JPH0475357A - Arrangement of miniature metallic sphere - Google Patents
Arrangement of miniature metallic sphereInfo
- Publication number
- JPH0475357A JPH0475357A JP2189637A JP18963790A JPH0475357A JP H0475357 A JPH0475357 A JP H0475357A JP 2189637 A JP2189637 A JP 2189637A JP 18963790 A JP18963790 A JP 18963790A JP H0475357 A JPH0475357 A JP H0475357A
- Authority
- JP
- Japan
- Prior art keywords
- bumps
- bump
- substrate
- fine metal
- miniature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 229910001111 Fine metal Inorganic materials 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 25
- 238000010884 ion-beam technique Methods 0.000 abstract description 6
- 230000005611 electricity Effects 0.000 abstract description 5
- 230000003068 static effect Effects 0.000 abstract description 5
- 230000002776 aggregation Effects 0.000 abstract description 3
- 238000005054 agglomeration Methods 0.000 abstract description 2
- 230000003472 neutralizing effect Effects 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 15
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/11334—Manufacturing methods by local deposition of the material of the bump connector in solid form using preformed bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ＩＣチップの電極と外部リードとの接続法の
一種であるＴ Ａ Ｂ （Ｔａｐｅ Ａｕｔｏｍａｔｅ
ｄ Ｂｏｎｄｉ ｎｇ）法において、微細金属球（以下
、バンブとも称する。）を所定の配列パターンに従って
配列する微細金属球の配列方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to TAB (Tape Automate), which is a type of connection method between electrodes of an IC chip and external leads.
The present invention relates to a method for arranging fine metal balls (hereinafter also referred to as bumps) according to a predetermined arrangement pattern in the d Bonding method.
ＴＡＢ法は、ＩＣチップの電極部へのリード配線を、Ｔ
ＡＢテープ上にパターン化されて形成されているリード
の先端部分とＩＣチップの電極部とを、バンブと呼ばれ
る接合用の金属突起を介して接合する方法である。バン
ブは予めＴＡＢテープのリード側か、もしくはｊＣチッ
プの電極側かのいずれかに取り付けて置き、ＴＡＢテー
プとＩＣチップの接合は、ボンディングマシンを使って
加熱・加圧することにより行う。In the TAB method, the lead wiring to the electrode part of an IC chip is
In this method, the tip end portion of a lead patterned and formed on an AB tape and the electrode portion of an IC chip are bonded via a bonding metal protrusion called a bump. The bump is attached in advance to either the lead side of the TAB tape or the electrode side of the jC chip, and the TAB tape and the IC chip are bonded by applying heat and pressure using a bonding machine.
バンブをＩＣチップ側でなくＴＡＢテープのリード側に
形成しておく方法は、バンブ接合中にＩＣチップを傷め
る心配の無いことから、近年広く行われるようになって
きた。ハンプ付きＴＡＢテープの従来の製造方法には、
リードを厚めに作っておき、ハンプになる部分だけを残
して他を工、。The method of forming bumps on the lead side of the TAB tape rather than on the IC chip side has become widely used in recent years because there is no fear of damaging the IC chip during bump bonding. The conventional manufacturing method of TAB tape with hump includes:
Make the reed thicker, leave only the part that will become the hump, and work on the rest.
チング等により薄く削り取る方法や、予めガラス等の基
板上にメツキで作製しておいたバンブを、リード先端部
に転写する方法等がある。但し、これらの方法で作製さ
れたバンブ付きＴＡＢテープは、バンブの形状が矩形に
近いものとなるため、バンブの高さが正確に揃っていな
いと、バンブとＩＣチップの電極との接合にバラツキが
生じやすいという欠点があった。There are methods such as scraping off a thin layer by etching or the like, and methods of transferring a bump prepared in advance by plating onto a substrate such as glass to the lead tip. However, in the bumped TAB tapes produced by these methods, the bumps are nearly rectangular in shape, so if the heights of the bumps are not precisely aligned, there will be variations in the bonding between the bumps and the electrodes of the IC chip. The disadvantage was that it was easy for this to occur.
本発明者等は先に、ＴＡＢテープのリード先端部に球形
状のバンブを形成する新しい方法を、特願千１〜２３４
９１７号として出願した。この方法は、バンプを配列す
べき位置に合わせて貫通穴を設けた基板の裏側を真空に
吸引しておき、貫通穴部分にバンプとなる金属球を吸い
寄せて仮固定した後に、ＴＡＢテープのリードと基板上
に配列・仮固定されている金属球とを重ね合わせて接合
するものである。The present inventors previously proposed a new method for forming spherical bumps at the lead ends of TAB tapes in Japanese Patent Application No. 1,101-234.
The application was filed as No. 917. In this method, vacuum is applied to the back side of the board where through holes are provided in alignment with the positions where the bumps are to be arranged, and after the metal balls that will become the bumps are attracted to the through holes and temporarily fixed, the leads of the TAB tape are The metal balls arranged and temporarily fixed on the substrate are overlapped and bonded together.
球形状のバンプは、これまでの、ガラス基板等の上にメ
ツキで形成された矩形のハンプに比べて変形しやすく、
接合の点では有利なものである。Spherical bumps are easier to deform than conventional rectangular bumps formed by plating on glass substrates, etc.
This is advantageous in terms of bonding.
しかしながら、メツキによってバンプを形成する場合に
は、始めから配列すべき所定の位置を特定して形成する
ことができるのに対して、球形状のバンプはバラバラの
状態で作製されるため、所定の位置に如何にして能率良
く配列するかが大きな問題となる。However, when forming bumps by plating, it is possible to specify and form predetermined positions from the beginning where they should be arranged, whereas spherical bumps are made in pieces, so they can be formed at predetermined positions. The big problem is how to arrange them efficiently.
本発明は上記事情に基づいてなされたものであり、効率
良く、しかも確実に微細金属球を所定の位置に配列する
ことができる微細金属球の配列方法を提供することを目
的とするものである。The present invention has been made based on the above circumstances, and it is an object of the present invention to provide a method for arranging fine metal balls that can efficiently and reliably arrange fine metal balls at predetermined positions. .
上記の目的を達成するための本発明に係る微細金属球の
配列方法は、イオン化された雰囲気中で、基板上に微細
金属球を配列することを特徴とするものである。A method for arranging fine metal spheres according to the present invention for achieving the above object is characterized by arranging fine metal spheres on a substrate in an ionized atmosphere.
本発明は前記の構成によって、イオン化された雰囲気中
で微細金属球を基板上の所定の位置に配列することによ
り、帯電している微細金属球や配列されるときに帯電し
た微細金属球等がイオン化された雰囲気との間で電荷の
授受を行い電気的に中性になるので、静電気により微細
金属球が凝集したり、所定の位置以外の位置に微細金属
球が付着したりするのを防止する。According to the above configuration, the present invention arranges fine metal balls at predetermined positions on a substrate in an ionized atmosphere. It exchanges charge with the ionized atmosphere and becomes electrically neutral, which prevents fine metal spheres from agglomerating due to static electricity or from adhering to positions other than the designated positions. do.
以下に本発明の第１実施例を第１図乃至第３図を参照し
て説明する。第１図は本発明の第１実施例である微細金
属球の配列方法を説明する図、第２図（ａ）はその微細
金属球の配列方法において使用する微細金属球の配列装
置の配列部の概略斜視図、同図（ｂ）はその配列部の概
略断面図、第３図はそのバンプ配列装置を用いたバンプ
転写装置の概略構成図である。本実施例においてはバン
プとして直径８０μｍの球形状のものを使用する。A first embodiment of the present invention will be described below with reference to FIGS. 1 to 3. FIG. 1 is a diagram illustrating a method for arranging fine metal balls according to the first embodiment of the present invention, and FIG. 2(a) is an arrangement section of a device for arranging fine metal balls used in the method for arranging fine metal balls. FIG. 3(b) is a schematic sectional view of the arrangement portion thereof, and FIG. 3 is a schematic configuration diagram of a bump transfer device using the bump arrangement device. In this embodiment, a spherical bump with a diameter of 80 μm is used.
第３図に示すバンプ転写装置は、バンプ２を吸引して所
定の位置に配列するバンプ配列装置４と、ＴＡＢテープ
２２を送り出す機構（不図示）と、ＴＡＢテープ２２の
リード２６の先端部にバンプ２を転写するために加熱・
加圧するポンディングツール６とを有するものである。The bump transfer device shown in FIG. 3 includes a bump arranging device 4 that sucks the bumps 2 and arranges them at predetermined positions, a mechanism (not shown) that sends out the TAB tape 22, and a tip of the lead 26 of the TAB tape 22. Heat and heat to transfer bump 2.
It has a pumping tool 6 that applies pressure.
