JPH0482016A - Production of magnetic recording medium - Google Patents
Production of magnetic recording mediumInfo
- Publication number
- JPH0482016A JPH0482016A JP19506190A JP19506190A JPH0482016A JP H0482016 A JPH0482016 A JP H0482016A JP 19506190 A JP19506190 A JP 19506190A JP 19506190 A JP19506190 A JP 19506190A JP H0482016 A JPH0482016 A JP H0482016A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic
- gaseous
- recording medium
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000004544 sputter deposition Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 5
- 229910001882 dioxygen Inorganic materials 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 3
- 229910052760 oxygen Inorganic materials 0.000 abstract 3
- 239000001301 oxygen Substances 0.000 abstract 3
- 239000008246 gaseous mixture Substances 0.000 abstract 2
- 239000010408 film Substances 0.000 description 28
- 239000010409 thin film Substances 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
Landscapes
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は磁気記録媒体の製造方法に関し、さらに詳しく
は、ハード磁気ディスク用の長手磁気記録媒体の製造方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a magnetic recording medium, and more particularly to a method of manufacturing a longitudinal magnetic recording medium for a hard magnetic disk.
[従来の技術]
ハード磁気ディスク用の高記録密度媒体として、塗布媒
体に代わってスパッタ法による薄膜媒体が現在主流とな
ってきている。高記録密度を実現するため、この薄膜媒
体は高出力、高記録密度特性等が要求されている。これ
らの特性を向上させるには、その媒体の磁気特性として
保磁力(HC)、角形比(S)、ざらには保磁力角形比
(S )が大きい必要がある。[Prior Art] As a high recording density medium for hard magnetic disks, thin film media produced by sputtering have now become mainstream instead of coated media. In order to achieve high recording density, this thin film medium is required to have high output and high recording density characteristics. In order to improve these characteristics, the magnetic properties of the medium need to be large, such as coercive force (HC), squareness ratio (S), and more specifically coercive force squareness ratio (S 2 ).
そこで、上記特性を得るため、基板としてディスク円周
方向にテクスチャ溝をつけたN i P/八へ基板など
を使用し、純A「ガスを用いてスパッタ法により基板上
に下地膜としてCr膜、磁性膜としてC0NiCr膜ま
たはCoCrTa膜を形成し、媒体を作製する方法が提
案されている(電子情報通信学会技術研究報告、CPM
8B−91およびCPM8B−92,1988年)。Therefore, in order to obtain the above characteristics, a NiP/8 substrate with textured grooves in the circumferential direction of the disk was used as a substrate, and a Cr film was deposited as an underlayer film on the substrate by sputtering using pure A gas. , a method has been proposed to fabricate a medium by forming a CONiCr film or a CoCrTa film as a magnetic film (IEICE technical research report, CPM
8B-91 and CPM8B-92, 1988).
[発明が解決しようとする課題]
上記の従来のスパッタ法による薄膜媒体作製技術におい
ても媒体の保磁力、角形比および保磁力角形比は良好な
レベルにあるが、更に超高記録密度の実現のためにそれ
らを改善する必要がある。[Problems to be Solved by the Invention] Although the coercive force, squareness ratio, and coercive force squareness ratio of the medium are at good levels even in the above-mentioned conventional thin film medium manufacturing technology using the sputtering method, it is still difficult to realize ultra-high recording density. We need to improve them.
本発明の目的は、更に超高記録密度実現のため、特に保
磁力を改善した磁気記録媒体の製造方法を提供すること
にある。Another object of the present invention is to provide a method for manufacturing a magnetic recording medium with particularly improved coercive force in order to realize ultra-high recording density.
[ll1題を解決するための手段]
本発明は、基板上にスパッタ法によりCrの下地膜とC
oCrTaまたはCoN i Cr(7)磁性膜を順次
形成する磁気記録媒体の製造方法において、下地膜はA
rガスと酸素ガスからなる混合ガスを雰囲気として形成
し、磁性膜はArガスを雰囲気として形成することを特
徴とする磁気記録媒体の製造方法である。[Means for Solving Problem 11] The present invention provides a method for forming a base film of Cr on a substrate using a sputtering method.
