JPH0475379A - Semiconductor substrate - Google Patents
Semiconductor substrateInfo
- Publication number
- JPH0475379A JPH0475379A JP18871090A JP18871090A JPH0475379A JP H0475379 A JPH0475379 A JP H0475379A JP 18871090 A JP18871090 A JP 18871090A JP 18871090 A JP18871090 A JP 18871090A JP H0475379 A JPH0475379 A JP H0475379A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- phosphorus
- interface
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 11
- 239000011574 phosphorus Substances 0.000 claims abstract description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000009413 insulation Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 13
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 7
- 229910052681 coesite Inorganic materials 0.000 abstract description 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 6
- 229910052682 stishovite Inorganic materials 0.000 abstract description 6
- 229910052905 tridymite Inorganic materials 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 4
- -1 oxygen ions Chemical class 0.000 abstract description 4
- 229910001415 sodium ion Inorganic materials 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 239000007943 implant Substances 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はＳＯＩ基板の材料構成に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to the material composition of an SOI substrate.
従来（７）ＳＯＩ基板として、Ｓ ＩＭＯＸ （Ｓ ｉ
ｌ１ｃｏｎ ＩＭｐＪａｎｔｅｄ ０Ｘｉｄｅ）
や貼り合わせ法による基板すなわち、シリコン基板上に
５ｉｎ２膜を形成し、該５ＩＯ２膜上に単結晶シリコン
膜を形成したものがあった。Conventional (7) SOI substrates include SIMOX (S i
l1con IMpJanted 0Xide)
In some cases, a 5in2 film is formed on a substrate using a bonding method, that is, a silicon substrate, and a single crystal silicon film is formed on the 5IO2 film.
しかし、上記従来技術によると、シリコン基板上の５ｉ
ｎ２膜にナトリウムが侵入すると、正イオンとなり、単
結晶シリコン膜と下地ＳｉＯ２膜との界面に於て、パッ
ク・チャネルが形成され、単結晶シリコン膜に形成され
たトランジスタのリーク電流の原因となると云う課題が
あった。However, according to the above-mentioned conventional technology, 5i on a silicon substrate
When sodium enters the N2 film, it becomes positive ions, forming a pack channel at the interface between the single crystal silicon film and the underlying SiO2 film, which causes leakage current in transistors formed in the single crystal silicon film. There was an issue to be solved.
本発明は、かかる従来技術の課題を解決し、ＳＯＩ基板
に於て、５ｉｎ２膜中のナトリウム・イオンを安定化す
る構造を提供する事を目的とする。The present invention aims to solve the problems of the prior art and to provide a structure that stabilizes sodium ions in a 5in2 film in an SOI substrate.
上記課題を解決する為に、本発明は、半導体基板に係り
、半導体基板上に形成した絶縁膜上に薄い半導体膜を形
成した、いわゆるＳＯＩ基板に於て、下地半導体基板と
絶縁膜の境界面の絶縁膜側かあるいは少なくとも半導体
基板側に高濃度の燐を含有させる手段を取る。In order to solve the above problems, the present invention relates to a semiconductor substrate, and in a so-called SOI substrate in which a thin semiconductor film is formed on an insulating film formed on a semiconductor substrate, the interface between the base semiconductor substrate and the insulating film is A method is taken to contain a high concentration of phosphorus on the insulating film side or at least on the semiconductor substrate side.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例を示すＳＯ■基板の断面図で
ある。すなわち、Ｓｉ基板１の表面から、まづ酸素イオ
ン打込みにより５ｉｎ２膜３を形成すると共に、該Ｓｉ
Ｏ２膜３の表面にＳｉ膜４を残存させたＳＩＭＯＸウェ
ーハに於て、引き続いて、Ｓｉ基板１と５ｉｎ２膜３の
界面にりんイオンを打込み、りんガラス２の層を形成し
たものである。尚、りんイオン打込みをＳｉ基板１と５
ｉ０２膜３の界面に行なう為に、界面のＳｉ基板側にり
んが高い濃度で打込まれたＮ１層を形成しても良い。FIG. 1 is a sectional view of an SO2 substrate showing an embodiment of the present invention. That is, first, a 5in2 film 3 is formed from the surface of the Si substrate 1 by oxygen ion implantation, and the Si
In the SIMOX wafer in which the Si film 4 remained on the surface of the O2 film 3, phosphorous ions were subsequently implanted into the interface between the Si substrate 1 and the 5in2 film 3 to form a layer of phosphorous glass 2. In addition, phosphorus ion implantation was performed on Si substrates 1 and 5.
