JPH05114678A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH05114678A JPH05114678A JP2407686A JP40768690A JPH05114678A JP H05114678 A JPH05114678 A JP H05114678A JP 2407686 A JP2407686 A JP 2407686A JP 40768690 A JP40768690 A JP 40768690A JP H05114678 A JPH05114678 A JP H05114678A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- soldering surface
- semiconductor device
- soldering
- outer peripheral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はヒートシンクの半田付面
に半導体ペレットを取り付けた半導体装置に関し、特に
ヒートシンクに改良を施した圧入型ダイオードに関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a semiconductor pellet is attached to a soldering surface of a heat sink, and more particularly to a press-fit type diode having an improved heat sink.
【０００２】[0002]
【従来の技術】従来、ヒートシンクとしては、例えば図
３（Ａ），（Ｂ）、図４（Ａ），（Ｂ）に示す構造のも
のが知られている。ここで、図３（Ｂ）は同図（Ａ）の
Ｘ−Ｘ線に沿う断面図、図４（Ｂ）は同図（Ａ）のＸ−
Ｘ線に沿う断面図である。2. Description of the Related Art Conventionally, as a heat sink, one having a structure shown in FIGS. 3A, 3B, 4A, and 4B is known. Here, FIG. 3B is a cross-sectional view taken along line XX of FIG. 3A, and FIG. 4B is X- of FIG.
It is sectional drawing which follows an X-ray.
【０００３】図３及び図４において、１は図７に示す如
く外周側面にローレット加工が施されたローレット部で
あり、２は半導体ペレットが取付けられる半田付面であ
る。ここで、図３は半田付面２がローレット加工面１の
上端より低い場合であり、図４は逆に半田付面２がロー
レット加工面１の上端より高い場合である。In FIGS. 3 and 4, reference numeral 1 is a knurled portion whose outer peripheral side surface is knurled as shown in FIG. 7, and 2 is a soldering surface to which a semiconductor pellet is attached. Here, FIG. 3 shows the case where the soldering surface 2 is lower than the upper end of the knurled surface 1, and FIG. 4 shows the case where the soldering surface 2 is higher than the upper end of the knurled surface 1 conversely.
【０００４】図５は、図３のヒートシンク３に半導体ペ
レット４を半田層5aを介して取付けた半導体装置の例を
示す。図５において、６はヒートシンク３の外周部に位
置するアルミ製の放熱フィンである。また、７は半導体
ペレット４に半田層5bを介して接続する銅製リード、８
はシリコン又はエポキシ樹脂からなる保護層である。一
方、図６は、図４のヒートシンク９を半導体ペレット４
を半田層5aを介して取付けた半導体装置の例を示す。FIG. 5 shows an example of a semiconductor device in which the semiconductor pellet 4 is attached to the heat sink 3 of FIG. 3 via the solder layer 5a. In FIG. 5, reference numeral 6 denotes an aluminum radiation fin located on the outer peripheral portion of the heat sink 3. Further, 7 is a copper lead connected to the semiconductor pellet 4 via the solder layer 5b, 8
Is a protective layer made of silicon or epoxy resin. On the other hand, FIG. 6 shows the heat sink 9 of FIG.
An example of a semiconductor device in which is attached via a solder layer 5a is shown.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、従来技
術によれば、以下に述べる問題点を有する。However, the conventional technique has the following problems.
【０００６】(1) 図５の半導体装置の場合； 半導体ペレット４が放熱フィン６の打ち込み部に打ち込
まれる際、半導体ペレット４とヒートシンク３を接合し
ている半田層5aに絶えず歪が加わった状態となり、熱疲
労しやすい。このことは、熱疲労テスト（ＴＦＴ）によ
り明らかであった。(1) In the case of the semiconductor device of FIG. 5: When the semiconductor pellet 4 is driven into the driving portion of the heat radiation fin 6, the solder layer 5a joining the semiconductor pellet 4 and the heat sink 3 is constantly strained. It is easy to get heat fatigue. This was clear by the thermal fatigue test (TFT).
【０００７】(2) 図６の半導体装置の場合； 図６は、図５の装置の問題点である熱疲労を解消するた
めに半導体ペレットの半田付面を凸状にし、放熱フィン
６の打ち込みで発生する歪を逃がした構造のものである
が、下記のような問題点を有する。(2) In the case of the semiconductor device of FIG. 6; FIG. 6 shows that the soldering surface of the semiconductor pellet is made convex and the heat radiation fin 6 is driven in in order to eliminate the thermal fatigue which is a problem of the device of FIG. However, it has the following problems.
