JPH0491401A - Thin-film thermistor and fabrication thereof - Google Patents
Thin-film thermistor and fabrication thereofInfo
- Publication number
- JPH0491401A JPH0491401A JP20609490A JP20609490A JPH0491401A JP H0491401 A JPH0491401 A JP H0491401A JP 20609490 A JP20609490 A JP 20609490A JP 20609490 A JP20609490 A JP 20609490A JP H0491401 A JPH0491401 A JP H0491401A
- Authority
- JP
- Japan
- Prior art keywords
- pair
- thin film
- film thermistor
- thermistor element
- alumina substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 239000010408 film Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 29
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000004020 conductor Substances 0.000 claims abstract description 23
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 238000010411 cooking Methods 0.000 description 9
- 239000011247 coating layer Substances 0.000 description 8
- 238000009413 insulation Methods 0.000 description 7
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Details Of Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は耐熱性の高い薄膜サーミスタに関するもので、
この薄膜サーミスタは電気オーブン、ガスオーブンなど
の温度センサとして利用される。[Detailed Description of the Invention] Industrial Application Field The present invention relates to a thin film thermistor with high heat resistance.
This thin film thermistor is used as a temperature sensor for electric ovens, gas ovens, etc.
従来の技術
第４図に示すように、従来の薄膜サーミスタ素子は、平
板状アルミナ基板１の一方の表面に炭化ケイ素（Ｓ ｉ
Ｃ）などの感温抵抗体膜２と一対の電極膜３，３°を
形成した後、この一対の厚膜電極膜３，３”にＰｔ細線
（直径０．１ｍｎ程度）などの一対の内部リード線４．
４°を接続し、更に硝子被覆層５を形成して構成される
。しかし、この一対の内部リード線４，４°は細線であ
るので、機械的強度が弱く、実用的でない。このためこ
の薄膜サーミスタ素子は外部リード端子に接続されて、
実用に供されていた。外部リード端子は電気絶縁性支持
体６に太いステンレス線（直径１閤程度）などの一対の
外部リード線７，７゛を固定して構成され、薄膜サーミ
スタ素子の一対の内部リード線４，４゛が外部リード端
子の一対の外部リード線７，７′にそれぞれ接続される
。（例えば、特公平２−１４７６１号公報）
発明が解決しようとする課題
前記従来例に示されているように、一対の電極膜３．３
”にＰｔ線などの一対の内部リード線４４゛を接続して
いる。ＳｉＣ薄膜サーミスタは耐熱性に優れ、また広い
温度領域を検出するのに適した抵抗温度特性を有するの
で、０〜３５０°Ｃの温度範囲で使用される温度センサ
としてオーブンなどに実用されている。従って、一対の
内部リード＆’！４．４’ として、耐熱性に優れるｐ
ｔ線、Ｎｉ線が用いられ、一対の内部リード線４，４°
は、通常、溶接法で一対の電極膜３．３”にそれぞれ接
続される手段が用いられる。更に、一対の内部リード線
４，４° と一対の外部リード線７．７との接続も、通
常、溶接法が用いられる。これらの溶接作業は多くの作
業時間を必要とするので、価格が高くなるという課題が
あった。BACKGROUND ART As shown in FIG. 4, a conventional thin film thermistor element has silicon carbide (S i
After forming a temperature sensitive resistor film 2 such as C) and a pair of electrode films 3,3°, a pair of thin Pt wires (about 0.1 mm in diameter) etc. are formed inside the pair of thick film electrode films 3,3''. Lead wire 4.
