JPH0312301B2 - - Google Patents
Info
- Publication number
- JPH0312301B2 JPH0312301B2 JP59085722A JP8572284A JPH0312301B2 JP H0312301 B2 JPH0312301 B2 JP H0312301B2 JP 59085722 A JP59085722 A JP 59085722A JP 8572284 A JP8572284 A JP 8572284A JP H0312301 B2 JPH0312301 B2 JP H0312301B2
- Authority
- JP
- Japan
- Prior art keywords
- photodetector
- radiation image
- light
- sheet
- image information
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 55
- 238000006243 chemical reaction Methods 0.000 claims description 32
- 230000005284 excitation Effects 0.000 claims description 25
- 230000005855 radiation Effects 0.000 claims description 24
- 230000035945 sensitivity Effects 0.000 claims description 16
- 238000004020 luminiscence type Methods 0.000 claims description 15
- 229910052693 Europium Inorganic materials 0.000 claims description 4
- 229910001615 alkaline earth metal halide Inorganic materials 0.000 claims description 3
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 description 5
- 229910052794 bromium Inorganic materials 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 3
- 229910052771 Terbium Inorganic materials 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- QWZHDKGQKYEBKK-UHFFFAOYSA-N 3-aminochromen-2-one Chemical compound C1=CC=C2OC(=O)C(N)=CC2=C1 QWZHDKGQKYEBKK-UHFFFAOYSA-N 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 238000001444 catalytic combustion detection Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- -1 (α-Si:H) is selected Inorganic materials 0.000 description 1
- XJKSTNDFUHDPQJ-UHFFFAOYSA-N 1,4-diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=C(C=2C=CC=CC=2)C=C1 XJKSTNDFUHDPQJ-UHFFFAOYSA-N 0.000 description 1
- IJCLOOKYCQWSJA-UHFFFAOYSA-N 7-amino-3-phenylchromen-2-one Chemical compound O=C1OC2=CC(N)=CC=C2C=C1C1=CC=CC=C1 IJCLOOKYCQWSJA-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- VYXSBFYARXAAKO-WTKGSRSZSA-N chembl402140 Chemical compound Cl.C1=2C=C(C)C(NCC)=CC=2OC2=C\C(=N/CC)C(C)=CC2=C1C1=CC=CC=C1C(=O)OCC VYXSBFYARXAAKO-WTKGSRSZSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- GNBHRKFJIUUOQI-UHFFFAOYSA-N fluorescein Chemical compound O1C(=O)C2=CC=CC=C2C21C1=CC=C(O)C=C1OC1=CC(O)=CC=C21 GNBHRKFJIUUOQI-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910001509 metal bromide Inorganic materials 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910001511 metal iodide Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2012—Measuring radiation intensity with scintillation detectors using stimulable phosphors, e.g. stimulable phosphor sheets
- G01T1/2014—Reading out of stimulable sheets, e.g. latent image
Description
【発明の詳細な説明】
（発明の分野）
本発明は放射線画像情報を担持した蓄積性螢光
体に励起光を照射して、発生する輝尽発光光を読
み取つて画像信号を得る放射線画像情報読取装置
に関するものであり、特に詳細にはSi等の光電変
換素子を用いた光検出器により画像読取りを行な
う放射線画像読取装置に関するものである。Detailed Description of the Invention (Field of the Invention) The present invention relates to radiation image information in which an image signal is obtained by irradiating a stimulable phosphor carrying radiation image information with excitation light and reading the generated stimulated luminescence light. The present invention relates to a reading device, and particularly relates to a radiation image reading device that reads an image using a photodetector using a photoelectric conversion element such as Si.
（発明の技術的背景および先行技術）
蓄積性螢光体シートに人体等の放射線画像情報
を一旦蓄積記録し、その後これを励起光で走査し
て発生した輝尽発光光を光検出器で読み取つて画
像信号を得、この画像信号を用いて前記放射線画
像を再生する方法及び装置が、米国特許3859527
号によつて知られている。(Technical Background and Prior Art of the Invention) Radiation image information of a human body, etc. is temporarily stored and recorded on a stimulable phosphor sheet, and then this is scanned with excitation light, and the generated stimulated luminescence light is read by a photodetector. A method and apparatus for obtaining an image signal and reproducing the radiation image using this image signal are disclosed in US Pat.
Known by the number.
この装置では蓄積性螢光体シートに対して45°
の角度にセツトされたハーフミラーの後方より、
このハーフミラーを透過して励起光を前記シート
に照射し、発生する輝尽発光光を前記ハーフミラ
ーにより励起光の光路と略垂直方向に反射させて
イメージインテンシフアイアー管又は光電子増倍
管で受光するか、又は、蓄積性螢光体シートの裏
面からアバーチヤーを介して励起光を照射し、前
記シートの表面に発生する輝尽発光光をプリズム
で横方向に反射させイメージインテンシフアイア
ー管で受光している。ところが上記のハーフミラ
ーやプリズムはいずれも蓄積性螢光体シートから
なり離れた位置に設けられているため、無指向性
で、しかもそれ自体微弱な光である輝尽発光光を
効率よく集光することができない。 This device uses a 45° angle to the stimulable phosphor sheet.
