JP2001068510A - Manufacturing apparatus for semiconductor device and manufacture of the semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To implement mounting even to warped substrates under a determined bonding condition by providing a manufacturing apparatus with a means for positioning a semiconductor chip to a substrate, means for fixing onto a stage, a bonding tool for bonding to the substrate through electrodes, a support head, and a means for sucking and fixing to the stage. SOLUTION: A bonding unit 10 has a conveyor 12 in the rear of its table section 11, and a semiconductor chip supply mechanism 20 in the front side of the conveyor 12. A pickup tool 30 and a bonding mechanism 40 are provided respectively to the right of and behind the mechanism 20. A control section 100 is provided, which is linked with a coating mechanism 70 located upstream of a bonding stage 60 ahead of the conveyor 12. Then, the conveyor 12 intermittently transfers substrates W held by their carriers C in a Q direction indicated by the arrow. The mechanism 20 rotatably supports a supply table 21, where a support member 23 is mounted on a movable body 22 that moves in the X and Y directions. The tool 30 has a drive section 31, while a rotational position determining support section 43 has a head 50.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for manufacturing a semiconductor device, in which a semiconductor chip such as an IC is bonded to a surface of a substrate in a face-down (electrode downward) direction via bumps (protruding electrodes). The present invention relates to a device manufacturing method.

[0002]

2. Description of the Related Art In recent years, in the case of manufacturing a semiconductor device by mounting an electronic component, for example, a semiconductor chip on a substrate, a flip chip system in which the surface of the semiconductor chip on which electrodes are formed is opposed to the substrate is mounted. It is increasingly being adopted.

FIG. 4 is a diagram showing a main part of a bonding apparatus for mounting by such a flip chip method.
The bonding apparatus includes a bonding head 1, a heater tool 2 held by the bonding head 1, a bonding tool 3 held by the heater tool 2 by air suction to hold a semiconductor chip D, and a substrate W held by air suction. And a bonding stage 4 for performing the bonding.

In the bonding apparatus, after supplying the substrate W to the bonding stage 4, the pickup tool picks up and removes the surface Da on which the electrodes of the semiconductor chip D are formed from the component supply section, and then inverts the pickup tool by 180 degrees. Back surface D where no electrode is formed
Set b to the upper side.

Then, the back surface of the semiconductor chip D is sucked by the bonding tool 3 of the bonding head 1, the bonding head 1 is driven in the X and Y directions to be positioned at a predetermined position, and then lowered in the Z direction. The semiconductor chip D is mounted with the surface on which the electrodes are formed facing the substrate W.

After the mounting of the semiconductor chip D on the substrate W is completed, the substrate is removed from the bonding stage, a new substrate W is supplied, and the mounting of the semiconductor chip D is repeatedly performed.

On the other hand, heating and cooling of the bonding tool 3 are repeated in the bonding process. At the time of heating, a method of heating with a heater tool 2 or the like or contacting a heating medium has been adopted, and at the time of cooling, a method of contacting a cooling medium such as water or a natural cooling method has been used.

[0008]

The conventional apparatus and method for manufacturing a semiconductor device as described above have the following problems. (1) When the substrate W is warped or undulated, if the substrate W conveyed to the bonding stage 4 is held only by suction by air suction, the holding force decreases due to air leakage,
During the operation of the bonding stage 4 or during the bonding with the semiconductor chip D, there is a possibility that a positional shift may occur.

In particular, when the substrate W is heated, heat is not sufficiently transmitted because the substrate W and the bonding stage 4 do not adhere to each other. Further, the substrate is partially cooled by the air flowing into the gap, and the substrate temperature is not uniform. For this reason,
When performing bonding at a plurality of locations on the substrate W, there is a problem that the bonding state differs depending on the location.

In flip-chip connection, the parallelism between the substrate W and the semiconductor chip D is important.
Is warped, the parallelism changes within the substrate W or for each substrate W, and the bonding state is not constant.

Furthermore, in the case of a substrate W provided with a large number of through holes such as through holes, there has been a problem that suction holding cannot be performed only by air suction.

(2) As only the method of fixing the bonding tool 3 to the bonding head 1 uses suction by air suction, the air is unexpectedly cut off or the suction force becomes less than the weight of the bonding tool 3. In such a case, the bonding tool 3 may fall and damage the bonding tool 3 itself or other parts of the apparatus.

(3) It is necessary to provide a closed circulation path through which the heating medium and the cooling medium flow, and the structure of the bonding tool 3 becomes complicated, and the manufacturing cost of the bonding tool 3 increases. In addition, a pump or a pipe for flowing a heating medium or a cooling medium is required, which is large.

Further, depending on the bonding process, it is necessary to lower the temperature of the bonding tool 3 at the start of heating to a certain temperature. For this reason, the bonding operation has to wait until the bonding tool 3 in the previous process is naturally cooled. For this reason, it is difficult to shorten the tact time, and it has not been possible to improve the production efficiency.

Therefore, the present invention provides a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of realizing a fixed bonding state and stable mounting even if the substrate has a warp or undulation. It is intended to provide a way.

[0016]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems and achieve the object, an apparatus for manufacturing a semiconductor device according to the present invention is configured as follows.

(1) In a semiconductor device manufacturing apparatus in which a semiconductor chip is mounted on the substrate via the electrodes with the surface on which the electrodes are formed facing the substrate, the semiconductor chips are positioned at predetermined positions on the substrate. Semiconductor chip positioning means, fixing means for mechanically fixing the substrate on a stage, bonding tool for bonding the semiconductor chip to the substrate via the electrodes, and bonding for supporting the bonding tool A head is provided, and suction fixing means for fixing the substrate to the stage by air suction is provided.

(2) In a semiconductor device manufacturing apparatus in which a semiconductor chip is mounted on the substrate via the electrodes with the surface on which the electrodes are formed facing the substrate, the semiconductor chips are positioned at predetermined positions on the substrate. A semiconductor chip positioning means; a bonding tool for bonding the semiconductor chip to the substrate via the electrode; and a bonding head for supporting the bonding tool. It is characterized by comprising mechanical fixing means for temporarily fixing and suction fixing means for sucking and fixing by air suction.

(3) In a semiconductor device manufacturing apparatus in which a semiconductor chip is mounted on the substrate via the electrodes with the surface on which the electrodes are formed facing the substrate, the semiconductor chips are positioned at predetermined positions on the substrate. Semiconductor chip positioning means, a bonding tool for bonding the semiconductor chip to the substrate via the electrodes, the bonding head for supporting the bonding tool via a heat insulating material, and a tool for heating the bonding tool A heating means, a groove-shaped air flow path provided on the heat insulating material and exposed to the bonding tool side and communicating with the outside, and an air supply means for supplying air to the air flow path are provided. It is characterized by.

(4) The apparatus for manufacturing a semiconductor device described in (3) above, wherein a temperature measuring means for measuring the temperature of the bonding tool, and a temperature of the bonding tool measured by the temperature measuring means. And a control unit for instructing a next bonding operation when the temperature is cooled to a preset temperature.

The method of manufacturing a semiconductor device according to the present invention is performed as follows.

(5) In a method of manufacturing a semiconductor device in which a semiconductor chip is mounted on the substrate via the electrode with the surface on which the electrode is formed facing the substrate, the semiconductor chip is positioned at a predetermined position on the substrate. A semiconductor chip positioning step, a heating step of heating a bonding tool,
A bonding step of pressing the semiconductor chip by a heated bonding tool, a cooling step of supplying air to the bonding tool, and cooling, based on the bonding tool being cooled to a predetermined temperature,
And a control step for permitting the start of the next heating step.

[0023]

FIG. 1 is a perspective view showing a bonding apparatus (semiconductor device manufacturing apparatus) 10 according to an embodiment of the present invention, and FIGS.
FIG. 3 is a diagram showing a bonding head 50 incorporated in the bonding apparatus 10, and FIG. Arrows XYZ in these figures
Indicates three directions orthogonal to each other, in particular, XY indicates a horizontal direction,
Z indicates the vertical direction.

The bonding apparatus 10 has a base 11. On the rear side on the platform 11, a conveyor 12 is provided.
A semiconductor chip supply mechanism 20 provided on the front side of the conveyor 12; a pick-up tool 30 disposed on the right side of the semiconductor chip supply mechanism 20; A bonding mechanism 40 disposed on the back side and a bonding stage 60 disposed on the front side of the conveyor 12;
A coating mechanism 70 disposed upstream of the bonding stage 60;
0.

