JP2912725B2 - Magneto-optical recording medium - Google Patents
Magneto-optical recording mediumInfo
- Publication number
- JP2912725B2 JP2912725B2 JP9297491A JP9297491A JP2912725B2 JP 2912725 B2 JP2912725 B2 JP 2912725B2 JP 9297491 A JP9297491 A JP 9297491A JP 9297491 A JP9297491 A JP 9297491A JP 2912725 B2 JP2912725 B2 JP 2912725B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- dielectric layer
- magneto
- recording medium
- optical recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【0001】[0001]
【産業上の利用分野】本発明は、基板上に第1誘電体
層、記録層、第2誘電体層、及び反射層を順次積層して
なる光磁気記録体において、第2誘電体層にイットリウ
ム・サイアロンを用いた新規な光磁気記録体に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magneto-optical recording medium in which a first dielectric layer, a recording layer, a second dielectric layer, and a reflective layer are sequentially laminated on a substrate. The present invention relates to a novel magneto-optical recording medium using yttrium sialon.
【0002】[0002]
【従来の技術とその問題点】レーザ光を用いて記録・再
生・消去等を行う光磁気記録体は、透光性の基板上に第
1誘電体層、記録層、第2誘電体層、及び反射層が順次
積層された4層構造が一般的であり、第1及び第2誘電
体層はカーエンハンスメント効果によりカー回転角を増
大させるために設ける。2. Description of the Related Art A magneto-optical recording medium for performing recording, reproduction, erasing, and the like using a laser beam has a first dielectric layer, a recording layer, a second dielectric layer, In general, a four-layer structure in which a reflection layer and a reflection layer are sequentially stacked is provided, and the first and second dielectric layers are provided to increase a car rotation angle by a car enhancement effect.
【0003】特に第2誘電体層は、記録層と反射層との
間のカーエンハンスメント効果によりカー回転角を増大
させ、読み出し性能を向上させる役割を果たすととも
に、記録層の保護層としての働き、及び反射層に対する
断熱効果により、レーザ光の熱が反射層側へ逃げるのを
極力防止し、レーザ光を無駄なく利用することで書き込
み性能も向上させるなどの重要な役割を果たす。[0003] In particular, the second dielectric layer serves to increase the Kerr rotation angle by a car enhancement effect between the recording layer and the reflective layer, thereby improving read performance, and also functions as a protective layer for the recording layer. In addition, the heat insulating effect on the reflective layer prevents the heat of the laser light from escaping to the reflective layer as much as possible, and plays an important role such as improving the writing performance by using the laser light without waste.
【0004】しかしながら、第2誘電体層を断熱層とし
てみた場合、その厚みは厚ければ厚いほどよく、また熱
伝導率は低ければ低いほどよいが、層厚を厚くしすぎる
と第2誘電体層内で光が多重に干渉する際に、層内で光
が吸収され、反射光量が減少するという問題が生じる。
また、逆に薄くしすぎると光学的には良好でも断熱効果
が不十分となり、光磁気記録体の記録感度が大幅に低減
するという問題が生じる。したがって、第2誘電体層と
して従来から用いられているAlN膜であればせいぜい
200 〜300 Å程度の狭い範囲でしか有効でなく、また、
たとえその範囲内でも記録パワーマージンが不十分であ
るという問題があった。[0004] However, when the second dielectric layer is considered as a heat insulating layer, the thicker the better, the better the thermal conductivity is. The lower the thermal conductivity, the better. When light interferes multiplexly in the layer, light is absorbed in the layer, and a problem arises that the amount of reflected light decreases.
On the other hand, if the thickness is too small, the heat insulating effect becomes insufficient even if it is optically good, and there is a problem that the recording sensitivity of the magneto-optical recording medium is greatly reduced. Therefore, if the AlN film is conventionally used as the second dielectric layer, at most.
It is effective only in a narrow range of about 200 to 300 mm,
Even within that range, there is a problem that the recording power margin is insufficient.
【0005】[0005]
【発明の目的】そこで、本発明は上記問題点を解消し、
高い断熱効果、高いC/N値、及び高感度の光磁気記録
体を提供することを目的とする。SUMMARY OF THE INVENTION Therefore, the present invention solves the above problems,
It is an object of the present invention to provide a magneto-optical recording medium having a high heat insulating effect, a high C / N value, and a high sensitivity.
