JPH0462162B2 - - Google Patents
Info
- Publication number
- JPH0462162B2 JPH0462162B2 JP57075269A JP7526982A JPH0462162B2 JP H0462162 B2 JPH0462162 B2 JP H0462162B2 JP 57075269 A JP57075269 A JP 57075269A JP 7526982 A JP7526982 A JP 7526982A JP H0462162 B2 JPH0462162 B2 JP H0462162B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- film
- layer
- laminated
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 11
- 229910017082 Fe-Si Inorganic materials 0.000 claims description 6
- 229910017133 Fe—Si Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 4
- 229910003271 Ni-Fe Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 229910021364 Al-Si alloy Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 229910001004 magnetic alloy Inorganic materials 0.000 claims description 2
- 238000010301 surface-oxidation reaction Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 85
- 239000010410 layer Substances 0.000 description 62
- 230000035699 permeability Effects 0.000 description 18
- 239000000758 substrate Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 230000007423 decrease Effects 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000696 magnetic material Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000011162 core material Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 229910000702 sendust Inorganic materials 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910002796 Si–Al Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Description
本発明は磁気記録再生用の磁気ヘツドのコア材
に用いて特に良好な結果の得られる磁性体膜に係
り、さらに特に高周波領域でも高い透磁率を有
し、且つ低保磁力の積層磁性体膜に関する。
従来、磁気ヘツドのコア材に金属磁性材料を用
いる場合は高周波領域における渦電流損をおさえ
るために磁性体膜を電気的に絶縁して積層した構
造がとられている。またその製造方法としてはス
パツタリング、蒸着、イオンプレーテイングある
いはメツキ等の簿膜形成技術によつて一定膜厚の
磁性体層と絶縁層とを交互に順次形成し、積層体
を得る方法が公知である。
すなわち、第１図に積層磁性体膜の断面図を示
すごとく、基板１の上に数ミクロンの磁性体層２
と電気的に絶縁されるSiO2あるいはAl2O3等の非
磁性体層３を交互に積層して渦電流損を低減させ
た積層磁性体膜を磁気ヘツド材料として用いてい
る。この様な積層構造については、例えば特開昭
52−112797に記載がある。しかし、Ni−Fe合金
（パーマロイ）、Fe−Al−Si合金（センダスト）、
Fe−Si合金等で代表される結晶質磁性合金を薄
膜形成技術によつて形成した場合、堆積された磁
性膜の金属組織は基板にほぼ垂直な柱状構造を有
する。この柱状晶は膜厚が薄い状態においては針
状の細い結晶の集りになつているが膜厚が厚くな
るにしたがつて結晶が成長して太くなる。例え
ば、第２図に第１図の磁性体層の一層の断面斜視
図を示すごとく、基板１の上の磁性体層２は柱状
構造（あるいは針状）４を形成する。この柱状構
造４は基板付近で針状の細い結晶の集りである
が、膜厚が厚くなるにつれ逆円錐状に太く成長
し、膜厚が数ミクロンになると0.1〜0.3μｍとな
る。このような構造の磁性体膜は磁壁移動の障
害、磁気異方性のゆらぎ等が大きくなり、これを
非磁性体層を介して多層構造にしても十分な磁気
特性が得られない。また、柱状晶の部分に選択的
に合金が堆積し、表面に凹凸が生じ平坦な面が得
