JPH0493837A - Foreign matter detector and manufacture of semiconductor device - Google Patents

Foreign matter detector and manufacture of semiconductor device

Info

Publication number
JPH0493837A
JPH0493837A JP2207755A JP20775590A JPH0493837A JP H0493837 A JPH0493837 A JP H0493837A JP 2207755 A JP2207755 A JP 2207755A JP 20775590 A JP20775590 A JP 20775590A JP H0493837 A JPH0493837 A JP H0493837A
Authority
JP
Japan
Prior art keywords
foreign matter
photomask
pellicle
inspection
foreign
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2207755A
Other languages
Japanese (ja)
Inventor
Hiroo Sato
浩男 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2207755A priority Critical patent/JPH0493837A/en
Publication of JPH0493837A publication Critical patent/JPH0493837A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To reduce integrated inspection times for foreign matter depending on its hard detection rate to be reduced in setting said times by enabling the repeating inspection times to be set optionally in accordance with the faces to be inspected. CONSTITUTION:The integrated inspection times of the foreign matter on a photomask and a pellicle can be optionally set from the viewpoint of the relation between the integrated inspection times and the detection rate. Any of the integrated inspection times of the face to be inspected, such as a photomask, pellicle, or a combination of both, can be optionally programmed, thus need for setting the integrated inspection times high for foreign matter hard to detect can be eliminated.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、フォトマスク及びペリクル表面の異物の検査
に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the inspection of foreign substances on the surfaces of photomasks and pellicles.

[従来の技術] 従来の技術は、試料の被検査面上に斜め方向からレーザ
ービームを照射し、被検査面上を走査させる。この入射
光が被検査面上に付着した異物により散乱する光を光電
子増倍管で検出し、散乱光の強度で異物の大きさをもと
める。
[Prior Art] In the conventional technology, a laser beam is irradiated from an oblique direction onto a surface to be inspected of a sample, and the surface to be inspected is scanned. A photomultiplier tube detects the incident light scattered by foreign matter adhering to the surface to be inspected, and the size of the foreign matter is determined from the intensity of the scattered light.

しかし、異物が微小である場合、散乱光の強度が十分で
なく異物を検出できないことがある。そこで、繰り返し
検査を行いデータの積算を行うことにより高検出率で異
物を検出している。
However, if the foreign object is minute, the intensity of the scattered light may not be sufficient to detect the foreign object. Therefore, foreign objects are detected with a high detection rate by repeatedly inspecting and integrating the data.

[発明が解決しようとする課題及び目的コフォトマスク
上とペリクル上では、問題となる異物の粒径のサイズが
ちがっている。これは、フォトマスクのCrパターン面
とペリクル表面の間はペリクル枠によって数ミリ隔たっ
ているため、投影露光時に焦点位置がフォトマスクのC
r面に有る場合、ペリクル上の異物は転写しにくいため
である。このため、間眩となる異物のサイズは、フォト
マスク上では1ミクロン以上であるのに対してペリクル
上では数十ミクロンとなる。
[Problems and Purposes to be Solved by the Invention The particle sizes of problematic foreign substances are different on the photomask and on the pellicle. This is because the Cr pattern surface of the photomask and the pellicle surface are separated by several millimeters due to the pellicle frame.
This is because foreign matter on the pellicle is difficult to transfer when it is on the r-plane. For this reason, the size of foreign particles that cause dazzling is 1 micron or more on a photomask, whereas it is several tens of microns on a pellicle.

しかし、従来の技術では、検査面に対して積算回数を任
意に設定できないため微小な異物が問題となるフォトマ
スク上の異物に合わせて積算回数を設定しなければなら
ない。
However, in the conventional technology, since the number of integrations cannot be arbitrarily set for the inspection surface, the number of integrations must be set in accordance with the foreign matter on the photomask, where minute foreign matter is a problem.

このため、ペリクル面に対しても同一の積算回数で検査
を行ってしまい無駄な検査おこなっていたと同時に検査
時間もかがっていた。
For this reason, the pellicle surface is also inspected with the same integrated number of times, resulting in wasted inspections and at the same time increasing the inspection time.

