JPH04719A - Method and apparatus for cleaning treatment - Google Patents

Abstract

PURPOSE:To increase the cleaning-treatment number of objects to be treated by executing the following: a first cleaning treatment by which the objects to be treated are immersed in a mixed solution of hydrogen peroxide and pure water; and a second cleaning treatment by which the objects to be treated are immersed in a mixed solution of hydrogen peroxide and ammonium hydroxide. CONSTITUTION:A wafer 2 is conveyed to a cleaning tank 4b by using a conveyance arm 6; it is immersed in a mixed solution of H2O2 and pure water which has been introduced into the cleaning tank 4b as a chemical liquid. In the cleaning tank 4b, organic substances 13 which have adhered to the wafer 2 are oxidized by H2O2 in the chemical liquid. Then, the wafer 2 is conveyed to a cleaning tank 4c by using the conveyance arm 6; it is immersed in a mixed solution of H2O2, NH4OH and pure water which has been introduced into the cleaning tank 4c as a chemical liquid. In the cleaning tank 4c, the organic substances 13 which have been oxidized at the first cleaning treatment are removed by H2O2 and NH4OH inside the cleaning tank 4c. Consequently, when the treatment temperature inside the cleaning tank 4c is set to be high, the removal speed of the organic substances 13 is increased and the removal treatment time of the organic substances 13 inside the cleaning tank 4c can be shortened.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to cleaning processing technology, and is particularly applicable to cleaning processing technology for semiconductor wafers (hereinafter simply referred to as wafers) performed in the manufacturing process of semiconductor integrated circuit devices. It is about effective techniques.

[Conventional technology]

Regarding wafer cleaning processing technology, for example, Science Forum Co., Ltd., published July 25, 1984, "Latest Semiconductor Factory Automation System/Comprehensive Technology Collection", P62~
There is a description on page 65.

As described in the above-mentioned literature, conventional cleaning treatment methods include, for example, a batch type cleaning treatment method and a single wafer type cleaning treatment method. The batch cleaning method is a method in which, for example, 50 wafers are cleaned at once. In the batch cleaning method, multiple wafers are cleaned at a time, so there is no problem with the number of wafers being cleaned, but as the diameter of the wafer 1 becomes larger, for example Problems such as easy re-adhesion of Ueno, and reduced reliability of uniformly cleaning the main surface of the Ueno are likely to occur.

On the other hand, the single-wafer cleaning method is a method in which the wafer 1 is cleaned one by one. Therefore, in the case of a single wafer type cleaning treatment method, even if the diameter of the wafer 1 becomes large, the problems in the batch type cleaning treatment method described above can be avoided, and cleaning treatment with a high degree of cleanliness can be performed. However, the single-wafer cleaning method has the problem of how to increase the number of wafers to be cleaned.

By the way, as a typical example of cleaning treatment, a wafer before heat treatment etc. is treated with hydrogen peroxide (H202) and ammonium hydroxide (
There is a cleaning process in which organic matter such as resist attached to the wafer is removed by immersing the wafer in a mixed solution of NH, OH) and pure water. Conventionally, in order to remove organic substances attached to wafers using a single-wafer cleaning method, each wafer is placed in a mixed solution of H, 02, NH, OH, and pure water set at about 80°C. A method is adopted in which the material is soaked in water and washed for about 5 minutes.

[Problem to be solved by the invention]

By the way, as mentioned above, the single wafer cleaning method has
There is a problem in how to increase the number of wafers to be cleaned. In order to increase the number of wafers to be cleaned in a single wafer type cleaning treatment method, it is conceivable to shorten the cleaning treatment time by, for example, increasing the treatment temperature to speed up the chemical reaction rate of the chemical solution. However, in cleaning processes to remove organic matter adhering to wafers, H2O is used as a chemical solution.
When the processing temperature is increased in a cleaning process using a mixed solution of 3O2, N H40H, and pure water, H2O in the chemical solution increases.
The decomposition rate of , becomes faster due to alkaline components such as NH and OH in the chemical solution, and the amount of H3O2 in the chemical solution that contributes to the removal of organic matter is insufficient, resulting in a decrease in the ability to remove organic matter.