られない等の欠点を生ずる。
本発明の目的は磁気ヘツド用コア材として、低
い保磁力、相対的に高い透磁率、高い飽和磁束密
度を有する積層磁性体膜を提供することにある。
本発明は磁性体層と非磁性体層とを堆積してな
る積層磁性体膜において、厚さが２種以上からな
る非磁性体層を有し、そのうち少なくとも１種が
電気的絶縁層からなる積層磁性体膜である。その
積層膜の一例は第３図に断面図として示す。基板
１の上に磁性体層２と第１の非磁性体層５を交互
に積層した単位積層膜６を形成し、この単位積層
膜と電気的に絶縁する第２の非磁性体層３とを交
互に積層して、膜の厚い積層磁性体膜を形成す
る。第１の非磁性体層５は第２の非磁性体層３よ
り薄くすることが好ましい。第４図は単位積層膜
６の拡大断面斜視図を示し、磁性体層２の構造は
微細な針状晶から形成されたものとなる。
各層の磁性体層の膜厚は0.05〜0.2μｍの範囲が
好適で、この範囲の膜厚なら0.1μｍφ以下の比較
的均一な針状晶が形成される。したがつて、この
膜厚の磁性体層に第１の非磁性層を形成するとよ
い。第１の非磁性層は結晶の粗大化を防ぐための
もので、電気的な絶縁は目的としないでもよい。
したがつて、必ずしも絶縁体でなくともよく、
Cu、Al、Mo等の導体膜でもよく特に限定するも
のではない。また、磁性体層自身の表面を薄く酸
化し、酸化膜を形成することもできる。第１の非
磁性層の膜厚は10〜100Åが好適で、10Å以下に
すると部分的に単層膜となり、また、100Å以上
にすると磁壁移動の障害となり保磁力の増大、透
磁率の低下をまねきいずれも好ましくない。この
ような積層膜は１〜5μｍの膜厚まで形成されて
単位積層膜となり、この単位積層膜と0.1〜1μｍ
の第２の非磁性体層とを積層してなるのが本発明
の積層磁性体膜である。このようにすれば、10μ
ｍ以上の積層体でも優れた磁性体膜を得ることが
できる。
以下本発明を実施例によつて詳しく説明する。
本発明の実施例では第３図、第４図に示す積層
膜の形成はスパツタリング法によつて行なわれ
る。磁性膜はパーマロイ（Ni−20％Fe）、センダ
スト（Fe−9.5％Si−６％Al）、Fe−6.5％Siまた
はFe−３％Si（それぞれ重量％）等の磁歪零付近
の組成が選ばれ、特に形成膜が柱状構造を示す材
料に好適である。さらに、単層膜では数エルステ
ツドの比較的大きな保磁力の値を示すFe−6.5％
Si膜に有効な結果を得る。Fe−6.5％Si膜は飽和
磁束密度が18000ガウス程度を示し、高保磁力記
録媒体に有効な記録特性を示す材料である。以
下、順を追つて説明する。
基板は非磁性のガラスあるいはセラミツク基板
が選ばれ、基板が高周波スパツタリング容器の陽
極板上に置かれる。そして、Fe−Si基板が陰極
上に置かれる。ターゲツトから基板に対して所望
の高周波電力が印加され、アルゴンガス雰囲気中
でスパツタリングされる。
比較的好条件でスパツタリングするために選ば
れた諸条件は下記の如くである。
ターゲツト組成 Fe−6.5％Si
高周波電力密度 2.8W／cm2
アルゴン圧力 ２×10-2Torr
基板温度 350℃
陽極−陰極間距離 25mm
膜 厚 1.5μｍ
この結果できた単層膜の磁気特性は、保磁力；
2.5Oe、5MHzにおける透磁率；400であつた。な
お、スパツタリング中には面内に一方方向の磁場
（約10エルステツド）が印加されており、またそ
れぞれの値は磁化困難軸方向の磁気特性を示す。
スパツタリングに際しての諸条件は、ターゲツ
ト組成をFe−6.5％Siを用いるとFe側に組成がず
れる傾向にあり、堆積された膜の組成は4.5〜５
％Siとなる。高周波電力密度は2W／cm2以上にし
た方が保磁力が低減する傾向にある。アルゴン圧
力は高い方向で保磁力が低減する。基板温度は歪
応力を緩和するため300℃以上が好ましい。陽極
−陰極間距離は短い方が保磁力が低くなる領域が
あり、スパツタリング中の放電安定性を加味する
と20〜30mmが好ましい。また、アルゴンガス導入
前の容器の真空度は酸化や不純物の混入が磁気特
性に影響するので10-7Torr以上の高真空にする
必要がある。以上の実験結果を踏え以下に多層膜
の実施例を示す。
実施例 １
第５図に第１の非磁性体層とFe−Si膜を交互
に堆積し、1.5μｍの積層膜を形成した時のFe−Si
膜の膜厚に対する保磁力（曲線２０）と5MHzで
の透磁率（曲線３０）の関係を示す。第１の非磁
性体層の膜厚は30オングストローム（スパツタ時
間30秒）とした。スパツタ条件は、電力密度
0.7W／cm2、アルゴン圧力５×10-3Torr、陽極−
陰極間隔30mm、基板温度250℃とした。保磁力は
磁性層を薄くする方向で低減する傾向にあり、
5MHzでの透磁率を1000以上維持するためには
0.05〜0.2μｍが好適で、0.1μｍ付近で最大を示し
た。保磁力の値は膜構造に強く影響をうけ、磁性
膜の柱状構造を細かくすることによつて低減す
る。磁性膜の柱状構造を走査型電子顕微鏡で観察
すると、0.5μｍ程度以上になると急激に成長する
ことが確認された。したがつて、柱状構造結晶が
あまり成長しない膜厚で、一旦成長を止める効果
を有する第１の非磁性体層（中間層）を設けると
保磁力が低減し、透磁率も高くすることが可能で
ある。このような第１の非磁性層に用いる材料は