In order to perform this at the interface of the i02 film 3, an N1 layer implanted with a high concentration of phosphorus may be formed on the Si substrate side of the interface.
第２図は、本発明の他の実施例を示すＳｏｌ基板の断面
図である。すなわち、Ｓｉ基板１１の表面にＮ＋ポリＳ
ｉ膜１２が形成されて成り、該Ｎ゛ポリＳｉ膜１２上に
ＳｉＯ２膜１３を介してＳｉ膜島４が形成されて成る。FIG. 2 is a sectional view of a Sol substrate showing another embodiment of the present invention. That is, N+ polyS is formed on the surface of the Si substrate 11.
An i film 12 is formed, and a Si film island 4 is formed on the N poly-Si film 12 with an SiO2 film 13 interposed therebetween.
尚、本実施例と前記実施例とに於て、Ｓｉ基板１及び１
１を高濃度にりんを含有させたＮ”Ｓｉ基板であっても
良く、又、本実施例のＮ−ポリＳ１膜１２の表面のみを
Ｎ″層にする手たてを施しても良く、又、５１０２膜１
３の下部にりんガラス層を形成しても良い。Incidentally, in this embodiment and the above embodiment, Si substrates 1 and 1
1 may be an N"Si substrate containing a high concentration of phosphorus, or only the surface of the N-poly S1 film 12 of this embodiment may be made into an N" layer, Also, 5102 membrane 1
A phosphor glass layer may be formed at the bottom of 3.
更に、Ｓｉ基板１や１１及びＮ”ポリＳｉ膜１２迄含め
て、石英等の絶縁基板で形成されていても良い。Furthermore, the Si substrates 1 and 11 and the N'' poly-Si film 12 may be formed of an insulating substrate such as quartz.
更にＳｉ膜４及びＳｌ島１４は多結晶体や準結晶体ある
いはアモルファス体であっても良い。Further, the Si film 4 and the Sl island 14 may be polycrystalline, quasi-crystalline, or amorphous.
本発明によりＳｏｌ基板の絶縁膜中のＮａイオンを安定
化させることができ、ひいてはＳＯＩ基板を用いて製作
したトランジスタのリーク電流を減少することができる
効果がある。According to the present invention, Na ions in the insulating film of the Sol substrate can be stabilized, and the leakage current of transistors manufactured using the SOI substrate can be reduced.
第１図及び第２図は、本発明の実施例を示す、Ｓｏｌ基
板の断面図である。
１．１１・・・Ｓｉ基板
２ ・
１２ ・
３．
４ ・
１４ ・
・りんガラス
・Ｎ１ポリＳｉ膜
・５ｉｎ２膜
・Ｓｉ膜
・Ｓｉ島
以
上
出願人 セイコーエプソン株式会社1 and 2 are cross-sectional views of a Sol substrate showing an embodiment of the present invention. 1.11...Si substrate 2 ・ 12 ・ 3. 4 ・ 14 ・ ・Phosphorus glass・N1 poly-Si film・5in2 film・Si film・Si island and above Applicant Seiko Epson Corporation
Claims (1)
形成した、いわゆるＳＯＩ（Ｓｅｍｉｃｏｎｄｕｃｔｏ
ｒ ｏｎ Ｉｎｓｕｌａｔｏｒ）基板に於て、下地半導
体基板と絶縁膜の境界面の絶縁膜側かあるいは少なくと
も半導体基板側には高濃度に燐が含有されて成る事を特
徴とする半導体基板。SOI (Semiconductor) is a thin semiconductor film formed on an insulation film formed on a semiconductor substrate.
