JPH0484403A - Soft magnetic thin film - Google Patents
Soft magnetic thin filmInfo
- Publication number
- JPH0484403A JPH0484403A JP20030990A JP20030990A JPH0484403A JP H0484403 A JPH0484403 A JP H0484403A JP 20030990 A JP20030990 A JP 20030990A JP 20030990 A JP20030990 A JP 20030990A JP H0484403 A JPH0484403 A JP H0484403A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- soft magnetic
- film
- magnetic thin
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title abstract description 54
- 239000010409 thin film Substances 0.000 title abstract description 40
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 6
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 5
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 4
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 3
- 229910052715 tantalum Inorganic materials 0.000 claims abstract 2
- 239000010408 film Substances 0.000 abstract description 24
- 239000001301 oxygen Substances 0.000 abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 15
- 229910045601 alloy Inorganic materials 0.000 abstract description 8
- 239000000956 alloy Substances 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 6
- 239000007789 gas Substances 0.000 abstract description 6
- 230000035699 permeability Effects 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 4
- 229910000859 α-Fe Inorganic materials 0.000 abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- 238000001552 radio frequency sputter deposition Methods 0.000 abstract description 3
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910000702 sendust Inorganic materials 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 3
- 239000011162 core material Substances 0.000 description 3
- 230000005389 magnetism Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910001337 iron nitride Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000006247 magnetic powder Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Compounds Of Iron (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、高飽和磁束密度と高周波透磁率を持ち、高密
度記録再生用磁気ヘッドのコア材料等に好適な軟磁性薄
膜に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a soft magnetic thin film that has high saturation magnetic flux density and high frequency permeability and is suitable as a core material of a magnetic head for high-density recording and reproduction.
例えばオーディオテープレコーダやＶＴＲ（ビデオテー
プレコーダ）等の磁気記録再生装置においては、記録信
号の高密度化や高品質化等が進められており、この高記
録密度化に対応して、磁気記録媒体として磁性粉にＦｅ
、 Ｃｏ、 Ｎ１等の金属あるいは合金からなる粉末を
用いた。いわゆるメタルテープや９強磁性金属材料を真
空薄膜形成技術によりベースフィルム上に直接被着した
。いわゆる蒸着テープ等が開発され、各分野で実用化さ
れている。For example, in magnetic recording and reproducing devices such as audio tape recorders and VTRs (video tape recorders), the density and quality of recording signals are increasing, and in response to this increase in recording density, magnetic recording media Fe in magnetic powder as
, Co, N1, or other metals or alloys were used. A so-called metal tape or 9 ferromagnetic metal material was deposited directly onto the base film by vacuum thin film formation technology. So-called vapor deposition tapes have been developed and put into practical use in various fields.
〔従来の技術及び発明が解決しようとする課題〕ところ
で、このような所定の保磁力を有する磁気記録媒体の特
性を発揮せしめるためには、磁気ヘッドのコア材料の特
性として、高い飽和磁束密度を有するとともに、同一の
磁気ヘッドで再生を行なおうとする場合においては、高
透磁率を併せて有することが要求される。[Prior art and problems to be solved by the invention] By the way, in order to exhibit the characteristics of a magnetic recording medium having a predetermined coercive force, the core material of the magnetic head must have a high saturation magnetic flux density. If the same magnetic head is to be used for reproduction, it is also required to have high magnetic permeability.
従来は、センダスト合金（Ｐｅ −Ｓｆ −Ａｎ！ 、
Ｂｓｚ １（ＩＫＧ）や、 Ｃｏ系アモルファス合金
などが用いられていたが、センダスト合金は、膜の内部
応力が大きく、また結晶粒が成長し易く厚膜化が難しい
。また、飽和磁束密度Ｂｓがｌ０ＫＧ程度で、今以上の
高密度記録には飽和磁束密度Ｂｓが不充分である。また
、 Ｃｏ系アモルファス合金は特性も良く高飽和磁束密
度Ｂｓのものも作製できるが、４５０℃程度で結晶化し
てしまうため、ヘッド形成する際に高温でガラス接合で
きず、充分な接合強度が得られないという難点があった
。Conventionally, Sendust alloy (Pe-Sf-An!,
Bsz 1 (IKG) and Co-based amorphous alloys have been used, but sendust alloys have large internal stress in the film and crystal grains tend to grow, making it difficult to thicken the film. Further, the saturation magnetic flux density Bs is about 10 KG, which is insufficient for higher density recording. In addition, Co-based amorphous alloys have good properties and can be manufactured with high saturation magnetic flux density Bs, but because they crystallize at around 450°C, glass bonding cannot be performed at high temperatures when forming the head, and sufficient bonding strength cannot be achieved. The problem was that it couldn't be done.