SiO2、SiO、Al2O3等の絶縁材料、Cu、Al、Mo、
Ag等の導電材料また、Si、Ge等の半金属でも効
果があることがわかつた。
実施例 ２
第６図はFe−Si磁性層の膜厚を0.1μｍとした時
の第１の非磁性体層膜厚をかえた時の保磁力（曲
線４０）と5MHzにおける透磁率（曲線５０）の
変化を示す。この時の磁性体膜は15層とし全膜厚
を約1.5μｍとした。第１の非磁性体層の膜厚は薄
くするほど積層膜の磁気特性が向上する。特に第
１の非磁性体層が100オングストローム以下で保
磁力（曲線４０）は低減し、透磁率（曲線５０）
も向上し、10〜30オングストロームで保磁力が最
も低く、透磁率が最大となる。第１の非磁性体層
を10オングストローム以下にすると磁性膜は部分
的に多層構造が切れ、単層構造になつていること
が確認された。一方、第１の非磁性体層を100オ
ングストローム以上にすると単層膜より保磁力が
小さいものの保磁力の増大、透磁率の低下をきた
し、好ましい磁性体膜を得られなかつた。これは
第１の非磁性体層が厚くなると磁壁移動等の障害
になつているものと考えられる。したがつて、第
１の非磁性体層の膜厚は各層の磁性体層結晶成長
を止める効果がある範囲でできるだけ薄いことが
好ましい。また、熱処理工程を有するときにはあ
る程度の膜厚を必要とする場合がある。
他の実施例では第１の非磁性体層として各層の
磁性体層自身の表面を酸化することによつても同
じ効果を得ることができる。この場合、スパツタ
容器に空気を導入するか、酸素含有ガスを導入し
て表面に酸化膜を形成して行なわれる。また、イ
オンを打込んで表面に変質層を形成してもよい。
このように、第１の非磁性体層を有する積層膜
は数ミクロン膜厚において磁気特性の優れた磁性
体膜を得ることができ、この範囲の膜厚で用いら
れる薄膜磁気ヘツドには十分適用できる。一方、
VTR用ヘツド等で磁性体膜の膜厚をトラツク幅
として用いる構造の場合には、10〜20μｍの膜厚
を必要とするため、渦電流損による透磁率の低下
が問題となる。この場合には次のような膜構造が
とられる。
実施例 ３
磁性体層と第１の非磁性体層を堆積した適当の
膜厚を単位とする単位積層膜と電気的に絶縁体で
あるSiO2、Al2O3あるいは種々のセラミツク材料
等からなる第２の非磁性体層を積層することによ
つて得られる。単位積層膜の膜厚は１〜5μｍの
範囲で好ましい磁気性が得られる、1μｍ以下に
すると保磁力が増大し、5μｍ以上にすると高周
波（1MHz以上）領域の透磁率が急激に低下する。
一方、第２の非磁性体層の膜厚は第１の非磁性体
層より厚い膜厚が必要となり、好ましい範囲は
0.1〜1μｍである。0.1μｍ以下にすると電気的絶
縁効果が低下し、単位積層膜の有する保磁力およ
び透磁率の値を確保できなくなる。また、1μｍ
以上にすると単位積層膜に対して非磁性層の占る
割合が大きくなり、低周波数領域、高周波領域と
もに透磁率が低減する。以下、代表例を第１表に
示す。
The present invention relates to a magnetic film that can be used as a core material of a magnetic head for magnetic recording and reproducing, and which can obtain particularly good results, and more particularly to a laminated magnetic film that has high magnetic permeability even in a high frequency range and has a low coercive force. Regarding. Conventionally, when a metallic magnetic material is used for the core material of a magnetic head, a structure is adopted in which magnetic films are electrically insulated and laminated in order to suppress eddy current loss in a high frequency region. Also, as a manufacturing method, a method is known in which a laminate is obtained by alternately forming magnetic layers and insulating layers of a constant thickness using film forming techniques such as sputtering, vapor deposition, ion plating, or plating. be. That is, as shown in FIG. 1, which is a cross-sectional view of a laminated magnetic film, a magnetic layer 2 of several microns is placed on a substrate 1.
