JPH0471347B2 - - Google Patents
Info
- Publication number
- JPH0471347B2 JPH0471347B2 JP58086227A JP8622783A JPH0471347B2 JP H0471347 B2 JPH0471347 B2 JP H0471347B2 JP 58086227 A JP58086227 A JP 58086227A JP 8622783 A JP8622783 A JP 8622783A JP H0471347 B2 JPH0471347 B2 JP H0471347B2
- Authority
- JP
- Japan
- Prior art keywords
- radiation image
- panel
- phosphor
- radiation
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005855 radiation Effects 0.000 claims description 102
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 83
- 238000006243 chemical reaction Methods 0.000 claims description 44
- 230000005284 excitation Effects 0.000 claims description 20
- 238000001514 detection method Methods 0.000 claims description 17
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 5
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 5
- 238000000034 method Methods 0.000 description 16
- 238000012546 transfer Methods 0.000 description 16
- 229910052794 bromium Inorganic materials 0.000 description 14
- 239000000460 chlorine Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 229910052801 chlorine Inorganic materials 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000002245 particle Substances 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 239000011230 binding agent Substances 0.000 description 10
- 238000004020 luminiscence type Methods 0.000 description 10
- 229910052791 calcium Inorganic materials 0.000 description 8
- 239000011575 calcium Substances 0.000 description 8
- 229910052740 iodine Inorganic materials 0.000 description 8
- 229910052712 strontium Inorganic materials 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 229910052693 Europium Inorganic materials 0.000 description 6
- 229910052771 Terbium Inorganic materials 0.000 description 6
- 229910052793 cadmium Inorganic materials 0.000 description 6
- 229910052736 halogen Inorganic materials 0.000 description 6
- 150000002367 halogens Chemical class 0.000 description 6
- 229910052749 magnesium Inorganic materials 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- -1 polyethylene terephthalate Polymers 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052684 Cerium Inorganic materials 0.000 description 4
- 229910052779 Neodymium Inorganic materials 0.000 description 4
- 229910052772 Samarium Inorganic materials 0.000 description 4
- 229910052769 Ytterbium Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 241001473992 Abax Species 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 3
- 229910052689 Holmium Inorganic materials 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 229910052775 Thulium Inorganic materials 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000002601 radiography Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 3
- 229910052716 thallium Inorganic materials 0.000 description 3
- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical compound O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 239000000020 Nitrocellulose Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- 229920002301 cellulose acetate Polymers 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229920001220 nitrocellulos Polymers 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920002689 polyvinyl acetate Polymers 0.000 description 2
- 239000011118 polyvinyl acetate Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 229920002307 Dextran Polymers 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- 229920000084 Gum arabic Polymers 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 241000978776 Senegalia senegal Species 0.000 description 1
- 229910004369 ThO2 Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- FJWGYAHXMCUOOM-QHOUIDNNSA-N [(2s,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6s)-4,5-dinitrooxy-2-(nitrooxymethyl)-6-[(2r,3r,4s,5r,6s)-4,5,6-trinitrooxy-2-(nitrooxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-3,5-dinitrooxy-6-(nitrooxymethyl)oxan-4-yl] nitrate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O)O[C@H]1[C@@H]([C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@@H](CO[N+]([O-])=O)O1)O[N+]([O-])=O)CO[N+](=O)[O-])[C@@H]1[C@@H](CO[N+]([O-])=O)O[C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O FJWGYAHXMCUOOM-QHOUIDNNSA-N 0.000 description 1
- 239000000205 acacia gum Substances 0.000 description 1
- 235000010489 acacia gum Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000000376 autoradiography Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920006217 cellulose acetate butyrate Polymers 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 150000004676 glycans Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- YOYLLRBMGQRFTN-SMCOLXIQSA-N norbuprenorphine Chemical compound C([C@@H](NCC1)[C@]23CC[C@]4([C@H](C3)C(C)(O)C(C)(C)C)OC)C3=CC=C(O)C5=C3[C@@]21[C@H]4O5 YOYLLRBMGQRFTN-SMCOLXIQSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001282 polysaccharide Polymers 0.000 description 1
- 239000005017 polysaccharide Substances 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- DXIGZHYPWYIZLM-UHFFFAOYSA-J tetrafluorozirconium;dihydrofluoride Chemical compound F.F.F[Zr](F)(F)F DXIGZHYPWYIZLM-UHFFFAOYSA-J 0.000 description 1
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Description
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åæ€åºæ¹æ³ã«é¢ãããã®ã§ãããDETAILED DESCRIPTION OF THE INVENTION The present invention relates to a radiation image detection method. More specifically, the present invention relates to a radiation image detection method that utilizes a combination of a radiation image conversion panel and a photosensitive element.
