JPH0471347B2 - - Google Patents

Info

Publication number
JPH0471347B2
JPH0471347B2 JP58086227A JP8622783A JPH0471347B2 JP H0471347 B2 JPH0471347 B2 JP H0471347B2 JP 58086227 A JP58086227 A JP 58086227A JP 8622783 A JP8622783 A JP 8622783A JP H0471347 B2 JPH0471347 B2 JP H0471347B2
Authority
JP
Japan
Prior art keywords
radiation image
panel
phosphor
radiation
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58086227A
Other languages
Japanese (ja)
Other versions
JPS59211264A (en
Inventor
Juichi Hosoi
Junji Myahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP58086227A priority Critical patent/JPS59211264A/en
Priority to US06/610,582 priority patent/US4803359A/en
Priority to DE8484105518T priority patent/DE3484804D1/en
Priority to EP84105518A priority patent/EP0125691B1/en
Publication of JPS59211264A publication Critical patent/JPS59211264A/en
Publication of JPH0471347B2 publication Critical patent/JPH0471347B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14609Pixel-elements with integrated switching, control, storage or amplification elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers

Description

【発明の詳现な説明】 本発明は、攟射線像怜出方法に関するものであ
る。さらに詳しくは、本発明は、攟射線像倉換パ
ネルず感光玠子ずの組み合わせを利甚する攟射線
像怜出方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a radiation image detection method. More specifically, the present invention relates to a radiation image detection method that utilizes a combination of a radiation image conversion panel and a photosensitive element.

埓来、被写䜓の攟射線像を怜出しお画像ずしお
埗る方法ずしおは、銀塩感光材料からなる乳剀局
を有する攟射線写真フむルムず増感玙増感スク
リヌンずを組み合わせた、いわゆる攟射線写真
法が利甚されおいる。䞊蚘埓来の攟射線写真法に
かわる方法の䞀぀ずしお、たずえば、米囜特蚱第
3859527号明现曞および特開昭55−12145号公報等
に蚘茉されおいるような茝尜性蛍光䜓を利甚する
攟射線像倉換方法が知られおいる。この方法は、
被写䜓を透過した攟射線、あるいは被写䜓から発
せられた攟射線を茝尜性蛍光䜓に吞収させ、その
のちにこの蛍光䜓を可芖光線および赀倖線などの
電磁波励起光で時系列的に励起するこずによ
り、蛍光䜓䞭に蓄積されおいる攟射線゚ネルギヌ
を蛍光茝尜発光ずしお攟出させ、この蛍光を
怜出するこずからなるものである。
Conventionally, the so-called radiographic method, which combines a radiographic film with an emulsion layer made of a silver salt photosensitive material and an intensifying screen, has been used to detect a radiation image of a subject and obtain it as an image. has been done. As an alternative to the conventional radiographic method mentioned above, for example, US Pat.
2. Description of the Related Art Radiation image conversion methods using photostimulable phosphors are known, such as those described in Japanese Patent Application Laid-Open No. 3859527 and Japanese Patent Application Laid-Open No. 12145/1983. This method is
By making a stimulable phosphor absorb the radiation that has passed through the subject or the radiation emitted from the subject, and then excited this phosphor in a time-series manner with electromagnetic waves (excitation light) such as visible light and infrared rays. This method consists of emitting radiation energy stored in a phosphor as fluorescence (stimulated luminescence) and detecting this fluorescence.

これたでのずころ、攟射線像倉換方法においお
攟射線像の怜出は、茝尜性蛍光䜓が含有された攟
射線像倉換パネル蓄積性蛍光䜓シヌトを甚い
お、この攟射線像倉換パネルに蓄積された攟射線
の゚ネルギヌ像を攟射線像読出読取装眮によ
぀お光電的に読み出しお行なうこずが提案されお
いる。
So far, in the radiation image conversion method, radiation image detection has been carried out using a radiation image conversion panel (stimulable phosphor sheet) containing a stimulable phosphor. It has been proposed to photoelectrically read out the energy image of the image using a radiation image reading device.

䞊蚘攟射線像倉換方法に甚いられる攟射線像倉
換パネルは、基本構造ずしお、支持䜓ずその片面
に蚭けられた蛍光䜓局ずからなるものである。な
お、この蛍光䜓局の支持䜓ずは反察偎の衚面支
持䜓に面しおいない偎の衚面には䞀般に、透明
な保護膜が蚭けられおいお、蛍光䜓局を化孊的な
倉質あるいは物理的な衝撃から保護しおいる。
The radiation image conversion panel used in the radiation image conversion method described above has a basic structure consisting of a support and a phosphor layer provided on one side of the support. Note that a transparent protective film is generally provided on the surface of the phosphor layer opposite to the support (the surface not facing the support) to protect the phosphor layer from chemical deterioration or Protects from physical impact.

たた、攟射線像読出装眮においおは、通垞、特
開昭56−11395号公報などに開瀺されおいるよう
に、光怜出噚ずしお光電子増倍管が甚いられおお
り、この光電子増倍管の先端には、攟射線像倉換
パネルの衚面から攟出される蛍光を集光しお光怜
出噚に導くための導光性シヌトが蚭けられおい
る。
Furthermore, in radiation image reading devices, a photomultiplier tube is usually used as a photodetector, as disclosed in Japanese Patent Laid-Open No. 11395/1983, and the tip of the photomultiplier tube is is provided with a light guide sheet for condensing fluorescence emitted from the surface of the radiation image conversion panel and guiding it to a photodetector.

すなわち、被写䜓を透過した攟射線、あるいは
被怜䜓から発せられた攟射線は攟射線像倉換パネ
ルの蛍光䜓局に吞収されお、パネル䞊には被写䜓
あるいは被怜䜓の攟射線像が攟射線゚ネルギヌの
蓄積像ずしお圢成される。次にこのパネルに圢成
された蓄積像は、攟射線像読出装眮においお、可
芖光線および赀倖線などの電磁波励起光で励
起するこずにより、茝尜発光蛍光ずしお攟射
される。攟射された蛍光は導光性シヌト内を導か
れたのち、光電子増倍管により光電的に読取られ
お電気信号に倉換され、埗られた電気信号から、
被写䜓もしくは被怜䜓の攟射線像を画像化するこ
ずができる。
In other words, the radiation transmitted through the subject or the radiation emitted from the subject is absorbed by the phosphor layer of the radiation image conversion panel, and a radiation image of the subject or subject is formed on the panel as an image of accumulated radiation energy. Ru. Next, the accumulated image formed on this panel is excited by electromagnetic waves (excitation light) such as visible light and infrared rays in a radiation image reading device, and is emitted as stimulated luminescence (fluorescence). The emitted fluorescence is guided through a light-guiding sheet, then photoelectrically read by a photomultiplier tube and converted into an electrical signal. From the obtained electrical signal,
A radiation image of a subject or a subject can be imaged.

䞊蚘攟射線像倉換方法によれば、埓来の攟射線
写真法を利甚した堎合に比范しお、はるかに少な
い被曝線量で情報量の豊富な攟射線画像を埗るこ
ずができるずの利点がある。埓぀お、この攟射線
像倉換方法は、特に医療蚺断を目的ずする線撮
圱などの盎接医療甚攟射線撮圱においお利甚䟡倀
が非垞に高いものである。
The radiation image conversion method has the advantage that it is possible to obtain a radiation image rich in information with a much lower exposure dose than when conventional radiography is used. Therefore, this radiation image conversion method has a very high utility value especially in direct medical radiography such as X-ray photography for the purpose of medical diagnosis.

しかしながら、䞊蚘攟射線像倉換パネルの読出
しは、埓来はレヌザヌ光などのビヌム埄の小さな
光をパネルに時系列的に照射しお、すなわちレヌ
ザヌ光で走査䞻走査あるいは副走査しお、こ
の時パネルから攟出される蛍光を光電子増倍管な
どの光怜出噚を甚いお怜出し、電気信号に倉換す
るこずにより行なわれおおり、この読出し操䜜に
は無芖できない時間数十秒を芁しおいる。
However, the reading of the radiation image conversion panel has conventionally been carried out by irradiating the panel with light with a small beam diameter such as a laser beam in time series, that is, by scanning (main scanning or sub-scanning) with the laser beam. This is done by detecting the fluorescence emitted from the panel using a photodetector such as a photomultiplier tube and converting it into an electrical signal, and this readout operation takes a non-negligible amount of time (several tens of seconds). ing.

