JPH065404A - Thin film thermistor - Google Patents
Thin film thermistorInfo
- Publication number
- JPH065404A JPH065404A JP4160741A JP16074192A JPH065404A JP H065404 A JPH065404 A JP H065404A JP 4160741 A JP4160741 A JP 4160741A JP 16074192 A JP16074192 A JP 16074192A JP H065404 A JPH065404 A JP H065404A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film thermistor
- insulating support
- brazed
- thermistor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Non-Adjustable Resistors (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は薄膜サーミスタに関する
もので、特に実装の容易な薄膜サーミスタに関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film thermistor, and more particularly to a thin film thermistor which can be easily mounted.
【0002】[0002]
【従来の技術】従来、この種の薄膜サーミスタは、図2
に示すように、平板状アルミナ基板1の一方の表面に一
対の電極膜2a、2bと炭化ケイ素(SiC)などの感
温抵抗体膜3とから成る薄膜サーミスタ素子の一対の電
極膜2a、2bにPt細線(直径0.1mm程度)などの
一対のリード線4a、4bを接続し、更に焼成硝子被覆
層5を形成して構成される。[例えば、長井彪、他 ナ
ショナルテクニカルレポート(National Technical R
eport)Vol.29,(1983)]2. Description of the Related Art Conventionally, a thin film thermistor of this type is shown in FIG.
As shown in FIG. 2, a pair of electrode films 2a, 2b of a thin film thermistor element, which is composed of a pair of electrode films 2a, 2b and a temperature sensitive resistor film 3 such as silicon carbide (SiC), on one surface of a flat alumina substrate 1. Is connected to a pair of lead wires 4a and 4b such as Pt thin wires (diameter of about 0.1 mm), and a baking glass coating layer 5 is further formed. [For example, Bai Nagai, et al. National Technical Report
eport) Vol. 29, (1983)]
【0003】[0003]
【発明が解決しようとする課題】前記従来例に示されて
いるように、一対の電極膜2a、2bにPt線などの一
対のリード線4a、4bを接続している。SiC薄膜サ
ーミスタは耐熱性に優れ、また広い温度領域を検出する
のに適した抵抗温度特性を有するので、0〜500℃の
温度範囲で使用される温度センサとしてオーブンなどに
実用されている。従って、一対のリード線4a、4bと
して、耐熱性に優れるPt線、Ni線が用いられ、ま
た、この一対のリード線4a、4bは、通常、溶接法で
一対の電極膜2a、2bにそれぞれ接続される。溶接接
続は耐熱性に優れるからである。しかし、この溶接強度
は10g以下と弱く、また、素子は小さい(1.8mmx
6.5mmx0.5mm程度)ので、溶接作業およびそれ以
降の取り扱いに細心の注意を要する。このため多くの作
業時間を必要とし、価格が高くなるという問題があっ
た。As shown in the above-mentioned conventional example, a pair of lead wires 4a, 4b such as Pt wires are connected to the pair of electrode films 2a, 2b. Since the SiC thin film thermistor has excellent heat resistance and has a resistance temperature characteristic suitable for detecting a wide temperature range, it has been put to practical use in an oven or the like as a temperature sensor used in a temperature range of 0 to 500 ° C. Therefore, a Pt wire and a Ni wire having excellent heat resistance are used as the pair of lead wires 4a and 4b, and the pair of lead wires 4a and 4b are usually welded to the pair of electrode films 2a and 2b, respectively. Connected. This is because the welded connection has excellent heat resistance. However, this welding strength is as weak as 10g or less, and the element is small (1.8mmx
Since it is about 6.5 mm x 0.5 mm), careful attention is required for welding work and subsequent handling. Therefore, there is a problem that a lot of working time is required and the price becomes high.
