JPS6092677A - Optical coupler - Google Patents
Optical couplerInfo
- Publication number
- JPS6092677A JPS6092677A JP58201272A JP20127283A JPS6092677A JP S6092677 A JPS6092677 A JP S6092677A JP 58201272 A JP58201272 A JP 58201272A JP 20127283 A JP20127283 A JP 20127283A JP S6092677 A JPS6092677 A JP S6092677A
- Authority
- JP
- Japan
- Prior art keywords
- light
- resin
- titanium oxide
- optical
- reflecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 28
- 229920005989 resin Polymers 0.000 claims abstract description 44
- 239000011347 resin Substances 0.000 claims abstract description 44
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 229920002050 silicone resin Polymers 0.000 claims abstract description 7
- 238000004898 kneading Methods 0.000 claims abstract description 4
- 230000005540 biological transmission Effects 0.000 claims description 18
- 239000012141 concentrate Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 210000003746 feather Anatomy 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Classifications
-
- H01L31/0203—
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
-
- H01L31/12—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は特性をあわせた生産のしやすい光結合器に関す
る。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to an optical coupler that is easy to produce and has matched characteristics.
（ロ）従来技術
一般に光結合器は第１図に示すように発光および受光の
光半導体＋ＩＨ２）を近接するリード線１３＋ １３１
に載置し、透光性樹脂（４）で覆ったあと、光反射性樹
１１１１５＋で覆って構成している。ところが、このよ
うな光結合器は光半導体（１）＋２１の特性のばらつき
や樹脂＋４１１５１の硬化状態（形状、光学特性等）に
よって伝達効率が太き（変化し、樹脂モールド前に光半
導体（１）＋２１の個別の特性を検査し選別しておいて
も、第２図に実線（イ）で示す如く、特性のばらつきが
大きい、尚、第２図は生産ロフトにおいて、伝達効率別
に数量を調べ、最も多い個数を１．０として正規化した
特性図である。(b) Prior art Generally, as shown in Fig. 1, an optical coupler consists of lead wires 13+131 that connect optical semiconductors for emitting and receiving light + IH2).
After placing it on the board and covering it with a light-transmitting resin (4), it is covered with a light-reflecting tree 11115+. However, the transmission efficiency of such an optical coupler increases (changes) depending on variations in the characteristics of the optical semiconductor (1) +21 and the curing state (shape, optical properties, etc.) of the resin +41151, and the optical coupler (1) is )+21, even if the individual characteristics are inspected and sorted, there is a large variation in the characteristics as shown by the solid line (A) in Figure 2.In addition, Figure 2 shows the results of examining the quantities by transmission efficiency in the production loft. , is a characteristic diagram normalized with the largest number being 1.0.
このような特性のばらつきを種々検討した結果、光反射
性樹脂（５）にその原因の多くがあるＣとが明らかとな
った。即ち光反射性樹脂（５）は主材となるｊ
樹脂に光反射剤を混練しているが、主材に二種類ハ
ある。まず主材としてエポキシ系樹脂を用いると、光反
射剤の樹脂内での分布は比較的均一であるが、硬化後に
素子にストレスが加わりやすい。そこで概ね主材として
シリコン系樹脂を用い、この場合には硬化後にも軟性を
残すので素子にストレスが加わらないが、硬化中にも光
反射剤が樹脂中を多動し、その結果同じ条件で硬化して
も光反射剤の濃度分布にかたよりが生じて伝達効率を変
化させていることがわかった。As a result of various studies on such variations in characteristics, it has become clear that the light-reflective resin (5) is largely responsible for this variation. That is, the light-reflecting resin (5) is made by kneading a light-reflecting agent into the main resin, and there are two types of main materials. First, when an epoxy resin is used as the main material, the distribution of the light reflecting agent within the resin is relatively uniform, but stress is likely to be applied to the element after curing. Therefore, silicone-based resin is generally used as the main material, and in this case, it remains soft even after curing, so no stress is applied to the element, but the light-reflecting agent moves rapidly in the resin even during curing, and as a result, even under the same conditions It was found that even after curing, the concentration distribution of the light-reflecting agent was uneven, changing the transmission efficiency.
ｌ／→ 発明の目的
本発明は上述の点を考慮してなされたもので、光伝達効
率を所望の範囲に集中して生産できる光結合器を提供す
るものである。l/→ Purpose of the Invention The present invention has been made in consideration of the above-mentioned points, and provides an optical coupler that can concentrate and produce light transmission efficiency within a desired range.
に）発明の構成
本発明は上述した光反射性樹脂としてシリコン樹脂中に
酸化チタンを光半導体の伝達効率に関連させて混練し、
さらに好ましくは樹脂中の酸化チタン濃度を表面側より
透光性樹脂側を高くしたものを用いるものである。B) Structure of the Invention The present invention is characterized by kneading titanium oxide into silicone resin as the above-mentioned light-reflecting resin in relation to the transmission efficiency of optical semiconductors,
More preferably, the titanium oxide concentration in the resin is higher on the translucent resin side than on the surface side.
（羽 実施例
本発明において最も注目するのは第１図の構造における
光反射性樹脂（５）である。光反射性樹脂１５）として
シリコン系樹脂を主材として用いた場合。(Feather Example) What is most noteworthy in the present invention is the light-reflecting resin (5) in the structure shown in FIG. 1.A case in which silicon-based resin is used as the main material as the light-reflecting resin (15).
それを透光性樹脂（４）の上に滴下したあと、従来はそ
のまますぐに硬化させていたが１本発明においては所定
時間だけ未硬化状態で放置してから硬化させることによ
り界面の光反射率が安定になることが判明したことに基
づいてなされたものである。After dropping it onto the translucent resin (4), it was conventionally cured immediately, but in the present invention, it is left uncured for a predetermined period of time and then cured to reflect light at the interface. This was done based on the fact that the rate was found to be stable.
従ってまずこの点について詳述する。Therefore, this point will be explained in detail first.
第３図はシリコン系樹脂の中に酸化チタンを所定量混入
し透光性樹脂（４）上に滴下した時、硬化開始までの未
硬化中での放置時間と、硬化後の光伝達効率との特性図
である。この図で示す如（、塗布後丁ぐ硬化する場合と
、しばら（放置してから硬化する場合とは伝達効率はほ
ぼ安定しているが。Figure 3 shows the relationship between the standing time in the uncured state until the start of curing and the light transmission efficiency after curing when a predetermined amount of titanium oxide is mixed into silicone resin and dropped onto the transparent resin (4). FIG. As shown in this figure, the transmission efficiency is almost stable in cases where the coating hardens immediately after application and cases where it hardens after being left for a while.
塗布後少し放置してから硬化させると同ロフト内で伝達
効率がばらつくことがわかる。さらにロフト内で伝達効
率が安定する場合でも、しばらく放置してから硬化する
方が高い伝達効率で安定している。−の現象を解析した
ところ、光反射性樹脂の滴下による塗布作業は、酸化チ
タンをかきまぜる事になり、樹脂中に酸化チタンがほぼ
均一に分散する。また未硬化のまま充分長い間装置する
と界面に酸化チタンが堆積するという状態がわかった。It can be seen that if you leave it for a while after application and then allow it to harden, the transmission efficiency varies within the same loft. Furthermore, even if the transmission efficiency is stable within the loft, the transmission efficiency will be higher and more stable if it is left for a while to harden. - Analysis of the phenomenon revealed that applying the light-reflective resin by dropping it stirs the titanium oxide, and the titanium oxide is almost uniformly dispersed in the resin. It was also found that titanium oxide was deposited on the interface if the device was left uncured for a sufficiently long period of time.
一方、第４図はシリコン系樹脂中にルチル型酸化チタン
を混練した時の混線量と、硬化後の光伝達効率の特性図
であるが、５車量パ一セント未満では極端に光伝達効率
が悪く、また３０重量パーセント以りでは混線増量に対
し光伝達効率が増加しない。これは低混線量では樹脂に
遮光性が得られず、また高湿線盪では光反射率がほぼ酸
化チタンの光反射率に等しくなるからと判断された。On the other hand, Figure 4 is a characteristic diagram of the amount of crosstalk when rutile titanium oxide is kneaded into silicone resin and the light transmission efficiency after curing. Moreover, if the amount exceeds 30 weight percent, the optical transmission efficiency does not increase with respect to the increase in crosstalk. It was determined that this is because the resin does not have a light-shielding property when the amount of crosstalk is low, and the light reflectance becomes approximately equal to that of titanium oxide when the crosstalk is high.
