JPH05105600A - Method for producing alpha-sic whisker - Google Patents

Method for producing alpha-sic whisker

Info

Publication number
JPH05105600A
JPH05105600A JP29502891A JP29502891A JPH05105600A JP H05105600 A JPH05105600 A JP H05105600A JP 29502891 A JP29502891 A JP 29502891A JP 29502891 A JP29502891 A JP 29502891A JP H05105600 A JPH05105600 A JP H05105600A
Authority
JP
Japan
Prior art keywords
raw material
sic
sic whiskers
mixed
carbon black
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29502891A
Other languages
Japanese (ja)
Inventor
Shigeto Mori
繁人 森
Kenji Maniwa
健二 馬庭
Osamu Machida
修 町田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Carbon Co Ltd
Original Assignee
Tokai Carbon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Carbon Co Ltd filed Critical Tokai Carbon Co Ltd
Priority to JP29502891A priority Critical patent/JPH05105600A/en
Publication of JPH05105600A publication Critical patent/JPH05105600A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To industrially produce alpha-SiC whiskers by using ash residue of gramineous plant as a silicon source raw material. CONSTITUTION:Ash residue of rice hulls is mixed with 110-400wt.% carbon material of carbon black to give a raw material system, which is blended with 1-30wt.%, based on the raw material system, of Na2CO3 as a third component. The blended raw material is reacted under heating at 1,300-1,800 deg.C in an N2 atmosphere to form SiC whiskers consisting essentially of a crystal system.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、稲科植物の灰化残渣を
珪素源原料としてα型結晶系のSiCウイスカーを製造
する方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing α-type crystalline SiC whiskers using the ash residue of rice plants as a silicon source material.

【0002】[0002]

【従来の技術】金属、プラスチックス、セラミックス等
の複合強化材料として有用されているSiCウイスカー
の製造技術には多様の方法が知られている。従来の製造
技術を原料系によって分類すると、珪素源にSiC
4 、SiHCl3 、(CH3)4 Siのような分解性珪
素化合物、炭材としてCH4 、C3 8 、CCl4 など
を用いて気相反応させる気相原料法と、SiO2 を含む
固形状の珪素源とカーボン粉末のような炭材を混合する
か、これら成分を複合的に含有する物質を加熱反応させ
る固相原料法とに大別することができる。このうち気相
原料を用いる方法は、ハロゲンや水素などの極めて取扱
いにくいガス状物質を用いるため、工程的および設備的
に工業生産に適さない欠点がある。これに対し、固相原
料法は安定な粉末原料を用いる関係で工業的に有利であ
り、現状では実用的な製造技術とされている。
2. Description of the Related Art Various methods are known in the art of producing SiC whiskers, which are useful as composite reinforcing materials for metals, plastics, ceramics and the like. When the conventional manufacturing techniques are classified according to the raw material system, SiC is used as the silicon source.
l 4, SiHCl 3, (CH 3) 4 decomposable silicon compound such as Si, and the vapor process for gas phase reaction by using a CH 4, C 3 H 8, CCl 4 as the carbonaceous material, the SiO 2 It can be roughly classified into a solid-state raw material method in which a solid-state silicon source containing it is mixed with a carbonaceous material such as carbon powder, or a substance containing these components in a complex manner is heated and reacted. Among them, the method using a gas phase raw material has a drawback that it is not suitable for industrial production in terms of process and equipment, because a gaseous substance such as halogen and hydrogen which is extremely difficult to handle is used. On the other hand, the solid phase raw material method is industrially advantageous because it uses a stable powder raw material, and is currently regarded as a practical manufacturing technique.

【0003】これまで固相原料として用いられている珪
素源原料には、籾殻灰、珪砂、シリカゲル、シラス、カ
レット(ガラス廃粉)等があるが、このうちシリカゲル
のような合成物質を使用する場合には、通常、Fe、C
o、Niなどを含む遷移金属系の化合物を触媒成分とし
て添加することがSiCウイスカーの生成収率を高める
ための重要な要件とされている(例えば特公昭60−4428
0 号公報) 。しかし、籾殻灰のような天然物質を原料と
する場合には、それ自体に少量のFeなどが混在してい
るため特に第3成分として遷移金属化合物を添加しなく
ともSiCウイスカーの生成は円滑に進行する。
The silicon source materials that have been used as solid phase materials so far include rice husk ash, silica sand, silica gel, shirasu, cullet (waste glass powder) and the like. Of these, synthetic materials such as silica gel are used. In the case, usually, Fe, C
The addition of a transition metal-based compound containing o, Ni, etc. as a catalyst component is an important requirement for increasing the yield of SiC whiskers (for example, Japanese Patent Publication No. 60-4428).
No. 0 bulletin). However, when a natural material such as rice husk ash is used as a raw material, since a small amount of Fe and the like is mixed in itself, the generation of SiC whiskers can be smoothly performed without adding a transition metal compound as the third component. proceed.