4° are connected, and a glass coating layer 5 is further formed. However, since the pair of internal lead wires 4 and 4° are thin wires, their mechanical strength is weak and impractical. Therefore, this thin film thermistor element is connected to an external lead terminal,
It was put into practical use. The external lead terminals are constructed by fixing a pair of external lead wires 7, 7, such as thick stainless steel wires (about 1 inch in diameter) to an electrically insulating support 6, and a pair of internal lead wires 4, 4 of the thin film thermistor element. are respectively connected to a pair of external lead wires 7 and 7' of external lead terminals. (For example, Japanese Patent Publication No. 2-14761) Problem to be Solved by the Invention As shown in the conventional example, a pair of electrode films 3.3
A pair of internal lead wires 44, such as Pt wires, are connected to the "." SiC thin film thermistor has excellent heat resistance and resistance temperature characteristics suitable for detecting a wide temperature range, so It is used in ovens, etc. as a temperature sensor used in the temperature range of C.Therefore, as a pair of internal leads &'!4.4'
T wire and Ni wire are used, and a pair of internal lead wires 4, 4°
are usually connected to a pair of electrode membranes 3.3'' by welding.Furthermore, the pair of internal lead wires 4,4° and the pair of external lead wires 7.7 are also connected to each other by welding. Usually, welding methods are used.Since these welding operations require a lot of working time, there is a problem in that they are expensive.
また、一対の内部リード線４と４°の間、あるいは一対
の外部リード線７と７゛の間の絶縁距離は、一対の内部
リード線４と４°の間の平板上アルミナ基板１の沿面距
離または硝子被覆層５の沿面距離で決められるが、この
絶縁距離が５〜１０ｍｍと短い。薄膜サーミスタを電気
オーブンなどの調理機器ので温度センサとして用いたと
き、薄膜サーミスタは調理庫内に配置される。調理庫内
は食品加熱時に多くの水蒸気が発生するので、水蒸気の
過飽和状態になる。この結果、薄膜サーミスタ素子の表
面、すなわち、平板上アルミナ基板１の外表面や硝子被
覆層５の外表面に多くの結露水が付着するので、一対の
内部リード線４と４°の間の絶縁距離が短いと、その間
でリークするという課題があった。In addition, the insulation distance between the pair of internal lead wires 4 and 4° or between the pair of external lead wires 7 and 7 is the creepage distance of the flat alumina substrate 1 between the pair of internal lead wires 4 and 4°. This insulation distance is determined by the distance or the creeping distance of the glass coating layer 5, and is as short as 5 to 10 mm. When a thin film thermistor is used as a temperature sensor in a cooking appliance such as an electric oven, the thin film thermistor is placed inside the cooking cabinet. A large amount of water vapor is generated in the cooking cabinet when food is heated, resulting in a supersaturated state of water vapor. As a result, a lot of condensed water adheres to the surface of the thin film thermistor element, that is, the outer surface of the flat alumina substrate 1 and the outer surface of the glass coating layer 5, so that the insulation between the pair of internal lead wires 4 and 4° If the distance was short, there was a problem of leakage between them.
本発明は上記課題を解決するもので、新規なサーミスタ
構成により、溶接作業を不要にすると共に絶縁距離を長
くすることを目的にしている。The present invention is intended to solve the above-mentioned problems, and aims to eliminate the need for welding and increase the insulation distance by using a new thermistor configuration.