In addition, from the viewpoint of preventing such a decrease in cleaning ability, it is necessary to increase the amount of H202 supplied for each cleaning process, or increase the amount of H202 supplied during the cleaning process.
It is possible to replenish O2, but in this case,
There is a problem in that it is very difficult to control the supply amount and replenishment amount t of H3O2 in order to obtain reproducibility of the cleaning process.

The present invention has been made in view of the above-mentioned problems, and its purpose is to remove organic substances attached to objects to be treated using a single-wafer cleaning method without reducing the cleaning ability. It is an object of the present invention to provide a technology that can increase the number of cleaning processing items.

Another object of the present invention is to remove organic substances attached to objects to be treated using a single-wafer cleaning method without complicating the controllability of the supply amount or replenishment amount of the chemical solution.
The objective is to provide technology that can stabilize cleaning ability.

The above and other objects and novel features of the present invention will become apparent from the description of the specification and the accompanying drawings.

[Means to solve the problem]

A brief overview of typical inventions disclosed in this application is as follows.

That is, the first invention is a cleaning treatment method in which an object to be treated is cleaned one by one, and when removing organic matter adhering to the object to be treated, the object to be treated is washed with H202 and pure water. A first cleaning treatment of immersing the object in a mixed solution and immersing the object in H2
A second cleaning treatment in which the object to be treated is immersed in a mixed solution of 8202, NH4OH, and pure water, and a third cleaning treatment in which the object to be treated is immersed in a mixed solution of 8202 and pure water are sequentially performed. be.

[Effect]

According to the above invention, for example, H20z and NH○H
Prior to the second cleaning process in which the object to be treated is immersed in a mixed solution of
By immersing the object to be treated in a mixed solution of Oa and pure water and performing the first cleaning treatment to oxidize the organic substances attached to the object, the treatment temperature can be set higher than before for the second cleaning treatment. For example, the decomposition rate of H20□ in a mixed solution of H2O2, NH, OH, and pure water increases and its amount decreases, but there is a During the first cleaning process, the H202 attached to the object to be treated is effectively replenished, so even if the treatment temperature is set higher than before, organic substances that are easily oxidized and removed by the first cleaning process can be successfully removed. can do.

In addition, in the first and third cleaning treatments, N is added to the chemical solution.
Since it does not contain alkaline components such as H40H, the amount of H3O2 in the chemical solution will not be insufficient even if the treatment temperature is set high, and there is no need to supply or replenish H2O2. In the second cleaning process, the H202 that adhered to the workpiece during the first cleaning process is effectively replenished near the surface of the workpiece, so even if the process temperature is set high, HxOz can be supplied. Only a small quantity and supply amount is required. As a result, the controllability of the supply amount and replenishment amount of HzOz does not become complicated during the first to third cleaning treatments.

〔Example〕

FIG. 1 is a perspective view of the main parts of a cleaning processing apparatus which is an embodiment of the present invention, FIGS. 2(a) and 2(b) are perspective views showing a loader of the cleaning processing apparatus, FIG. (b) is a front view of the workpiece and cassette, illustrating the transport process when transporting the workpiece from the loader to the cleaning processing section; FIG. 4 is a front view showing the transport arm of the cleaning processing apparatus; 51! I is a side view of the transfer arm shown in FIG. 4, and FIGS. 6(a) to (
6) is a side view of the transport arm and the workpiece to explain the holding and transport operations of the workpiece by the transport arm, FIG. 7 is a sectional view of the main part showing the cleaning tank of the cleaning processing apparatus, and FIGS. FIGS. 9(a) and 9(b) are explanatory diagrams schematically illustrating the cleaning method of this embodiment.

The cleaning processing apparatus of this embodiment is shown in FIGS. 1 to 9(a) below.
, (b).

The cleaning processing section f1 of this embodiment shown in FIG. .6 and
It also has an unloader (not shown).

The loader 3 is a mechanism for loading, for example, 25 wafers 2 housed in a cassette 7 to a predetermined position.A rotary table 3a is provided on the top of the loader 3, and a rotary table 3a is provided on the top of the loader 3, and a wafer 2 for two sets is loaded.
It has a structure that allows one operation to be performed continuously. That is, the loader 3, for example, as shown in FIGS. 2(a) and (bl),
When the cassette 7 on the wafer transfer side A becomes empty, the rotary table 3a is rotated 180 degrees in a horizontal plane to automatically place the cassette 7 on the wafer supply side B on the wafer transfer side A. ing.