ron Insulator) A semiconductor substrate characterized in that phosphorus is contained in a high concentration on the insulating film side of the interface between the base semiconductor substrate and the insulating film, or at least on the semiconductor substrate side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18871090A JPH0475379A (en) | 1990-07-17 | 1990-07-17 | Semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18871090A JPH0475379A (en) | 1990-07-17 | 1990-07-17 | Semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0475379A true JPH0475379A (en) | 1992-03-10 |
Family
ID=16228443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18871090A Pending JPH0475379A (en) | 1990-07-17 | 1990-07-17 | Semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0475379A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5689136A (en) * | 1993-08-04 | 1997-11-18 | Hitachi, Ltd. | Semiconductor device and fabrication method |
| WO2009066566A1 (en) * | 2007-11-19 | 2009-05-28 | Air Water Inc. | PROCESS FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTAL SiC SUBSTRATE PRODUCED BY THE PROCESS |
-
1990
- 1990-07-17 JP JP18871090A patent/JPH0475379A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5689136A (en) * | 1993-08-04 | 1997-11-18 | Hitachi, Ltd. | Semiconductor device and fabrication method |
| US6051877A (en) * | 1993-08-04 | 2000-04-18 | Hitachi, Ltd. | Semiconductor device and fabrication method |
| US6291877B1 (en) | 1993-08-04 | 2001-09-18 | Hitachi, Ltd. | Flexible IC chip between flexible substrates |
| US6486541B2 (en) | 1993-08-04 | 2002-11-26 | Hitachi, Ltd. | Semiconductor device and fabrication method |
| WO2009066566A1 (en) * | 2007-11-19 | 2009-05-28 | Air Water Inc. | PROCESS FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTAL SiC SUBSTRATE PRODUCED BY THE PROCESS |
| US8603901B2 (en) | 2007-11-19 | 2013-12-10 | Air Water Inc. | Method for producing single crystal SiC substrate and single crystal SiC substrate produced by the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101509267B1 (en) | Methods of fabricating glass-based substrates and apparatus employing same | |
| US20060189096A1 (en) | Creation of high mobility channels in thin-body SOI devices | |
| JPH08116038A (en) | Semiconductor device and its manufacture | |
| KR900003840B1 (en) | Insulation gate field effect transistor manufacturing method | |
| KR20020079498A (en) | Semiconductor member manufacturing method and semiconductor device manufacturing method | |
| US5433168A (en) | Method of producing semiconductor substrate | |
| JPH0475379A (en) | Semiconductor substrate | |
| JPS59136926A (en) | Manufacture of semiconductor device | |
| JPS6336574A (en) | Thin film transistor | |
| JPH0669085B2 (en) | Method for manufacturing semiconductor substrate | |
| JPS58143571A (en) | Thin film semiconductor device | |
| JPS62202559A (en) | Semiconductor device and its manufacture | |
| JPS62296459A (en) | Soi semiconductor device | |
| KR100258096B1 (en) | Manufacturing method of soi substrate | |
| JPH04115572A (en) | Soi substrate and its manufacture | |
| JPS61207076A (en) | Manufacture of semiconductor device | |
| JPH04367278A (en) | Insulating gate thin film transistor and manufacture thereof | |
| JPH04299859A (en) | Manufacture of semiconductor device | |
| JPH0274074A (en) | Semiconductor substrate | |
| JPS61208876A (en) | Thin film transistor | |
| JPH04114476A (en) | Semiconductor device and manufacture thereof | |
| JPH01108764A (en) | Formation of insulating film | |
| JPS58182835A (en) | Treatment of substrate for thin film transistor | |
| JP2000091583A (en) | Semiconductor device | |
| JPH01272146A (en) | Semiconductor device |