その他の軟磁性材料としては窒化鉄があり。Other soft magnetic materials include iron nitride.
般に、窒素含有雰囲気中で鉄をターゲットとしてイオン
ビーム蒸着あるいはスパッタリング等により薄膜状に形
成される。さらに、この薄膜は必要に応じて熱処理され
ることもあった。しかしながら、この軟磁性薄膜は、熱
処理又は加熱によって保磁力が大幅に上昇してしまい特
性の安定性が不充分であるという問題があった。Generally, it is formed into a thin film by ion beam evaporation or sputtering using iron as a target in a nitrogen-containing atmosphere. Furthermore, this thin film was sometimes heat-treated if necessary. However, this soft magnetic thin film has a problem in that its coercive force increases significantly due to heat treatment or heating, resulting in insufficient stability of characteristics.
特開昭８３−２９９２１９号公報には、このような問題
点を改良せんとした次の軟磁性薄膜が記載されている。Japanese Unexamined Patent Publication No. 83-299219 describes the following soft magnetic thin film that attempts to improve these problems.
ｒＦｅｘ Ｎｙ Ａｚ （ただし＋ Ｘ、Ｙ＋
Ｚは各々組成比を原子％として表し、ＡはＳｔ、 Ａｉ
！、 Ｔａ、 Ｂ。rFex Ny Az (However, + X, Y+
Z represents the composition ratio as atomic %, A represents St, Ai
! , Ta, B.
Ｍｇ、Ｃａ、 Ｓｒ、 Ｂａ、 Ｃｒ、 Ｍｎ
、Ｚｒ、 Ｎｂ、Ｔｉ、Ｍｏ、 Ｖ。Mg, Ca, Sr, Ba, Cr, Mn
, Zr, Nb, Ti, Mo, V.
Ｗ、 Ｈｆ， Ｇａ、 Ｇｅ、希土類元素の少なくとも
１種を表す。）なる組成式で示され、その組成範囲が０
．５≦ｙ≦５．０
０．５≦２≦７．５
Ｘ＋ｙ＋ｚ＝１００
であることを特徴とする軟磁性薄膜。」しかし、特開昭
６３−２９９２１９号公報に記載の軟磁性薄膜もまた熱
処理によって保磁力が上昇するのを避けられない。Represents at least one of W, Hf, Ga, Ge, and rare earth elements. ), and its composition range is 0
．． A soft magnetic thin film characterized in that 5≦y≦5.0 0.5≦2≦7.5 X+y+z=100. However, the soft magnetic thin film described in JP-A No. 63-299219 also inevitably suffers from an increase in coercive force due to heat treatment.
さらに−軸異方性を有していないため高周波における透
磁率を高くすることができないという欠点がある。Furthermore, since it does not have -axis anisotropy, it has the disadvantage that magnetic permeability at high frequencies cannot be increased.
また、製膜条件にもよるが、一般的に結晶質材料は、膜
を付着する過程でセルフシャドウィング効果によって柱
状晶になり易く２粒界部にボイドが形成されるために磁
気的に不連続になり軟磁気特性が劣化してしまう傾向が
ある。このセルフシャドウィング効果は、磁気ヘッドを
作製する際の様に下地に段差がある場合や厚膜化する場
合に特に顕著となり、充分な特性が得られないという難
点があった。In addition, although it depends on the film forming conditions, crystalline materials generally tend to become columnar crystals due to self-shadowing effect during the film deposition process, and voids are formed at the two grain boundaries, making them magnetically inefficient. It tends to become continuous and the soft magnetic properties deteriorate. This self-shadowing effect becomes particularly noticeable when there are steps on the base or when the film is thick, such as when manufacturing a magnetic head, and there is a problem in that sufficient characteristics cannot be obtained.