課題を解決するための手段
本発明の薄膜サーミスタは上記目的を達成するために、
薄膜サーミスタ素子と支持体板とから構成され、前記薄
膜サーミスタ素子は平板状アルミナ基板と、前記平板状
アルミナ基板に設けられた一対の貫通口と、前記平板状
アルミナ基板の一方の表面から他の表面にわたり電気的
に導通して、前記貫通口を貫通して配置された一対の導
電性部材と、前記平板状アルミナ基板の前記一方の表面
に前記貫通口を含んで配置された一対の電極膜と、前記
一対の電極膜に積層して配置された感温抵抗体膜とから
構成され、前記支持体板は電気絶縁性板と、前記絶縁性
板の一方の表面に配置された一対のリード線用導体膜と
から構成され、前記薄膜サーミスタ素子の前記平板状ア
ルミナ基板の他の表面に配置された前記一対の導電性部
材と、前記支持体板の一対のリード線用導体膜とをそれ
ぞれ電気的に接続して構成される。Means for Solving the Problems In order to achieve the above objects, the thin film thermistor of the present invention has the following features:
The thin film thermistor element is composed of a thin film thermistor element and a support plate, and the thin film thermistor element includes a flat alumina substrate, a pair of through holes provided in the flat alumina substrate, and a hole that connects one surface of the flat alumina substrate to the other. a pair of conductive members disposed to be electrically conductive across the surface and penetrating the through hole; and a pair of electrode films disposed on the one surface of the flat alumina substrate including the through hole. and a temperature-sensitive resistor film disposed in a laminated manner on the pair of electrode films, and the support plate includes an electrically insulating plate and a pair of leads disposed on one surface of the insulating plate. the pair of conductive members arranged on the other surface of the flat alumina substrate of the thin film thermistor element; and the pair of lead wire conductor films of the support plate, respectively. Consists of electrical connections.
作用
本発明は上述したように、薄膜サーミスタ素子は、平板
状アルミナ基板の一方の表面から他の表面にわたり電気
的に導通するように、一対の貫通口をそれぞれ貫通して
配置された一対の導電性部材と前記平板状アルミナの一
方の表面に形成された一対の電極膜がそれぞれ電気的に
導通している構成である。□他方、電気絶縁性板の一方
の表面に一対のリード線用導体膜を配置した支持体板が
準備される。前記一対のリード線用導体膜は従来の外部
リード線に対応する。この後、前記薄膜サーミスタ素子
の前記平板状アルミナ基板の他の表面にまで貫通してい
る前記一対の導電性部材と前記一対のリード線用導体膜
がそれぞれ電気的に接続されるので、溶接作業を必要と
しない。Operation As described above, the present invention includes a pair of conductive elements arranged through a pair of through holes, respectively, so as to be electrically conductive from one surface of a flat alumina substrate to the other surface. A pair of electrode films formed on one surface of the flexible member and the flat alumina are electrically connected to each other. □On the other hand, a support plate is prepared in which a pair of conductor films for lead wires are arranged on one surface of an electrically insulating plate. The pair of lead wire conductor films correspond to conventional external lead wires. After this, the pair of conductive members penetrating to the other surface of the flat alumina substrate of the thin film thermistor element and the pair of lead wire conductor films are electrically connected, so welding work is performed. does not require.
また、前記薄膜サーミスタ素子を包含して、前記薄膜サ
ーミスタ素子周辺の電気絶縁性板の表面に硝子被覆層を
形成することにより、前記薄膜サーミスタ素子周辺での
前記一対のリード線用導体膜は前記硝子被覆層で完全に
被覆されるので、前記一対のリード線用導体膜の間の絶
縁距離は前記薄膜サーミスタ素子に依存しなくなり、従
って、前記絶縁距離も実質的に長くできる。Further, by forming a glass coating layer on the surface of the electrically insulating plate surrounding the thin film thermistor element, the pair of conductor films for the lead wires around the thin film thermistor element can be covered with the thin film thermistor element. Since it is completely covered with the glass coating layer, the insulation distance between the pair of lead wire conductor films does not depend on the thin film thermistor element, and therefore the insulation distance can also be substantially increased.
実施例
第１図（ａ）、 （ｂ）は、それぞれ本発明の薄膜サー
ミスタの一実施例を示す一部破断分解斜視図、一部破断
斜視図である。Embodiment FIGS. 1(a) and 1(b) are a partially cutaway exploded perspective view and a partially cutaway perspective view, respectively, showing an embodiment of the thin film thermistor of the present invention.
