JPH0471352B2 - - Google Patents

Info

Publication number
JPH0471352B2
JPH0471352B2 JP60132158A JP13215885A JPH0471352B2 JP H0471352 B2 JPH0471352 B2 JP H0471352B2 JP 60132158 A JP60132158 A JP 60132158A JP 13215885 A JP13215885 A JP 13215885A JP H0471352 B2 JPH0471352 B2 JP H0471352B2
Authority
JP
Japan
Prior art keywords
magnetic
magnetoresistive elements
magnetoresistive
magnetoresistive element
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60132158A
Other languages
Japanese (ja)
Other versions
JPS6297380A (en
Inventor
Yukio Sekine
Makoto Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP60132158A priority Critical patent/JPS6297380A/en
Publication of JPS6297380A publication Critical patent/JPS6297380A/en
Publication of JPH0471352B2 publication Critical patent/JPH0471352B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/10Magnetoresistive devices

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  • Hall/Mr Elements (AREA)

Description

【発明の詳細な説明】 (イ) 産業上の利用分野 本発明は磁気抵抗素子を利用した磁気センサに
関するものである。
DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a magnetic sensor using a magnetoresistive element.

(ロ) 従来の技術 Insb、Insb−Nisb、InAs等のキヤリア移動度
が高い半導体またはNi−Co、Ni−Fe、Ni−Fe
−Co等の強磁性体はこれに磁性体を作用させた
とき抵抗値が変化するという性質を有し、この性
質を利用して磁気の存在、磁性体の存在、移動の
検出を行なう磁気センサが実用化されている。
(b) Conventional technology Semiconductors with high carrier mobility such as Insb, Insb-Nisb, InAs, or Ni-Co, Ni-Fe, Ni-Fe
-Ferromagnetic materials such as Co have the property that the resistance value changes when a magnetic material is applied to it, and this property is used to detect the presence of magnetism, the presence of magnetic material, and the movement of magnetic materials.Magnetic sensors has been put into practical use.

一般に従来の磁気センサ21は実願昭57−
157755号公報(第3図イ・ロに示す如く筐体26
は金属性であつて一端部を閉じた四角筒状に形成
され、下端部は蓋部材にて閉鎖され、内部にはマ
ウント基板27、センサユニツト28等が配置さ
れ、センサユニツト28とスペーサ29で囲まれ
た部分を除く他の空間部には合成樹脂が充填せし
めれていた。センサユニツト28はマウント基板
27上面の磁性体基板22上に接着用樹脂を用い
て一対の磁気抵抗素子23,24を並列固定して
形成され、またスペーサ29はセンサユニツト2
8の四方に設置してあつた。
Generally, the conventional magnetic sensor 21 is
Publication No. 157755 (The casing 26 as shown in Figure 3 A and B)
is made of metal and is formed in the shape of a rectangular cylinder with one end closed, the lower end is closed with a lid member, the mount board 27, sensor unit 28, etc. are arranged inside, and the sensor unit 28 and spacer 29 are arranged. The remaining space except the enclosed area was filled with synthetic resin. The sensor unit 28 is formed by fixing a pair of magnetoresistive elements 23 and 24 in parallel on the magnetic substrate 22 on the upper surface of the mount substrate 27 using adhesive resin, and the spacer 29 is attached to the magnetic substrate 22 on the upper surface of the mount substrate 27.
They were installed on all sides of 8.

動作原理としては第4図の如く、一対の磁気抵
抗素子23,24を磁石の磁極面に配置して磁気
的にバイアスする。磁性体が下方より近づき磁気
抵抗素子24に来ると磁石より発生する磁束は磁
性体に集中する。従つて磁気抵抗素子24の抵抗
が増加する。この2つの磁気抵抗素子23,24
を第4図のように接続し、低電圧回路に接続する
と出力端子には磁性体の移動に伴つて交流信号が
現れ、磁性体の検出が可能になる。
As for the operating principle, as shown in FIG. 4, a pair of magnetoresistive elements 23 and 24 are placed on the magnetic pole face of a magnet and magnetically biased. When the magnetic body approaches from below and reaches the magnetoresistive element 24, the magnetic flux generated by the magnet concentrates on the magnetic body. Therefore, the resistance of the magnetoresistive element 24 increases. These two magnetoresistive elements 23, 24
When connected as shown in FIG. 4 and connected to a low voltage circuit, an alternating current signal appears at the output terminal as the magnetic material moves, making it possible to detect the magnetic material.