From behind the half mirror set at an angle of
Excitation light is transmitted through this half mirror and irradiated onto the sheet, and the generated stimulated luminescence light is reflected by the half mirror in a direction substantially perpendicular to the optical path of the excitation light to form an image intensifier tube or a photomultiplier tube. Alternatively, excitation light is irradiated from the back side of the stimulable phosphor sheet through an avertature, and the stimulated luminescent light generated on the surface of the sheet is reflected laterally with a prism to form an image intensifier. The light is received by the tube. However, since the half mirrors and prisms mentioned above are all made of stimulable phosphor sheets and are placed at separate locations, they are non-directional and are efficient in concentrating the stimulated luminescence light, which itself is weak light. Can not do it.
また米国特許4302671号には蓄積性螢光体シー
トに近傍させて光検出器を配置し、この両者の間
に微少な反射光学素子を設け、前記反射光学素子
によつて前記光検出器と蓄積性螢光体シートの間
隙を進んでくる励起光を反射させて蓄積性螢光体
シートに入射させる構成の装置が記載されてい
る。この装置によれば、受光立体角をかなり大き
くとることが可能であるためＳ／Ｎ比の向上が達
成されるが、励起光を、シートと光検出器の間隙
を進ませ、かつ微少な反射光学素子に導くために
複雑かつ精密な光学装置を必要とする。 Further, in US Pat. No. 4,302,671, a photodetector is placed near a stimulable phosphor sheet, a minute reflective optical element is provided between the two, and the reflective optical element connects the photodetector to the stimulable phosphor sheet. A device is described in which excitation light traveling through gaps in a stimulable phosphor sheet is reflected and incident on a stimulable phosphor sheet. According to this device, the S/N ratio can be improved because the solid angle of light reception can be made considerably large. Requires complex and precise optical equipment to guide the optical elements.
そこでSi等からなる光電変換素子を多数集積し
てなる光検出器、例えばラインセンサや、シート
全面に対向するマトリクス型のセンサ等を蓄積性
螢光体シート表面に近接させて配置し、該光検出
器の出力を画像読取手段によつて読み取ることが
考えられる。このような光検出器によれば微弱な
輝尽発光光を効率良く検出できるし、さらに読取
り時間の短縮化、読取装置の小型化も達成でき
る。 Therefore, a photodetector made by integrating a large number of photoelectric conversion elements made of Si or the like, such as a line sensor or a matrix type sensor facing the entire surface of the sheet, is placed close to the surface of the stimulable phosphor sheet. It is conceivable that the output of the detector is read by an image reading means. With such a photodetector, weak stimulated luminescence light can be detected efficiently, and furthermore, the reading time can be shortened and the reading device can be made smaller.
ところが上記のような光電変換素子は特定の感
度波長域を有するので、輝尽発光光がこの感度波
長域外の光を主として含むものである場合には、
光検出器の感度が不足する不具合が生じる。例え
ば前記蓄積性螢光体としてはBaFBr：Eu、
BaClBr：Euなどが好適に用いられ、一方光検出
器を構成する光電変換素子としては、暗電流が小
さくて量子効率が良く、また製造性も良いSi素子
が多く用いられるが、上記BaFBr：Euや
BaClBr：Euなど好ましい蓄積性螢光体が発する
輝尽発光光は主に波長350〜420nｍの光を含むも
のであるのに対し、Si素子の主たる感度波長域は
440nｍ以上であるため、この場合には十分な光
検出器感度が得られないという問題があつた。 However, since the above-mentioned photoelectric conversion element has a specific sensitivity wavelength range, if the stimulated luminescent light mainly contains light outside this sensitivity wavelength range,
A problem occurs in which the sensitivity of the photodetector is insufficient. For example, the storage fluorophores include BaFBr:Eu,
BaClBr:Eu and the like are preferably used, while Si elements, which have low dark current, good quantum efficiency, and good manufacturability, are often used as photoelectric conversion elements constituting photodetectors. or
The stimulated luminescent light emitted by preferred stimulable phosphors such as BaClBr:Eu mainly includes light in the wavelength range of 350 to 420 nm, whereas the main sensitivity wavelength range of Si elements is
Since the wavelength is 440 nm or more, there was a problem in that sufficient photodetector sensitivity could not be obtained in this case.