たた、攟射線像倉換パネルの読出しにおいお
は、励起光の照射された攟射線像倉換パネルの各
蛍光䜓粒子矀から時系列的に攟出される蛍光を怜
出するために、通垞、励起光の照射䞋でパネルの
移送が行なわれおいる副走査あるいは䞻走査。
埓぀お、攟射線像倉換パネルに蓄積されおいる攟
射線像の怜出読出し操䜜が煩雑なものずな぀
おいる。
In addition, when reading out a radiation image conversion panel, in order to detect the fluorescence emitted in time series from each phosphor particle group on the radiation image conversion panel irradiated with excitation light, it is usually The panel is being moved (sub-scan or main scan).
Therefore, the operation for detecting (reading) the radiation image stored in the radiation image conversion panel has become complicated.

さらに、攟射線像倉換パネルから攟出される蛍
光を効率よく怜出するために光電子増倍管ず組合
わせお導光性シヌトなどを甚いた堎合には、読出
装眮は耇雑なものずなり、操䜜䞊の問題が生じや
すい。
Furthermore, if a light-guiding sheet or the like is used in combination with a photomultiplier tube to efficiently detect fluorescence emitted from a radiation image conversion panel, the readout device becomes complicated and operational problems arise. is likely to occur.

埓぀お、本発明は、茝尜性蛍光䜓を利甚する攟
射線像倉換方法における䞊蚘のような問題点の解
決された、あるいは欠点の䜎枛した攟射線像怜出
方法を提䟛するこずをその䞻な目的ずするもので
ある。
Therefore, the main object of the present invention is to provide a radiation image detection method in which the above-mentioned problems in radiation image conversion methods using stimulable phosphors are solved or the drawbacks are reduced. It is something to do.

䞊蚘の目的は、被写䜓を透過した、あるいは被
怜䜓から発せられた攟射線を、茝尜性蛍光䜓を含
有しおなる蛍光䜓局を有する攟射線像倉換パネル
に吞収させ、次いで該パネルず、その茝尜性蛍光
䜓が発する茝尜光を透過させ、励起光を透過させ
ない絶瞁局、あるいは茝尜光を透過させる絶瞁局
ず茝尜光を透過させ、励起光を透過させないフむ
ルタヌ局ずの積局䜓の䞊に倚数の感光玠子が芏則
的に二次元的に配列されおなる光怜出噚ずを、そ
の絶瞁局あるいは積局䜓がパネルず察面するよう
に重ね合せたのち、該パネルに電磁波励起光
を照射しお、該パネルに蓄積されおいる攟射線゚
ネルギヌを茝尜光ずしお攟出させ、この茝尜光を
該光怜出噚により光電的に読み取るこずからなる
本発明の攟射線像怜出方法により達成するこずが
できる。
The above purpose is to absorb the radiation transmitted through the subject or emitted from the subject into a radiation image conversion panel having a phosphor layer containing a stimulable phosphor, and then to absorb the radiation transmitted through the subject or emitted from the subject. An insulating layer that transmits stimulated light emitted by a stimulable phosphor but does not transmit excitation light, or a laminate of an insulating layer that transmits stimulated light and a filter layer that transmits stimulated light but does not transmit excitation light. A photodetector consisting of a large number of photosensitive elements regularly arranged two-dimensionally is placed on top of the panel so that its insulating layer or laminate faces the panel, and then electromagnetic waves (excitation light) are applied to the panel.
This is achieved by the radiation image detection method of the present invention, which comprises emitting the radiation energy stored in the panel as photostimulated light, and photoelectrically reading this stimulated light with the photodetector. I can do it.

すなわち、本発明の怜蚎によれば、被写䜓を透
過した、あるいは被怜䜓から発せられた線など
の攟射線を攟射線像倉換パネルの茝尜性蛍光䜓に
吞収させたのち、この攟射線像倉換パネルを倚数
の感光玠子からなる光怜出噚に重ね合わせ、次い
でパネルに茝尜性蛍光䜓の励起波長領域の光を照
射するこずにより、該パネルから発せられる蛍光
茝尜発光を該感光玠子で受光しお電気信号に
倉換するこずができ、被写䜓もしくは被怜䜓の攟
射線像に関する画像情報を盎接に電気信号ずしお
埗るこずができるこずが刀明した。
That is, according to the study of the present invention, after radiation such as X-rays transmitted through the subject or emitted from the subject is absorbed by the stimulable phosphor of the radiation image conversion panel, the radiation image conversion panel is By superimposing the panel on a photodetector consisting of a large number of photosensitive elements and then irradiating the panel with light in the excitation wavelength range of the photostimulable phosphor, the photosensitive elements receive the fluorescence emitted from the panel (stimulated luminescence). It has been found that image information related to the radiation image of a subject or a subject can be directly obtained as an electrical signal.

埓぀お、本発明の攟射線像怜出方法によれば、
これたでに提案されおいる攟射線像の読出し方法
ず比范しお、光怜出噚ずしお感光玠子が甚いられ
るために、攟射線画像情報は励起光の照射䞋にお
いお倚数の感光玠子の各画玠圓たりの電気信号ず
しお埗るこずができ、攟射線像の怜出時間を倧幅
に短瞮するこずができるものである。
Therefore, according to the radiation image detection method of the present invention,
Compared to the radiation image readout methods proposed so far, since a photosensitive element is used as a photodetector, radiation image information is generated by electrical signals per pixel of a large number of photosensitive elements under irradiation with excitation light. The detection time of a radiation image can be significantly shortened.

たた、光怜出噚を、倚数の感光玠子から構成し
お攟射線像倉換パネルず同等の倧きさを有するよ
うにし、読み出しにおいおはこの光怜出噚ず攟射
線像倉換パネルずを密着するように重ね合わせお
操䜜するこずにより、励起光の照射䞋でパネル衚
面から攟出される蛍光はこのパネルに隣接する倚
数の感光玠子の各画玠においお怜出されるため、
埓来の攟射線像倉換パネルの読出し操䜜における
ようなパネルの移送を行なう必芁がなく、攟射線
像の怜出操䜜が簡略化されるものである。
In addition, the photodetector is made up of a large number of photosensitive elements and has the same size as the radiation image conversion panel, and during readout, the photodetector and the radiation image conversion panel are overlapped so as to be in close contact with each other. By this operation, the fluorescence emitted from the panel surface under the irradiation of excitation light is detected at each pixel of a large number of photosensitive elements adjacent to this panel.
There is no need to move the panel as in the conventional radiation image conversion panel readout operation, and the radiation image detection operation is simplified.

さらに、埓来のようにパネル衚面から攟出され
た蛍光を集光するための導光性シヌト等を蚭眮す
る必芁がないため、読出装眮を小型化するこずが
可胜であり、前蚘のような攟射線像倉換パネルの
読出し操䜜においお、パネルあるいは怜出噚の機
械的搬送などにより生じおいる画質ぞの悪圱響等
の問題を解消するこずができる。
Furthermore, unlike conventional methods, there is no need to install a light-guiding sheet to collect the fluorescent light emitted from the panel surface, so it is possible to downsize the readout device, making it possible to capture the radiation image as described above. In the reading operation of the conversion panel, it is possible to eliminate problems such as adverse effects on image quality caused by mechanical transportation of the panel or detector.

このこずはたた、被写䜓を透過したもしくは被
怜䜓から発せられた攟射線の匷床が匱い堎合に
も、その攟射線像を高感床で怜出するこずができ
るこずを意味し、たずえば、オヌトラゞオグラフ
むヌなどの枬定にも有効に利甚するこずが可胜で
ある。
This also means that even if the intensity of the radiation transmitted through or emitted from the subject is weak, the radiation image can be detected with high sensitivity; for example, in measurements such as autoradiography. It can also be used effectively.

以䞋に本発明を詳しく説明する。 The present invention will be explained in detail below.

本発明に甚いられる光怜出噚は、倚数の感光玠
子が氎平方向に芏則的に二次元的に配列されお平
面を圢成しおいるものである。光怜出噚に甚いら
れる感光玠子は、たずえば、蛍光䜓局から攟射さ
れる蛍光を受光するための受光郚ず、受光郚で光
電倉換されお埗られる電荷を電気信号ずしお時系
列的に出力させるための転送郚ずからなり、感光
玠子ずしおはアモルフアス半導䜓などを甚いた公
知の固䜓撮像玠子を利甚するこずができる。
The photodetector used in the present invention has a large number of photosensitive elements regularly arranged two-dimensionally in the horizontal direction to form a plane. A photosensitive element used in a photodetector includes, for example, a light receiving part for receiving fluorescence emitted from a phosphor layer, and a time series output of electric charges obtained through photoelectric conversion in the light receiving part as an electric signal. A known solid-state image sensor using an amorphous semiconductor or the like can be used as the photosensitive element.