更に第3図イの如く磁気抵抗素子23,24の
上に長さ方向と直角にラスタ25という短絡スト
ライブが取付けられている。これは電極の幅と比
較して短い電極間距離をもつた磁気抵抗素子が直
列に接続されているものと等価であり、ホール電
界を抑制すると同時に何個も連ねることによつて
抵抗値を大きくとることができる。
Furthermore, as shown in FIG. 3A, a short-circuit stripe called a raster 25 is attached above the magnetoresistive elements 23 and 24 at right angles to the length direction. This is equivalent to magnetoresistive elements connected in series with a distance between the electrodes that is short compared to the width of the electrodes, and at the same time suppresses the Hall electric field and increases the resistance value by connecting many of them. You can take it.

この方法を用いて金融機関では特殊な磁気イン
クを用いて印刷してある紙幣・小切手・手形の帳
票の読み取りをおこなつている。
Financial institutions use this method to read bills, checks, and bills that are printed using special magnetic ink.

(ハ) 発明が解決しようとする問題点 一般の紙幣は大きさ・色・使用インクの違い、
透かしなどの特徴があるため判別は容易だが、特
殊な紙幣は大きさ・使用インク・色等が同一であ
るため、磁気インクを使用した磁気パターンによ
る識別依存度が高く、現行の磁気センサよりも更
に解像度、安定度等の性能を向上する必要性が出
て来た。
(c) Problems to be solved by the invention General banknotes differ in size, color, and ink used;
It is easy to distinguish because of features such as watermarks, but since special banknotes have the same size, ink, color, etc., identification is highly dependent on magnetic patterns using magnetic ink, which makes them easier to identify than current magnetic sensors. Furthermore, it has become necessary to improve performance such as resolution and stability.

例えば第5図イの如く、二つの磁気抵抗素子
MR1,MR2の間隔Pより幅の狭い文字パターン
が到来した場合、出力の信号波形は一端最大値を
とつた後、零レベルにもどる。しかし第5図ニに
示すように、磁気抵抗素子MR1,MR2の幅r及
びその間隔pにそれぞれ等しい間隔q及び幅sを
持つた文字パターンが連続して到来した場合の信
号波形は、幅の広いパターンが一つ到来した場合
と同じであり、従つて磁気センサは上下の2種類
のパターンを同一として検知してしまう。
For example, as shown in Figure 5A, two magnetoresistive elements
When a character pattern whose width is narrower than the interval P between MR 1 and MR 2 arrives, the output signal waveform reaches its maximum value and then returns to the zero level. However, as shown in FIG. 5D, when a character pattern with an interval q and a width s equal to the width r and the interval p of the magnetoresistive elements MR 1 and MR 2 , respectively, arrives successively, the signal waveform is as follows. This is the same as when one wide pattern arrives, and therefore the magnetic sensor detects the upper and lower two types of patterns as being the same.

(ニ) 問題点を解決するための手段 本発明は斯上の点に鑑みてなされ、磁性体基板
2上に固着される一対の磁気抵抗素子3,4を有
する磁気センサに於て、前記一方の磁気抵抗素子
の下に磁性体10を取付けることで解決するもの
である。
(d) Means for Solving the Problems The present invention has been made in view of the above points, and provides a magnetic sensor having a pair of magnetoresistive elements 3 and 4 fixed on a magnetic substrate 2. This problem is solved by attaching the magnetic body 10 under the magnetoresistive element.

(ホ) 作用 ここで第6図に磁気抵抗素子の磁束密度に対す
る抵抗の変化を示す如く、(RBは磁気抵抗素子の
抵抗、ROは磁束密度が零の時の磁気抵抗素子の
抵抗である。)磁気バアイスをかけずにおくと抵
抗の変化は小さく、逆にに磁気バイアスをかける
と抵抗の変化は大きくなる。従つて前記一方の磁
気抵抗素子3の下に磁性体10を取付け磁気バア
イスをかけると、第5図ニに示す如く磁気抵抗素
子の幅r及びその間隔pにそれぞれ等しい間隔q
及び幅sを持つた文字パターンが連続して到来し
ても出力は相殺されず検出できる。
(e) Effect Here, as shown in Figure 6, which shows the change in resistance with respect to the magnetic flux density of the magnetoresistive element, (R B is the resistance of the magnetoresistive element, and R O is the resistance of the magnetoresistive element when the magnetic flux density is zero. ) If no magnetic bias is applied, the change in resistance will be small; on the other hand, if a magnetic bias is applied, the change in resistance will be large. Therefore, when the magnetic body 10 is attached under one of the magnetoresistive elements 3 and a magnetic bias is applied, the distance q is equal to the width r of the magnetoresistive element and the interval p thereof, as shown in FIG. 5D.
Even if character patterns having widths s and s arrive consecutively, the outputs are not offset and can be detected.