【０００８】（イ）保護層９が流れ出ないように外周部
に壁を設ける必要があるが、その壁は高いため、ヒート
シンク９と一体で作ることができない。従って、図６に
示すように樹脂製リング10を別に準備する必要があり、
コスト高を招く。(A) It is necessary to provide a wall on the outer peripheral portion so that the protective layer 9 does not flow out, but since the wall is high, it cannot be formed integrally with the heat sink 9. Therefore, it is necessary to separately prepare the resin ring 10 as shown in FIG.
Incurs high costs.
【０００９】（ロ）上述したように樹脂製リング10を設
けるため、半導体ペレットの大きさが制限される。(B) Since the resin ring 10 is provided as described above, the size of the semiconductor pellet is limited.
【００１０】（ハ）ヒートシンク９の材料使用量が多く
なり、コスト高となる。(C) The amount of material used for the heat sink 9 increases, resulting in higher cost.
【００１１】本発明は上記事情に鑑みてなされたもの
で、ヒートシンクの半田付面をローレット加工面の上端
部より高くし、ヒートシンクの外周部の壁を半田付面よ
り高くし、かつ前記半田付面を外周に溝を有し凸状にす
ることにより、半導体ペレットをヒートシンクに打ち込
む際に発生する歪を逃し、半導体ペレットの性能低下を
抑制しうる半導体装置を提供することを目的とする。The present invention has been made in view of the above circumstances, in which the soldering surface of the heat sink is higher than the upper end of the knurled surface, the wall of the outer peripheral portion of the heat sink is higher than the soldering surface, and the soldering is performed. An object of the present invention is to provide a semiconductor device in which the surface has a groove on the outer periphery and is convex so that the strain generated when the semiconductor pellet is driven into the heat sink can be released and the performance deterioration of the semiconductor pellet can be suppressed.
【００１２】[0012]
【課題を解決するための手段】本発明は、外周側面にロ
ーレット加工を施した銅製円板状ヒートシンクを放熱フ
ィンに設け、更に前記ヒートシンクの半田付面に半導体
ペレットを取付けた半導体装置において、前記半田付面
がローレット加工面の上端部より高いとともに、ヒート
シンクの外周部の壁が半田付面より高く、かつ前記半田
付面は外周に溝を有し凸状になっていることを特徴とす
る半導体装置である。The present invention provides a semiconductor device in which a copper disk-shaped heat sink having a knurled outer peripheral side surface is provided on a radiation fin, and a semiconductor pellet is attached to a soldering surface of the heat sink. The soldering surface is higher than the upper end of the knurled surface, the outer peripheral wall of the heat sink is higher than the soldering surface, and the soldering surface has a groove on the outer periphery and is convex. It is a semiconductor device.
【００１３】[0013]
【作用】本発明においては、ヒートシンクの半田付面部
の突出度合を図４（従来例）の如く高くせず最小限に押
さえ、かつその不足分をその周辺に設けた溝によりカバ
ーすることにより、ヒートシンクを放熱フィンへ打ち込
む際に発生する歪を逃し、半導体ペレットへの悪影響を
防止でき、信頼性の高い半導体装置を得ることができ
る。In the present invention, the degree of protrusion of the soldering surface portion of the heat sink is minimized without increasing it as shown in FIG. 4 (conventional example), and the shortage is covered by the groove provided around it. The strain generated when the heat sink is driven into the heat radiation fin can be released, the adverse effect on the semiconductor pellet can be prevented, and a highly reliable semiconductor device can be obtained.
【００１４】[0014]
【実施例】以下、本発明の一実施例を図１を参照して説
明する。但し、従来と同部材は同符号を付して説明を省
略する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. However, the same members as those of the related art are denoted by the same reference numerals and the description thereof will be omitted.