A laminated magnetic film in which eddy current loss is reduced by alternately laminating non-magnetic layers 3 such as SiO 2 or Al 2 O 3 which are electrically insulated from the magnetic head is used as the magnetic head material. Regarding such a laminated structure, for example,
It is described in 52-112797. However, Ni-Fe alloy (permalloy), Fe-Al-Si alloy (sendust),
When a crystalline magnetic alloy such as an Fe--Si alloy is formed by a thin film formation technique, the metal structure of the deposited magnetic film has a columnar structure substantially perpendicular to the substrate. These columnar crystals form a collection of needle-like thin crystals when the film thickness is thin, but as the film thickness increases, the crystals grow and become thicker. For example, as shown in FIG. 2, which is a cross-sectional perspective view of one layer of the magnetic layer shown in FIG. 1, the magnetic layer 2 on the substrate 1 forms a columnar structure (or needle-like structure) 4. This columnar structure 4 is a collection of needle-like thin crystals near the substrate, but as the film thickness increases, it grows thicker in an inverted conical shape, and when the film thickness becomes several microns, it becomes 0.1 to 0.3 μm. A magnetic film with such a structure suffers from large disturbances in domain wall motion, fluctuations in magnetic anisotropy, etc., and even if it is formed into a multilayer structure with non-magnetic layers interposed therebetween, sufficient magnetic properties cannot be obtained. Further, the alloy is selectively deposited on the columnar crystal portions, causing defects such as unevenness on the surface and the inability to obtain a flat surface. An object of the present invention is to provide a laminated magnetic film having low coercive force, relatively high magnetic permeability, and high saturation magnetic flux density as a core material for a magnetic head. The present invention provides a laminated magnetic film formed by depositing a magnetic layer and a non-magnetic layer, which has a non-magnetic layer having two or more types of thickness, at least one of which is an electrically insulating layer. It is a laminated magnetic film. An example of the laminated film is shown as a cross-sectional view in FIG. A unit laminated film 6 in which magnetic layers 2 and first non-magnetic layers 5 are alternately laminated is formed on the substrate 1, and a second non-magnetic layer 3 is electrically insulated from this unit laminated film. are alternately laminated to form a thick laminated magnetic film. The first nonmagnetic layer 5 is preferably thinner than the second nonmagnetic layer 3. FIG. 4 shows an enlarged cross-sectional perspective view of the unit laminated film 6, and the structure of the magnetic layer 2 is formed from fine needle-like crystals. The thickness of each magnetic layer is preferably in the range of 0.05 to 0.2 .mu.m, and if the thickness is within this range, relatively uniform acicular crystals with a diameter of 0.1 .mu.m or less are formed. Therefore, it is preferable to form the first nonmagnetic layer on the magnetic layer having this thickness. The first nonmagnetic layer is for preventing crystal coarsening, and may not be intended for electrical insulation.
Therefore, it does not necessarily have to be an insulator,
It may also be a conductive film of Cu, Al, Mo, etc., and is not particularly limited. Alternatively, the surface of the magnetic layer itself can be thinly oxidized to form an oxide film. The preferred thickness of the first nonmagnetic layer is 10 to 100 Å. If it is less than 10 Å, it will become a partially monolayer film, and if it is more than 100 Å, it will become an obstacle to domain wall movement, increasing the coercive force and decreasing the magnetic permeability. I don't like either of them. Such a laminated film is formed to a film thickness of 1 to 5 μm to form a unit laminated film, and this unit laminated film has a thickness of 0.1 to 1 μm.