【0004】ところで、SiCウイスカーには結晶型と
してβ立方晶系とα晶系のものが存在するが、上記のよ
うに遷移金属の成分を含む珪素源原料を使用するとβ型
主体のSiCウイスカーが生成する。籾殻灰を用いる場
合にも同様で、これを原料とする特開昭56−93086 号公
報や特開昭56−109811号公報に記載のある方法でもβ型
SiCウイスカーが生成されている。
[0004] By the way, there are β cubic type and α type crystalline whiskers as crystal types, but when the silicon source raw material containing the component of the transition metal is used as described above, β type SiC whiskers are mainly produced. To generate. The same applies to the case of using rice husk ash, and β-type SiC whiskers are also produced by the method described in JP-A-56-93086 and JP-A-56-109811 using this as a raw material.

【0005】[0005]

【発明が解決しようとする課題】β−SiCウイスカー
は、金属や合金を対象とする強化物質として優れた複合
性能を示すことは実証されているが、近時の研究による
とセラミックス材料の複合強化に対してはβ型よりもα
結晶系において性能向上が顕著であることが解明されて
いる。
It has been demonstrated that β-SiC whiskers have excellent composite performance as a strengthening substance for metals and alloys, but recent research has shown that composite strengthening of ceramic materials is possible. For α rather than β
It has been clarified that the performance improvement is remarkable in the crystal system.

【0006】本発明は、このような技術背景に鑑み、従
来、固相原料系では工業的な製造が困難とされていたα
−SiCウイスカーの生成技術について研究を重ねた結
果、籾殻灰をベースとした原料系に特定量のNa2 CO
3を添加して加熱反応させるとα型主体のSiCウイス
カーが効率よく生成する事実を確認して開発に至ったも
のである。
In view of the above technical background, the present invention has hitherto been difficult to industrially manufacture with a solid-phase raw material system.
-SiC whiskers result generation technique was repeated research about, the specific amount in the raw material systems based on rice husk ash Na 2 CO
The development was made by confirming the fact that α-type SiC whiskers are efficiently formed when 3 is added and heated and reacted.

【0007】したがって、本発明の目的は稲科植物の灰
化残渣を珪素源原料としてα−SiCウイスカーを工業
的に製造する方法を提供することにある。なお、本発明
が対象とするα−SiCウイスカーとは、生成したSi
Cウイスカーに占めるα−SiCの混在率が70%以上の
α結晶系主体の性状を指すものとする。
Therefore, it is an object of the present invention to provide a method for industrially producing α-SiC whiskers by using the ash residue of rice plants as a silicon source material. The α-SiC whiskers targeted by the present invention are the generated Si.
It refers to the property of mainly α crystal system in which the mixture ratio of α-SiC in C whiskers is 70% or more.

【0008】[0008]

【課題を解決するための手段】上記の目的を達成するた
めの本発明によるα−SiCウイスカーの製造方法は、
稲科植物の果実殻もしくは茎を焼却して得られる灰化残
渣にカーボンブラック炭材を配合した原料系に、第3成
分としてNa2 CO3 を前記原料系に対し1〜30重量%
の割合で添加混合し、非酸化雰囲気下1300〜1800℃の温
度域で加熱処理することを構成上の特徴とする。
A method of manufacturing an α-SiC whisker according to the present invention for achieving the above object comprises:
1 to 30% by weight of Na 2 CO 3 as a third component in a raw material system in which carbon black carbonaceous material is blended with an ash residue obtained by incinerating fruit shells or stems of rice plants
The composition is characterized in that the mixture is added and mixed in a ratio of 1) and heat-treated in a temperature range of 1300 to 1800 ° C in a non-oxidizing atmosphere.

