JPH05114662A - Electronic part airtight sealing case and sealing method thereof - Google Patents

Electronic part airtight sealing case and sealing method thereof

Info

Publication number
JPH05114662A
JPH05114662A JP3207754A JP20775491A JPH05114662A JP H05114662 A JPH05114662 A JP H05114662A JP 3207754 A JP3207754 A JP 3207754A JP 20775491 A JP20775491 A JP 20775491A JP H05114662 A JPH05114662 A JP H05114662A
Authority
JP
Japan
Prior art keywords
hermetically sealed
sealed container
cap
brazing material
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP3207754A
Other languages
Japanese (ja)
Inventor
Yoichiro Nabeshima
陽一郎 鍋島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3207754A priority Critical patent/JPH05114662A/en
Publication of JPH05114662A publication Critical patent/JPH05114662A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To provide an airtight sealing case having no residual stress harmful to quality by simultaneously performing thermal bonding of the rear face of an electronic part, such as semiconductor chip, and the bottom face of the cap and airtight bonding of the case body and the rim of the cap, and making adjustments to align both parts. CONSTITUTION:A junction between the body 1 of an airtight sealing case and the cap 6 thereof is airtightly sealed with brazing material 10. This junction is provided with a mechanism 9 to relieve stress produced during this airtight sealing process. The stress relief mechanism is constituted of a combination of a looped body provided with a continuous groove and parts in a shape corresponding to that of the groove.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体チップ等の電子
部品を収納する電子部品用気密封止容器に関するもので
ある。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hermetically sealed container for electronic parts for housing electronic parts such as semiconductor chips.

【0002】[0002]

【従来の技術】従来、半導体チップ等の電子部品の気密
封止容器において、気密封止容器基体上の配線層にフェ
イスダウンして接続した半導体チップ等の裏面をキャッ
プの底面にろう材によって接着し、半導体チップ等の動
作によって発生する熱をキャップを通して放熱し、他
方、キャップの縁部と気密封止容器基体の間をろう材に
よって接着して気密封止することが知られていた。
2. Description of the Related Art Conventionally, in a hermetically sealed container for electronic parts such as a semiconductor chip, the back surface of the semiconductor chip or the like, which is connected face down to the wiring layer on the base of the hermetically sealed container, is adhered to the bottom surface of the cap by a brazing material. However, it has been known that heat generated by the operation of the semiconductor chip or the like is radiated through the cap, while the edge portion of the cap and the base of the hermetically sealed container are adhered by a brazing material to hermetically seal them.

【0003】[0003]

【発明が解決しようとする課題】ところが、従来は、半
導体チップ等の電子部品の裏面とキャップの底面の間の
ろう材による接着と、キャップの縁部と気密封止容器基
体の間のろう材による接着の2点接着を同一工程によっ
て行うことは後に説明する理由によって困難であった。
However, conventionally, a brazing material between the back surface of the electronic component such as a semiconductor chip and the bottom surface of the cap by a brazing material, and a brazing material between the edge portion of the cap and the hermetically sealed container substrate. It has been difficult to perform the two-point bonding by the same process in the same step for the reason described later.

【0004】図4(A)〜(C)は、従来の電子部品用
気密封止容器の封止工程の説明図である。この図におい
て、21は気密封止容器基体、22は接続ピン、23は
TABのインナーリード、24は半導体チップ、25は
接続用バンプ、26はキャップ、27はろう材、28は
メタライズ層、29はろう材である。
4 (A) to 4 (C) are explanatory views of a conventional sealing process of a hermetically sealed container for electronic parts. In this figure, 21 is a hermetically sealed container base, 22 is a connecting pin, 23 is a TAB inner lead, 24 is a semiconductor chip, 25 is a connecting bump, 26 is a cap, 27 is a brazing material, 28 is a metallized layer, 29 Is a brazing material.