平板状アルミナ基板１の対向する位置に一対の貫通口８
．８”を設けた。平板状アルミナ基板ｌの形状は、幅２
胴、長さ６Ｍ、厚さ０．５鵬、また貫通口８．８°の直
径は０．５ ＋ｎｍとした。この後、平板状アルミナ基
板１の一方の表面から他の表面にわたり電気的に導通す
るように、前記一対の貫通口８．８゛を貫通して導電性
部材９．９°を配置した。導電性部材９，９°は、厚膜
用ペースト、例えば、Ａｇペースト、Ａｇ−Ｐｄペース
ト、Ａｕ−ＰＬペーストなど、を貫通口８．８″に充填
した後、これを焼結して形成した。A pair of through holes 8 are provided at opposing positions of the flat alumina substrate 1.
．． 8".The shape of the flat alumina substrate l has a width of 2
The length of the body was 6M, the thickness was 0.5mm, and the diameter of the through hole 8.8° was 0.5+nm. Thereafter, a conductive member 9.9° was placed through the pair of through holes 8.8° so as to be electrically conductive from one surface of the flat alumina substrate 1 to the other surface. The conductive members 9 and 9° were formed by filling the through hole 8.8″ with thick film paste, for example, Ag paste, Ag-Pd paste, Au-PL paste, etc., and then sintering the paste. .
この後、前記平板状アルミナ基板１の一方の表面に一対
のＡｕ−Ｐｔ厚膜電極膜３．３°を形成した。この一対
の厚膜電極膜３．３′前記一対の導電性部材９．９“と
は、前記一対の導電性部材９．９°の端部で電気的に接
続されている。その後スパッタ法によりＳｉＣ感温抵抗
体膜２を前記平板状アルミナ基板ｌの一方の表面に形成
して、薄膜サーミスタ素子を構成した。Thereafter, a pair of Au-Pt thick film electrode films 3.3° was formed on one surface of the flat alumina substrate 1. The pair of thick film electrode films 3.3' and the pair of conductive members 9.9'' are electrically connected at the ends of the pair of conductive members 9.9°.Then, by sputtering, A SiC temperature sensitive resistor film 2 was formed on one surface of the flat alumina substrate 1 to constitute a thin film thermistor element.
次に、アルミナなどの電気絶縁性板ｌＯの一方の表面に
、厚膜ペーストを用い一対のリード線用導体膜ＩＬ １
１”を印刷して、支持体板を構成した。Next, a thick film paste is applied to one surface of an electrically insulating plate lO made of alumina or the like to form a pair of lead wire conductor films IL1.
1" to form the support plate.
この後、前記薄膜サーミスタの前記一対の導電性部材９
．９”の端部を、前記支持体板の印刷後の前記一対のリ
ード線用導体膜１１．１１’ にそれぞれ密着した。こ
の密着された積層物を空気巾約１００°Ｃで１０分間乾
燥し、次に、空気中７００〜１０００°Ｃで焼成した。After this, the pair of conductive members 9 of the thin film thermistor
．． The ends of each of the 9" were closely attached to the pair of printed lead wire conductor films 11 and 11' of the support plate. The attached laminate was dried for 10 minutes at an air width of about 100°C. , and then fired in air at 700-1000°C.
この密着工程、乾燥工程、焼成工程を経ることにより、
前記一対の導電性部材９，９゛と前記一対のリード線用
導体膜１１．１１’ とは、それぞれ電気的に接続され
る。By going through this adhesion process, drying process, and firing process,
The pair of conductive members 9, 9' and the pair of lead wire conductor films 11, 11' are electrically connected, respectively.