【0004】また、焼成硝子被覆層5は一対の電極膜2
a、2bおよび感温抵抗体膜3を保護すると共に一対の
リード線4a、4bの溶接部も保護する。しかし、この
焼成硝子被覆層5は、平板状アルミナ基板1の端部まで
完全に覆わない場合がある。この場合、例えば、結露水
が素子表面や周囲の構成物に付着すると、一対の電極膜
2a、2bとアース間の絶縁性が劣化して、誤動作し易
いという問題があった。The baking glass coating layer 5 is a pair of electrode films 2.
It protects the a and 2b and the temperature sensitive resistor film 3, and also protects the welded portions of the pair of lead wires 4a and 4b. However, the baked glass coating layer 5 may not completely cover the end of the flat alumina substrate 1. In this case, for example, if dew condensation water adheres to the surface of the element or the surrounding components, the insulation between the pair of electrode films 2a and 2b and the ground is deteriorated, and there is a problem that malfunctions are likely to occur.
【0005】本発明はかかる従来の問題点を解消するも
ので、取り扱い易く、かつ焼成硝子被覆層が完全に平板
状アルミナ基板の表面を覆うサーミスタ構成を提供する
ことを目的にしている。The present invention solves the above-mentioned conventional problems, and an object of the present invention is to provide a thermistor structure which is easy to handle and in which the calcined glass coating layer completely covers the surface of the flat alumina substrate.
【0006】[0006]
【課題を解決するための手段】上記課題を解決するため
に、本発明の薄膜サーミスタは、ステンレス板と絶縁性
支持体の中間の熱膨張係数を有する中間金属板を介して
前記ステンレス板と絶縁性支持体とをろう付けし、前記
絶縁性支持体の反ろう付面側の表面に凹部を形成し前記
凹部に薄膜サーミスタ素子を収納し、前記薄膜サーミス
タ素子を被覆して前記絶縁性支持体上に焼成硝子被覆層
を形成したものである。In order to solve the above problems, the thin film thermistor of the present invention is insulated from a stainless steel plate through an intermediate metal plate having a thermal expansion coefficient intermediate between that of the stainless steel plate and the insulating support. And a thin film thermistor element is housed in the recess, and the thin film thermistor element is covered to form the insulating support. The baking glass coating layer is formed on the top.
【0007】[0007]
【作用】本発明は上記した構成によって、薄膜サーミス
タ素子はステンレス板にろう付けされた絶縁性支持体の
凹部に収納されているので、一対のリード線を一対の電
極膜に接続した後、サーミスタ素子に比べ大きな面積の
絶縁性支持体またはステンレス板を取り扱うことがで
き、作業が容易になる。また、焼成硝子被覆層はサーミ
スタ素子を覆って、さらに絶縁性支持体の表面にまで広
がるので、焼成硝子被覆層はサーミスタ素子を完全に覆
うことができる。According to the present invention, since the thin film thermistor element is housed in the concave portion of the insulating support brazed to the stainless steel plate, the thermistor is connected after connecting the pair of lead wires to the pair of electrode films. An insulating support or a stainless steel plate having a larger area than the element can be handled, and the work becomes easy. Further, since the baking glass coating layer covers the thermistor element and further extends to the surface of the insulating support, the baking glass coating layer can completely cover the thermistor element.
【0008】[0008]
【実施例】以下、本発明の実施例を添付図面にもとづい
て説明する。図1は、本発明の薄膜サーミスタの一実施
例を示す断面図である。サーミスタ素子10は絶縁性支
持体11の凹部12に収納される。このとき凹部12は
絶縁性支持体11の端部にまで伸びており、その両端は
開いている。サーミスタ素子10を凹部12に収納した
後、一対のリード線がサーミスタ素子10に接続され
る。なお図1では、平板状アルミナ基板、一対の電極膜
や感温抵抗体膜および一対のリード線は省略されている
が、これらは図2に示した構成と同じように構成される
ことは勿論である。Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a sectional view showing an embodiment of the thin film thermistor of the present invention. The thermistor element 10 is housed in the recess 12 of the insulating support 11. At this time, the recess 12 extends to the end of the insulating support 11, and both ends thereof are open. After housing the thermistor element 10 in the recess 12, a pair of lead wires are connected to the thermistor element 10. Although the flat alumina substrate, the pair of electrode films, the temperature sensitive resistor film, and the pair of lead wires are omitted in FIG. 1, it goes without saying that these are configured in the same manner as the configuration shown in FIG. Is.