【0005】この図4(A)に示された従来の気密封止
容器において、半導体チップの裏面とキャップの底面の
間のろう材による接着と、キャップの縁部と気密封止容
器基体の間のろう材による接着の2点接着を同一工程に
よって行うには、接続ピン22を有する多層セラミック
配線層である気密封止容器基板21の上に形成されたT
AB(Tape Automated Bondin
g)のインナーリード23に、接続用バンプ25によっ
て半導体チップ24をフェイスダウンして接続し、その
半導体チップ24の裏面にろう材27を置き、その気密
封止容器基体21のキャップの縁部を封止する部分に
も、同様のろう材29を置き、加熱してろう材27と2
9が溶融したとき、キャップ26を被せて半導体チップ
24の裏面とキャップ26の底面が密着するように圧力
を加えると同時に、気密封止容器基体21の上のキャッ
プの縁部にも圧力を加えることが必要である。
In the conventional hermetically sealed container shown in FIG. 4A, adhesion between the back surface of the semiconductor chip and the bottom surface of the cap by a brazing material and between the edge of the cap and the hermetically sealed container base. In order to perform the two-point bonding of the brazing filler metal in the same step, the T formed on the hermetically sealed container substrate 21 which is the multilayer ceramic wiring layer having the connection pins 22.
AB (Tape Automated Bondin
The semiconductor chip 24 is face-down connected to the inner lead 23 of g) by the connecting bump 25, the brazing material 27 is placed on the back surface of the semiconductor chip 24, and the edge of the cap of the hermetically sealed container base 21 is fixed. A similar brazing material 29 is also placed on the sealing portion and heated to form brazing materials 27 and 2
When 9 is melted, pressure is applied to cover the back surface of the semiconductor chip 24 and the bottom surface of the cap 26 when the cap 26 is covered, and at the same time, pressure is applied to the edge portion of the cap on the hermetically sealed container base 21. It is necessary.

【0006】ところが、半導体チップ24自体の厚さの
ばらつき、あるいは、半導体チップ24の種類による厚
さの違い、および、インナーリード23への固着の際生
じる高さのばらつきを除くことはできず、そのため、図
4(B)のように、半導体チップ24の裏面の高さが高
いときは、気密封止容器基体21とキャップ26の縁部
の間の接着が不完全で、時として間隙を残すことがあ
り、完全な気密封止を達成することができなかった。
However, it is impossible to exclude variations in the thickness of the semiconductor chip 24 itself, differences in the thickness depending on the type of the semiconductor chip 24, and variations in the height that occur when the semiconductor chip 24 is fixed to the inner leads 23. Therefore, as shown in FIG. 4B, when the height of the back surface of the semiconductor chip 24 is high, the adhesion between the hermetically sealed container base 21 and the edge of the cap 26 is incomplete, and sometimes a gap is left. In some cases, a perfect hermetic seal could not be achieved.

【0007】また、半導体チップ24の裏面の高さが低
いときは、図4(C)のように、気密封止容器基体21
とキャップ26の縁部の間の接着部分に圧力が集中し
て、必要以上の圧力がかかり、気密封止容器基体21が
割れてしまうか、残留応力によってその後の温度変化に
耐えられない品質問題を引き起こす可能性があった。
When the height of the back surface of the semiconductor chip 24 is low, as shown in FIG.
The pressure concentrates on the bonded portion between the edge portion of the cap 26 and the cap 26, and the pressure is applied more than necessary, the airtightly sealed container base 21 is cracked, or the residual stress causes a quality problem in which it cannot withstand the subsequent temperature change. Could cause.

【0008】そして、上記の縦方向の応力のほかに、キ
ャップに圧力をかけるときキャップの縁部が外方に拡張
し、圧力を取り除くとき内方に収縮するため、気密封止
容器基体には横方向の応力も生じていた。
In addition to the above-mentioned longitudinal stress, the edge of the cap expands outward when pressure is applied to the cap, and contracts inward when pressure is removed. Lateral stress was also generated.

【0009】すなわち、従来の気密封止容器の封止部分
の構造では、半導体チップの裏面とキャップの底面の間
のろう材による接着と、気密封止容器基体21とキャッ
プの縁部の間の気密接着を同一工程によって行う場合の
寸法誤差を緩和することが不可能であった。
That is, in the structure of the sealing portion of the conventional hermetically sealed container, the adhesion between the back surface of the semiconductor chip and the bottom surface of the cap by the brazing material and the gap between the hermetically sealed container base 21 and the edge portion of the cap. It was impossible to reduce the dimensional error when airtight adhesion was performed in the same process.

