JPH0463537B2 - - Google Patents

Info

Publication number
JPH0463537B2
JPH0463537B2 JP58151407A JP15140783A JPH0463537B2 JP H0463537 B2 JPH0463537 B2 JP H0463537B2 JP 58151407 A JP58151407 A JP 58151407A JP 15140783 A JP15140783 A JP 15140783A JP H0463537 B2 JPH0463537 B2 JP H0463537B2
Authority
JP
Japan
Prior art keywords
electric field
substrate
reaction
electrodes
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58151407A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6043820A (ja
Inventor
Shunpei Yamazaki
Mamoru Tashiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP58151407A priority Critical patent/JPS6043820A/ja
Publication of JPS6043820A publication Critical patent/JPS6043820A/ja
Publication of JPH0463537B2 publication Critical patent/JPH0463537B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3408—
    • H10P14/24—
    • H10P14/3411—
    • H10P14/3421—

Landscapes

  • Photovoltaic Devices (AREA)
JP58151407A 1983-08-19 1983-08-19 プラズマ気相反応方法およびその製造装置 Granted JPS6043820A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58151407A JPS6043820A (ja) 1983-08-19 1983-08-19 プラズマ気相反応方法およびその製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58151407A JPS6043820A (ja) 1983-08-19 1983-08-19 プラズマ気相反応方法およびその製造装置

Publications (2)

Publication Number Publication Date
JPS6043820A JPS6043820A (ja) 1985-03-08
JPH0463537B2 true JPH0463537B2 (en:Method) 1992-10-12

Family

ID=15517916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58151407A Granted JPS6043820A (ja) 1983-08-19 1983-08-19 プラズマ気相反応方法およびその製造装置

Country Status (1)

Country Link
JP (1) JPS6043820A (en:Method)

Also Published As

Publication number Publication date
JPS6043820A (ja) 1985-03-08

Similar Documents

Publication Publication Date Title
US4398343A (en) Method of making semi-amorphous semiconductor device
KR910003170B1 (ko) 반도체 장치 제조 방법
US6204197B1 (en) Semiconductor device, manufacturing method, and system
US6946404B2 (en) Method for passivating a semiconductor substrate
US20080023070A1 (en) Methods and systems for manufacturing polycrystalline silicon and silicon-germanium solar cells
JPS6043819A (ja) 気相反応方法
US4988642A (en) Semiconductor device, manufacturing method, and system
US7981778B2 (en) Directional solid phase crystallization of thin amorphous silicon for solar cell applications
JPH0463537B2 (en:Method)
JPH0244141B2 (en:Method)
JP2923748B2 (ja) 被膜作製方法
JPH0324053B2 (en:Method)
JPH0586645B2 (en:Method)
JPH0436448B2 (en:Method)
JPH04381B2 (en:Method)
JPH0458173B2 (en:Method)
JP2639616B2 (ja) 半導体被膜形成方法
JPH0522376B2 (en:Method)
JP3062470B2 (ja) 被膜作製方法
JPH0436449B2 (en:Method)
JP2639637B2 (ja) 気相反応被膜作製方法
JPS6067673A (ja) プラズマ気相反応方法
JPH0424432B2 (en:Method)
JPH0522375B2 (en:Method)
JPH061765B2 (ja) 気相反応被膜作製方法