このようにして構成された本発明の薄膜サーミスタは、
前記電気絶縁性板１０が従来の電気絶縁性支持体６に、
前記一対のリード線用導体膜１１．１１が従来の一対の
外部リード線７．７ に、それぞれ対応する。また、従
来の一対の内部リード線４４°は、前記一対の導電性部
材９．９°と前記−対のリード線用導体膜１１．１１”
との接点に対応する。このように本発明の薄膜サーミ
スタでは、溶接作業を全く必要としない。前記一対の導
電性部材９，９゛と前記一対のリード線用導体膜１１．
１１の接続は、密着工程、乾燥工程、焼成工程など生産
性に優れた工程でなされるので、接続の所要時間は従来
の溶接作業に比べ１／２〜１／３に短縮された。The thin film thermistor of the present invention configured in this way is
The electrically insulating plate 10 is attached to a conventional electrically insulating support 6,
The pair of lead wire conductor films 11.11 respectively correspond to the conventional pair of external lead wires 7.7. Further, the conventional pair of internal lead wires 44° is connected to the pair of conductive members 9.9° and the negative pair of lead wire conductor films 11.11”.
Corresponds to the point of contact with. In this way, the thin film thermistor of the present invention does not require any welding work. The pair of conductive members 9, 9' and the pair of lead wire conductor films 11.
Since the connection No. 11 is made through highly productive processes such as adhesion, drying, and firing, the time required for connection is reduced to 1/2 to 1/3 compared to conventional welding work.
本発明の薄膜サーミスタを調理器の温度センサに適用す
る場合、第２図に示すように、前記薄膜サーミスタ素子
を包含して、その周辺の前記電気絶縁性板１０の表面に
硝子被覆層１２を形成することが望ましい。前記硝子被
覆層１２の部分を調理庫内に配置し、前記一対のリード
線用導体膜１１．１１の端部１１Ｂ、 １１’Ｅを調理
庫外に配置することは容易である。調理庫内は食品加熱
時に多くの水蒸気が発生するので、水蒸気の過飽和状態
になる。この結果、薄膜サーミスタの外表面に多くの結
露水が付着するが、調理庫内の薄膜サーミスタ外表面は
前記平板状アルミナ基板ｌと前記硝子被覆層１２のみで
構成され、導電性の部分は外部雰囲気から完全に保護さ
れるので、結露水の付着の影響は受けない。前記一対の
リード線用導体膜１１．１１’ の端部１１Ｅ、 １１
’Ｅは調理庫外に配置されるので、食品加熱に起因する
結露の影響は受けない。When the thin film thermistor of the present invention is applied to a temperature sensor for a cooking appliance, as shown in FIG. It is desirable to form. It is easy to arrange the glass coating layer 12 inside the cooking cabinet and to arrange the ends 11B and 11'E of the pair of lead wire conductor films 11.11 outside the cooking cabinet. A large amount of water vapor is generated in the cooking cabinet when food is heated, resulting in a supersaturated state of water vapor. As a result, a lot of condensed water adheres to the outer surface of the thin film thermistor, but the outer surface of the thin film thermistor inside the cooking cabinet is composed only of the flat alumina substrate l and the glass coating layer 12, and the conductive part is Since it is completely protected from the atmosphere, it is not affected by the adhesion of condensed water. End portions 11E, 11 of the pair of lead wire conductor films 11.11'
'E is located outside the cooking cabinet, so it is not affected by condensation caused by food heating.
しかし、梅雨時期や冬季の台所など、通常の状態でも結
露水の付着が生ずるおそれがある。この場合、前記一対
のリード線用導体膜１１．１１’ の前記端部１１Ｅ、
１１’Ｅを含む電気絶縁性板１０の表面に結露水が付
着し易い。この結露水付着の影響を低減するために、第
３図に示すように、前記端部１１Ｅ、１１”Ｅの間の前
記電気絶縁性板１０に絶縁用貫通口１３を設けることが
好ましい。前記性絶縁用貫通口１３により、前記端部１
１Ｂ、 １１°Ｅの間の絶縁距離が実質的に長くなるか
らである。もちろん、前記絶縁用貫通口１３の代わりに
、凸部や凹部でもよい。However, even under normal conditions, such as in the kitchen during the rainy season or winter, there is a risk that dew condensation may form. In this case, the end portion 11E of the pair of lead wire conductor films 11.11',
Condensation water tends to adhere to the surface of the electrically insulating board 10 including 11'E. In order to reduce the influence of this condensed water adhesion, it is preferable to provide an insulating through hole 13 in the electrically insulating plate 10 between the ends 11E and 11''E, as shown in FIG. 3. The end portion 1 is
This is because the insulation distance between 1B and 11°E becomes substantially longer. Of course, the insulating through hole 13 may be replaced with a convex portion or a concave portion.