【0010】本発明は、半導体チップ等の電子部品の裏
面とキャップの底面の間の熱的結合を行うための接着
と、気密封止容器基体とキャップの縁部の間の気密接着
を同時に行い、しかも、両部材間の位置ずれを調整して
品質上有害な残留応力を残さない気密封止容器を提供す
ることを目的とする。
According to the present invention, the adhesion for thermally coupling the back surface of the electronic component such as a semiconductor chip and the bottom surface of the cap and the airtight adhesion between the hermetically sealed container substrate and the edge portion of the cap are simultaneously performed. Moreover, it is an object of the present invention to provide a hermetically sealed container in which the positional displacement between both members is adjusted and no residual stress that is harmful to quality is left.

【0011】[0011]

【課題を解決するための手段】本発明にかかる電子部品
用気密封止容器においては、気密封止容器基体とキャッ
プをろう材によって気密封止する部分に、該気密封止を
行うときに生じる応力を緩和する機構を採用した。
In the hermetically sealed container for electronic parts according to the present invention, it occurs when the hermetically sealed container base and the cap are hermetically sealed with the brazing material. A mechanism to relieve stress is adopted.

【0012】この場合、気密封止を行うときに生じる応
力を緩和する機構として、気密封止容器基体、あるい
は、キャップの縁部に形成され、連続した溝を有する部
材と、該溝に適合する形状の環状体を採用した。
In this case, as a mechanism for relieving the stress generated at the time of hermetically sealing, a member having a continuous groove formed on the edge portion of the hermetically sealed container base body or the cap is fitted to the member. A ring-shaped body has been adopted.

【0013】また、本発明にかかる電子部品用気密封止
容器の封止方法においては、気密封止容器基体とキャッ
プをろう材によって気密封止する部分に、該気密封止を
行うため該ろう材を溶融したとき、該キャップの縁部が
該気密封止容器基体に接触しない機構を設けておき、ろ
う材が凝固する過程で、該気密封止容器基体と該キャッ
プとの間に発生する応力を緩和する工程を採用した。
Further, in the method for sealing an airtight container for electronic parts according to the present invention, since the airtight sealing is performed at a portion where the base of the airtight container and the cap are hermetically sealed by the brazing material, the brazing is performed. A mechanism is provided so that the edge of the cap does not come into contact with the hermetically sealed container base when the material is melted, and occurs between the hermetically sealed container base and the cap in the process of solidifying the brazing material. The process of relieving stress was adopted.

【0014】[0014]

【作用】本発明のように、気密封止容器基体とキャップ
をろう材によって気密封止する部分を、例えば、連続し
た溝を有する部材と、この溝に適合する形状の環状体に
よって構成すると、ろう材が溶融しているとき、気密封
止容器基体とキャップの縁部の間に拘束がなくなるた
め、気密封止を行うときに生じる応力を緩和することが
できる。
When the portion for hermetically sealing the base of the hermetically sealed container and the cap with the brazing material as in the present invention is composed of, for example, a member having a continuous groove and an annular body having a shape conforming to the groove, When the brazing material is melted, there is no constraint between the hermetically sealed container base and the edge of the cap, so that the stress generated when hermetically sealing can be relieved.

【0015】[0015]

【実施例】以下、本発明の実施例を図面に基づいて説明
する。 (第1実施例)図1は、第1実施例の電子部品用気密封
止容器の説明図である。この図において、1は気密封止
容器基体、2は接続ピン、3はTABのインナーリー
ド、4は半導体チップ、5は接続用バンプ、6はキャッ
プ、7はろう材、8はメタライズ層、9は応力緩和機
構、10はろう材である。
Embodiments of the present invention will be described below with reference to the drawings. (First Embodiment) FIG. 1 is an explanatory view of a hermetically sealed container for electronic parts according to the first embodiment. In this figure, 1 is a hermetically sealed container substrate, 2 is a connection pin, 3 is a TAB inner lead, 4 is a semiconductor chip, 5 is a connection bump, 6 is a cap, 7 is a brazing material, 8 is a metallized layer, 9 Is a stress relaxation mechanism, and 10 is a brazing material.