本発明は、上記従来技術の問題点を改良した軟磁性薄膜
の提供を目的とする。An object of the present invention is to provide a soft magnetic thin film that improves the problems of the prior art described above.
〔課題を解決するための手段及び作用〕本発明によれば
次の軟磁性薄膜により上記目的を達成することができる
。[Means and effects for solving the problems] According to the present invention, the above objects can be achieved by the following soft magnetic thin film.
Ｆｅａ Ｂｂ Ｎｃ Ｏａ （但し、ａ、ｂ、ｃ、ｄ
は各々原子％を示し、 ＢハＺｒ、 Ｈｆ， Ｔｉ、
Ｎｂ、 Ｔａ、 Ｖ。Fea Bb Nc Oa (However, a, b, c, d
each indicates atomic %, BHa Zr, Hf, Ti,
Nb, Ta, V.
Ｎｏ、 Ｗの少なくとも１種以上を表わす。）なる組成
式で示され、その組成範囲は
ｏ＜ｂ≦２０
０くＣ≦２２
０＜ｄ≦ＩＯ
の範囲である軟磁性薄膜。Represents at least one of No. and W. ), and the composition range is o<b≦200, C≦220<d≦IO.
なお、上記組成式において、ａ＋ｂ＋ｃ＋ｄ＝１００（
ａｔ％）である。In addition, in the above compositional formula, a+b+c+d=100(
at%).
上記本発明の軟磁性薄膜は、良好な軟磁気特性を示す。The soft magnetic thin film of the present invention exhibits good soft magnetic properties.
本願出願人は、前記従来技術の問題点を改良するものと
して次の軟磁性薄膜について特許出願を行った（平成１
年特許願第３０４８１１号）。The applicant of this application filed a patent application for the following soft magnetic thin film to improve the problems of the prior art (1999).
Patent Application No. 304811).
ｒＦｅａＢ、Ｎｃ （但し、ａ、ｂ、ｃは各々原子％を
示し、ＢはＺｒ、 Ｈｒ、 ＴＩ、 Ｎｂ、 ＴＢ、
Ｖ、 Ｎｏ、 Ｗの少なくとも１種以上を表わす。）
なる組成式で示され、その組成範囲は
Ｑ＜ｂ≦２０
０＜ｃ≦２２
の範囲（但し１ ｂ≦ ７，５かつＣ５０を除く）であ
ることを特徴とする軟磁性薄膜。」
この軟磁性薄膜は、これを製造する際の熱処理過程を厳
密にコントロールすることによって得られる。これに対
して本発明の軟磁性薄膜は、製造条件に左右される度合
いが少なく安定して得られ、また、製造条件の設定、管
理上極めて有利であり、大量生産にも向いている。rFeaB, Nc (however, a, b, c each indicate atomic %, B is Zr, Hr, TI, Nb, TB,
Represents at least one of V, No, and W. )
1. A soft magnetic thin film characterized in that it has a compositional formula of Q<b≦20 and 0<c≦22 (however, 1 b≦7,5 and excluding C50). ” This soft magnetic thin film is obtained by strictly controlling the heat treatment process during its manufacture. In contrast, the soft magnetic thin film of the present invention is less dependent on manufacturing conditions and can be stably obtained, is extremely advantageous in setting and managing manufacturing conditions, and is suitable for mass production.
本発明の軟磁性薄膜は、 Ｐｅ、 Ｎ及び０と、特定の
添加元素Ｂ、即ち、 Ｚｒ、 Ｈｆ、 ＴＩ、 Ｎｂ、
Ｔａ、 Ｖ。The soft magnetic thin film of the present invention contains Pe, N and 0, and specific additive elements B, namely Zr, Hf, TI, Nb,
Ta, V.
Ｎｏ、 Ｗの少なくとも１種以上の元素とから成り。Consisting of at least one element of No. and W.
これらＦｅとＮとＯと特定の添加元素Ｂ（２種以上も含
む）の囲者は、前記特定の組成範囲内にある。These Fe, N, O, and the specific additive element B (including two or more types) are within the specific composition range.