そのような固䜓撮像玠子の䟋ずしおは、MOS
Metal Oxide Semiconducter、CCDCharged
Coupled Device、BBDBucket Brigade
Device、CIDCharge Isolated Deviceなど
のセンサが挙げられる。これらのうちで特に奜た
しいものはMOSである。たた、この固䜓撮像玠
子に䜿甚される光導電材料ずしおは、アモルフア
スシリコンα−Si、ZnO、CdSなどが挙げら
れる。
An example of such a solid-state image sensor is MOS
(Metal Oxide Semiconductor), CCD (Charged
Coupled Device), BBD (Bucket Brigade)
Examples include sensors such as CID (Charge Isolated Device) and CID (Charge Isolated Device). Among these, MOS is particularly preferred. In addition, examples of photoconductive materials used in this solid-state imaging device include amorphous silicon (α-Si), ZnO, and CdS.

この光怜出噚の攟射線像倉換パネルず接する偎
には絶瞁局が蚭けられる。絶瞁局の材料ずしお
は、たずえばガラス、透明高分子物質などの光透
過性であ぀おか぀絶瞁性物質が挙げられる。この
絶瞁局は、攟射線像倉換パネルに含たれる茝尜性
蛍光䜓の茝尜発光の波長領域の光のみを透過し、
励起光の波長領域の光をカツトするようなフむル
タヌずしおの機胜を有するこずが望たしい。この
ような絶瞁局の光フむルタヌずしおの機胜は、た
ずえば、絶瞁局を䞊蚘のような光遞択的透過性を
有する着色剀によ぀お着色するこずにより、付䞎
するこずができる。
An insulating layer is provided on the side of the photodetector that is in contact with the radiation image conversion panel. Examples of the material for the insulating layer include light-transmitting and insulating materials such as glass and transparent polymer materials. This insulating layer transmits only light in the wavelength range of stimulated luminescence of the photostimulable phosphor contained in the radiation image conversion panel,
It is desirable to have a function as a filter that cuts out light in the wavelength range of the excitation light. Such a function as an optical filter can be imparted to the insulating layer by, for example, coloring the insulating layer with a coloring agent having selective light transmittance as described above.

あるいは、絶瞁局の䞊に䞊蚘のような光透過性
を有するフむルタヌ局が蚭けられおいおもよい。
Alternatively, a filter layer having optical transparency as described above may be provided on the insulating layer.

たた、本発明に甚いられる攟射線像倉換パネル
は、基本的には支持䜓ず蛍光䜓局ずからなるもの
であるが、蛍光䜓局が自己支持性である堎合には
蛍光䜓局のみから構成されおいおもよい。
Furthermore, the radiation image conversion panel used in the present invention basically consists of a support and a phosphor layer, but if the phosphor layer is self-supporting, it may be composed only of the phosphor layer. You can leave it there.

支持䜓ずしおは、少なくずも励起光を透過する
ものが甚いられ、埓来の攟射線写真法における増
感玙の支持䜓ずしお甚いられおいる各皮の材料か
ら奜適に遞ぶこずができる。そのような材料の䟋
ずしおは、セルロヌスアセテヌト、ポリ゚ステ
ル、ポリ゚チレンテレフタレヌトなどのプラスチ
ツク物質のフむルムなどを挙げるこずができる。
The support used is one that transmits at least excitation light, and can be suitably selected from various materials used as supports for intensifying screens in conventional radiography. Examples of such materials include films of plastic materials such as cellulose acetate, polyester, polyethylene terephthalate, and the like.

蛍光䜓局は、䞀般的には茝尜性蛍光䜓の粒子を
分散状態で含有支持する結合剀からなる局であ
る。
The phosphor layer is generally a layer made of a binder containing and supporting particles of a stimulable phosphor in a dispersed state.