【0009】絶縁性支持体11は、アルミナなどのセラ
ミックで構成され、その形状は直径8〜10mm程度で、
円板状でも矩形状でもよい。また、凹部12の深さはサ
ーミスタ素子10の厚さの2〜3倍程度が好ましい。こ
の絶縁性支持体11は中間金属板13を介してろう材層
14によりステンレス板15にろう付けされる。このと
き中間金属板13の熱膨張係数は、ステンレス板15と
アルミナなどの絶縁性支持体11の間の値に選ばれる。
このようにして、ろう付けされた絶縁性支持体11には
クラックが発生しないが、中間金属板13を省略して、
絶縁性支持体11を直接ステンレス板15にろう付けし
た場合、絶縁性支持体11にクラックが発生し易い。ア
ルミナなどのセラミックで構成される絶縁性支持体11
の熱膨張係数は(40〜100)x10-7であり、他
方、ステンレス板10の熱膨張係数は(100〜80)
x10-7であるので、中間金属板13としてチタン金属
やコバール合金が好ましい。The insulating support 11 is made of ceramic such as alumina and has a diameter of 8 to 10 mm.
It may be disk-shaped or rectangular. The depth of the recess 12 is preferably about 2 to 3 times the thickness of the thermistor element 10. The insulating support 11 is brazed to the stainless steel plate 15 by the brazing material layer 14 via the intermediate metal plate 13. At this time, the coefficient of thermal expansion of the intermediate metal plate 13 is selected to be a value between the stainless plate 15 and the insulating support 11 such as alumina.
In this way, no cracks occur in the brazed insulating support 11, but the intermediate metal plate 13 is omitted,
When the insulative support 11 is directly brazed to the stainless steel plate 15, cracks are easily generated in the insulative support 11. Insulating support 11 made of ceramics such as alumina
Has a coefficient of thermal expansion of (40 to 100) × 10 −7 , while the stainless steel plate 10 has a coefficient of thermal expansion of (100 to 80).
Since it is x10 −7 , titanium metal or Kovar alloy is preferable as the intermediate metal plate 13.
【0010】このように構成したとき、絶縁性支持体1
1は、サーミスタ素子10の面積に比べ、4〜6倍の大
きな面積を有するので、リード線を接続した後の取り扱
いが容易になることは明かである。また、この取り扱い
のときに、直接サーミスタ素子10を取り扱わない。例
えば、ピンセットでサーミスタ素子10をつかむなどの
作業がなくなるので、作業ミスによりサーミスタ素子1
0の表面を傷つけることも防止できる。また、焼成硝子
被覆層16は、図1に示すように、サーミスタ素子10
を被覆して、絶縁性支持体11の表面にまで伸びるの
で、サーミスタ素子10が完全に焼成硝子被覆層16で
被覆されることは明かであろう。When configured in this manner, the insulating support 1
Since No. 1 has an area that is 4 to 6 times as large as the area of the thermistor element 10, it is clear that handling after connecting the lead wires is easy. Further, at the time of this handling, the thermistor element 10 is not directly handled. For example, since the work of grasping the thermistor element 10 with tweezers is eliminated, the thermistor element 1 is
It is also possible to prevent the surface of 0 from being damaged. In addition, as shown in FIG. 1, the baking glass coating layer 16 is used for the thermistor element 10.
It will be apparent that the thermistor element 10 is completely covered with the calcined glass coating layer 16 since it covers the surface of the insulative support 11.
【0011】なお、中間金属板13や絶縁性支持体11
のろう付けされる部分のステンレス板15に凹部17を
設けることが好ましい。凹部17が中間金属板13や絶
縁性支持体11の位置決めとして作用するからである。The intermediate metal plate 13 and the insulating support 11
It is preferable to provide a recess 17 in the stainless plate 15 at the portion to be brazed. This is because the recess 17 acts as a positioning for the intermediate metal plate 13 and the insulating support 11.
