JPH0485883A - Nonvolatile semiconductor memory device and manufacture thereof - Google Patents

Nonvolatile semiconductor memory device and manufacture thereof

Info

Publication number
JPH0485883A
JPH0485883A JP2200646A JP20064690A JPH0485883A JP H0485883 A JPH0485883 A JP H0485883A JP 2200646 A JP2200646 A JP 2200646A JP 20064690 A JP20064690 A JP 20064690A JP H0485883 A JPH0485883 A JP H0485883A
Authority
JP
Japan
Prior art keywords
formed
gate
pair
source
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2200646A
Inventor
Kenichi Kanazawa
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2200646A priority Critical patent/JPH0485883A/en
Publication of JPH0485883A publication Critical patent/JPH0485883A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To perform high integration with causing no deterioration in the capacity ratio by forming two storage electrodes on a gate oxidation film between a pair of source.drain band region and forming a control electrode between storage electrodes through an insulating film and forming a word line in order to take contact with a control electrode through a contact hole.
CONSTITUTION: Two floating gate 6a are formed on a gate oxidation film 3 between a pair of source/drain diffusion layer 8 band regions, therebetween a control gate 4 is formed through an insulating film 5, thereon the insulating film 5 having a contact hole 9 and a word line 10a is formed to take contact with the control gate 4 therethrough. In this way, since two memory transistors are formed, an integration degree is about doubled as compared with a case where one floating gate exists to a pair of source/drain diffusion layers as in the past so as to allow high integration. 2/3 times Vcc voltage is impressed on the floating gate so that deterioration in the capacity ratio is not caused as compared with the past.
COPYRIGHT: (C)1992,JPO&Japio
JP2200646A 1990-07-26 1990-07-26 Nonvolatile semiconductor memory device and manufacture thereof Pending JPH0485883A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2200646A JPH0485883A (en) 1990-07-26 1990-07-26 Nonvolatile semiconductor memory device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2200646A JPH0485883A (en) 1990-07-26 1990-07-26 Nonvolatile semiconductor memory device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH0485883A true JPH0485883A (en) 1992-03-18

Family

ID=16427862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2200646A Pending JPH0485883A (en) 1990-07-26 1990-07-26 Nonvolatile semiconductor memory device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH0485883A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09172095A (en) * 1995-12-18 1997-06-30 Nec Corp Nonvolatile semiconductor storage device and its manufacturing method and use method
EP1576668A1 (en) * 2002-12-20 2005-09-21 Atmel Corporation Multi-level memory cell with lateral floating spacers
US7568212B2 (en) 2001-05-29 2009-07-28 Sanyo Electric Co., Ltd. Digital broadcasting receiver
US8832737B2 (en) 1998-12-03 2014-09-09 United Video Properties, Inc. Smart channel entry system

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09172095A (en) * 1995-12-18 1997-06-30 Nec Corp Nonvolatile semiconductor storage device and its manufacturing method and use method
US8832737B2 (en) 1998-12-03 2014-09-09 United Video Properties, Inc. Smart channel entry system
US7568212B2 (en) 2001-05-29 2009-07-28 Sanyo Electric Co., Ltd. Digital broadcasting receiver
US7624413B2 (en) 2001-05-29 2009-11-24 Sanyo Electric Co., Ltd. Digital broadcasting receiver
EP1576668A1 (en) * 2002-12-20 2005-09-21 Atmel Corporation Multi-level memory cell with lateral floating spacers
EP1576668A4 (en) * 2002-12-20 2008-03-26 Atmel Corp Multi-level memory cell with lateral floating spacers

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