軟磁性薄膜の前記組成範囲において好ましくは、ｂ≧
０．５かつｃ≧ ０．５とする。ｂ＜０．５又はｃ＜Ｑ
、５の場合にはその存在による効果が発揮されないこと
が多いからである。Preferably, in the composition range of the soft magnetic thin film, b≧
0.5 and c≧0.5. b<0.5 or c<Q
, 5, the effect of its presence is often not exhibited.
前記添加元素Ｂが２０原子％を越えるか、又は。The additive element B exceeds 20 atomic %, or.
Ｎが２２原子％を越える場合には、良好な軟磁性が得ら
れない。If N exceeds 22 atomic %, good soft magnetism cannot be obtained.
酸素は１０原子％まで２例えば０．０１〜１０原子％ま
で存在させることができる。酸素が１０原子％を越える
場合には良好な軟磁性が得られないことが多い。Oxygen can be present up to 10 atom %, for example from 0.01 to 10 atom %. If the oxygen content exceeds 10 atomic %, good soft magnetism is often not obtained.
また、 ＰｅはＣｏ、 Ｎｉ又はＲｕの一種以上で置き
換えることができる。例えば軟磁性薄膜を構成するＦｅ
のうちの３０原子％程度まで置き換えることができる。Moreover, Pe can be replaced with one or more of Co, Ni, or Ru. For example, Fe constituting a soft magnetic thin film
It is possible to replace up to about 30 atomic percent of the amount.
本発明の軟磁性薄膜は２例えばＲＦスパッタ法等の気相
折着法により前記特定組成の非晶質薄膜を得て、この非
晶質薄膜を例えば３５０〜６５０℃で熱処理し前記非晶
質薄膜の一部ないし全部を結晶化させて製造することが
できる。好ましくは、前記熱処理時に磁界を印加して一
軸磁気異方性を誘導し前記非晶質薄膜の一部ないし全部
を結晶化させて製造することができる。好ましい結晶粒
径は３００Å以下である。The soft magnetic thin film of the present invention is obtained by obtaining an amorphous thin film having the specific composition by, for example, a vapor phase deposition method such as RF sputtering, and then heat-treating this amorphous thin film at, for example, 350 to 650°C to form the amorphous film. It can be manufactured by crystallizing part or all of the thin film. Preferably, the amorphous thin film may be manufactured by applying a magnetic field during the heat treatment to induce uniaxial magnetic anisotropy and crystallizing part or all of the amorphous thin film. The preferred crystal grain size is 300 Å or less.
本発明の軟磁性薄膜は、Ｐｅ−Ｂ−Ｎ又はＦｅ −Ｂ−
Ｎ−０の非晶質薄膜を気相折着法により形成し、該非晶
質薄膜を熱処理して酸素を１０原子％まで拡散させて製
造することもできる。酸素を１０原子％まで拡散させる
には、酸素を含有する雰囲気に接触させて前記非晶質薄
膜を熱処理したり、あるいは、酸素を含有する膜に前記
非晶質薄膜を積層形成し、適宜条件（例えば酸素を含有
する膜の材料、熱処理の温度１時間等）を設定して熱処
理を行なえば良いが、好ましい熱処理温度は３５０〜６
５０℃程度である。The soft magnetic thin film of the present invention is Pe-B-N or Fe-B-
It can also be produced by forming an N-0 amorphous thin film by vapor phase deposition and heat-treating the amorphous thin film to diffuse oxygen up to 10 atomic %. In order to diffuse oxygen to 10 atomic %, the amorphous thin film may be heat-treated by contacting with an oxygen-containing atmosphere, or the amorphous thin film may be laminated on a film containing oxygen, and appropriate conditions may be applied. (For example, the material of the film containing oxygen, the heat treatment temperature for 1 hour, etc.) may be set to perform the heat treatment, but the preferable heat treatment temperature is 350-600℃.
The temperature is about 50°C.
本発明の軟磁性薄膜を前記の方法により製造する場合、
形成される基板の種類により製造後の軟磁性薄膜の諸特
性に差が生じる場合があるので。When manufacturing the soft magnetic thin film of the present invention by the method described above,
This is because the characteristics of the soft magnetic thin film after manufacturing may differ depending on the type of substrate on which it is formed.