In a method for manufacturing a magnetic recording medium in which oCrTa or CoN i Cr(7) magnetic films are sequentially formed, the base film is A.
This method of manufacturing a magnetic recording medium is characterized in that a mixed gas consisting of r gas and oxygen gas is formed as an atmosphere, and a magnetic film is formed as an atmosphere of Ar gas.
[作用]
本発明では、基板上にスパッタ法によりCrの下地膜と
CoCrTaまたはCON i Crの磁性膜が形成さ
れた磁気記録媒体を作製する際に、下地膜はArガスと
酸素ガスからなる混合ガスを雰囲気として形成し、磁性
膜はArガスを雰囲気として形成することにより磁気特
性を改善できる。[Function] In the present invention, when producing a magnetic recording medium in which a Cr base film and a CoCrTa or CON i Cr magnetic film are formed on a substrate by sputtering, the base film is a mixture of Ar gas and oxygen gas. The magnetic properties can be improved by forming the magnetic film using Ar gas as the atmosphere.
即ち、本発明の製造方法によれば、下地膜成膜時に従来
のArガス以外の酸素ガスが存在することにより下地膜
の膜質および膜構造か変化し、このことが次に成膜する
磁性膜の膜質、膜構造にも影響を与え、その結果、磁気
特性が改善される。That is, according to the manufacturing method of the present invention, the presence of oxygen gas other than the conventional Ar gas during the formation of the underlayer changes the film quality and structure of the underlayer, and this causes a change in the magnetic film to be deposited next. It also affects the film quality and structure of the film, and as a result, the magnetic properties are improved.
[実施例] 以下に、本発明の実施例について説明する。[Example] Examples of the present invention will be described below.
実施例1
本実施例では、磁性膜がCoCrTa膜の場合について
説明する。本実施例に用いたスパッタ装置はRFマグネ
トロン方式のものである。ターゲットは下地膜用として
3Nの純度を有するCrタゲット、磁性膜用としてCo
CrTa (12at%Cr:、2at%Ta)合金タ
ーゲットをそれぞれ用いた。また、基板は平滑な(Rm
ax−20人〉ガラス基板を用いた。Example 1 In this example, a case where the magnetic film is a CoCrTa film will be described. The sputtering apparatus used in this example is of the RF magnetron type. The target is a Cr target with a purity of 3N for the base film, and a Co target for the magnetic film.
CrTa (12 at% Cr:, 2 at% Ta) alloy targets were used. In addition, the substrate is smooth (Rm
ax-20 people> A glass substrate was used.
まず、本発明の実施例1によるスパッタ条件を第1表に
示す。また、比較のために、従来と同様にCr下地膜成
膜時にも純Arガスで作製した媒体を比較例1とする。First, Table 1 shows sputtering conditions according to Example 1 of the present invention. For comparison, Comparative Example 1 is a medium in which pure Ar gas was used during the formation of the Cr underlayer film as in the prior art.
これら2種類について、その磁気特性を試料振動型磁化
測定器(VSM)により測定した。その結果を第2表に
示す。これから、本発明の媒体は従来より、磁気特性で
、特に保磁力が改善されていることがわかる。The magnetic properties of these two types were measured using a vibrating sample magnetometer (VSM). The results are shown in Table 2. From this, it can be seen that the medium of the present invention has improved magnetic properties, particularly coercive force, compared to the conventional media.
第1表
第2表
実施例2
次に、磁性膜がCoN i Cr膜の場合について説明
する。ここで磁性膜としてCON i Cr(20at
%N i 、10at%cr>合金ターゲットを用いた
以外、下地膜のターゲットおよび基板は実施例1と同様
である。また、スパッタ条件も第3表に示したように、
CoNiCr以外、実施例1と同様である。また、比較
のために、従来と同様にQr下地膜の成膜時にも純Ar
ガスを用いて作製した媒体を比較例2とする。Table 1 Table 2 Example 2 Next, a case where the magnetic film is a CoN i Cr film will be described. Here, CON i Cr (20at
%N i , 10at%cr>The base film target and substrate were the same as in Example 1 except that an alloy target was used. In addition, the sputtering conditions are as shown in Table 3.