（発明の目的）
本発明は、蓄積性螢光体シート上に励起光を照
射する励起光源、特定の感度波長域を有する光電
変換素子から成る光検出器と該光検出器の出力を
読み取る読取手段とを含み、前記光電変換素子の
感度波長域と前記螢光体シートから発せられる輝
尽発光光の波長域が異なつていても、十分な光検
出器感度を確保して画像読取りを行なうことがで
きる放射線画像情報読取装置を提供することを目
的とするものである。(Object of the Invention) The present invention provides an excitation light source that irradiates excitation light onto a stimulable phosphor sheet, a photodetector comprising a photoelectric conversion element having a specific sensitivity wavelength range, and a reader that reads the output of the photodetector. means, and even if the sensitive wavelength range of the photoelectric conversion element and the wavelength range of stimulated luminescence light emitted from the phosphor sheet are different, image reading is performed while ensuring sufficient photodetector sensitivity. The object of the present invention is to provide a radiographic image information reading device that can perform the following functions.
（発明の構成）
本発明のかかる目的は、蓄積性螢光体シートと
光検出器との間に、励起光走査によつて該蓄積性
螢光体シートから発せられた輝尽発光光を受けて
主に光検出器の感度波長域内の螢光を発する波長
変換螢光体を配置することによつて達成される。(Structure of the Invention) This object of the present invention is to provide a structure between a stimulable phosphor sheet and a photodetector to receive stimulated luminescence light emitted from the stimulable phosphor sheet by scanning excitation light. This is accomplished by arranging a wavelength-converting phosphor that emits fluorescence primarily within the sensitive wavelength range of the photodetector.
本発明において、蓄積性螢光体とは、放射線
（Ｘ線、α線、β線、γ線、紫外線等）を照射す
ると、この放射線エネルギーの一部をその内部に
蓄積し、その後可視光等の励起光を照射したとき
に、蓄積されたエネルギーに応じて輝尽発光を示
すものをいう。本発明において好ましく使用しう
る蓄積性螢光体としては、例えば、希土類元素付
活アルカリ土類金属フルオロハライド螢光体〔具
体的には、特開昭55−12143号公報に記載されて
いる（Ba1-x-y、Mgx、Cay）FX：aEu2+（但しＸ
はClおよびBrのうちの少なくとも１つであり、
ｘおよびｙは０＜ｘ＋ｙ≦0.6かつxy≠０であり、
ａは10-6≦ａ≦５×10-2である）、−特開昭55−
12145号公報に記載されている（Ba1-x、M〓x）
FX：yA（但しM〓はMg、Ca、Sr、ZnおよびCd
のうちの少なくとも１つ、ＸはCl、Br、および
Ｉのうちの少なくとも１つ、ＡはEu、Tb、Ce、
Tm、Dy、Pr、Ho、Nd、YbおよびErのうちの
少なくとも１つ、ｘは０≦ｘ≦0.6、ｙは０≦ｙ
≦0.2である）等〕；特開昭55−12142号公報に記
載されているZnS：Cu、Pb、BaO・xAl2O3：Eu
（但し0.8≦ｘ≦10）およびM〓Ｏ・xSiO2：Ａ（但
しM〓はMg、Ca、Sr、Zn、CdまたはBaであり、
ＡはCe、Tb、Eu、Tm、Pb、Tl、BiまたはMn
であり、ｘは0.5≦ｘ≦2.5である）；および特開
昭55−12144号公報に記載されたLnOX：xA（但
しLnはLa、Ｙ、GdおよびLuのうちの少なくと
も１つ、ＸはClおよびBrのうちの少なくとも１
つ、ＡはCeおよびTbのうちの少なくとも１つ、
ｘは０＜ｘ＜0.1である）；特願昭58−193161号明
細書に記載されているM〓X2・aM〓X′2：xEu2+
（但し、M〓はBa、SrおよびCaからなる群より選
ばれる少なくとも一種のアルカリ土類金属であ
り；ＸおよびX′はCl、BrおよびＩからなる群よ
り選ばれる少なくとも一種のハロゲンであつて、
かつＸ〓X′であり；そしてａは0.1≦ａ≦10.0の
範囲の数値であり、ｘは０＜ｘ≦0.2の範囲の数
値である）；などが挙げられる。これらの内でも
好ましいのは希土類元素付活アルカリ土類金属ハ
ロゲン化物螢光体であり、とくに二価ユーロピウ
ム付活アルカリ土類金属ハロゲン化物螢光体が好
ましい。 In the present invention, a storage phosphor refers to a phosphor that, when irradiated with radiation (X-rays, α-rays, β-rays, γ-rays, ultraviolet rays, etc.), accumulates a part of this radiation energy inside it, and then A substance that exhibits stimulated luminescence depending on the accumulated energy when irradiated with excitation light. As the stimulable phosphor that can be preferably used in the present invention, for example, a rare earth element-activated alkaline earth metal fluorohalide phosphor [specifically, described in JP-A-55-12143] Ba 1-xy , Mg x , Ca y ) FX: aEu 2+ (However,
is at least one of Cl and Br,
x and y are 0<x+y≦0.6 and xy≠0,
a is 10 -6 ≦ a ≦ 5 × 10 -2 ), - Japanese Patent Application Laid-open No. 1983-
Described in Publication No. 12145 (Ba 1-x , M〓 x )
FX: yA (However, M〓 is Mg, Ca, Sr, Zn and Cd
X is at least one of Cl, Br, and I; A is Eu, Tb, Ce,
At least one of Tm, Dy, Pr, Ho, Nd, Yb and Er, x is 0≦x≦0.6, y is 0≦y
≦0.2); ZnS: Cu, Pb, BaO x Al 2 O 3 : Eu
(however, 0.8≦x≦10) and M〓O・xSiO 2 :A (however, M〓 is Mg, Ca, Sr, Zn, Cd or Ba,
A is Ce, Tb, Eu, Tm, Pb, Tl, Bi or Mn
and x is 0.5≦x≦2.5); and LnOX:xA described in JP-A-55-12144 (however, Ln is at least one of La, Y, Gd, and Lu, and X is at least one of Cl and Br
1, A is at least one of Ce and Tb;
x is 0<x < 0.1 ) ;
(However, M〓 is at least one kind of alkaline earth metal selected from the group consisting of Ba, Sr, and Ca; X and X' are at least one kind of halogen selected from the group consisting of Cl, Br, and I. ,
and X ≦ Among these, rare earth element activated alkaline earth metal halide phosphors are preferred, and divalent europium activated alkaline earth metal halide phosphors are particularly preferred.