適宜基板を選択して製造することが好ましい。It is preferable to select and manufacture the substrate appropriately.
（実施例）
非磁性Ｚｎフェライト基板上に８１０２膜を２００大の
厚さで製膜し、該５１０２膜の表面にｐｅ７５．２ Ｚ
ｒｓ、ｇＮ、８２非晶質合金膜を１０００人の厚さで製
膜して積層体を得た。該非晶質合金膜は、φ １００の
Ｐｅｇ。(Example) An 8102 film was formed to a thickness of 200 mm on a non-magnetic Zn ferrite substrate, and a pe75.2 Z film was formed on the surface of the 5102 film.
A laminate was obtained by forming a rs, gN, 82 amorphous alloy film to a thickness of 1000 mm. The amorphous alloy film is a Peg having a diameter of 100 mm.
Ｚｒ１゜ターゲットを用い、６モル％の窒素と残部アル
ゴンガスから成る混合ガス雰囲気中で投入電力４００Ｗ
の条件でＲｆスパッタリングにより形成した。前記積層
体を１０ＴｏｒｒＮ ２ガス雰囲気（微量の酸素が存在
する）において５５０℃で熱処理して１Ｏａｔ％以下の
酸素゛を含むＰｅ−Ｚｒ−Ｎ−０軟磁性薄膜を形成した
。Using a Zr1° target, input power was 400 W in a mixed gas atmosphere consisting of 6 mol% nitrogen and the balance argon gas.
It was formed by Rf sputtering under the following conditions. The laminate was heat-treated at 550° C. in a 10 Torr N 2 gas atmosphere (with a trace amount of oxygen) to form a Pe-Zr-N-0 soft magnetic thin film containing 1 Oat% or less of oxygen.
（参考例）
Ｓ１０□膜を形成しないこと以外は前記実施例と同様に
して、およそ４０ａｔ％を越える酸素を含むｒｅ −Ｚ
ｒ −Ｎ −０薄膜を得たが、軟磁性は示さなかった。(Reference example) re-Z containing more than about 40 at% oxygen was prepared in the same manner as in the above example except that the S10□ film was not formed.
Although an r-N-0 thin film was obtained, it did not exhibit soft magnetism.
オージェデプスプロファイル
前記実施例の積層体のオージェデプスプロファイルを第
１図に示す。また、前記参考例の積層体のオージェデプ
スプロファイルを第２図に示す。Auger Depth Profile The Auger depth profile of the laminate of the above example is shown in FIG. Further, FIG. 2 shows the Auger depth profile of the laminate of the reference example.
第１図及び第２図の（ａ）は熱処理前（ａｓ ｄｅｐｏ
）のものであり、第１図及び第２図の（ｂ）は３５０℃
Ｘ１時間の熱処理後のものであり、第１図及び第２図の
（ｅ）は５５０℃×１時間の熱処理後のものである。Figures 1 and 2 (a) are before heat treatment (as depo
), and (b) in Figures 1 and 2 is 350℃.
This is after heat treatment for X1 hours, and (e) in FIGS. 1 and 2 is after heat treatment at 550° C. for 1 hour.
第１図によれｉｆ、 ５５０’ＣＸ１時間の熱処理に
より得られたＦｅ −Ｚｒ −Ｎ −０軟磁性薄膜中に
は１０ａｔ％以下の酸素が存在するということがゎがる
。この酸素は、熱処理時の雰囲気中に存在していたもの
であると考えられる。According to FIG. 1, if, 10 at % or less of oxygen is present in the Fe-Zr-N-0 soft magnetic thin film obtained by heat treatment at 550'CX for 1 hour. It is thought that this oxygen was present in the atmosphere during the heat treatment.
第２図によれば、５５０℃×１時間の熱処理により得ら
れたＦｅ −Ｚｒ −Ｎ −０薄膜中にはおよそ４０ａ
ｔ％を越える酸素が存在するということがゎがる。この
酸素は、主として前記フェライト基板中に存在していた
ものであると考えられる。前記本発明の実施例において
８１０２膜を形成した理由は。According to FIG. 2, approximately 40a is present in the Fe-Zr-N-0 thin film obtained by heat treatment at 550°C for 1 hour.