また、フォトマスク、及びペリクルの異物検査が終了す
るまでに製品の流動を停止しなければならず、露光装置
の稼動率も低下する。
Furthermore, the flow of the product must be stopped before the foreign matter inspection of the photomask and pellicle is completed, and the operating rate of the exposure apparatus also decreases.

そこで本発明は、この様な問題点を解決するもので、そ
の目的とするところは、フォトマスク及びペリクル面の
検査条件における積算回数を適切に設定できる異物検査
装置を提供するところにある。
SUMMARY OF THE INVENTION The present invention has been made to solve these problems, and its purpose is to provide a foreign matter inspection apparatus that can appropriately set the number of integrations under inspection conditions for photomask and pellicle surfaces.

[課題を解決するための手段] (1)本発明の異物検査装置は、フォトマスク、及フォ
トマスクに装着されたペリクル表面の異物を検査する時
に、異物について検出率を高めるために、繰り返し検査
を行い、データを積算する機能を有する異物検査装置に
おいて、繰り返し検査の回数を検査面に対して、任意に
設定可能なことを特徴とする。
[Means for Solving the Problems] (1) The foreign matter inspection device of the present invention performs repeated inspection in order to increase the detection rate of foreign matter when inspecting foreign matter on the surface of a photomask and a pellicle attached to the photomask. The foreign matter inspection apparatus has a function of performing the above-mentioned tests and integrating the data, and is characterized in that the number of repeated inspections can be arbitrarily set for the inspection surface.

(2)本発明の半導体装置の製造方法は、フォトマスク
、及びフォトマスクに装着されたペリクル表面の異物を
検査する時に、請求項1記載の異物検査装置を用いるこ
とを特徴とする。
(2) A method for manufacturing a semiconductor device according to the present invention is characterized in that the foreign matter inspection apparatus according to claim 1 is used when inspecting foreign matter on the surface of a photomask and a pellicle attached to the photomask.

[実施例コ 本発明では、異物検査の際に試料の被検査面に斜め方向
からレーザービームを照射し被検査面上を走査させ入射
光が被検査面上の異物により散乱する光を光電子増倍管
で検出し、散乱光の強度で異物の大きさをもとめ、また
、異物とフォトマスク上のCrパターンとの識別方法は
、偏光させたレーザービームを照射したときCrパター
ンからの反射波の振動面(電界ベクトル)が90度回転
しているため、90度回転した反射波をフィルターによ
り除去し、異物からの反射波のみを受光し識別するタイ
プの異物検査装置において、異物の検出率を高めるため
に繰り返し検査を行いデータを積算を行う時に、第2図
のフォトマスク上の異物とペリクル上の異物の積算回数
と検出率の関係から、フォトマスクの異物検査とペリク
ルの異物検査における積算回数を任意に設定できるよう
にするため、検査面の設定において検査面がフォトマス
ク面、ペリクル面、フォトマスクとペリクル面の組み合
わせのいずれを選択した場合においても、フォトマスク
面の積算回数、及びペリクル面の積算回数を任意に設定
することが可能なプログラムとした。
[Example 2] In the present invention, when inspecting for foreign objects, a laser beam is irradiated obliquely onto the surface of the sample to be inspected, and the surface to be inspected is scanned. The size of the foreign object is determined by the intensity of the scattered light detected by a multiplier tube, and the method of distinguishing between the foreign object and the Cr pattern on the photomask is based on the reflected wave from the Cr pattern when irradiated with a polarized laser beam. Since the vibration plane (electric field vector) is rotated by 90 degrees, the reflected waves rotated by 90 degrees are removed by a filter, and the foreign object detection rate is improved in a foreign object inspection device that receives and identifies only the reflected waves from foreign objects. When performing repeated inspections and integrating data in order to increase the number of foreign particles, it is important to check the relationship between the detection rate and the number of accumulations of foreign particles on the photomask and foreign particles on the pellicle shown in Figure 2. In order to be able to set the number of times arbitrarily, regardless of whether the inspection surface is selected as a photomask surface, a pellicle surface, or a combination of a photomask and a pellicle surface, The program allows you to arbitrarily set the number of integrations on the pellicle surface.