Further, the loader 3 uses a wafer alignment mechanism (not shown) provided on the wafer supply side B to align all the wafers 2 in the cassette 7 placed on the wafer supply side so that their respective orientation flats are aligned. It has a structure that aligns them.

A bushing 8 (see FIG. 1) made of, for example, fluororesin is provided on the wafer transfer side A of the loader 3. Further, above the cassette 7 on the wafer transfer side A, a guide 9 made of, for example, fluororesin is provided. Butsusha 8
For example, FIG. 3(a).

As shown in (b), the structure is such that all the wafers 2 in the cassette 7 can be lifted up along the guide 9 at once.

The wafers 2 held by the pusher 8 and the guide 9 are transported one by one to the cleaning processing section 4 by the transport arm 5 (see FIG. 1).

In order to prevent chipping of the wafer 2, the transfer arm 5 is made of, for example, fluororesin, and as shown in FIGS. 4 and 5, includes an arm @55a that can move vertically and an arm a
It has a guide portion 5b that guides the vertical movement of 5a. The arm portion 5a has one end fixed to the support portion 5C, and has a structure in which the wafer 2 can be chucked by a claw portion 5d provided at the other end. Further, the guide portion 5b includes a holding portion 5e for holding the wafer 2.

5e is provided. As shown in FIG. 6, when holding the wafer 2, the transfer arm 5 moves the entire transfer arm 5 to a position where the arm portion 5a of the transfer arm 5 approaches the wafer 2 (see FIG. 6(a)). ), raise only the arm portion 5a (see Fig. 6), and hold the wafer 2 so that it is sandwiched between the claw portion 5d at the tip of the arm portion 5a and the holding portions 5e, 5e of the guide portion 5b. (C)), the structure is such that the entire transfer arm 5 is raised as it is, and the wafers 2 can be transferred one by one in a vertically erected state to the cleaning processing section 4 (FIG. 6 (company)).

The cleaning processing section 4 of the cleaning processing apparatus 11 is provided with a delivery tank 4a that accommodates the wafers 2 one by one, and a plurality of cleaning tanks 4b to 4e that clean the wafers 2 one by one.

Among the cleaning tanks 4b to 4e, the cleaning tanks 4b and 4c are used for cleaning the wafer 2.
The cleaning tank 4d is a cleaning tank for removing objects such as resist attached to the wafer 2, and the cleaning tank 4d is a cleaning tank for preventing foreign substances from adhering to the wafer 2 after organic substances have been removed.

The transfer tank 4a is a tank in which the wafer 2 is accommodated by the transfer arm 5, and no chemical liquid is introduced into the cleaning tank 4a. This is to prevent the transport arm 5 from getting wet with the chemical solution when the wafer 2 is accommodated in the transfer tank 4a by the transport arm 5.

The cleaning tank (first cleaning tank) 4b contains, for example, H as a chemical solution.
A mixed solution of 2C and pure water is introduced. The amount of H2O2 in the mixed solution is, for example, about 15-16%, and the amount of pure water is, for example, about 84%. The cleaning tank 4b removes organic substances attached to the wafer 2 by removing H2O2 in the cleaning tank 4b, for example.
This tank facilitates the removal process of organic matter in the cleaning tank 4C, which will be described later, by oxidizing the organic matter. Note that the mixed solution in the cleaning tank 4b is, for example, 3 to 5j! /mi
It is circulated and filtered at a rate of about n.

For example, a mixed solution of H2C, NH, OH, and pure water is introduced into the cleaning tank (Jl 2 cleaning tank) 4C as a chemical solution. The amount of HzOz in the mixed solution is, for example, about 14%.
, NH4OH is, for example, about 7%, and the amount of pure water is, for example, about 79%. The cleaning tank 4C is, for example, a Japanese cypress for removing organic matter oxidized by the first cleaning process.

Note that the circulation amount of the mixed solution in the cleaning tank 4C is the same as that in the cleaning tank 4b.