【0016】本実施例の気密封止容器およびその封止方
法を説明すると、多数の接続ピン2を有する多層セラミ
ック配線層である気密封止容器基板1の上に形成された
TABのインナーリード3に、接続用バンプ5によって
半導体チップ4を接続し、その半導体チップ4の裏面に
ろう材7を置き、その気密封止容器基体1のキャップの
縁部を封止する部分に配置した連続した溝を有する環状
体である応力緩和機構9の溝の中にも、同様のろう材1
0を置き、加熱してろう材7、10を溶融し、キャップ
6を被せて半導体チップ4の裏面とキャップ6の底面が
密着するように圧力を加える。
The hermetically sealed container of this embodiment and the sealing method thereof will be described. The inner lead 3 of the TAB formed on the hermetically sealed container substrate 1 which is a multilayer ceramic wiring layer having a large number of connection pins 2. , The semiconductor chip 4 is connected by the connecting bumps 5, the brazing material 7 is placed on the back surface of the semiconductor chip 4, and the continuous groove is arranged in the portion for sealing the edge of the cap of the hermetically sealed container base 1. In the groove of the stress relaxation mechanism 9 which is an annular body having
0 is placed, the brazing filler metals 7 and 10 are melted by heating, the cap 6 is covered, and pressure is applied so that the back surface of the semiconductor chip 4 and the bottom surface of the cap 6 come into close contact with each other.

【0017】このとき、キャップの縁部は、気密封止容
器基体1の上に配置された応力緩和機構9の溝の中の溶
融したろう材に浸漬され自由に移動できるから、半導体
チップ4の裏面の高さにばらつきがあっても、あるい
は、横方向に位置ずれが生じても、気密封止容器基体に
応力が発生することはない。
At this time, the edge portion of the cap is immersed in the molten brazing filler metal in the groove of the stress relaxation mechanism 9 arranged on the hermetically sealed container base body 1 and can move freely. Even if there is a variation in the height of the back surface or a lateral displacement occurs, no stress is generated in the hermetically sealed container body.

【0018】本実施例において、半導体チップの背面、
キャップの底面、応力緩和機構である、環状体の溝の内
側、キャップの縁部は、予めろう材であるはんだによっ
てメッキされているか、または、はんだ濡れ性がよいも
ので表面仕上げされていることが望ましい。
In the present embodiment, the back surface of the semiconductor chip,
The bottom surface of the cap, the inner side of the groove of the annular body, which is a stress relaxation mechanism, and the edge of the cap are plated with solder which is a brazing material in advance, or have a surface finish with a material having good solder wettability. Is desirable.

【0019】そして、キャップの縁部が応力緩和機構の
V字型またはU字型の溝に収まる寸法であること、溝の
深さおよび幅は前述の半導体チップの裏面の高さのばら
つきや、キャップの横方向の変形を吸収するのに充分で
あり、かつ、ろう材によってキャップを充分な強度で固
定するに足る深さであることが必要である。
Then, the edge portion of the cap is dimensioned to fit in the V-shaped or U-shaped groove of the stress relaxation mechanism, and the depth and width of the groove have variations in height of the back surface of the semiconductor chip, It must be deep enough to absorb the lateral deformation of the cap and deep enough to secure the cap with brazing material with sufficient strength.

【0020】また、この応力緩和機構の底面が気密封止
容器基体と必要な強度で固着されるに充分な面積を持っ
ていることが必要である。本実施例の応力緩和機構の底
面が気密封止容器基体と他の部分のろう材と同じ融点を
もつろう材で接着されていると、封止工程において、応
力緩和機構自体が横方向に滑動するから、横方向の大き
なずれもここで吸収される。
Further, it is necessary that the bottom surface of this stress relaxation mechanism has an area sufficient to be fixed to the hermetically sealed container substrate with a required strength. If the bottom surface of the stress relaxation mechanism of this embodiment is adhered to the hermetically sealed container substrate with a brazing material having the same melting point as the brazing material of other parts, the stress relaxation mechanism itself slides laterally in the sealing process. Therefore, a large lateral shift is also absorbed here.