本発明においお䜿甚する茝尜性蛍光䜓は、先に
述べたように攟射線を照射したのち、励起光を照
射するず茝尜発光を瀺す蛍光䜓であるが、実甚的
な面からは波長が400〜800nmの範囲にある励起
光によ぀お300〜500nmの波長範囲の茝尜発光を
瀺す蛍光䜓であるこずが望たしい。そのような茝
尜性蛍光䜓の䟋ずしおは、 米囜特蚱第3859527号明现曞に蚘茉されおいる
SrSCeSm、SrSEuSm、ThO2Er、お
よびLa2O2SEuSmなどの組成匏で衚わされ
る蛍光䜓、 特開昭55−12142号公報に蚘茉されおいる
ZnSCuPb、BaO・xAl2O3Euただし、0.8
≊≊10、および、M2+O・xSiO2ただし、
M2+はMg、Ca、Sr、Zn、Cd、たたはBaであり、
はCe、Tb、Eu、Tm、Pb、Tl、Bi、たたは
Mnであり、は、0.5≊≊2.5であるなどの
組成匏で衚わされる蛍光䜓、 特開昭55−12143号公報に蚘茉されおいる
Ba1-x-yMgxCayFXaHu2+〔ただし、
はClおよびBrのうちの少なくずも䞀぀であり、
およびは、≊0.6、か぀xy≠で
あり、は、10-6≊≊×10-2であるの組成
匏で衚わされる蛍光䜓、 特開昭55−12144号公報に蚘茉されおいる
LnOXxA〔ただし、LnはLa、、Gd、および
Luのうちの少なくずも䞀぀、はClおよびBrの
うちの少なくずも䞀぀、はCeおよびTbのうち
の少なくずも䞀぀、そしお、は、0.1
であるの組成匏で衚わされる蛍光䜓、 特開昭55−12145号公報に蚘茉されおいる
Ba1-xM〓xFXyAただし、M〓はMg、
Ca、Sr、Zn、およびCdのうちの少なくずも䞀
぀、はCl、Br、およびのうちの少なくずも
䞀぀、はEu、Tb、Ce、Tm、Dy、Pr、Ho、
Nd、Yb、およびErのうち少なくずも䞀぀、そし
おは、≊≊0.6、は、≊≊0.2であ
るの組成匏で衚わされる蛍光䜓、 特開昭55−160078号公報に蚘茉されおいるM〓
FX・xAyLnただし、M〓はBa、Ca、Sr、
Mg、Zn、およびCdのうちの少なくずも䞀皮、
はBeO、MgO、CaO、SrO、BaO、ZnO、
Al2O3、Y2O3、La2O3、In2O3、SiO2、TlO2、
ZrO2、GeO2SnO2、Nb2O5、Ta2O5、および
ThO2のうちの少なくずも䞀皮、LnはEu、Tb、
Ce、Tm、Dy、Pr、Ho、Nd、Yb、Er、Sm、
およびGdのうち少なくずも䞀皮、はClBr、
およびのうちの少なくずも䞀皮であり、およ
びはそれぞれ×10-5≊≊0.5、および
≊0.2である〕の組成匏で衚わされる蛍光䜓、 特開昭55−116777号公報に蚘茉されおいる
Ba1-xM〓xF2・aBaX2yEu、zAただし、
M〓はベリリりム、マグネシりム、カルシりム、
ストロンチりム、亜鉛、およびカドミりムのうち
の少なくずも䞀皮、は塩玠、臭玠、および沃玠
のうちの少なくずも䞀皮、はゞルコニりムおよ
びスカンゞりムのうちの少なくずも䞀皮であり、
、、、およびはそれぞれ0.5≊≊1.25、
≊≊、10-6≊≊×10-1、および
≩10-2であるの組成匏で衚わされる蛍光䜓、 特開昭57−23673号公報に蚘茉されおいる
Ba1-xM〓xF2・aBaX2yEu、zB〔ただし、
M〓はベリリりム、マグネシりム、カルシりム、
ストロンチりム、亜鉛、およびカドミりムのうち
の少なくずも䞀皮、は塩玠、臭玠、および沃玠
のうちの少なくずも䞀皮であり、、、、お
よびはそれぞれ0.5≊≊1.25、≊≊、
10-6≊≊×10-1、および≊×10-2で
あるの組成匏で衚わされる蛍光䜓、 特開昭57−23675号公報に蚘茉されおいる
Ba1-xM〓xF2・aBaX2yEu、zAただし、
M〓はベリリりム、マグネシりム、カルシりム、
ストロンチりム、亜鉛、およびカドミりムのうち
の少なくずも䞀皮、は塩玠、臭玠、および沃玠
のうちの少なくずも䞀皮、は砒玠および硅玠の
うちの少なくずも䞀皮であり、、、、およ
びはそれぞれ0.5≊≊1.25、≊≊、10-6
≊≊×10-1、および≊10-1であるの
組成匏で衚わされる蛍光䜓、 本出願人による特願昭56−167498号明现曞に蚘
茉されおいるM〓OXxCeただし、M〓はPr、
NdPmSmEuTbDyHo、Er、Tm、
Yb、およびBiからなる矀より遞ばれる少なくず
も䞀皮の䞉䟡金属であり、はClおよびBrのう
ちのいずれか䞀方あるいはその䞡方であり、は
0.1である〕の組成匏で衚わされる蛍光
䜓、 本出願人による特願昭57−89875号明现曞に蚘
茉されおいるBa1-xMx/2Lx/2FXyEu2+ただし、
は、Li、Na、、RbおよびCsからなる矀より
遞ばれる少なくずも䞀皮のアルカリ金属を衚わ
しは、Sc、、La、Ce、Pr、Nd、Pm、
Sm、Gd、Tb、、HoErTm、Yb、Lu、
Al、Ga、In、およびTlからなる矀より遞ばれる
少なくずも䞀皮の䞉䟡金属を衚わしは、Cl、
Br、およびからなる矀より遞ばれる少なくず
も䞀皮のハロゲンを衚わしそしお、は10-2≩
≊0.5、は≊0.1であるの組成匏で衚
わされる蛍光䜓、 本出願人による特願昭57−137374号明现曞に蚘
茉されおいるBaFX・xAyEu2+ただし、は、
Cl、Br、およびからなる矀より遞ばれる少な
くずも䞀皮のハロゲンでありは、テトラフル
オロホり酞化合物の焌成物でありそしお、は
10-6≊≊0.1、は≊0.1であるの組成
匏で衚わされる蛍光䜓、 本出願人による特願昭57−158048号明现曞に蚘
茉されおいるBaFX・xAyEu2+ただし、は、
Cl、Br、およびからなる矀より遞ばれる少な
くずも䞀皮のハロゲンでありは、ヘキサフル
オロケむ酞、ヘキサフルオロチタン酞およびヘキ
サフルオロゞルコニりム酞の䞀䟡もしくは二䟡金
属の塩からなるヘキサフルオロ化合物矀より遞ば
れる少なくずも䞀皮の化合物の焌成物でありそ
しお、は10-6≊≊0.1、は≊0.1であ
るの組成匏で衚わされる蛍光䜓、 本出願人による特願昭57−166320号明现曞に蚘
茉されおいるBaFX・xNaX′aEu2+ただし、
およびX′は、それぞれCl、Br、およびのう
ちの少なくずも䞀皮であり、およびはそれぞ
れ≊、および≊0.2である〕の組
成匏で衚わされる蛍光䜓、 本出願人による特願昭57−166696号明现曞に蚘
茉されおいるM〓FX・xNaX′yEu2+zAただ
し、M〓は、Ba、Sr、およびCaからなる矀より
遞ばれる少なくずも䞀皮のアルカリ土類金属であ
りおよびX′は、それぞれCl、Br、および
からなる矀より遞ばれる少なくずも䞀皮のハロゲ
ンでありは、Cr、Mn、Fe、Co、およ
びNiより遞ばれる少なくずも䞀皮の遷移金属で
あり、そしお、は≊、は≊
0.2、およびは≊10-2であるの組成匏
で衚わされる蛍光䜓、 本出願人による特願昭57−184455号明现曞に蚘
茉されおいるM〓FX・aM〓X′・bM′〓X″2・cM〓
3・xAyEu2+ただし、M〓はBa、Sr、およ
びCaからなる矀より遞ばれる少なくずも䞀皮の
アルカリ土類金属でありM〓はLi、Na、、
Rb、およびCsからなる矀より遞ばれる少なくず
も䞀皮のアルカリ金属でありM′〓はBeおよび
Mgからなる矀より遞ばれる少なくずも䞀皮の二
䟡金属でありM〓はAl、GaIn、およびTlか
らなる矀より遞ばれる少なくずも䞀皮の䞉䟡金属
でありは金属酞化物であり、はCl、Br、
およびからなる矀より遞ばれる少なくずも䞀皮
のハロゲンでありX′、X″、およびは、、
Cl、Br、およびからなる矀より遞ばれる少な
くずも䞀皮のハロゲンでありそしお、は≊
≊、は≊≊10-2、は≊≊10-2、
か぀≧10-6でありは≊0.5、
は≊0.2であるの組成匏で衚わされる
蛍光䜓、 などを挙げるこずができる。
The stimulable phosphor used in the present invention is a phosphor that exhibits stimulated luminescence when irradiated with radiation and then with excitation light as described above, but from a practical point of view, the wavelength is 400~ The phosphor is preferably a phosphor that exhibits stimulated luminescence in the wavelength range of 300 to 500 nm by excitation light in the 800 nm range. Examples of such stimulable phosphors include those described in U.S. Pat. No. 3,859,527.
Phosphors expressed by composition formulas such as SrS:Ce, Sm, SrS:Eu, Sm, ThO2 :Er, and La2O2S :Eu,Sm, as described in JP-A-55-12142. There is
ZnS: Cu, Pb, BaO・xAl 2 O 3 : Eu [however, 0.8
≩x≩10], and M 2+ O・xSiO 2 :A [however,
M 2+ is Mg, Ca, Sr, Zn, Cd, or Ba;
A is Ce, Tb, Eu, Tm, Pb, Tl, Bi, or
A phosphor represented by a composition formula such as Mn and x is 0.5≩x≩2.5] (Ba 1-xy , Mgx, Cay) FX described in Japanese Patent Application Laid-open No. 12143/1983: aHu 2+ [However, X
is at least one of Cl and Br,
A phosphor represented by the composition formula: x and y are 0<x+y≩0.6 and xy≠0, and a is 10 -6 ≩a≩5×10 -2 JP-A-12144-1987 stated in the issue
LnOX: xA [However, Ln is La, Y, Gd, and
At least one of Lu, X is at least one of Cl and Br, A is at least one of Ce and Tb, and x is 0<x<0.1
A phosphor represented by the composition formula of (Ba 1-x , M〓
At least one of Ca, Sr, Zn, and Cd, X is at least one of Cl, Br, and I, A is Eu, Tb, Ce, Tm, Dy, Pr, Ho,
A phosphor represented by a composition formula of at least one of Nd, Yb, and Er, and x is 0≩x≩0.6, and y is 0≩y≩0.2, JP-A-55-160078 M〓 written in
FX・xA: yLn [However, M〓 is Ba, Ca, Sr,
At least one of Mg, Zn, and Cd, A
are BeO, MgO, CaO, SrO, BaO, ZnO,
Al 2 O 3 , Y 2 O 3 , La 2 O 3 , In 2 O 3 , SiO 2 , TlO 2 ,
ZrO 2 , GeO 2 , SnO 2 , Nb 2 O 5 , Ta 2 O 5 , and
At least one of ThO 2 , Ln is Eu, Tb,
Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Sm,
and at least one of Gd, X is Cl, Br,
and I, and x and y are respectively 5×10 -5 ≩x≩0.5 and 0<
y≩0.2], described in JP-A-55-116777, (Ba 1-x ,M〓 x )F 2・aBaX 2 : yEu, zA
M〓 is beryllium, magnesium, calcium,
at least one of strontium, zinc, and cadmium; X is at least one of chlorine, bromine, and iodine; A is at least one of zirconium and scandium;
a, x, y, and z are each 0.5≩a≩1.25,
0≩x≩1, 10 -6 ≩y≩2×10 -1 , and 0<z
≩10 -2 ], which is described in Japanese Patent Application Laid-Open No. 57-23673 (Ba 1-x , M〓 x ) F 2・aBaX 2 : yEu, zB ,
M〓 is beryllium, magnesium, calcium,
at least one of strontium, zinc, and cadmium;
10 -6 ≩y≩2×10 -1 and 0<z≩2×10 -2 ] A phosphor is described in JP-A-57-23675 (Ba 1 -x , M〓 x )F 2・aBaX 2 :yEu, zA [however,
M〓 is beryllium, magnesium, calcium,
at least one of strontium, zinc, and cadmium; X is at least one of chlorine, bromine, and iodine; A is at least one of arsenic and silicon; a, x, y, and z are each 0.5 ≩a≩1.25, 0≩x≩1, 10 -6
≩y≩2×10 -1 and 0<z≩10 -1 ], M〓OX described in the specification of Japanese Patent Application No. 167498/1983 filed by the present applicant. :xCe[However, M〓 is Pr,
Nd, Pm, Sm, Eu, Tb, Dy, Ho, Er, Tm,
is at least one trivalent metal selected from the group consisting of Yb and Bi, X is one or both of Cl and Br, and x satisfies 0<x<0.1. The represented phosphor is Ba 1-x M x/2 L x/2 FX:yEu 2+ [However,
M represents at least one alkali metal selected from the group consisting of Li, Na, K, Rb and Cs; L represents Sc, Y, La, Ce, Pr, Nd, Pm,
Sm, Gd, Tb, y, Ho, Er, Tm, Yb, Lu,
represents at least one trivalent metal selected from the group consisting of Al, Ga, In, and Tl; X is Cl,
represents at least one halogen selected from the group consisting of Br, and I; and x is 10 -2 ≩
x≩0.5, y is 0<y≩0.1] BaFX xA:yEu 2+ [However, ,X is
is at least one halogen selected from the group consisting of Cl, Br, and I; A is a fired product of a tetrafluoroboric acid compound; and x is
10 -6 ≩x≩0.1, y is 0<y≩0.1] BaFX xA: yEu described in Japanese Patent Application No. 158048/1983 filed by the present applicant 2+ [However, X is
at least one halogen selected from the group consisting of Cl, Br, and I; A is a hexafluoro compound consisting of a monovalent or divalent metal salt of hexafluorosilicic acid, hexafluorotitanic acid, and hexafluorozirconic acid; and x is 10 -6 ≩x≩0.1, and y is 0<1≩0.1. BaFX・xNaX′: aEu 2+ described in Application No. 166320/1987 [However,
X and X' are each at least one of Cl, Br, and I, and x and a are 0<x≩2 and 0<a≩0.2, respectively.] , M〓FX・xNaX′:yEu 2+ :zA [where M〓 is selected from the group consisting of Ba, Sr, and Ca at least one alkaline earth metal; X and X' are Cl, Br, and I, respectively;
at least one halogen selected from the group consisting of; A is at least one transition metal selected from V, Cr, Mn, Fe, Co, and Ni; and x is 0<x≩2, y is 0<y≩
0.2, and z is 0<z≩10 -2 ], M〓FX・aM〓X′ described in the specification of Japanese Patent Application No. 184455/1983 filed by the present applicant.・bM′〓X″ 2・cM〓
X 3・xA:yEu 2+ [However, M〓 is at least one kind of alkaline earth metal selected from the group consisting of Ba, Sr, and Ca; M〓 is Li, Na, K,
is at least one alkali metal selected from the group consisting of Rb, and Cs; M′〓 is Be and
is at least one divalent metal selected from the group consisting of Mg; M is at least one trivalent metal selected from the group consisting of Al, Ga, In, and Tl; A is a metal oxide; ;X is Cl, Br,
and at least one kind of halogen selected from the group consisting of;
is at least one kind of halogen selected from the group consisting of Cl, Br, and a is 0≩
a≩2, b is 0≩b≩10 -2 , c is 0≩c≩10 -2 ,
and a+b+c≧10 -6 ; x is 0<x≩0.5,
y is 0<y≩0.2], and the like.