The cleaning tank (third cleaning tank) 4d contains, for example, H as a chemical solution.
A mixed solution of No. 202 and pure water is introduced. The amount of H2O2 in the mixed solution is, for example, about 15-16%, and the amount of pure water is, for example, about 84%. The cleaning tank 4d is a tank for making the exposed surface of the wafer 2, which has been cleaned by removing organic matter, hydrophilic so that foreign matter is less likely to adhere to the exposed surface. Note that the circulation amount of the mixed solution in the cleaning tank 4d is the same as in the cleaning tanks 4b and 4c.

Further, in this embodiment, as shown in FIG. 7, the cleaning tanks 4b to 4d are installed in a state of being immersed in the hot water tank 10. This is because, as will be described later, in this embodiment, the processing temperatures in the cleaning tanks 4b to 4d are set to the same temperature, so the processing temperatures in each of the cleaning tanks 4b to 4d are set to the same hot water tank 10. This is because the structure of the cleaning processing apparatus 1 can be simplified by setting it in the immersed state.

For example, pure water is introduced into the hot water tank 10.

The temperature of pure water in the hot water tank 10 is adjusted by a heater 11 installed at the bottom of the tank. In addition,
The transport mechanism section 12 shown in FIG. 7 is a mechanism section for setting the operation of the transport arm 6. As shown in FIG.

The cleaning tank 4e is a water cleaning tank for removing the chemical solution attached to the wafer 2 in the cleaning tanks 4b to 4d.
The pure water introduced into e is, for example, 3 to 5 β/m i
It is supplied at a rate of about n.

The wafers 2 accommodated in the delivery tank 4a are transferred from the delivery tank 4a to the cleaning tank 4 by the transfer arm 6 in a tact manner, for example.
They are transported to e in order.

The transfer arm 6 has 5 arms having the same structure as the transfer arm 5.
It is constructed by connecting two arms, and each arm is structured to interlock with each other. The arm portion of the transport arm 6 is
In order to prevent chipping of the wafer 2, it is made of, for example, a fluororesin, and the other parts are made of a metal such as aluminum (AI) coated with a fluororesin to make it easy to attach and detach and provide rigidity. .

Next, the cleaning method of this embodiment will be explained with reference to FIGS. 1, 8, and 9(a) and (b).

First, transfer tank 4 a l: The transferred wafer 2 is transferred to the cleaning tank 1' 1F 4b by the transfer arm 6, and then transferred to the cleaning tank 4.
It is immersed in a mixed solution of HaO□ and pure water introduced as a chemical into the chamber b. In the cleaning tank 4b, organic matter 13 (see FIG. 8) attached to the wafer 2 is oxidized by H2O2 in the chemical solution (first cleaning process). This process makes it easier to remove the organic substances 13 attached to the wafer 2 in a second cleaning process to be described later. By the way, since the chemical solution in the cleaning tank 4b does not contain alkaline components such as NH and OH, the processing temperature in the cleaning tank 4b is raised (
For example, even if the temperature is set at about 90° C., the decomposition rate of H2O is slow and the amount of HxO2 in the cleaning tank 4b is not insufficient.

That is, even if the treatment temperature is set high, the oxidation treatment of the organic matter 13 is not inhibited. Therefore, the processing temperature in the cleaning tank 4b can be set high to accelerate the oxidation reaction rate of the organic matter 13 by H202. In this embodiment, the processing temperature in the cleaning tank 4b can be set to, for example, about 90°C. In addition, in the first cleaning treatment, even if the treatment temperature is set high, H2O2
Since the amount of H2O2 is not insufficient, there is no need to supply or replenish H2O2 into the cleaning tank 4b, and the controllability of the supply amount or replenishment amount does not become complicated.

Next, the Ueno 12 that has undergone the first cleaning process is transported to the cleaning tank 4C by the transport arm 6, and immersed in a mixed solution of H2O2, NHOH, and pure water introduced as a chemical into the cleaning tank 4C. In the cleaning tank 4C, the organic matter 13 oxidized during the first cleaning process is removed by H2O, NH, and OH in the cleaning tank 4C (second cleaning process).

