JPH05109971A - Lead frame - Google Patents
Lead frameInfo
- Publication number
- JPH05109971A JPH05109971A JP3298044A JP29804491A JPH05109971A JP H05109971 A JPH05109971 A JP H05109971A JP 3298044 A JP3298044 A JP 3298044A JP 29804491 A JP29804491 A JP 29804491A JP H05109971 A JPH05109971 A JP H05109971A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- dimple
- tab
- tab portion
- working
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はリードフレームに関し、
特に、プレス加工によるリードフレームのタブ部のディ
ンプル加工時に生じる加工歪みを抑制したリードフレー
ムに関する。FIELD OF THE INVENTION The present invention relates to a lead frame,
In particular, the present invention relates to a lead frame that suppresses processing distortion that occurs during dimple processing of the tab portion of the lead frame by press processing.
【０００２】[0002]
【従来の技術】ディンプルの形成されたタブ部を有する
リードフレームを使用する従来の半導体装置は、図３に
示されるように、所定の形状，深さおよび大きさを有す
る複数のディンプル３をプレス機等により加工成型ある
いはエッチング等によってタブ部１（半導体素子の組み
付け部）に加工したリードフレームに、半導体素子６の
電極が形成されていない面を接着面として接合材７によ
って接着し、ワイヤ８によってインナーリード９に接続
し、ハッチングで示す部分を封止樹脂１０によって封止
している。2. Description of the Related Art A conventional semiconductor device using a lead frame having a dimple-formed tab portion presses a plurality of dimples 3 having a predetermined shape, depth and size, as shown in FIG. A lead frame processed into a tab portion 1 (assembly portion of a semiconductor element) by machining or etching by a machine or the like is bonded by a bonding material 7 with a surface of the semiconductor element 6 on which an electrode is not formed as an adhesive surface, and a wire 8 Is connected to the inner lead 9 and the portion indicated by hatching is sealed with the sealing resin 10.
【０００３】リードフレームのタブ部１にディンプル３
を形成することによって、モールド成型時にディンプル
３へ封止樹脂１０が入り込み、封止樹脂１０のリードフ
レームに対する喰い付き性を良好にして密着性を向上さ
せるので、パッケージの信頼性が向上する。The dimple 3 is formed on the tab portion 1 of the lead frame.
By forming the above, the sealing resin 10 enters the dimples 3 during molding, and the adhesiveness of the sealing resin 10 to the lead frame is improved and the adhesion is improved, so that the reliability of the package is improved.
【０００４】[0004]
【発明が解決しようとする課題】しかし、従来のリード
フレームによると、タブ部１の加工面に対して形成され
るディンプル３の深さが深い程、封止樹脂１０との喰い
付き特性が良好になる反面、ディンプル３をタブ部１の
加工面に対して深く形成すると加工歪みが生じてリード
フレームがディンプル加工面を外側にしてわん曲するこ
とがあり、このために図４に示すようにタブ部１に半導
体素子６を接合材７によって接着する際に接着面に隙間
１１を生じることがある。この隙間１１を防ぐために反
りを矯正する加工をタブ部１に与えることもあるが充分
ではない。また、タブ部１の素子接着面にも同じように
ディンプル３を形成すると反りの発生を抑えることがで
きるが、素子接着面にディンプル３を形成することは半
導体素子６とタブ部１との良好な接着性を確保させる点
から見て好ましくない。従って、本発明の目的はディン
プル形成によるリードフレームにおけるタブ部の反りを
抑制したリードフレームを提供することにある。However, according to the conventional lead frame, the deeper the dimples 3 formed on the processed surface of the tab portion 1 is, the better the biting property with the sealing resin 10 is. On the other hand, when the dimples 3 are formed deeply with respect to the processed surface of the tab portion 1, processing distortion may occur and the lead frame may be bent with the dimple processed surface facing outward. Therefore, as shown in FIG. When the semiconductor element 6 is bonded to the tab portion 1 by the bonding material 7, a gap 11 may be formed on the bonding surface. The tab portion 1 may be processed to correct the warp in order to prevent the gap 11, but this is not sufficient. Further, when the dimples 3 are similarly formed on the element bonding surface of the tab portion 1, warpage can be suppressed. However, forming the dimples 3 on the element bonding surface is preferable for the semiconductor element 6 and the tab portion 1. It is not preferable from the viewpoint of ensuring good adhesiveness. Therefore, an object of the present invention is to provide a lead frame in which warp of the tab portion in the lead frame due to dimple formation is suppressed.