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æ€åºããããšãããªããã®ã§ããã Conventionally, the so-called radiographic method, which combines a radiographic film with an emulsion layer made of a silver salt photosensitive material and an intensifying screen, has been used to detect a radiation image of a subject and obtain it as an image. has been done. As an alternative to the conventional radiographic method mentioned above, for example, US Pat.
2. Description of the Related Art Radiation image conversion methods using photostimulable phosphors are known, such as those described in Japanese Patent Application Laid-Open No. 3859527 and Japanese Patent Application Laid-Open No. 12145/1983. This method is
By making a stimulable phosphor absorb the radiation that has passed through the subject or the radiation emitted from the subject, and then excited this phosphor in a time-series manner with electromagnetic waves (excitation light) such as visible light and infrared rays. This method consists of emitting radiation energy stored in a phosphor as fluorescence (stimulated luminescence) and detecting this fluorescence.
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ããã So far, in the radiation image conversion method, radiation image detection has been carried out using a radiation image conversion panel (stimulable phosphor sheet) containing a stimulable phosphor. It has been proposed to photoelectrically read out the energy image of the image using a radiation image reading device.
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å€è³ªãããã¯ç©ççãªè¡æããä¿è·ããŠããã The radiation image conversion panel used in the radiation image conversion method described above has a basic structure consisting of a support and a phosphor layer provided on one side of the support. Note that a transparent protective film is generally provided on the surface of the phosphor layer opposite to the support (the surface not facing the support) to protect the phosphor layer from chemical deterioration or Protects from physical impact.
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ãã Furthermore, in radiation image reading devices, a photomultiplier tube is usually used as a photodetector, as disclosed in Japanese Patent Laid-Open No. 11395/1983, and the tip of the photomultiplier tube is is provided with a light guide sheet for condensing fluorescence emitted from the surface of the radiation image conversion panel and guiding it to a photodetector.
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ãšãã§ããã In other words, the radiation transmitted through the subject or the radiation emitted from the subject is absorbed by the phosphor layer of the radiation image conversion panel, and a radiation image of the subject or subject is formed on the panel as an image of accumulated radiation energy. Ru. Next, the accumulated image formed on this panel is excited by electromagnetic waves (excitation light) such as visible light and infrared rays in a radiation image reading device, and is emitted as stimulated luminescence (fluorescence). The emitted fluorescence is guided through a light-guiding sheet, then photoelectrically read by a photomultiplier tube and converted into an electrical signal. From the obtained electrical signal,
A radiation image of a subject or a subject can be imaged.
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ãéåžžã«é«ããã®ã§ããã The radiation image conversion method has the advantage that it is possible to obtain a radiation image rich in information with a much lower exposure dose than when conventional radiography is used. Therefore, this radiation image conversion method has a very high utility value especially in direct medical radiography such as X-ray photography for the purpose of medical diagnosis.
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ã¯ç¡èŠã§ããªãæéïŒæ°åç§ïŒãèŠããŠããã However, the reading of the radiation image conversion panel has conventionally been carried out by irradiating the panel with light with a small beam diameter such as a laser beam in time series, that is, by scanning (main scanning or sub-scanning) with the laser beam. This is done by detecting the fluorescence emitted from the panel using a photodetector such as a photomultiplier tube and converting it into an electrical signal, and this readout operation takes a non-negligible amount of time (several tens of seconds). ing.
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ãŠããã In addition, when reading out a radiation image conversion panel, in order to detect the fluorescence emitted in time series from each phosphor particle group on the radiation image conversion panel irradiated with excitation light, it is usually The panel is being moved (sub-scan or main scan).
Therefore, the operation for detecting (reading) the radiation image stored in the radiation image conversion panel has become complicated.
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ããã Therefore, the main object of the present invention is to provide a radiation image detection method in which the above-mentioned problems in radiation image conversion methods using stimulable phosphors are solved or the drawbacks are reduced. It is something to do.