バンプの配列装置４は、バンプ供給部８と、配列部１０
と、排気部２０と、イオン発生装置としてのイオンガン
（たとえば、シムコジャパン株式会社製、イオクリーン
ガン）３０とを含むものである。配列部１０は、第１図
及び第２図に示すようにバンプ配列用の基板１２と、排
気部２０により内部が減圧される吸引部１４とからなる
。また、配列部１０と排気部２０とは排気管１６を介し
て繋がれている。The bump arranging device 4 includes a bump supply section 8 and an arranging section 10.
, an exhaust section 20, and an ion gun (for example, Io Clean Gun manufactured by Simco Japan Co., Ltd.) 30 as an ion generator. As shown in FIGS. 1 and 2, the array section 10 includes a bump array substrate 12 and a suction section 14 whose interior is depressurized by an exhaust section 20. Furthermore, the array section 10 and the exhaust section 20 are connected via an exhaust pipe 16.
イオンガン３０ば、たとえば図示しないコンプレッサか
らの空気を電離し、発生したイオンをイオンビームとし
て放出するものである。The ion gun 30 ionizes air from, for example, a compressor (not shown) and emits the generated ions as an ion beam.
本実施例の配列部ｌＯにおいては、厚さ３０μｍのニッ
ケル製の基板１２を使用している。基板１２にはバンプ
２を配列すべき全ての位置に直径約６０μｍの貫通穴１
３が設けられている。吸引部１４には貫通穴１３に対応
して開口部１５が設けられている。In the array section IO of this embodiment, a nickel substrate 12 with a thickness of 30 μm is used. Through holes 1 with a diameter of approximately 60 μm are formed in the substrate 12 at all positions where bumps 2 are to be arranged.
3 is provided. The suction portion 14 is provided with an opening 15 corresponding to the through hole 13 .
本装置を用いてバンプを所定パターンに配列しＴＡＢテ
ープに転写するには、先ず排気部２ｏを作動させて排気
管１６を介して、吸引部１４内を減圧状態にする。する
と、貫通穴１３の表側には吸引力が発生する。このとき
、第１図に示すように配列部１０を多数のバンプ２が載
っているバンブ供給部８の近くに寄せて、イオンガン３
ｏによってイオンビームを基板１２やバンブ供給部８の
周辺に照射しながら、バンプ２を貫通穴１３に吸引する
。In order to arrange bumps in a predetermined pattern and transfer them to the TAB tape using this device, first, the exhaust section 2o is operated to bring the inside of the suction section 14 into a reduced pressure state via the exhaust pipe 16. Then, a suction force is generated on the front side of the through hole 13. At this time, as shown in FIG. 1, the ion gun 3
The bumps 2 are sucked into the through holes 13 while irradiating the substrate 12 and the periphery of the bump supply section 8 with an ion beam using the ion beam.
また、例えば配列部１０を基板１２が上側になるように
設置し、その基板１２の周辺の雰囲気をイオンガン３０
によってイオン化しながら、基板１２上にバンプをふり
かけることにより、バンプ２を貫通穴１３に吸引するよ
うにしてもよい。Further, for example, the array unit 10 is installed with the substrate 12 facing upward, and the atmosphere around the substrate 12 is controlled by the ion gun 30.
The bumps 2 may be attracted to the through-holes 13 by sprinkling bumps on the substrate 12 while being ionized.
ところで、ハンプを吸引する際にバンプの周辺にイオン
ビームを照射しない（すなわち、バンプの周辺の気体を
イオン化しない）場合には、摩擦等により帯電したバン
プが互いに凝集し、これらのバンプが一つの貫通穴に集
まったり、基板１２の貫通穴１３以外の位置に付着した
りすることがある。このようなバンプの凝集が生ずると
、バンプをＴＡＢテープのリード先端部に転写する際に
、当然、歩留りが著しく低下する。By the way, if the area around the bump is not irradiated with an ion beam when suctioning the bump (that is, the gas around the bump is not ionized), the charged bumps will aggregate due to friction, etc., and these bumps will become one. They may collect in the through holes or adhere to positions other than the through holes 13 of the substrate 12. If such aggregation of bumps occurs, the yield will naturally drop significantly when the bumps are transferred to the lead tips of the TAB tape.
本実施例の微細金属球の配列方法においては、イオンガ
ン３０によってイオンビームを照射することにより、イ
オン化された雰囲気中で基板１２にバンプ２を吸引する
ので、帯電し凝集していたバンプはイオン化した気体と
の間で電荷の授受を行い電気的に中性になる。また、吸
引中に他のバンプ２との摩擦等により帯電したバンプ２
も中性になる。したがって、各バンブ間には静電気が働
かなくなり、ハンプが凝集しなくなるので、容品に各貫
通穴１３に一つずつノ＼ンプ２を配置することができる
。In the method of arranging fine metal spheres of this embodiment, the bumps 2 are attracted to the substrate 12 in an ionized atmosphere by irradiating the ion beam with the ion gun 30, so that the charged and agglomerated bumps are ionized. It exchanges charge with the gas and becomes electrically neutral. Also, bumps 2 that are charged due to friction with other bumps 2 during suction, etc.
also becomes neutral. Therefore, static electricity does not work between the bumps, and the humps do not aggregate, so one bump 2 can be placed in each through hole 13 of the container.
バンプ２を吸引して配列した後は、ノ＼ンプ配列装Ｗ４
の基板１２はボンディング受は部の役割を果たすことに
なる。先ず、ポリイミド等の絶縁物からなるフィルムキ
ャリア２４上にリード２６が形成されたＴＡＢテープ２
２と基板１２との間の位置を、図示しない位置合わせ調
整機構部を用いて調整する。ハンプ配列装置４の位置が
決まったら、適当な温度に加熱されているボンディング
・ンール６により一定の荷重を作用させることにより、
貫通穴１３に吸引されていたノ＼ツブ２をＴＡＢテープ
の望まれたり一ド２６の先端部に転写・接合する。After sucking and arranging the bumps 2, use the bump arrangement device W4.
The substrate 12 will serve as a bonding receiver. First, a TAB tape 2 with leads 26 formed on a film carrier 24 made of an insulating material such as polyimide is prepared.
The position between the substrate 12 and the substrate 12 is adjusted using a position adjustment mechanism (not shown). Once the position of the hump arrangement device 4 is determined, by applying a constant load to the bonding ring 6 heated to an appropriate temperature,
The knob 2 that has been sucked into the through hole 13 is transferred and bonded to the tip of the desired knob 26 of the TAB tape.
バンプ２を写し取られたバンブ配列装置４は再びバンプ
を配列する工程に戻り、同時にＴＡＢテープ２２が一コ
マ分送られて新たなフレームが転写位置に送られ、上記
と同様にバンプ配列装置４の位置を調整した後、次のバ
ンプ２がＴＡＢテープ２２のリード２６の先端部に転写
・接合される。After copying the bumps 2, the bump arranging device 4 returns to the step of arranging the bumps, and at the same time, the TAB tape 22 is fed by one frame to send a new frame to the transfer position, and the bump arranging device 4 transfers the bump 2 in the same manner as above. After adjusting the position, the next bump 2 is transferred and bonded to the tip of the lead 26 of the TAB tape 22.
このように、本実施例の微細金属球の配列方法において
は、静電気除去対策を施すことにより、バンプを所定の
配列位置に確実に一つずつ配列することができるので、
バンプをＴＡＢテープのリード先端部に転写する際の歩
留りを著しく向上させることができる。In this way, in the method of arranging fine metal balls of this embodiment, by taking measures to remove static electricity, bumps can be reliably arranged one by one at predetermined arrangement positions.
The yield when transferring bumps to the lead tips of TAB tapes can be significantly improved.
次に、本発明の第２実施例を第４図及び第５図を用いて
説明する。第４図は本発明の第２実施例である微細金属
球の配列方法を説明する図、第５図（ａ）はその微細金
属球の配列方法において使用するバンプ配列装置の基板
の概略斜視図、同図（ｂ）はその基板の概略断面図であ
る。尚、使用するバンプの大きさは第１実施例における
ものと同一である。Next, a second embodiment of the present invention will be described using FIGS. 4 and 5. FIG. 4 is a diagram illustrating a method for arranging fine metal balls according to a second embodiment of the present invention, and FIG. 5(a) is a schematic perspective view of a substrate of a bump arranging device used in the method for arranging fine metal balls. , FIG. 2B is a schematic cross-sectional view of the substrate. Note that the size of the bumps used is the same as in the first embodiment.
第４図に示すバンプ配列装置は、バンブ供給部８０と、
基板１２０と、イオン発生装置としてのイオンブロワ（
シムコジャパン株式会社製、Ａ３００型）３００とを有
する。基板１２０には配列パターンに対応する位置にバ
ンプ２より少し大きい直径１００μｍの穴１３０が設け
られている。The bump arrangement device shown in FIG. 4 includes a bump supply section 80,
A substrate 120 and an ion blower (
manufactured by Simco Japan Co., Ltd., A300 type) 300. A hole 130 with a diameter of 100 μm, which is slightly larger than the bump 2, is provided in the substrate 120 at a position corresponding to the array pattern.