以上のように、プログラムを変更することによりフォト
マスク、及びペリクル面について適切な積算回数が設定
できるようになり、検査時間も第1図のとうり従来の技
術と比較して12分も短縮できた。
As described above, by changing the program, it is possible to set an appropriate number of integrations for the photomask and pellicle surface, and the inspection time can be reduced by 12 minutes compared to the conventional technology, as shown in Figure 1. Ta.

今回は、本発明について一実施例をもちいて説明したが
、検査面と異物の組み合わせに着目した場合にはフォト
マスクとフォトマスクに装着されたペリクルの異物検査
だけではなく、ペリクルが装着されていないフォトマス
クのCrパターン面とガラス面の異物検査にも十分に応
用可能である。
This time, the present invention was explained using one embodiment, but when focusing on the combination of the inspection surface and foreign matter, it is possible to inspect not only the foreign matter of the photomask and the pellicle attached to the photomask, but also the inspection of the pellicle attached to the photomask. It can also be fully applied to foreign matter inspection on the Cr patterned surface and glass surface of a photomask.

また、本発明は、フォトマスクとフォトマスクに装着さ
れたペリクルの異物検査であれば、半導体装置以外のも
のについても十分な効果を有する。
Furthermore, the present invention has sufficient effects on devices other than semiconductor devices as long as it inspects photomasks and pellicles attached to photomasks for foreign substances.

[発明の効果] 以上、本発明によれば、 (1)フォトマスク、及フォトマスクに装着されたペリ
クル表面の異物を検査する時に、異物について検出率を
高めるために、繰り返し検査を行い、データを積算する
機能を有する異物検査装置において、繰り返し検査の回
数を検査面に対して、任意に設定可能とする。
[Effects of the Invention] As described above, according to the present invention, (1) When inspecting foreign matter on the surface of a photomask and a pellicle attached to the photomask, in order to increase the detection rate of foreign matter, repeated inspections are performed and data are collected. In a foreign substance inspection device having a function of integrating the number of times, the number of repeated inspections can be arbitrarily set for the inspection surface.

光工程においてもスムースに製品が流動する。The product flows smoothly even during the optical process.

(2)フォトマスク、及びフォトマスクに装着されたペ
リクル表面の異物を検査する時に、請求項1記戯の異物
検査装置を用いる。
(2) The foreign matter inspection apparatus according to claim 1 is used when inspecting foreign matter on the surface of a photomask and a pellicle attached to the photomask.

このことにより、検査面にたいして検査条件を適切に設
定することが可能となるため、検出率の低い異物に合わ
せて積算回数を高く設定する必要が無くなった。
This makes it possible to appropriately set the inspection conditions for the inspection surface, so it is no longer necessary to set the number of integrations to a high value in accordance with foreign substances with a low detection rate.

このため、無駄に検査を繰り返すことはなくなり、つま
り検査時間が短縮されスルーブツトが向上するという効
果を有している。
Therefore, unnecessary repetition of inspections is avoided, which has the effect of shortening inspection time and improving throughput.

また、検査時間が短縮されることにより次の露In addition, by shortening the inspection time, the next exposure can be

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明と従来技術における検査時間を示した
図。 第2図は、フォトマスク面上とペリクル面上の異物にお
ける、積算回数と検出率を示したズ。 以  上
FIG. 1 is a diagram showing the inspection time in the present invention and the conventional technology. Figure 2 shows the number of integrations and the detection rate for foreign particles on the photomask surface and the pellicle surface. that's all

Claims (2)