By the way, since the chemical solution in the cleaning tank 4C contains alkaline components such as NH4OH, if the processing temperature in the cleaning tank 4C is set higher than before (for example, 90°C), the H3O2 in the cleaning tank 40 will increase. The decomposition rate of HzCla increases, and the amount of HzCla in the cleaning tank 4C decreases. However, in this embodiment, even if the processing temperature is set higher than that of the conventional method, the organic matter 13 adhering to the wafer 2 can be removed satisfactorily for the following reason. That is, in this embodiment, in addition to the fact that the organic matter 13 attached to the wafer 2 housed in the cleaning tank 4C is oxidized and easily removed by the first cleaning process, the organic matter 13 attached to the wafer 2 housed in the cleaning tank 4C is easily removed. The H2O that adhered to the surface of the wafer 2 during the first cleaning process is effectively replenished in the vicinity of the surface, even in a small amount, as shown by the broken line in FIG. 9(a). Even if the treatment temperature is set high, as shown in FIG. 9(b), the organic matter 13
can be effectively removed. Therefore, cleaning tank 4
By setting the processing temperature in C higher than before, organic matter 1
Organic matter 13 that increases the removal speed of 3 and leaves the organic matter 13 in the cleaning tank 40
The removal processing time can be reduced compared to the conventional method. In this embodiment, by setting the processing temperature in the cleaning tank 4C to, for example, about 90° C., the processing time in the cleaning tank 4C can be reduced to, for example, about 1 minute. In addition, in the second cleaning process, even if the process temperature is set higher than before, HxO is effectively replenished near the surface of the wafer 2 for the reasons described above, and the process time is short.
The amount of H20□ supplied or replenished into the cleaning tank 4C can be small, and its controllability is not complicated.

Subsequently, the wafer 2 that has undergone the second cleaning process is transported to the cleaning tank 4d by the transport arm 6, and immersed in a mixed solution of H20□ and pure water introduced as a chemical into the cleaning tank 4d.

In the cleaning tank 4d, the exposed surface of the wafer 2 is made hydrophilic by H2O2 in the cleaning tank 4d to make it difficult for foreign matter to adhere to the exposed surface (third cleaning process). For the same reason as the first cleaning process, the amount of H202 in the cleaning tank 4d will not be insufficient even if the process temperature is set high (for example, about 90°C).In other words, even if the process temperature is set high, the wafer The hydrophilization of the exposed surface of the wafer 2 is not inhibited. Therefore, by setting the processing temperature in the cleaning tank 4d high, the reaction speed of the hydrophilization of the exposed surface of the wafer 2 by H2O2 can be accelerated.In this example, By setting the processing temperature in the cleaning tank 4d to, for example, about 90° C., the processing time in the cleaning tank 4d can be reduced to, for example, about 1 minute.

In addition, in the third cleaning process, for the same reason as the first cleaning process, even if the treatment temperature is set high, there is no need to supply or replenish H1O2 into the cleaning tank 4d, and the supply amount and replenishment amount controllability is not complicated.

Finally, the wafer 2 on which the third cleaning process has been completed is transferred to the cleaning tank 4e by the transfer arm 6, and is washed with water for about 1 minute, for example, in the cleaning tank 4e. The chemical solution adhering to the wafer 2 during the cleaning process is removed.

As described above, according to this embodiment, it is possible to obtain the following effects.

(1) H3O2 and NH introduced into the cleaning tank 4C.

Prior to the second cleaning process in which the wafer 2 is immersed in a mixed solution of OH and pure water to remove organic substances 13 attached to the wafer 2, a mixed solution of H2O and pure water is introduced into the cleaning tank 4b. The organic matter 13 attached to the wafer 2 is removed by dipping the wafer 2 in
By performing the first cleaning treatment that oxidizes the
Although the decomposition rate of O2 increases and the amount decreases, even a small amount of H2O2 attached to the object to be processed during the first cleaning process can be effectively removed near the surface of the wafer 2 immersed in the mixed solution. Since the organic matter 13 is replenished, even if the treatment temperature is set higher than before, it is possible to effectively remove the organic matter 13 that has become oxidized and easily removed by the first cleaning treatment.

Therefore, when removing the organic matter 13 attached to the wafer 2 using the single-wafer cleaning method, the cleaning time for the wafer 2 can be shortened without reducing the cleaning ability, and the cleaning process for the wafer 2 can be reduced. It becomes possible to increase the number of sheets.

