JPH0482197B2 - - Google Patents

Info

Publication number
JPH0482197B2
JPH0482197B2 JP9408287A JP9408287A JPH0482197B2 JP H0482197 B2 JPH0482197 B2 JP H0482197B2 JP 9408287 A JP9408287 A JP 9408287A JP 9408287 A JP9408287 A JP 9408287A JP H0482197 B2 JPH0482197 B2 JP H0482197B2
Authority
JP
Japan
Prior art keywords
semiconductor laser
layer
array device
waveguide
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP9408287A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63258091A (ja
Inventor
Akihiro Matsumoto
Mototaka Tanetani
Kaneki Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP9408287A priority Critical patent/JPS63258091A/ja
Publication of JPS63258091A publication Critical patent/JPS63258091A/ja
Publication of JPH0482197B2 publication Critical patent/JPH0482197B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP9408287A 1987-04-15 1987-04-15 半導体レ−ザアレイ装置 Granted JPS63258091A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9408287A JPS63258091A (ja) 1987-04-15 1987-04-15 半導体レ−ザアレイ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9408287A JPS63258091A (ja) 1987-04-15 1987-04-15 半導体レ−ザアレイ装置

Publications (2)

Publication Number Publication Date
JPS63258091A JPS63258091A (ja) 1988-10-25
JPH0482197B2 true JPH0482197B2 (enrdf_load_html_response) 1992-12-25

Family

ID=14100555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9408287A Granted JPS63258091A (ja) 1987-04-15 1987-04-15 半導体レ−ザアレイ装置

Country Status (1)

Country Link
JP (1) JPS63258091A (enrdf_load_html_response)

Also Published As

Publication number Publication date
JPS63258091A (ja) 1988-10-25

Similar Documents

Publication Publication Date Title
CA1325670C (en) Combination index/gain guided semiconductor lasers
EP0337688B1 (en) Phase-locked array of semiconductor lasers using closely spaced antiguides
JPS649752B2 (enrdf_load_html_response)
US4792962A (en) A ring-shaped resonator type semiconductor laser device
JPS5940592A (ja) 半導体レ−ザ素子
JP2004253811A (ja) 半導体発光素子およびその製造方法
JP4634081B2 (ja) 半導体レーザ素子及び半導体レーザ素子アレイ
JP2723045B2 (ja) フレア構造半導体レーザ
JPH0431195B2 (enrdf_load_html_response)
JPH01164077A (ja) 発光ダイオードおよびその製造方法
WO2006030778A1 (ja) 半導体レーザ素子及び半導体レーザ素子アレイ
JPH03268379A (ja) 半導体レーザ・チップおよびその製造方法
US5727016A (en) Spatially coherent diode laser with lenslike media and feedback from straight-toothed gratings
JPH055391B2 (enrdf_load_html_response)
US4764936A (en) Semiconductor laser array device
JPH0482197B2 (enrdf_load_html_response)
US6707835B2 (en) Process for producing semiconductor laser element including S-ARROW structure formed by etching through mask having pair of parallel openings
JP2613975B2 (ja) 周期利得型半導体レーザ素子
JPH0671121B2 (ja) 半導体レーザ装置
JPS63150981A (ja) 半導体レ−ザ装置
JPH055389B2 (enrdf_load_html_response)
JPH0614575B2 (ja) 半導体レーザ素子
JP2565924B2 (ja) 半導体レーザ装置
JPS6393187A (ja) 分布帰還型半導体レ−ザ
JPH0337876B2 (enrdf_load_html_response)

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees