JPH0469439B2 - - Google Patents
Info
- Publication number
- JPH0469439B2 JPH0469439B2 JP20127283A JP20127283A JPH0469439B2 JP H0469439 B2 JPH0469439 B2 JP H0469439B2 JP 20127283 A JP20127283 A JP 20127283A JP 20127283 A JP20127283 A JP 20127283A JP H0469439 B2 JPH0469439 B2 JP H0469439B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- resin
- titanium oxide
- optical
- reflecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920005989 resin Polymers 0.000 claims abstract description 45
- 239000011347 resin Substances 0.000 claims abstract description 45
- 230000003287 optical effect Effects 0.000 claims abstract description 23
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 238000004898 kneading Methods 0.000 claims abstract description 8
- 229920002050 silicone resin Polymers 0.000 claims abstract description 8
- 230000005540 biological transmission Effects 0.000 claims description 19
- 239000012141 concentrate Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
(イ) 産業上の利用分野
本発明は特性をあわせた生産のしやすい光結合
器に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to an optical coupler that has matched characteristics and is easy to produce.
(ロ) 従来技術
一般に光結合器は第１図に示すように発光およ
び受光の光半導体１，２を近接するリード線３，
３に載置し、透光性樹脂４で覆つたあと、光反射
性樹脂５で覆つて構成している。ところが、この
ような光結合器は光半導体１，２の特性のばらつ
きや樹脂４，５の硬化状態（形状、光学特性等）
によつて伝達効率が大きく変化し、樹脂モールド
前に光半導体１，２の個別の特性を検査し選別し
ておいても、第２図に実線イで示す如く、特性の
ばらつきが大きい。尚、第２図は生産ロツトにお
いて、伝達効率別に数量を調べ、最も多い個数を
1.0として正規化した特性図である。(b) Prior Art Generally, as shown in Fig. 1, an optical coupler connects optical semiconductors 1 and 2 for emitting and receiving light with lead wires 3,
3, covered with a light-transmitting resin 4, and then covered with a light-reflecting resin 5. However, such optical couplers suffer from variations in the characteristics of the optical semiconductors 1 and 2 and the curing state (shape, optical characteristics, etc.) of the resins 4 and 5.
The transmission efficiency changes greatly depending on the characteristics, and even if the individual characteristics of the optical semiconductors 1 and 2 are inspected and selected before resin molding, the characteristics vary greatly, as shown by the solid line A in FIG. In addition, Figure 2 shows the quantity determined by transmission efficiency in the production lot, and the highest quantity.
It is a characteristic diagram normalized as 1.0.
このような特性のばらつきを種々検討した結
果、光反射性樹脂５にその原因の多くがあること
が明らかとなつた。即ち光反射性樹脂５は主材と
なる樹脂に光反射剤を混練しているが、主材には
二種類ある。まず主材としてエポキシ系樹脂を用
いると、光反射剤の樹脂内での分布は比較的均一
であるが、硬化後に素子にストレスが加わりやす
い。そこで概ね主材としてシリコン系樹脂を用
い、この場合には硬化後にも軟性を残すので素子
にストレスが加わらないが、硬化中にも光反射剤
が樹脂中を移動し、その結果同じ条件で硬化して
も光反射剤の濃度分布にかたよりが生じて伝達効
率を変化させていることがわかつた。 As a result of various studies on such variations in characteristics, it has become clear that the light-reflective resin 5 is responsible for many of them. That is, the light-reflecting resin 5 is made by kneading a light-reflecting agent into a resin as a main material, and there are two types of main materials. First, when an epoxy resin is used as the main material, the distribution of the light reflecting agent within the resin is relatively uniform, but stress is likely to be applied to the element after curing. Therefore, silicone resin is generally used as the main material, and in this case, it remains soft even after curing, so no stress is applied to the element, but the light reflecting agent moves through the resin during curing, and as a result, it hardens under the same conditions. However, it was found that the concentration distribution of the light reflecting agent was biased, which changed the transmission efficiency.
(ハ) 発明の目的
本発明は上述の点を考慮してなされたもので、
光伝達効率を所望の範囲に集中して生産できる光
結合器を提供するものである。(c) Purpose of the invention The present invention has been made in consideration of the above points, and
The object of the present invention is to provide an optical coupler that can concentrate and produce light transmission efficiency in a desired range.
(ニ) 発明の構成
本発明は上述した光反射性樹脂としてシリコン
樹脂中に酸化チタンを光半導体の伝達効率に関連
させて混練し、さらに好ましくは樹脂中の酸化チ
タン濃度を表面側より透光性樹脂側を高くしたも
のを用いるものである。(d) Structure of the Invention The present invention is characterized in that titanium oxide is kneaded into a silicone resin as the above-mentioned light-reflecting resin in relation to the transmission efficiency of optical semiconductors, and more preferably the titanium oxide concentration in the resin is adjusted to transmit light from the surface side. The material is made with a higher side of the plastic resin.
(ホ) 実施例
本発明において最も注目するのは第１図の構造
における光反射性樹脂５である。光反射性樹脂５
としてシリコン系樹脂を主材として用いた場合、
それを透光性樹脂４の上に滴下したあと、従来は
そのまますぐに硬化させていたが、本発明におい
ては所定時間だけ未硬化状態で放置してから硬化
させることにより界面の光反射率が安定になるこ
とが判明したことに基づいてなされたものであ
る。従つてまずこの点について詳述する。(e) Examples In the present invention, the most noteworthy feature is the light-reflecting resin 5 in the structure shown in FIG. Light reflective resin 5
When silicone resin is used as the main material,
Conventionally, after dropping it onto the transparent resin 4, it was immediately cured, but in the present invention, the light reflectance of the interface is reduced by leaving it in an uncured state for a predetermined period of time and then curing it. This was done based on the fact that it was found to be stable. Therefore, this point will be explained in detail first.
第３図はシリコン系樹脂の中に酸化チタンを所
定量混入し透光性樹脂４上に滴下した時、硬化開
始までの未硬化中での放置時間と、硬化後の光伝
達効率との特性図である。この図で示す如く、塗
布後すぐ硬化する場合と、しばらく放置してから
硬化する場合とは伝達効率はほぼ安定している
が、塗布後少し放置してから硬化させると同ロツ
ト内で伝達効率がばらつくことがわかる。さらに
ロツト内で伝達効率が安定する場合でも、しばら
く放置してから硬化する方が高い伝達高率で安定
している。この現象を解析したところ、光反射性
樹脂の滴下による塗布作業は、酸化チタンをかき
まぜる事になり、樹脂中に酸化チタンがほぼ均一
に分散する。また未硬化のまま充分長い間放置す
ると界面に酸化チタンが堆積するという状態がわ
かつた。 Figure 3 shows the characteristics of the standing time in the uncured state until the start of curing and the light transmission efficiency after curing when a predetermined amount of titanium oxide is mixed into silicone resin and dropped onto the transparent resin 4. It is a diagram. As shown in this figure, the transmission efficiency is almost stable when it cures immediately after coating and when it cures after being left for a while, but when it cures after being left for a while after coating, the transmission efficiency decreases within the same lot. It can be seen that there is variation. Furthermore, even if the transmission efficiency is stable within the rod, it is better to leave it for a while and then harden it to achieve a higher and more stable transmission efficiency. Analysis of this phenomenon revealed that applying the light-reflective resin by dropping it stirs up the titanium oxide, and the titanium oxide is almost uniformly dispersed in the resin. It was also found that if left uncured for a sufficiently long time, titanium oxide would accumulate at the interface.
一方、第４図はシリコン系樹脂中にルチル型酸
化チタンを混練した時の混練量と、硬化後の光伝
達効率の特性図であるが、５重量パーセント未満
では極端に光伝達効率が悪く、また30重量パーセ
ント以上では混練増量に対し光伝達効率が増加し
ない。これは低混練量では樹脂に遮光性が得られ
ず、また高混練量では光反射率がほぼ酸化チタン
の光反射率に等しくなるからと判断された。 On the other hand, Fig. 4 is a characteristic diagram of the amount of kneaded rutile-type titanium oxide mixed into silicone resin and the light transmission efficiency after curing. In addition, if the amount exceeds 30% by weight, the light transmission efficiency will not increase even if the amount of kneading is increased. It was determined that this was because the light-shielding properties of the resin could not be obtained at a low kneading amount, and the light reflectance became approximately equal to that of titanium oxide at a high kneading amount.
以上の成果に基づき、例えば第２図の横軸に示
す２種類の伝達効率Ａ，Ｂが求められた時には次
のように対処する。まず透光性樹脂被着前又は被
着直後の受光素子の特性に応じて酸化チタンの混
練量を５〜30重量パーセントの間で選択（例えば
伝達効率Ａに対しては受光量の大きさに応じ20〜
５重量パーセント、同様に伝達効率Ｂに対しては
受光量の大きさに応じて25〜15重量パーセントを
選択）する。そしてその光反射性樹脂滴下後常温
下で2.5〜３時間、より好ましくは樹脂粘度が上
る中高温で10〜30分放置し、酸化チタンの沈降後
に硬化させる。このようにすることで第２図の点
線ロ，ハで示す如く特性ばらつきの少ないロツト
を生産できた。 Based on the above results, for example, when two types of transmission efficiency A and B shown on the horizontal axis in FIG. 2 are determined, the following steps are taken. First, select the amount of titanium oxide mixed between 5 and 30% by weight depending on the characteristics of the light-receiving element before or immediately after coating the translucent resin (for example, for transmission efficiency A, depending on the amount of light received) 20~
Similarly, for transmission efficiency B, 25 to 15 weight percent is selected depending on the amount of received light). After dropping the light-reflective resin, the resin is left to stand for 2.5 to 3 hours at room temperature, more preferably 10 to 30 minutes at a medium-high temperature where the viscosity of the resin increases, and the titanium oxide is cured after precipitation. By doing this, it was possible to produce lots with less variation in characteristics, as shown by dotted lines B and C in FIG.
(ヘ) 発明の効果
以上の如く本発明では、光反射性樹脂は表面側
より透光性樹脂側の酸化チタン濃度を高くしてあ
る。すなわち透光性樹脂との界面に高濃度酸化チ
タンを堆積させる。故に界面の光反射率が安定す
るので、光伝達効率の特性ばらつきの少ないロツ
トを提供できる。更に本発明は、酸化チタン濃度
を５重量パーセント以上に混練することにより光
反射性樹脂の遮光性を高め光伝達効率を増加させ
る。また酸化チタン濃度を30重量パーセント以下
に混練することにより、十分な光伝達効率を得る
と共に、高価な酸化チタンを不必要に使用しなく
ても良いし、シリコン樹脂中に過剰濃度酸化チタ
ンを混練することによる硬化不良を防止できる。(F) Effects of the Invention As described above, in the present invention, the light-reflecting resin has a higher concentration of titanium oxide on the light-transmitting resin side than on the surface side. That is, highly concentrated titanium oxide is deposited at the interface with the translucent resin. Therefore, since the light reflectance at the interface is stabilized, it is possible to provide a lot with less variation in characteristics of light transmission efficiency. Further, in the present invention, by kneading the titanium oxide concentration to 5% by weight or more, the light-shielding property of the light-reflecting resin is enhanced and the light transmission efficiency is increased. In addition, by kneading the titanium oxide concentration to 30% by weight or less, sufficient light transmission efficiency can be obtained, and there is no need to use expensive titanium oxide unnecessarily. This can prevent curing defects.
第１図は光結合器の断面図、第２図は生産した
光結合器の特性ばらつきを示す特性図、第３図と
第４図は本発明実施に伴う光結合器の特性図であ
る。
１，２……光半導体、３，３……リード線、４
……透光性樹脂、５……光反射性樹脂。
FIG. 1 is a cross-sectional view of the optical coupler, FIG. 2 is a characteristic diagram showing variations in characteristics of the produced optical coupler, and FIGS. 3 and 4 are characteristic diagrams of the optical coupler according to the implementation of the present invention. 1, 2... Optical semiconductor, 3, 3... Lead wire, 4
...Translucent resin, 5...Light reflective resin.
Claims (1)
光の光半導体と、該光半導体を覆う透光性樹脂
と、該透光性樹脂を覆う光反射性樹脂を具備した
光結合器において、 前記光反射性樹脂は、シリコン樹脂中に酸化チ
タンを前記光半導体の伝達効率に関連した５乃至
30重量パーセント混練し、表面側より透光性樹脂
側の濃度を高くしてある事を特徴とする光結合
器。[Scope of Claims] 1. A light including a light-emitting and light-receiving optical semiconductor placed on adjacent lead wires, a light-transmitting resin covering the light-transmitting resin, and a light-reflecting resin covering the light-transmitting resin. In the coupler, the light-reflecting resin contains titanium oxide in a silicone resin with a concentration of 5 to 5, which is related to the transmission efficiency of the optical semiconductor.
An optical coupler characterized by kneading 30% by weight and having a higher concentration on the translucent resin side than on the surface side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58201272A JPS6092677A (en) | 1983-10-26 | 1983-10-26 | Optical coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58201272A JPS6092677A (en) | 1983-10-26 | 1983-10-26 | Optical coupler |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6092677A JPS6092677A (en) | 1985-05-24 |
| JPH0469439B2 true JPH0469439B2 (en) | 1992-11-06 |
Family
ID=16438203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58201272A Granted JPS6092677A (en) | 1983-10-26 | 1983-10-26 | Optical coupler |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6092677A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0749812Y2 (en) * | 1990-04-10 | 1995-11-13 | シャープ株式会社 | Optical coupling device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55166971A (en) * | 1979-06-14 | 1980-12-26 | Nec Corp | Photocoupling device |
| JPS56121958A (en) * | 1980-03-03 | 1981-09-25 | Kiyomitsu Ono | Collecting method of solar ray |
-
1983
- 1983-10-26 JP JP58201272A patent/JPS6092677A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55166971A (en) * | 1979-06-14 | 1980-12-26 | Nec Corp | Photocoupling device |
| JPS56121958A (en) * | 1980-03-03 | 1981-09-25 | Kiyomitsu Ono | Collecting method of solar ray |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6092677A (en) | 1985-05-24 |
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