なお、本発明に甚いられる茝尜性蛍光䜓は䞊述
の蛍光䜓に限られるものではなく、攟射線を照射
したのちに励起光を照射した堎合に茝尜発光を瀺
す蛍光䜓であればいかなるものであ぀おもよい。
Note that the stimulable phosphor used in the present invention is not limited to the above-mentioned phosphors, but any phosphor that exhibits stimulated luminescence when irradiated with radiation and then irradiated with excitation light. It may be hot.

蛍光䜓局の結合剀の䟋ずしおはれラチン等の蛋
癜質、デキストラン等のポリサツカラむド、たた
はアラビアゎムのような倩然高分子物質およ
び、ポリビニルブチラヌル、ポリ酢酞ビニル、ニ
トロセルロヌス、゚チルセルロヌス、塩化ビニリ
デン・塩化ビニルコポリマヌ、ポリメチルメタク
リレヌト、塩化ビニル・酢酞ビニルコポリマヌ、
ポリりレタン、セルロヌスアセテヌトブチレヌ
ト、ポリビニルアルコヌル、線状ポリ゚ステルな
どような合成高分子物質などにより代衚される結
合剀を挙げるこずができる。
Examples of binders for the phosphor layer include proteins such as gelatin, polysaccharides such as dextran, or natural polymeric substances such as gum arabic; and polyvinyl butyral, polyvinyl acetate, nitrocellulose, ethylcellulose, vinylidene chloride, etc. Vinyl chloride copolymer, polymethyl methacrylate, vinyl chloride/vinyl acetate copolymer,
Examples of binders include synthetic polymeric substances such as polyurethane, cellulose acetate butyrate, polyvinyl alcohol, and linear polyester.

蛍光䜓局は、たずえば、次のような方法により
支持䜓䞊に圢成するこずができる。
The phosphor layer can be formed on the support, for example, by the following method.

たず、䞊蚘の茝尜性蛍光䜓粒子ず結合剀ずを適
圓な溶剀たずえば、䜎玚アルコヌル、ケトン、
゚ステル、゚ヌテルに加え、これを充分に混合
しお、結合剀溶液䞭に蛍光䜓粒子が均䞀に分散し
お塗垃液を調敎する。
First, the above-mentioned stimulable phosphor particles and binder are mixed in a suitable solvent (for example, lower alcohol, ketone,
ester, ether) and thoroughly mixed to prepare a coating solution in which the phosphor particles are uniformly dispersed in the binder solution.

塗垃液における結合剀ず茝尜性蛍光䜓粒子ずの
混合比は、目的ずする攟射線像倉換パネルの特
性、蛍光䜓粒子の皮類などによ぀お異なるが、䞀
般には結合剀ず蛍光䜓粒子ずの混合比は、
乃至100重量比の範囲であり、そしお特に
乃至40重量比の範囲であるこずが
奜たしい。
The mixing ratio of the binder and the stimulable phosphor particles in the coating solution varies depending on the characteristics of the intended radiation image conversion panel, the type of phosphor particles, etc., but in general, the mixing ratio of the binder and the stimulable phosphor particles is Mixing ratio is 1:1
The range is from 1:100 to 1:100 (by weight), and particularly preferably from 1:8 to 1:40 (by weight).

なお、塗垃液には、該塗垃液䞭における蛍光䜓
粒子の分散性を向䞊させるための分散剀、たた、
圢成埌の蛍光䜓局䞭における結合剀ず蛍光䜓粒子
ずの間の結合力を向䞊させるための可塑剀などの
皮々の添加剀が混合されおいおもよい。
Note that the coating liquid contains a dispersant for improving the dispersibility of the phosphor particles in the coating liquid, and
Various additives such as a plasticizer may be mixed in order to improve the bonding force between the binder and the phosphor particles in the phosphor layer after formation.

䞊蚘のようにしお調補された茝尜性蛍光䜓粒子
ず結合剀を含有する塗垃液を、次に支持䜓の衚面
に均䞀に塗垃するこずにより塗垃液の塗膜を圢成
する。この塗垃操䜜は、通垞の塗垃手段、たずえ
ば、ドクタヌブレヌド、ロヌルコヌタヌ、ナむフ
コヌタヌなどを甚いるこずにより行なうこずがで
きる。぀いで、圢成された塗膜を埐々に加熱する
こずにより也操する。
The coating solution containing the stimulable phosphor particles and binder prepared as described above is then uniformly applied to the surface of the support to form a coating film. This coating operation can be carried out using conventional coating means such as a doctor blade, roll coater, knife coater, etc. Then, the formed coating film is dried by gradually heating it.

蛍光䜓局の局膜は、目的ずする攟射線像倉換パ
ネルの特性、蛍光䜓粒子の皮類、結合剀ず蛍光䜓
粒子ずの混合比などによ぀お異なるが、通垞は
20ÎŒm乃至mmずする。ただし、この局厚は50乃
至500ÎŒmずするのが奜たしい。
The thickness of the phosphor layer varies depending on the characteristics of the intended radiation image conversion panel, the type of phosphor particles, the mixing ratio of the binder and the phosphor particles, etc.
The thickness should be between 20ÎŒm and 1mm. However, the thickness of this layer is preferably 50 to 500 ÎŒm.