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ã§ããã The above purpose is to absorb the radiation transmitted through the subject or emitted from the subject into a radiation image conversion panel having a phosphor layer containing a stimulable phosphor, and then to absorb the radiation transmitted through the subject or emitted from the subject. An insulating layer that transmits stimulated light emitted by a stimulable phosphor but does not transmit excitation light, or a laminate of an insulating layer that transmits stimulated light and a filter layer that transmits stimulated light but does not transmit excitation light. A photodetector consisting of a large number of photosensitive elements regularly arranged two-dimensionally is placed on top of the panel so that its insulating layer or laminate faces the panel, and then electromagnetic waves (excitation light) are applied to the panel.
This is achieved by the radiation image detection method of the present invention, which comprises emitting the radiation energy stored in the panel as photostimulated light, and photoelectrically reading this stimulated light with the photodetector. I can do it.
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åŸãããšãã§ããããšãå€æããã That is, according to the study of the present invention, after radiation such as X-rays transmitted through the subject or emitted from the subject is absorbed by the stimulable phosphor of the radiation image conversion panel, the radiation image conversion panel is By superimposing the panel on a photodetector consisting of a large number of photosensitive elements and then irradiating the panel with light in the excitation wavelength range of the photostimulable phosphor, the photosensitive elements receive the fluorescence emitted from the panel (stimulated luminescence). It has been found that image information related to the radiation image of a subject or a subject can be directly obtained as an electrical signal.
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ã«ççž®ããããšãã§ãããã®ã§ããã Therefore, according to the radiation image detection method of the present invention,
Compared to the radiation image readout methods proposed so far, since a photosensitive element is used as a photodetector, radiation image information is generated by electrical signals per pixel of a large number of photosensitive elements under irradiation with excitation light. The detection time of a radiation image can be significantly shortened.
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åã®æ€åºæäœãç°¡ç¥åããããã®ã§ããã In addition, the photodetector is made up of a large number of photosensitive elements and has the same size as the radiation image conversion panel, and during readout, the photodetector and the radiation image conversion panel are overlapped so as to be in close contact with each other. By this operation, the fluorescence emitted from the panel surface under the irradiation of excitation light is detected at each pixel of a large number of photosensitive elements adjacent to this panel.
There is no need to move the panel as in the conventional radiation image conversion panel readout operation, and the radiation image detection operation is simplified.
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ã®åé¡ã解æ¶ããããšãã§ããã Furthermore, unlike conventional methods, there is no need to install a light-guiding sheet to collect the fluorescent light emitted from the panel surface, so it is possible to downsize the readout device, making it possible to capture the radiation image as described above. In the reading operation of the conversion panel, it is possible to eliminate problems such as adverse effects on image quality caused by mechanical transportation of the panel or detector.
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以äžã«æ¬çºæã詳ãã説æããã The present invention will be explained in detail below.
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ç¥ã®åºäœæ®åçŽ åãå©çšããããšãã§ããã The photodetector used in the present invention has a large number of photosensitive elements regularly arranged two-dimensionally in the horizontal direction to form a plane. A photosensitive element used in a photodetector includes, for example, a light receiving part for receiving fluorescence emitted from a phosphor layer, and a time series output of electric charges obtained through photoelectric conversion in the light receiving part as an electric signal. A known solid-state image sensor using an amorphous semiconductor or the like can be used as the photosensitive element.
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It is desirable to have a function as a filter that cuts out light in the wavelength range of the excitation light. Such a function as an optical filter can be imparted to the insulating layer by, for example, coloring the insulating layer with a coloring agent having selective light transmittance as described above.
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ãªã©ãæããããšãã§ããã The stimulable phosphor used in the present invention is a phosphor that exhibits stimulated luminescence when irradiated with radiation and then with excitation light as described above, but from a practical point of view, the wavelength is 400~ The phosphor is preferably a phosphor that exhibits stimulated luminescence in the wavelength range of 300 to 500 nm by excitation light in the 800 nm range. Examples of such stimulable phosphors include those described in U.S. Pat. No. 3,859,527.