【0006】[0006]
【課題を解決するための手段】上記目的を達成するため
に、本発明の光磁気記録体は、透光性の基板上に第1誘
電体層、記録層、第2誘電体層及び反射層を順次積層
し、第2誘電体層を厚さ150〜400Åのイットリウ
ム・サイアロンで形成し、反射層をAl,Ti,Cr,
Cu,Ag,Auの金属単体およびそれらの合金、また
はその低酸化物で構成したことを特徴とする。In order to achieve the above object, a magneto-optical recording medium of the present invention comprises a first dielectric layer, a recording layer, a second dielectric layer, and a reflective layer on a light-transmitting substrate. Are sequentially laminated, the second dielectric layer is formed of yttrium sialon having a thickness of 150 to 400 °, and the reflection layer is formed of Al, Ti, Cr,
It is characterized by being composed of a single metal of Cu, Ag, and Au and an alloy thereof, or a low oxide thereof.
【0007】[0007]
【実施例】本発明に係る実施例を図面に基づき詳細に説
明する。図1に示すように本実施例に適用した光磁気記
録体Rは、直径約130mm の円盤状で透光性の基板1上
に、第1誘電体層2、記録層3、第2誘電体層4、及び
反射層5が順次積層された少なくとも4層構造となって
いる。なお、上記各層はマグネトロンスパッタ装置を用
い、Ar圧0.40〜0.65Paで成膜した。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments according to the present invention will be described in detail with reference to the drawings. As shown in FIG. 1, a magneto-optical recording medium R applied to the present embodiment has a first dielectric layer 2, a recording layer 3, and a second dielectric layer on a disk-shaped translucent substrate 1 having a diameter of about 130 mm. It has at least a four-layer structure in which a layer 4 and a reflective layer 5 are sequentially laminated. Each of the above layers was formed using a magnetron sputtering apparatus at an Ar pressure of 0.40 to 0.65 Pa.
【0008】ここで、基板1は膜厚約1.2mm のポリカー
ボネートの樹脂製基板であり、この他に強化ガラス等の
ガラス製基板も用いることができる。Here, the substrate 1 is a polycarbonate resin substrate having a thickness of about 1.2 mm, and a glass substrate such as a tempered glass can also be used.
【0009】第1誘電体層2は膜厚約1100Åの非晶質の
イットリウム・サイアロンである。このイットリウム・
サイアロンは、Ya ・Sib ・Alc ・Od ・Ne で表
され、0 <a<0.5 ,0.1 <b<0.8 , 0<c<0.5 ,
0<d<0.5 , 0.1<e<0.7 ,a+b+c+d+e=
1の条件を満たす組成である。本実施例ではa=0.04,
b=0.60, c=0.04, d=0.07, e=0.25である。な
お、第1誘電体層2は上記材料の他にSiO2 ,Si
O,CeO2 ,ZrO2 ,TiO2 ,Bi2 O3 ,Zn
S,Sb2 S3 ,Si3 N4 等も用いうる。The first dielectric layer 2 is an amorphous yttrium sialon having a thickness of about 1100 °. This yttrium
Sialon is represented by Y a · Si b · Al c · O d · N e, 0 <a <0.5, 0.1 <b <0.8, 0 <c <0.5,
0 <d <0.5, 0.1 <e <0.7, a + b + c + d + e =
The composition satisfies the condition of 1. In this embodiment, a = 0.04,
b = 0.60, c = 0.04, d = 0.07, and e = 0.25. The first dielectric layer 2 is made of SiO 2 or Si in addition to the above materials.
O, CeO 2 , ZrO 2 , TiO 2 , Bi 2 O 3 , Zn
S, Sb 2 S 3 , Si 3 N 4 and the like can also be used.
【0010】記録層3は、基板1の面に対し垂直な磁化
方向を有する垂直磁化膜であり、主に希土類元素と鉄族
元素よりなる非晶質合金を用いるが、本実施例では厚さ
約200 ÅのGdDyFeを用いる。なお、記録層はT
b,Dy,Gd,Hoの内少なくとも1種類の元素と、
Fe,Coのいずれか一方もしくは両方の元素とを含む
ものであり、例えばGdDyFeTi,GdDyFe,
GdTbFe,TbFeCo,DyFeCo,GdTb
DyFe,GdTbFeCo,TbDyFeCo,Gd
DyFeCo,NdGdDyFe,NdDyFeCo,
NdGdDyFeCo等の組成を有する。The recording layer 3 is a perpendicular magnetization film having a magnetization direction perpendicular to the surface of the substrate 1. An amorphous alloy mainly composed of a rare earth element and an iron group element is used. GdDyFe of about 200 ° is used. The recording layer is T
b, Dy, Gd, Ho, at least one kind of element;
It contains one or both elements of Fe and Co. For example, GdDyFeTi, GdDyFe,
GdTbFe, TbFeCo, DyFeCo, GdTb
DyFe, GdTbFeCo, TbDyFeCo, Gd
DyFeCo, NdGdDyFe, NdDyFeCo,
It has a composition such as NdGdDyFeCo.