It is the same as Example 1 except for CoNiCr. For comparison, pure Ar was also used when forming the Qr base film as in the conventional case.
Comparative Example 2 is a medium prepared using gas.
これら2種類についてVSMによる磁気特性の測定結果
を第4表に示す。これから、本実施例の媒体も実施例1
と同様に、従来より磁気特性で特に保磁力が改善されて
いることかわかる。Table 4 shows the measurement results of the magnetic properties of these two types by VSM. From now on, the medium of this example will also be used as Example 1.
Similarly, it can be seen that the magnetic properties, especially the coercive force, have been improved compared to the conventional one.
(基板、Cr”lの逆スパッタ有り) 第3表 (基板。(Substrate, Cr"l reverse sputtering) Table 3 (substrate.
Cr膜の逆スパッタ有り)
第4表
[発明の効果]
以上説明したように、本発明の製造方法により作製した
磁気記録媒体は、Cr下地膜成膜時にArガスと酸素ガ
スとの混合ガスを用いることにより、従来より磁気特性
で特に保磁力が改善され、従来に比べて再生出力、記録
密度等が更に改善された。(With reverse sputtering of Cr film) Table 4 [Effects of the invention] As explained above, the magnetic recording medium manufactured by the manufacturing method of the present invention is produced by using a mixed gas of Ar gas and oxygen gas during the formation of the Cr underlayer film. By using this material, the magnetic properties, especially the coercive force, were improved compared to the conventional method, and the reproduction output, recording density, etc. were further improved compared to the conventional method.
Claims (1)
rTaまたはCoNiCrの磁性膜を順次形成する磁気
記録媒体の製造方法において、下地膜はArガスと酸素
ガスからなる混合ガスを雰囲気として形成し、磁性膜は
Arガスを雰囲気として形成することを特徴とする磁気
記録媒体の製造方法。(1) Cr base film and CoC on the substrate by sputtering method
A method for manufacturing a magnetic recording medium in which magnetic films of rTa or CoNiCr are sequentially formed, characterized in that the base film is formed in an atmosphere of a mixed gas of Ar gas and oxygen gas, and the magnetic film is formed in an atmosphere of Ar gas. A method for manufacturing a magnetic recording medium.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19506190A JPH0482016A (en) | 1990-07-25 | 1990-07-25 | Production of magnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19506190A JPH0482016A (en) | 1990-07-25 | 1990-07-25 | Production of magnetic recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0482016A true JPH0482016A (en) | 1992-03-16 |
Family
ID=16334909
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19506190A Pending JPH0482016A (en) | 1990-07-25 | 1990-07-25 | Production of magnetic recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0482016A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0260388A (en) * | 1988-08-26 | 1990-02-28 | Matsushita Electric Ind Co Ltd | Still picture transmission equipment |
JPH0536054A (en) * | 1991-07-31 | 1993-02-12 | Nec Corp | Magnetic recording medium and production thereof |
GB2285269A (en) * | 1993-12-20 | 1995-07-05 | Leybold Materials Gmbh | Target for magnetron cathode sputtering system conisting of a cobalt-base alloy |
US5590047A (en) * | 1993-08-05 | 1996-12-31 | Clarion Co., Ltd. | Information processing apparatus |
-
1990
- 1990-07-25 JP JP19506190A patent/JPH0482016A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0260388A (en) * | 1988-08-26 | 1990-02-28 | Matsushita Electric Ind Co Ltd | Still picture transmission equipment |
JPH0536054A (en) * | 1991-07-31 | 1993-02-12 | Nec Corp | Magnetic recording medium and production thereof |
US5590047A (en) * | 1993-08-05 | 1996-12-31 | Clarion Co., Ltd. | Information processing apparatus |
GB2285269A (en) * | 1993-12-20 | 1995-07-05 | Leybold Materials Gmbh | Target for magnetron cathode sputtering system conisting of a cobalt-base alloy |
GB2285269B (en) * | 1993-12-20 | 1997-06-11 | Leybold Materials Gmbh | Target for magnetron cathode sputtering system consisting of a cobalt-base alloy |
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