Phosphors expressed by composition formulas such as SrS:Ce, Sm, SrS:Eu, Sm, ThO2 :Er, and La2O2S :Eu,Sm, as described in JP-A-55-12142. There is
ZnS: Cu, Pb, BaOã»xAl 2 O 3 : Eu [however, 0.8
âŠxâŠ10], and M 2+ Oã»xSiO 2 :A [however,
M 2+ is Mg, Ca, Sr, Zn, Cd, or Ba;
A is Ce, Tb, Eu, Tm, Pb, Tl, Bi, or
A phosphor represented by a composition formula such as Mn and x is 0.5âŠxâŠ2.5] (Ba 1-xy , Mgx, Cay) FX described in Japanese Patent Application Laid-open No. 12143/1983: aHu 2+ [However, X
is at least one of Cl and Br,
A phosphor represented by the composition formula: x and y are 0<x+yâŠ0.6 and xyâ 0, and a is 10 -6 âŠaâŠ5Ã10 -2 JP-A-12144-1987 stated in the issue
LnOX: xA [However, Ln is La, Y, Gd, and
At least one of Lu, X is at least one of Cl and Br, A is at least one of Ce and Tb, and x is 0<x<0.1
A phosphor represented by the composition formula of (Ba 1-x , Mã
At least one of Ca, Sr, Zn, and Cd, X is at least one of Cl, Br, and I, A is Eu, Tb, Ce, Tm, Dy, Pr, Ho,
A phosphor represented by a composition formula of at least one of Nd, Yb, and Er, and x is 0âŠxâŠ0.6, and y is 0âŠyâŠ0.2, JP-A-55-160078 Mã written in
FXã»xA: yLn [However, Mã is Ba, Ca, Sr,
At least one of Mg, Zn, and Cd, A
are BeO, MgO, CaO, SrO, BaO, ZnO,
Al 2 O 3 , Y 2 O 3 , La 2 O 3 , In 2 O 3 , SiO 2 , TlO 2 ,
ZrO 2 , GeO 2 , SnO 2 , Nb 2 O 5 , Ta 2 O 5 , and
At least one of ThO 2 , Ln is Eu, Tb,
Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Sm,
and at least one of Gd, X is Cl, Br,
and I, and x and y are respectively 5Ã10 -5 âŠxâŠ0.5 and 0<
yâŠ0.2], described in JP-A-55-116777, (Ba 1-x ,Mã x )F 2ã»aBaX 2 : yEu, zA
Mã is beryllium, magnesium, calcium,
at least one of strontium, zinc, and cadmium; X is at least one of chlorine, bromine, and iodine; A is at least one of zirconium and scandium;
a, x, y, and z are each 0.5âŠaâŠ1.25,
0âŠxâŠ1, 10 -6 âŠyâŠ2Ã10 -1 , and 0<z
âŠ10 -2 ], which is described in Japanese Patent Application Laid-Open No. 57-23673 (Ba 1-x , Mã x ) F 2ã»aBaX 2 : yEu, zB ,
Mã is beryllium, magnesium, calcium,
at least one of strontium, zinc, and cadmium;
10 -6 âŠyâŠ2Ã10 -1 and 0<zâŠ2Ã10 -2 ] A phosphor is described in JP-A-57-23675 (Ba 1 -x , Mã x )F 2ã»aBaX 2 :yEu, zA [however,
Mã is beryllium, magnesium, calcium,
at least one of strontium, zinc, and cadmium; X is at least one of chlorine, bromine, and iodine; A is at least one of arsenic and silicon; a, x, y, and z are each 0.5 âŠaâŠ1.25, 0âŠxâŠ1, 10 -6
âŠyâŠ2Ã10 -1 and 0<zâŠ10 -1 ], MãOX described in the specification of Japanese Patent Application No. 167498/1983 filed by the present applicant. :xCe[However, Mã is Pr,
Nd, Pm, Sm, Eu, Tb, Dy, Ho, Er, Tm,
is at least one trivalent metal selected from the group consisting of Yb and Bi, X is one or both of Cl and Br, and x satisfies 0<x<0.1. The represented phosphor is Ba 1-x M x/2 L x/2 FX:yEu 2+ [However,
M represents at least one alkali metal selected from the group consisting of Li, Na, K, Rb and Cs; L represents Sc, Y, La, Ce, Pr, Nd, Pm,
Sm, Gd, Tb, y, Ho, Er, Tm, Yb, Lu,
represents at least one trivalent metal selected from the group consisting of Al, Ga, In, and Tl; X is Cl,
represents at least one halogen selected from the group consisting of Br, and I; and x is 10 -2 âŠ
xâŠ0.5, y is 0<yâŠ0.1] BaFX xA:yEu 2+ [However, ,X is
is at least one halogen selected from the group consisting of Cl, Br, and I; A is a fired product of a tetrafluoroboric acid compound; and x is