It is interesting that more than t% of oxygen exists. It is thought that this oxygen was mainly present in the ferrite substrate. The reason why the 8102 film was formed in the embodiment of the present invention is as follows.
前記フェライト基板からの酸素の過剰な拡散を防止する
ためである。This is to prevent excessive diffusion of oxygen from the ferrite substrate.
本発明の軟磁性薄膜は、センダスト合金やアモルファス
軟磁性合金よりもはるかに高い飽和磁束密度を有し、か
つ、磁歪を零とすることができ。The soft magnetic thin film of the present invention has a much higher saturation magnetic flux density than Sendust alloy or amorphous soft magnetic alloy, and can have zero magnetostriction.
低保磁力、高透磁率の優れた軟磁気特性を得ることがで
きる。Excellent soft magnetic properties such as low coercive force and high magnetic permeability can be obtained.
また、電気抵抗率もセンダスト並に高く磁界中熱処理に
よって一軸異方性を持たせることができ、その大きさも
組成や熱処理時間によって制御することができるので、
目的に応じた高周波透磁率を得ることができる。さらに
８５０℃までの熱処理によっても特性が劣化しないこと
から、ガラスボンディングなどに対する耐熱性にも優れ
ており、あわせて高い硬度と耐食性を持つことから。In addition, its electrical resistivity is as high as that of Sendust, and it can be given uniaxial anisotropy by heat treatment in a magnetic field, and its magnitude can be controlled by the composition and heat treatment time.
High-frequency magnetic permeability can be obtained depending on the purpose. Furthermore, since its properties do not deteriorate even after heat treatment up to 850°C, it has excellent heat resistance for glass bonding, etc., and also has high hardness and corrosion resistance.
耐摩耗性も高く、信頼性の高い材料となっている。It has high wear resistance and is a highly reliable material.
本発明の軟磁性薄膜は、製膜時には非晶質合金として形
成し熱処理によって後から微結晶化させることかできる
ので、膜形成にあたってステップカバレッジが良好でか
つ鏡面が得られ易く多層膜化などの手段に依らなくても
結晶粒の粗大化を防ぐことができるので、厚膜化するこ
とが可能である。The soft magnetic thin film of the present invention can be formed as an amorphous alloy at the time of film formation, and then microcrystalized by heat treatment. Therefore, it is easy to obtain good step coverage and a mirror surface during film formation, and is suitable for multilayer film formation. Since coarsening of crystal grains can be prevented without depending on any means, it is possible to increase the thickness of the film.
従って１本発明の軟磁性薄膜を例えば磁気ヘッドのコア
材料として用いることによって、高保磁力の磁気記録媒
体に対応することができ、高品質化、高帯域化、高記録
密度化を図ることができる。Therefore, by using the soft magnetic thin film of the present invention, for example, as a core material of a magnetic head, it is possible to correspond to a magnetic recording medium with a high coercive force, and it is possible to achieve higher quality, higher bandwidth, and higher recording density. .
第１図及び第２図は、夫々、オージェデプスプロファイ
ルを示す図である。
出願人 富士写真フィルム株式会社代理人 弁
理士 加 藤 朝 道第！図
第２図FIG. 1 and FIG. 2 are diagrams showing Auger depth profiles, respectively. Applicant Fuji Photo Film Co., Ltd. Agent Patent Attorney Asa Kato Michidai! Figure 2
Claims (1)
々原子％を示し，ＢはＺｒ，Ｈｆ，Ｔｉ，Ｎｂ，Ｔａ，
Ｖ，Ｍｏ，Ｗの少なくとも１種以上を表わす。）なる組
成式で示され，その組成範囲は ０＜ｂ≦２０ ０＜ｃ≦２２ ０＜ｄ≦１０ の範囲であることを特徴とする軟磁性薄膜。[Claims] Fe_aB_bNcO_d (where a, b, c, and d each represent atomic %, and B represents Zr, Hf, Ti, Nb, Ta,
Represents at least one of V, Mo, and W. ), and the composition range is 0<b≦20, 0<c≦22, 0<d≦10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20030990A JPH0484403A (en) | 1990-07-27 | 1990-07-27 | Soft magnetic thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20030990A JPH0484403A (en) | 1990-07-27 | 1990-07-27 | Soft magnetic thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0484403A true JPH0484403A (en) | 1992-03-17 |
Family