【００１５】本実施例に係る半導体装置は、ヒートシン
ク21に改良を施した点を特徴とする。即ち、ヒートシン
ク21の半田付面22がローレット加工面23の上端部Ｐより
高く、またヒートシンク21の外周部の壁が半田付面22よ
り高く、更に前記半田付面22は外周に溝24を有し凸状に
なった構成になっている。具体的には、例えばヒートシ
ンク21の外径（Ｄ）φ12.8mm、ローレット加工面のロー
レット数78Ｐ、半田付面部の径（ｄ）φ7.0mm 、半田付
面22からの溝部の深さ（Ｆ）2.1mm 、溝部の底面からの
壁の高さ（Ｈ）が3.6mm である。なお、上記ローレット
加工面も図７に示すような形状となっている。The semiconductor device according to this embodiment is characterized in that the heat sink 21 is improved. That is, the soldering surface 22 of the heat sink 21 is higher than the upper end portion P of the knurled surface 23, the outer peripheral wall of the heat sink 21 is higher than the soldering surface 22, and the soldering surface 22 has a groove 24 on the outer periphery. It has a convex configuration. Specifically, for example, the outer diameter (D) of the heat sink 21 is φ12.8 mm, the number of knurls on the knurled surface is 78 P, the diameter of the soldering surface portion (d) is φ7.0 mm, and the depth of the groove portion from the soldering surface 22 (F ) 2.1 mm, and the height (H) of the wall from the bottom of the groove is 3.6 mm. The knurled surface also has a shape as shown in FIG.
【００１６】しかして、上記実施例に係る半導体装置に
よれば、ヒートシンク21について、半田付面部の突出度
合を図４（従来例）の如く高くせず最小限に押さえ、そ
の不足分をその周辺に設けた溝24によりカバーした構成
となっているため、ヒートシンク21を放熱フィン６へ打
ち込む際に発生する歪を逃し、半導体ペレットへの悪影
響を防止できる。According to the semiconductor device of the above embodiment, however, the protrusion degree of the soldering surface of the heat sink 21 is minimized without increasing it as shown in FIG. Since the structure is covered by the groove 24 provided in the heat sink 21, the strain generated when the heat sink 21 is driven into the heat radiation fin 6 can be released, and the adverse effect on the semiconductor pellet can be prevented.
【００１７】事実、図５の半導体装置（従来）の場合、
ヒートシンクの半田付面部の歪を測定したところ、圧縮
歪は1500〜2000μｍとかなり大きかった。これに対し、
第１図の半導体装置（本発明）によれば、歪は10〜50μ
ｍと大幅に小さくなった。また、半導体の特性の熱疲労
テスト（ＴＦＴ）では、2000〜6000以上と大幅に向上し
た。従って、本発明が従来技術に比べて優れていること
が明らかである。In fact, in the case of the semiconductor device of FIG. 5 (conventional),
When the strain on the soldering surface of the heat sink was measured, the compressive strain was considerably large, 1500 to 2000 μm. In contrast,
According to the semiconductor device of the present invention shown in FIG. 1, the strain is 10 to 50 μm.
It was significantly reduced to m. Moreover, in the thermal fatigue test (TFT) of the characteristics of the semiconductor, it was significantly improved to 2000-6000 or more. Therefore, it is clear that the present invention is superior to the prior art.
【００１８】[0018]
【発明の効果】以上詳述した如く本発明によれば、ヒー
トシンクの半田付面をローレット加工の上端部より高く
し、ヒートシンクの外周部の壁を半田付面より高くし、
かつ前記半田付面を外周に溝を有し凸状にすることによ
り、ヒートシンクの打ち込みで発生する歪を逃し、半導
体ペレットの性能を大幅に向上しうる半導体装置を提供
できる。As described in detail above, according to the present invention, the soldering surface of the heat sink is made higher than the upper end portion of the knurling, and the wall of the outer peripheral portion of the heat sink is made higher than the soldering surface.
Moreover, by forming the soldering surface to have a convex shape with a groove on the outer periphery, it is possible to provide a semiconductor device in which the strain generated by driving the heat sink can be released and the performance of the semiconductor pellet can be significantly improved.
【図１】本発明の一実施例に係る半導体装置の断面図。FIG. 1 is a sectional view of a semiconductor device according to an embodiment of the present invention.
【図２】図１の半導体装置に用いられるヒートシンクの
説明図。FIG. 2 is an explanatory diagram of a heat sink used in the semiconductor device of FIG.
【図３】従来のヒートシンクの説明図。FIG. 3 is an explanatory diagram of a conventional heat sink.
【図４】従来のヒートシンクの説明図。FIG. 4 is an explanatory diagram of a conventional heat sink.
【図５】図３のヒートシンクを用いた半導体装置の断面
図。5 is a sectional view of a semiconductor device using the heat sink of FIG.
【図６】図４のヒートシンクを用いた半導体装置の断面
図。6 is a sectional view of a semiconductor device using the heat sink of FIG.