The laminated magnetic film of the present invention is formed by laminating the second non-magnetic layer. In this way, 10μ
An excellent magnetic film can be obtained even with a laminate having a thickness of m or more. The present invention will be explained in detail below with reference to Examples. In the embodiment of the present invention, the laminated film shown in FIGS. 3 and 4 is formed by a sputtering method. The magnetic film has a composition near zero magnetostriction, such as permalloy (Ni-20%Fe), Sendust (Fe-9.5%Si-6%Al), Fe-6.5%Si, or Fe-3%Si (each in weight%). This method is particularly suitable for materials whose formed film has a columnar structure. Furthermore, in a single layer film, Fe−6.5% exhibits a relatively large coercive force value of several oersteds.
Obtain valid results for Si films. The Fe-6.5%Si film exhibits a saturation magnetic flux density of approximately 18,000 Gauss, and is a material that exhibits recording characteristics effective for high coercive force recording media. The following is a step-by-step explanation. A non-magnetic glass or ceramic substrate is selected as the substrate, and the substrate is placed on the anode plate of the high frequency sputtering vessel. Then, a Fe-Si substrate is placed on the cathode. A desired high frequency power is applied to the substrate from the target, and sputtering is performed in an argon gas atmosphere. The conditions selected for sputtering under relatively favorable conditions are as follows. Target composition Fe-6.5%Si Radio frequency power density 2.8W/cm 2 Argon pressure 2×10 -2 Torr Substrate temperature 350℃ Anode-cathode distance 25mm Film thickness 1.5μm The magnetic properties of the resulting single-layer film are magnetic force;
Magnetic permeability at 2.5Oe and 5MHz was 400. Note that during sputtering, a unidirectional magnetic field (approximately 10 oersted) is applied in the plane, and each value indicates the magnetic properties in the direction of the hard magnetization axis. The conditions for sputtering are that when Fe-6.5%Si is used as the target composition, the composition tends to shift toward the Fe side, and the composition of the deposited film is 4.5 to 5%.
%Si. The coercive force tends to decrease when the high-frequency power density is set to 2 W/cm 2 or higher. The coercive force decreases as the argon pressure increases. The substrate temperature is preferably 300° C. or higher to alleviate strain stress. There is a region in which the shorter the anode-cathode distance, the lower the coercive force, and when considering the discharge stability during sputtering, it is preferably 20 to 30 mm. Furthermore, the degree of vacuum in the container before introducing argon gas needs to be a high vacuum of 10 -7 Torr or higher, since oxidation and impurity contamination affect the magnetic properties. Based on the above experimental results, examples of multilayer films are shown below. Example 1 Figure 5 shows the Fe-Si layer when the first non-magnetic layer and the Fe-Si film are alternately deposited to form a 1.5 μm laminated film.
The relationship between coercive force (curve 20) and magnetic permeability at 5 MHz (curve 30) with respect to film thickness is shown. The thickness of the first nonmagnetic layer was 30 angstroms (sputtering time 30 seconds). The sputter condition is the power density
0.7W/cm 2 , argon pressure 5×10 -3 Torr, anode -
The cathode spacing was 30 mm, and the substrate temperature was 250°C. Coercive force tends to decrease as the magnetic layer becomes thinner.
To maintain magnetic permeability of 1000 or more at 5MHz
The preferred value was 0.05 to 0.2 μm, and the maximum value was observed around 0.1 μm. The value of coercive force is strongly influenced by the film structure, and can be reduced by making the columnar structure of the magnetic film finer. When the columnar structure of the magnetic film was observed using a scanning electron microscope, it was confirmed that the magnetic film grows rapidly when it becomes about 0.5 μm or more. Therefore, by providing a first non-magnetic layer (intermediate layer) that has the effect of temporarily stopping the growth of columnar structure crystals with a film thickness that does not allow much growth, the coercive force can be reduced and the magnetic permeability can be increased. It is. The material used for such a first nonmagnetic layer is
Insulating materials such as SiO 2 , SiO, Al 2 O 3 , Cu, Al, Mo,
It was found that conductive materials such as Ag and semimetals such as Si and Ge are also effective. Example 2 Figure 6 shows the coercive force (curve 40) and magnetic permeability (curve 50) at 5MHz when the thickness of the first non-magnetic layer is changed when the thickness of the Fe-Si magnetic layer is 0.1 μm. ). At this time, the magnetic film had 15 layers, and the total film thickness was about 1.5 μm. The thinner the first nonmagnetic layer is, the better the magnetic properties of the laminated film are. In particular, when the first non-magnetic layer is less than 100 angstroms, the coercive force (curve 40) decreases, and the magnetic permeability (curve 50) decreases.