【0012】[0012]
【発明の効果】以上述べてきたように、本発明によれば
次に示す効果が得られる。 (1)サーミスタ素子は絶縁性支持体の凹部に収納され
るので、それ以降の取り扱いが容易になる。 (2)焼成硝子被覆層はサーミスタ素子を覆って、絶縁
性支持体の表面にまで伸びるので、サーミスタ素子は焼
成硝子被覆層で完全に被覆される。 (3)絶縁性支持体とステンレス板の間に中間金属板を
介して両者をろう付け接続しているので、絶縁性支持体
にクラックが発生しない。As described above, according to the present invention, the following effects can be obtained. (1) Since the thermistor element is housed in the recess of the insulating support, the subsequent handling becomes easy. (2) Since the firing glass coating layer covers the thermistor element and extends to the surface of the insulating support, the thermistor element is completely covered with the firing glass coating layer. (3) Since the insulating support and the stainless steel plate are brazed to each other via the intermediate metal plate, no crack is generated in the insulating support.
【図1】本発明の一実施例における薄膜サーミスタの断
面図FIG. 1 is a sectional view of a thin film thermistor according to an embodiment of the present invention.
【図2】従来の薄膜サーミスタを示す断面図FIG. 2 is a sectional view showing a conventional thin film thermistor.
10 薄膜サーミスタ素子 11 絶縁性支持体 12 凹部 13 中間金属板 14 ろう材層 15 ステンレス板 16 焼成硝子被覆層 DESCRIPTION OF SYMBOLS 10 Thin film thermistor element 11 Insulating support 12 Recess 13 Intermediate metal plate 14 Brazing material layer 15 Stainless steel plate 16 Firing glass coating layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 伊藤 修治 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shuji Ito 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.
Claims (3)
張係数を有する中間金属板を介して前記ステンレス板と
絶縁性支持体とをろう付けし、前記絶縁性支持体の反ろ
う付面側の表面に凹部を形成し、前記凹部に薄膜サーミ
スタ素子を収納し、前記薄膜サーミスタ素子を被覆して
前記絶縁性支持体上に焼成硝子被覆層を形成した薄膜サ
ーミスタ。1. A stainless steel plate and an insulating support body are brazed to each other through an intermediate metal plate having a thermal expansion coefficient intermediate between those of the stainless steel plate and the insulating support body, and the anti-brazing surface of the insulating support body. A thin film thermistor in which a concave portion is formed on the side surface, a thin film thermistor element is housed in the concave portion, the thin film thermistor element is covered, and a baking glass coating layer is formed on the insulating support.
バール合金もしくはチタン金属である請求項1記載の薄
膜サーミスタ。2. The thin film thermistor according to claim 1, wherein the insulating support is alumina, and the intermediate metal plate is Kovar alloy or titanium metal.
レス板に凹部を設けた請求項1記載の薄膜サーミスタ。3. The thin film thermistor according to claim 1, wherein a recess is provided in the stainless steel plate at the portion where the intermediate metal plate is brazed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4160741A JPH065404A (en) | 1992-06-19 | 1992-06-19 | Thin film thermistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4160741A JPH065404A (en) | 1992-06-19 | 1992-06-19 | Thin film thermistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH065404A true JPH065404A (en) | 1994-01-14 |
Family
ID=15721457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4160741A Pending JPH065404A (en) | 1992-06-19 | 1992-06-19 | Thin film thermistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH065404A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8118485B2 (en) * | 2008-09-04 | 2012-02-21 | AGlobal Tech, LLC | Very high speed thin film RTD sandwich |
-
1992
- 1992-06-19 JP JP4160741A patent/JPH065404A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8118485B2 (en) * | 2008-09-04 | 2012-02-21 | AGlobal Tech, LLC | Very high speed thin film RTD sandwich |
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