(2) After the second cleaning process, the wafer 2 is immersed in a mixed solution of H2O and pure water introduced into the cleaning tank 4d, and the exposed surface of the wafer 2 where the organic matter 13 has been removed is By making the wafer 2 hydrophilic, it becomes difficult for foreign matter to adhere to the exposed surface of the wafer 2, so that the cleanliness of the wafer 2 can be improved.

(3) In the first and third cleaning treatments, even if the treatment temperature is set at a high temperature (for example, about 90°C), the cleaning tank 4b
Since the amount of H202 in 4C1 is not insufficient, there is no need to supply or replenish H2O2 into the cleaning tanks 4b and 4d. Furthermore, in the second cleaning process, even if the process temperature is set high (eg, about 90° C.), the amount of H3O2 supplied or replenished into the cleaning tank 4c can be small due to the above (1). As a result, the controllability of the supply amount and replenishment amount of HO2 does not become complicated from the first cleaning process to the third cleaning process. Therefore, when removing the organic matter 13 attached to the wafer 2 using the single-wafer cleaning method, the cleaning ability can be stabilized without complicating the controllability of the supply amount or replenishment amount of HO2. , it becomes possible to perform a cleaning process on the wafer 2 with good reproducibility.

(4) According to (1) to (3) above, it is possible to improve the yield and reliability of semiconductor integrated circuit radicals.

As above, the invention made by the present inventor has been specifically explained based on Examples, but it should be noted that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Not even.

For example, in the above embodiment, a case has been described in which the transfer arm for transferring wafers to each of the cleaning tanks has a structure in which a plurality of arms are connected, but the structure is not limited to this. It may be provided independently for each.

Furthermore, in the above embodiment, a case was explained in which a delivery tank, a cleaning tank for removing organic matter, and a water washing tank were arranged in the cleaning processing section, but the present invention is not limited to this. In addition to cleaning tanks and water rinsing tanks for removing organic substances, hydrofluoric acid (HF) cleaning tanks and hydrochloric acid (HCf)
) A cleaning tank may be installed.

Further, as shown in FIG. 10, a drying processing section 14 may be installed after the cleaning processing section. The drying processing section 14 includes
Although not shown, a first infrared lamp that can emit infrared rays with a wavelength of, for example, about 1.2 μm and a first infrared lamp that can emit infrared rays with a wavelength of, for example, about 2.5 μm.
A second infrared lamp capable of emitting infrared radiation with a wavelength of approximately

During the drying process, the first infrared lamp is placed, for example, on the main surface side of the wafer 2, and the second infrared lamp is placed on the back side of the wafer 2. Note that the transport arm 15 is
The wafer 2 is carried into the drying processing section 14, and the drying processing section 1
This is an arm for carrying out the wafer 2 from the wafer 4.

In the above explanation, the invention made by the present inventor was mainly applied to wafer cleaning processing technology, which is the background field of application, but the invention is not limited to this and can be applied in various ways, for example, to wafers. It is possible to apply the present invention to the cleaning treatment of other objects to be treated, such as a photomask that transfers a predetermined pattern or a glass plate for liquid crystal.

〔Effect of the invention〕

Among the inventions disclosed in this application, the effects obtained by typical inventions are briefly described below.

That is, according to the first invention, it is possible to obtain the following effects.

(1)6 For example, the object to be treated is immersed in a mixed solution of H202, NH, OH, and pure water, and prior to the second cleaning treatment in which the particles adhering to the object are removed, H,0 and purified By immersing the object to be treated in a mixed solution with water and performing the first cleaning treatment to oxidize the organic matter adhering to the object, the treatment temperature can be set higher than before in the second cleaning treatment.
H2 in a mixed solution of 2O2, NH, OH and pure water
The rate of decomposition of 0z increases and its amount decreases, but the H, 0, that adhered to the object during the first cleaning process is present near the surface of the object immersed in the mixed solution. Since the organic matter is effectively replenished, even if the treatment temperature is set higher than before, the organic substances that are easily oxidized and removed by the first cleaning treatment can be removed satisfactorily. Therefore, when removing organic matter adhering to a workpiece using a single-wafer cleaning method, it is possible to shorten the cleaning time of the workpiece without reducing the cleaning ability. It becomes possible to increase the number of sheets to be cleaned.