【特許請求の範囲】[Claims] (1)フォトマスク、及び前記フォトマスクに装着され
たペリクル表面の異物を検査する時に、前記異物につい
て検出率を高めるために、繰り返し検査を行い、データ
を積算する機能を有する異物検査装置において、前記繰
り返し検査の回数を検査面に対して、任意に設定可能な
ことを特徴とする異物検査装置。
(1) When inspecting foreign particles on the surface of a photomask and a pellicle attached to the photomask, a foreign particle inspection device has a function of repeatedly inspecting and accumulating data in order to increase the detection rate of the foreign particles. A foreign matter inspection device characterized in that the number of times of the repeated inspection can be arbitrarily set for the inspection surface.
(2)半導体装置製造方法において、フォトマスク、及
び前記フォトマスクに装着されたペリクル表面の異物を
検査する時に、請求項1記載の異物検査装置を用いるこ
とを特徴とする半導体装置の製造方法。
(2) A method for manufacturing a semiconductor device, characterized in that the foreign matter inspection apparatus according to claim 1 is used when inspecting foreign matter on the surface of a photomask and a pellicle attached to the photomask.
JP2207755A 1990-08-06 1990-08-06 Foreign matter detector and manufacture of semiconductor device Pending JPH0493837A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2207755A JPH0493837A (en) 1990-08-06 1990-08-06 Foreign matter detector and manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2207755A JPH0493837A (en) 1990-08-06 1990-08-06 Foreign matter detector and manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH0493837A true JPH0493837A (en) 1992-03-26

Family

ID=16545010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2207755A Pending JPH0493837A (en) 1990-08-06 1990-08-06 Foreign matter detector and manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH0493837A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06324413A (en) * 1993-05-14 1994-11-25 Bandai Co Ltd Stereo camera
JP2011174892A (en) * 2010-02-25 2011-09-08 Canon Inc Inspection apparatus
JP2018082004A (en) * 2016-11-15 2018-05-24 株式会社Sumco Method for setting evaluation criterion of semiconductor wafer, method for evaluating semiconductor wafer, method for evaluating semiconductor wafer manufacturing process, and method for manufacturing semiconductor wafer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06324413A (en) * 1993-05-14 1994-11-25 Bandai Co Ltd Stereo camera
JP2011174892A (en) * 2010-02-25 2011-09-08 Canon Inc Inspection apparatus
JP2018082004A (en) * 2016-11-15 2018-05-24 株式会社Sumco Method for setting evaluation criterion of semiconductor wafer, method for evaluating semiconductor wafer, method for evaluating semiconductor wafer manufacturing process, and method for manufacturing semiconductor wafer
US10261125B2 (en) 2016-11-15 2019-04-16 Sumco Corporation Semiconductor wafer evaluation standard setting method, semiconductor wafer evaluation method, semiconductor wafer manufacturing process evaluation method, and semiconductor wafer manufacturing method

Similar Documents

Publication Publication Date Title
KR20110097878A (en) Methods and systems for detecting defects on a reticle
JPH10247245A (en) Pattern defect inspection device
JPH10221267A (en) Micro-defect inspection method, its device, exposing method, and manufacture of semiconductor substrate
JPS5965428A (en) Foreign substance detector
KR102188625B1 (en) Pattern suppression in logic for wafer inspection
JPH06249791A (en) Flaw inspection apparatus
JPH0493837A (en) Foreign matter detector and manufacture of semiconductor device
JP6119784B2 (en) Foreign object inspection method
JPS61207953A (en) Automatic appearance inspecting device
JP3166320B2 (en) Method and apparatus for inspecting foreign matter in resist coating film
JP2001183309A5 (en)
JP3336392B2 (en) Foreign matter inspection apparatus and method
JP3068636B2 (en) Pattern inspection method and apparatus
JPH01314953A (en) Optical surface inspection apparatus
KR101196707B1 (en) Apparatus and method of inspecting a defect on semiconductor substrate using scattered light
JP2970235B2 (en) Surface condition inspection device
JPH07128250A (en) Foreign matter inspection device for photomask for manufacturing semiconductor device
JPH04249761A (en) Apparatus for inspecting foreign matter
JPH06347415A (en) Particle inspecting device and inspecting method therefor
JPH02216035A (en) Detection of fine particle
JPS5998524A (en) Inspecting apparatus of transparent material
JPH0136577B2 (en)
JPH06258235A (en) Surface inspection device
JPH04103144A (en) Inspection of foreign substance
JPS63193041A (en) Apparatus for inspecting foreign matter