(ヘ) 実施例 以下に本発明に関する磁気センサの一実施例を
第1図・第2図を参照しながら説明する。
(F) Embodiment An embodiment of the magnetic sensor according to the present invention will be described below with reference to FIGS. 1 and 2.

まず第1図の磁性体基板2上に固着される一対
の磁気抵抗素子3,4の製法を概略述べる。
First, a method for manufacturing the pair of magnetoresistive elements 3 and 4 fixed on the magnetic substrate 2 shown in FIG. 1 will be briefly described.

InSbのインゴツトをダイヤモンドソー等を用
いて約300μmの厚さのウエハにスライスした後前
記ウエハの歪みを取除くためにミラーポリツシユ
を行なう。次に前記ウエハにラスタとなる銅を積
層する領域を溝に形成するために蝕刻をおこな
う。ここではフオトレジストを所望のパターンに
して、磁気抵抗素子3,4の上に長さ方向と直角
になるようにストライブ状に溝(ここででは略
す)を掘り込む。続いて硫酸銅を用いて電界メツ
キを行ない前記溝に銅5を積層する。更にフオト
レジストを除去した後、第1図に図示されている
如くInSbウエハを磁気抵抗素子3,4の形状に
抜くためにフオトレジスト処理して前記溝より深
くエツチングする。ここでは約10μmエツチング
する。最後にガラス基板上に接着剤を用いて前記
InSbウエハの表面を下方に接着しバツクラツプ
する。その結果ラスタ5の形成された磁気抵抗素
子3,4が第1図に示されている形状で抜ける。
After slicing the InSb ingot into wafers approximately 300 μm thick using a diamond saw or the like, mirror polishing is performed to remove distortion of the wafers. Next, the wafer is etched to form grooves in which copper is laminated in a raster pattern. Here, the photoresist is formed into a desired pattern, and grooves (not shown here) are dug in stripes on the magnetoresistive elements 3 and 4 so as to be perpendicular to the length direction. Subsequently, electroplating is performed using copper sulfate to laminate copper 5 in the groove. Further, after removing the photoresist, the InSb wafer is treated with the photoresist and etched deeper than the grooves in order to cut out the shape of the magnetoresistive elements 3 and 4 as shown in FIG. Here, approximately 10 μm of etching is performed. Finally the above using adhesive on the glass substrate
Glue the surface of the InSb wafer downward and back-lap it. As a result, the magnetoresistive elements 3 and 4 on which the raster 5 is formed come out in the shape shown in FIG.

次に本発明に依る磁気センサ1の構成を示す。
筐体6は金属性であつて一端部を閉じた四角筒状
に形成され、下端開口部は蓋部材にて閉鎖され、
内部にはマウント基板7、センサユニツト8等が
配置され、センサユニツト8とスペーサ9で囲ま
れた部分を除く他の空間部には合成樹脂が充填さ
れている。センサユニツト8はマウント基板7上
面の磁性体基板2上に接着用樹脂を用いて前記一
対の磁気抵抗素子3,4を並列固定して形成さ
れ、またスペーサ9はセンサユニツト8の四方に
設置してある。更に前記一方の磁気抵抗素子3の
下に磁気バイアスをかける磁性体10を設ける。
ここで第2図に示す磁性体基板2の如く下面に磁
束が洩れないように切り込みを設けてもよい。
Next, the configuration of the magnetic sensor 1 according to the present invention will be shown.
The casing 6 is made of metal and is formed into a rectangular tube shape with one end closed, and the lower end opening is closed with a lid member.
A mount board 7, a sensor unit 8, etc. are arranged inside, and the space other than the part surrounded by the sensor unit 8 and spacer 9 is filled with synthetic resin. The sensor unit 8 is formed by fixing the pair of magnetoresistive elements 3 and 4 in parallel on the magnetic substrate 2 on the upper surface of the mount substrate 7 using adhesive resin, and spacers 9 are installed on all sides of the sensor unit 8. There is. Furthermore, a magnetic body 10 for applying a magnetic bias is provided under one of the magnetoresistive elements 3.
Here, as in the magnetic substrate 2 shown in FIG. 2, a cut may be provided on the lower surface to prevent magnetic flux from leaking.

本発明の特徴とする所は前記一方の磁気抵抗素
子3の下に磁気バイアスをかける磁性体10にあ
る。磁気バイアスのかかる一方の磁気抵抗素子3
の抵抗は大きく変化をし、他方の磁気バイアスの
かからない磁気抵抗素子4の抵抗は小さく変化す
る。従つて第5図ニの如く磁気抵抗素子の幅r及
びその間隔pにそれぞれ等しい間隔q及び幅sを
持つた文字パターンが連続して到来しても出力が
相殺されずに検出できる。
The feature of the present invention lies in the magnetic body 10 that applies a magnetic bias under the one magnetoresistive element 3. One magnetoresistive element 3 to which magnetic bias is applied
The resistance of the other magnetoresistive element 4 to which no magnetic bias is applied changes small. Therefore, as shown in FIG. 5D, even if character patterns having a spacing q and a width s that are equal to the width r and the spacing p of the magnetoresistive element arrive in succession, the outputs can be detected without being canceled out.