これらのうち、バリウムフルオロハライド螢光
体に特開昭56−2385号公報、同56−2386号公報に
開示される如く金属弗化物を添加したもの、或い
は特願昭54−150873号明細書に開示される如く金
属塩化物、金属臭化物、金属沃化物の少なくとも
一種を添加したものは、輝尽発光が更に改善さ
れ、好ましい。 Among these, barium fluorohalide phosphors are added with metal fluorides as disclosed in JP-A No. 56-2385 and JP-A No. 56-2386, or those disclosed in Japanese Patent Application No. 150-873-1983. As disclosed, the addition of at least one of metal chlorides, metal bromides, and metal iodides is preferable because stimulated luminescence is further improved.
また、特開昭55−163500号公報に開示される如
く前述の如き蓄積性螢光体を用いて作成された蓄
積性螢光体の螢光体層を顔料又は染料を用いて着
色すると、最終的に得られる画像の鮮鋭度が向上
し、好ましい。 Further, as disclosed in JP-A-55-163500, when the phosphor layer of the stimulable phosphor prepared using the above-mentioned stimulable phosphor is colored with a pigment or dye, the final The sharpness of the image obtained is improved, which is preferable.
本発明において、光電変換素子としては、公知
のものを使用することができるが、とくに結晶シ
リコン、アモルフアスシリコン（α−Si：Ｈ）、
CdS：CdSeなどをフオトダイオード、CCD、
MOSの形に構成したものが入手しやすく、また
好適に使用しうる。 In the present invention, known photoelectric conversion elements can be used, but in particular, crystalline silicon, amorphous silicon (α-Si:H),
CdS: CdSe etc. are used in photodiodes, CCDs,
Those configured in the form of MOS are easily available and can be preferably used.
本発明において、波長変換螢光体としては、使
用する蓄積性螢光体シートより発せられる輝尽発
光光の波長を主として光検出器の光電変換素子の
感度波長域の光に変換する機能を有するものであ
れば、いかなるものでもよく、任意にかつ容易に
選択しうる。たとえば蓄積性螢光体として
BaFBr：Eu或いはBaFCl：Euを選び、また光電
変換素子として結晶シリコン、アモルフアスシリ
コン、（α−Si：Ｈ）より成るものを選んだ場合
には、ZnS：Cu、ナフタセン、ルブレン、ロー
ダミン6G、β型ペリレン、フルオレセイン、パ
ラターフエニル、特公昭54−4234号に開示されて
いるアミノクマリン系７−モノエチルアミノ−４
−メチルクマリン、アミノクマリン系３−フエニ
ル−７−アミノクマリンなどが好適に使用しう
る。 In the present invention, the wavelength conversion phosphor has a function of converting the wavelength of stimulated luminescence light emitted from the stimulable phosphor sheet used into light mainly in the sensitive wavelength range of the photoelectric conversion element of the photodetector. Any type can be used as long as it is suitable, and can be arbitrarily and easily selected. For example, as a storage fluorophore
When BaFBr:Eu or BaFCl:Eu is selected, and when a photoelectric conversion element made of crystalline silicon, amorphous silicon, (α-Si:H) is selected, ZnS:Cu, naphthacene, rubrene, rhodamine 6G, β-type perylene, fluorescein, paraterphenyl, aminocoumarin 7-monoethylamino-4 disclosed in Japanese Patent Publication No. 54-4234
-Methylcoumarin, aminocoumarin-based 3-phenyl-7-aminocoumarin, and the like can be suitably used.
（実施態様）
以下、図面に示す実施態様に基づいて本発明を
詳細に説明する。(Embodiments) Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings.