10 -6 âŠxâŠ0.1, y is 0<yâŠ0.1] BaFX xA: yEu described in Japanese Patent Application No. 158048/1983 filed by the present applicant 2+ [However, X is
at least one halogen selected from the group consisting of Cl, Br, and I; A is a hexafluoro compound consisting of a monovalent or divalent metal salt of hexafluorosilicic acid, hexafluorotitanic acid, and hexafluorozirconic acid; and x is 10 -6 âŠxâŠ0.1, and y is 0<1âŠ0.1. BaFXã»xNaXâ²: aEu 2+ described in Application No. 166320/1987 [However,
X and X' are each at least one of Cl, Br, and I, and x and a are 0<xâŠ2 and 0<aâŠ0.2, respectively.] , MãFXã»xNaXâ²:yEu 2+ :zA [where Mã is selected from the group consisting of Ba, Sr, and Ca at least one alkaline earth metal; X and X' are Cl, Br, and I, respectively;
at least one halogen selected from the group consisting of; A is at least one transition metal selected from V, Cr, Mn, Fe, Co, and Ni; and x is 0<xâŠ2, y is 0<yâŠ
0.2, and z is 0<zâŠ10 -2 ], MãFXã»aMãXâ² described in the specification of Japanese Patent Application No. 184455/1983 filed by the present applicant.ã»bMâ²ãXâ³ 2ã»cMã
X 3ã»xA:yEu 2+ [However, Mã is at least one kind of alkaline earth metal selected from the group consisting of Ba, Sr, and Ca; Mã is Li, Na, K,
is at least one alkali metal selected from the group consisting of Rb, and Cs; Mâ²ã is Be and
is at least one divalent metal selected from the group consisting of Mg; M is at least one trivalent metal selected from the group consisting of Al, Ga, In, and Tl; A is a metal oxide; ;X is Cl, Br,
and at least one kind of halogen selected from the group consisting of;
is at least one kind of halogen selected from the group consisting of Cl, Br, and a is 0âŠ
aâŠ2, b is 0âŠbâŠ10 -2 , c is 0âŠcâŠ10 -2 ,
and a+b+câ§10 -6 ; x is 0<xâŠ0.5,
y is 0<yâŠ0.2], and the like.
ãªããæ¬çºæã«çšããããèŒå°œæ§èå
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äœã§ããã°ãããªããã®ã§ãã€ãŠãããã Note that the stimulable phosphor used in the present invention is not limited to the above-mentioned phosphors, but any phosphor that exhibits stimulated luminescence when irradiated with radiation and then irradiated with excitation light. It may be hot.
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åå€ãæããããšãã§ããã Examples of binders for the phosphor layer include proteins such as gelatin, polysaccharides such as dextran, or natural polymeric substances such as gum arabic; and polyvinyl butyral, polyvinyl acetate, nitrocellulose, ethylcellulose, vinylidene chloride, etc. Vinyl chloride copolymer, polymethyl methacrylate, vinyl chloride/vinyl acetate copolymer,
Examples of binders include synthetic polymeric substances such as polyurethane, cellulose acetate butyrate, polyvinyl alcohol, and linear polyester.
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æ¯æäœäžã«åœ¢æããããšãã§ããã The phosphor layer can be formed on the support, for example, by the following method.
ãŸããäžèšã®èŒå°œæ§èå
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åœãªæº¶å€ïŒããšãã°ãäœçŽã¢ã«ã³ãŒã«ãã±ãã³ã
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ãŠå¡åžæ¶²ã調æŽããã First, the above-mentioned stimulable phosphor particles and binder are mixed in a suitable solvent (for example, lower alcohol, ketone,
ester, ether) and thoroughly mixed to prepare a coating solution in which the phosphor particles are uniformly dispersed in the binder solution.