t2), in the first and third cleaning treatments, N is added to the chemical solution.
Since it does not contain alkaline components such as H and OH, the amount of HO2 in the chemical solution does not become insufficient even if the treatment temperature is set high, and there is no need to supply or replenish H202. During the second cleaning process, the H2O2 that adhered to the workpiece during the first cleaning process is effectively replenished near the surface of the workpiece, so even if the processing temperature is set high, the H2O2 Only a small amount of supply or replenishment is required. As a result, the controllability of the supply amount and replenishment amount of H2O2 does not become complicated during the first to third cleaning treatments. Therefore, when removing organic matter adhering to a workpiece using a single-wafer cleaning method, it is difficult to control the supply amount or replenishment amount of H2O2.
l! It becomes possible to stabilize the cleaning ability without complicating the cleaning process.

[Brief explanation of the drawing]

Fig. 1 is a perspective view of the main parts of a cleaning processing apparatus that is an embodiment of the present invention, Fig. 9J2 (a), et al.) are perspective views showing a loader of the washing processing apparatus, Fig. 3 (a), (b) ) is a front view of the workpiece and cassette to explain the transport process when transporting the workpiece from the loader to the cleaning processing section, FIG. 4 is a front view showing the transport arm of the cleaning processing apparatus, and FIG. is a side view of the transfer arm shown in Fig. 4, and Fig. 6 (
a) to (6) are side views of the transport arm and the workpiece, illustrating the process of holding and transporting the workpiece by the transport arm; FIG. 7 is a sectional view of essential parts showing the cleaning tank of the cleaning processing apparatus; FIG. 18 and FIGS. 9(a) and 9(a) are explanatory diagrams schematically explaining the cleaning method of this embodiment, and FIG. 10 is a perspective view of the main parts of a cleaning device that is another embodiment of the present invention. It is. 1...Cleaning processing device, 2...Wafer (workpiece),
3...Loader, 3a...Rotary table, 4...Cleaning processing section, 4a...Delivery paddle, 4b...Cleaning tank (first cleaning tank), 4C...Cleaning tank (first cleaning tank) (2 cleaning tank), 4
d...Cleaning tank (third cleaning tank), 4e...Cleaning tank,
5, 6...Transportation arm, 5a...Arm part, 5b.
... Guide part, 5C... Support part, 5d... Claw part, 5
e... Holding section, 7... Cassette, 8... Button, 9... Guide, 10... Hot water tank, 11... Heater, 12... Transport mechanism section, 13... organic matter, 14.
... Drying processing section, 15... Transfer arm, A... Ueno 1 transfer side, B... Wafer supply side. Agent Patent Attorney Kazumi Tsutsui Figure 4d: Cleaning tank (wpJ Sannokosenji) Figure 3 (Ql Figure C Figure 5 Figure (C) Figure (d) Figure 13: Organic matter Figures (a) (b)

Claims (1)

[Scope of Claims] 1. A cleaning method in which the object to be treated is cleaned one by one, and when removing organic substances attached to the object to be processed, the object to be processed is washed with hydrogen peroxide and pure water. A cleaning treatment method characterized by performing a first cleaning treatment in which the object to be treated is immersed in a mixed solution of hydrogen peroxide, ammonium hydroxide, and pure water. . 2. The cleaning treatment method according to claim 1, wherein after the second cleaning treatment, a third cleaning treatment is performed in which the object to be treated is immersed in a mixed solution of hydrogen peroxide and pure water. 3. A cleaning processing apparatus comprising a cleaning tank for removing organic matter adhering to the processing object in a cleaning processing section for cleaning the processing object one by one, the washing tank being equipped with hydrogen peroxide. A first cleaning tank into which a mixed solution of hydrogen peroxide, ammonium hydroxide, and pure water was introduced, a second washing tank into which a mixed solution of hydrogen peroxide, ammonium hydroxide, and pure water, and a mixture of hydrogen peroxide and pure water were introduced. A cleaning processing device comprising: a third cleaning tank into which a mixed solution is introduced.