakdown voltage. The other structure is similar to that of the second embodiment. In the EL elements of the first and second embodiments, the portion with the black film is black and the portion of the back electrode has metallic luster. In this embodiment, the entire EL element is blackened and the contrast ratio is improved. The black film 8 interposed between the first and second light emitting layers, the black film forming the back electrode 7a, and the insulating layer 11 are formed.
If the same material as the black film 12 above is used, the screen of the EL element can be easily viewed.
【００２１】図８はこの発明の第８の実施例を示す。こ
の実施例では第７の実施例のＥＬ素子において黒色膜８
が形成される部分の中間絶縁層９の厚みを減じている。
他の構成は第７の実施例と同様である。このような構成
とすることにより、第１の発光体層４を発光させるため
駆動電圧と第２の発光体層５を発光させるため駆動電圧
を等しくすることができ、薄膜ＥＬ素子駆動回路の回路
構成が簡単となる。FIG. 8 shows an eighth embodiment of the present invention. In this embodiment, the black film 8 is used in the EL device of the seventh embodiment.
The thickness of the intermediate insulating layer 9 in the portion where the is formed is reduced.
Other configurations are similar to those of the seventh embodiment. With such a configuration, the drive voltage for causing the first light-emitting body layer 4 to emit light and the drive voltage for causing the second light-emitting body layer 5 to emit light can be equalized, and the circuit of the thin film EL element drive circuit can be made. The configuration is simple.
【００２２】図９はこの発明の第９の実施例を示す。図
に示すように、ガラス基板１の上に酸化インジウム・錫
膜等の透明電極２が積層されている。その上に第１絶縁
層３、第１の発光体層４、第２の発光体層５、第３の発
光体層１３、第２絶縁層６および背面電極７が順次積層
されている。第１の発光体層４、第２の発光体層５、第
３の発光体層１３の間には発光パターンに応じて形成さ
れた黒色膜８が形成されている。第１の発光体層４は硫
化亜鉛中にフッ化サマリウムが分散された赤色発光体
（ＺｎＳ：ＳｍＦ）により形成されている。第２の発光
体層５は硫化亜鉛中にフッ化テリビウムが分散された緑
色発光体（ＺｎＳ：ＴｂＦ）により形成されている。第
３の発光体層１３は硫化亜鉛中にマンガンが分散された
黄色発光体（ＺｎＳ：Ｍｎ）により形成されている。第
３の発光体層１３の方が第２の発光体層５より発光電界
強度が小さく、また、第２の発光体層５の方が第１の発
光体層４より発光電界強度が小さい。透明電極２と背面
電極７との間に交番電圧を印加し電圧を高くしていく
と、まず、第３の発光体層１３が発光する。第３の発光
体層１３の発光を得るには第３の発光体層１３が発光
し、第１および第２の発光体層が発光しない電圧を透明
電極２と背面電極７との間に印加する。第２の発光体層
５の発光を得るには第２の発光体層５が発光する電圧を
透明電極２と背面電極７との間に印加する。このとき第
３の発光体層１３も発光するが黒色膜８に遮られガラス
基板１から放射されない。第１の発光体層４の発光を得
るには第１の発光体層４が発光する電圧を透明電極２と
背面電極７との間に印加する。このとき第２および第３
の発光体層１３も発光するが黒色膜８に遮られガラス基
板１から放射されない。このような構成により３色発光
の薄膜ＥＬ素子が得られる。FIG. 9 shows a ninth embodiment of the present invention. As shown in the figure, a transparent electrode 2 such as an indium oxide / tin film is laminated on a glass substrate 1. A first insulating layer 3, a first light emitting layer 4, a second light emitting layer 5, a third light emitting layer 13, a second insulating layer 6 and a back electrode 7 are sequentially stacked on top of this. A black film 8 is formed between the first light emitting layer 4, the second light emitting layer 5, and the third light emitting layer 13 according to the light emitting pattern. The first luminous body layer 4 is formed of a red luminous body (ZnS: SmF) in which samarium fluoride is dispersed in zinc sulfide. The second luminous body layer 5 is formed of a green luminous body (ZnS: TbF) in which terbium fluoride is dispersed in zinc sulfide. The third luminous body layer 13 is formed of a yellow luminous body (ZnS: Mn) in which manganese is dispersed in zinc sulfide. The third luminous body layer 13 has a smaller luminous field intensity than the second luminous body layer 5, and the second luminous body layer 5 has a smaller luminous field intensity than the first luminous body layer 4. When an alternating voltage is applied between the transparent electrode 2 and the back electrode 7 to increase the voltage, first, the third light emitting layer 13 emits light. In order to obtain the light emission of the third luminous body layer 13, a voltage is applied between the transparent electrode 2 and the back electrode 7 so that the third luminous body layer 13 emits light and the first and second luminous body layers do not emit light. To do. In order to obtain the light emission of the second light emitter layer 5, the voltage emitted by the second light emitter layer 5 is applied between the transparent electrode 2 and the back electrode 7. At this time, the third light emitting layer 13 also emits light, but it is blocked by the black film 8 and is not emitted from the glass substrate 1. In order to obtain the light emission of the first light emitting layer 4, a voltage for emitting light from the first light emitting layer 4 is applied between the transparent electrode 2 and the back electrode 7. At this time, the second and third
The light emitting layer 13 also emits light, but is blocked by the black film 8 and is not emitted from the glass substrate 1. With such a structure, a three-color light emitting thin film EL element can be obtained.