å¡åžæ¶²ã«ãããçµåå€ãšèŒå°œæ§èå
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æ··åæ¯ã¯ãç®çãšããæŸå°ç·åå€æããã«ã®ç¹
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ïŒïŒïŒä¹è³ïŒïŒ40ïŒééæ¯ïŒã®ç¯å²ã§ããããšã
奜ãŸããã The mixing ratio of the binder and the stimulable phosphor particles in the coating solution varies depending on the characteristics of the intended radiation image conversion panel, the type of phosphor particles, etc., but in general, the mixing ratio of the binder and the stimulable phosphor particles is Mixing ratio is 1:1
The range is from 1:100 to 1:100 (by weight), and particularly preferably from 1:8 to 1:40 (by weight).
ãªããå¡åžæ¶²ã«ã¯ã該å¡åžæ¶²äžã«ãããèå
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ã®æ·»å å€ãæ··åãããŠããŠãããã Note that the coating liquid contains a dispersant for improving the dispersibility of the phosphor particles in the coating liquid, and
Various additives such as a plasticizer may be mixed in order to improve the bonding force between the binder and the phosphor particles in the phosphor layer after formation.
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ããšã«ãã也æããã The coating solution containing the stimulable phosphor particles and binder prepared as described above is then uniformly applied to the surface of the support to form a coating film. This coating operation can be carried out using conventional coating means such as a doctor blade, roll coater, knife coater, etc. Then, the formed coating film is dried by gradually heating it.
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è³500ÎŒmãšããã®ã奜ãŸããã The thickness of the phosphor layer varies depending on the characteristics of the intended radiation image conversion panel, the type of phosphor particles, the mixing ratio of the binder and the phosphor particles, etc.
The thickness should be between 20ÎŒm and 1mm. However, the thickness of this layer is preferably 50 to 500 ÎŒm.
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ïŒä¹è³20ÎŒmãšããã®ãæãŸããã Preferably, a transparent protective film is provided on the phosphor layer to protect the phosphor layer from physical impact and chemical alteration. This protective film may be made of, for example, a cellulose derivative such as cellulose acetate or nitrocellulose; or polymethyl methacrylate, polyvinyl butyral, polyvinyl formal, polycarbonate, polyvinyl acetate, vinyl chloride/vinyl acetate copolymer,
It is formed from synthetic polymeric substances such as polyethylene terephthalate, polyethylene, vinylidene chloride, and polyamide. The thickness of the protective film is preferably about 3 to 20 ÎŒm.
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ããã³CdSã奜ãŸããã However, in the radiation image conversion panel and photodetector used in the present invention, the wavelength range of stimulated luminescence of the stimulable phosphor contained in the panel is used in the light receiving part of the photosensitive element that is the photodetector. It is necessary to use them in combination so that they overlap with the light absorption wavelength range of the photoconductive material. That is, the photostimulable phosphor and photoconductive material used in the present invention must be selected so that at least a portion of the emission wavelength region of stimulated light overlaps at least a portion of the light absorption wavelength region of the photoconductive material. Must be. For example, when using α-Si as a photoconductive material, the stimulable phosphor is 600nm.
A phosphor having a stimulated emission wavelength in the vicinity is preferred.
In addition, as a stimulable phosphor, there is a divalent europium-activated alkaline earth metal fluorohalide phosphor (the peak wavelength of light emission is approximately 390 nm), which has a stimulable emission wavelength in the near ultraviolet to visible range. When using phosphor, ZnS is the photoconductive material.
and CdS are preferred.
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·äœçã«èª¬æããã Next, regarding the radiation image detection method of the present invention, the partial sectional view of the radiation image conversion panel shown in FIG. 1, the partial sectional view of the photodetector shown in FIG. 2, and the partial sectional view of the photodetector shown in FIG. A detailed description will be given with reference to an example of a circuit diagram of a photodetector.
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å°ç·åå€æããã«ã®éšåæé¢å³ã§ããã FIG. 1 is a partial cross-sectional view of a radiation image conversion panel which is constituted of a protective film 1, a phosphor layer 2 containing a stimulable phosphor, and a support 3 in this order.
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incident on the radiation image conversion panel. Radiation having strengths and weaknesses corresponding to the radiographic image of the subject is absorbed by the phosphor layer 2, and an accumulated image of radiation energy (a kind of latent image) corresponding to the radiographic image of the subject is formed on the phosphor layer 2. be done.
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The protective film 1 of the panel shown in FIG. 1 and the insulating layer 4 of the photodetector shown in FIG. 2 are placed on the inside so that they are in close contact with each other.