【0021】本実施例によると、ろう材が溶融している
間に、半導体チップとキャップを平面内で相対的に振動
(スクラブ)させることができ、半導体チップの裏面と
キャップの底面との間のろう材の濡れ性を改善すること
が可能である。
According to this embodiment, the semiconductor chip and the cap can be relatively vibrated (scrubbed) in a plane while the brazing material is melted, and the semiconductor chip and the cap can be relatively scrubbed with each other between the back surface of the semiconductor chip and the bottom surface of the cap. It is possible to improve the wettability of the brazing material.

【0022】また、本発明を、キャップの外側にフィン
を取りつけて放熱効果を向上する形式の電子部品用気密
封止容器に適用すると、そのキャップの底面が弾性や塑
性を失い剛性をもつため、さらに有効である。
When the present invention is applied to a hermetically sealed container for electronic parts of the type in which fins are attached to the outside of the cap to improve the heat radiation effect, the bottom surface of the cap loses elasticity and plasticity and has rigidity, It is even more effective.

【0023】つぎに、上記の応力緩和機構の具体的な他
の構造を説明する。図2(A)〜(D)、図3(E)〜
(H)は、他の実施例の応力緩和機構の構成説明図であ
る。この図において、11は気密封止容器基体、12は
キャップ、13〜20は応力緩和機構である。
Next, another specific structure of the above stress relaxation mechanism will be described. 2 (A)-(D), FIG. 3 (E)-
(H) is an explanatory view of a structure of a stress relaxation mechanism of another embodiment. In this figure, 11 is a hermetically sealed container base, 12 is a cap, and 13 to 20 are stress relaxation mechanisms.

【0024】 (第2実施例)(図2(A)参照) この実施例においては、応力緩和機構13として、気密
封止容器基体11に設けられた円筒状の環状部材と、キ
ャップ12の円筒状縁部の間にろう材を保持した構成を
採用している。この実施例は、主として、縦方向の位置
ずれによる応力を吸収する効果を奏する。
Second Embodiment (see FIG. 2A) In this embodiment, as the stress relaxation mechanism 13, a cylindrical annular member provided on the hermetically sealed container base 11 and a cylinder of the cap 12 are provided. The brazing material is held between the edges. This embodiment mainly has an effect of absorbing the stress due to the displacement in the vertical direction.

【0025】 (第3実施例)(図2(B)参照) この実施例においては、応力緩和機構14として、気密
封止容器基体11に設けられた2重の円筒状の環状部材
と、キャップ12の円筒状縁部を組合せ、2重の円筒状
の環状部材の中にろう材を保持した構成を採用してい
る。
(Third Embodiment) (See FIG. 2B) In this embodiment, as the stress relaxation mechanism 14, a double cylindrical annular member provided on the hermetically sealed container base 11 and a cap are used. Twelve cylindrical edges are combined and a brazing material is held in a double cylindrical annular member.

【0026】 (第4実施例)(図2(C)参照) この実施例においては、応力緩和機構15として、気密
封止容器基体11に設けられた円筒状の環状部材と、キ
ャップ12の縁部に形成した溝状部材を組合せ、溝状部
材の中にろう材を保持した構成を採用している。なお、
この実施例の封止工程は、倒立して行う。
(Fourth Embodiment) (See FIG. 2C) In this embodiment, as the stress relaxation mechanism 15, a cylindrical annular member provided on the hermetically sealed container base 11 and the edge of the cap 12 are provided. The groove-shaped members formed in the section are combined, and the brazing material is held in the groove-shaped members. In addition,
The sealing process of this embodiment is performed upside down.

【0027】 (第5実施例)(図2(D)参照) この実施例においては、応力緩和機構16として、気密
封止容器基体11に穿設した溝とキャップ12の円筒状
の縁部を組合せ、溝の中にろう材を保持した構成を採用
している。
(Fifth Embodiment) (See FIG. 2D) In this embodiment, as the stress relaxation mechanism 16, a groove formed in the hermetically sealed container base 11 and a cylindrical edge portion of the cap 12 are provided. Combined, the brazing material is held in the groove.

