JPH0469829A - Magneto-optical disk - Google Patents

Magneto-optical disk

Info

Publication number
JPH0469829A
JPH0469829A JP18058990A JP18058990A JPH0469829A JP H0469829 A JPH0469829 A JP H0469829A JP 18058990 A JP18058990 A JP 18058990A JP 18058990 A JP18058990 A JP 18058990A JP H0469829 A JPH0469829 A JP H0469829A
Authority
JP
Japan
Prior art keywords
film
thin film
substrate
thickness
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18058990A
Other languages
Japanese (ja)
Other versions
JP2841764B2 (en
Inventor
Osamu Okada
修 岡田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP18058990A priority Critical patent/JP2841764B2/en
Publication of JPH0469829A publication Critical patent/JPH0469829A/en
Application granted granted Critical
Publication of JP2841764B2 publication Critical patent/JP2841764B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To improve signal quality and reliablity by forming a spacer layer of a specified structure. CONSTITUTION:On a PC substrate, there are formed a SiO2 film as the first thin film layer by sputtering to 300 - 1000Angstrom thickness, ZnSe film as the second thin film layer by sputtering to 100 - 600Angstrom , and further SiN or AlN film as the third thin film layer to 200 - 800Angstrom thickness. A TbFeCo film is formed as the recording film by sputtering with using an alloy target, and then a SiN film is again formed as a protective film. The refractive index of the SiO2 film is specified to 1.40 - 1.55. Thereby, the signal quality is improved.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は光磁気ディスクの媒体構成に関するものである
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a medium configuration of a magneto-optical disk.

[従来の技術] ポリカーボネート(以下、PCと略す。)基板を用い、
希土類−遷移金属系アモルファス膜を記録膜とする光磁
気ディスクにおいては、PC基板と記録膜の間にSiN
、Aj!Nなどの窒化膜が成膜されている(この層をス
ペーサ層と称する。)。
[Prior art] Using a polycarbonate (hereinafter abbreviated as PC) substrate,
In magneto-optical disks whose recording film is an amorphous rare earth-transition metal film, SiN is used between the PC board and the recording film.
,Aj! A nitride film such as N is formed (this layer is referred to as a spacer layer).

窒化膜が用いられる理由は、これらの材料の屈折率が2
前後でSiO2などの酸化物と比較すると大きく、光学
的にカー効果のエンハンス効果が得られること、PC基
板を通して記録膜に達し、記録膜を腐食させる原因とな
る水分や酸素を遮断すること、材料自身が安定であって
、分解や、記録膜、PC基板との反応が起こらないこと
等のため、光学的に、あるいは信頼性上、好ましい特徴
をもっているからである。
The reason why nitride films are used is that the refractive index of these materials is 2.
It is large compared to oxides such as SiO2 at the front and back, and can optically enhance the Kerr effect. It also blocks moisture and oxygen that reach the recording film through the PC board and cause corrosion of the recording film. This is because it is stable and does not decompose or react with the recording film or PC board, so it has favorable characteristics in terms of optical performance and reliability.

しかしながら、近年、光磁気ディスクのざらなる高性能
化が望まれており、その一方法として、スペーサ層の材
料として従来の窒化物よりもさらに高屈折率の材料を用
いる方法がある。例えば、ZnS、ZnSeあるいはカ
ルコゲンガラスは2.3以上の大きな屈折率をもつため
、これを窒化膜に代えて用いれば、窒化膜と比較してざ
らに1〜3 dBのC/Hの増加が得られる。
However, in recent years, there has been a desire to further improve the performance of magneto-optical disks, and one method for achieving this is to use a material with a higher refractive index than the conventional nitride as a material for the spacer layer. For example, ZnS, ZnSe, or chalcogen glass has a large refractive index of 2.3 or more, so if these are used in place of a nitride film, the C/H will increase by roughly 1 to 3 dB compared to a nitride film. can get.

[発明が解決しようとする課題] しかしながら、ZnS、ZnSeあるいはカルコゲンガ
ラスは、化学的安定性が悪いため、高温高湿条件では信
頼性が劣るという問題があった。
[Problems to be Solved by the Invention] However, ZnS, ZnSe, or chalcogen glass has poor chemical stability, and therefore has a problem of poor reliability under high temperature and high humidity conditions.

本発明は、このような従来の事情に鑑みてなされたもの
で、窒化膜の高信頼性と、zns、znSeあるいはカ
ルコゲンガラスの高屈折率という両者の長所を生かし、
信頼性に優れ、かつ光学的にも優れたスペーサ層を有す
る光磁気ディスクを提供することを目的とする。
The present invention was made in view of these conventional circumstances, and takes advantage of the high reliability of nitride films and the high refractive index of zns, znSe, or chalcogen glass.
It is an object of the present invention to provide a magneto-optical disk having a spacer layer that is highly reliable and optically excellent.

