JPS5975636A - Forming method for oxide film - Google Patents
Forming method for oxide filmInfo
- Publication number
- JPS5975636A JPS5975636A JP57186961A JP18696182A JPS5975636A JP S5975636 A JPS5975636 A JP S5975636A JP 57186961 A JP57186961 A JP 57186961A JP 18696182 A JP18696182 A JP 18696182A JP S5975636 A JPS5975636 A JP S5975636A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- oxide film
- susceptor
- heating
- ozone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】 本発明は固体材料の酸化膜の形成法。[Detailed description of the invention] The present invention is a method of forming an oxide film on a solid material.
従来、固体利料は、酸素を含有せる雰囲気中に固体材ｒ
Ｉを置き、該固体材料を加熱して、酸化するという方法
が用いられていた。Traditionally, solid materials are prepared by adding solid materials in an oxygen-containing atmosphere.
A method has been used in which the solid material is heated and oxidized.
例えば、８１半導体月料の酸化膜形成法としては、Ｓｉ
ウェハーを酸素ガスを含有せる雰囲気中で、１２００℃
の加熱により６０分で１ｏｏｏｆの８１０．膜を８１上
に形成していた。For example, as an oxide film formation method for 81 semiconductor materials, Si
The wafer is heated at 1200°C in an atmosphere containing oxygen gas.
810. of 1ooof in 60 minutes by heating. A film was formed on 81.
上記従来技術では、酸化温度が高く、かつ良質の酸化膜
が得られないという欠点があった。The above-mentioned conventional techniques have the disadvantage that the oxidation temperature is high and a good quality oxide film cannot be obtained.
本発明はかかる従来技術の欠点をなくし、低温で、高品
質の酸化膜を形成する高効率の酸化方法を提供すること
を目的とする。It is an object of the present invention to eliminate the drawbacks of the prior art and to provide a highly efficient oxidation method that forms a high quality oxide film at a low temperature.
上記目的を達成するための本発明の基本的構成は、半導
体材料、金属または合金材料および超伝導材料等の電子
材料をオゾンを含有せる雰囲気中に晒して、材料を加熱
し、酸化する事を特徴とする。The basic structure of the present invention to achieve the above object is to expose electronic materials such as semiconductor materials, metal or alloy materials, and superconducting materials to an atmosphere containing ozone, heat the materials, and oxidize them. Features.
以下、実施例により本発明を詳述する。Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明による酸化膜形成法の一例を示す模式図
である。FIG. 1 is a schematic diagram showing an example of the oxide film forming method according to the present invention.
石英反応管１内には試料支持台２が置かれ、該試料支持
台２上には、８１ウエーノ・６が設置される。前記石英
反応管１内には、窒素ガス及び酸素ノＩスがパルプ４，
５を通して、バイブロ等により供給される。前記、Ｓ１
ウエーハ３は赤外線ランプ７により支持台２を加熱して
間接加熱され、遠紫外線ランプ８によりＳ１ウエーノＳ
３の表面に到達した酸素がオゾン化されて、Ｓｉウエー
ノ・３はオゾン界囲気に晒される。排ガスはダクト９に
より外部へ排出される。A sample support stand 2 is placed inside the quartz reaction tube 1, and an 81 Ueno-6 is placed on the sample support stand 2. Inside the quartz reaction tube 1, nitrogen gas and oxygen gas are introduced into the pulp 4,
5, supplied by vibro etc. Said, S1
The wafer 3 is indirectly heated by heating the support base 2 with an infrared lamp 7, and the wafer 3 is heated indirectly with an infrared lamp 7.
Oxygen that has reached the surface of 3 is ozonized, and Si Ueno 3 is exposed to an ozone atmosphere. Exhaust gas is discharged to the outside through a duct 9.
上記方法によると、Ｓｉウェーハ上に、Ｓ１０゜膜が１
０００°Ｃで６０分の酸化処理で１０００ ’Ａの８１
０．膜が形成でき、酸化温度は約２００°Ｃ低温化でき
る。更に、形成されたＳ１０．膜の界面準位密度は、従
来法が５Ｘ１０”ｃｄであったのに対し、ｌＸ１０”ｃ
ｄ程度に低減できる。According to the above method, one S10° film is deposited on the Si wafer.
81 at 1000'A with oxidation treatment at 000°C for 60 minutes
0. A film can be formed and the oxidation temperature can be lowered by about 200°C. Furthermore, the formed S10. The interface state density of the film was 5X10"cd in the conventional method, whereas it was 1X10"cd.
It can be reduced to about d.
更に、上記方法によると、常温から１５０℃の低温で、
Ｓｉ上に３０又程度の薄いＳｉＯ，Ｊ換がトンネル膜と
して形成でき、膜質もピンホール密度が殆んど零の良質
の８１０．膜となる。Furthermore, according to the above method, at a low temperature from room temperature to 150°C,
A thin SiO,J film of about 30 layers can be formed as a tunnel film on Si, and the film quality is 810. It becomes a membrane.