【0028】 (第6実施例)(図3(E)参照) この実施例においては、応力緩和機構17として、気密
封止容器基体11に設けられ、一端の縁部を折り返した
円筒状部材と、縁部を折り返したキャップ12の円筒状
の縁部を組合せ、折り返した部分にろう材を保持した構
成を採用している。この実施例の封止工程は、一端の縁
部を折り返した円筒状部材と縁部を折り返したキャップ
12の円筒状の縁部を組合せた後に、一端の縁部を折り
返した円筒状部材を気密封止容器基体11に固着するこ
とによって行われる。
(Sixth Embodiment) (See FIG. 3E) In this embodiment, as the stress relaxation mechanism 17, a cylindrical member provided on the hermetically sealed container base 11 and having one end edge folded back is used. The structure is such that the cylindrical edges of the cap 12 having the folded back edges are combined and the brazing material is held at the folded back portions. In the sealing step of this embodiment, after combining the cylindrical member whose one end edge is folded back and the cylindrical edge part of the cap 12 whose end part is folded back, the cylindrical member whose one end edge is folded back is sealed. It is carried out by fixing to the tightly sealed container base 11.

【0029】 (第7実施例)(図3(F)参照) この実施例においては、応力緩和機構18として、気密
封止容器基体11に設けられた傾斜した面をもつ環状部
材と、キャップ12の傾斜した縁部の間にろう材を保持
した構成を採用している。この実施例は、縦方向の位置
ずれとともに横方向の位置ずれに対しても自由度をもっ
ている。
(Seventh Embodiment) (See FIG. 3F) In this embodiment, as the stress relaxation mechanism 18, an annular member having an inclined surface provided on the hermetically sealed container base 11 and the cap 12 are provided. The brazing material is held between the inclined edges of the. This embodiment has a degree of freedom with respect to the positional displacement in the horizontal direction as well as the positional displacement in the vertical direction.

【0030】 (第8実施例)(図3(G)参照) この実施例においては、応力緩和機構19として、気密
封止容器基体11に設けられたL型の環状部材と、キャ
ップ12のL型の縁部の間にろう材を保持した構成を採
用している。この実施例は、縦方向の位置ずれとともに
横方向の位置ずれに対しても大きな自由度をもってい
る。この実施例の封止工程は、L型の環状部材と、キャ
ップ12のL型の縁部を組合せた後に、L型の環状部材
を気密封止容器基体11に固着することによって行われ
る。
(Eighth Embodiment) (See FIG. 3G) In this embodiment, as the stress relaxation mechanism 19, an L-shaped annular member provided on the hermetically sealed container base 11 and an L of the cap 12 are provided. A structure in which a brazing material is held between the edges of the mold is adopted. This embodiment has a large degree of freedom with respect to the positional displacement in the horizontal direction as well as the positional displacement in the vertical direction. The sealing step of this embodiment is performed by combining the L-shaped annular member and the L-shaped edge portion of the cap 12 and then fixing the L-shaped annular member to the hermetically sealed container base 11.

【0031】 (第9実施例)(図3(H)参照) この実施例においては、応力緩和機構20として、気密
封止容器基体11に穿設した斜面をもつ溝とキャップ1
2の円筒状の溝の斜面と同じ方向に傾斜した縁部を組合
せ、溝の中にろう材を保持した構成を採用している。こ
の実施例は、縦方向の位置ずれとともに横方向の位置ず
れに対しても大きな自由度をもっている。
(Ninth Embodiment) (See FIG. 3 (H)) In this embodiment, as the stress relaxation mechanism 20, a groove having an inclined surface formed in the hermetically sealed container base 11 and the cap 1 are used.
The structure in which the brazing material is held in the groove is adopted by combining edge portions inclined in the same direction as the inclined surface of the second cylindrical groove. This embodiment has a large degree of freedom with respect to the positional displacement in the horizontal direction as well as the positional displacement in the vertical direction.