なお、前記一対の導電性部材９，９゛は、前記平板状ア
ルミナ基板１の一方の表面から他の表面への導電性を付
与すればよいので、前記一対の導電性部材９．９゛は必
ずしも緻密である必要はない。例えば、前記貫通口８，
８°の内周に沿って、前記導電性部材９．９”が形成さ
れてもよいことは明らかである。Note that the pair of conductive members 9, 9' only need to impart conductivity from one surface to the other surface of the flat alumina substrate 1, so the pair of conductive members 9,9' are It doesn't necessarily have to be precise. For example, the through hole 8,
It is clear that the electrically conductive member 9.9'' may be formed along the 8° inner circumference.
発明の効果
以上述べて来たように、本発明によれば次に示す効果が
得られる。Effects of the Invention As described above, according to the present invention, the following effects can be obtained.
（１）従来の一対の内部リード線に代わり、一対の導電
性部材と一対のリード線用導体膜との接点を用いている
ので、溶接作業を必要としない。(1) In place of the conventional pair of internal lead wires, a contact point between a pair of conductive members and a pair of lead wire conductor films is used, so no welding work is required.
（２） この結果、接続の所要時間は従来の溶接作業
に比べ１／２〜１／３に短縮できる。(2) As a result, the time required for connection can be reduced to 1/2 to 1/3 compared to conventional welding work.
（３）薄膜サーミスタ素子周辺の外表面に多くの結露水
が付着しても、その周辺の外表面は平板状アルミナ基板
と硝子被覆層のみで構成され、導電性の部分は外部雰囲
気から完全に保護されるので、結露水の付着の影響は受
けない。(3) Even if a large amount of condensed water adheres to the outer surface around the thin-film thermistor element, the outer surface around it is composed only of a flat alumina substrate and a glass coating layer, and the conductive part is completely protected from the external atmosphere. Since it is protected, it is not affected by the adhesion of condensed water.
第１図（ａ）、 （ｂ）は本発明の一実施例を示す薄膜
サーミスタの一部破断分解斜視図、一部破断斜視図、第
２図、第３図はそれぞれ本発明の他の実施例を示す薄膜
サーミスタの斜視図、第４図は従来の薄膜サーミスタの
断面図である。
８．８゛・・・・・・一対の貫通口、９，９“・・・・
・・一対の導電性部材、１０・・・・・・電気絶縁性板
、１１．．１１°・・・・・・リード線用導体膜。
代理人の氏名 弁理士 粟野重孝 はか１名第
図
１ど
第
図
ｌ
パー１
９１４０１ （’ｓ）
第
図1(a) and 3(b) are partially cutaway exploded perspective views and partially cutaway perspective views of a thin film thermistor showing one embodiment of the present invention, and FIGS. 2 and 3 are respectively other embodiments of the present invention. A perspective view of a thin film thermistor showing an example, and FIG. 4 is a sectional view of a conventional thin film thermistor. 8.8゛...Pair of through holes, 9,9"...