【００２３】実施例は以上のように構成されているが発
明はこれに限られず、例えば、ＣａＳ：Ｅｕ，ＳｒＳ：
Ｃｅ，ＺｎＳ：Ｔｍ等の発光体を用いてこの発明を実施
することも可能である。The embodiment is configured as described above, but the invention is not limited to this. For example, CaS: Eu, SrS:
It is also possible to carry out the present invention by using a light emitting body such as Ce, ZnS: Tm.
【００２４】[0024]
【発明の効果】この発明の多色発光薄膜ＥＬ素子によれ
ば、発光体層はスパッタリングや蒸着により形成するの
みでその後の加工を施すことなく多色発光の薄膜ＥＬ素
子を製造することが可能となる。従って、製造コストが
削減される。According to the multicolor light emitting thin film EL element of the present invention, it is possible to manufacture a multicolor light emitting thin film EL element only by forming the light emitting layer by sputtering or vapor deposition without further processing. Becomes Therefore, the manufacturing cost is reduced.
【００２５】また、発光体として硫化物を使用する場合
に、加水分解を生じ易いフォトリソグラフィ工程や洗浄
工程が発光体層に行われないので歩留まりよく多色発光
薄膜ＥＬ素子を製造でき、また、使用中に膜剥離による
発光停止も生じにくい。Further, when a sulfide is used as the light emitting body, a photolithography process or a washing process that easily causes hydrolysis is not performed on the light emitting layer, so that a multicolor light emitting thin film EL element can be manufactured with good yield, and Light emission is less likely to occur due to film peeling during use.
【００２６】また、第５および第６の実施例に示すよう
に、中間絶縁層の厚みを変化させることにより第１の発
光体層を発光させるため駆動電圧と第２の発光体層を発
光させるため駆動電圧を等しくすることができ、薄膜Ｅ
Ｌ素子駆動回路の回路構成が簡単となる。Further, as shown in the fifth and sixth embodiments, by changing the thickness of the intermediate insulating layer, the driving voltage and the second light emitting layer are made to emit light so that the first light emitting layer emits light. Therefore, the driving voltage can be equalized, and the thin film E
The circuit configuration of the L element drive circuit becomes simple.
【００２７】さらに、第７の実施例に示すように、背面
電極に黒色膜を用い、さらにその上部に黒色膜を設ける
ことにより多色発光薄膜ＥＬ素子のコントラストを向上
させることができる。Further, as shown in the seventh embodiment, a black film is used for the back electrode, and a black film is further provided on the back electrode to improve the contrast of the multicolor light emitting thin film EL element.
【図１】この発明の第１の実施例である多色発光薄膜Ｅ
Ｌ素子の構造を示す断面図である。FIG. 1 is a multicolor light emitting thin film E according to a first embodiment of the present invention.
It is sectional drawing which shows the structure of L element.
【図２】この発明の第２の実施例である多色発光薄膜Ｅ
Ｌ素子の構造を示す断面図である。FIG. 2 is a multicolor light emitting thin film E which is a second embodiment of the present invention.
It is sectional drawing which shows the structure of L element.