【0032】[0032]

【発明の効果】以上説明したように、本発明によると、
気密封止容器基体に、例えば、TAB方式により固定さ
れた半導体チップ等の電子部品が発生する熱を外部に放
熱するために、その電子部品の背面とキャップの底面を
ろう付けする工程と、気密封止容器基体とキャップの縁
部を気密封止するためにろう付けする工程を、同一工程
で行う場合、半導体チップ等の電子部品や気密封止容器
基体に、品質上有害な歪みや残留応力を残さない電子部
品用気密封止容器を提供することができ、各種電子部品
の気密封止技術分野において寄与するとこが大きい。
As described above, according to the present invention,
A step of brazing the back surface of the electronic component and the bottom surface of the cap to the outside to radiate heat generated by the electronic component such as a semiconductor chip fixed by the TAB method to the airtight sealed container base; If the brazing process for hermetically sealing the edge of the hermetically sealed container base and the cap is performed in the same step, distortion and residual stress harmful to the quality of electronic parts such as semiconductor chips and the hermetically sealed container base It is possible to provide a hermetically sealed container for electronic components that does not leave any of the above, and it is expected to contribute greatly to the technical field of hermetically sealing various electronic components.

【図面の簡単な説明】[Brief description of drawings]

【図1】第1実施例の電子部品用気密封止容器の説明図
である。
FIG. 1 is an explanatory diagram of a hermetically sealed container for electronic parts according to a first embodiment.

【図2】(A)〜(D)は他の実施例の応力緩和機構の
構成説明図(1)である。
2A to 2D are configuration explanatory views (1) of a stress relaxation mechanism of another embodiment.

【図3】(E)〜(H)は他の実施例の応力緩和機構の
構成説明図(2)である。
3 (E) to (H) are configuration explanatory views (2) of a stress relaxation mechanism of another embodiment.

【図4】(A)〜(C)は従来の電子部品用気密封止容
器の封止工程の説明図である。
FIG. 4A to FIG. 4C are explanatory views of a sealing process of a conventional hermetically sealed container for electronic components.

【符号の説明】[Explanation of symbols]

1、11 気密封止容器基体 2 接続ピン 3 TABのインナーリード 4 半導体チップ 5 接続用バンプ 6、12 キャップ 7 ろう材 8 メタライズ層 9、13〜20 応力緩和機構 10 ろう材 1, 11 Airtight sealed container base 2 Connection pin 3 TAB inner lead 4 Semiconductor chip 5 Connection bump 6, 12 Cap 7 Brazing material 8 Metallization layer 9, 13 to 20 Stress relaxation mechanism 10 Brazing material