[課題を解決するための手段] 本発明は、基板がプリグルーブを有するポリカポネート
基板であり、記録膜が希土類−遷移金属系アモルファス
薄膜である光磁気ディスクにおいて、基板と記録膜の間
には、以下に述べる3層よりなる薄膜が順次成膜されて
いることを特徴とする光磁気ディスクである。
[Means for Solving the Problems] The present invention provides a magneto-optical disk in which the substrate is a polycarbonate substrate having pregrooves and the recording film is a rare earth-transition metal based amorphous thin film. This is a magneto-optical disk characterized in that thin films consisting of the following three layers are successively deposited.

■基板上に300〜1000 Aの厚さに成膜され、S
 i 02もしくはSiO2を主成分とする複合酸化物
からなり、屈折率が1.40〜1.55である第1の薄
膜層。
■A film is formed on the substrate to a thickness of 300 to 1000 A, and S
The first thin film layer is made of a composite oxide mainly composed of i 02 or SiO2 and has a refractive index of 1.40 to 1.55.

■第1の薄膜層上に100〜600への厚さに成膜され
、ZnS、Zn5eもしくはカルコゲンガラスからなる
第2の薄膜層。
(2) A second thin film layer formed on the first thin film layer to a thickness of 100 to 600 mm and made of ZnS, Zn5e or chalcogen glass.

■第2の薄膜層上に200〜800人の厚さに成膜され
、SiNもしくはAI!Nからなる第3の薄膜層。
■A film is formed on the second thin film layer to a thickness of 200 to 800 layers, and is made of SiN or AI! A third thin film layer made of N.

[作用1 本発明において、5i02もしくは3102を主成分と
する複合酸化物からなる第1の薄膜層は、基板とほぼ等
しい屈折率を有し、光学的には基板に含まれると考える
ことができる。この第1の薄膜層は、機械的な強度がカ
ルコゲン化合物に比較して大きく、これを補強すると共
に、基板に対して強い付着力を与えている。その膜厚は
300〜i ooo人である。膜厚が300人未満では
強度が不足するので好ましくなく、1000人より厚い
場合には急激な温湿度変化に弱くなるため、1000Å
以下に制限される。また化学的にPC基板およびカルコ
ゲン化合物に対し安定で、経時的信頼性が高い。
[Effect 1 In the present invention, the first thin film layer made of a composite oxide mainly composed of 5i02 or 3102 has a refractive index almost equal to that of the substrate, and can be optically considered to be included in the substrate. . This first thin film layer has greater mechanical strength than a chalcogen compound, and not only reinforces this, but also provides strong adhesion to the substrate. The thickness of the film is 300 to 100 mm. If the film thickness is less than 300 Å, the strength will be insufficient, which is undesirable, and if it is thicker than 1000 Å, it will be vulnerable to sudden changes in temperature and humidity.
Limited to: It is also chemically stable against PC boards and chalcogen compounds, and has high reliability over time.

一方、希土類−遷移金属系記録膜に接する部分は第3の
薄膜層たる窒化膜であるため、記録膜の信頼性は非常に
高い。さらに、第2の薄膜層であるカルコゲン化合物類
と窒化膜とは、いわゆる光学的多層膜を形成し、屈折率
の大きな単一の膜であるかのようにふるまうべく設計す
ることができ、信号品質の向上をはかることができる。
On the other hand, since the portion in contact with the rare earth-transition metal recording film is a nitride film, which is the third thin film layer, the reliability of the recording film is extremely high. Furthermore, the second thin film layer, chalcogen compounds and nitride film, forms a so-called optical multilayer film, and can be designed to behave as if it were a single film with a high refractive index, allowing signal Quality can be improved.

カルコゲン化合物類の層と窒化膜層の厚さはこの条件に
よって制限されている。
The thickness of the chalcogen compound layer and the nitride film layer is limited by this condition.

[実施例] 次に、本発明の実施例について詳細に説明する。[Example] Next, embodiments of the present invention will be described in detail.

PC基板上にZnO2を20モル%含む3i02膜をス
パッタ法にて500人形成した。次いで、Zn5eを5
00人スパッタ法にて形成した。さらにSiNを300
人形成した。記録膜はTbFeC0膜を合金ターゲット
を用い、スパッタ法にて800人形成した。保護膜とし
てSiNを800人、再び形成した。zn含有SiO2
膜の屈折率は1.55であった。
500 people formed a 3i02 film containing 20 mol % of ZnO2 on a PC substrate by sputtering. Next, Zn5e was added to 5
It was formed by a 00 person sputtering method. Furthermore, 300 SiN
Formed a person. The recording film was a TbFeC0 film formed by 800 people by sputtering using an alloy target. 800 layers of SiN were again formed as a protective film. zn-containing SiO2
The refractive index of the film was 1.55.