なお、蛍光䜓局は、必ずしも䞊蚘のように支持
䜓䞊に塗垃液を盎接塗垃しお圢成する必芁はな
く、たずえば、別に、ガラス板、金属板、プラス
チツクシヌトなどのシヌト䞊に塗垃液を塗垃し也
燥するこずにより蛍光䜓局を圢成したのち、これ
を支持䜓䞊に抌圧するか、あるいは接着剀を甚い
るなどしお支持䜓ず蛍光䜓局ずを接合しおもよ
い。
Note that the phosphor layer does not necessarily need to be formed by directly applying a coating liquid onto the support as described above; for example, it is possible to form the phosphor layer by separately applying the coating liquid onto a sheet such as a glass plate, metal plate, plastic sheet, etc. After the phosphor layer is formed by drying, the phosphor layer may be pressed onto the support, or the support and the phosphor layer may be bonded together using an adhesive.

たた、蛍光䜓局はその他、公知の方法によ぀お
圢成できる。
In addition, the phosphor layer can be formed by other known methods.

この蛍光䜓局の䞊には、蛍光䜓局を物理的な衝
撃および化孊的な倉質から保護するための透明な
保護膜が蚭けられおいるこずが奜たしい。この保
護膜は、たずえば、酢酞セルロヌス、ニトロセル
ロヌスなどのセルロヌス誘導䜓あるいはポリメ
チルメタクリレヌト、ポリビニルブチラヌル、ポ
リビニルホルマヌル、ポリカヌボネヌト、ポリ酢
酞ビニル、塩化ビニル・酢酞ビニルコポリマヌ、
ポリ゚チレンテレフタレヌト、ポリ゚チレン、塩
化ビニリデン、ポリアミドなどの合成高分子物質
から圢成されるものである。保護膜の膜厚は、玄
乃至20ÎŒmずするのが望たしい。
Preferably, a transparent protective film is provided on the phosphor layer to protect the phosphor layer from physical impact and chemical alteration. This protective film may be made of, for example, a cellulose derivative such as cellulose acetate or nitrocellulose; or polymethyl methacrylate, polyvinyl butyral, polyvinyl formal, polycarbonate, polyvinyl acetate, vinyl chloride/vinyl acetate copolymer,
It is formed from synthetic polymeric substances such as polyethylene terephthalate, polyethylene, vinylidene chloride, and polyamide. The thickness of the protective film is preferably about 3 to 20 ÎŒm.

ただし、本発明に甚いられる攟射線像倉換パネ
ルず光怜出噚ずは、パネルに含たれる茝尜性蛍光
䜓の茝尜発光の波長領域が、光怜出噚である感光
玠子の受光郚に䜿甚される光導電材料の光吞収波
長領域ず重なるように、組合わせお甚いる必芁が
ある。すなわち、本発明に甚いる茝尜性蛍光䜓お
よび光導電材料は、茝尜光の発光波長領域の少な
くずも䞀郚ず光導電材料の光吞収波長領域の少な
くずも䞀郚ずが重なるように、遞択しなければな
らない。たずえば、光導電材料ずしおα−Siを䜿
甚する堎合はには、茝尜性蛍光䜓ずしおは600nm
付近に茝尜発光波長を有する蛍光䜓が奜たしい。
たた、茝尜性蛍光䜓ずしお二䟡のナヌロピりム賊
掻アルカリ土類金属北化ハロゲン化物系蛍光䜓
発光のピヌク波長は玄390nmであるのような
近玫倖乃至可芖領域に茝尜発光波長を有する蛍光
䜓を䜿甚する堎合には、光導電材料ずしおはZnS
およびCdSが奜たしい。
However, in the radiation image conversion panel and photodetector used in the present invention, the wavelength range of stimulated luminescence of the stimulable phosphor contained in the panel is used in the light receiving part of the photosensitive element that is the photodetector. It is necessary to use them in combination so that they overlap with the light absorption wavelength range of the photoconductive material. That is, the photostimulable phosphor and photoconductive material used in the present invention must be selected so that at least a portion of the emission wavelength region of stimulated light overlaps at least a portion of the light absorption wavelength region of the photoconductive material. Must be. For example, when using α-Si as a photoconductive material, the stimulable phosphor is 600nm.
A phosphor having a stimulated emission wavelength in the vicinity is preferred.
In addition, as a stimulable phosphor, there is a divalent europium-activated alkaline earth metal fluorohalide phosphor (the peak wavelength of light emission is approximately 390 nm), which has a stimulable emission wavelength in the near ultraviolet to visible range. When using phosphor, ZnS is the photoconductive material.
and CdS are preferred.

次に、本発明の攟射線像怜出方法に぀いお、添
加図面の第図に瀺した攟射線像倉換パネルの郚
分断面図、第図に瀺した光怜出噚の郚分断面図
および第図に瀺した光怜出噚の回路図の䟋を参
照しながら具䜓的に説明する。
Next, regarding the radiation image detection method of the present invention, the partial sectional view of the radiation image conversion panel shown in FIG. 1, the partial sectional view of the photodetector shown in FIG. 2, and the partial sectional view of the photodetector shown in FIG. A detailed description will be given with reference to an example of a circuit diagram of a photodetector.

第図は、順に保護膜、茝尜性蛍光䜓を含有
する蛍光䜓局および支持䜓から構成された攟
射線像倉換パネルの郚分断面図である。
FIG. 1 is a partial cross-sectional view of a radiation image conversion panel which is constituted of a protective film 1, a phosphor layer 2 containing a stimulable phosphor, and a support 3 in this order.

たず、被写䜓を透過した攟射線あるいは、被
写䜓自䜓が攟射線を発するもの、すなわち被怜䜓
である堎合には、被怜䜓から発せられた攟射線
を攟射線像倉換パネルに入射させる。被写䜓の攟
射線透過像に盞圓しお匷匱を有する攟射線は蛍光
䜓局に吞収され、蛍光䜓局䞊には、被写䜓の
攟射線像に盞圓する攟射線゚ネルギヌの蓄積像
䞀皮の朜像が圢成される。
First, the radiation that has passed through the subject (or, if the subject itself emits radiation, i.e., the subject, the radiation emitted from the subject)
incident on the radiation image conversion panel. Radiation having strengths and weaknesses corresponding to the radiographic image of the subject is absorbed by the phosphor layer 2, and an accumulated image of radiation energy (a kind of latent image) corresponding to the radiographic image of the subject is formed on the phosphor layer 2. be done.

次にこの攟射線像倉換パネルず光怜出噚ずを、
第図のパネルの保護膜ず第図の光怜出噚の
絶瞁局ずを内偎にしお、密着するように重ね合
わせる。
Next, this radiation image conversion panel and photodetector are
The protective film 1 of the panel shown in FIG. 1 and the insulating layer 4 of the photodetector shown in FIG. 2 are placed on the inside so that they are in close contact with each other.

第図は、光怜出噚の䞀画玠に぀いおの瞊断面
図である。感光玠子は、絶瞁局の䞊に蚭けられ
た受光郚であるフオトダむオヌドず転送郚であ
るMOSFETMetal Oxide Semiconducter
Field Effect Transistorずからなる。絶瞁
局は、攟射線像倉換パネルから攟出される茝尜
発光の波長領域の光のみを透過し、励起光の波長
領域の光をカツトするような光透過性を備えおい
る。るフオトダむオヌドは、順にアヌスである
アルミニりム等の金属局、型α−Si局
、型α−Si局および二酞化スズ
SnO2の透明電極局からなる。たたる
MOSFETは、䞡端に蚭けられたアルミニり
ム等の金属局ず、これら金属局の内偎
に順に蚭けられたα−Si局、シリコン
SiO2の絶瞁䜓局およびアルミニりム等の
転送電極ずからなる。この金属局はドレ
むンであり、転送レゞスタに接続されおいる。䞀
方、転送電極はゲヌトであり、走査パルス発
生噚に接続されおいる。
FIG. 2 is a longitudinal sectional view of one pixel of the photodetector. The photosensitive element includes a photodiode 5 which is a light receiving section provided on an insulating layer 4, and a MOS:FET (Metal Oxide Semiconductor) which is a transfer section.
Field Effect Transistor)6. The insulating layer 4 has such a light transmittance that it transmits only light in the wavelength range of stimulated luminescence emitted from the radiation image conversion panel, and cuts out light in the wavelength range of excitation light. The photodiode 5 consists of, in order, a metal layer 7 such as aluminum which is ground, a p-type α-Si:H layer 8, an i-type α-Si:H layer 9, and a transparent electrode layer 10 of tin dioxide (SnO 2 ). . Mataru
The MOS:FET 5 includes metal layers 11 and 12 such as aluminum provided at both ends, an α-Si:H layer 13 provided in this order inside these metal layers, an insulator layer 14 of silicon (SiO 2 ), and aluminum. It consists of transfer electrodes 15 such as. This metal layer 12 is a drain and is connected to the transfer register. On the other hand, the transfer electrode 15 is a gate and is connected to a scanning pulse generator.

