JPH0512863B2 - - Google Patents

Info

Publication number
JPH0512863B2
JPH0512863B2 JP56177201A JP17720181A JPH0512863B2 JP H0512863 B2 JPH0512863 B2 JP H0512863B2 JP 56177201 A JP56177201 A JP 56177201A JP 17720181 A JP17720181 A JP 17720181A JP H0512863 B2 JPH0512863 B2 JP H0512863B2
Authority
JP
Japan
Prior art keywords
conductivity type
semiconductor layer
layer
semiconductor
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56177201A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5879752A (ja
Inventor
Mitsuzo Sakamoto
Tomoyuki Watabe
Takahiro Okabe
Minoru Nagata
Tooru Nakamura
Akira Muramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56177201A priority Critical patent/JPS5879752A/ja
Publication of JPS5879752A publication Critical patent/JPS5879752A/ja
Publication of JPH0512863B2 publication Critical patent/JPH0512863B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56177201A 1981-11-06 1981-11-06 半導体装置の製造方法 Granted JPS5879752A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56177201A JPS5879752A (ja) 1981-11-06 1981-11-06 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56177201A JPS5879752A (ja) 1981-11-06 1981-11-06 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5879752A JPS5879752A (ja) 1983-05-13
JPH0512863B2 true JPH0512863B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-02-19

Family

ID=16026938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56177201A Granted JPS5879752A (ja) 1981-11-06 1981-11-06 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5879752A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60158657A (ja) * 1984-01-29 1985-08-20 Rohm Co Ltd 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS516488A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-07-05 1976-01-20 Hitachi Ltd
JPS5456357A (en) * 1977-10-14 1979-05-07 Hitachi Ltd Production of semiconductor device
JPS5655060A (en) * 1979-10-11 1981-05-15 Fujitsu Ltd Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS5879752A (ja) 1983-05-13

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