第１図乃至４図は、光検出器としてラインセン
サを用いた、本発明の実施態様に係る放射線画像
情報読取装置を示すものである。 1 to 4 show a radiation image information reading device according to an embodiment of the present invention, which uses a line sensor as a photodetector.
第１図は、励起光源と蓄積性螢光体シートとラ
インセンサとの配置関係を示すものであり、第２
図及び第３図はその正面断面図、側面断面図であ
る。 Figure 1 shows the arrangement relationship between the excitation light source, the stimulable phosphor sheet, and the line sensor.
The figure and FIG. 3 are a front sectional view and a side sectional view thereof.
第２図及び第３図に詳細を示すように、蓄積性
螢光体シート１の下に該シート１の巾方向に延び
た細いスリツト２Ａを介して同じくシート１の巾
方向に延びた励起光源２が配され、シート１の上
には、ちようどスリツト２Ａに対向する位置にラ
インセンサ３が配されている。ラインセンサ３は
シート１の巾方向に多数連続して並べられたｎ個
の固体光電変換素子３Ａと、この各素子３Ａに蓄
積された電荷を転送する走査回路３Ｂとからなつ
ている。 As shown in detail in FIGS. 2 and 3, an excitation light source is provided below the stimulable phosphor sheet 1 through a narrow slit 2A extending in the width direction of the sheet 1. 2 is arranged on the sheet 1, and a line sensor 3 is arranged on the sheet 1 at a position just opposite the slit 2A. The line sensor 3 is composed of a large number of n solid-state photoelectric conversion elements 3A arranged in succession in the width direction of the sheet 1, and a scanning circuit 3B that transfers the charge accumulated in each of the elements 3A.
上記シート１は、励起光源２側に配される透明
基板１Ａの上に、BaFBr：Euからなる蓄積性螢
光体層１Ｂ、長波カツトフイルタ層１Ｃ、ZnS：
Cuからなる波長変換螢光体層１Ｄが順次積層さ
れてなる。このシート１は図示しない放射線撮影
装置により、波長変換螢光体層１Ｄ側から放射線
を照射して、蓄積性螢光体層１Ｂに被写体の放射
線画像情報が蓄積記録されている。 The sheet 1 has a stimulable phosphor layer 1B made of BaFBr:Eu, a long wave cut filter layer 1C, and a ZnS:
Wavelength conversion phosphor layers 1D made of Cu are sequentially laminated. This sheet 1 is irradiated with radiation from the wavelength conversion phosphor layer 1D side by a radiation imaging device (not shown), and radiation image information of the subject is stored and recorded in the stimulable phosphor layer 1B.
励起光源２は、スリツト２Ａを介してシート１
に同時に線状の励起光照射を行なう。励起光が照
射されたシート１は、記録されている放射線画像
情報を、線状に照射された部分から同時に輝尽発
光光として出力する。この輝尽発光光は
BaFBr：Euに特有の390nｍのスペクトルの光を
主に含むものであり、フイルタ層１Ｃによつて長
波成分がカツトされてから波長変換螢光体層１Ｄ
を照射する。この波長変換螢光体層１Ｄは、上記
波長の輝尽発光光を受けて、ZnS：Cuに特有の
550nｍのスペクトルの光を主に含む螢光を発す
る。この螢光は、発光強度が上記輝尽発光光の強
度に対応するので、前記放射線画像情報を担持し
たものとなる。該螢光はラインセンサ３の各固体
光電変換素子３Ａに同時に受光され、各素子３Ａ
はフオトキヤリアを発生し、これによつて得られ
る信号を一時的に蓄積する。蓄積された信号は順
次、走査回路３Ｂで読み出され、１本の線状の照
射部（走査線に相当）の情報の読取りが終了す
る。 The excitation light source 2 is applied to the sheet 1 through the slit 2A.
At the same time, linear excitation light irradiation is performed. The sheet 1 irradiated with the excitation light simultaneously outputs the recorded radiation image information as stimulated luminescence light from the linearly irradiated portion. This stimulated luminescent light
BaFBr: Mainly contains light with a 390 nm spectrum characteristic of Eu, and after the long wavelength component is cut by the filter layer 1C, the wavelength conversion phosphor layer 1D
irradiate. This wavelength conversion phosphor layer 1D receives the stimulated luminescence light of the above wavelength and exhibits the characteristic of ZnS:Cu.
It emits fluorescent light that mainly includes light in the 550 nm spectrum. Since the emission intensity of this fluorescent light corresponds to the intensity of the stimulated luminescent light, it carries the radiation image information. The fluorescent light is simultaneously received by each solid-state photoelectric conversion element 3A of the line sensor 3, and
generates a photo carrier and temporarily stores the signal obtained thereby. The accumulated signals are sequentially read out by the scanning circuit 3B, and reading of information from one linear irradiation section (corresponding to a scanning line) is completed.