【０００５】[0005]
【課題を解決するための手段】本発明はリードフレーム
におけるタブ部の反りを抑制するため、ディンプルが断
面台形の形状を有するリードフレームを提供する。ここ
で、ディンプルとはそれぞれ独立した凹みだけではな
く、所定のピッチで設けられる溝、スリット等をも含む
ものとする。SUMMARY OF THE INVENTION The present invention provides a lead frame in which dimples have a trapezoidal cross section in order to suppress warpage of a tab portion in the lead frame. Here, the dimples include not only independent depressions but also grooves, slits, etc. provided at a predetermined pitch.
【０００６】[0006]
【作用】断面が角錐形，円錐形であると、加工表面の材
料が水平方向に押し拡げられるので、加工表面を外側に
して反りが発生する。このため、本発明のリードフレー
ムは断面台形のディンプルをタブ部に形成している。台
形は角錐形，円錐形の頂部を切り落とした形状であり、
加工表面に平行な面を有する。この平行面の形成によっ
て材料の垂直方向への移動成分が生じる。この移動成分
は素子接着面で水平方向に拡がり、加工表面の水平方向
成分とバランスする。これによって反りが抑制される。When the cross section is a pyramid or a cone, the material of the processed surface is expanded in the horizontal direction, so that a warp occurs with the processed surface facing outward. Therefore, in the lead frame of the present invention, dimples having a trapezoidal cross section are formed in the tab portion. The trapezoid is a pyramid or a cone with the top cut off.
It has a plane parallel to the processed surface. Due to the formation of the parallel planes, a moving component in the vertical direction of the material is generated. This moving component spreads horizontally in the element bonding surface and balances with the horizontal component of the processed surface. This suppresses warpage.
【０００７】[0007]
【実施例１】以下、本発明のリードフレームを添付図面
を基に詳細に説明する。図１は本発明の一実施例を示
し、板厚ｔを有するリードフレームのタブ部１の一方の
面を加工面２にディンプル３が形成されている。その表
面よりディンプル３の底部５までの深さをδとし、高さ
をｈとする。本実施例におけるリードフレームは13.4×
5.1mm ，厚み0.2mm の寸法を有する銅板で、タブ部１の
ディンプル３の仮想先端角度は９０°で形成されてお
り、加工面に４１７個のディンプルが加工されている。First Embodiment A lead frame of the present invention will be described in detail below with reference to the accompanying drawings. FIG. 1 shows an embodiment of the present invention in which a dimple 3 is formed on one surface of a tab portion 1 of a lead frame having a plate thickness t and a processed surface 2. The depth from the surface to the bottom 5 of the dimple 3 is δ, and the height is h. The lead frame in this embodiment is 13.4 ×
A copper plate having a size of 5.1 mm and a thickness of 0.2 mm, the dimples 3 of the tab portion 1 are formed with a virtual tip angle of 90 °, and 417 dimples are machined on the machined surface.
【０００８】図２はディンプル３の深さδと板厚ｔの比
δ／ｔが５０％のリードフレームのタブ部１において、
前述の高さｈと板厚ｔの比ｈ／ｔを変化させたときのわ
ん曲（反り）の曲率の変化（１／ρ）を示す。わん曲の
方向は図２において加工面を外側とするものを正方向と
している。FIG. 2 shows that in the tab portion 1 of the lead frame in which the ratio δ / t of the depth δ of the dimple 3 and the plate thickness t is 50%,
The change (1 / ρ) of the curvature of the bending (warping) when the ratio h / t between the height h and the plate thickness t is changed is shown. As for the direction of bending, the direction with the processed surface facing outward in FIG. 2 is the positive direction.
【０００９】板厚ｔに対する先端部４の切り取り量ｈの
比が約１０％ではタブ部１は正方向のわん曲を示してい
るが、その比が約１７％でわん曲を生じない状態とな
る。さらにその比が増加するとタブ部１のわん曲方向が
反転して負方向のわん曲を生じ、先端部４の切り取り量
の増加に従ってタブ部１には負方向のわん曲が大きくな
る。When the ratio of the cut amount h of the tip portion 4 to the plate thickness t is about 10%, the tab portion 1 shows a forward bending, but when the ratio is about 17%, no bending occurs. Become. When the ratio is further increased, the bending direction of the tab portion 1 is reversed to cause negative bending, and as the cut amount of the tip portion 4 increases, the negative bending of the tab portion 1 increases.