以上の成果に基づき、例えば第２図の横軸に示す２種類
の伝達効率Ａ、Ｂがめられた時には次のように対処する
。まず透光性樹脂被着前又は被着１１後の受光素子の特
性に応じて酸化チタンの混線量を５〜３０重、１社パー
セントの間で選択（例えば伝達効率Ａに対しては受光量
の大きさに応じ２０〜５重敬パーセント、同様に伝達効
率Ｂに対しては受光量の大きさに応じ２５〜１５重置バ
ーセントを選択）する。そしてその光反射性樹脂滴下後
當温下で２．５〜３時間、より好ましくは樹脂粘度が上
る中高温で１０〜５０分放置し、酸化チタンの沈降後に
硬化させる。このようにすることで第２図の点線（ロ）
（ハ）で示す如（特性ばらつきの少ないロフトを生産で
きた。Based on the above results, for example, when two types of transmission efficiency A and B shown on the horizontal axis in FIG. 2 are found, the following steps are taken. First, select the amount of crosstalk of titanium oxide between 5 and 30 times and 1 percent according to the characteristics of the light-receiving element before coating the translucent resin or after coating 11 (for example, for transmission efficiency A, the amount of light received 20 to 5 weight percentage is selected depending on the magnitude of the transmission efficiency B, and similarly, 25 to 15 weight percentage is selected depending on the size of the amount of light received for the transmission efficiency B. After dropping the light-reflective resin, the resin is allowed to stand for 2.5 to 3 hours at a normal temperature, more preferably for 10 to 50 minutes at a medium-high temperature where the viscosity of the resin increases, and the titanium oxide is cured after precipitation. By doing this, the dotted line (b) in Figure 2
As shown in (c), we were able to produce a loft with less variation in characteristics.
（へ）発明の効果
以上の如（本発明は、近接するリード線に載て、前記光
反射性樹脂は、シリコン樹脂中に酸化チタンを前記光半
導体の伝達効率に関連した５乃至３０重量パーセント混
練し、表面側より透光性樹脂側の濃度を高くしたもので
あるから、特性をあわせた生産が行なえる。(f) Effects of the Invention As described above (the present invention provides that the light-reflecting resin is placed on adjacent lead wires, the light-reflecting resin contains titanium oxide in a silicone resin at a concentration of 5 to 30 weight percent, which is related to the transmission efficiency of the optical semiconductor. Since it is kneaded and the concentration on the translucent resin side is higher than on the surface side, production with matching properties can be performed.
第１図は光結合器の断面図、第２図は生産した光結合器
の特性ばらつきを示す特性図、第３図と第４図は本発明
実施に伴う光結合器の特性図である。
１１１（２）・・・光半導体、＋３１１３１・・・リー
ド線、＋４１・・・透光性樹脂、（５）・・・光反射性
樹脂。FIG. 1 is a cross-sectional view of the optical coupler, FIG. 2 is a characteristic diagram showing variations in characteristics of the produced optical coupler, and FIGS. 3 and 4 are characteristic diagrams of the optical coupler according to the implementation of the present invention. 111(2)...Optical semiconductor, +31131...Lead wire, +41...Transparent resin, (5)...Light reflective resin.
Claims (1)
の光半導体と、該光半導体を覆う透光性樹脂と、該透光
性樹脂を覆う光反射性樹脂を具備した光結合器において
、 前記光反射性樹脂は、シリコン樹脂中に酸化チタンを前
記光半導体の伝達効率に関連した５乃至３０重量パーセ
ント混練し、表面側より透光性樹脂側の濃度を高（しで
ある事を特徴とする光結合器。(1) In an optical coupler comprising a light-emitting and light-receiving optical semiconductor placed on adjacent lead wires, a light-transmitting resin covering the optical semiconductor, and a light-reflecting resin covering the light-transmitting resin, The light-reflecting resin is characterized by kneading 5 to 30 weight percent of titanium oxide in silicone resin, which is related to the transmission efficiency of the optical semiconductor, and making the concentration higher on the light-transmitting resin side than on the surface side. optical coupler.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58201272A JPS6092677A (en) | 1983-10-26 | 1983-10-26 | Optical coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58201272A JPS6092677A (en) | 1983-10-26 | 1983-10-26 | Optical coupler |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6092677A true JPS6092677A (en) | 1985-05-24 |
| JPH0469439B2 JPH0469439B2 (en) | 1992-11-06 |
Family
ID=16438203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58201272A Granted JPS6092677A (en) | 1983-10-26 | 1983-10-26 | Optical coupler |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6092677A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03128956U (en) * | 1990-04-10 | 1991-12-25 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55166971A (en) * | 1979-06-14 | 1980-12-26 | Nec Corp | Photocoupling device |
| JPS56121958A (en) * | 1980-03-03 | 1981-09-25 | Kiyomitsu Ono | Collecting method of solar ray |
-
1983
- 1983-10-26 JP JP58201272A patent/JPS6092677A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55166971A (en) * | 1979-06-14 | 1980-12-26 | Nec Corp | Photocoupling device |
| JPS56121958A (en) * | 1980-03-03 | 1981-09-25 | Kiyomitsu Ono | Collecting method of solar ray |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03128956U (en) * | 1990-04-10 | 1991-12-25 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0469439B2 (en) | 1992-11-06 |
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