【0009】本発明の珪素源原料には、稲、麦、粟など
の穀物類、そのほか葦、茅などを含む各種稲科植物の果
実殻もしくは茎を焼却灰化した粉末が使用される。灰化
処理は、前記の稲科植物を乾燥し、必要に応じて破砕、
裁断したのち電気炉のような加熱装置により600 ℃以上
の温度域で加熱焼却し、引き続き恒量となるまで加熱を
続行することによっておこなわれる。この焼却処理によ
り、稲科植物は約10〜20重量%の残留率でその90%以上
が無定形SiO2 からなる組成の灰化物に転化する。
As the silicon source material of the present invention, powders obtained by incineration and ashing the fruit shells or stems of rice, cereals such as wheat and millet, as well as various rice plants such as reeds and kaya are used. For the ashing treatment, the rice plants are dried and crushed if necessary.
After cutting, it is heated and incinerated by a heating device such as an electric furnace in a temperature range of 600 ° C or higher, and then continued to be heated until a constant weight is reached. By this incineration treatment, rice plants are converted into an ash with a composition of about 10 to 20% by weight and 90% or more of which is composed of amorphous SiO 2 .

【0010】炭材には、石油系あるいは石炭系の重質炭
化水素を熱分解して得られるカーボンブラックが用いら
れる。カーボンブラックの性状としては、特に窒素吸着
比表面積が40m2/g以上で、DBP吸着量が90ml/100g 以
上の微粒子・高ストラクチャー構造のものが有効に使用
される。
As the carbonaceous material, carbon black obtained by thermally decomposing petroleum-based or coal-based heavy hydrocarbons is used. As the properties of carbon black, particularly those having a fine particle / high structure structure having a nitrogen adsorption specific surface area of 40 m 2 / g or more and a DBP adsorption amount of 90 ml / 100 g or more are effectively used.

【0011】灰化残渣からなる珪素源原料とカーボンブ
ラック炭材は適宜な比率で配合して原料系とする。両成
分の配合比率は、灰化残渣に対してカーボンブラック炭
材を少なくとも110 重量%の割合に設定することが必要
で、これを下廻る炭材配合比率ではショット生成が増大
してSiCウイスカーの収率が減退する結果を招く。し
かし、400 重量%を越えるカーボンブラック炭材の配合
はもはや生成反応には関与せず、寧ろ残留炭材の増大に
伴う後処理を煩雑にするため好ましくない。したがっ
て、灰化残渣に対するカーボンブラック炭材の配合範囲
は、110 〜400 重量%の範囲に設定することが望まし
い。
A silicon source material consisting of ash residue and carbon black carbonaceous material are blended at an appropriate ratio to form a raw material system. It is necessary to set the blending ratio of both components to at least 110% by weight of carbon black carbonaceous material with respect to the ash residue, and if the carbonaceous material blending ratio is less than this, shot generation increases and SiC whisker This results in a decrease in yield. However, blending of carbon black carbonaceous material in excess of 400% by weight is no longer involved in the formation reaction, and is rather undesirable because it complicates the post-treatment associated with the increase in residual carbonaceous material. Therefore, it is desirable to set the blending range of the carbon black carbonaceous material to the ash residue to be in the range of 110 to 400% by weight.

【0012】上記の原料系には、第3成分となるNa2
CO3 が添加される。Na2 CO3 は生成するSiCウ
イスカーをα結晶系に転化させるために機能する成分
で、粉末状または水溶液状態で原料系に混合される。こ
の添加量は、原料系に対しNa2 CO3 として1〜30重
量%の範囲に設定する必要がある。添加量が1重量%未
満であるとSiCウイスカーの結晶系がα型主体となら
ず、また30重量%を越えると反応炉内にガラス生成物が
多く付着して操業性が悪化する。
In the above raw material system, Na 2 as a third component is used.
CO 3 is added. Na 2 CO 3 is a component that functions to convert the produced SiC whiskers into the α crystal system, and is mixed with the raw material system in the form of powder or an aqueous solution. The amount of addition needs to be set within the range of 1 to 30% by weight as Na 2 CO 3 with respect to the raw material system. If the amount added is less than 1% by weight, the crystal system of the SiC whiskers is not mainly α-type, and if the amount added exceeds 30% by weight, a large amount of glass products adhere to the reaction furnace and the operability deteriorates.

【0013】原料系と第3成分のNa2 CO3 は十分に
均一分散する状態に混合したのち、黒鉛材で構成された
反応容器に軽く充填して加熱反応に供される。ついで反
応容器を、N2 、Ar等の非酸化性雰囲気に保持された
加熱炉に移し、反応温度域で加熱処理する。加熱炉とし
ては、通常の抵抗加熱炉、アチソン炉またはプッシャー
式管状炉などが適用される。反応温度は、1300〜1800
℃、好ましくは1500〜1700℃の範囲に設定する。
The raw material system and the third component, Na 2 CO 3, are mixed in a sufficiently uniformly dispersed state, and then lightly charged into a reaction vessel made of a graphite material and subjected to a heating reaction. Then, the reaction vessel is transferred to a heating furnace maintained in a non-oxidizing atmosphere such as N 2 or Ar, and heat-treated in the reaction temperature range. As the heating furnace, a normal resistance heating furnace, an Acheson furnace, a pusher type tubular furnace, or the like is applied. The reaction temperature is 1300-1800
℃, preferably set in the range of 1500 ~ 1700 ℃.