次いで、シート１は、励起光源２とラインセン
サ３に対して相対的に矢印Ａ方向に一走査線分だ
け移動され、上記読取りのステツプが繰返され
る。これをシート１全面に対して繰返すことによ
り、シート１全面に担持した放射線画像情報が読
み出される。 The sheet 1 is then moved by one scanning line in the direction of arrow A relative to the excitation light source 2 and line sensor 3, and the above reading steps are repeated. By repeating this for the entire surface of the sheet 1, the radiation image information carried on the entire surface of the sheet 1 is read out.
次にラインセンサ３に続く走査回路３Ｂについ
て説明する。第４図は光導電体を用いたラインセ
ンサおよび走査回路の等価回路である。光導電体
を用いた固体光電変換素子３Ａに前記螢光が当た
つて発生するフオトキヤリアによる信号は光導電
体３Ａ内のキヤパシタCi（ｉ＝１，２，……ｎ）
に蓄積される。蓄積されたフオトキヤリアの信号
は、シフトレジスタ１１によつて行なわれるスイ
ツチ部１０の順次開閉により順次読み出され、こ
れにより時系列化された画像信号を得ることがで
きる。画像信号は、この後増巾器１２で増幅され
てその出力端子１３から出力される。 Next, the scanning circuit 3B following the line sensor 3 will be explained. FIG. 4 is an equivalent circuit of a line sensor and a scanning circuit using a photoconductor. A photocarrier signal generated when the fluorescent light hits the solid-state photoelectric conversion element 3A using a photoconductor is transferred to a capacitor Ci (i=1, 2,...n) in the photoconductor 3A.
is accumulated in The accumulated photo carrier signals are sequentially read out by sequentially opening and closing the switch section 10 performed by the shift register 11, thereby making it possible to obtain a time-series image signal. The image signal is then amplified by an amplifier 12 and output from its output terminal 13.
なお、スイツチ部１０およびシフトレジスタ１
１からなるMOS部はCCDに置き替えてもよい。 Note that the switch section 10 and shift register 1
The MOS section consisting of 1 may be replaced with a CCD.
前記Siからなる固体光電変換素子３Ａは、Siに
特有の440nｍ以上の主たる感度波長域を有する
ものであり、もし波長390nｍの前記輝尽発光光
を検出するのであれば感度が十分ではない。しか
しこれらの固体光電変換素子３Ａは、主として
550nｍに波長変換された前記螢光を検出するよ
うになつているので、蓄積性螢光体層１Ｂに蓄積
記録された放射線画像情報を、十分高感度で読み
取りうる。 The solid-state photoelectric conversion element 3A made of Si has a main sensitivity wavelength range of 440 nm or more, which is unique to Si, and does not have sufficient sensitivity if the stimulated luminescence light with a wavelength of 390 nm is to be detected. However, these solid-state photoelectric conversion elements 3A are mainly
Since the fluorescent light whose wavelength has been converted to 550 nm is detected, the radiation image information stored and recorded in the stimulable phosphor layer 1B can be read with sufficiently high sensitivity.
第５図は、本発明の他の実施態様に係る放射線
画像情報読取装置の一部を示すものである。本実
施態様においては、ラインセンサ３の受光面に波
長変換螢光体層３Ｄと長波カツトフイルタ層３Ｃ
とが形成されている。そしてこのラインセンサ３
は、透明基板１Ａ上に蓄積性螢光体層１Ｂが担持
されてなる蓄積性螢光体シート１から放射線画像
情報を読み取る。この場合にも蓄積性螢光体層１
Ｂから発せられた輝尽発光光は、波長変換螢光体
層３Ｄを照射して該輝尽発光光よりも長波長の螢
光を発生させ、該螢光が固体光電変換素子３Ａに
十分高感度で検出されるようになる。 FIG. 5 shows a part of a radiation image information reading device according to another embodiment of the present invention. In this embodiment, a wavelength conversion phosphor layer 3D and a long wavelength cut filter layer 3C are provided on the light receiving surface of the line sensor 3.
is formed. And this line sensor 3
reads radiation image information from a stimulable phosphor sheet 1 having a stimulable phosphor layer 1B supported on a transparent substrate 1A. In this case as well, the stimulable phosphor layer 1
The stimulated luminescent light emitted from B irradiates the wavelength conversion phosphor layer 3D to generate fluorescence with a longer wavelength than the stimulated luminescent light, and the fluorescent light reaches the solid-state photoelectric conversion element 3A at a sufficiently high temperature. Becomes detected with sensitivity.
上記のように波長変換螢光体層３Ｄを光検出器
に固定すれば、波長変換螢光体および長波カツト
フイルタ材の使用量は僅少となり経済的である。 If the wavelength converting phosphor layer 3D is fixed to the photodetector as described above, the amount of wavelength converting phosphor and long-wave cut filter material to be used is small, which is economical.
