JPH0462181B2 - - Google Patents

Info

Publication number
JPH0462181B2
JPH0462181B2 JP58030929A JP3092983A JPH0462181B2 JP H0462181 B2 JPH0462181 B2 JP H0462181B2 JP 58030929 A JP58030929 A JP 58030929A JP 3092983 A JP3092983 A JP 3092983A JP H0462181 B2 JPH0462181 B2 JP H0462181B2
Authority
JP
Japan
Prior art keywords
region
gate region
semiconductor
gate
channel region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58030929A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59158552A (ja
Inventor
Junichi Nishizawa
Naoshige Tamamushi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP58030929A priority Critical patent/JPS59158552A/ja
Publication of JPS59158552A publication Critical patent/JPS59158552A/ja
Publication of JPH0462181B2 publication Critical patent/JPH0462181B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Light Receiving Elements (AREA)
JP58030929A 1983-02-28 1983-02-28 半導体光検出装置 Granted JPS59158552A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58030929A JPS59158552A (ja) 1983-02-28 1983-02-28 半導体光検出装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58030929A JPS59158552A (ja) 1983-02-28 1983-02-28 半導体光検出装置

Publications (2)

Publication Number Publication Date
JPS59158552A JPS59158552A (ja) 1984-09-08
JPH0462181B2 true JPH0462181B2 (enrdf_load_stackoverflow) 1992-10-05

Family

ID=12317368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58030929A Granted JPS59158552A (ja) 1983-02-28 1983-02-28 半導体光検出装置

Country Status (1)

Country Link
JP (1) JPS59158552A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2560038B2 (ja) * 1987-08-03 1996-12-04 日本合成ゴム株式会社 半導体素子の製造方法

Also Published As

Publication number Publication date
JPS59158552A (ja) 1984-09-08

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