The coercivity is lowest and the permeability is highest between 10 and 30 angstroms. It was confirmed that when the thickness of the first non-magnetic layer was reduced to 10 angstroms or less, the multilayer structure of the magnetic film was partially broken and a single layer structure was formed. On the other hand, when the first nonmagnetic layer has a thickness of 100 angstroms or more, although the coercive force is smaller than that of a single layer film, the coercive force increases and the magnetic permeability decreases, making it impossible to obtain a desirable magnetic film. This is considered to be because when the first non-magnetic layer becomes thicker, it becomes an obstacle to domain wall movement and the like. Therefore, it is preferable that the thickness of the first nonmagnetic layer is as thin as possible within a range that is effective in stopping the crystal growth of the magnetic layer of each layer. Furthermore, when a heat treatment process is involved, a certain degree of film thickness may be required. In other embodiments, the same effect can be obtained by oxidizing the surface of each magnetic layer itself as the first nonmagnetic layer. In this case, air is introduced into the sputtering container or an oxygen-containing gas is introduced to form an oxide film on the surface. Alternatively, an altered layer may be formed on the surface by implanting ions. In this way, the laminated film having the first non-magnetic layer can obtain a magnetic film with excellent magnetic properties even at a film thickness of several microns, and is fully applicable to thin-film magnetic heads used with film thickness in this range. can. on the other hand,
In the case of a structure in which the thickness of the magnetic film is used as the track width in a VTR head or the like, a film thickness of 10 to 20 .mu.m is required, resulting in a decrease in magnetic permeability due to eddy current loss. In this case, the following membrane structure is adopted. Example 3 A unit laminated film of an appropriate film thickness in which a magnetic layer and a first non-magnetic layer are deposited, and electrically insulating materials such as SiO 2 , Al 2 O 3 or various ceramic materials, etc. This can be obtained by laminating second non-magnetic layers. Preferable magnetic properties can be obtained when the thickness of the unit laminated film is in the range of 1 to 5 μm; when it is less than 1 μm, the coercive force increases, and when it is more than 5 μm, the magnetic permeability in the high frequency (1 MHz or more) region decreases rapidly.
On the other hand, the thickness of the second non-magnetic layer needs to be thicker than the first non-magnetic layer, and the preferable range is
It is 0.1 to 1 μm. When the thickness is less than 0.1 μm, the electrical insulation effect decreases, making it impossible to secure the coercive force and magnetic permeability values of the unit laminated film. Also, 1μm
If the ratio is above, the ratio of the nonmagnetic layer to the unit laminated film increases, and the magnetic permeability decreases in both the low frequency region and the high frequency region. Representative examples are shown in Table 1 below.
