JPH0479968B2 - - Google Patents

Info

Publication number

JPH0479968B2

JPH0479968B2 JP16957988A JP16957988A JPH0479968B2 JP H0479968 B2 JPH0479968 B2 JP H0479968B2 JP 16957988 A JP16957988 A JP 16957988A JP 16957988 A JP16957988 A JP 16957988A JP H0479968 B2 JPH0479968 B2 JP H0479968B2

Authority

JP

Japan

Prior art keywords

nozzle

silicon

molten silicon

solidified

mold

Prior art date

1988-07-07

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 75
• 229910052710 silicon Inorganic materials 0.000 claims description 75
• 239000010703 silicon Substances 0.000 claims description 75
• 238000000034 method Methods 0.000 claims description 23
• 238000004519 manufacturing process Methods 0.000 claims description 20
• 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
• 238000005266 casting Methods 0.000 claims description 16
• 238000002844 melting Methods 0.000 claims description 13
• 230000008018 melting Effects 0.000 claims description 13
• 239000000463 material Substances 0.000 claims description 7
• 238000007711 solidification Methods 0.000 claims description 3
• 230000008023 solidification Effects 0.000 claims description 3
• 238000010521 absorption reaction Methods 0.000 claims description 2
• 238000003825 pressing Methods 0.000 claims description 2
• XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
• 239000013078 crystal Substances 0.000 description 6
• 239000011261 inert gas Substances 0.000 description 5
• 238000002347 injection Methods 0.000 description 5
• 239000007924 injection Substances 0.000 description 5
• OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
• 229910052799 carbon Inorganic materials 0.000 description 4
• 239000000155 melt Substances 0.000 description 4
• 229920001296 polysiloxane Polymers 0.000 description 4
• 239000000758 substrate Substances 0.000 description 4
• 235000012431 wafers Nutrition 0.000 description 4
• 229910052786 argon Inorganic materials 0.000 description 3
• 238000006243 chemical reaction Methods 0.000 description 3
• 239000012535 impurity Substances 0.000 description 3
• 239000011248 coating agent Substances 0.000 description 2
• 238000000576 coating method Methods 0.000 description 2
• 230000000694 effects Effects 0.000 description 2
• 238000005516 engineering process Methods 0.000 description 2
• 239000007789 gas Substances 0.000 description 2
• 239000010453 quartz Substances 0.000 description 2
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
• 229910052581 Si3N4 Inorganic materials 0.000 description 1
• 229910004298 SiO 2 Inorganic materials 0.000 description 1
• 230000015572 biosynthetic process Effects 0.000 description 1
• 238000011109 contamination Methods 0.000 description 1
• 238000000605 extraction Methods 0.000 description 1
• 239000011796 hollow space material Substances 0.000 description 1
• 238000003780 insertion Methods 0.000 description 1
• 230000037431 insertion Effects 0.000 description 1
• 238000009413 insulation Methods 0.000 description 1
• 238000002955 isolation Methods 0.000 description 1
• 239000007788 liquid Substances 0.000 description 1
• 230000005499 meniscus Effects 0.000 description 1
• 239000000203 mixture Substances 0.000 description 1
• 230000000149 penetrating effect Effects 0.000 description 1
• 238000007650 screen-printing Methods 0.000 description 1
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
• 238000009736 wetting Methods 0.000 description 1