JPH0479149B2 - - Google Patents
Info
- Publication number
- JPH0479149B2 JPH0479149B2 JP9525190A JP9525190A JPH0479149B2 JP H0479149 B2 JPH0479149 B2 JP H0479149B2 JP 9525190 A JP9525190 A JP 9525190A JP 9525190 A JP9525190 A JP 9525190A JP H0479149 B2 JPH0479149 B2 JP H0479149B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- semiconductor
- cathode
- semiconductor region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 13
- 230000006698 induction Effects 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims 33
- 239000000758 substrate Substances 0.000 claims 7
- 230000003068 static effect Effects 0.000 claims 1
- 238000005036 potential barrier Methods 0.000 description 19
- 238000009792 diffusion process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010791 quenching Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 1
- -1 WSi 2 or MoSi 2 Chemical compound 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9525190A JPH03292770A (ja) | 1990-04-10 | 1990-04-10 | 静電誘導サイリスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9525190A JPH03292770A (ja) | 1990-04-10 | 1990-04-10 | 静電誘導サイリスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03292770A JPH03292770A (ja) | 1991-12-24 |
| JPH0479149B2 true JPH0479149B2 (US07179912-20070220-C00144.png) | 1992-12-15 |
Family
ID=14132540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9525190A Granted JPH03292770A (ja) | 1990-04-10 | 1990-04-10 | 静電誘導サイリスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03292770A (US07179912-20070220-C00144.png) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2509127B2 (ja) * | 1992-03-04 | 1996-06-19 | 財団法人半導体研究振興会 | 静電誘導デバイス |
| JPH0793425B2 (ja) * | 1992-04-07 | 1995-10-09 | 東洋電機製造株式会社 | プレーナ構造のｍｏｓ制御サイリスタ |
| US5324966A (en) * | 1992-04-07 | 1994-06-28 | Toyo Denki Seizo Kabushiki Kaisha | MOS-controlled thyristor |
| US5426314A (en) * | 1992-07-29 | 1995-06-20 | Zaidan Hojin Handotai Kenkyu Shinkokai | Insulated gate control static induction thyristor |
| JP2678159B2 (ja) * | 1992-11-06 | 1997-11-17 | 尚茂 玉蟲 | 分割ゲート型カソード短絡構造を有する絶縁ゲート静電誘導サイリスタ |
-
1990
- 1990-04-10 JP JP9525190A patent/JPH03292770A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03292770A (ja) | 1991-12-24 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |