JPH047530B2 - - Google Patents

Info

Publication number
JPH047530B2
JPH047530B2 JP58198660A JP19866083A JPH047530B2 JP H047530 B2 JPH047530 B2 JP H047530B2 JP 58198660 A JP58198660 A JP 58198660A JP 19866083 A JP19866083 A JP 19866083A JP H047530 B2 JPH047530 B2 JP H047530B2
Authority
JP
Japan
Prior art keywords
discharge
voltage
anode
circuit
focus electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58198660A
Other languages
Japanese (ja)
Other versions
JPS6091532A (en
Inventor
Wataru Imanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP19866083A priority Critical patent/JPS6091532A/en
Publication of JPS6091532A publication Critical patent/JPS6091532A/en
Publication of JPH047530B2 publication Critical patent/JPH047530B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/44Factory adjustment of completed discharge tubes or lamps to comply with desired tolerances
    • H01J9/445Aging of tubes or lamps, e.g. by "spot knocking"

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)

Description

【発明の詳細な説明】 [発明の技術分野] この発明は、陰極線管におけるネツクガラスの
クラツクの発生を抑制して良好な高電圧特性を得
るための高電圧処理方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a high voltage processing method for suppressing the occurrence of cracks in the neck glass in a cathode ray tube and obtaining good high voltage characteristics.

[従来技術] 一般に、陰極線管の高電圧処理にあたつては、
第1図に示すように、ヒータ1、カソード2、第
1格子3、第2格子4、およびフオーカス電極5
をアース電位とし、陽極6を高圧電源7に接続
し、陰極線管の陽極定格電圧の1.5倍〜3.5倍の電
圧を印加することが行なわれている。
[Prior art] Generally, when performing high voltage processing on cathode ray tubes,
As shown in FIG. 1, a heater 1, a cathode 2, a first grating 3, a second grating 4, and a focus electrode 5
is set at ground potential, the anode 6 is connected to a high voltage power source 7, and a voltage of 1.5 to 3.5 times the rated voltage of the anode of the cathode ray tube is applied.

陽極6に上記のような高電圧を印加すると陽極
6とフオーカス電極5、あるいは陽極6と第1、
第2格子3,4との間で放電が発生して、徐々に
電極表面がクリーニングされていくが、この放電
時のエネルギが大き過ぎた場合、あるいはネツク
ガラス8の内面にチヤージされた電荷と電極との
間で放電が発生した場合、ネツクガラス8の内面
にクラツクが生じることがある。このクラツクは
印加電圧を高くすると、急激に増加するので、あ
る電圧以上には上昇させることができない。
When a high voltage as described above is applied to the anode 6, the anode 6 and the focus electrode 5, or the anode 6 and the first,
A discharge occurs between the second grids 3 and 4, and the electrode surface is gradually cleaned. However, if the energy during this discharge is too large, or if the electric charge is charged on the inner surface of the mesh glass 8 and the electrode If a discharge occurs between the two, cracks may occur on the inner surface of the neck glass 8. This crack increases rapidly when the applied voltage is increased, so the voltage cannot be increased above a certain level.

他方、陰極線管の特性は印加電圧を上昇させる
のにともなつて良くなるが、上記のようなネツク
ガラス8のクラツク発生のため、印加電圧を上昇
させることができず、十分な耐電圧特性をもつた
陰極線管を得ることが困難であつた。
On the other hand, the characteristics of cathode ray tubes improve as the applied voltage increases, but due to the occurrence of cracks in the neck glass 8 as described above, it is not possible to increase the applied voltage, and it is difficult to maintain sufficient voltage resistance characteristics. It was difficult to obtain a cathode ray tube with high quality.

とくに、最近開発された外径が22.5φのネツク
ガラス8をもつた陰極線管では、ネツクガラス8
内面とフオーカス電極5との間隔が狭くなつてい
るので、ネツクガラス8のクラツクが発生しやす
く、問題となつていた。
In particular, recently developed cathode ray tubes with a net glass 8 having an outer diameter of 22.5φ are
Since the distance between the inner surface and the focus electrode 5 is narrow, the neck glass 8 is likely to crack, which has been a problem.

[発明の概要] この発明は上記従来の欠点を解消するためにな
されたもので、フオーカス電極とアース間に放電
回路を挿入することにより、ネツクガラスのクラ
ツクの発生をなくして、良好な耐電圧特性の陰極
線管が得られる高電圧処理方法を提供することを
目的とする。
[Summary of the Invention] This invention was made to eliminate the above-mentioned conventional drawbacks, and by inserting a discharge circuit between the focus electrode and the ground, the generation of cracks in the neck glass is eliminated and good withstand voltage characteristics are achieved. An object of the present invention is to provide a high-voltage processing method that allows a cathode ray tube to be obtained.

[発明の実施例] 以下、この発明の実施例を図面にしたがつて説
明する。
[Embodiments of the Invention] Examples of the invention will be described below with reference to the drawings.

第3図はこの発明に先立つて試みた高電圧処理
方法の一例を示し、フオーカス電極5とアース間
に放電回路9を介在させ、ヒータ1、カソード
2、第1格子3、および第2格子4は従来通りア
ース電位とする。放電回路9は、エアギヤツプを
はさんで対向する1対の尖鋭な放電電極からな
る。
FIG. 3 shows an example of a high voltage processing method attempted prior to the present invention, in which a discharge circuit 9 is interposed between the focus electrode 5 and the ground, and the heater 1, the cathode 2, the first grid 3, and the second grid 4 are is set to earth potential as before. The discharge circuit 9 consists of a pair of sharp discharge electrodes facing each other with an air gap in between.

このような高電圧処理装置において、陽極6に
高圧電源7から高電圧を印加すると、フオーカス
電極5と陽極6との間に高電圧が印加される。こ
のとき、フオーカス電極5の表面に微小な突起が
あると、そこに電界集中が起こり、電界放出が発
生する。フオーカス電極5とアース間には放電回
路9が挿入されているが、その絶縁抵抗は相当に
大きいので、上記の電界放出が微小でも、フオー
カス電極5に印加される電圧は高くなり、ついに
放電回路9はコロナ放電を始める。
In such a high voltage processing apparatus, when a high voltage is applied to the anode 6 from the high voltage power supply 7, the high voltage is applied between the focus electrode 5 and the anode 6. At this time, if there is a minute protrusion on the surface of the focus electrode 5, electric field concentration occurs there and field emission occurs. A discharge circuit 9 is inserted between the focus electrode 5 and the ground, but its insulation resistance is quite high, so even if the field emission described above is minute, the voltage applied to the focus electrode 5 becomes high, and the discharge circuit finally closes. 9 starts corona discharge.

この状態で放電すると、フオーカス電極5と陽
極6との間で管内放電が起こる。管内放電は陰極
線管の高電圧処理の始めの頃は頻度が高く、徐々
に低くなつてゆく。したがつて、始めの頃には、
放電回路9がコロナ放電を起こすと同時に管内放
電が発生し、時間的な差はほとんどないが、頻度
が低くなつてくると、放電回路9のコロナ放電と
管内放電との時間的な差は大きくなる。
When discharging in this state, intraluminal discharge occurs between the focus electrode 5 and the anode 6. The frequency of tube discharge is high at the beginning of high-voltage processing of cathode ray tubes, and gradually decreases. Therefore, at the beginning,
In-tube discharge occurs at the same time as the discharge circuit 9 generates corona discharge, and there is almost no time difference, but as the frequency becomes lower, the time difference between the corona discharge in the discharge circuit 9 and the in-tube discharge becomes large. Become.

コロナ放電は一般的に放電電流がパルス状か、
または常に変動する性質をもつているので、放電
回路9の両端の電圧は高くなつたり、低くなつた
りしている。このため、フオーカス電極5と陽極
6に印加される電圧は、放電回路9のコロナ放電
の大きさによつて、常に変化する電圧が印加さ
れ、管内放電が起こりやすくなる。管内放電が起
きると、この放電電流は陽極6からフオーカス電
極5を通り、放電回路9に流れるので、放電エネ
ルギは小さくなる。したがつて、ネツクガラス8
のクラツクが発生しにくくなる。
Corona discharge generally has a pulsed discharge current, or
Alternatively, since it has a property of constantly changing, the voltage across the discharge circuit 9 becomes higher or lower. Therefore, the voltage applied to the focus electrode 5 and the anode 6 is a voltage that constantly changes depending on the magnitude of corona discharge in the discharge circuit 9, and intraluminal discharge is likely to occur. When an intraluminal discharge occurs, this discharge current flows from the anode 6 through the focus electrode 5 to the discharge circuit 9, so that the discharge energy becomes small. Therefore, Netsuku Glass 8
Cracks are less likely to occur.

多くの陰極線管を用いた実験において、フオー
カス電極5とアーム間に放電回路9を挿入する
と、フオーカス電極5を直接アースした場合に比
較して、ネツクガラス8のクラツクの発生する陽
極印加電圧は、放電回路9の放電開始電圧の50〜
80%分だけ高くなる。たとえば、放電回路9の放
電開始電圧が10KVとすると、第3図の回路で
は、従来の回路に比較して陽極印加電圧を5〜
8KVに高くすることができ、この電圧を印加し
たときに始めてネツクガラス8のクラツクの発生
割合が高くしない前と同じとなる。
In experiments using many cathode ray tubes, when a discharge circuit 9 is inserted between the focus electrode 5 and the arm, the anode applied voltage that causes a crack in the neck glass 8 is lower than when the focus electrode 5 is directly grounded. 50~ of the discharge starting voltage of circuit 9
It will be 80% more expensive. For example, if the discharge starting voltage of the discharge circuit 9 is 10KV, then in the circuit of FIG.
It is possible to increase the voltage to 8KV, and only when this voltage is applied will the rate of occurrence of cracks in the neck glass 8 be the same as before.

他方、陰極線管の耐電圧特性は、放電圧路9を
挿入したことにより、ほとんど差がないので、従
来回路の陽極電圧を5〜8KV高くして電圧処理
したときに得られる特性が、第3図の回路を用い
ることにより得られた。
On the other hand, there is almost no difference in the withstand voltage characteristics of the cathode ray tube due to the insertion of the discharge voltage path 9, so the characteristics obtained when voltage processing is performed by increasing the anode voltage of the conventional circuit by 5 to 8 KV are This was obtained by using the circuit shown in the figure.

なお、放電回路9の放電電極は、先端が平坦
で、コロナ放電の起きにくいものは、ネツクガラ
ス8にクラツクを発生させずに、陽極電圧を上昇
させることができるが、陰極線管の耐電圧特性は
あまり改善されないので、このような放電電極で
は効果がみられない。即ち、先端の比較的尖つた
電極を有する放電電極が望ましい。
Note that if the discharge electrode of the discharge circuit 9 has a flat tip and is less likely to cause corona discharge, it is possible to increase the anode voltage without causing a crack in the net glass 8, but the withstand voltage characteristics of the cathode ray tube are Since the improvement is not so great, no effect can be seen with such a discharge electrode. That is, a discharge electrode having a relatively sharp tip is desirable.

また、第2図のようにフオーカス電極5とアー
ス間に抵抗10を挿入したり、フオーカス電極5
をアースから浮かせた高電圧処理回路において
は、ソケツトピン間で放電が起きて、この発明と
同じ現象が起きることがあるが、ソケツトピン間
の絶縁耐圧はバラツキが大きく、しかも最近のソ
ケツトはフオーカス電極5のピンがサイロ方式で
絶縁耐圧が20KVを越えているので、目的の特性
を得ることが困難である。なお、放電回路9の放
電開始電圧は7〜15KVが適当である。
Also, as shown in Fig. 2, a resistor 10 may be inserted between the focus electrode 5 and the ground, or the focus electrode 5 may be
In a high-voltage processing circuit where the socket is floated from the ground, discharge may occur between the socket pins, causing the same phenomenon as in this invention, but the dielectric strength between the socket pins varies widely, and moreover, recent sockets have a focus electrode of 5. Since the pins are silo type and the dielectric strength exceeds 20KV, it is difficult to obtain the desired characteristics. Note that the appropriate discharge starting voltage of the discharge circuit 9 is 7 to 15 KV.

第4図は放電回路9に代えて、固体バリスタ、
たとえば松下電子工業株式会社製のZNR素子で
電流容量が1000〜2000Aのものを用いたこの発明
の一実施例である。この固体バリスタ10を用い
ると、固体バリスタ10の放電開始電圧の70〜
100%の電圧分を陽極電圧に上乗せして高電圧処
理しても、ネツクガラス8のクラツクが従来の第
1図の回路で処理した場合と同じ程度で、しかも
陰極線管の耐電圧特性は、第1図の回路で固体バ
リスタ10の放電開始電圧の70〜100%の電圧を
陽極電圧に上乗せした場合と同じ程度の特性が得
られた。
In FIG. 4, a solid varistor is used instead of the discharge circuit 9.
For example, in this embodiment, a ZNR element manufactured by Matsushita Electronics Co., Ltd. with a current capacity of 1000 to 2000 A is used. When this solid varistor 10 is used, the discharge starting voltage of the solid varistor 10 is 70~
Even when processed at a high voltage by adding 100% of the voltage to the anode voltage, the cracks in the Nekku Glass 8 are the same as when processed using the conventional circuit shown in Figure 1, and the withstand voltage characteristics of the cathode ray tube are In the circuit shown in FIG. 1, characteristics comparable to those obtained when a voltage of 70 to 100% of the discharge starting voltage of the solid-state varistor 10 is added to the anode voltage were obtained.

このように固体バリスタを用いると、エアギヤ
ツプを用いた場合よりも良好な特性が得られる理
由は必らずしも明らかではないが、たとえば上記
ZNR素子の場合、放電を起こしても、常に素子
の端子電圧は数KV以下には低下しないため、陰
極線管の放電エネルギがある限界値に制限され、
そのためにネツクガラス8のクラツクの発生が少
なくなつたと考えることもできる。
It is not necessarily clear why using a solid varistor in this way provides better characteristics than using an air gap, but for example,
In the case of a ZNR element, even if a discharge occurs, the terminal voltage of the element does not always drop below several KV, so the discharge energy of the cathode ray tube is limited to a certain limit value.
It can be considered that this reduces the occurrence of cracks in the neck glass 8.

[発明の効果] 以上のように、この発明によれば、フオーカス
電極とアース間に固体バリスタを介在させたの
で、放電エネルギが小さくなり、これによつてネ
ツクガラスのクラツクの発生を抑制できる効果が
ある。
[Effects of the Invention] As described above, according to the present invention, since the solid varistor is interposed between the focus electrode and the ground, the discharge energy is reduced, which has the effect of suppressing the occurrence of cracks in the glass. be.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の陰極線管の高電圧処理方法の一
例を示す回路図、第2図は従来の他の高電圧処理
方法の一例を示す回路図、第3図はこの発明に先
立つて試みられた高電圧処理方法の一実施例によ
る回路図、第4図はこの発明の一実施例を示す回
路図である。 1……ヒータ、2……カソード、3……第1格
子、4……第2格子、5……フオーカス電極、6
……陽極、7……高圧電源、10……固体バリス
タ。なお、図中同一符号は同一または相当部分を
示す。
Fig. 1 is a circuit diagram showing an example of a conventional high voltage processing method for cathode ray tubes, Fig. 2 is a circuit diagram showing an example of another conventional high voltage processing method, and Fig. 3 is a circuit diagram showing an example of another conventional high voltage processing method. FIG. 4 is a circuit diagram showing an embodiment of the high voltage processing method according to the present invention. DESCRIPTION OF SYMBOLS 1... Heater, 2... Cathode, 3... First grating, 4... Second grating, 5... Focus electrode, 6
...Anode, 7...High voltage power supply, 10...Solid varistor. Note that the same reference numerals in the figures indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】[Claims] 1 ヒータ、カソード、および格子電極をアース
電位とするとともに、フオーカス電極とアース間
に固体バリスタを介在させ、陽極に高電圧を印加
するように構成したことを特徴とする陰極線管の
高電圧処理方法。
1. A high voltage processing method for a cathode ray tube, characterized in that the heater, cathode, and grid electrode are set to ground potential, a solid varistor is interposed between the focus electrode and the ground, and a high voltage is applied to the anode. .
JP19866083A 1983-10-24 1983-10-24 High voltage processing circuit of cathode-ray tube Granted JPS6091532A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19866083A JPS6091532A (en) 1983-10-24 1983-10-24 High voltage processing circuit of cathode-ray tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19866083A JPS6091532A (en) 1983-10-24 1983-10-24 High voltage processing circuit of cathode-ray tube

Publications (2)

Publication Number Publication Date
JPS6091532A JPS6091532A (en) 1985-05-22
JPH047530B2 true JPH047530B2 (en) 1992-02-12

Family

ID=16394920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19866083A Granted JPS6091532A (en) 1983-10-24 1983-10-24 High voltage processing circuit of cathode-ray tube

Country Status (1)

Country Link
JP (1) JPS6091532A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08536U (en) * 1991-05-27 1996-03-26 克 ▲よ▼平名 A golf brush that can be used on the ground

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780635A (en) * 1980-11-07 1982-05-20 Toshiba Corp High voltage processing method for cathode-ray tube
JPS58142734A (en) * 1982-02-18 1983-08-24 Toshiba Corp Spot knocking process of cathode-ray tube
JPS58218730A (en) * 1982-06-11 1983-12-20 Nec Corp Manufacture of picture tube

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780635A (en) * 1980-11-07 1982-05-20 Toshiba Corp High voltage processing method for cathode-ray tube
JPS58142734A (en) * 1982-02-18 1983-08-24 Toshiba Corp Spot knocking process of cathode-ray tube
JPS58218730A (en) * 1982-06-11 1983-12-20 Nec Corp Manufacture of picture tube

Also Published As

Publication number Publication date
JPS6091532A (en) 1985-05-22

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