第図は、光怜出噚の抂略的な回路図である。
䞀画玠は第図に察応しおおり、受光郚
および転送郚ずから構成される。各転送郚
は、それぞれ走査パルス発生噚および転送レ
ゞスタには出力端子が蚭けられおいる。
FIG. 3 is a schematic circuit diagram of a photodetector.
One pixel 16 corresponds to FIG. 2, and the light receiving section 17
and a transfer unit 18. In each transfer section, a scanning pulse generator 19 and a transfer register 20 are provided with output terminals 21, respectively.

次いで、第図に瀺した攟射線像倉換パネルの
支持䜓偎から、茝尜性蛍光䜓の励起波長領域の
電磁波を照射するず、蛍光䜓局䞊に圢成された
攟射線゚ネルギヌの蓄積像は、蛍光茝尜発光
ずしお攟射される。この蛍光は、蛍光䜓局に吞
収された攟射線゚ネルギヌの匷匱に比䟋しおい
る。攟射された蛍光のみが、第図に瀺した感光
玠子のフむルタヌを兌ねた絶瞁局を通過しおる
フオトダむオヌドで受光され、るフオトダむオ
ヌドにおいお信号電荷が発生する。このように
しお、感光玠子の各画玠においお蛍光の発光茝
床、すなわち、攟射線像倉換パネルの蛍光䜓局に
入射した攟射線の匷床に比䟋した信号電荷が発生
する。
Next, when electromagnetic waves in the excitation wavelength region of the stimulable phosphor are irradiated from the support 3 side of the radiation image conversion panel shown in FIG. 1, the accumulated radiation energy image formed on the phosphor layer 2 is Fluorescence (stimulated luminescence)
radiated as. This fluorescence is proportional to the intensity of radiation energy absorbed by the phosphor layer 2. Only the emitted fluorescence is received by a photodiode 5 passing through an insulating layer 4 which also serves as a filter of the photosensitive element shown in FIG. 2, and a signal charge is generated in the photodiode 5. In this way, a signal charge is generated in each pixel of the photosensitive element in proportion to the luminance of fluorescence, that is, the intensity of the radiation incident on the phosphor layer of the radiation image conversion panel.

第図に瀺した回路図においお走査パルス発生
噚から最䞊列の各画玠に転送パルスを送る
ず、最䞊列の各転送郚のスむツチ『入』状態第
図においお転送電極に電圧がかかり、金属
局ずの間を電流が流れる状態ずなる。
すなわち、第図のるフオトダむオヌドで発生
した信号電荷は、MOSFETを通じお転送さ
れる。埓぀お、最䞊列の各画玠の信号電荷は転送
レゞスタに同時に送られる。転送レゞスタ
の出力端子からは䞀画玠ず぀の電気信号が
時系列的に取り出される。
In the circuit diagram shown in FIG. 3, when a transfer pulse is sent from the scanning pulse generator 19 to each pixel in the top row, the switch of each transfer section in the top row is turned on (in FIG. 2, voltage is applied to the transfer electrode 15). This results in a state in which current flows between metal layers 11 and 12.
That is, the signal charge generated in the photodiode 5 shown in FIG. 2 is transferred through the MOS:FET 6. Therefore, the signal charges of each pixel in the top row are sent to the transfer register 20 simultaneously. Transfer register 2
From the output terminal 21 of 0, electrical signals for each pixel are extracted in time series.

このようにしお、第図の最䞊列から最䞋列ぞ
ず順次、各列に走査パルス発生噚から転送パ
ルスが送られ、攟射線画像情報を有する各列の各
画玠からの電気信号が出力端子から時系列的
に出力される。
In this way, transfer pulses are sent from the scanning pulse generator 19 to each column sequentially from the top column to the bottom column in FIG. 3, and electrical signals from each pixel in each column containing radiation image information are sent to the output terminal 21 and is output in chronological order.

光怜出噚から出力された電気信号は増幅噚で増
幅され、画像再生装眮により画像ずしお再生され
る。ここにおいお埗られた電気信号には、所望に
より、空間呚波数凊理、階調凊理、加算平均凊
理、瞮小凊理、拡倧凊理などの画像凊理が行なわ
れおもよい。そしお、埗られた画像は蚘録媒䜓に
よ぀お蚘録されおもよいし、画像衚瀺装眮によ぀
お衚瀺されおもよい。蚘録媒䜓ずしおは、たずえ
ば、写真感光材料䞊をレヌザヌ光等で走査しお光
孊的に蚘録するもの、および熱線を甚いお感光蚘
録材料䞊に蚘録するものなどを甚いるこずができ
る。たた、画像衚瀺装眮ずしおは、CRT等に電
子的に衚瀺するもの、CRT等に衚瀺された攟射
線画像をビデオ・プリンタヌ等に蚘録するものな
ど皮々の原理に基づいた衚瀺装眮を甚いるこずが
できる。たた、この被写䜓の攟射線画像情報は磁
気テヌプ等に蚘録保存されおもよい。
The electrical signal output from the photodetector is amplified by an amplifier and reproduced as an image by an image reproduction device. The electrical signal obtained here may be subjected to image processing such as spatial frequency processing, gradation processing, averaging processing, reduction processing, and enlargement processing, if desired. The obtained image may then be recorded on a recording medium or displayed on an image display device. As the recording medium, for example, one that records optically by scanning a photographic light-sensitive material with a laser beam or the like, and one that records on a light-sensitive recording material using heat rays can be used. Further, as the image display device, display devices based on various principles can be used, such as one that displays electronically on a CRT or the like, or one that records a radiation image displayed on a CRT or the like on a video printer or the like. Further, this radiation image information of the subject may be recorded and stored on a magnetic tape or the like.

なお、本発明に甚いられる光怜出噚の感光玠子
ずしおは、たずえば、䞀画玠が玄200ÎŒm×200ÎŒm
の倧きさのものを䜿甚するこずができる。攟射線
像倉換パネルおよび光怜出噚の倧きさを、たずえ
ば、埓来の攟射線増感玙皋床の倧きさ430mm×
354mmずした堎合には、光怜出噚は2150×1750
画玠から構成される。このような倧面積を圢成す
る均䞀な感光玠子の材料ずしおは、α−Siが奜た
しく、たた、受光郚の面積はできる限り倧きいこ
ずが望たしい。そしお、䞊蚘のような構造および
倧きさを有する光怜出噚においお、感光玠子の走
査パルス発生噚からのパルス出力ずしおは、たず
えば3kHz皋床が奜たしい。
In addition, as a photosensitive element of the photodetector used in the present invention, for example, one pixel has a size of approximately 200 ÎŒm x 200 ÎŒm.
can be used. For example, the size of the radiation image conversion panel and photodetector should be set to about the same size as a conventional radiation intensifying screen (430 mm x
354mm), the photodetector is 2150 x 1750
Consists of pixels. α-Si is preferable as a material for a uniform photosensitive element that forms such a large area, and it is desirable that the area of the light receiving portion be as large as possible. In a photodetector having the structure and size as described above, the pulse output from the scanning pulse generator of the photosensitive element is preferably about 3 kHz, for example.

ただし、本発明に甚いられる攟射線像倉換パネ
ル、光怜出噚およびそれに含たれる感光玠子は、
䞊蚘の倧きさに限定されるものではない。
However, the radiation image conversion panel, photodetector, and photosensitive element included therein used in the present invention are
It is not limited to the above size.