【図３】この発明の第３の実施例である多色発光薄膜Ｅ
Ｌ素子の構造を示す断面図である。FIG. 3 is a third embodiment of a multicolor light emitting thin film E of the present invention.
It is sectional drawing which shows the structure of L element.
【図４】この発明の第４の実施例である多色発光薄膜Ｅ
Ｌ素子の構造を示す断面図である。FIG. 4 is a multicolor light emitting thin film E according to a fourth embodiment of the present invention.
It is sectional drawing which shows the structure of L element.
【図５】この発明の第５の実施例である多色発光薄膜Ｅ
Ｌ素子の構造を示す断面図である。FIG. 5 is a fifth embodiment of a multicolor light emitting thin film E of the present invention.
It is sectional drawing which shows the structure of L element.
【図６】この発明の第６の実施例である多色発光薄膜Ｅ
Ｌ素子の構造を示す断面図である。FIG. 6 is a multicolor light emitting thin film E according to a sixth embodiment of the present invention.
It is sectional drawing which shows the structure of L element.
【図７】この発明の第７の実施例である多色発光薄膜Ｅ
Ｌ素子の構造を示す断面図である。FIG. 7 is a multicolor light emitting thin film E which is a seventh embodiment of the present invention.
It is sectional drawing which shows the structure of L element.
【図８】この発明の第８の実施例である多色発光薄膜Ｅ
Ｌ素子の構造を示す断面図である。FIG. 8 is a multicolor light emitting thin film E according to an eighth embodiment of the present invention.
It is sectional drawing which shows the structure of L element.
【図９】この発明の第９の実施例である多色発光薄膜Ｅ
Ｌ素子の構造を示す断面図である。FIG. 9 is a multicolor light emitting thin film E according to a ninth embodiment of the present invention.
It is sectional drawing which shows the structure of L element.
【図１０】従来の多色発光薄膜ＥＬ素子の構造の例を示
す断面図である。FIG. 10 is a cross-sectional view showing an example of the structure of a conventional multicolor light emitting thin film EL element.
１ ガラス基板 ２ 透明電極 ３ 第１絶縁層 ４ 第１の発光体層 ５ 第２の発光体層 ６ 第２絶縁層 ７ 背面電極 ８ 黒色膜 ９ 中間絶縁層 １２ 黒色膜 １３ 第３の発光体層 1 glass substrate 2 transparent electrode 3 First insulation layer 4 First light emitter layer 5 Second light emitter layer 6 Second insulating layer 7 Back electrode 8 black film 9 Intermediate insulation layer 12 Black film 13 Third luminous body layer
Claims (9)
面電極との間の透明電極側にＥＬ発光を呈する第１の発
光体層を、背面電極側に第１の発光体層と異なる波長の
ＥＬ発光を呈し第１の発光体層の発光電界強度より低い
発光電界強度の第２の発光体層を介在させ第１および第
２の発光体層の間に発光パターンに応じて形成された黒
色膜を介在させた多色発光薄膜ＥＬ素子。1. A first luminous body layer exhibiting EL emission is provided on the transparent electrode side between the transparent electrode and the back electrode formed in the light emission pattern, and a back surface electrode side of a different wavelength from that of the first luminous body layer is provided. A black color that is formed between the first and second light-emitting layers according to the light-emitting pattern by interposing a second light-emitting layer that emits EL light and has a light-emitting field strength lower than that of the first light-emitting layer. A multicolor light emitting thin film EL device with a film interposed.
ｉＯ2 ，Ｓｉ3 Ｎ4 ，Ａｌ3 Ｏ3 ，Ｔａ2 Ｏ5 等の絶縁
層を形成した請求項１の多色発光薄膜ＥＬ素子。2. S between the first phosphor layer and the black film
The multicolor light emitting thin film EL device according to claim 1, wherein an insulating layer of iO 2 , Si 3 N 4 , Al 3 O 3 , Ta 2 O 5 or the like is formed.
背面電極と接続されている請求項１または２の多色発光
薄膜ＥＬ素子。3. The multicolor light emitting thin film EL element according to claim 1, wherein the black film is formed of a conductor and is connected to a back electrode immediately above the conductor.
されている請求項１から３に記載された多色発光薄膜Ｅ
Ｌ素子。4. The multicolor light emitting thin film E according to claim 1, wherein a metal film is laminated on the back electrode side of the black film.