...Pair of conductive members, 10...Electrical insulating plate, 11. ．． 11°・・・Conductor film for lead wire. Name of agent: Patent attorney Shigetaka Awano (1 person) Figure 1 Part 1 91401 ('s) Figure 1
Claims (4)
、前記薄膜サーミスタ素子は平板状アルミナ基板と、前
記平板状アルミナ基板に設けられた一対の貫通口と、前
記平板状アルミナ基板の一方の表面から他の表面にわた
り電気的に導通して、前記貫通口を貫通して配置された
一対の導電性部材と、前記平板状アルミナ基板の前記一
方の表面に前記貫通口を含んで配置された一対の電極膜
と、前記一対の電極膜に積層して配置された感温抵抗体
膜とから構成され、前記支持体板は電気絶縁性板と、前
記絶縁性板の一方の表面に配置された一対のリード線用
導体膜とから構成され、前記薄膜サーミスタ素子の前記
平板状アルミナ基板の他の表面に配置された前記一対の
導電性部材と、前記支持体板の一対のリード線用導体膜
とをそれぞれ電気的に接続した薄膜サーミスタ。(1) Consisting of a thin film thermistor element and a support plate, the thin film thermistor element includes a flat alumina substrate, a pair of through holes provided in the flat alumina substrate, and one of the flat alumina substrates. a pair of electrically conductive members disposed through the through hole so as to be electrically conductive from one surface to another surface; and a pair of conductive members disposed including the through hole on the one surface of the flat alumina substrate. It is composed of a pair of electrode films and a temperature-sensitive resistor film disposed in a laminated manner on the pair of electrode films, and the support plate includes an electrically insulating plate and a temperature-sensitive resistor film disposed on one surface of the insulating plate. a pair of conductor films for lead wires arranged on the other surface of the flat alumina substrate of the thin film thermistor element; and a pair of conductor films for lead wires of the support plate. A thin film thermistor that is electrically connected to a membrane.
スタ素子の周辺の電気絶縁性板の表面に硝子被覆を形成
した特許請求の範囲第１項記載の薄膜サーミスタ。(2) The thin film thermistor according to claim 1, which includes the thin film thermistor element and has a glass coating formed on the surface of the electrically insulating plate around the thin film thermistor element.
導体膜の間に絶縁用貫通口を設けた特許請求の範囲第２
項記載の薄膜サーミスタ。(3) Claim 2 in which an insulating through hole is provided between a pair of conductor films for lead wires located at the ends of an electrically insulating plate.
Thin film thermistor described in Section 1.
体膜を印刷する工程と、薄膜サーミスタ素子の平板状ア
ルミナ基板の他の表面に配置された一対の導電性部材を
前記印刷された一対のリード線用導体膜にそれぞれ密着
する工程と、前記密着された積層物を乾燥する工程と、
乾燥後、前記積層物を焼成する工程とから成る薄膜サー
ミスタの製造方法。(4) Printing a pair of conductor films for lead wires on one surface of the electrically insulating plate, and printing a pair of conductive members arranged on the other surface of the flat alumina substrate of the thin film thermistor element on the printed surface. a step of closely contacting the pair of lead wire conductor films, and a step of drying the adhered laminate;
A method for manufacturing a thin film thermistor comprising the steps of firing the laminate after drying.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20609490A JPH0491401A (en) | 1990-08-02 | 1990-08-02 | Thin-film thermistor and fabrication thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20609490A JPH0491401A (en) | 1990-08-02 | 1990-08-02 | Thin-film thermistor and fabrication thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0491401A true JPH0491401A (en) | 1992-03-24 |
Family
ID=16517708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20609490A Pending JPH0491401A (en) | 1990-08-02 | 1990-08-02 | Thin-film thermistor and fabrication thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0491401A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6515572B2 (en) | 1997-08-23 | 2003-02-04 | Koninklijke Philips Electronics N.V. | Circuit arrangement comprising an SMD-component, in particular a temperature sensor, and a method of manufacturing a temperature sensor |
-
1990
- 1990-08-02 JP JP20609490A patent/JPH0491401A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6515572B2 (en) | 1997-08-23 | 2003-02-04 | Koninklijke Philips Electronics N.V. | Circuit arrangement comprising an SMD-component, in particular a temperature sensor, and a method of manufacturing a temperature sensor |
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