本発明は以上の実施態様に限定されることなく
種々の変更が可能であることは言うまでもない。
たとえば、前記実施態様においては、光検出器と
してラインセンサを用いているが、これに限ら
ず、螢光体シートの全面にわたつて対向するよう
に配されるマトリクス型の光検出器や、ビーム状
励起光が走査される螢光体シートを表面に沿い、
励起光走査点を追つて移動せしめられるスポツト
光検出型の光検出器なども使用可能である。ま
た、前記実施態様においては、励起光源は螢光体
シートを挾んで光検出器と反対側に設けられてい
るが、光検出器と同じ側に設けてもよいのはもと
よりである。更には前記実施態様においては波長
カツトフイルタが設けられているが、これは光電
変換素子の感度波長域によつては省略しうるもの
であることも当然である。 It goes without saying that the present invention is not limited to the above-described embodiments and can be modified in various ways.
For example, in the embodiment described above, a line sensor is used as the photodetector, but the invention is not limited to this. A phosphor sheet is scanned along the surface by excitation light,
It is also possible to use a spot light detection type photodetector that is moved to follow the excitation light scanning point. Furthermore, in the embodiment described above, the excitation light source is provided on the opposite side of the photodetector with the phosphor sheet in between, but it is of course possible to provide it on the same side as the photodetector. Furthermore, although a wavelength cut filter is provided in the embodiment described above, it goes without saying that this may be omitted depending on the sensitivity wavelength range of the photoelectric conversion element.
（発明の効果）
以上詳細に説明した通り、本発明によれば、蓄
積性螢光体シートの輝尽発光光のスペクトルと光
電変換素子の感度波長域が異なつていても、十分
高感度で放射線画像情報を読み取ることができる
から、広範な種類の蓄積性螢光体を螢光体シート
材料として使用しても、種々の光電変換素子を感
度波長域にとらわれず光検出器として利用するこ
とが可能となり、光電変換効率や製造性、経済性
等のフアクターを追及して自由に光検出器を設計
できるという大きな効果を得ることができる。(Effects of the Invention) As explained in detail above, according to the present invention, even if the spectrum of the stimulated luminescence light of the stimulable phosphor sheet and the sensitivity wavelength range of the photoelectric conversion element are different, the sensitivity can be sufficiently high. Since radiation image information can be read, even if a wide variety of stimulable phosphors are used as phosphor sheet materials, various photoelectric conversion elements can be used as photodetectors regardless of their sensitivity wavelength range. This makes it possible to achieve the great effect of freely designing a photodetector by pursuing factors such as photoelectric conversion efficiency, manufacturability, and economic efficiency.
第１，２および３図はそれぞれ、本発明の第１
実施態様装置の画像読取部を示す斜視図、正面断
面図、側面断面図、第４図は上記第１実施態様装
置の走査回路を示す等価回路、第５図は本発明の
第２実施態様装置の画像読取部を示す正面断面図
である。
１……蓄積性螢光体シート、１Ｂ……蓄積性螢
光体層、１Ｄ，３Ｄ……波長変換螢光体層、２…
…励起光源、３……ラインセンサ、３Ａ……光電
変換素子、３Ｂ……走査回路。
1, 2 and 3 respectively show the first embodiment of the present invention.
A perspective view, a front cross-sectional view, and a side cross-sectional view showing the image reading section of the apparatus according to the embodiment, FIG. 4 is an equivalent circuit showing the scanning circuit of the apparatus according to the first embodiment, and FIG. 5 is an apparatus according to the second embodiment of the present invention. FIG. 3 is a front sectional view showing the image reading section of FIG. 1...Storage phosphor sheet, 1B...Storage phosphor layer, 1D, 3D...Wavelength conversion phosphor layer, 2...
...Excitation light source, 3...Line sensor, 3A...Photoelectric conversion element, 3B...Scanning circuit.