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çåšã«æ¥ç¶ãããŠããã FIG. 2 is a longitudinal sectional view of one pixel of the photodetector. The photosensitive element includes a photodiode 5 which is a light receiving section provided on an insulating layer 4, and a MOS:FET (Metal Oxide Semiconductor) which is a transfer section.
Field Effect Transistor)6. The insulating layer 4 has such a light transmittance that it transmits only light in the wavelength range of stimulated luminescence emitted from the radiation image conversion panel, and cuts out light in the wavelength range of excitation light. The photodiode 5 consists of, in order, a metal layer 7 such as aluminum which is ground, a p-type α-Si:H layer 8, an i-type α-Si:H layer 9, and a transparent electrode layer 10 of tin dioxide (SnO 2 ). . Mataru
The MOS:FET 5 includes metal layers 11 and 12 such as aluminum provided at both ends, an α-Si:H layer 13 provided in this order inside these metal layers, an insulator layer 14 of silicon (SiO 2 ), and aluminum. It consists of transfer electrodes 15 such as. This metal layer 12 is a drain and is connected to the transfer register. On the other hand, the transfer electrode 15 is a gate and is connected to a scanning pulse generator.
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One pixel 16 corresponds to FIG. 2, and the light receiving section 17
and a transfer unit 18. In each transfer section, a scanning pulse generator 19 and a transfer register 20 are provided with output terminals 21, respectively.
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radiated as. This fluorescence is proportional to the intensity of radiation energy absorbed by the phosphor layer 2. Only the emitted fluorescence is received by a photodiode 5 passing through an insulating layer 4 which also serves as a filter of the photosensitive element shown in FIG. 2, and a signal charge is generated in the photodiode 5. In this way, a signal charge is generated in each pixel of the photosensitive element in proportion to the luminance of fluorescence, that is, the intensity of the radiation incident on the phosphor layer of the radiation image conversion panel.
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That is, the signal charge generated in the photodiode 5 shown in FIG. 2 is transferred through the MOS:FET 6. Therefore, the signal charges of each pixel in the top row are sent to the transfer register 20 simultaneously. Transfer register 2
From the output terminal 21 of 0, electrical signals for each pixel are extracted in time series.
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æ°ããŒãçã«èšé²ä¿åãããŠãããã The electrical signal output from the photodetector is amplified by an amplifier and reproduced as an image by an image reproduction device. The electrical signal obtained here may be subjected to image processing such as spatial frequency processing, gradation processing, averaging processing, reduction processing, and enlargement processing, if desired. The obtained image may then be recorded on a recording medium or displayed on an image display device. As the recording medium, for example, one that records optically by scanning a photographic light-sensitive material with a laser beam or the like, and one that records on a light-sensitive recording material using heat rays can be used. Further, as the image display device, display devices based on various principles can be used, such as one that displays electronically on a CRT or the like, or one that records a radiation image displayed on a CRT or the like on a video printer or the like. Further, this radiation image information of the subject may be recorded and stored on a magnetic tape or the like.
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ãã°3kHzçšåºŠã奜ãŸããã In addition, as a photosensitive element of the photodetector used in the present invention, for example, one pixel has a size of approximately 200 ÎŒm x 200 ÎŒm.
can be used. For example, the size of the radiation image conversion panel and photodetector should be set to about the same size as a conventional radiation intensifying screen (430 mm x
354mm), the photodetector is 2150 x 1750
Consists of pixels. α-Si is preferable as a material for a uniform photosensitive element that forms such a large area, and it is desirable that the area of the light receiving portion be as large as possible. In a photodetector having the structure and size as described above, the pulse output from the scanning pulse generator of the photosensitive element is preferably about 3 kHz, for example.
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It is not limited to the above size.
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ããšãããšãå¯èœã§ããã The radiation image conversion panel used in the present invention is not limited to the configuration illustrated in FIG. Any configuration is possible as long as it is possible. Furthermore, the photodetector composed of a large number of photosensitive elements used in the present invention is not limited to the configuration illustrated in FIGS. It can take any form as long as the photostimulance can be read.
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ãè¡ãªãããšãå¯èœã§ããã Furthermore, the radiation image detection method of the present invention is not limited to the methods exemplified above, for example,
As a method for detecting the radiation image stored and recorded in the phosphor layer of the radiation image conversion panel, a preliminary operation is performed by irradiating weak electromagnetic waves to measure the amount of photostimulated light before the main operation described above. It's okay,
Based on the results of this preliminary operation, it is also possible to set the amplification factor of the obtained electrical signal, the reproduction image processing conditions, etc.