【表】
例１、２、３、４、５はFe−Si磁性体の積層
膜の構成およびその磁気特性を示す。それぞれの
構成において、単位積層膜の持つ磁気特性を損ね
ずに高講話磁束密度、低保磁力を有し、高周波領
域においても高透磁率を有する厚膜の積層磁性体
膜を得ることができる。また、例６、７に示すご
とく、Fe−Si−Al、Ni−Fe系でも優れた積層磁
性体膜を得ることができる。
以上に述べたごとく本発明は特に薄膜形成技術
によつて得られる磁性体膜の柱状構造を有するも
のに効果が得られる。
本発明は磁性体層と非磁性体層とを堆積してな
る積層磁性体膜において、厚さが異なる非磁性体
層を適当に組み合せることによつて優れた磁気特
性を有する磁性膜を得ることにある。例えば、数
ミクロンの磁性膜ならば、数十オングストローム
の非磁性体膜を適当に間に介することによつて磁
気特性がかなり改善され、さらに適当な間隔で数
百オングストロームの絶縁性の非磁性体膜を間に
介することによつても効果が現われる。また、５
ミクロン程度以上の磁性体膜に電気的絶縁性の高
い膜厚の非磁性体膜が適当な間隔で挿入されるこ
とによつて、厚膜磁性体においても優れた磁気特
性を保つことができる。[Table] Examples 1, 2, 3, 4, and 5 show the structure of a laminated film of Fe-Si magnetic material and its magnetic properties. In each configuration, it is possible to obtain a thick laminated magnetic film having high magnetic flux density, low coercive force, and high magnetic permeability even in a high frequency region without impairing the magnetic properties of the unit laminated film. Further, as shown in Examples 6 and 7, excellent laminated magnetic films can be obtained using Fe-Si-Al and Ni-Fe systems. As described above, the present invention is particularly effective for magnetic films having a columnar structure obtained by thin film forming techniques. The present invention obtains a magnetic film having excellent magnetic properties by appropriately combining non-magnetic layers with different thicknesses in a laminated magnetic film formed by depositing a magnetic layer and a non-magnetic layer. There is a particular thing. For example, in the case of a magnetic film of several microns, the magnetic properties can be considerably improved by interposing a non-magnetic material film of several tens of angstroms in between, and furthermore, the magnetic properties can be significantly improved by interposing a non-magnetic film of several tens of angstroms in thickness, and furthermore, with an insulating non-magnetic film of several hundred angstroms at appropriate intervals. Effects can also be obtained by interposing a membrane. Also, 5
Excellent magnetic properties can be maintained even in thick-film magnetic materials by inserting electrically insulating, thick non-magnetic films at appropriate intervals into a magnetic film of micron size or more.
第１図は従来の積層磁性体膜の断面図、第２図
は磁性体層の一層の断面斜視図、第３図は本発明
の一実施例における積層磁性体膜の断面図、第４
図は単位積層膜の拡大断面斜視図、第５図は本発
明の一実施例における積層膜の磁性体層の厚さと
磁気特性の関係を示すグラフ、第６図は本発明の
一実施例における積層膜の第１の非磁性体層の厚
さと磁気特性の関係を示すグラフである。
２……磁性体層、３……第２の非磁性体層、５
……第１の非磁性体層、２０……保磁力を示す曲
線、３０……透磁率を示す曲線、４０……保磁力
を示す曲線、５０……透磁率を示す曲線。
FIG. 1 is a cross-sectional view of a conventional laminated magnetic film, FIG. 2 is a cross-sectional perspective view of one magnetic layer, FIG. 3 is a cross-sectional view of a laminated magnetic film in an embodiment of the present invention, and FIG.
The figure is an enlarged cross-sectional perspective view of a unit laminated film, FIG. 5 is a graph showing the relationship between the thickness of the magnetic layer and magnetic properties of a laminated film in an embodiment of the present invention, and FIG. 6 is a graph in an embodiment of the present invention. It is a graph showing the relationship between the thickness of the first nonmagnetic layer of the laminated film and the magnetic properties. 2...Magnetic layer, 3...Second non-magnetic layer, 5
...First non-magnetic layer, 20... Curve showing coercive force, 30... Curve showing magnetic permeability, 40... Curve showing coercive force, 50... Curve showing magnetic permeability.
Claims (1)
層とを堆積してなる積層磁性体膜において、 0.05〜0.2μｍの膜厚を有する磁性体層と10〜
100オングストロームの膜厚を有する第１の非磁
性体層とを交互に積層して単位積層膜を構成し、
当該単位積層膜と前記第１の非磁性体層よりも膜
厚の厚い電気絶縁層である第２の非磁性体層とを
交互に積層してなることを特徴とする積層磁性体
膜。 ２ 前記第２の非磁性体層の膜厚が0.1〜1μｍで
あり、前記単位積層膜の膜厚が１〜5μｍである
ことを特徴とする特許請求の範囲第１項記載の積
層磁性体膜。 ３ 前記第１の非磁性体層が導電材料であること
を特徴とする特許請求の範囲第１項または第２項
記載の積層磁性体膜。 ４ 前記第１の非磁性体層が半金属であることを
特徴とする特許請求の範囲第１項または第２項記
載の積層磁性体膜。 ５ 前記第１の非磁性体層が絶縁体であることを
特徴とする特許請求の範囲第１項または第２項記
載の積層磁性体膜。 ６ 前記第１の非磁性体層が磁性体層自身の表面
酸化層であることを特徴とする特許請求の範囲第
１項または第２項記載の積層磁性体膜。 ７ 前記磁性体層はNi−Fe合金であることを特
徴とする特許請求の範囲第１項乃至第６項のうち
いずれかに記載の積層磁性体膜。 ８ 前記磁性体層はFe−Al−Si合金であること
を特徴とする特許請求の範囲第１項乃至第６項の
うちいずれかに記載の積層磁性体膜。 ９ 前記磁性体層はFe−Si合金であることを特
徴とする特許請求の範囲第１項乃至第６項のうち
いずれかに記載の積層磁性体膜。 １０ 前記磁性体層は0.1μｍφ以下の針状の結晶
で構成されることを特徴とする特許請求の範囲第
１項乃至第９項のうちいずれかに記載の積層磁性
体膜。[Scope of Claims] 1. A laminated magnetic film formed by depositing a magnetic layer made of a crystalline magnetic alloy and a non-magnetic layer, a magnetic layer having a thickness of 0.05 to 0.2 μm and 10 to 10 μm.