【0014】反応後、反応容器中の生成物に残留混在す
る未反応のカーボンブラック炭材を焼却、液相分離など
の手段によって分離除去する。このようにして生成する
SiCウイスカーは、格子欠陥のないα型主体のSiC
針状単結晶で、ショット含有量が少なく優れた伸直性を
呈するものである。
After the reaction, the unreacted carbon black carbonaceous material remaining in the product in the reaction vessel is separated and removed by means such as incineration or liquid phase separation. The SiC whiskers produced in this way are mainly α-type SiC without lattice defects.
It is a needle-shaped single crystal with a small shot content and excellent extensibility.

【0015】[0015]

【作用】本発明のプロセスによれば、稲科植物の灰化残
渣からなる珪素源原料を用いた原料系と第3成分として
添加するNa2 CO3 の組合せによってα−SiCウイ
スカーの効率的な生成が可能になる。したがって、例え
ばシリカゲル、珪砂のような珪素源原料を用いた場合に
は、本発明が対象とするα結晶系主体のSiCウイスカ
ーを生成することはできない。
According to the process of the present invention, by combining a raw material system using a silicon source raw material composed of ash residue of rice plants and Na 2 CO 3 added as a third component, an α-SiC whisker can be efficiently produced. Can be generated. Therefore, when a silicon source material such as silica gel or silica sand is used, the α-crystal-based SiC whiskers targeted by the present invention cannot be produced.

【0016】上記に生成機構については未だ詳しく解明
するに至っていないが、稲科植物を灰化処理して得られ
る特殊性状のSiO2 とNa2 CO3 が反応過程におい
て比較的低温で一旦水ガラスに転化し、この液相からの
結晶成長時にα型の成長核が支配的になる作用に基づく
ものと推測される。
Although the mechanism of formation has not yet been elucidated in detail above, SiO 2 and Na 2 CO 3, which have special characteristics obtained by ashing rice plants, are treated with water glass at a relatively low temperature during the reaction process. It is presumed that this is due to the effect that α-type growth nuclei dominate during the crystal growth from this liquid phase.

【0017】[0017]

【実施例】以下、本発明の実施例を比較例と対比して説
明する。
EXAMPLES Examples of the present invention will be described below in comparison with comparative examples.

【0018】実施例1〜3、比較例1〜3 乾燥した籾殻を電気炉中で600 ℃の温度で加熱し、恒量
となるまで焼却灰化した。得られた灰化残渣は、淡灰色
を呈する微粉末で、残留率が20.5重量%、SiO2 含有
率は91.9重量%であった。この灰化残渣を珪素源原料と
し、炭材として窒素吸着比表面積99m2/g、DBP吸油量
129ml/100gのファーネスカーボンブラックを 143重量%
の割合で配合して原料系とした。
Examples 1 to 3 and Comparative Examples 1 to 3 The dried rice husks were heated in an electric furnace at a temperature of 600 ° C. to be incinerated and ashed to a constant weight. The obtained ashing residue was a fine powder showing a light gray color, and the residual rate was 20.5% by weight and the SiO 2 content rate was 91.9% by weight. This ash residue is used as a silicon source material, and carbonaceous material has a nitrogen adsorption specific surface area of 99 m 2 / g and DBP oil absorption
129ml / 100g of furnace carbon black 143wt%
Was mixed at a ratio of to obtain a raw material system.

【0019】上記の原料系にNa2 CO3 粉末を添加量
を変えて加え、十分に均一分散するまで撹拌混合した。
該混合原料を黒鉛製の反応容器に軽く充填し、黒鉛蓋を
被せて密閉したのち、N2 ガス雰囲気の電気加熱炉中で
1700℃の温度に2時間保持した。加熱反応後、反応容器
から内容物を回収し、大気中 800℃の温度に1時間熱処
理して残留する炭材成分を焼却除去したのち、5%HF
水溶液で洗浄してSiO2 等の不純物を除去した。
Na 2 CO 3 powder was added to the above raw material system in various amounts, and the mixture was stirred and mixed until sufficiently dispersed.
The mixed raw material was lightly filled in a graphite reaction vessel, covered with a graphite lid and sealed, and then in an electric heating furnace in an N 2 gas atmosphere.
The temperature of 1700 ° C was maintained for 2 hours. After the heating reaction, the contents are recovered from the reaction vessel and heat-treated in the atmosphere at a temperature of 800 ° C for 1 hour to incinerate and remove the residual carbonaceous material components, and then 5% HF
It was washed with an aqueous solution to remove impurities such as SiO 2 .