【0011】第2誘電体層4は第1誘電体層2と同様な
組成の材料を用いることができるが、本実施例ではY
0.04・Si0.56・Al0.04・O0.07・N0.29を用い、厚
さを100 〜600 Åに変えて特性を測定した。なお、上記
組成の第2誘電体層4の屈折率は約2.3 であり、吸収係
数は約0.01である。これらの特性値は主にSiとNとの
組成比により若干変化するが、膜応力や信頼性等を考慮
してベストの組成比としている。For the second dielectric layer 4, a material having the same composition as that of the first dielectric layer 2 can be used.
Using 0.04 · Si 0.56 · Al 0.04 · O 0.07 · N 0.29, the characteristics were measured by changing the thickness of the 100 to 600 Å. The refractive index of the second dielectric layer 4 having the above composition is about 2.3, and the absorption coefficient is about 0.01. Although these characteristic values slightly change mainly depending on the composition ratio of Si and N, the best composition ratio is set in consideration of film stress, reliability, and the like.
【0012】反射層5は厚さ約500 ÅのAlであり、そ
の他にTi,Cr,Cu,Ag,Au等の金属単体やそ
れらの合金、又はその低酸化物を用いることができる。The reflection layer 5 is made of Al having a thickness of about 500.degree., And may be made of a single metal such as Ti, Cr, Cu, Ag, or Au, an alloy thereof, or a low oxide thereof.
【0013】次に、第2誘電体層4の厚みを種々に変え
て特性を測定した結果を図2に示す。光磁気記録体Rの
中心から30mmの位置を測定位置とし、回転数2400rpm 、
記録周波数4.9MHz、記録デューティ33%の条件で、C/
N値及びレーザの記録パワーを測定したところ、C/N
値で48dB以上(ISO規格では45dB以上が要求される)
でかつ実用的な記録パワーである8mW 以下を実現できる
第2誘電体層4の厚みは100 〜500 Åであることが判明
した。更に好適にはC/N値で50dB以上でかつ実用的な
記録パワーである8mW 以下を実現できる第2誘電体層4
の厚みは100 〜400 Åである。Next, FIG. 2 shows the results of measuring the characteristics while changing the thickness of the second dielectric layer 4 variously. A position 30 mm from the center of the magneto-optical recording medium R is set as a measurement position, and the number of rotations is 2400 rpm,
Under the conditions of a recording frequency of 4.9 MHz and a recording duty of 33%, C /
When the N value and the recording power of the laser were measured, C / N
48 dB or more (ISO standard requires 45 dB or more)
It was found that the thickness of the second dielectric layer 4 capable of realizing a practical recording power of 8 mW or less was 100 to 500 mm. More preferably, the second dielectric layer 4 can realize a C / N value of 50 dB or more and a practical recording power of 8 mW or less.
Has a thickness of 100 to 400 mm.
【0014】比較のために、第2誘電体層4に屈折率約
2.0 、吸収係数約0.05のAl0.6 N0.4 を用いた場合の
測定結果を図3に示す。なお、他の構成部材は上述した
通りであるので説明を省略する。この図から明らかなよ
うに、C/N値48dB以上でかつ記録パワー8 mW以下を実
現できるAlN膜は200 〜300 Åであり、本実施例のイ
ットリウム・サイアロンに比してかなり狭い範囲の膜厚
に限られる。For comparison, the second dielectric layer 4 has a refractive index of about
FIG. 3 shows the measurement results obtained when Al 0.6 N 0.4 having an absorption coefficient of about 2.0 and an absorption coefficient of about 0.05 was used. The other components are the same as described above, and the description is omitted. As is clear from this figure, the AlN film capable of realizing a C / N value of 48 dB or more and a recording power of 8 mW or less is 200 to 300 °, and is a film in a considerably narrower range than the yttrium sialon of this embodiment. Limited to thickness.
【0015】実用上、低い記録パワーでC/N値が立ち
上がり、高い記録パワーまでC/N値が低下しないこと
が望ましいが、図4に示すように、C/N値が48dB以上
の値をとる記録パワーの範囲を△P(=P2−P1)と
すると、図5に示すように、第2誘電体層4がイットリ
ウム・サイアロンの場合、△Pが3.5 mW以上の膜厚範囲
は150 〜500 Åの広い範囲で可能である。一方、第2誘
電体層4がAlNの場合では、上記条件下では250 〜45
0 Åの狭い膜厚範囲に限られる。また、この層がイット
リウム・サイアロンの場合、△Pが4 mW以上でも可能で
あり、その膜厚範囲は250 〜350 Åである。In practice, it is desirable that the C / N value rises at a low recording power and does not decrease to a high recording power. However, as shown in FIG. 4, a C / N value of 48 dB or more is required. Assuming that the range of the recording power to be taken is ΔP (= P2−P1), as shown in FIG. 5, when the second dielectric layer 4 is yttrium sialon, the film thickness range where ΔP is 3.5 mW or more is 150 to A wide range of 500 m2 is possible. On the other hand, when the second dielectric layer 4 is made of AlN, under the above conditions, 250 to 45
It is limited to a narrow film thickness range of 0 mm. Further, when this layer is yttrium sialon, it is possible even if {P is 4 mW or more, and its film thickness range is 250 to 350}.