穴１３０の深さは６０μｍである。イオンブロワ３００
はイオン化した気体を緩やかに吹き出す装置である。The depth of hole 130 is 60 μm. ion blower 300
is a device that gently blows out ionized gas.
上記のバンプ配列装置を用いてバンプを所定パターンに
配列するには、先ず基板１２０を傾斜させて、基板１２
０の上部からバンプ供給部８０のバンプ２を基板１２０
上に転がす。このとき、基板１２０上を転がり落ちるバ
ンプ２の周辺にイオンブロワ３００でイオン化した気体
を吹きつけながら、バンプ２を穴１３０に落として、バ
ンプを所定位置に配置する。In order to arrange bumps in a predetermined pattern using the above-mentioned bump arranging device, first, the substrate 120 is tilted.
0 from the top of the bump supply section 80 to the substrate 120.
Roll it up. At this time, while blowing ionized gas using the ion blower 300 around the bump 2 that rolls down on the substrate 120, the bump 2 is dropped into the hole 130 and placed in a predetermined position.
本実施例の微細金属球の配列方法においても、イオン化
した気体を基板１２０やバンプ２に吹きつけることによ
り、基板１２０の周辺をイオン化した雰囲気で包み、帯
電しているバンプをイオン化した気体により電気的に中
性化する。また、基板上を転がる際に基板や他のバンプ
との摩擦によりバンプが帯電した場合もバンプの中性化
を回ることができる。したがって、ハンプ間には静電気
が働かなくなるので、容易に各人１３０に−っずつバン
プを配列することができる。Also in the method of arranging fine metal balls of this embodiment, by blowing ionized gas onto the substrate 120 and the bumps 2, the periphery of the substrate 120 is surrounded by an ionized atmosphere, and the charged bumps are electrically charged by the ionized gas. Neutralize. Furthermore, even if the bumps become electrically charged due to friction with the substrate or other bumps while rolling on the substrate, the bumps can be neutralized. Therefore, since static electricity does not work between the bumps, bumps can be easily arranged for each person 130.
バンプ２を所定の位置に配置した後は、基板１２０をボ
ンディング受は部として第１実施例と同様に使用するこ
とによりハンプをＴＡＢテープのリード先端部に転写・
接合することができる。その他の作用・効果は第１の実
施例と同様である。After placing the bump 2 in a predetermined position, the board 120 is used as a bonding support in the same manner as in the first embodiment to transfer and transfer the bump to the lead tip of the TAB tape.
Can be joined. Other functions and effects are similar to those of the first embodiment.
尚、上記の第１実施例では、イオン発生装置としてイオ
ンガンを使用した場合について説明したが、本発明はこ
れに限定されるものではなく、第２実施例において使用
したイオンブロワを使用してもよい。上記の第２実施例
においても、同様である。In addition, in the above-mentioned first embodiment, a case was explained in which an ion gun was used as the ion generator, but the present invention is not limited to this, and even if the ion blower used in the second embodiment is used. good. The same applies to the second embodiment described above.
以上説明したように本発明によれば、帯電している微細
金属球や配列するときに帯電した微細金属球等を電気的
に中性にすることにより、微細金属球の凝集を防止し、
微細金属球を一つずつ確実に所定の位置に配列すること
が可能になり、したかって微細金属球をＴＡＢテープの
リード部に転写する際の歩留りを著しく向上させること
ができる微細金属球の配列方法を提供することができる
。As explained above, according to the present invention, the agglomeration of the fine metal spheres is prevented by electrically neutralizing the charged fine metal spheres and the charged fine metal spheres when arranging them.
An arrangement of fine metal spheres that makes it possible to reliably arrange fine metal spheres one by one in a predetermined position, thereby significantly improving the yield when transferring fine metal spheres to the lead part of a TAB tape. method can be provided.