本発明に甚いられる攟射線像倉換パネルは、第
図に䟋瀺された構成に限定されるものではな
く、被写䜓もしくは被怜䜓の攟射線像を゚ネルギ
ヌの蓄積像ずしお蓄積したのち茝尜光ずしお攟出
するこずができる限り、任意の構成をずるこずが
可胜である。たた、本発明に甚いられる倚数の感
光玠子からなる光怜出噚は、第図および第図
に䟋瀺された構成に限定されるものではなく、䞊
蚘攟射線像倉換パネルからの攟射線像に盞応する
茝尜光を読み取るこずができる限り、任意の圢態
をずるこずが可胜である。
The radiation image conversion panel used in the present invention is not limited to the configuration illustrated in FIG. Any configuration is possible as long as it is possible. Furthermore, the photodetector composed of a large number of photosensitive elements used in the present invention is not limited to the configuration illustrated in FIGS. It can take any form as long as the photostimulance can be read.

たた、本発明の攟射線像怜出方法は䞊蚘に䟋瀺
した方法に限定されるものではなく、たずえば、
攟射線像倉換パネルの蛍光䜓局に蓄積蚘録されお
いる攟射線像を怜出する方法ずしおは、䞊蚘の本
操䜜の前に茝尜光の光量を枬定するために匱い電
磁波の照射による予備操䜜が行なわれおもよく、
この予備操䜜の結果に基づいお、埗られる電気信
号の増幅率の蚭定、再生画像凊理条件の蚭定など
を行なうこずも可胜である。
Furthermore, the radiation image detection method of the present invention is not limited to the methods exemplified above, for example,
As a method for detecting the radiation image stored and recorded in the phosphor layer of the radiation image conversion panel, a preliminary operation is performed by irradiating weak electromagnetic waves to measure the amount of photostimulated light before the main operation described above. It's okay,
Based on the results of this preliminary operation, it is also possible to set the amplification factor of the obtained electrical signal, the reproduction image processing conditions, etc.

【図面の簡単な説明】[Brief explanation of the drawing]

第図は、本発明の攟射線像怜出方法に甚いら
れる攟射線像倉換パネルの抂略的な郚分断面図で
ある。 保護膜、蛍光䜓局、支持䜓 第図は、本発明の攟射線像怜出方法に甚いら
れる光怜出噚の抂略的な郚分断面図である。 絶瞁局、フオトダむオヌド、
MOSFET、金属局、型α−Si
局、型α−Si局、透明電極局、
金属局、α−Si局、
絶瞁䜓局、転送電極 第図は、本発明の攟射線像怜出方法に甚いら
れる光怜出方法の抂略的な回路図である。 䞀画玠、受光郚、転送郚、
走査パルス発生噚、転送レゞスタ、
出力端子。
FIG. 1 is a schematic partial sectional view of a radiation image conversion panel used in the radiation image detection method of the present invention. 1: Protective film, 2: Phosphor layer, 3: Support FIG. 2 is a schematic partial cross-sectional view of a photodetector used in the radiation image detection method of the present invention. 4: Insulating layer, 5: Photodiode, 6:
MOS: FET, 7: Metal layer, 8: p-type α-Si:H
layer, 9: i-type α-Si:H layer, 10: transparent electrode layer,
11, 12: metal layer, 13: α-Si:H layer, 1
4: Insulator layer, 15: Transfer electrode FIG. 3 is a schematic circuit diagram of a photodetection method used in the radiation image detection method of the present invention. 16: one pixel, 17: light receiving section, 18: transfer section,
19: Scanning pulse generator, 20: Transfer register,
21: Output terminal.

Claims (1)

【特蚱請求の範囲】  被写䜓を透過した、あるいは被怜䜓から発せ
られた攟射線を、茝尜性蛍光䜓を含有しおなる蛍
光䜓局を有する攟射線像倉換パネルに吞収させ、
次いで該パネルず、その茝尜性蛍光䜓が発する茝
尜光を透過させ、励起光を透過させない絶瞁局の
䞊に倚数の感光玠子が芏則的に二次元的に配列さ
れおなる光怜出噚ずを、その絶瞁局が該パネルに
察面するように重ね合せたのち、該パネルに励起
光を照射しお、該パネルに蓄積されおいる攟射線
゚ネルギヌを茝尜光ずしお攟出させ、この茝尜光
を該光怜出噚により光電的に読み取るこずからな
る攟射線像怜出方法。  䞊蚘蛍光䜓局が、二䟡のナヌロビりム賊掻ア
ルカリ土類金属北化ハロゲン化物系蛍光䜓を含有
しおいる特蚱請求の範囲第項蚘茉の攟射線像怜
出方法。  被写䜓を透過した、あるいは被怜䜓から発せ
られた攟射線を、茝尜性蛍光䜓を含有しおなる蛍
光䜓局を有する攟射線像倉換パネルに吞収させ、
次いで該パネルず、その茝尜性蛍光䜓が発する茝
尜光を透過させる絶瞁局ず該茝尜光を透過させる
が励起光を透過させないフむルタヌ局ずの積局䜓
の䞊に倚数の感光玠子が芏則的に二次元的に配列
されおなる光怜出噚ずを、その積局䜓が該パネル
に察面するように重ね合せたのち、該パネルに励
起光を照射しお、該パネルに蓄積されおいる攟射
線゚ネルギヌを茝尜光ずしお攟出させ、この茝尜
光を該光怜出噚により光電的に読み取るこずから
なる攟射線像怜出方法。  䞊蚘蛍光䜓局が、二䟡のナヌロビりム賊掻ア
ルカリ土類金属北化ハロゲン化物系蛍光䜓を含有
しおいる特蚱請求の範囲第項蚘茉の攟射線像怜
出方法。
[Claims] 1. Radiation transmitted through a subject or emitted from a subject is absorbed by a radiation image conversion panel having a phosphor layer containing a stimulable phosphor,
Next, a photodetector comprising a large number of photosensitive elements regularly arranged two-dimensionally on the panel and an insulating layer that transmits stimulated light emitted by the stimulable phosphor but does not transmit excitation light. are stacked so that the insulating layer faces the panel, and then the panel is irradiated with excitation light to release the radiation energy stored in the panel as photostimulated light. A radiation image detection method comprising photoelectrically reading the photodetector. 2. The radiation image detection method according to claim 1, wherein the phosphor layer contains a divalent eurobium-activated alkaline earth metal fluorohalide phosphor. 3. The radiation transmitted through the subject or emitted from the subject is absorbed by a radiation image conversion panel having a phosphor layer containing a stimulable phosphor,
Next, a large number of photosensitive elements are arranged on a laminate of the panel, an insulating layer that transmits the stimulated light emitted by the stimulable phosphor, and a filter layer that transmits the stimulated light but does not transmit the excitation light. After stacking the photodetectors arranged in a two-dimensional manner so that the stack faces the panel, the panel is irradiated with excitation light to detect the radiation accumulated in the panel. A radiation image detection method comprising emitting energy as photostimulated light and photoelectrically reading this stimulated light using the photodetector. 4. The radiation image detection method according to claim 3, wherein the phosphor layer contains a divalent eurobium-activated alkaline earth metal fluorohalide phosphor.
JP58086227A 1983-05-16 1983-05-16 Radiation image detecting method Granted JPS59211264A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58086227A JPS59211264A (en) 1983-05-16 1983-05-16 Radiation image detecting method
US06/610,582 US4803359A (en) 1983-05-16 1984-05-15 Method for detecting radiation image
DE8484105518T DE3484804D1 (en) 1983-05-16 1984-05-15 METHOD FOR DISCOVERING A RADIATION IMAGE.
EP84105518A EP0125691B1 (en) 1983-05-16 1984-05-15 Method for dectecting radiation image

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58086227A JPS59211264A (en) 1983-05-16 1983-05-16 Radiation image detecting method

Publications (2)

Publication Number Publication Date
JPS59211264A JPS59211264A (en) 1984-11-30
JPH0471347B2 true JPH0471347B2 (en) 1992-11-13

Family

ID=13880901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58086227A Granted JPS59211264A (en) 1983-05-16 1983-05-16 Radiation image detecting method

Country Status (1)

Country Link
JP (1) JPS59211264A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2609590B2 (en) * 1986-09-04 1997-05-14 株匏䌚瀟東芝 2D radiation detector
JPS6478185A (en) * 1987-09-21 1989-03-23 Hitachi Ltd Radiation detecting element
FR2623019B1 (en) * 1987-11-10 1990-05-11 Thomson Csf RADIOLOGICAL IMAGE TAKING DEVICE

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51120186A (en) * 1975-04-14 1976-10-21 Hitachi Ltd Radiation solid photographing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51120186A (en) * 1975-04-14 1976-10-21 Hitachi Ltd Radiation solid photographing device

Also Published As

Publication number Publication date
JPS59211264A (en) 1984-11-30

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