【0016】[0016]
【発明の効果】本発明の光磁気記録体によれば、第2誘
電体層として膜厚100 〜400 Åのイットリウム・サイア
ロンを用いたので、高い断熱効果を有し、かつ50dB以上
の高いC/N値及び記録パワー8mW 以下の高感度を実現
でき、幅広い記録パワーマージンを有する高信頼性の光
磁気記録体を提供することができる。According to the magneto-optical recording medium of the present invention, since the yttrium sialon having a thickness of 100 to 400.degree. Is used as the second dielectric layer, it has a high heat insulating effect and a high C of 50 dB or more. / N value and a high sensitivity of 8 mW or less in recording power can be realized, and a highly reliable magneto-optical recording medium having a wide recording power margin can be provided.
【図1】本発明に係る光磁気記録体の一部断面図であ
る。FIG. 1 is a partial sectional view of a magneto-optical recording medium according to the present invention.
【図2】第2誘電体層として種々に膜厚を変えたイット
リウム・サイアロンを用いた場合のC/N値及び記録パ
ワーの測定結果を示す図である。FIG. 2 is a diagram showing measurement results of a C / N value and a recording power when yttrium sialon having various thicknesses is used as a second dielectric layer.
【図3】第2誘電体層として種々に膜厚を変えたAlN
を用いた場合のC/N値及び記録パワーの測定結果を示
す図である。FIG. 3 shows AlN of various thicknesses as a second dielectric layer
FIG. 4 is a diagram showing measurement results of a C / N value and a recording power in the case of using.
【図4】C/N値が48dB以上の記録パワーの範囲を示す
図である。FIG. 4 is a diagram illustrating a range of recording power in which a C / N value is equal to or more than 48 dB.
【図5】第2誘電体層がイットリウム・サイアロンもし
くはAlNの場合における膜厚と△Pとの関係を示す図
である。FIG. 5 is a diagram showing the relationship between the film thickness and ΔP when the second dielectric layer is yttrium sialon or AlN.
1 ・・・ 基板 2 ・・・ 第1誘電
体層 3 ・・・ 記録層 4 ・・・ 第2誘電
体層 5 ・・・ 反射層 R ・・・ 光磁気記録体DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... 1st dielectric layer 3 ... Recording layer 4 ... 2nd dielectric layer 5 ... Reflective layer R ... Magneto-optical recording body
Claims (1)
第2誘電体層、及び反射層を順次積層した光磁気記録体
であって、前記第2誘電体層を厚さ150〜400Åの
イットリウム・サイアロンで形成し、前記反射層をA
l,Ti,Cr,Cu,Ag,Auの金属単体及びそれ
らの合金、またはその低酸化物で構成したことを特徴と
する光磁気記録体。A first dielectric layer, a recording layer,
A magneto-optical recording medium in which a second dielectric layer and a reflective layer are sequentially laminated, wherein the second dielectric layer is formed of yttrium sialon having a thickness of 150 to 400 °, and the reflective layer is formed of A
1. A magneto-optical recording medium comprising a single metal of 1, 1, Ti, Cr, Cu, Ag, and Au and an alloy thereof, or a low oxide thereof.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9297491A JP2912725B2 (en) | 1991-03-29 | 1991-03-29 | Magneto-optical recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9297491A JP2912725B2 (en) | 1991-03-29 | 1991-03-29 | Magneto-optical recording medium |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04302836A JPH04302836A (en) | 1992-10-26 |
JP2912725B2 true JP2912725B2 (en) | 1999-06-28 |
Family
ID=14069377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9297491A Expired - Fee Related JP2912725B2 (en) | 1991-03-29 | 1991-03-29 | Magneto-optical recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2912725B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11296837A (en) * | 1998-04-06 | 1999-10-29 | Sharp Corp | Magnetic recording medium and recording and reproducing method using it |
-
1991
- 1991-03-29 JP JP9297491A patent/JP2912725B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH04302836A (en) | 1992-10-26 |
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