A unit laminated film is formed by alternately laminating a first non-magnetic layer having a film thickness of 100 angstroms,
A laminated magnetic film characterized in that the unit laminated film and a second nonmagnetic layer, which is an electrically insulating layer thicker than the first nonmagnetic layer, are alternately laminated. 2. The laminated magnetic film according to claim 1, wherein the second non-magnetic layer has a thickness of 0.1 to 1 μm, and the unit laminated film has a thickness of 1 to 5 μm. . 3. The laminated magnetic film according to claim 1 or 2, wherein the first nonmagnetic layer is a conductive material. 4. The laminated magnetic film according to claim 1 or 2, wherein the first nonmagnetic layer is made of a semimetal. 5. The laminated magnetic film according to claim 1 or 2, wherein the first nonmagnetic layer is an insulator. 6. The laminated magnetic film according to claim 1 or 2, wherein the first non-magnetic layer is a surface oxidation layer of the magnetic layer itself. 7. The laminated magnetic film according to any one of claims 1 to 6, wherein the magnetic layer is made of a Ni-Fe alloy. 8. The laminated magnetic film according to any one of claims 1 to 6, wherein the magnetic layer is made of an Fe-Al-Si alloy. 9. The laminated magnetic film according to any one of claims 1 to 6, wherein the magnetic layer is an Fe-Si alloy. 10. The laminated magnetic film according to any one of claims 1 to 9, wherein the magnetic layer is composed of needle-like crystals with a diameter of 0.1 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7526982A JPS58192311A (en) | 1982-05-07 | 1982-05-07 | Laminated magnetic film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7526982A JPS58192311A (en) | 1982-05-07 | 1982-05-07 | Laminated magnetic film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58192311A JPS58192311A (en) | 1983-11-09 |
| JPH0462162B2 true JPH0462162B2 (en) | 1992-10-05 |
Family
ID=13571331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7526982A Granted JPS58192311A (en) | 1982-05-07 | 1982-05-07 | Laminated magnetic film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58192311A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0785451B2 (en) * | 1984-10-17 | 1995-09-13 | 株式会社日立製作所 | High permeability multilayer magnetic film |
| JP2650890B2 (en) * | 1985-02-15 | 1997-09-10 | 株式会社日立製作所 | Multilayer magnetic film |
| US5142426A (en) * | 1990-06-21 | 1992-08-25 | International Business Machines Corporation | Thin film magnetic head having interspersed resistance layers to provide a desired cut-off frequency |
| JPH0676238A (en) * | 1992-07-08 | 1994-03-18 | Fuji Electric Co Ltd | Thin-film magnetic head |
| US6628478B2 (en) | 2001-04-17 | 2003-09-30 | Hitachi Global Storage Technologies Netherlands B.V. | Write head with all metallic laminated pole pieces with thickness differential |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51138899A (en) * | 1975-05-26 | 1976-11-30 | Hitachi Ltd | Layered high permiability magnetic material |
-
1982
- 1982-05-07 JP JP7526982A patent/JPS58192311A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51138899A (en) * | 1975-05-26 | 1976-11-30 | Hitachi Ltd | Layered high permiability magnetic material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58192311A (en) | 1983-11-09 |
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