【0020】このようにして得られた各SiCウイスカ
ーの性状を測定し、その結果を第3成分として使用した
Na2 CO3 の添加量と対比させて表1に示した。な
お、SiCウイスカーに占めるα−SiCの混在率は下
式によるα度として示した。 α度=(H1 ×2/H2)×100 但し、H1 はX線回折でCuKαを線源とたときの2θ
34.2deg(α−SiCの単独ピーク、比強度50) の回折線
強度、H2 は同35.6deg(β−SiCとα−SiCの混在
ピーク、比強度が共に100)の回折線強度とする。
The properties of each of the SiC whiskers thus obtained were measured, and the results are shown in Table 1 in comparison with the addition amount of Na 2 CO 3 used as the third component. The α-SiC mixed ratio in the SiC whiskers is shown as α degrees in the following formula. α degree = (H 1 × 2 / H 2 ) × 100 where H 1 is 2θ when CuKα is used as a radiation source in X-ray diffraction.
The diffraction line intensity of 34.2 deg (single peak of α-SiC, specific intensity 50), and H 2 are the diffraction line intensity of 35.6 deg (mixed peak of β-SiC and α-SiC, both specific intensities are 100).

【0021】比較例4 実施例1の珪素源原料をCoCl2 ・6H2 Oを触媒と
して7.0 重量%を含むシリカゲル粉末に変え、その他は
実施例1と同一条件でSiCウイスカーを製造した。得
られたSiCウイスカーの性状を測定し、結果を表1に
併載した。
Comparative Example 4 A SiC whisker was manufactured under the same conditions as in Example 1 except that the silicon source material of Example 1 was changed to silica gel powder containing 7.0% by weight of CoCl 2 .6H 2 O as a catalyst. The properties of the obtained SiC whiskers were measured, and the results are also shown in Table 1.

【0022】[0022]

【表1】 [Table 1]

【0023】表1の結果から、本発明の条件を満たす実
施例においてはいずれもα−SiC混在度が70%を越え
る結晶系を有しており、その他の性状も良好なSiCウ
イスカーが生成されることが認められる。
From the results shown in Table 1, in the examples satisfying the conditions of the present invention, SiC whiskers having a crystal system in which the degree of α-SiC inclusion exceeds 70% and having other good properties are produced. It is recognized that

【0024】[0024]

【発明の効果】以上のとおり、本発明によれば高品位の
α−SiCウイスカーを工業的に製造することができ
る。したがって、セラミックス材を対象とする複合強化
材の製造技術として有用である。
As described above, according to the present invention, a high quality α-SiC whisker can be industrially manufactured. Therefore, it is useful as a manufacturing technology of a composite reinforcing material for ceramic materials.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 稲科植物の果実殻もしくは茎を焼却して
得られる灰化残渣にカーボンブラック炭材を配合した原
料系に、第3成分としてNa2 CO3 を前記原料系に対
し1〜30重量%の割合で添加混合し、非酸化性雰囲気下
1300〜1800℃の温度域で加熱処理することを特徴とする
α−SiCウイスカーの製造方法。
1. A raw material system in which carbon black carbonaceous material is mixed with an ash residue obtained by incinerating the fruit shells or stems of rice plants, and Na 2 CO 3 as a third component is added to the raw material system in an amount of 1 to 3 times. Add and mix at a ratio of 30% by weight in a non-oxidizing atmosphere
A method for producing an α-SiC whisker, which comprises performing heat treatment in a temperature range of 1300 to 1800 ° C.
JP29502891A 1991-10-14 1991-10-14 Method for producing alpha-sic whisker Pending JPH05105600A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29502891A JPH05105600A (en) 1991-10-14 1991-10-14 Method for producing alpha-sic whisker

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29502891A JPH05105600A (en) 1991-10-14 1991-10-14 Method for producing alpha-sic whisker

Publications (1)

Publication Number Publication Date
JPH05105600A true JPH05105600A (en) 1993-04-27

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JP29502891A Pending JPH05105600A (en) 1991-10-14 1991-10-14 Method for producing alpha-sic whisker

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JP (1) JPH05105600A (en)

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