ID=16422175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20030990A Pending JPH0484403A (en) | 1990-07-27 | 1990-07-27 | Soft magnetic thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0484403A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05298617A (en) * | 1991-06-13 | 1993-11-12 | Alps Electric Co Ltd | Thin film magnetic head |
| JPH06240416A (en) * | 1993-01-14 | 1994-08-30 | Internatl Business Mach Corp <Ibm> | Alloy based on fe high in magnetic permeability |
| JPH0797665A (en) * | 1992-04-15 | 1995-04-11 | Nec Corp | Soft magnetic material, production thereof and magnetic head |
| US5587223A (en) * | 1992-10-19 | 1996-12-24 | Board Of Trustees Leland Stanford, Jr. University | High density magnetic information storage medium |
| US5617275A (en) * | 1994-05-02 | 1997-04-01 | Sanyo Electric Co., Ltd. | Thin film head having a core comprising Fe-N-O in a specific atomic composition ratio |
| JP2006041527A (en) * | 2004-07-27 | 2006-02-09 | St Microelectronics Sa | High magnetization and insulating soft magnetic thin film, method of forming thin film, and integrated circuit |
-
1990
- 1990-07-27 JP JP20030990A patent/JPH0484403A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05298617A (en) * | 1991-06-13 | 1993-11-12 | Alps Electric Co Ltd | Thin film magnetic head |
| JPH0797665A (en) * | 1992-04-15 | 1995-04-11 | Nec Corp | Soft magnetic material, production thereof and magnetic head |
| US5587223A (en) * | 1992-10-19 | 1996-12-24 | Board Of Trustees Leland Stanford, Jr. University | High density magnetic information storage medium |
| JPH06240416A (en) * | 1993-01-14 | 1994-08-30 | Internatl Business Mach Corp <Ibm> | Alloy based on fe high in magnetic permeability |
| US5617275A (en) * | 1994-05-02 | 1997-04-01 | Sanyo Electric Co., Ltd. | Thin film head having a core comprising Fe-N-O in a specific atomic composition ratio |
| JP2006041527A (en) * | 2004-07-27 | 2006-02-09 | St Microelectronics Sa | High magnetization and insulating soft magnetic thin film, method of forming thin film, and integrated circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0382195A1 (en) | Magnetic head and method of manufacturing the same | |
| JP2963003B2 (en) | Soft magnetic alloy thin film and method of manufacturing the same | |
| JPH0484403A (en) | Soft magnetic thin film | |
| JPH0320444A (en) | Soft magnetic alloy film | |
| JPH0744108B2 (en) | Soft magnetic thin film | |
| JPH03263306A (en) | Magnetic film and magnetic head | |
| JP2508479B2 (en) | Soft magnetic ferrite thin film | |
| JP2866911B2 (en) | Magnetic head | |
| JP2584687B2 (en) | Method for manufacturing soft magnetic thin film | |
| JP3127075B2 (en) | Soft magnetic alloy film, magnetic head, and method of adjusting thermal expansion coefficient of soft magnetic alloy film | |
| JPH02263416A (en) | Manufacture of soft magnetic alloy film | |
| JP2657710B2 (en) | Method for manufacturing soft magnetic thin film | |
| JP2784105B2 (en) | Soft magnetic thin film | |
| JP2523854B2 (en) | Magnetic head | |
| JPH0416517A (en) | Soft magnetic thin film | |
| JP2979557B2 (en) | Soft magnetic film | |
| JP2707213B2 (en) | Iron-based soft magnetic thin film alloy for magnetic head and method of manufacturing the same | |
| JPH031513A (en) | Manufacture of soft magnetic thin film | |
| JPH0489606A (en) | Production of soft magnetic thin film | |
| JP2808547B2 (en) | Composite magnetic head | |
| JPH02262307A (en) | Soft magnetic thin film | |
| JP2761267B2 (en) | Soft magnetic alloy film | |
| JP2003017354A (en) | Method of manufacturing soft magnetic film | |
| JPH053121A (en) | Magnetic member | |
| JPH0645146A (en) | Manufacture of soft magnetic film |