【００１０】先端部４の切り取り量の増加に従い、ディ
ンプル３に形成される底部５の面積が増加することによ
って底部周辺のリードフレーム材料が主として深さ方向
へ押し退けられる。この深さ方向の移動成分が加工面と
の反対面（素子接着面）で水平方向成分に変わる。この
水平方向成分が加工面と水平方向成分とバランスするの
が前述したｈ／ｔが１７％の時である。なお、リードフ
レームにおけるタブ部のわん曲に関する規格は一般的に
±0.2×10-2（１／mm）であるので安全性を考慮し、先
端部４の切り取り量を17±２％で形成したディンプルに
おいて、わん曲に対する良好な特性を示すことが確認さ
れている。The area of the bottom portion 5 formed on the dimple 3 increases with an increase in the cutting amount of the tip portion 4, so that the lead frame material around the bottom portion is mainly pushed away in the depth direction. This moving component in the depth direction changes to a horizontal component on the surface opposite to the processed surface (element bonding surface). It is when the above-mentioned h / t is 17% that the horizontal component balances with the processed surface and the horizontal component. In addition, since the standard for the bending of the tab portion of the lead frame is generally ± 0.2 × 10 -2 (1 / mm), the cutting amount of the tip portion 4 was set to 17 ± 2% in consideration of safety. It has been confirmed that the dimple exhibits good characteristics with respect to bending.
【００１１】[0011]
【発明の効果】以上説明した通り、本発明のリードフレ
ームによるとディンプルの断面形状を台形にしたので、
タブ部の反りを抑制することができる。As described above, according to the lead frame of the present invention, the dimple has a trapezoidal cross-sectional shape.
The warp of the tab portion can be suppressed.
【図１】図１は本発明の、ディンプル加工されたリード
フレームのタブ部の一実施例を示す断面図である。FIG. 1 is a cross-sectional view showing an embodiment of a tab portion of a dimple-processed lead frame according to the present invention.
【図２】図２は本発明の、リードフレームのタブ部の角
錐の先端部の切り取り量とわん曲曲率の変化を示す説明
図である。FIG. 2 is an explanatory diagram showing changes in the amount of cutting and the curvature of curvature of the tip portion of the pyramid of the tab portion of the lead frame of the present invention.
【図３】図３は従来の、ディンプル加工されたリードフ
レームのタブ部を有する半導体装置の断面図を示す。FIG. 3 is a cross-sectional view of a conventional semiconductor device having a dimple-processed lead frame tab portion.
【図４】図４は従来の、ディンプル加工されたリードフ
レームのタブ部の断面図を示す断面図である。FIG. 4 is a cross-sectional view showing a cross-sectional view of a tab portion of a conventional dimple-processed lead frame.
１ タブ部 ２ 加工面 ３ ディンプル ４ 先端部 ５ 底部 ６ 半導体素子 ７ 接合材 ８ ワイヤ ９ インナーリード １０ 封止材 １１ 隙間 1 Tab Part 2 Processed Surface 3 Dimple 4 Tip Part 5 Bottom Part 6 Semiconductor Element 7 Bonding Material 8 Wire 9 Inner Lead 10 Encapsulating Material 11 Gap
───────────────────────────────────────────────────── フロントページの続き (72)発明者 鈴村 隆志 茨城県土浦市木田余町3550番地 日立電線 株式会社システムマテリアル研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takashi Suzumura 3550 Kidayomachi, Tsuchiura City, Ibaraki Prefecture Hitachi Cable Co., Ltd.
Claims (1)
タブ部の素子固定面の反対の面にディンプル（凹部）を
形成して封止樹脂との接着強度を大にするリードフレー
ムにおいて、 前記ディンプルは断面台形の形状を有することを特徴と
するリードフレーム。1. A lead frame for increasing adhesive strength with a sealing resin by forming dimples (recesses) on a surface of a tab portion provided for fixing a semiconductor element, the surface being opposite to an element fixing surface. Is a lead frame having a trapezoidal cross section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3298044A JPH05109971A (en) | 1991-10-18 | 1991-10-18 | Lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3298044A JPH05109971A (en) | 1991-10-18 | 1991-10-18 | Lead frame |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05109971A true JPH05109971A (en) | 1993-04-30 |
Family
ID=17854403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3298044A Pending JPH05109971A (en) | 1991-10-18 | 1991-10-18 | Lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05109971A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI486597B (en) * | 2013-07-23 | 2015-06-01 |
-
1991
- 1991-10-18 JP JP3298044A patent/JPH05109971A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI486597B (en) * | 2013-07-23 | 2015-06-01 |
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