前記の如く、本発明による酸化方法でば、低湿で且つ良
質の酸化膜を形成することができる効果がある。As described above, the oxidation method according to the present invention has the effect of forming a high-quality oxide film at low humidity.
本発明は常圧に限らず、減圧、あるいは高圧でのオゾン
酸化処理に用いることができる。The present invention is not limited to normal pressure, but can be used for ozone oxidation treatment at reduced pressure or high pressure.
更に、本発明は、オゾン発生器からのオゾンを反応室内
に導入しても同様の処理ができる。Furthermore, in the present invention, the same treatment can be performed even when ozone from an ozone generator is introduced into the reaction chamber.
更に、本発明は、赤外線ランプに限らず他の加熱手数に
よっても加熱でき、赤外線と遠紫外線を同一方向から試
料に照射しても良い。Furthermore, the present invention is not limited to an infrared lamp, and heating can be performed using other heating methods, and the sample may be irradiated with infrared rays and far ultraviolet rays from the same direction.
第１図は本発明によるオゾン酸化処理法の一例を示す模
式図である。
１・・・・・・反応管
２・・・・・・支持台
３・・・・・・試 料
４・・・・・・パルプ
５・・・・・・流量計
６・・・・・・パイプ
７・・・・・・ヒーター
８・・・・・・遠紫外線ランプ
９・・・・・・ダクト
以」
第１図FIG. 1 is a schematic diagram showing an example of the ozone oxidation treatment method according to the present invention. 1... Reaction tube 2... Support stand 3... Sample 4... Pulp 5... Flow meter 6...・Pipe 7...Heater 8...Far UV lamp 9...Duct" Figure 1
Claims (4)
有せる雰囲気に晒して、酸化し酸化膜を形成する事を特
徴とする酸化膜の形成法。(1) A method for forming an oxide film, which comprises heating a solid material and exposing the solid material to an atmosphere containing ozone to oxidize and form an oxide film.
の範囲第１項記載の酸化膜の形成法。(2) A method for forming an oxide film according to item 1 of the scope of patent Nt'J, in which the solid material is a semiconductor material.
請求の範囲第１項記載の酸化膜の形成法。(3) The method for forming an oxide film according to claim 1, wherein the solid material is a metal material or an alloy material.
１項記載のｉ￥ｅ化膜の形成法。(4) A method for forming an i\e film according to claim 1, wherein the solid material is a superconducting material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57186961A JPS5975636A (en) | 1982-10-25 | 1982-10-25 | Forming method for oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57186961A JPS5975636A (en) | 1982-10-25 | 1982-10-25 | Forming method for oxide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5975636A true JPS5975636A (en) | 1984-04-28 |
Family
ID=16197752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57186961A Pending JPS5975636A (en) | 1982-10-25 | 1982-10-25 | Forming method for oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5975636A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61199639A (en) * | 1985-02-28 | 1986-09-04 | Sony Corp | Method for oxidation of semiconductor |
| JPS61220338A (en) * | 1985-03-26 | 1986-09-30 | Toshiba Corp | Manufacture of semiconductor device |
| JPH01278401A (en) * | 1988-04-28 | 1989-11-08 | Teru Kyushu Kk | Process for generation of ozone |
| JPH02263146A (en) * | 1989-04-04 | 1990-10-25 | Mitsubishi Electric Corp | Ozone sensor |
| JPH04246161A (en) * | 1990-10-24 | 1992-09-02 | Internatl Business Mach Corp <Ibm> | Method for acid treatment of substrate surface and structure of semiconductor |
| US5672539A (en) * | 1994-01-14 | 1997-09-30 | Micron Technology, Inc. | Method for forming an improved field isolation structure using ozone enhanced oxidation and tapering |
-
1982
- 1982-10-25 JP JP57186961A patent/JPS5975636A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61199639A (en) * | 1985-02-28 | 1986-09-04 | Sony Corp | Method for oxidation of semiconductor |
| JPS61220338A (en) * | 1985-03-26 | 1986-09-30 | Toshiba Corp | Manufacture of semiconductor device |
| JPH01278401A (en) * | 1988-04-28 | 1989-11-08 | Teru Kyushu Kk | Process for generation of ozone |
| JPH02263146A (en) * | 1989-04-04 | 1990-10-25 | Mitsubishi Electric Corp | Ozone sensor |
| JPH04246161A (en) * | 1990-10-24 | 1992-09-02 | Internatl Business Mach Corp <Ibm> | Method for acid treatment of substrate surface and structure of semiconductor |
| US5672539A (en) * | 1994-01-14 | 1997-09-30 | Micron Technology, Inc. | Method for forming an improved field isolation structure using ozone enhanced oxidation and tapering |
| US6072226A (en) * | 1994-01-14 | 2000-06-06 | Micron Technology, Inc. | Field isolation structure formed using ozone oxidation and tapering |
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