The transport conveyor 12 intermittently transports the substrate W held by the carrier C in the direction of arrow Q in FIG. A stocker (not shown) in which carriers C are stacked and stored at predetermined intervals is arranged at one end of the conveyor 12, and the carriers C are supplied onto the conveyor 12 from this stocker. .

The semiconductor chip supply mechanism 20 includes a supply table 21 and a support member 23 attached to a movable body 22 driven in the X and Y directions. The support member 23 is attached to the support member 23 via a bearing in the θ direction. It is supported rotatably in the (circumferential direction). Then, it is driven in the θ direction by the θ drive source 24. A die ejector (not shown) that pushes up a predetermined semiconductor chip D is disposed below the supply table 21.

The pickup tool 30 includes a driving unit 31
And an arm 32 supported by the drive unit 31. The drive unit 31 includes a rotation drive unit 31a that rotates the arm 32 about its axis, and a lifting unit 31b that moves the rotation drive unit 31a up and down. A head 32a is attached to the tip of the arm 32.
2a is provided with a suction nozzle 32b.

Bonding mechanism (positioning means) 40
Is an XY table 41 and an elevating mechanism 42 which is positioned by the XY table 41 in the directions indicated by arrows XY in FIG.
1, a support portion 43 that is vertically positioned by the elevating mechanism 42, and a bonding head 50 that is rotationally positioned in the direction of the arrow θ in FIG. Therefore, the bonding head 50 is arranged as shown in FIG.
It is designed to be driven in X, Y, Z and θ directions with middle arrows.

As shown in FIG. 2, the bonding head 50 includes a bonding head main body 51, a heat insulating material 52 attached to the lower surface of the bonding main body 51, and a heater tool (tool heating) mounted to the lower surface of the heat insulating material 52. (Means) 53, an abutment 54 attached to the left side of the heater tool 53, and a tool pressing mechanism 55 attached to the right side of the heater tool 53. The bonding head 50 is a bonding tool 56
And has a function of bonding the semiconductor chip D to the substrate W by applying heat and pressure to the substrate W via the bonding tool 56.

The bonding head body 51 is provided with a suction hole 51a and is connected to a suction line 51b. Note that a pressure reducing mechanism 90 is connected to the suction line 51b.

The heat insulating material 52 includes a main body 52a and the main body 5a.
2a, a groove-shaped air flow path 52b provided on the lower surface and an air supply line 52c communicating with the air flow path 52b are provided. Note that an air supply mechanism 80 is connected to the air supply line 52c.

The heater tool 53 has a main body 53a, a suction hole 53b provided on the lower surface of the main body 53a, and a suction line 53c communicating with the suction hole 53b.
Note that the suction line 53c communicates with the above-described suction hole 51a.

The tool pressing mechanism 55 includes a heater tool 53
A spring support 55a attached to the heater tool 53
And a pressing claw 55b, which is disposed between the spring support 55a and the pressing claw 55b so as to swing freely.
A bonding tool 56 to be described later through the
And a tension spring 55c for urging it toward the fourth side.

As the bonding tool 56, a tool suitable for the semiconductor chip D to be bonded is appropriately used. A thermocouple 56 a is embedded in the bonding tool 56, and its output is connected to the control unit 100.

The bonding stage 60 includes a stage body 61 and a lifting mechanism 6 for moving the stage body 61 up and down.
2 and a substrate pressing mechanism 63 provided on the upper surface side of the stage main body 61.

A suction hole 61a is provided on the upper surface of the stage body 61.
A suction line 61b is formed in communication with the suction hole 61a, and a pressure reducing mechanism 9 is provided in the suction line 61b.
0 is connected.

The coating mechanism 70 includes a dispenser 71 and an XY table 72 for positioning the dispenser 71. The dispenser has a function of applying a paste-like substance such as a flux, an anisotropic conductive paste, or a solder paste on the substrate W transported to a predetermined position.

The bonding apparatus 1 configured as described above
At 0, the semiconductor chip D is bonded to the substrate W as follows. That is, the semiconductor chip D is pushed up by the die ejector, and the pickup tool 30 is positioned such that the head 32a is rotated by 180 degrees and the suction nozzle 32b faces the upper surface of the semiconductor chip D on which the electrodes are formed.

Next, the suction nozzle 32b is driven downward until the suction nozzle 32b comes into contact with the upper surface of the semiconductor chip D at a predetermined pressure to suck the semiconductor chip D, and after being driven slightly upward, reversely to the above. Rotated 180 degrees in the direction. As a result, the predetermined semiconductor chip D held by the suction nozzle 32b is separated while being rotated without contacting the adjacent semiconductor chip D, and the semiconductor chip D is turned upside down with no electrodes formed thereon. It will wait in the state where it did.

The semiconductor chip D held in the standby state with the back side up by the pickup tool 30 is received by the bonding tool 56. In the bonding head 50, the pressure reducing mechanism 90 is operated to generate a suction force in the suction hole 53 via the suction line 52e, the suction hole 51a, and the suction line 53c. The semiconductor chip D is sucked.

That is, the bonding tool 56
Driven in the Y direction, the pickup tool 30 is positioned above the suction nozzle 32b that holds the semiconductor chip D by suction. Next, the pickup tool 30 is driven upward in the Z direction to transfer the semiconductor chip D sucked and held by the suction nozzle 32b to the bonding tool 56.

On the other hand, the application of the paste-like substance by the application mechanism 70 to the substrate W conveyed by the conveyor 12 is performed in synchronization with the intermittent conveyance of the substrate W. That is, the predetermined substrate W is transported at a predetermined pitch and the dispenser 71
When the mounting mechanism 40 is positioned at a position facing
Is performed in parallel (simultaneously) with the mounting of the semiconductor chip D on the other substrate W by the bonding tool 56 of FIG.

After the substrate W is placed on the bonding stage 60, the stage body 61 is moved by the elevating mechanism 62.
Is driven upward, and the pressure reducing mechanism 90 generates a suction force in the suction hole 61a via the suction line 61b. As a result, the lower surface of the substrate W is suction-held, and the warp is corrected to be parallel. Further, the substrate W is pressed against the stage main body 61 by the substrate pressing mechanism 63. As a result, the substrate W and the stage main body 61 are parallelized with high accuracy, the gap is eliminated, and no air leakage occurs. Note that the stage main body 61 may be provided with a heating function to heat the substrate W.

When the semiconductor chip D is positioned with respect to the substrate W, the bonding tool 56
, And when the thermocouple 56a detects that it has reached a certain temperature, it is driven in the Z direction. Then, the semiconductor chip D is pressed against the substrate W by the bonding tool 56, and is pressed and mounted.

After the bonding is completed, the air supply mechanism 80 is operated to supply air to the air flow path 52b through the air supply line 52c. Thereby, the heater tool 5
3 and the bonding tool 56 are cooled rapidly. After the thermocouple 56a detects that the temperature has dropped below a predetermined temperature, the process proceeds to the next bonding operation.

As described above, according to the bonding apparatus 10 of the present embodiment, even when the substrate W is warped or undulated, the substrate conveyed to the bonding stage is not only sucked by air suction but also sucked. It is mechanically held by the substrate pressing mechanism 63 and pressed against the bonding stage 60. For this reason, it is possible to prevent a decrease in holding force due to air leakage, and to prevent a displacement between the substrate W and the semiconductor chip D during operation of the bonding stage 60 or during bonding.

When the substrate W is heated, the substrate W and the bonding stage 60 come into close contact with each other, so that heat is sufficiently transmitted. Further, since air is prevented from flowing into the gap between the substrate W and the bonding stage 60, the substrate W is not partially cooled, so that the temperature of the substrate W can be made uniform, and a plurality of Even when bonding is performed at a location, the bonding state does not vary depending on the location.

Further, the substrate W and the semiconductor chip D can be kept parallel to each other with high precision, and the bonding state can be kept constant even if the substrate W is warped. Further, even when the substrate W is provided with a large number of through holes such as through holes, the versatility is enhanced because the substrate W can be held by suction.

On the other hand, as a method of fixing the bonding tool 56 to the bonding head 50, in addition to suction by air suction, since the bonding tool 56 is mechanically held by the tool pressing mechanism 55, air is unexpectedly cut off. Even when the suction force is equal to or less than the weight of the bonding tool 56, the bonding tool 56 can be prevented from dropping, and the possibility of damaging the bonding tool 56 itself and other parts of the apparatus can be eliminated.

Further, since the bonding tool 56 can be heated and cooled with a simple configuration without providing a circulation path of a closed structure through which a heating medium or a cooling medium flows.
The manufacturing cost of the apparatus can be reduced, and the cooling time can be shortened to improve the production efficiency.

It should be noted that the present invention is not limited to the above-described embodiment, and it is needless to say that various modifications can be made without departing from the spirit of the present invention.

[0052]

According to the present invention, even if the substrate has a warp or undulation, a fixed bonding state can be realized and stable mounting can be performed.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a bonding apparatus according to an embodiment of the present invention.

FIGS. 2A and 2B are views showing a bonding head incorporated in the bonding apparatus, wherein FIG. 2A is a side view and FIG.

FIG. 3 is a side view showing a bonding stage incorporated in the bonding apparatus.

FIG. 4 is a side view showing a bonding head and a bonding stage incorporated in a conventional bonding apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Bonding apparatus (semiconductor device manufacturing apparatus) 40 ... Bonding mechanism (positioning means) 50 ... Bonding head 51 ... Bonding head main body 52 ... Heat insulating material 53 ... Heater tool (tool heating means) 55 ... Tool pressing mechanism 56 ... Bonding tool Reference Signs List 60 bonding stage 61 stage main body 62 elevating mechanism 63 substrate holding mechanism

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Takahiro Aizawa 33-Shin-Isoko-cho, Isogo-ku, Yokohama-shi, Kanagawa F-term in Toshiba Production Technology Center Co., Ltd. 5F044 PP15 PP16

Claims (5)

[Claims] An apparatus for manufacturing a semiconductor device in which a semiconductor chip is mounted on the substrate via the electrode with the surface on which the electrode is formed facing the substrate, wherein the semiconductor chip is positioned at a predetermined position on the substrate. Chip positioning means, fixing means for mechanically fixing the substrate on a stage, a bonding tool for bonding the semiconductor chip to the substrate via the electrodes, and a bonding head for supporting the bonding tool The semiconductor device manufacturing apparatus according to claim 1, further comprising: suction fixing means for fixing the substrate to the stage by air suction. 2. An apparatus for manufacturing a semiconductor device wherein a semiconductor chip is mounted on the substrate via the electrode with the surface on which the electrode is formed facing the substrate, wherein the semiconductor chip is positioned at a predetermined position on the substrate. A chip positioning means; a bonding tool for bonding the semiconductor chip to the substrate via the electrode; and a bonding head for supporting the bonding tool. The bonding head mechanically controls the bonding tool. An apparatus for manufacturing a semiconductor device, comprising: mechanical fixing means for fixing to a semiconductor device; and suction fixing means for sucking and fixing by air suction. 3. An apparatus for manufacturing a semiconductor device in which a semiconductor chip is mounted on the substrate via the electrodes with the surface on which the electrodes are formed facing the substrate, wherein the semiconductor chip is positioned at a predetermined position on the substrate. Chip positioning means, a bonding tool for bonding the semiconductor chip to the substrate via the electrode, the bonding head for supporting the bonding tool via a heat insulating material, and a tool heating for heating the bonding tool Means, provided on the heat insulating material, exposed to the bonding tool side, and provided with a groove-shaped air flow path communicating with the outside, and air supply means for supplying air to the air flow path. Characteristic semiconductor device manufacturing equipment. 4. A temperature measuring means for measuring the temperature of the bonding tool, and when the temperature of the bonding tool measured by the temperature measuring means is cooled to a preset temperature, a next bonding operation is instructed. 4. The apparatus for manufacturing a semiconductor device according to claim 3, further comprising control means for performing the operation. 5. A method of manufacturing a semiconductor device in which a semiconductor chip is mounted on the substrate via the electrodes with the surface on which the electrodes are formed facing the substrate, wherein the semiconductor chip is positioned at a predetermined position on the substrate. A chip positioning step; a heating step of heating the bonding tool; a bonding step of pressing the semiconductor chip with the heated bonding tool; a cooling step of supplying air to the bonding tool to cool it; A control step of permitting the start of the next heating step based on cooling to a temperature of the semiconductor device.