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FIG. 1 is a schematic partial sectional view of a radiation image conversion panel used in the radiation image detection method of the present invention. 1: Protective film, 2: Phosphor layer, 3: Support FIG. 2 is a schematic partial cross-sectional view of a photodetector used in the radiation image detection method of the present invention. 4: Insulating layer, 5: Photodiode, 6:
MOS: FET, 7: Metal layer, 8: p-type α-Si:H
layer, 9: i-type α-Si:H layer, 10: transparent electrode layer,
11, 12: metal layer, 13: α-Si:H layer, 1
4: Insulator layer, 15: Transfer electrode FIG. 3 is a schematic circuit diagram of a photodetection method used in the radiation image detection method of the present invention. 16: one pixel, 17: light receiving section, 18: transfer section,
19: Scanning pulse generator, 20: Transfer register,
21: Output terminal.
Claims (1)
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åºæ¹æ³ã[Claims] 1. Radiation transmitted through a subject or emitted from a subject is absorbed by a radiation image conversion panel having a phosphor layer containing a stimulable phosphor,
Next, a photodetector comprising a large number of photosensitive elements regularly arranged two-dimensionally on the panel and an insulating layer that transmits stimulated light emitted by the stimulable phosphor but does not transmit excitation light. are stacked so that the insulating layer faces the panel, and then the panel is irradiated with excitation light to release the radiation energy stored in the panel as photostimulated light. A radiation image detection method comprising photoelectrically reading the photodetector. 2. The radiation image detection method according to claim 1, wherein the phosphor layer contains a divalent eurobium-activated alkaline earth metal fluorohalide phosphor. 3. The radiation transmitted through the subject or emitted from the subject is absorbed by a radiation image conversion panel having a phosphor layer containing a stimulable phosphor,
Next, a large number of photosensitive elements are arranged on a laminate of the panel, an insulating layer that transmits the stimulated light emitted by the stimulable phosphor, and a filter layer that transmits the stimulated light but does not transmit the excitation light. After stacking the photodetectors arranged in a two-dimensional manner so that the stack faces the panel, the panel is irradiated with excitation light to detect the radiation accumulated in the panel. A radiation image detection method comprising emitting energy as photostimulated light and photoelectrically reading this stimulated light using the photodetector. 4. The radiation image detection method according to claim 3, wherein the phosphor layer contains a divalent eurobium-activated alkaline earth metal fluorohalide phosphor.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58086227A JPS59211264A (en) | 1983-05-16 | 1983-05-16 | Radiation image detecting method |
US06/610,582 US4803359A (en) | 1983-05-16 | 1984-05-15 | Method for detecting radiation image |
DE8484105518T DE3484804D1 (en) | 1983-05-16 | 1984-05-15 | METHOD FOR DISCOVERING A RADIATION IMAGE. |
EP84105518A EP0125691B1 (en) | 1983-05-16 | 1984-05-15 | Method for dectecting radiation image |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58086227A JPS59211264A (en) | 1983-05-16 | 1983-05-16 | Radiation image detecting method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59211264A JPS59211264A (en) | 1984-11-30 |
JPH0471347B2 true JPH0471347B2 (en) | 1992-11-13 |
Family
ID=13880901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58086227A Granted JPS59211264A (en) | 1983-05-16 | 1983-05-16 | Radiation image detecting method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59211264A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2609590B2 (en) * | 1986-09-04 | 1997-05-14 | æ ªåŒäŒç€Ÿæ±è | 2D radiation detector |
JPS6478185A (en) * | 1987-09-21 | 1989-03-23 | Hitachi Ltd | Radiation detecting element |
FR2623019B1 (en) * | 1987-11-10 | 1990-05-11 | Thomson Csf | RADIOLOGICAL IMAGE TAKING DEVICE |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51120186A (en) * | 1975-04-14 | 1976-10-21 | Hitachi Ltd | Radiation solid photographing device |
-
1983
- 1983-05-16 JP JP58086227A patent/JPS59211264A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51120186A (en) * | 1975-04-14 | 1976-10-21 | Hitachi Ltd | Radiation solid photographing device |
Also Published As
Publication number | Publication date |
---|---|
JPS59211264A (en) | 1984-11-30 |
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