比較例として、S i N 800人よりなる単一のス
ペーサ層をもつディスクも作製した。
As a comparative example, a disk with a single spacer layer of 800 SiN was also fabricated.

本実施例のディスクと比較例のディスクの信号品質を、
線速11.3 m/s 、周波数7.5MHzの記録を
行って比較した。本実施例ではC/849 dBが得ら
れ、比較例ではC/N 46 dBが得られた。3 d
Bの改善効果があることが確認された。
The signal quality of the disc of this example and the disc of the comparative example is
Recording was performed at a linear velocity of 11.3 m/s and a frequency of 7.5 MHz for comparison. In this example, C/849 dB was obtained, and in the comparative example, C/N 46 dB was obtained. 3d
It was confirmed that there is an improvement effect of B.

本実施例においては、単一の記録層からなる記録膜を用
いた例を述べたが、本発明はこれに限定されるものでは
ない。記録膜が、例えばGdFeCOとTbFeを組み
合わせた2層膜である場合、アルイハT b F e 
Co/Gd F e Co/Gd T bFeCoなど
からなる、いわゆるオーバーライド可能な交換結合膜の
場合などにおいてもその効果を有し、信号品質の向上を
図ることができる。
In this embodiment, an example using a recording film consisting of a single recording layer has been described, but the present invention is not limited to this. When the recording film is, for example, a two-layer film combining GdFeCO and TbFe, Al-IHA T b Fe
This effect can also be obtained in the case of a so-called overridable exchange coupling film made of Co/Gd Fe Co/Gd T b FeCo, etc., and the signal quality can be improved.

[発明の効果] 以上説明したように、本発明による光磁気ディスクは、
スペーサ層を所定の構成とすることにより、信号品質が
改善され、かつ優れた信頼性を有するものである。
[Effects of the Invention] As explained above, the magneto-optical disk according to the present invention has the following advantages:
By having the spacer layer in a predetermined configuration, signal quality is improved and reliability is excellent.

Claims (1)

【特許請求の範囲】[Claims] (1)基板がプリグルーブを有するポリカーボネート基
板であり、記録膜が希土類−遷移金属系アモルファス薄
膜である光磁気ディスクにおいて、基板と記録膜の間に
は、以下に述べる3層よりなる薄膜が順次成膜されてい
ることを特徴とする光磁気ディスク。 [1]基板上に300〜1000Åの厚さに成膜され、
SiO_2もしくはSiO_2を主成分とする複合酸化
物からなり、屈折率が1.40〜1.55である第1の
薄膜層。 [2]第1の薄膜層上に100〜600Åの厚さに成膜
され、ZnS、ZnSeもしくはカルコゲンガラスから
なる第2の薄膜層。 [3]第2の薄膜層上に200〜800Åの厚さに成膜
され、SiNもしくはAlNからなる第3の薄膜層。
(1) In a magneto-optical disk in which the substrate is a polycarbonate substrate with pregrooves and the recording film is a rare earth-transition metal-based amorphous thin film, between the substrate and the recording film, a thin film consisting of the following three layers is sequentially formed. A magneto-optical disk characterized in that a film is formed. [1] A film is formed on the substrate to a thickness of 300 to 1000 Å,
The first thin film layer is made of SiO_2 or a composite oxide mainly composed of SiO_2 and has a refractive index of 1.40 to 1.55. [2] A second thin film layer formed on the first thin film layer to a thickness of 100 to 600 Å and made of ZnS, ZnSe, or chalcogen glass. [3] A third thin film layer formed on the second thin film layer to a thickness of 200 to 800 Å and made of SiN or AlN.
JP18058990A 1990-07-10 1990-07-10 Magneto-optical disk Expired - Lifetime JP2841764B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18058990A JP2841764B2 (en) 1990-07-10 1990-07-10 Magneto-optical disk

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18058990A JP2841764B2 (en) 1990-07-10 1990-07-10 Magneto-optical disk

Publications (2)

Publication Number Publication Date
JPH0469829A true JPH0469829A (en) 1992-03-05
JP2841764B2 JP2841764B2 (en) 1998-12-24

Family

ID=16085909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18058990A Expired - Lifetime JP2841764B2 (en) 1990-07-10 1990-07-10 Magneto-optical disk

Country Status (1)

Country Link
JP (1) JP2841764B2 (en)

Also Published As

Publication number Publication date
JP2841764B2 (en) 1998-12-24

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