【図７】図３のヒートシンクのローレット部の説明図。FIG. 7 is an explanatory diagram of a knurled portion of the heat sink of FIG.
４…半導体ペレット、5a，5b…半田層、６…放熱フィ
ン、７…銅製リード、８…保護層、21…ヒートシンク、
22…半田付面、23…ローレット加工面。4 ... Semiconductor pellet, 5a, 5b ... Solder layer, 6 ... Radiating fin, 7 ... Copper lead, 8 ... Protective layer, 21 ... Heat sink,
22… Soldering surface, 23… Knurled surface.
Claims (1)
円板状ヒートシンクを放熱フィンに設け、更に前記ヒー
トシンクの半田付面に半導体ペレットを取付けた半導体
装置において、前記半田付面がローレット加工面の上端
部より高いとともに、ヒートシンクの外周部の壁が半田
付面より高く、かつ前記半田付面は外周に溝を有し凸状
になっていることを特徴とする半導体装置。1. A semiconductor device in which a copper disk-shaped heat sink having a knurled outer peripheral surface is provided on a radiation fin, and a semiconductor pellet is attached to a soldering surface of the heat sink, wherein the soldering surface is a knurled surface. A semiconductor device characterized in that the wall of the outer peripheral portion of the heat sink is higher than the upper end portion and the wall of the outer peripheral portion is higher than the soldering surface, and the soldering surface has a groove on the outer periphery and is convex.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2407686A JP2843684B2 (en) | 1990-12-27 | 1990-12-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2407686A JP2843684B2 (en) | 1990-12-27 | 1990-12-27 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05114678A true JPH05114678A (en) | 1993-05-07 |
| JP2843684B2 JP2843684B2 (en) | 1999-01-06 |
Family
ID=18517242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2407686A Expired - Lifetime JP2843684B2 (en) | 1990-12-27 | 1990-12-27 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2843684B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6331730B1 (en) | 1998-04-23 | 2001-12-18 | Hitachi, Ltd. | Push-in type semiconductor device including heat spreader |
| US7235876B2 (en) * | 2005-09-12 | 2007-06-26 | Denso Corporation | Semiconductor device having metallic plate with groove |
| DE10310067B4 (en) * | 2002-03-08 | 2010-12-16 | Hitachi, Ltd. | Semiconductor device with a hollow cylindrical housing electrode |
-
1990
- 1990-12-27 JP JP2407686A patent/JP2843684B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6331730B1 (en) | 1998-04-23 | 2001-12-18 | Hitachi, Ltd. | Push-in type semiconductor device including heat spreader |
| DE10310067B4 (en) * | 2002-03-08 | 2010-12-16 | Hitachi, Ltd. | Semiconductor device with a hollow cylindrical housing electrode |
| US7235876B2 (en) * | 2005-09-12 | 2007-06-26 | Denso Corporation | Semiconductor device having metallic plate with groove |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2843684B2 (en) | 1999-01-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8309969B2 (en) | Light emitting device and method of making same | |
| US5488254A (en) | Plastic-molded-type semiconductor device | |
| JPH0964251A (en) | Semiconductor device | |
| JP2005175048A (en) | Semiconductor light emitting device | |
| JP3054576B2 (en) | Semiconductor device | |
| JP2006100752A (en) | Circuit arrangement and its manufacturing method | |
| US20130062643A1 (en) | Light emitting device | |
| JPH05114678A (en) | Semiconductor device | |
| JP2857648B2 (en) | Electronic component manufacturing method | |
| JP2010263004A (en) | Solid-state image pickup device | |
| JP2002190560A (en) | Semiconductor device | |
| JPH06177178A (en) | Structure of semiconductor chip | |
| JPS6410686A (en) | Semiconductor laser module with electronic cooling element | |
| JP3341731B2 (en) | Semiconductor element support plate, semiconductor device, and semiconductor device package | |
| JPH0377674B2 (en) | ||
| US6008529A (en) | Laser diode package | |
| JPH10190069A (en) | Semiconductor light emitting device | |
| JPS6190459A (en) | Package of solid-state image pickup element | |
| JP2836219B2 (en) | Resin-sealed semiconductor package | |
| JPS63200551A (en) | Lead frame | |
| JPH06326230A (en) | Resin sealed semiconductor device | |
| JPH0451549A (en) | High heat dissipation type semiconductor device | |
| JPH04246876A (en) | Semiconductor laser element | |
| JPS56137662A (en) | Semiconductor device | |
| JPH06151902A (en) | Solid state image pickup device |