JPH0471240A - Oxidizing method - Google Patents
Oxidizing methodInfo
- Publication number
- JPH0471240A JPH0471240A JP18480190A JP18480190A JPH0471240A JP H0471240 A JPH0471240 A JP H0471240A JP 18480190 A JP18480190 A JP 18480190A JP 18480190 A JP18480190 A JP 18480190A JP H0471240 A JPH0471240 A JP H0471240A
- Authority
- JP
- Japan
- Prior art keywords
- water vapor
- ozone
- oxidation
- oxidizing
- quartz tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 8
- 230000001590 oxidative effect Effects 0.000 title abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 239000010453 quartz Substances 0.000 abstract description 6
- 238000009279 wet oxidation reaction Methods 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 238000002485 combustion reaction Methods 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000001698 pyrogenic effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000002510 pyrogen Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は主としてシリコン半導体の酸化法に関する。[Detailed description of the invention] [Industrial application field] The present invention primarily relates to a method for oxidizing silicon semiconductors.
従来、シリコンの酸化法としては、ドライ酸化とウェッ
ト酸化の２通りがあり、ドライ酸化は、酸素ガス雰囲気
又はオゾン雰囲気（Ｓ、Ｃ，Ｃｈａｏ ｅｔ ａｊｌ
、 Ｊ、Ｅｌｅｃｔｒｏｃｈｅｓ、Ｓｏｃ、Ｖｏｌ
１３６．Ｎｏ、９．Ｐ、２７５１（１９８９））中にて
加熱して酸化する方法であり、ウェット酸化は、水蒸気
又は過酸化水素水蒸気中にて酸化する方法である。Conventionally, there are two methods of oxidizing silicon: dry oxidation and wet oxidation.
, J. Electroches, Soc., Vol.
136. No, 9. P, 2751 (1989)), and wet oxidation is a method of oxidizing in water vapor or hydrogen peroxide vapor.
上記、従来技術によると、ドライ酸化では酸素ガス雰囲
気による酸化よりオゾン雰囲気による酸化の方がより低
温で、あるいはより高速に酸化できる事が判って居り、
ウェット酸化では水蒸気中での酸化より過酸化水蒸気中
の酸化の方がより低温で、あるいはより高速に酸化でき
る事も判っては居るが、ウェット酸化による一層の低温
化あるいは高速化が生産性の向上あるいは品質の向上が
望まれている。According to the above-mentioned conventional technology, it is known that in dry oxidation, oxidation in an ozone atmosphere can be performed at a lower temperature or faster than oxidation in an oxygen gas atmosphere.
In wet oxidation, it is known that oxidation in steam peroxide can be performed at a lower temperature or faster than oxidation in water vapor, but the lower temperature or higher speed by wet oxidation will improve productivity. Improvement or quality improvement is desired.
本発明はかかるウェット酸化の低温化及び高速化を一層
計るための新しい酸化法を提供する事を［１的とする。The first object of the present invention is to provide a new oxidation method for further reducing the temperature and speed of such wet oxidation.
上記課題を解決する為に、本発明は、酸化法に関し、水
蒸気又は過酸化水素水蒸気にオゾンを添加して被酸化物
を酸化する手段を取る。In order to solve the above problems, the present invention relates to an oxidation method, and takes a method of adding ozone to water vapor or hydrogen peroxide vapor to oxidize an oxidized substance.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
いま、石英管内にシリコン・ウェーハを治具上に設置し
、前記石英管にバブラーを通して水蒸気か過酸化水素水
蒸気あるいはパイロ・ジェニックによる酸水素燃焼によ
る水蒸気を導入すると共に、前記バブラー中にオゾンを
通すかあるいは、前記石英管に、別途にオゾンを同時に
導入する等することにより、酸化速度の向上あるいは、
酸化温度の一層の低温化を工］る事が出来ると共に、オ
ゾンを添加したウェット酸化膜は、欠陥が少なく、界面
準位密度も小さくできる等、酸化膜の品質を向上するこ
とができる。Now, a silicon wafer is placed in a quartz tube on a jig, and water vapor, hydrogen peroxide vapor, or water vapor produced by oxyhydrogen combustion using a pyrogenic substance is introduced into the quartz tube through a bubbler, and ozone is passed through the bubbler. Alternatively, by simultaneously introducing ozone into the quartz tube, the oxidation rate can be improved or
In addition to being able to further lower the oxidation temperature, the wet oxide film to which ozone is added can improve the quality of the oxide film, such as having fewer defects and lowering the interface state density.
本発明により、シリコン酸化膜等の酸化膜の成長速度の
向上および酸化温度の低温化、および酸化膜の品質の向
上を計る事ができる等の効果がある。The present invention has effects such as increasing the growth rate of an oxide film such as a silicon oxide film, lowering the oxidation temperature, and improving the quality of the oxide film.
以上that's all
Claims (1)
て被酸化物を酸化する事を特徴とする酸化法。An oxidation method characterized by adding ozone to a water vapor or hydrogen peroxide vapor atmosphere to oxidize the oxidized substance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18480190A JPH0471240A (en) | 1990-07-12 | 1990-07-12 | Oxidizing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18480190A JPH0471240A (en) | 1990-07-12 | 1990-07-12 | Oxidizing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0471240A true JPH0471240A (en) | 1992-03-05 |
Family
ID=16159535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18480190A Pending JPH0471240A (en) | 1990-07-12 | 1990-07-12 | Oxidizing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0471240A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1037484C (en) * | 1988-09-13 | 1998-02-25 | 武田药品工业株式会社 | Dispersive in water and gatherable on water surface solid pesticide preparation |
-
1990
- 1990-07-12 JP JP18480190A patent/JPH0471240A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1037484C (en) * | 1988-09-13 | 1998-02-25 | 武田药品工业株式会社 | Dispersive in water and gatherable on water surface solid pesticide preparation |
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