L element.
部分の厚みを減じて、黒色膜が形成された部分の第１の
発光体層を発光させるための駆動電圧と第２の発光体層
を発光させるための駆動電圧を等しくした請求項３の多
色発光薄膜ＥＬ素子。5. A drive voltage and a second light emitter for reducing the thickness of a portion of the insulating layer where the black film is not formed to cause the first light emitter layer of the portion where the black film is formed to emit light. The multicolor light emitting thin film EL element according to claim 3, wherein the driving voltage for causing the layers to emit light is made equal.
子の中、発光体層と黒色膜との間に絶縁層を設けたもの
において、絶縁層の黒色膜が形成される部分の厚みを減
じて、黒色膜が形成された部分の第１の発光体層を発光
させるための駆動電圧と第２の発光体層を発光させるた
めの駆動電圧を等しくした多色発光薄膜ＥＬ素子。6. The multicolor light emitting thin film EL element according to claim 3 or 4, wherein an insulating layer is provided between the light emitting layer and the black film, the thickness of the portion of the insulating layer where the black film is formed. And a driving voltage for causing the first light emitting layer in the portion where the black film is formed to emit light and a driving voltage for causing the second light emitting layer to emit light are equal to each other.
体で形成し、背面電極の上に絶縁層を形成し、その上に
黒色膜を形成した請求項１から６に記載された多色発光
薄膜ＥＬ素子。7. The method according to claim 1, wherein the back electrode is formed of a laminated body of a black film and a metal film, an insulating layer is formed on the back electrode, and the black film is formed thereon. Multicolor light emitting thin film EL device.
物により形成した請求項１から７に記載された多色発光
薄膜ＥＬ素子。8. The multicolor light emitting thin film EL element according to claim 1, wherein the black film is formed of a black incomplete oxide of tantalum.
面電極との間の透明電極側にＥＬ発光を呈する第１の発
光体層を、背面電極側に第１の発光体層と異なる波長の
ＥＬ発光を呈し第１の発光体層の発光電界強度より低い
発光電界強度の第３の発光体層を介在させ、第１と第３
の発光体層の間に第１および第２の発光体層と異なる波
長のＥＬ発光を呈し第１の発光体層の発光電界強度より
低く第３の発光体層の発光電界強度より高い発光電界強
度の第２の発光体層を介在させ、第１および第２の発光
体層の間および第２および第３の発光体層の間に発光パ
ターンに応じて形成された黒色膜を介在させた多色発光
薄膜ＥＬ素子。9. A first light-emitting layer exhibiting EL light emission is provided on the transparent electrode side between the transparent electrode and the back electrode formed in the light-emitting pattern, and has a wavelength different from that of the first light-emitting layer on the back electrode side. A third light-emitting layer that emits EL light and has an emission field strength lower than that of the first light-emitting body layer is interposed between the first and third light-emitting layers.
EL emission of a wavelength different from that of the first and second luminescent layers between the first and second luminescent layers and lower than the luminescent field intensity of the first luminescent layer and higher than the luminescent field intensity of the third luminescent layer. The strong second luminous body layer was interposed, and the black film formed according to the light emission pattern was interposed between the first and second luminous body layers and between the second and third luminous body layers. Multicolor light emitting thin film EL device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3047245A JPH0513169A (en) | 1991-01-24 | 1991-01-24 | Multi-color luminescence thin film el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3047245A JPH0513169A (en) | 1991-01-24 | 1991-01-24 | Multi-color luminescence thin film el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0513169A true JPH0513169A (en) | 1993-01-22 |
Family
ID=12769854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3047245A Pending JPH0513169A (en) | 1991-01-24 | 1991-01-24 | Multi-color luminescence thin film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0513169A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015046412A (en) * | 2000-08-28 | 2015-03-12 | 株式会社半導体エネルギー研究所 | Light emitting device |
-
1991
- 1991-01-24 JP JP3047245A patent/JPH0513169A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015046412A (en) * | 2000-08-28 | 2015-03-12 | 株式会社半導体エネルギー研究所 | Light emitting device |
| JP2017022406A (en) * | 2000-08-28 | 2017-01-26 | 株式会社半導体エネルギー研究所 | Light emitting device |
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