Claims (1)
体シート上に励起光を照射する励起光源、この励
起光源により励起光が照射される蓄積性螢光体シ
ートの部分に対向して配された、光電変換素子か
らなる光検出器、この光検出器と蓄積性螢光体と
の間に配され、前記励起光の照射により前記シー
トから発せられた輝尽発光光を受けて主に前記光
検出器の感度波長域内の螢光を発し、該螢光を前
記光検出器に入射させる波長変換螢光体、および
前記光検出器の出力を読み取る読取手段からなる
放射線画像情報読取装置。 ２ 前記光電変換素子がSiからなり、前記蓄積性
螢光体シートが二価ユーロピウム付活アルカリ土
類金属ハロゲン化物螢光体から成り、前記波長変
換螢光体が該輝尽発光光を受けて主に波長400n
ｍ以上の螢光を発する螢光体であることを特徴と
する特許請求の範囲第１項記載の放射線画像情報
読取装置。 ３ 前記光検出器が多数の光電変換素子からなる
ラインセンサであり、かつ、このラインセンサと
前記シートとを、該ラインセンサの長さ方向と直
角な方向に相対移動させる光検出器移動手段を備
えることを特徴とする特許請求の範囲第１項また
は第２項記載の放射線画像情報読取装置。[Scope of Claims] 1. An excitation light source that irradiates excitation light onto a stimulable phosphor sheet on which radiation image information is accumulated and recorded, and a portion of the stimulable phosphor sheet that is irradiated with excitation light by this excitation light source. A photodetector made of a photoelectric conversion element is disposed facing each other, and the photodetector is disposed between the photodetector and the stimulable phosphor, and detects stimulated luminescence light emitted from the sheet by irradiation with the excitation light. A radiation image comprising a wavelength converting phosphor that receives the light and emits fluorescent light mainly within the sensitivity wavelength range of the photodetector and causes the fluorescent light to enter the photodetector, and a reading means that reads the output of the photodetector. Information reading device. 2. The photoelectric conversion element is made of Si, the stimulable phosphor sheet is made of a divalent europium-activated alkaline earth metal halide phosphor, and the wavelength conversion phosphor receives the stimulated luminescent light. Mainly wavelength 400n
2. The radiation image information reading device according to claim 1, wherein the radiation image information reading device is a phosphor that emits fluorescent light of m or more. 3. The photodetector is a line sensor consisting of a large number of photoelectric conversion elements, and photodetector moving means for relatively moving the line sensor and the sheet in a direction perpendicular to the length direction of the line sensor is provided. A radiation image information reading device according to claim 1 or 2, characterized in that the radiation image information reading device comprises:
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59085722A JPS60230132A (en) | 1984-04-27 | 1984-04-27 | Reader for radiation image information |
| US07/222,299 US4880987A (en) | 1984-04-27 | 1988-07-22 | Radiation image read-out apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59085722A JPS60230132A (en) | 1984-04-27 | 1984-04-27 | Reader for radiation image information |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60230132A JPS60230132A (en) | 1985-11-15 |
| JPH0312301B2 true JPH0312301B2 (en) | 1991-02-19 |
Family
ID=13866731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59085722A Granted JPS60230132A (en) | 1984-04-27 | 1984-04-27 | Reader for radiation image information |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4880987A (en) |
| JP (1) | JPS60230132A (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0814995B2 (en) * | 1989-01-27 | 1996-02-14 | 株式会社東芝 | Semiconductor memory |
| FR2653233B1 (en) * | 1989-10-17 | 1994-07-29 | Commissariat Energie Atomique | LINEAR RADIATION DETECTION DEVICE. |
| IL96561A0 (en) * | 1989-12-28 | 1991-09-16 | Minnesota Mining & Mfg | Amorphous silicon sensor |
| GB9003782D0 (en) * | 1990-02-20 | 1990-04-18 | Crosfield Electronics Ltd | Image scanner apparatus |
| EP0862066B1 (en) * | 1997-01-31 | 2004-08-25 | Agfa-Gevaert | Method for readout af a stimulable phosphor screen |
| EP0964269A3 (en) * | 1998-06-10 | 2006-09-06 | Fuji Photo Film Co., Ltd. | Radiation image read-out method and apparatus |
| EP1150136A1 (en) * | 2000-04-27 | 2001-10-31 | Agfa-Gevaert naamloze vennootschap | Radiation image read out method and apparatus |
| JP2002168787A (en) * | 2000-12-04 | 2002-06-14 | Fuji Photo Film Co Ltd | Image reading method and device |
| US6800870B2 (en) * | 2000-12-20 | 2004-10-05 | Michel Sayag | Light stimulating and collecting methods and apparatus for storage-phosphor image plates |
| US6861662B2 (en) * | 2002-01-17 | 2005-03-01 | Fuji Photo Film Co., Ltd. | Image information reading apparatus |
| JP4637636B2 (en) * | 2005-04-19 | 2011-02-23 | 富士フイルム株式会社 | Radiation image information detection panel and radiation image information reader |
| FI20086240A (en) | 2008-12-23 | 2010-06-24 | Palodex Group Oy | Image plate reader device cleaning system |
| FI20086241L (en) | 2008-12-23 | 2010-06-24 | Palodex Group Oy | Image disc reader |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4179100A (en) * | 1977-08-01 | 1979-12-18 | University Of Pittsburgh | Radiography apparatus |
| JPS5611392A (en) * | 1979-07-11 | 1981-02-04 | Fuji Photo Film Co Ltd | Method and device for converting radiation image |
| US4272679A (en) * | 1979-09-28 | 1981-06-09 | Purecycle Corporation | Ultraviolet radiation sensor |
| JPS58156899A (en) * | 1982-03-15 | 1983-09-17 | 化成オプトニクス株式会社 | Radiation image conversion screen |
| JPS59181335A (en) * | 1983-03-31 | 1984-10-15 | Fuji Photo Film Co Ltd | Signal detecting method in auto-radiography |
-
1984
- 1984-04-27 JP JP59085722A patent/JPS60230132A/en active Granted
-
1988
- 1988-07-22 US US07/222,299 patent/US4880987A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4880987A (en) | 1989-11-14 |
| JPS60230132A (en) | 1985-11-15 |
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