(ト) 発明の効果 本発明は以上の説明からも明らかな如く、前記
一方の磁気抵抗素子3の下に磁気バイアスをかけ
る磁性体10を設けることで、磁気抵抗素子3,
4の抵抗変化が相違し、第5図ニの如く磁気抵抗
素子の幅r及びその間隔pにそれぞれ等しい間隔
q及び幅sを持つた文字パターンが連続して到来
しても出力が相殺されずに検出が可能と成り、よ
り高度の識別が可能となる。
(G) Effects of the Invention As is clear from the above description, the present invention provides a magnetic body 10 that applies a magnetic bias under one of the magnetoresistive elements 3, so that the magnetoresistive elements 3,
Even if the resistance changes of 4 are different, and character patterns with spacing q and width s equal to the width r and spacing p of the magnetoresistive element, respectively, arrive in succession as shown in FIG. 5D, the outputs do not cancel each other out. Detection becomes possible, and more advanced identification becomes possible.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例である磁気センサの
部分破砕平面図、第2図は本発明の一実施例であ
る磁気センサの部分破砕側面図、第3図イは従来
の磁気センサの部分破砕平面図、第3図ロは従来
の磁気センサの部分破砕側面図、第4図は磁気セ
ンサの回路図、第5図イ乃至第5図ニは文字パタ
ーンと出力信号波形の関係を示す図、第6図は磁
束密度と抵抗比の関係を示す図である。 1は磁気センサ、2は磁性体基板、3,4は磁
気抵抗素子、5はラスタ、6は筐体、7はマウン
ト基板、8はセンサユニツト、9はスペーサ、1
0は磁石である。
FIG. 1 is a partially fragmented plan view of a magnetic sensor that is an embodiment of the present invention, FIG. 2 is a partially fragmented side view of a magnetic sensor that is an embodiment of the invention, and FIG. 3B is a partially exploded side view of a conventional magnetic sensor, FIG. 4 is a circuit diagram of the magnetic sensor, and FIGS. 5A to 5D show the relationship between character patterns and output signal waveforms. 6 are diagrams showing the relationship between magnetic flux density and resistance ratio. 1 is a magnetic sensor, 2 is a magnetic substrate, 3 and 4 are magnetoresistive elements, 5 is a raster, 6 is a housing, 7 is a mount board, 8 is a sensor unit, 9 is a spacer, 1
0 is a magnet.

Claims (1)

【特許請求の範囲】 1 検出面を有する筐体と、 前記検出面に対向するように前記筐体内部に固
定され、少なくとも一対の磁気抵抗素子を形成し
た磁性体基板と、 前記一方の磁気抵抗素子の下方に固定され前記
一方の磁気抵抗素子に選択的に磁気バイアスをか
ける磁性体とを具備し、 前記他方の磁気抵抗素子は無バイアスであるこ
とを特徴とする磁気センサ。
[Scope of Claims] 1. A casing having a detection surface; a magnetic substrate fixed inside the casing so as to face the detection surface and forming at least one pair of magnetoresistive elements; and one of the magnetic resistance elements. A magnetic sensor, comprising: a magnetic body fixed below the element and selectively applying a magnetic bias to the one magnetoresistive element, the other magnetoresistive element being unbiased.
JP60132158A 1985-06-18 1985-06-18 Magnetic sensor Granted JPS6297380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60132158A JPS6297380A (en) 1985-06-18 1985-06-18 Magnetic sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60132158A JPS6297380A (en) 1985-06-18 1985-06-18 Magnetic sensor

Publications (2)

Publication Number Publication Date
JPS6297380A JPS6297380A (en) 1987-05-06
JPH0471352B2 true JPH0471352B2 (en) 1992-11-13

Family

ID=15074716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60132158A Granted JPS6297380A (en) 1985-06-18 1985-06-18 Magnetic sensor

Country Status (1)

Country Link
JP (1) JPS6297380A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2707850B2 (en) * 1991-01-28 1998-02-04 日本電気株式会社 Magnetoresistive element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038477A (en) * 1973-08-07 1975-04-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038477A (en) * 1973-08-07 1975-04-09

Also Published As

Publication number Publication date
JPS6297380A (en) 1987-05-06

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