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 気密封止容器基体とキャップをろう材に
よって気密封止する部分に、該気密封止を行うときに生
じる応力を緩和する機構を具備することを特徴とする電
子部品用気密封止容器。
1. An airtight seal for electronic parts, characterized in that a portion for hermetically sealing a hermetically sealed container base body and a cap with a brazing material is provided with a mechanism for relieving stress generated when the hermetically seal is performed. Stop container.
【請求項2】 気密封止容器基体と、該気密封止容器基
体上に形成された環状体と、縁部が該環状体の側部に適
合する形状を備える該気密封止容器基体のキャップとを
有し、該環状体と該キャップの縁部とがろう材によって
固着されていることを特徴とする請求項1記載の電子部
品用気密封止容器。
2. A hermetically sealed container base, a cap formed on the hermetically sealed container base, an annular body formed on the hermetically sealed container base, and a shape in which an edge portion conforms to a side portion of the annular body. 2. The hermetically sealed container for electronic parts according to claim 1, further comprising: and an annular body and an edge portion of the cap are fixed to each other by a brazing material.
【請求項3】 気密封止容器基体と、該気密封止容器基
体上に形成され、溝を備える環状体と、縁部が該環状体
の溝に適合する形状を備える該気密封止容器基体のキャ
ップとを有し、該環状体の溝に該キャップの縁部が挿入
され、ろう材によって固着されていることを特徴とする
請求項1記載の電子部品用気密封止容器。
3. A hermetically sealed container substrate, an annular body formed on the hermetically sealed container substrate and provided with a groove, and an edge portion having a shape adapted to fit in the groove of the annular body. The hermetically sealed container for electronic parts according to claim 1, further comprising: a cap, wherein an edge portion of the cap is inserted into a groove of the annular body and is fixed by a brazing material.
【請求項4】 環状体が、ろう材によって気密封止容器
基体上に固着されていることを特徴とする請求項2また
は請求項3記載の電子部品用気密封止容器。
4. The hermetically sealed container for electronic parts according to claim 2, wherein the annular body is fixed on the hermetically sealed container base by a brazing material.
【請求項5】 気密封止容器基体と、該気密封止容器基
体上に形成された環状体と、縁部に該環状体の形状に適
合する溝を備える該気密封止容器基体のキャップとを有
し、該環状体が該キャップの溝に挿入され、ろう材によ
って固着されていることを特徴とする請求項1記載の電
子部品用気密封止容器。
5. A hermetically sealed container base body, an annular body formed on the hermetically sealed container base body, and a cap of the hermetically sealed container base body provided with a groove conforming to the shape of the annular body at an edge portion. 2. The hermetically sealed container for electronic parts according to claim 1, further comprising: an annular body inserted into a groove of the cap and fixed by a brazing material.
【請求項6】 気密封止容器基体と、該気密封止容器基
体に形成された溝と、縁部が該溝に適合する形状形状を
備える該気密封止容器基体のキャップとを有し、該溝に
該キャップの縁部が挿入され、ろう材によって固着され
ていることを特徴とする請求項1記載の電子部品用気密
封止容器。
6. A hermetically sealed container base, a groove formed in the hermetically sealed container base, and a cap of the hermetically sealed container base having an edge portion having a shape conforming to the groove. The hermetically sealed container for electronic parts according to claim 1, wherein an edge portion of the cap is inserted into the groove and fixed by a brazing material.
【請求項7】 気密封止容器基体とキャップをろう材に
よって気密封止する部分に、該気密封止を行うため該ろ
う材を溶融したとき、該キャップの縁部が該気密封止容
器基体に接触しない機構を設けておき、ろう材が凝固す
る過程で、該気密封止容器基体と該キャップとの間に発
生する応力を緩和することを特徴とする電子部品用気密
封止容器の封止方法。
7. A hermetically sealed container substrate and a cap are hermetically sealed with a brazing material at a portion where the brazing material is melted to perform the hermetic sealing, and an edge portion of the cap has the hermetically sealed container substrate. A mechanism for preventing contact with the airtight seal is provided to relieve stress generated between the base and the cap of the hermetically sealed container during solidification of the brazing filler metal. How to stop.
JP3207754A 1991-08-20 1991-08-20 Electronic part airtight sealing case and sealing method thereof Withdrawn JPH05114662A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3207754A JPH05114662A (en) 1991-08-20 1991-08-20 Electronic part airtight sealing case and sealing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3207754A JPH05114662A (en) 1991-08-20 1991-08-20 Electronic part airtight sealing case and sealing method thereof

Publications (1)

Publication Number Publication Date
JPH05114662A true JPH05114662A (en) 1993-05-07

Family

ID=16544993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3207754A Withdrawn JPH05114662A (en) 1991-08-20 1991-08-20 Electronic part airtight sealing case and sealing method thereof

Country Status (1)

Country Link
JP (1) JPH05114662A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226487A (en) * 1992-02-14 1993-09-03 Nec Corp Semiconductor device
US5889323A (en) * 1996-08-19 1999-03-30 Nec Corporation Semiconductor package and method of manufacturing the same
US6218730B1 (en) * 1999-01-06 2001-04-17 International Business Machines Corporation Apparatus for controlling thermal interface gap distance

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226487A (en) * 1992-02-14 1993-09-03 Nec Corp Semiconductor device
US5889323A (en) * 1996-08-19 1999-03-30 Nec Corporation Semiconductor package and method of manufacturing the same
US6218730B1 (en) * 1999-01-06 2001-04-17 International Business Machines Corporation Apparatus for controlling thermal interface gap distance
US6294408B1 (en) * 1999-01-06 2001-09-25 International Business Machines Corporation Method for controlling thermal interface gap distance

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