第１図は本発明の第１実施例である微細金属球の配列方
法を説明する図、第２図（ａ）はその微細金属球の配列
方法において使用するハンプ配列装置の配列部の概略斜
視図、同図（ｂ）はその配列部の概略断面図、第３図は
そのバンプ配列装置を用いたバンプ転写装置の概略構成
図、第４図は本発明の第２実施例である微細金属球の゛
配列方法を説明する図、第５図（ａ）はその微細金属球
の配列方法において使用するバンプ配列装置の基板の概
略斜視図、同図（ｂ）はその基板の概略断面図である。
２・・・バンプ、４・・・バンプ配列装置、６・・・ボ
ンディングツール、
８．８０・・・バンプ供給部、
１０・・・配列部、１２．１２０・・・基板、１３．１
３０・・・穴、
１４ ・・・
１６ ・・
２２・・・
２４・・・
３０ ・・・
吸引部、１５・・・開口部、
排気管、２０・・・排気部、
ＴＡＢテープ、
フィルムキャリア、２６・・・リード、イオンガン、３
００・・・イオンブロワ。
第１図FIG. 1 is a diagram illustrating a method for arranging fine metal balls according to a first embodiment of the present invention, and FIG. 2(a) is a schematic perspective view of the arrangement section of a hump arranging device used in the method for arranging fine metal balls. Figure 3(b) is a schematic cross-sectional view of the arrangement section, Figure 3 is a schematic configuration diagram of a bump transfer device using the bump array device, and Figure 4 is a fine metal plate according to a second embodiment of the present invention. FIG. 5(a) is a schematic perspective view of a substrate of a bump arranging device used in the method of arranging fine metal spheres, and FIG. 5(b) is a schematic cross-sectional view of the substrate. be. 2... Bump, 4... Bump arraying device, 6... Bonding tool, 8.80... Bump supply section, 10... Arranging section, 12.120... Substrate, 13.1
30... Hole, 14... 16... 22... 24... 30... Suction part, 15... Opening part, exhaust pipe, 20... Exhaust part, TAB tape, film carrier , 26... lead, ion gun, 3
00...Ion blower. Figure 1
Claims (1)
列することを特徴とする微細金属球の配列方法。A method for arranging fine metal spheres, which comprises arranging fine metal spheres on a substrate in an ionized atmosphere.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18963790A JPH0719798B2 (en) | 1990-07-18 | 1990-07-18 | Arrangement method of fine metal balls |
| EP91302037A EP0447170B1 (en) | 1990-03-14 | 1991-03-12 | Method of bonding bumps to leads of tab tape and an apparatus for arranging bumps used for the same |
| DE69132891T DE69132891T2 (en) | 1990-03-14 | 1991-03-12 | Method for connecting bumps on TAB carrier conductors and an apparatus for arranging bumps |
| MYPI91000398A MY106135A (en) | 1990-03-14 | 1991-03-12 | Method of bonding bumps to leads of tab tape and an apparatus for arranging bumps used for the same. |
| US07/669,189 US5114878A (en) | 1989-09-11 | 1991-03-13 | Method of bonding bumps to leads of tab tape and an apparatus for arranging bumps used for the same |
| KR1019910004083A KR940004247B1 (en) | 1990-03-14 | 1991-03-14 | Bump arranging equipment and method for connecting bump to lead of tab tape |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18963790A JPH0719798B2 (en) | 1990-07-18 | 1990-07-18 | Arrangement method of fine metal balls |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0475357A true JPH0475357A (en) | 1992-03-10 |
| JPH0719798B2 JPH0719798B2 (en) | 1995-03-06 |
Family
ID=16244637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18963790A Expired - Lifetime JPH0719798B2 (en) | 1989-09-11 | 1990-07-18 | Arrangement method of fine metal balls |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0719798B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0710692A (en) * | 1993-03-25 | 1995-01-13 | Wacker Chemitronic Ges Elektron Grundstoffe Mbh | Method and apparatus for decreasing mixing of oxygen in silicon single crystal |
| US5976965A (en) * | 1997-06-18 | 1999-11-02 | Nec Corporation | Method for arranging minute metallic balls |
| US6107181A (en) * | 1997-09-08 | 2000-08-22 | Fujitsu Limited | Method of forming bumps and template used for forming bumps |
-
1990
- 1990-07-18 JP JP18963790A patent/JPH0719798B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0710692A (en) * | 1993-03-25 | 1995-01-13 | Wacker Chemitronic Ges Elektron Grundstoffe Mbh | Method and apparatus for decreasing mixing of oxygen in silicon single crystal |
| US5976965A (en) * | 1997-06-18 | 1999-11-02 | Nec Corporation | Method for arranging minute metallic balls |
| US6107181A (en) * | 1997-09-08 | 2000-08-22 | Fujitsu Limited | Method of forming bumps and template used for forming bumps |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0719798B2 (en) | 1995-03-06 |
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